CN102054074B - Method and system for correcting photoetching hot spots in rear winding arrangement - Google Patents
Method and system for correcting photoetching hot spots in rear winding arrangement Download PDFInfo
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- CN102054074B CN102054074B CN200910211373.2A CN200910211373A CN102054074B CN 102054074 B CN102054074 B CN 102054074B CN 200910211373 A CN200910211373 A CN 200910211373A CN 102054074 B CN102054074 B CN 102054074B
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Abstract
The invention relates to a method and a device for correcting photoetching hot spots in rear winding arrangement, which are used for correcting photoetching hot spots detected in rear winding arrangement. At least one two-dimensional pattern with changeable size or position is selected from the local region of each hot point in a plurality of hot spots are and adjusted, so that the intensity simulated values of space images of all local regions are optimized to solve problems caused by each hot spot. After the size or position of the two-dimensional pattern is adjusted by a certain value, the space image intensity of the local regions in which the hot spots are distributed can be calculated according to one group of provided optical simulation model units about the space image intensity, and the changed two-dimensional pattern is combined by a plurality of units selected from the simulation model units.
Description
Technical field
The invention relates to method for correcting and the system of the lithographic hotspots of rear coiling (routing) layout (layout), particularly improve method and the system thereof of lithographic hotspots about the optical strength using simulation lithographic hotspots place regional area.
Background technology
The manufacturing technology of integrated circuit (IC) constantly progress makes the minimum dimension of IC chip also decline always.So reduce in the physical Design (physical design) of chip size trend in this, more need to consider manufacturing capacity (manufacturability) cause the impact of qualification rate and fiduciary level.Especially when nanoscale advanced process imports, the problem of many qualification rates and fiduciary level is attributable to some layout pattern and causes, and what maybe can claim is processing procedure focus (process-hotspots) or focus.These patterns are held to the impact of process conditions very much again, such as: the variation of stress and lithographic process, and produce the various defects (open circuit or short circuit) in layout.Therefore need to identify these patterns, even these patterns are modified to the pattern helping qualification rate and promote.
Recently the main cause causing qualification rate not easily to promote is the significantly increase of focus quantity in lithographic process, and it is contracted to below 65nm when technology node (technology nodes), the problem that the complicacy because of topological design increases and produces.Although can in resolution enhancement techniques (resolution enhancementtechnology) and optical proximity correction (Optical Proximity Correction; OPC) problem of these lithographic hotspots of phase process (lithography hotspots), and revise the line design at lithographic hotspots place and make moderate progress.But need a large amount of computer calculate in this stage, and the variable amplitude of line design is obviously not enough, that is lithographic hotspots also cannot be eliminated by optical proximity correction completely.If can in design cycle stage more early consider then more to contribute to the existence of lithographic hotspots the efficiency promoting global design, and guarantee the solution of hot issue.
Generally speaking, the design standards that current layout designer can use wafer fabrication to provide goes for out the existence of lithographic hotspots, such as: litho-rule checking (lithography rule check), and the line design can revising lithographic hotspots place to meet the requirement of this standard.But, this merely according to standard detection and the method revising focus, be easy to the error-detecting producing focus.The problem of this error-detecting is day by day serious along with the quantity increase of design standards, and especially when IC design is the processing procedure adopting below 65nm, this problem is serious especially.
As in aforementioned conventional corrigendum configuration, the method for lithographic hotspots is many after the optical proximity correction stage, but because need to spend the much time just can complete the adjustment of the process conditions (recipe) of optical proximity correction, and the elasticity that circuit can be revised is little.Therefore can shift to an earlier date when other stage more early, such as: the coiling stage, consider the effect of optical lithography in the lump, then can improve the difficulty that classic method meets with.
Have a kind of method based on pattern coupling (pattern-matching based) at present, it is for solving the method for correcting that in configuration, lithographic hotspots exists after the coiling stage.Because the method adopts pattern coupling, therefore need to set up a lot of data type schema storehouse.But limit cannot likely cause the pattern of lithographic hotspots, therefore can only revise for the limited lithographic hotspots that can identify, its result is that really to there is the ratio that is corrected of focus too low in fact at all.Moreover this data type schema storehouse not only takies a large amount of storage areas, and need for various different patterns checking and experiment, therefore the much time can be expended.Obvious this detection the technology type revising focus are like revising to manually, and its institute uses and limitedly do not consider that again the corrigendum tutorial message (correction guidance information) of design standards can experience repeatedly mistake and correct (trial and error) and just can have slightly good result.In fact, also cannot reach quick and a high proportion of focus effectively corrects result to this technology, that is circuit designers is difficult to the method for this very labor's demand of successful execution within the limited time really.
Therefore, electric design automation (Electronic Design Automation) industry needs one automatic and efficient lithographic hotspots method for correcting, for solving the problem that current circuit design meets with.
Summary of the invention
The object of the invention is in the layout after coiling, the lithographic hotspots found to be eliminated, thus promote the execution efficiency of qualification rate, reliability and the electric design automation that IC designs.
According to the method for correcting of the lithographic hotspots of the rear winding placement of an embodiment, comprise step as follows: the photoetching inspection accepting the rear winding placement of a chip obtains the data of several focuses; Choose at least one two-dimensional pattern that can change physical dimension or position in regional area for each place in this some focus, and define this physical dimension or position shift gears as several changing patteries; According to each knots modification in allowed band in this some changing pattern, sequentially choose several model units to be synthesized into corresponding aerial image intensity from the optical simulation model unit of one group of aerial image intensity; According to several calculated values aforementioned of this aerial image intensity to determine in this some changing pattern that each is to should the optimal varied amount of focus; Changing pattern and the optimal varied amount thereof of one group of the best should be obtained respectively by this two-dimensional pattern of each this regional area of place in some focuses.
The present embodiment separately comprises and should perform this two-dimensional pattern to organizing best changing pattern and the step of optimal varied amount thereof by the regional area at each place in some focuses.
The present embodiment separately comprises and to determine in this some changing pattern that each is to should after the variable quantity of focus, checks whether this changing pattern and optimal varied amount thereof violate the step that DRC (design rule check) or layout correspond to composition (layout versus schematic).
The method for correcting of the lithographic hotspots of the rear winding placement of another embodiment, comprises step as follows: the photoetching inspection accepting the rear winding placement of a chip obtains the data of several focuses; Choose at least one two-dimensional pattern that can change physical dimension or position in regional area for each place in this some focus, and define this physical dimension or position shift gears as several changing patteries; According to each alternation knots modification in allowed band in this some changing pattern, sequentially choose several model units from the optical simulation model unit of one group of aerial image intensity and synthesize the two-dimensional pattern after this change in (superposition) mode that coincides, thus obtain the aerial image intensity that in this some changing pattern, the different knots modification of each are corresponding; According to several calculated values aforementioned of this aerial image intensity to determine in this some changing pattern that each is to should the optimal varied amount of focus; Changing pattern and the optimal varied amount thereof of one group of the best should be obtained respectively by this two-dimensional pattern of each this regional area of place in some focuses.
The aerial image intensity that in this some changing pattern of this two-dimensional pattern of the present embodiment, the different knots modification of each are corresponding is obtained by the following step: choose this changing pattern of this two-dimensional pattern and set a knots modification; In this group optical simulation model unit, choosing several model unit, this chooses the two-dimensional pattern of the setting changing amount of changing pattern to coincide; According to the aforementioned result coincided to calculate the aerial image intensity of this focus relatively of two-dimensional pattern after this change; Sequentially this knots modification of alternation; When this alternation knots modification has reached this allowed band, then confirm the calculating of the aerial image intensity of each knots modification of this changing pattern of this two-dimensional pattern.
The more positive system of the lithographic hotspots of the rear winding placement of another embodiment, comprises: a focus testing fixture, and the photoetching inspection accepting the rear winding placement of a chip obtains the data of several focuses; One pattern selecting device, chooses at least one two-dimensional pattern that can change physical dimension or position in the regional area for each place in this some focus, and define this physical dimension or position shift gears as several changing patteries; One Strength co-mputation device comprises a model synthesis unit and a Strength co-mputation unit, this model synthesis unit is controlled oneself to provide in one group of optical simulation model unit and is chosen several model unit this chooses the two-dimensional pattern of the setting changing amount of changing pattern to coincide, again this Strength co-mputation unit according to the aforementioned result coincided to calculate the aerial image intensity of this focus relatively of two-dimensional pattern after this change; One comparison means, according to several calculated values aforementioned of this aerial image intensity to determine in this some changing pattern that each is to should the optimal varied amount of focus; And a more equipment, changing pattern and the optimal varied amount thereof of one group of the best should be obtained respectively by this at least one two-dimensional pattern of each this regional area of place in some focuses, and perform changing pattern and the optimal varied amount thereof of this group the best of this at least one two-dimensional pattern respectively.
The method for correcting of the lithographic hotspots of rear winding placement of the present invention and device can automatic and efficient lithographic hotspots corrigendums, in layout after coiling, the lithographic hotspots found is eliminated, thus promote the qualification rate of IC design, the execution efficiency of reliability and electric design automation, and calculate also more simply therefore integral operation efficiency can be promoted again.
Accompanying drawing explanation
Fig. 1 is lithographic hotspots in the rear winding placement in display one local;
Fig. 2 is the method for correcting process flow diagram of the lithographic hotspots of rear winding placement according to one embodiment of the invention;
Fig. 3 is the key diagram according to the focus of one embodiment of the invention and contiguous changeable two-dimensional pattern thereof;
Fig. 4 A ~ 4B is the schematic diagram of the cutting amendment of correction action;
Fig. 5 is the Establishing process figure of the optical simulation model unit group of aerial image intensity according to one embodiment of the invention;
Fig. 6 A ~ 6D is the key diagram of the optical simulation model unit of the aerial image intensity setting up basic geometry pattern;
Fig. 7 is the calculation flow chart of the aerial image intensity value that the different knots modification of a changing pattern of two-dimensional pattern are according to an embodiment of the invention corresponding; And
Fig. 8 is the corrigendum system diagram of the lithographic hotspots of rear winding placement according to one embodiment of the invention.
Embodiment
The present invention is a kind of method for correcting and system thereof of lithographic hotspots of rear winding placement in the direction that this inquires into.In order to the present invention can be understood up hill and dale, by following description, detailed step and composition are proposed.Apparently, execution of the present invention be not defined in the technician of circuit design the specific details be familiar with.On the other hand, well-known composition or step are not described in details, to avoid the restriction causing the present invention unnecessary.Preferred embodiment of the present invention can be described in detail as follows, but except these are described in detail, the present invention can also be widely used in other embodiment, and scope of the present invention not circumscribed, it is as the criterion with claims afterwards.
Fig. 1 is lithographic hotspots in the rear winding placement in display one local.The outline line 11 of figure cathetus is original design, and arc-shaped plural contours line 12 is the different results obtained according to process conditions different in process margins (process window) simulation again.In addition, in figure, circle indicates the place area that part 13 is aforementioned lithographic hotspots.When process conditions morphs, the circuit in circle clearly narrows, and open circuit (open) even likely occurs.Even if circuit can not disconnect, electric current also can produce more heat by the circuit of this narrow, produces when using the problem just having fiduciary level after a period of time.
The object of the invention is in the layout after coiling, the lithographic hotspots found to be eliminated, thus promote the execution efficiency of qualification rate, reliability and the electric design automation that IC designs.Again these lithographic hotspots can adopt general business software instrument (such as: Synopsys Inc. sell Prime Yield) perform photoetching normalized checking (Lithography Compliance Checking; LCC) find out in rear winding placement, therefore do not repeat the discrimination method of focus at this herein.
Fig. 2 is the method for correcting process flow diagram of the lithographic hotspots of rear winding placement according to one embodiment of the invention.After the placement and coiling (placement and routing) step of electric design automation, deviser can obtain an IC layout, recycle above-mentioned Software tool execution photoetching inspection and just can find the hot spot data that may exist in circuit, as shown by step 201.This focus data of the present embodiment can be obtained by execution photoetching inspection, or directly accepts the input of hot spot data.
Then as shown in step 202, choose in the regional area for each place in this some focus and can change at least one polygon (polygon) of physical dimension or position or the circuit of two-dimensional pattern.In the present embodiment, the size of this regional area is the interior scope from about two spacing (pitch) in the center of this focus, and each spacing approximates 200nm again.
The two-dimensional pattern that can change physical dimension or position can be a circuit or hole.If circuit then may have following three kinds to shift gears: the longitudinal direction along circuit stretches or shrinks, stretch or shrink along the transverse direction of circuit or along the longitudinal direction of circuit or transverse direction displacement.If hole can move by any direction in principle, but above hole and the circuit that is connected respectively of below also need with mobile.But, if above-mentioned various shifting gears violates the regulation of DRC, then will be excluded or change local cutting (tailor) of violating part be revised.This section illustrates and the principle that only Examples section physical dimension or position change does not contain all possible situation.
As depicted at step 203, deviser can define the physical dimension of each two-dimensional pattern or shifting gears as several changing patteries of position according to aforesaid change principle.Then according to each knots modification in allowed band in this some changing pattern, such as: the displacement of single direction is 1 spacing to the maximum, sequentially knots modification is increased progressively in this allowed band, and choose unit in the optical simulation model unit of the one group of aerial image intensity provided to synthesize corresponding aerial image intensity, as indicated in step 204.
The optical simulation model unit of this group aerial image intensity sets up (step 210) in advance, and the flow process of Fig. 5 can be utilized to produce this group optical simulation model unit.The present embodiment step 204 is several model units in the optical simulation model unit choosing this group aerial image intensity, synthesizes the two-dimensional pattern after this change with this several model unit, and synthesizes the aerial image intensity that result calculates focus place accordingly.
When each knots modification in allowed band in this some changing pattern to check against mimetic design rule or layout corresponds to the regulation of composition, then the local line cutting for violations may be needed to revise to meet this regulation, as shown in step 220 and 221.Otherwise, if do not violate this regulation, do not need amendment.The practical operation of this two step refers to Fig. 4 A ~ 4B and follow-up detailed description.
In this some changing pattern, each has different variable quantities in allowed band, therefore can produce the calculated value of several aerial image intensity according to the increase and decrease of variable quantity.Again according to several calculated values aforementioned of this aerial image intensity to determine in this some changing pattern that each is to should the optimal varied amount of focus, see step 205.So-called optimal varied amount refers to that the calculated value of the aerial image intensity of its correspondence offsets except focus has best impact, and likely this calculated value is maximum or minimum, depending on eliminating the direction required for each hot issue (short circuit or open circuit).
If in this some focus each place regional area in have several can change the two-dimensional pattern of physical dimension or position, then each two-dimensional pattern can find the optimal varied amount of various changing pattern according to the result of step 205.But the aerial image intensity calculated value comparing these optimal varied amounts therefrom can obtain again the changing pattern an of the best, and this step also can be described as correction action (fix action).Therefore, also just these two-dimensional patterns of each this regional area of place in this some focus can be obtained changing pattern and the optimal varied amount thereof of one group of the best respectively, as seen in step 222.That is two-dimensional pattern each in regional area is had to changing pattern and the optimal varied amount thereof of a best, the set of this best of breed or can be described as and revise guiding (fix guidence).This two-dimensional pattern should be performed to organizing best changing pattern and optimal varied amount thereof by the regional area at each place in some focuses again, therefore make the aerial image intensity calculated value of this focus area for best, that is the problem of each can be eliminated, as shown in step 223 in this some focus.
Fig. 3 is the key diagram according to the focus of one embodiment of the invention and contiguous changeable two-dimensional pattern thereof.Point P is the central point of focus 31, and the length and width of the area of this focus 31 is respectively hy and hx.In figure, circuit 33 and 34 is immutable two-dimensional pattern; Circuit 32 is variable two-dimensional pattern again, and its length and width is respectively ly and lx, and central point is dx and dy from the component of the distance of a P.In the present embodiment, this circuit 32 direction of arrow can move the maximum variable quantity of an x in the past, was to represent that circuit 32 moves right the position after x with oblique line portion in figure.Several variable quantity x1, x2 etc. increased progressively can be further divided into according to maximum variable quantity and manufacture lattice point (manufacturing grid), wherein manufacturing lattice point is provide according to wafer fabrication, such as: the manufacture lattice point of the process technique of 65nm is 1-5nm.For the position of circuit 32 in different amount of movement, respectively to the area integral of focus 31 aerial image intensity calculated value.Calculated value when this calculated value does not move with circuit 32 compares can obtain a yield value (gain), can judge that optimal varied amount is how many by this intensity gain value.
Fig. 4 A ~ 4B is the schematic diagram of the cutting amendment of correction action (fix action).The area that in figure, circle indicates is the place of focus, when changeable two-dimensional pattern extends a variable quantity in the direction of the arrow to the right, the right-angled corner part of top can and rightmost circuit too close, thus violation DRC.Therefore, to the local line cutting amendment of corner to meet this regulation, such as, the variable quantity of this local line can be shifted out the scope (dashed lined box represents) violating DRC, as shown in Figure 4 B.
Fig. 5 is the Establishing process figure of the optical simulation model unit group of aerial image intensity according to one embodiment of the invention.First, need to set basic analog parameter, wherein this basic analog parameter comprises optical wavelength (wavelength), numerical aperture (numerical aperature) and coherence factor (coherence factor), as depicted at step 211.Identical setting value during optical proximity correction bypass (OPC-bypass) can be adopted to simulate, this optical wavelength is 120nm, this numerical aperture is 0.8 and this coherence factor σ center=0.825 and σ width=0.25.
See step 212, conforming Accumulation System Structure Calculation can be applied to obtain the Two dimensional Distribution numerical value of the aerial image intensity of several basic geometry patterns.This basic geometry pattern can be that one end is fixed and the strip pattern of the infinite extension of the other end, or two orthogonal borders are fixed and the rectangle of the another two infinite extensions in orthogonal border.The method of this conforming Accumulation System Structure Calculation can see Y.C.Pati, A.A.Ghazanfarian and R.F.Pease is in IEEE Trans.Semi.Mfg., vol.10 (1), pages 62-74, the paper " Fast optical and process proximity correction algorithms forintegrated circuit manufacturing " that the paper " Exploiting Structure in FastAerial Image Computation for IC Patterns " that Feb 1997 delivers and N.B.Cobb. deliver in PhD Dissertation.
The Two dimensional Distribution numerical value of this aerial image intensity is selected from the larger proper range of the graded of this aerial image intensity, according to the scope of about two spacing in the aforementioned center from this focus, add that the maximum knots modification of two-dimensional pattern is 1 spacing, and add that the safe range that two-dimensional pattern is positioned at border is 1 spacing, therefore the proper range of 8 × 8 spacing can be obtained.
Moreover, according to this Two dimensional Distribution numerical value region, each this Two dimensional Distribution numerical value is divided into several times numerical value group, as shown at step 213.Also the region segmentation this Two dimensional Distribution numerical value can being complied with 8 × 8 matrixes arrangements is 64 numerical value groups.As shown at step 214, with the curved surface of binary polynomial Function Fitting each numerical value group, this curved surface is also called time pre-image (sub-preimage), and not divided curved surface is then called pre-image (preimage) originally.Then the function coefficients storing this Two dimensional Distribution numerical value of each basic geometry pattern this aerial image intensity corresponding is each optical simulation model unit, that is the coefficient of fitting function storing each spatial image is to represent a complete aerial image intensity, as seen in step 215.
Fig. 6 A ~ 6B is the key diagram of the optical simulation model unit of the aerial image intensity setting up basic geometry pattern.Fig. 6 A is the pattern of the step type function of a two dimension, and the step type function of two dimension can be used to the circuit representing tool one fixed width, and its other end is infinite extension.The geometry pattern of the circuit that just can obtain different length under this width is subtracted each other by this step type function of two different stiff ends.
The basic calculating formula of aerial image intensity I is as follows:
Wherein
represent convolution algorithm (convolution operator); F represents mask transmission function (masktransmission function); K represents transmission function.The formula of the aerial image intensity of each point can be rewritten as follows according to formula (1):
Wherein φ
krepresentative feature function (eigenfunction), that is the kernel function of conforming Accumulation System structure (kernel function); α
krepresent the eigenwert (eigenvalue) of corresponding each fundamental function.The aerial image intensity value of certain area just can be obtained after Line Integral is performed again to formula (2).
The step type function of the two dimension of Fig. 6 A is f in formula (2), and the pattern of its two-dimensional projection is the basic geometry pattern alleged by the present embodiment.In Fig. 6 B, pattern is the pattern of the first kernel function again, and general calculating can use the 5th kernel function.The later kernel function impact of 5th kernel function is little, therefore can omit need not.Fig. 6 C is the result after the step type function of two dimension and the first kernel function convolution algorithm, that is the curved surface that the Two dimensional Distribution value obtaining an aerial image intensity produces.
Fig. 6 D is the secondary spatial image spatial image of Fig. 6 C being divided into the subregions (region area is 200nm × 200nm) such as 64.Curved surface with binary polynomial Function Fitting this spatial image of following formula (3):
I(x，y)≈a
k，0x
k+a
k-1，1x
k-1y
1+...+a
0，ky
k+a
k-1，0x
k-1+...+a
0，k-1y
k-1+...
+a
1，0x+a
0，1y+a
0，0(3)
Therefore by the fitting coefficient a of the binary polynomial function of stored each spatial image
i, jsimply place back formula (3) again, just can obtain the binary polynomial function that this is complete, also can obtain the Two dimensional Distribution value of this former spatial image.Store fitting coefficient a
i, jrequired storage space is much smaller than the storage space needed for other classic method, and the integral and calculating of binary polynomial function is also comparatively simple, therefore can promote integral operation efficiency again.
Fig. 7 is the calculation flow chart of the aerial image intensity value that the different knots modification of a changing pattern of two-dimensional pattern are according to an embodiment of the invention corresponding.As shown in step 2041, in this some focus each place regional area in may have at least one changeable two-dimensional pattern, choose a changing pattern of this two-dimensional pattern and set a knots modification.Such as: in Fig. 3, circuit 32 first moves the knots modification of a manufacture lattice point multiple toward the direction of arrow.Then according to described in step 2042, in this group optical simulation model unit, choose several model unit, then produce in this several model unit mode that coincides the two-dimensional pattern that this chooses the setting changing amount of changing pattern.Such as: circuit 32 can with the two-dimentional step type function of the different initial value of two tools (see Fig. 6 A; Width is consistent with circuit 32) subtract each other and obtain, that is this two initial value is the left side and the right of circuit 32, therefore also can subtract each other with the model of the aerial image intensity of analog approximation these two two-dimentional step type functions, thus obtain the emulation mode that circuit 32 causes the intensity distributions on optical lithography.Herein coincide be defined as different geometric scheme superposition together or deduct overlapping part.
Except using above-mentioned two-dimentional step type function to produce analog model unit, can also the similar step type function that rises suddenly of 1/4th planes to produce optics analog model unit, circuit 32 the step type function of 1/4th planes of three different initial points can coincide and obtain equally.This mode had more previously used two-dimentional step type function can reduce the storage of data volume.
As step 2044, then the knots modification of sequentially this changing pattern of this two-dimensional pattern of alternation, such as: in Fig. 3, circuit 32 first moves the knots modification of identical manufacture lattice point multiple again toward the direction of arrow.When alternation knots modification has reached this allowed band, such as: circuit 32 is accumulative to move right to maximum knots modification x, then confirmed the calculating of the aerial image intensity of each knots modification of this changing pattern of this two-dimensional pattern, as shown in step 2045 and 2046.If do not reach maximum knots modification x, then return step 2042 and perform the emulation of next knots modification and the calculating of aerial image intensity.
Fig. 8 is the corrigendum system diagram of the lithographic hotspots of rear winding placement according to one embodiment of the invention.More positive system 80 comprises focus testing fixture 81, pattern selecting device 82, Strength co-mputation device 83, model apparatus for establishing 84, comparison means 85 and more equipment 86.After focus testing fixture 81 inputs the data of winding placement after a chip, photoetching inspection will be performed and obtain the analysis data of several focuses.These analysis data can be transfused to pattern selecting device 82, then choose at least one two-dimensional pattern that can change physical dimension or position in the regional area for each place in this some focus, and the shifting gears as several changing patteries of this physical dimension or position can be defined.Strength co-mputation device 83 comprises again model synthesis unit 831 and a Strength co-mputation unit 832, wherein model synthesis unit 831 can be chosen several model unit according to pattern selecting device 82 this chooses the two-dimensional pattern of the setting changing amount of changing pattern to coincide in this group optical simulation model unit, again this Strength co-mputation unit 832 according to the aforementioned result coincided to calculate the aerial image intensity of this focus relatively of two-dimensional pattern after this change.This knots modification can in allowed band sequentially increasing or decreasing, therefore in this two-dimensional pattern, the aerial image intensity of each changing pattern of each in allowed band just can obtain.This group optical simulation model unit is produced by model apparatus for establishing 84.Comparison means 85 is several aerial image intensity values of comparison of aforementioned again, thus to determine in this some changing pattern that each is to should the optimal varied amount of focus.More equipment 86 should obtain and perform the changing pattern of one group of the best and the optimal varied amount of each this optimal varied pattern, the corrigendum of the lithographic hotspots of winding placement after so just completing by this at least one two-dimensional pattern of each this regional area of place in some focuses respectively.
Technology contents of the present invention and technical characterstic disclose as above, but the personage being familiar with the technology still may do all replacement and the modification that do not deviate from spirit of the present invention based on teaching of the present invention and announcement.Therefore, protection scope of the present invention should be not limited to those disclosed embodiments, and should comprise various do not deviate from replacement of the present invention and modification, and is contained by following application claims.
Claims (29)
1. a method for correcting for the lithographic hotspots of winding placement after, it comprises:
Use the data of several focuses obtained by the photoetching inspection of the rear winding placement of chip, choose at least one two-dimensional pattern that can change physical dimension or position in regional area for each place in this some focus, and define this physical dimension or position shift gears as several changing patteries;
According to each knots modification in allowed band in this some changing pattern, sequentially choose several model units to be synthesized into corresponding aerial image intensity from the optical simulation model unit of one group of aerial image intensity;
According to several aerial image intensity values of the aerial image intensity of this correspondence to determine that each changing pattern in this some changing pattern corresponds to the optimal varied amount of focus; And
The optimal varied amount of one group of optimal varied pattern and each optimal varied pattern should be obtained respectively by this regional area at each place in some focuses.
2. method for correcting according to claim 1, it is included in the regional area at each place in this some focus the optimal varied amount performing this group optimal varied pattern and each this optimal varied pattern further.
3. method for correcting according to claim 1, it comprises further and to determine in this some changing pattern that each is to after the optimal varied amount of focus, checking whether optimal varied pattern and optimal varied amount thereof violate DRC or layout corresponds to composition.
4. method for correcting according to claim 3, wherein when violating this DRC or this layout and corresponding to composition, described method comprises this changing pattern of amendment and optimal varied amount thereof further to meet the regulation that this DRC or this layout correspond to composition.
5. method for correcting according to claim 4, wherein revise this changing pattern to comprise to change and violate this DRC or this layout and correspond to the part physical dimension of this two-dimensional pattern of composition or some locations to meet this regulation, and the variable quantity of this part physical dimension or some locations is different from this optimal varied amount.
6. method for correcting according to claim 1, wherein changes this physical dimension and comprises spread length, contracted length, width is broadened and makes narrowed width.
7. method for correcting according to claim 1, wherein changes this position and comprises and change this position along longitudinal direction and/or transverse direction.
8. method for correcting according to claim 5, wherein in this two-dimensional pattern, the optimal varied pattern of each is the comparison to this some changing pattern, to the optimal varied amount of focus being better than the optimal varied amount of the changing pattern that other is not selected.
9. a method for correcting for the lithographic hotspots of winding placement after, it contains:
Use the data of several focuses obtained by the photoetching inspection of the rear winding placement of chip, choose at least one two-dimensional pattern that can change physical dimension or position in regional area for each place in this some focus, and define this physical dimension or position shift gears as several changing patteries;
According to each knots modification in allowed band in this some changing pattern, sequentially choose several model units from the optical simulation model unit of one group of aerial image intensity and synthesize the two-dimensional pattern after change in the mode of coinciding, thus obtain the aerial image intensity that in this some changing pattern, the knots modification of each is corresponding;
According to corresponding to several aerial image intensity values of this aerial image intensity to determine that in this some changing pattern, each changing pattern corresponds to the optimal varied amount of focus; And
The changing pattern of one group of the best and the optimal varied amount of each optimal varied pattern should be obtained respectively by this regional area at each place in some focuses.
10. method for correcting according to claim 9, wherein obtains this aerial image intensity and comprises:
Choose this changing pattern of this two-dimensional pattern and set a knots modification;
In this group optical simulation model unit, choosing several model unit, this chooses the two-dimensional pattern of the setting changing amount of changing pattern to coincide;
According to this result coincided to calculate the aerial image intensity of this focus relatively of two-dimensional pattern after this change;
Sequentially this knots modification of alternation; And
When this knots modification reaches allowed band, then confirm the calculating of the aerial image intensity of each knots modification of this changing pattern of this two-dimensional pattern.
11. method for correctings according to claim 10, wherein choosing this several model unit is by by mutual for different geometric scheme superposition together or deduct the part of the overlapping in described different geometric scheme and obtain the two-dimensional pattern that this chooses the setting changing amount of changing pattern.
12. method for correctings according to claim 9, wherein this optical simulation model unit is the result of the aerial image intensity of the two-dimentional step type function of the different initial value of emulation and different in width.
13. method for correctings according to claim 9, wherein this optical simulation model unit is the result that emulation has the aerial image intensity of the discontinuous step type function jumped of 1/4th planes of different initial point.
14. method for correctings according to claim 9, the optical simulation model unit wherein setting up this group aerial image intensity comprises:
Set basic analog parameter;
Apply conforming Accumulation System Structure Calculation to obtain the Two dimensional Distribution numerical value of the aerial image intensity of several basic geometry patterns;
According to this Two dimensional Distribution numerical value region, each in this some Two dimensional Distribution numerical value is divided into several times numerical value group;
With each curved surface in this several times numerical value group of binary polynomial Function Fitting; And
Store the function coefficients of this Two dimensional Distribution numerical value of each this aerial image intensity corresponding in this some basic geometry pattern as each in this optical simulation model unit.
15. method for correctings according to claim 14, wherein this basic geometry pattern is that one end is fixed and the strip pattern of the infinite extension of the other end.
16. method for correctings according to claim 14, wherein this basic geometry pattern is that two orthogonal borders are fixed and the rectangle of the another two infinite extensions in orthogonal border.
17. method for correctings according to claim 14, wherein this basic analog parameter comprises optical wavelength, numerical aperture and coherence factor.
18. method for correctings according to claim 17, wherein this optical wavelength is 120nm, this numerical aperture is 0.8 and this coherence factor σ
center=0.825 and σ
width=0.25.
19. method for correctings according to claim 14, its regional area being included in each place in this some focus further performs changing pattern and the optimal varied amount thereof of this group the best.
20. method for correctings according to claim 14, it comprises further and to determine in this some changing pattern that each is to after the optimal varied amount of focus, checking whether this changing pattern and optimal varied amount thereof violate DRC or layout corresponds to composition.
21. method for correctings according to claim 20, wherein when violating this DRC or this layout and corresponding to composition, described method comprises this changing pattern of amendment and optimal varied amount thereof further to meet the regulation that this DRC or this layout correspond to composition.
22. method for correctings according to claim 21, wherein revise this changing pattern to comprise to change and violate this DRC or this layout and correspond to the part physical dimension of this two-dimensional pattern of composition or some locations to meet this regulation, and the variable quantity of this part physical dimension or some locations is different from this optimal varied amount.
23. method for correctings according to claim 14, wherein change this physical dimension and comprise spread length, contracted length, width is broadened and makes narrowed width.
24. method for correctings according to claim 14, wherein change this position and comprise and change this position along longitudinal direction and/or transverse direction.
25. method for correctings according to claim 24, wherein in this two-dimensional pattern, the optimal varied pattern of each refers to and compares this some changing pattern and select a kind of changing pattern, and it is to the optimal varied amount of focus being better than the optimal varied amount that other is not selected changing pattern.
The more positive system of the lithographic hotspots of winding placement after 26. 1 kinds, it comprises:
One focus testing fixture, the photoetching inspection accepting the rear winding placement of a chip obtains the data of several focuses;
One pattern selecting device, chooses at least one two-dimensional pattern that can change physical dimension or position in the regional area for each place in this some focus, and define this physical dimension or position shift gears as several changing patteries;
One Strength co-mputation device, according to each knots modification in allowed band in this some changing pattern, sequentially choose several model units from the optical simulation model unit of one group of aerial image intensity and synthesize the two-dimensional pattern after change in the mode of coinciding, thus obtain the aerial image intensity that in this some changing pattern, the different knots modification of each are corresponding;
One comparison means, according to these several aerial image intensity values to determine that in this some changing pattern, each changing pattern corresponds to the optimal varied amount of focus; And
One more equipment, should obtain and perform the changing pattern of one group of the best and the optimal varied amount of each optimal varied pattern by this at least one two-dimensional pattern of each this regional area of place in some focuses respectively.
27. more positive systems according to claim 26, wherein this Strength co-mputation device comprises a model synthesis unit and a Strength co-mputation unit, this model synthesis unit chooses several model unit in this group optical simulation model unit, and to coincide, this chooses the two-dimensional pattern of the setting changing amount of changing pattern, again this Strength co-mputation unit according to the aforementioned result coincided to calculate the aerial image intensity of this focus relatively of two-dimensional pattern after this change.
28. more positive systems according to claim 26, it comprises the model apparatus for establishing setting up this group optical simulation model unit further, this model apparatus for establishing is that acceptance one group sets basic analog parameter, and apply conforming Accumulation System Structure Calculation to obtain the Two dimensional Distribution numerical value of the aerial image intensity of several basic geometry patterns, each is split in this some Two dimensional Distribution numerical value for several numerical value group again according to this Two dimensional Distribution numerical value region, and respectively with each curved surface in this several times numerical value group of a binary polynomial Function Fitting, and the Function Fitting coefficient storing this Two dimensional Distribution numerical value of each this aerial image intensity corresponding in this some basic geometry pattern is each in this optical simulation model unit.
29. more positive systems according to claim 26, it comprises this changing pattern of an inspection and optimal varied amount thereof further and whether violates the coiling testing fixture that DRC or layout correspond to composition.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910211373.2A CN102054074B (en) | 2009-10-30 | 2009-10-30 | Method and system for correcting photoetching hot spots in rear winding arrangement |
| US13/503,748 US8732629B2 (en) | 2009-10-30 | 2010-10-28 | Method and system for lithography hotspot correction of a post-route layout |
| PCT/IB2010/002760 WO2011051791A2 (en) | 2009-10-30 | 2010-10-28 | Method and system for lithography hotspot correction of a post-route layout |
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| CN200910211373.2A CN102054074B (en) | 2009-10-30 | 2009-10-30 | Method and system for correcting photoetching hot spots in rear winding arrangement |
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| US8831333B2 (en) * | 2012-06-13 | 2014-09-09 | Nanya Technology Corporation | Mask pattern analysis apparatus and method for analyzing mask pattern |
| KR102359050B1 (en) | 2014-02-12 | 2022-02-08 | 에이에스엠엘 네델란즈 비.브이. | Method of optimizing a process window |
| CN106339519B (en) * | 2015-07-15 | 2019-10-11 | 中国科学院微电子研究所 | A kind of design method and system of dual domain |
| WO2018197144A1 (en) * | 2017-04-28 | 2018-11-01 | Asml Netherlands B.V. | Optimizing a sequence of processes for manufacturing of product units |
| CN114548020B (en) * | 2022-04-25 | 2022-07-08 | 成都复锦功率半导体技术发展有限公司 | Layout design method of multi-type chip, chip prepared by same and terminal |
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