CN102054831A - Array substrate and display - Google Patents
Array substrate and display Download PDFInfo
- Publication number
- CN102054831A CN102054831A CN200910207141XA CN200910207141A CN102054831A CN 102054831 A CN102054831 A CN 102054831A CN 200910207141X A CN200910207141X A CN 200910207141XA CN 200910207141 A CN200910207141 A CN 200910207141A CN 102054831 A CN102054831 A CN 102054831A
- Authority
- CN
- China
- Prior art keywords
- transistor
- substrate
- display
- electrode
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a display, which comprises a first substrate, a transistor array substrate and a shading layer, wherein the first substrate comprises a first electrode; the transistor array substrate comprises a plurality of pixels which are arranged in an array; each pixel comprises a transistor and a pixel electrode which is electrically connected with the transistor; a display medium is positioned between the first electrode and the pixel electrode; and the shading layer is positioned between the first substrate and the transistor. In the display, the shading layer can protect the transistor from generating light leakage current, so that displaying quality is enhanced.
Description
Technical field
The present invention relates to a kind of display unit, relate in particular to a kind of display of high contrast.
Background technology
Figure 1A is the schematic top plan view of micro-cell structure in above-mentioned a kind of existing electrophoretic display device (EPD), and Figure 1B is the local amplification stereogram of the existing electrophoretic display device (EPD) of Figure 1A.Please refer to Figure 1A and Figure 1B, the material of the curtain wall structure 130 in traditional electrophoretic display device (EPD) 100 is a transparent material, is that fluid 140b and a plurality of white particles 140a that is dispersed among the black fluid 140b by black constituted and insert display medium 140 in the micro-cell structure 150.Shown in Figure 1B, when the electric field between the common electrode 112 on pixel electrode on the transistor (TFT) array substrate 120 122 and the electrophoresis substrate 110 changes, white particles 140a just can move up or down with respect to fluid 140b according to direction of an electric field, and then present black or white image, reach the effect of demonstration.
On the application of reality, consideration based on power saving and convenience, above-mentioned electrophoretic display device (EPD) many with front light-source (front light) or external light source as light source, the user presents black or white image from the unilateral observation of electrophoresis substrate to display unit by front light-source or external light source.Yet, shown in Figure 1B, electrophoresis substrate 110 and transistor (TFT) array substrate 120 after applying, the transistor 124 on the part transistor (TFT) array substrate 120 can be positioned at curtain wall structure 130 under.Thus, because curtain wall structure 130 is a transparent material, light L by transparent curtain wall structure 130 will be incident to transistor (TFT) array substrate 120, will make each metallic diaphragm generation light leak reflection in the transistor (TFT) array substrate make demonstration contrast the transistor 124 in reduction and its drop shadow spread, meeting thereby make that the charge carrier of channel region absorbs the energy of light L and produces leakage current in the transistor 124 causes the picture display abnormality.Than severe patient, bigger leakage current will cause the data wire that is electrically connected with it to burn moment, and produce line defect, and therefore existing electrophoretic display device (EPD) has that transistor is subject to ambient light effects and the shortcoming that produces leakage current.
From the above, existing electrophoretic display device (EPD) also can't avoid reflection of ambient light light leak and transistor to be subjected to extraneous light influence and the problem of generation leakage current.Therefore, how properly to design electrophoresis display structure, so that the problem that electrophoretic display device (EPD) can be avoided producing above-mentioned leakage current when utilizing surround lighting to show also improves the demonstration contrast, real is the problem that electrophoretic display device (EPD) is demanded urgently overcoming.
Summary of the invention
The invention provides a kind of array base palte, it can avoid the problem of light leak and improve showing contrast.
The invention provides a kind of display, it can be avoided transistor to produce the problem of leakage current and improve the demonstration contrast.
The present invention proposes a kind of array base palte, and it comprises substrate and the pixel of a plurality of arrayed on substrate.Wherein, each pixel comprises transistor, is electrically connected transistorized pixel electrode and is positioned at light shield layer on the transistor.
In one embodiment of this invention, above-mentioned light shield layer is between pixel electrode and transistor.
The present invention proposes a kind of high contrast display, and this high contrast display comprises first substrate, transistor (TFT) array substrate, first electrode, a plurality of display medium.The transistor (TFT) array substrate and first substrate are oppositely arranged.First electrode is positioned at the one side of first real estate to transistor (TFT) array substrate.A plurality of display mediums are arranged between first substrate and the transistor (TFT) array substrate.Particularly, transistor (TFT) array substrate comprises one second substrate and the pixel of a plurality of arrayed on second substrate, and wherein each pixel comprises a transistor and a pixel electrode.Pixel electrode is electrically connected transistor, and wherein display medium is between first electrode and pixel electrode.Light shield layer is between display medium and transistor.The multiple high contrast display that all the other the present invention carried will be specified among the embodiment respectively.
Because the high display that contrasts of the present invention has the light shield layer that can cover extraneous light, avoid irradiate light and the phenomenon of leakage current take place and improve showing contrast in order to protective transistor.Moreover, the manufacturing process compatibility height of light shield layer of the present invention and active component array base board, and directly be integrated in the manufacturing process of active component array base board, therefore in the display quality that promotes electrophoretic display device (EPD), can't spend extra cost of manufacture.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is the schematic top plan view of micro-cell structure in above-mentioned a kind of existing electrophoretic display device (EPD).
Figure 1B is the local amplification stereogram of the existing electrophoretic display device (EPD) of Figure 1A.
Fig. 2 A illustrates the generalized section into the height contrast display of one embodiment of the invention.
Fig. 2 B illustrates the generalized section into the electrophoretic display device (EPD) of one embodiment of the invention.
Fig. 3 A is the partial cutaway schematic of the height contrast display of another embodiment of the present invention.
Fig. 3 B is the partial cutaway schematic of the electrophoretic display device (EPD) of another embodiment of the present invention.
Fig. 4 A is the partial cutaway schematic of the height contrast display of another embodiment of the present invention.
Fig. 4 B is the partial cutaway schematic of the electrophoretic display device (EPD) of another embodiment of the present invention.
Fig. 5 A is the partial cutaway schematic of the height contrast display of another embodiment of the present invention.
Fig. 5 B is the partial cutaway schematic of the electrophoretic display device (EPD) of another embodiment of the present invention.
Drawing reference numeral:
100,200b, 300b, 400b, 500b: electrophoretic display device (EPD)
200a, 300a, 400a, 500a: high contrast display
112,214: common electrode
124,228: transistor
120,220: transistor (TFT) array substrate
122,226: pixel electrode
130: curtain wall structure
140,216,418: display medium
140a, 418a: toner
140b, 418b: fluid
210: the first substrates
212: substrate
216: display medium
222: the second substrates
224: pixel
230: light shield layer
232: display medium
260: adhesion layer
310: protective layer
320: grid
330: channel layer
340: source electrode
350: drain electrode
410: the electrophoresis substrate
416: transparent partition wall
440: micro-cell structure
450: overcoat
L, L1: light
H: opening
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the embodiment of the invention is described in further details below in conjunction with accompanying drawing.At this, illustrative examples of the present invention and explanation thereof are used to explain the present invention, but not as a limitation of the invention.
Fig. 2 A illustrates the generalized section into the height contrast display of one embodiment of the invention.Please refer to Fig. 2 A, the height contrast display 200a of present embodiment mainly comprises first substrate 210, transistor (TFT) array substrate 220, first electrode 214, a plurality of display medium 216.The transistor (TFT) array substrate 220 and first substrate 210 are oppositely arranged.First electrode 214 is positioned at the one side of first substrate 210 towards transistor (TFT) array substrate 220.A plurality of display mediums 216 are arranged between first substrate 210 and the transistor (TFT) array substrate 220, wherein display medium can be cholesterol liquid crystal and high polymer dispersed liquid crystal one of them.Particularly, transistor (TFT) array substrate 220 comprises one second substrate 222 and the pixel 224 of a plurality of arrayed on second substrate 222, and wherein each pixel 224 comprises a transistor 228 and a pixel electrode 226.Pixel electrode 226 is electrically connected transistor 228, and wherein display medium 216 is between first electrode 214 and pixel electrode 226.Light shield layer 230 is between display medium 216 and transistor 228.Below will enumerate a kind of embodiment that is applied to electrophoretic display device (EPD) and further specify the present invention, it should be noted that it is representative that following examples are only enumerated electrophoretic display device (EPD), but not in order to limit the present invention.High contrast display of the present invention can also be applied in the plurality of liquid crystals display.
Fig. 2 B illustrates the generalized section into the electrophoretic display device (EPD) of one embodiment of the invention.Please refer to Fig. 2 B, in the present embodiment, high contrast display 200b is an electrophoretic display device (EPD), and high contrast display 200b is made of as first substrate 210, transistor (TFT) array substrate 220 and light shield layer 230 electrophoresis substrate 410.Electrophoresis substrate 410 has a substrate 212 and one second substrate 222 respectively with transistor (TFT) array substrate 220, wherein the substrate 212 and second substrate 222 can be selected the bendable substrate with flexural property for use, and constituting bendable electrophoretic display device (EPD) 200, the present invention is not as limit.In the present embodiment, electrophoresis substrate 410 comprises common electrode 214, transparent partition wall 416 and a plurality of display medium 418.Common electrode 214 is positioned on the substrate 212.Transparent partition wall 416 is positioned on the common electrode 214, for example is arrayed micro-cell structure 440 to define a plurality of on common electrode 214.Shown in Fig. 2 B, transistor (TFT) array substrate 220 comprises the pixel 224 of a plurality of arrayed in second substrate 222, wherein each pixel 224 mainly be by pixel electrode 226 and control pixel electrode 226 transistor 228 constituted.
Shown in Fig. 2 B, display medium 418 is between common electrode 214 and pixel electrode 226, in order to decide the shown color in zone according to the voltage difference between its corresponding pixel electrode 226 and the common electrode 214.In addition, light shield layer 230 is arranged between electrophoresis substrate 410 and the transistor 228, in order to stop the light incident transistor 228 from transparent partition wall 416.In addition, electrophoresis substrate 410 can also be on transparent partition wall 416 and display medium 418 covered protection layer 450 optionally, and electrophoresis substrate 410 can be fitted by an adhesion layer 260 and with transistor (TFT) array substrate 220 again.
Please continue B with reference to Fig. 2, each display medium 418 fills in respectively in each micro-cell structure 440, and have a plurality of toner 418a in the display medium 418, more specifically, constituted by color different fluid 418b and toner 418a, wherein fluid 418b is filled in the space of micro-cell structure 440, and toner 418a then is scattered among the fluid 418b.With white particles and black fluid 418b is example, when having a voltage difference between the common electrode 214 of display medium 418 both sides and the pixel electrode 226, toner 418a can move with respect to fluid 418b according to direction of an electric field, to change the quantity of the toner 418a of adjacent substrate 212 in each display medium 418, and then make each display medium 418 present the image of black or white, reach display effect.
It should be noted that to be different from existingly that electrophoretic display device (EPD) 200b of the present invention is provided with light shield layer 230 between transistor 228 and electrophoresis substrate 410.Thus, transistor 228 can cover light by transparent partition wall 416 by light shield layer 230, avoids light incident transistor 228, influences the normal operation of charge carrier in the transistor 228, and then suppresses the generation of leakage current and improve to show contrast.What deserves to be mentioned is that the light shield layer 230 of present embodiment for example is that whole ground covers on pixel electrode 226 and the transistor 228, and need not the patterning manufacturing process, so manufacturing process is simple and easy.Certainly, light shield layer 230 of the present invention also can only be covered in a side of transistor 228 contiguous electrophoresis substrates 410 in other embodiments, and need not cover on second substrate 222 on whole ground.Perhaps, light shield layer 230 can also be the transistor 228 that only covers transparent partition wall 416 belows, can stop the light incident transistor 228 that penetrates transparent partition wall 416, effectively prevent the generation of leakage current, safeguard the display quality of electrophoretic display device (EPD), so the present invention does not limit the layout scope of light shield layer 230 on electrophoretic display device (EPD) 200b.In brief, overlooking on the direction of electrophoretic display device (EPD) 200b, the covering scope of light shield layer 230 only need satisfy the overlapping region that covers transparent partition wall 416 and transistor 228 at least and get final product.
Certainly, light shield layer 230 also can be directly to be integrated in arbitrary making flow process of transistor (TFT) array substrate 220, thereby the present invention does not limit the position of light shield layer 230 on electrophoretic display device (EPD) 200b profile direction.More specifically, on the profile direction of electrophoretic display device (EPD) 200b, the side that light shield layer 230 only need satisfy covering transistor 228 contiguous electrophoresis substrates 410 gets final product, in other words, light shield layer 230 can be configured in transistor 228 in the arbitrary rete between the substrate 212, looks closely product category and manufacturing process and decides.Based on aforementioned, light shield layer 230 of the present invention is in the design of overlooking direction of electrophoretic display device (EPD) 200b, light shield layer 230 covers the overlapping scope of transparent partition wall 416 and transistor 228 at least, and in electrophoretic display device (EPD) 200b, form in the design of thickness direction of rete, light shield layer 230 is positioned at a side of transistor 228 adjacent substrate 212.So, electrophoretic display device (EPD) 200b of the present invention can cover the influence of extraneous light for transistor 228 by light shield layer 230, keeps transistor 228 original element characteristics, avoids producing the destruction of leakage current and improve showing contrast.
Shown in Fig. 2 B, because light shield layer 230 is between transparent partition wall 416 and transistor 228, and light shield layer 230 is contained the overlapping scope of transparent partition wall 416 and transistor 228, therefore light shield layer 230 of the present invention is suitable for covering the light L1 from substrate 212 side incidents, make the transistor 228 that is covered by light shield layer 230 avoid irradiate light, and then keep normal element characteristic.And on practice, the material of light shield layer 230 can be selected from the material with shaded effect and make, and is example with the dielectric material, can be black resin, and the present invention is not as limit.
Fig. 3 A, 3B are the partial cutaway schematic of the height contrast display of another embodiment of the present invention, and wherein the difference of Fig. 3 A and Fig. 3 B is that Fig. 3 B is that first substrate is the electrophoretic display device (EPD) 300b of electrophoresis substrate 410.Please refer to Fig. 3 A, the light shield layer 230 among the height contrast display 300a of present embodiment is between pixel electrode 226 and transistor 228.In detail, in the present embodiment, have the protective layer 310 of a covering transistor 228 on the transistor (TFT) array substrate 220, and pixel electrode 226 can be via protective layer 310 corresponding opening H be electrically connected with corresponding transistor 228.As shown in Figure 3A; light shield layer 230 is between protective layer 310 and pixel electrode 226; in other words; in the height contrast display 300a of present embodiment; comprise the lamination that light shield layer 230 and protective layer 310 are constituted between transistor 228 and the pixel electrode 226; and light shield layer 230 can expose the opening H of protective layer 310, so that pixel electrode 226 is electrically connected with transistor 228 via the common open H of light shield layer 230 and protective layer 310.In the present embodiment, wherein the material of light shield layer 230 is different with the material of protective layer 310.Certainly, the light shield layer 230 of present embodiment and the position of protective layer 310 can reach the transistorized effect of shield lights incident equally exchanging, and prevent from leakage current and improve to show contrast.
Fig. 4 A, 4B are the partial cutaway schematic of the height contrast display of another embodiment of the present invention, and wherein the difference of Fig. 4 A and Fig. 4 B is that Fig. 4 B is that first substrate is the electrophoretic display device (EPD) 400b of electrophoresis substrate 410.Please refer to Fig. 4 A, compared to previous embodiment, the light shield layer 230 of the height of present embodiment contrast display 400a is to cover pixel electrode 226 and transistor 228.
Fig. 5 A, 5B are the partial cutaway schematic of the height contrast display of another embodiment of the present invention, and wherein the difference of Fig. 5 B and Fig. 5 A is that Fig. 5 B is that first substrate is the electrophoretic display device (EPD) 500b of electrophoresis substrate 410.Please refer to Fig. 5 A; compared to previous embodiment; protective layer 310 among the height contrast display 500a of present embodiment is directly to make with the shading material; in other words; single protective layer 310 is only arranged between transistor 228 and the pixel electrode 226; and this protective layer 310 can be played the part of the role of light shield layer 230 simultaneously, has the effect of shading concurrently.Therefore, be positioned at the protective layer 310 that transistor 228 tops have shaded effect among the height of the present embodiment contrast display 500a and can cover the influence of external light equally, reduce leakage current for transistor 228.
Further; shown in Fig. 5 A; transistor 228 mainly is by grid 320, channel layer 330, source electrode 340 and drains 350 and constitute; channel layer 330 is positioned at grid 320 tops; source electrode 340 and draining 350 lays respectively on the channel layer 330 of grid 320 both sides tops, and pixel electrode 226 sees through the opening H of protective layer 310 and is electrically connected with drain electrode 350.In previous example, the light shield layer 230 of high contrast display 500a is to cover fully on the transistor 228, and in other words, light shield layer 230 covers source electrode 340 and 350 tops that drain equally.What deserves to be mentioned is, because producing the main generation zone of leakage current in the transistor 228 is channel layer 330, therefore light shield layer 230 of the present invention can also only be covered in channel layer 330 tops of transistor 228, in other words, in this kind application, light shield layer 230 can use with the mask manufacturing process with channel layer 330 and make, and with the manufacturing process compatibility height of transistor (TFT) array substrate 220, can additionally not increase the mask fabrication expense, and then save cost of manufacture.
In sum, high contrast display of the present invention has following advantage at least:
1. high contrast display of the present invention has the light shield layer that can cover extraneous light, and high contrast display therefore of the present invention can effectively be avoided leakage current in use.And under the comparatively strong environment of surround lighting, also effectively avoid data wire to produce the phenomenon of burning because of transistorized excessive leakage current, keep display quality.Moreover, because the light shield layer in the high contrast display of the present invention has the effect of shield lights, therefore also can improve the contrast of display.
2. the manufacturing process compatibility height of light shield layer of the present invention and active component array base board can directly be integrated in the manufacturing process of active component array base board, therefore can take into account lifting display quality and cost of manufacture and consider.
3. high contrast display of the present invention does not limit its applied scope, it can be applied in the electrophoretic display device (EPD) or in the display panels of various kinds, make display under the comparatively strong environment of surround lighting, also can avoid data wire to produce the phenomenon of burning, keep display quality because of transistorized excessive leakage current.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly knows this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim scope person of defining.
Claims (10)
1. array basal plate is characterized in that, described array base palte comprises:
One substrate; And the pixel of a plurality of arrayed on described substrate, wherein each pixel comprises:
One transistor;
One pixel electrode is electrically connected described transistor; And
One light shield layer is positioned on the described transistor.
2. array base palte as claimed in claim 1 is characterized in that, described light shield layer is between described pixel electrode and described transistor.
3. a display is characterized in that, described display comprises:
One first substrate;
One transistor (TFT) array substrate, the described relatively first substrate setting;
One first electrode is positioned at the one side of described first real estate to described transistor (TFT) array substrate;
A plurality of display mediums are arranged between described first substrate and the described transistor (TFT) array substrate;
Described transistor (TFT) array substrate comprises one second substrate; The pixel of a plurality of arrayed on described second substrate, wherein each pixel comprises:
One transistor;
One pixel electrode is electrically connected described transistor, and wherein display medium is between described first electrode and described pixel electrode; And
One light shield layer is between described display medium and described transistor.
4. display as claimed in claim 3 is characterized in that, described display medium be cholesterol liquid crystal and high polymer dispersed liquid crystal one of them.
5. display as claimed in claim 3 is characterized in that, described display further comprises a transparent partition wall, is positioned on described first electrode, to define a plurality of micro-cell structures on described first electrode; Described a plurality of display medium fills in respectively in each described micro-cell structure, and has a plurality of toners in each display medium.
6. display as claimed in claim 5 is characterized in that described display further comprises an overcoat, is positioned on described first substrate, and described overcoat covers described transparent partition wall; One adhesion coating is between described first substrate and described transistor (TFT) array substrate.
7. display as claimed in claim 3 is characterized in that described light shield layer comprises the black dielectric layer.
8. display as claimed in claim 3 is characterized in that, described light shield layer is between described pixel electrode and described transistor.
9. display as claimed in claim 3, it is characterized in that, each described transistor comprises a grid, a channel layer, one source pole and a drain electrode, wherein said channel layer is positioned at described grid top, described source electrode and described drain electrode lay respectively on the described channel layer of top, grid both sides, and wherein said light shield layer only is positioned at described channel layer top.
10. display as claimed in claim 3 is characterized in that, one of them is bendable substrate for described first substrate and second substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910207141XA CN102054831A (en) | 2009-10-27 | 2009-10-27 | Array substrate and display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910207141XA CN102054831A (en) | 2009-10-27 | 2009-10-27 | Array substrate and display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102054831A true CN102054831A (en) | 2011-05-11 |
Family
ID=43958998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910207141XA Pending CN102054831A (en) | 2009-10-27 | 2009-10-27 | Array substrate and display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102054831A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304622A (en) * | 2014-07-14 | 2016-02-03 | 元太科技工业股份有限公司 | Circuit protection structure and display device with same |
| CN110928092A (en) * | 2019-12-13 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and preparation method thereof |
-
2009
- 2009-10-27 CN CN200910207141XA patent/CN102054831A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304622A (en) * | 2014-07-14 | 2016-02-03 | 元太科技工业股份有限公司 | Circuit protection structure and display device with same |
| US10020326B2 (en) | 2014-07-14 | 2018-07-10 | E Ink Holdings Inc. | Circuit protection structure and display device having the same |
| CN110928092A (en) * | 2019-12-13 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104335111B (en) | Liquid crystal indicator | |
| CN104914602B (en) | Display device and array substrate | |
| CN102236229B (en) | Array substrate for in-plane switching mode liquid crystal display device | |
| US8553182B2 (en) | Liquid crystal display device including a light-blocking member | |
| US9798171B2 (en) | Liquid crystal panel, method for manufacturing the same and display device | |
| CN104461161A (en) | Touch substrate and touch device | |
| TW200424661A (en) | Electro-optic device and electronic equipment | |
| TWM503591U (en) | Display panel | |
| CN102566135A (en) | Display device | |
| CN104880852A (en) | Array substrate, preparation method of array substrate, display panel and display device | |
| CN102402094A (en) | Electrophoretic display device, driving method of electrophoretic display device, and electronic apparatus | |
| CN103257489B (en) | Active device substrate and the display panel applying it | |
| TWI344133B (en) | Thin film transistor array substrate and electronic ink display device | |
| CN104330917A (en) | Colorful film substrate and display device | |
| CN209514264U (en) | A kind of display panel and display device | |
| CN106019738A (en) | Electro-optical apparatus and electronic apparatus | |
| CN106501987A (en) | Display device | |
| CN103424925A (en) | Array substrate and manufacturing method thereof, and display device | |
| TWI401495B (en) | Display panel | |
| CN206258658U (en) | A kind of tft array substrate and semi-transparent semi-reflecting liquid crystal display | |
| JP2007047495A (en) | Reflective display device and method for manufacturing reflective display device | |
| TWI685697B (en) | Display device | |
| CN104570456A (en) | Liquid crystal display | |
| CN204440346U (en) | Touch base plate and contactor control device | |
| CN110058469A (en) | Array substrate, display panel, display device and array substrate manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110511 |