CN102054832B - Pixel structure with capacitance compensation performance - Google Patents
Pixel structure with capacitance compensation performance Download PDFInfo
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- CN102054832B CN102054832B CN2009102099345A CN200910209934A CN102054832B CN 102054832 B CN102054832 B CN 102054832B CN 2009102099345 A CN2009102099345 A CN 2009102099345A CN 200910209934 A CN200910209934 A CN 200910209934A CN 102054832 B CN102054832 B CN 102054832B
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Abstract
The invention provides a pixel structure with capacitance compensation performance, comprising a thin film transistor assembly. The thin film transistor assembly comprises a source electrode, a drain electrode, a semiconductor layer and a gate electrode. The gate electrode is provided with a strip-shaped main body and at least one protruding part or at least two sinking parts. The pixel structure provided by the invention is mainly characterized in that the shapes and the configuration of the source electrode and the gate electrode of the thin film transistor are regulated to ensure that the superposed area of the source electrode and the gate electrode remains unchanged by virtue of the arrangement of the protruding part or the sinking part of the gate electrode when the drain electrode shifts forwards, backwards, leftwards and rightwards relative to the gate electrode, and in addition, the position of the superposed part of the drain electrode and the gate electrode remains unchanged either, that is to say, gate electrode-drain electrode capacitance remains unchanged, therefore, the display quality is further improved.
Description
Technical field
The invention relates to a kind of structure of dot structure, particularly relevant for thin film transistor (TFT) (Thin Film Transistor, TFT) layout of assembly of dot structure.
Background technology
What Fig. 1 illustrated is the partial schematic diagram of known pixel structure.As shown in Figure 1, known dot structure 120 mainly comprises a thin film transistor (TFT) 122, a pixel electrode 124, sweep trace 126 and data line 128.Thin film transistor (TFT) 122 is to be electrically connected at pixel electrode 124.Particularly, thin film transistor (TFT) 122 comprises a grid 122a, a passage area (channel region) 122b, one source pole 122c and a drain electrode 122d.This thin film transistor (TFT) 122 is the structures that belong to bottom-gate (bottom gate), and the drain electrode 122d of thin film transistor (TFT) 122 electrically connects with pixel electrode 124.Can know that by Fig. 1 sweep trace 126 can transfer to thin film transistor (TFT) 122 with appropriate voltage with data line 128, and via thin film transistor (TFT) 122 voltage is sent to pixel electrode 124, to provide voltage difference to liquid crystal layer.
Therefore, how revising the layout of thin film transistor (TFT), change the demonstration problem that causes with the capacitance of preventing effectively, still is problem now.
Summary of the invention
In view of this; A fundamental purpose of the present invention is not change under the prerequisite of exposure program and the forming process of limit transistor array not; By making the overlapping area of grid and drain electrode can not change, guarantee the performance of transistor array with the deviation of the alignment amount between grid light shield and drain electrode light shield.
According to a preferred embodiment of the present invention, the present invention provides a kind of dot structure with capacitance compensation, comprises a thin-film transistor component.Thin-film transistor component comprises one source pole electrode, a drain electrode, semi-conductor layer and a gate electrode.Source electrode comprises one first electrode strip, and drain electrode comprises one second electrode strip, and second electrode strip is parallel to first electrode strip in essence.Semiconductor layer is arranged at source electrode and drain electrode below, and comprises that a passage area, passage area are arranged between first electrode strip and second electrode strip.Gate electrode is arranged at the semiconductor layer below, and gate electrode has a strip body and at least one protuberance or at least two depressed parts.The strip body is parallel to first electrode strip and second electrode strip, and passage area covers the strip body.Wherein, Protuberance or depressed part make second electrode strip leap gate electrode and partly overlap with gate electrode; The opposite end of second electrode strip does not all overlap on vertical direction with gate electrode, and the part that second electrode strip and gate electrode overlap each other forms an electric capacity.
According to another preferred embodiment of the present invention, the present invention provides a kind of dot structure with capacitance compensation in addition, comprises a thin-film transistor component.Thin-film transistor component comprises one source pole electrode, a drain electrode, semi-conductor layer and a gate electrode.Source electrode comprises one first electrode strip, and drain electrode comprises one second electrode strip, and second electrode strip is parallel to first electrode strip in essence.Semiconductor layer is arranged at source electrode and drain electrode below, and comprises that a passage area, passage area are arranged between first electrode strip and second electrode strip.Gate electrode is arranged at the semiconductor layer below, and gate electrode has a strip body and at least one depressed part, and the strip body is parallel to first and second electrode strip, and whole passage area all covers the strip body.Wherein, second electrode strip is crossed over depressed part, and the opposite end of second electrode strip is all overlapped on vertical direction with gate electrode, and the part that second electrode strip and gate electrode overlap each other forms an electric capacity.
In view of the above, even produce the contraposition deviation towards front, rear, left and right between grid light shield and drain electrode light shield, the overlapping area of drain electrode and gate electrode and position still can not change, and promptly gate-to-drain electric capacity can not change, and then promotes display quality.
For letting above-mentioned purpose of the present invention, characteristic and the advantage can be more obviously understandable, hereinafter is special lifts preferred embodiments, and cooperates appended graphicly, elaborates as follows.Yet following preferred embodiments and graphic be as a reference with explanation usefulness, be not to be used for to the present invention's limitr in addition.
Description of drawings
What Fig. 1 illustrated is the partial schematic diagram of known pixel structure.
Fig. 2 illustrates the dot structure partial schematic diagram into first preferred embodiment of the present invention.
Fig. 3 illustrate among Fig. 2 corresponding to the diagrammatic cross-section of A-A ' profile line.
Fig. 4 illustrates the dot structure partial schematic diagram into second preferred embodiment of the present invention.
Fig. 5 illustrate among Fig. 4 corresponding to the diagrammatic cross-section of B-B ' profile line.
Fig. 6 illustrates the dot structure partial schematic diagram into the 3rd preferred embodiment of the present invention.
Fig. 7 illustrates the dot structure partial schematic diagram into the 4th preferred embodiment of the present invention.
Fig. 8 illustrates the dot structure partial schematic diagram into the 5th preferred embodiment of the present invention.
Fig. 9 illustrates the dot structure partial schematic diagram into the 6th preferred embodiment of the present invention.
Embodiment
Below graphic only be to show preferred embodiments more of the present invention qualitatively; Only if the relevant limit condition of expressly writing out is arranged, otherwise these graphic quantity that do not limit transistor proposed by the invention or each component units of transistor array, shape, relative angle, relative distance, relative position or the like details.And the various of following each embodiment possibly change, and must set up together only if there is special plaintext to write out, and these possibly change all is separate, can optionally mix use.
Fig. 2 illustrates the dot structure partial schematic diagram into first preferred embodiment of the present invention, and Fig. 3 illustrate among Fig. 2 corresponding to the diagrammatic cross-section of A-A ' profile line.Identical assembly or position are continued to use identical symbol and are represented.Wherein, the partial schematic diagram that only illustrates single dot structure in graphic of the present invention, and the present invention in fact also can comprise the pel array that a plurality of pixels constitute, and can be applicable in the various display device, for example liquid crystal indicator.In addition, for the clear layout patterns that demonstrates dot structure, the structure of Fig. 2 is to illustrate with perspective fashion, yet actual modular construction need not be limited as transparent material.Please be simultaneously with reference to figure 2 and Fig. 3, dot structure 220 of the present invention mainly comprises a thin film transistor (TFT) 222, a pixel electrode 224, sweep trace 225 and data line 228.In more detail, thin film transistor (TFT) 222 comprises one source pole electrode 202, a drain electrode 204, semi-conductor layer 205, a gate electrode 226, first dielectric layer 230 and second dielectric layer 232.Thin film transistor (TFT) 222 is positioned on the substrate 200, and the drain electrode 204 of thin film transistor (TFT) 222 is to be electrically connected at pixel electrode 224, and source electrode 202 is to electrically connect with data line 228, and gate electrode 226 electrically connects sweep trace 225.
The material of first dielectric layer 230 is the material that is electrically insulated, and it for example is silicon nitride, monox or silicon oxynitride, but and first dielectric layer, 230 cover gate electrodes 226, with usefulness as gate dielectric.Semiconductor layer 205 is arranged on first dielectric layer 230 of gate electrode 226 tops; Its material for example is amorphous silicon or polysilicon; Wherein if semiconductor layer 205 is selected amorphous silicon layer for use; Then the passage of thin film transistor (TFT) 222 can be unadulterated intrinsic semiconductor layer, and if semiconductor layer 205 is selected polysilicon layer for use, then in order to form the passage of thin film transistor (TFT) 222; Can mix in the part or all of semiconductor layer 205 P type admixture or N type admixture, and the part that semiconductor layer 205 is doped promptly can be used as a passage area 206.In present embodiment, but whole passage area 206 equal cover gate electrodes 226, and the strip body 226a of gate electrode 226 and protuberance 226b are all covered by passage area 206.In other words, from bottom to top see it, passage area 206 is to be covered by the strip body 226a of gate electrode 226 and protuberance 226b fully.In order to reduce the impedance of semiconductor layer 205, more can above semiconductor layer 205, form an ohmic contact layer 234, as the interlayer that contacts between semiconductor layer 205 and source electrode 202 and the drain electrode 204, to reduce contact resistance.
Second dielectric layer 232 can cover source electrode 202, drain electrode 204 and data line 228, and pixel electrode 224 can be arranged on second dielectric layer 232.The material of second dielectric layer 232 for example is silicon nitride, monox or silicon oxynitride.Pixel electrode 224 can contact and be electrically connected to an end of second electrode strip 218 through a contact hole 208, and in fact so-called here contact hole 208 can be the opening of second dielectric layer 232.
The protuberance 226b that can cross over gate electrode 226 owing to drain electrode 204 stretches out; Protuberance 226b can cross over second electrode strip 218 of drain electrode 204 and stretch out; And the opposite end of second electrode strip 218 can not overlap on vertical direction with gate electrode 226; Therefore in the process of making drain electrode 204; Even because of the error of light shield contraposition or the vibrations of board, cause drain electrode 204 and gate electrode 226 on vertical or horizontal, the error in a little contraposition to be arranged, but the area of electric capacity 210 and position all can not change.In other words, the value of gate-to-drain electric capacity still can be kept a fixed value, and then keeps the stable of pixel feedback voltage, to guarantee thin film transistor liquid crystal display device institute picture displayed quality.In addition, since the strip body 226a of whole passage area 206 equal cover gate electrodes 226, the passage when therefore whole passage area 206 all can be used as thin film transistor (TFT) 222 practical functions, so present embodiment has preferable thin film transistor (TFT) 222 layouts.
It should be noted that; First embodiment and graphic in be that the source electrode 202 of drain electrode 204 and the elongated rectangular shape of protuberance 226b, elongated rectangular shape with rectangle be that example is explained, but the shape of the present invention and unrestricted gate electrode 226, drain electrode 204 and source electrode 202.That is to say; Gate electrode 226, drain electrode 204 can also be other shapes with the shape of source electrode 202; For example be that protuberance 226b can be shapes such as circle, polygon, gate electrode 226 also can have depressed part, and perhaps drain electrode 204 can also be square or other shape.
Please refer to Fig. 4 and Fig. 5.Fig. 4 illustrates the dot structure partial schematic diagram into second preferred embodiment of the present invention, and Fig. 5 illustrate among Fig. 4 corresponding to the diagrammatic cross-section of B-B ' profile line.Different for ease of present embodiment relatively and first preferred embodiment, the symbol that present embodiment is identical with first preferred embodiment use marks identical symbol.Like Fig. 4 and shown in Figure 5; Be with the first preferred embodiment difference; In the present embodiment, semiconductor layer 205 extending to top and below further is therefore by watching semiconductor layer 205 to exceed first electrode strip 216 and second electrode strip 218 on the vertical direction.By configuration like this; Even first electrode strip 216 or second electrode strip 218 are because of the error of light shield contraposition or factors such as the vibrations generation skew of board, first electrode strip 216 or second electrode strip 218 also can not change with the semiconductor layer 205 formed overlapping areas of below.Because semiconductor layer 205 can be brought into play the effect of capacitance dielectric layer at this, so this design also can make the value of gate-to-drain electric capacity can keep a fixed value.
Please refer to Fig. 6, Fig. 6 illustrates the dot structure partial schematic diagram into the 3rd preferred embodiment of the present invention.As shown in Figure 6, dot structure 420 of the present invention mainly comprises a thin film transistor (TFT) 422, a pixel electrode 424, sweep trace 425 and data line 428.Thin film transistor (TFT) 422 comprises one source pole electrode 402, a drain electrode 404, a gate electrode 426 and semi-conductor layer 405, and wherein semiconductor layer 405 comprises passage area 406.Thin film transistor (TFT) 422 also can comprise first dielectric layer, second dielectric layer (figure does not show) as previous embodiment, and source electrode 402 can comprise first electrode strip 416, and drain electrode 404 can comprise second electrode strip 418.In order to stress the characteristic of present embodiment, the similar arrangement of components of each embodiment, material setting will be repeated no more with similar impartial place.
The main difference of the present embodiment and first embodiment be in; The gate electrode 426 of second embodiment is to have a strip body 426a and two protuberance 426b, 426c; And single second electrode strip 418 can be crossed over two protuberance 426b, the 426c of gate electrode 426, makes the opposite end of second electrode strip 418 also can on vertical direction, not overlap with gate electrode 426.Therefore, can have two zones that overlap each other between second electrode strip 418 and the gate electrode 426, and these two overlapping zones can form an electric capacity 410 respectively.Therefore in present embodiment, but only the strip body 426a of the passage area 406 cover gate electrodes 426 of part and two protuberance 426b, 426c.In other words, from bottom to top see it, the passage area 406 of part is not covered by gate electrode 426.
Another main difference of the present embodiment and first embodiment be in, the drain electrode 404 of second embodiment can comprise a third electrode bar 414 in addition, and third electrode bar 414 can be arranged between two protuberance 426b, the 426c perpendicular to second electrode strip 418.One end of third electrode bar 414 is connected to second electrode strip 418, and pixel electrode 424 can contact and be electrically connected to the other end of third electrode bar 414 through a contact hole 408.In view of the above, second electrode strip 418 of drain electrode 404 is T-shaped with third electrode bar 414, and the electrical situation of second electrode strip, 418 opposite ends can be consistent.Owing to second electrode strip 418 is to see through third electrode bar 414 to be electrically connected to pixel electrode 424, second electrode strip 418 of present embodiment itself can not contact pixel electrode 424, but is not limited thereto.
Owing to drain electrode 404 can be crossed over gate electrode 426 and stretches out; Two protuberance 426b, 426c also can cross over second electrode strip 418 and stretch out; And the opposite end of second electrode strip 418 can not overlap on vertical direction with gate electrode 426; Even therefore drain electrode 204 has the error in a little contraposition with gate electrode 226 on vertical or horizontal, but the area of two electric capacity 410 and position all can not change.
Please refer to Fig. 7, Fig. 7 illustrates the dot structure partial schematic diagram into the 4th preferred embodiment of the present invention.As shown in Figure 7, dot structure 520 of the present invention mainly comprises a thin film transistor (TFT) 522, a pixel electrode 524, sweep trace 525 and data line 528.Thin film transistor (TFT) 522 comprises one source pole electrode 502, a drain electrode 504, a gate electrode 526 and semi-conductor layer 505.Wherein, semiconductor layer 505 comprises passage area 506, and source electrode 502 can comprise first electrode strip 516, and drain electrode 504 can comprise second electrode strip 518.
The main difference of present embodiment and aforementioned two embodiment be in; The gate electrode 526 of the 3rd embodiment has a strip body 526a and two depressed part 512a, 512b, and the opposite end of second electrode strip 518 corresponds respectively to two depressed part 512a, 512b of gate electrode 526 and is provided with.Therefore, second electrode strip 518 can form an electric capacity 510 with the overlapping zone of gate electrode 526.In present embodiment, but the strip body 526a of whole passage area 506 equal cover gate electrodes 526.That is, from bottom to top see it, passage area 506 is covered by the strip body 526a of gate electrode 526 fully.Since the strip body 526a of whole passage area 506 equal cover gate electrodes 526, the passage when therefore whole passage area 506 all can be used as thin film transistor (TFT) 522 practical functions, so present embodiment also has preferable thin film transistor (TFT) 522 layouts.
Another main difference of the present embodiment and first embodiment be in; The drain electrode 504 of the 4th preferred embodiment comprises a third electrode bar 514 in addition; Third electrode bar 514 perpendicular to second electrode strip 518 and corresponding to depressed part 512a, 512b one of them and be provided with, for example Fig. 7 is corresponding to depressed part 512a.One end of third electrode bar 514 is connected to second electrode strip 518, and pixel electrode 524 can be electrically connected to the other end of third electrode bar 514 through a contact hole 508.In view of the above, second electrode strip 518 of drain electrode 504 is L-shaped with third electrode bar 514, and pixel electrode 524 can have bigger area.That is the dot structure 520 of the 4th preferred embodiment can have bigger aperture opening ratio.
Please refer to Fig. 8, Fig. 8 illustrates the dot structure partial schematic diagram into the 5th preferred embodiment of the present invention.As shown in Figure 8, dot structure 620 of the present invention mainly comprises a thin film transistor (TFT) 622, a pixel electrode 624, sweep trace 625 and data line 628.Thin film transistor (TFT) 622 comprises one source pole electrode 602, a drain electrode 604, a gate electrode 626 and semi-conductor layer 605.Wherein, semiconductor layer 605 comprises passage area 606, and source electrode 602 can comprise first electrode strip 616, and drain electrode 604 can comprise second electrode strip 618.Gate electrode 626 has a strip body 626a and two depressed part 612a, 612b.Second electrode strip 618 can form electric capacity 610 with the overlapping zone of gate electrode 626.
The main difference of present embodiment and the 3rd embodiment be in, the drain electrode 604 of the 5th preferred embodiment also comprises one the 4th electrode strip 614b.The the 3rd and the 4th electrode strip 614a, 614b be all perpendicular to second electrode strip 618, and third electrode bar 614a and the 4th electrode strip 614b correspond respectively to depressed part 612a and depressed part 612b.The end of the end of third electrode bar 614a and the 4th electrode strip 614b is connected to the opposite end of second electrode strip 618 respectively, and pixel electrode 624 sees through two contact holes 608 and is electrically connected to the other end of third electrode bar 614a and the other end of the 4th electrode strip 614b respectively.In view of the above; The dot structure 620 of the 5th preferred embodiment also can have bigger aperture opening ratio; And between drain electrode 604 and the pixel electrode 624 to be connected meeting more firm, the electric connection between drain electrode 604 and the pixel electrode 624 also can have better fiduciary level.In addition, since whole passage area 606 equal cover gate electrodes 626, the passage when therefore whole passage area 606 all can be used as thin film transistor (TFT) 622 practical functions, so present embodiment has preferable thin film transistor (TFT) 622 layouts.
Please refer to Fig. 9, Fig. 9 illustrates the dot structure partial schematic diagram into the 6th preferred embodiment of the present invention.As shown in Figure 9, dot structure 720 of the present invention mainly comprises a thin film transistor (TFT) 722, a pixel electrode 724, sweep trace 725 and data line 728.Thin film transistor (TFT) 722 comprises one source pole electrode 702, a drain electrode 704, a gate electrode 726 and semi-conductor layer 705.Wherein, semiconductor layer 705 comprises passage area 706, and source electrode 702 can comprise first electrode strip 716, and drain electrode 704 can comprise second electrode strip 718.
The main difference of present embodiment and aforementioned each embodiment be in; The gate electrode 726 of the 6th preferred embodiment only has a strip body 726a and single depressed part 712; Second electrode strip 718 is crossed over depressed part 712; The opposite end of second electrode strip 718 is all overlapped on vertical direction with gate electrode 726, and second electrode strip 718 form an electric capacity 710 with the part that gate electrode 726 overlaps each other.Drain electrode 704 also comprises a third electrode bar 714.Third electrode bar 714 is perpendicular to second electrode strip 718, and third electrode bar 714 is corresponding to depressed part 712.One end of third electrode bar 714 is connected to second electrode strip 718, and pixel electrode 724 can be electrically connected to the other end of third electrode bar 714 through a contact hole 708.In view of the above, the dot structure 720 of the 6th preferred embodiment also can have bigger aperture opening ratio.In addition, since the strip body 726a of whole passage area 706 equal cover gate electrodes 726, the passage when therefore whole passage area 706 all can be used as thin film transistor (TFT) 722 practical functions, so present embodiment has preferable thin film transistor (TFT) 722 layouts.
In sum; Dot structure of the present invention has advantage at least: even a drain electrode and gate electrode have the error in a little contraposition on vertical or horizontal; The area of gate-to-drain electric capacity of the present invention and position all can not change, and then keep thin film transistor liquid crystal display device institute picture displayed quality; Two, data line, source electrode all can form in same material layer and patterning process with drain electrode, and sweep trace, strip body all can be made with the pattern of protuberance, only need change layout patterns, need not extra increase processing procedure; Three, in the embodiment of part, since the strip body of whole equal cover gate electrodes of passage area, the passage when therefore whole passage area all can be used as the thin film transistor (TFT) practical function.
The above is merely preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (9)
1. the dot structure with capacitance compensation is characterized in that, comprising:
One thin-film transistor component comprises:
The one source pole electrode comprises one first electrode strip;
One drain electrode comprises one second electrode strip, and this second electrode strip is parallel to this first electrode strip;
Semi-conductor layer is arranged at this source electrode and this drain electrode below, and comprises that a passage area, this passage area are arranged between this first electrode strip and this second electrode strip; And
One gate electrode; Be arranged at this semiconductor layer below, this gate electrode has a strip body, and at least one protuberance or at least two depressed parts; This strip body is parallel to this first electrode strip and this second electrode strip, and this passage area covers this strip body;
One data line, this data line be perpendicular to this first electrode strip, and be connected with this first electrode strip;
One pixel electrode, this pixel electrode are electrically connected to this second electrode strip;
Wherein, This protuberance or these depressed parts make this second electrode strip this gate electrode of leap and partly overlap with this gate electrode; The opposite end of this second electrode strip does not all overlap on vertical direction with this gate electrode, and the part that this second electrode strip and this gate electrode overlap each other forms an electric capacity.
2. dot structure as claimed in claim 1 is characterized in that, this second electrode strip is only crossed over a protuberance of this gate electrode.
3. dot structure as claimed in claim 2; It is characterized in that; These whole passage area all cover this gate electrode; And this strip body and this protuberance of this gate electrode are all covered by this passage area, and this pixel electrode is electrically connected to an end of this second electrode strip through a contact hole.
4. dot structure as claimed in claim 1 is characterized in that, this second electrode strip is crossed over two protuberances of this gate electrode, and this passage area covers two protuberances of this gate electrode.
5. dot structure as claimed in claim 4; It is characterized in that; This drain electrode also comprises a third electrode bar; This third electrode bar is arranged between this two protuberance perpendicular to this second electrode strip, and an end of this third electrode bar is connected to this second electrode strip, and this pixel electrode is electrically connected to the other end of this third electrode bar through a contact hole.
6. dot structure as claimed in claim 1 is characterized in that, the opposite end of this second electrode strip corresponds respectively to two depressed parts of this gate electrode and is provided with, and this whole passage area all covers this strip body of this gate electrode.
7. dot structure as claimed in claim 6; It is characterized in that; This drain electrode also comprises a third electrode bar; This third electrode bar perpendicular to this second electrode strip and corresponding to these depressed parts one of them and be provided with, an end of this third electrode bar is connected to this second electrode strip, and this pixel electrode sees through a contact hole and is electrically connected to the other end of this third electrode bar.
8. dot structure as claimed in claim 6; It is characterized in that; This drain electrode also comprises a third electrode bar and one the 4th electrode strip; The 3rd with the 4th electrode strip all perpendicular to this second electrode strip; The 3rd corresponds respectively to this two depressed part and is provided with the 4th electrode strip, and an end of this third electrode bar and an end of the 4th electrode strip are connected to this second electrode strip respectively, and this pixel electrode is through two contact holes and be electrically connected to the other end of this third electrode bar and the other end of the 4th electrode strip respectively.
9. the dot structure with capacitance compensation is characterized in that, comprising:
One thin-film transistor component comprises:
The one source pole electrode comprises one first electrode strip;
One drain electrode comprises one second electrode strip, and this second electrode strip is parallel to this first electrode strip;
Semi-conductor layer is arranged at this source electrode and this drain electrode below, and comprises that a passage area, this passage area are arranged between this first electrode strip and this second electrode strip; And
One gate electrode; Be arranged at this semiconductor layer below; This gate electrode has a strip body and at least one depressed part, this strip body be parallel to this first with this second electrode strip, and this whole passage area all covers this strip body of this gate electrode;
One data line, this data line be perpendicular to this first electrode strip, and be connected with this first electrode strip;
One pixel electrode, this pixel electrode are electrically connected to this second electrode strip;
Wherein, this second electrode strip is crossed over this depressed part, and the opposite end of this second electrode strip is all overlapped on vertical direction with this gate electrode, and the part that this second electrode strip and this gate electrode overlap each other forms an electric capacity.
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| CN103746000B (en) * | 2013-12-25 | 2017-03-08 | 深圳市华星光电技术有限公司 | A kind of polysilicon TFT device and its manufacture method |
| CN103915509B (en) * | 2014-03-25 | 2017-07-18 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), array base palte and display device |
| KR102396288B1 (en) | 2014-10-27 | 2022-05-10 | 삼성디스플레이 주식회사 | Organic light emitting diode display device |
| CN105140243A (en) * | 2015-09-24 | 2015-12-09 | 重庆京东方光电科技有限公司 | Array substrate, manufacturing method thereof and display device |
| CN106920529B (en) * | 2017-05-09 | 2019-03-05 | 深圳市华星光电技术有限公司 | Pixel unit and array substrate comprising it |
| CN109946896A (en) * | 2019-04-09 | 2019-06-28 | 惠科股份有限公司 | Array substrate, active switch array substrate and liquid crystal display device |
| CN114914299A (en) * | 2022-05-11 | 2022-08-16 | 深圳市华星光电半导体显示技术有限公司 | Special-shaped thin film transistor and array substrate |
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| JP2005070746A (en) * | 2003-08-04 | 2005-03-17 | Seiko Epson Corp | Electrooptical device, method of manufacturing the same, and electronic equipment |
| CN1971910A (en) * | 2005-11-22 | 2007-05-30 | 奇美电子股份有限公司 | LCD apparatus, pixel array base plate and method for preventing flicker of display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005070746A (en) * | 2003-08-04 | 2005-03-17 | Seiko Epson Corp | Electrooptical device, method of manufacturing the same, and electronic equipment |
| CN1971910A (en) * | 2005-11-22 | 2007-05-30 | 奇美电子股份有限公司 | LCD apparatus, pixel array base plate and method for preventing flicker of display panel |
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Effective date of registration: 20230601 Address after: Lake 558, Fen Hu Town, Wujiang District, Jiangsu, Suzhou Patentee after: Wujiang FenHu technology entrepreneurship Service Co.,Ltd. Address before: 215217, No. 88, Tung Hing Road, Tongli District, Wujiang Economic Development Zone, Suzhou, Jiangsu Patentee before: CPTW (WUJIANG) Co.,Ltd. Patentee before: Chunghwa Picture Tubes, Ltd. |
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