CN102054894A - Method for controlling etching process of photovoltaic device - Google Patents
Method for controlling etching process of photovoltaic device Download PDFInfo
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- CN102054894A CN102054894A CN2009102108151A CN200910210815A CN102054894A CN 102054894 A CN102054894 A CN 102054894A CN 2009102108151 A CN2009102108151 A CN 2009102108151A CN 200910210815 A CN200910210815 A CN 200910210815A CN 102054894 A CN102054894 A CN 102054894A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method for controlling an etching process of a photovoltaic device. The method comprises the following steps of: 1, feeding a wafer into an etching machine; 2, measuring, computing and recording the difference of a certain specific physical quantity of the wafer before and after the etching process in the etching machine, and computing and recording an etching rate of the wafer accordingly; 3, automatically judging whether the etching rate is different from a preset value set in the etching machine by using the etching machine, returning to the step 1 if the etching rate is not different from the preset value, and performing a step 4 if the etching rate is different from the preset value; 4, computing a correction value of an etching process parameter by using the etching machine; and 5, automatically correcting the etching process parameter by using the etching machine, and returning to the step 1. In the etching process of the photovoltaic device, the etching rate of the wafer is adjusted by an automatic process feedback control method, so that the stable etching process parameter is achieved.
Description
Technical field
The present invention is the etch process control method of relevant a kind of photovoltaic devices, refers in particular to a kind of photovoltaic devices etch process control method that utilization automatic process feedback control method is monitored the rate of etch of silicon wafer, to reach stable etch process parameters.
Background technology
Present etch process in the fabrication schedule of photovoltaic devices, be before a silicon wafer (silicon wafer) is sent into etching machine, weight measures before earlier doing the etch process of this silicon wafer with manual type, after finishing etch process, described silicon wafer is shifted out board, weight measures after doing the etch process of this silicon wafer with manual type again, and with manual type calculate before the etch process with etch process after weight differential, and draw the rate of etch (etching rate) of described etching machine, compare with the rate of etch of being scheduled to then, to determine whether to adjust the parameter of etch process, for example board technological temperature, etchant concentration, transfer rate of silicon wafer conveyer or the like.
Because above-mentioned program is to carry out with manual type, can't carry out above-mentioned program to each wafer, can only use the picked at random mode, yet, the mode of picked at random can't " at any time " monitoring, record and adjust the etch process parameters of silicon wafer.
Summary of the invention
The present invention for improve above-mentioned prior art can't " at any time " the monitoring shortcoming, in the hope of monitoring, write down and adjust the etch process parameters of silicon wafer at any time, provide a kind of etch process control method of photovoltaic devices at this, it is the rate of etch that utilization automatic process feedback control method is monitored silicon wafer.
In order to achieve the above object, the invention provides a kind of etch process control method of photovoltaic devices, it is to include the following step:
Step 1 a: wafer is sent into an etching machine;
Step 2: in described etching machine, measure, calculate, the described wafer of record before etch process with etch process after the difference of a certain specific physical quantity, and calculate, write down its rate of etch thus;
Step 3: judge automatically by described etching machine whether the predetermined value of establishing in described rate of etch and the described etching machine is variant,, if yes, then down carry out step 4 if not, then come back to step 1;
Step 4: calculate the etch process parameters correction value by described etching machine;
Step 5: revise its etch process parameters automatically by described etching machine, and get back to step 1.
The automatic process feedback control method of the present invention's utilization, its be by etching machine itself automatically in board, measure before the etch process with etch process after the some specific physical quantity of silicon wafer, for example weight or size, and calculate before the etch process automatically and the described physical quantity difference behind the etch process, and draw the rate of etch (etching rate) of described etching machine, described then etching machine can compare with predetermined rate of etch, to judge whether to adjust the parameter of etch process automatically, board technological temperature for example, etchant concentration, transfer rate of silicon wafer conveyer or the like.So go round and begin again, the silicon wafer that each sheet is sent in the etching machine is done said procedure, and the record of feedback rate of etch reaches and can monitor the rate of etch of silicon wafer and sane etch process at any time to adjust etch process parameters automatically, to promote the yield of etch process.
The present invention will be at following etch process controlling party ratio juris and the execution mode that described photovoltaic devices is described with an embodiment.
Description of drawings
Fig. 1 is the schematic flow sheet of photovoltaic devices etch process control method of the present invention.
Description of reference numerals: 1～5-step.
Embodiment
For making your juror further cognitive and understanding be arranged to feature of the present invention, purpose and function, hereinafter special theory reason with relevant thin bilge construction of the present invention and design describes, so that the juror can understand characteristics of the present invention, detailed description is presented below:
The invention provides a kind of etch process control method of photovoltaic devices, it is in the etching program of photovoltaic devices, and utilization automatic process feedback control method is adjusted the rate of etch of wafer, to reach stable etch process parameters.
See also shown in Figure 1ly, this figure is the schematic flow sheet of an embodiment of photovoltaic devices etch process control method of the present invention.As shown in Figure 1, the etch process control method of present embodiment photovoltaic devices is to include the following step:
Step 1 a: wafer is sent into an etching machine;
Step 2: in described etching machine, measure, calculate, the described wafer of record before etch process with etch process after the difference of a certain specific physical quantity, and calculate, write down its rate of etch thus;
Step 3: judge automatically by described etching machine whether the predetermined value of establishing in described rate of etch and the described etching machine is variant,, if yes, then down carry out step 4 if not, then come back to step 1;
Step 4: calculate the etch process parameters correction value by described etching machine;
Step 5: revise its etch process parameters automatically by described etching machine, and get back to step 1.
In specific physical quantity described in the present embodiment step 2, can be for example thickness of the quality of described silicon wafer or size, and the parameter of the etch process of step 4 and step 5 can be the transfer rate of board technological temperature, etchant concentration or silicon wafer conveyer.
The silicon wafer that each sheet is sent in the etching machine repeats said procedure so again and again, and the record of feedback rate of etch is to adjust etch process parameters automatically, reach and to monitor the rate of etch of silicon wafer and sane etch process at any time, to promote the yield of etch process.
Below with concrete instance explanation present embodiment.Known conditions is as follows, etching machine length is 2050mm, when initial, the transfer rate of silicon wafer conveyer is 1.2m/min, the predetermined target value of etch process is the 0.5g of being of poor quality before the etch process and behind the etch process, and the basic resize ratio of the conveyer transfer rate that sets in the etch process control is every gram 0.1m/min (0.1m/min/g).Follow the technology of etch process control method of the present invention as follows:
Step 1 is sent a wafer into described etching machine;
Step 2: in described etching machine, measure before the etch process with etch process after the difference value of quality of described silicon wafer be 0.39g;
Step 3: it is variant to judge the predetermined value 0.5g that establishes in the etching result difference value of described silicon wafer and the described etching machine automatically by described etching machine, so down carry out step 4;
Step 4: the difference that calculates etching result difference value 0.39g and predetermined value 0.5g by described etching machine is for (0.39g)-(0.5g)=(0.11g) (lacked 0.11g), the correction value that is converted into the transfer rate of silicon wafer conveyer is (0.11g) * (0.1m/min/g)=(0.01m/min);
Step 5: automatically the transfer rate of silicon wafer conveyer is modified to (1.2m/min)+(0.01m/min)=(1.19m/min), and then get back to step 1 by described etching machine.
After revising the above-mentioned first time, the transfer rate of silicon wafer conveyer changes to 1.19m/min, etching machine length constant (2050mm).And then get back to step 1 and will descend a slice silicon wafer to send into described etching machine, and continue to repeat identical etching technique, complete program is as follows;
Step 1 is sent next wafer into described etching machine;
Step 2: in described etching machine, measure before the etch process with etch process after the difference value of quality of described silicon wafer be 0.49g;
Step 3: it is variant to judge the predetermined value 0.5g that establishes in the etching result difference value of described silicon wafer and the described etching machine automatically by described etching machine, so down carry out step 4;
Step 4: the difference that calculates etching result difference value 0.49g and predetermined value 0.5g by described etching machine is for (0.49g)-(0.5g)=(0.01g) (lacked 0.01g), the correction value that is converted into the transfer rate of silicon wafer conveyer is (0.01g) * (0.1m/min/g)=(0.001m/min);
Step 5: automatically the transfer rate of silicon wafer conveyer is modified to by described etching machine that (1.19m/min)+(0.001m/min)=(1.189m/min), rounding up approximates 1.19m/min, just remains unchanged, and then gets back to step 1.
The silicon wafer that each sheet is sent in the etching machine repeats said procedure so again and again, and the record of feedback rate of etch is to adjust etch process parameters automatically, reach and to monitor the rate of etch of silicon wafer and sane etch process at any time, to promote the yield of etch process.
More than explanation is just illustrative for the purpose of the present invention, and nonrestrictive, those of ordinary skills understand; under the situation of the spirit and scope that do not break away from following claims and limited, can make many modifications, change; or equivalence, but all will fall within the scope of protection of the present invention.
Claims (3)
1. the etch process control method of a photovoltaic devices is characterized in that, it is to include the following step:
Step 1 a: wafer is sent into an etching machine;
Step 2: in described etching machine, measure, calculate, the described wafer of record before etch process with etch process after the difference of a certain specific physical quantity, and calculate, write down its rate of etch thus;
Step 3: judge automatically by described etching machine whether the predetermined value of establishing in described rate of etch and the described etching machine is variant,, if yes, then down carry out step 4 if not, then come back to step 1;
Step 4: calculate the etch process parameters correction value by described etching machine;
Step 5: revise its etch process parameters automatically by described etching machine, and get back to step 1.
2. the etch process control method of photovoltaic devices as claimed in claim 1 is characterized in that, is the quality of described wafer in the specific physical quantity that step 2 measured.
3. the etch process control method of photovoltaic devices as claimed in claim 1 is characterized in that, is the size of described wafer in the specific physical quantity that step 2 measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102108151A CN102054894A (en) | 2009-11-10 | 2009-11-10 | Method for controlling etching process of photovoltaic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009102108151A CN102054894A (en) | 2009-11-10 | 2009-11-10 | Method for controlling etching process of photovoltaic device |
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| CN102054894A true CN102054894A (en) | 2011-05-11 |
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| CN2009102108151A Pending CN102054894A (en) | 2009-11-10 | 2009-11-10 | Method for controlling etching process of photovoltaic device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103889655A (en) * | 2011-11-07 | 2014-06-25 | 信越半导体株式会社 | Double-sided polishing method |
| CN109545721A (en) * | 2018-12-05 | 2019-03-29 | 西安奕斯伟硅片技术有限公司 | Control the method, control equipment and control system of silicon slice corrosion solution concentration |
-
2009
- 2009-11-10 CN CN2009102108151A patent/CN102054894A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103889655A (en) * | 2011-11-07 | 2014-06-25 | 信越半导体株式会社 | Double-sided polishing method |
| CN103889655B (en) * | 2011-11-07 | 2016-07-20 | 信越半导体株式会社 | Double-side grinding method |
| CN109545721A (en) * | 2018-12-05 | 2019-03-29 | 西安奕斯伟硅片技术有限公司 | Control the method, control equipment and control system of silicon slice corrosion solution concentration |
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Application publication date: 20110511 |