CN102051677A - Method for growing graphene on large-diameter 6H-SiC carbon surface - Google Patents
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Abstract
The invention relates to a method for growing graphene on a large-diameter 6H-SiC carbon surface, which comprises the following steps: polishing and cleaning a 6H-SiC wafer carbon surface; horizontally placing the upward carbon surface in a graphite tray in a single crystal growth furnace crucible; vacuumizing until the vacuum degree is 1*10<-7>mbar; quickly heating to 1700-1750 DEG C; introducing high-purity argon gas; then slowly heating to 1750-1950 DEG C; and insulating for 1-10 minutes, thereby finishing the growth of the graphene. By the method provided by the invention, a substrate does not have a damaged layer, the grown graphene is distributed on the whole surface of the substrate, and the number of layers of the graphene can be controlled at 1 to 10. The method is simple and easy to operate and can be used for preparing high-quality graphene.
Description
Technical field
The present invention relates to the method for growth Graphene on a kind of major diameter 6H-SiC carbon face, belong to technical field of microelectronic material.
Background technology
Graphene is a kind of carbonaceous novel material by the tightly packed one-tenth bi-dimensional cellular of monolayer carbon atom shape crystalline network, have excellent electricity, calorifics and mechanical property, be expected to obtain widespread use, great application prospect all arranged in industry, power industry and electronic industry in fields such as high-performance nanometer electronic device, matrix material, field emmision material, gas sensor and energy storages.
Thermal conductivity reaches as high as 5000Wm under the grapheme material room temperature
-1K
-1The about 1.0TPa of Young's modulus under the room temperature, telescopic resilience reaches 20%, is the highest material of present intensity, can be used for developing making ultra light aircraft material thin as the scraps of paper and super tough and tensile flak jackets etc.Graphene is except firm unusually, or the outstanding material of present known conductive performance, and this makes it have huge application potential at microelectronic.Electronics transmits in the Graphene honey comb structure does not almost have virtual mass, and as the description of Dirac equation, current carrier does not have rest mass; Electronic wave in the Graphene are only propagated between one deck atomic shell; Even on the coarse substrate of atom level, electronics can not have scatter propagation in the submicron-scale scope yet in transmission course under the room temperature; Graphene also has very high electronic movement velocity, and its typical conduction velocity is 8x10
5M/s, carrier mobility can reach 200,000cm
2V
-1s
-1, in typical 100nm channel transistor, transmission only needs 0.1ps to current carrier in the source with between leaking, and therefore can be applicable to the ultra-high frequency device, becomes possibility for a kind of expansion HEMT frequency is provided to THz.On Graphene, can be separated by several nanometers of honeycomb screen electrode are placed, and raceway groove is shorter and transmit faster like this.Researchist even regard Graphene the substitute of silicon as can be used for producing following supercomputer.The performance of Graphene excellence makes it have important in theory researching value and wide application prospect.
The synthetic method of Graphene mainly contains: mechanical means and chemical dispersion method.
Chemical dispersion method be with graphite oxide and water with the mixed of 1mg/ml, to the clear no particulate material of solution, add an amount of hydrazine with ultra-sonic oscillation at 100 ℃ of backflow 24h, produce the black particle shape precipitation, filter, oven dry promptly gets Graphene.
Mechanical means comprises the method for micromechanics partition method, epitaxy method and heating SiC: (1) micromechanics partition method directly cuts down graphene platelet from bigger crystal.Novoselovt in 2004 etc. have prepared single-layer graphene in this way, and can be at stable existence under the external environment.The shortcoming of this method is that size is wayward, reliably the graphite flake sample of factory length foot supply usefulness.(2) the epitaxy method is to utilize growth matrix atomic structure " kind " to go out Graphene, at first allow carbon atom infiltrate ruthenium down at 1150 ℃, cooling then, after being cooled to 850 ℃, a large amount of carbon atoms of Xi Shouing will float to the ruthenium surface before, the carbon atom of the individual layer of lens shape " isolated island " has been covered with whole stromal surface, and finally they can grow up to a complete layer graphene.The graphene platelet that adopts this method to produce is in uneven thickness, and the bonding between Graphene and the matrix can influence the characteristic of carbon-coating.(3) heating SiC method is to remove Si by heating monocrystal SiC substrate, decomposites the Graphene lamella on monocrystalline (0001) face.Compare with additive method, the Graphene of growing on the SiC substrate surface has higher quality aspect a lot.Very flat of this material, its main pattern is by the step decision of following SiC substrate, and step width can reach nearly hundred microns at present.Fermi surface is very near the dirac point, is to have a kind of of desirable dirac electron character most in the Graphene of all methods preparations.The Graphene of growing on the SiC substrate can utilize traditional photoetching and micro-nano processing technology to carry out the etching of device or circuit on entire wafer, can directly utilize existing SiC production technique to realize scale operation, thereby important application prospects being arranged at micro-nano electron device and extensive integrated logic circuit field, the Graphene of the last growth of SiC is the material that is hopeful to replace crystalline silicon so far most.
Chinese patent file CN101602503A (CN200910023384.8) discloses the method for extending and growing graphene on the 4H-SiC silicon face, mainly utilize CVD stove extending and growing graphene on the 4H-SiC silicon face, logical hydrogen carries out the sample surfaces processing before the growth, and purpose is to remove surface scratch and affected layer.Grow under the 900mbar argon gas atmosphere, growth temperature is about 1600 ℃.Tang Jun etc. have reported the method for growth Graphene on the 6H-SiC silicon face, and the equipment of employing is molecular beam epitaxial device, after its method is the sample wet-cleaned, under the vacuum, earlier at 750 ℃ of deposit one deck silicon, is elevated to 1300 ℃ of extensions then and generates Graphene.Referring to Tang Jun etc., annealing time is to the influence of 6H-SiC (0001) surperficial epitaxial graphite alkene pattern and structure, Acta PhySico-Chimica Sinica, 2010,26 (1), 253-258.Present most epitaxy technique all carries out on silicon face, thus silicon face to need finishing polish be chemically machinery polished, the CMP (Chemical Mechanical Polishing) process of silicon face is relatively ripe at present.But before the growth Graphene, the carbon face needs chemically machinery polished on the carbon face, but the chemically machinery polished of carbon face is bigger than silicon face difficulty.In addition, Graphene is faster than the growth velocity on silicon face in the growth velocity of carbon face, and therefore the number of plies of growth Graphene is wayward on the carbon face.So do not appearing in the newspapers as yet up to now, through high growth temperature Graphene on the 6H-SiC carbon face of chemically machinery polished.But the look unfamiliar Graphene size of the relative silicon face of long Graphene growth of carbon is bigger, and can obtain higher carrier mobility, more helps it and uses and development at microelectronic.
Summary of the invention
At the deficiencies in the prior art, the invention provides a kind of on 6H-SiC carbon face the growth Graphene method, particularly major diameter 6H-SiC carbon face on the growth Graphene method.
Terminological interpretation:
I. major diameter 6H-SiC is a kind of monocrystalline crystal, and diameter is the 2-4 inch, and cutting back wafer size also is the 2-4 inch.The Graphene size of growing on this substrate also is the 2-4 inch.
The ii.6H-SiC substrate has two polar surface: silicon face (0001) face and carbon face (000-1) face, as shown in Figure 1.The present invention goes up the preparation Graphene at 6H-SiC carbon face (000-1).
Iii. high-purity argon gas, purity of argon is more than 99.995%, general merchandise high-purity argon gas purity is 99.995～99.999%.
Technical solution of the present invention is as follows:
A kind of method of the Graphene of growing on major diameter 6H-SiC carbon face comprises the steps:
1) be 6H-SiC wafer carbon mirror polish, the cleaning of 2-4 inch with diameter, make carbon face surfaceness less than 0.3nm, planeness is less than 5 μ m, and getting thickness is the 6H-SiC of 300 μ m-400 μ m.
2) the 6H-SiC wafer that step 1) is processed lies in the graphite pallet in the monocrystal growing furnace crucible, and carbon faces up.Monocrystal growing furnace suction to 1 * 10
-7Mbar, be rapidly heated to 1700-1750 ℃, temperature rise rate is 50-100 ℃/min, feed high-purity argon gas, flow is 1-10L/min, and pressure-controlling is at 800-900mbar, slowly be warming up to 1750-1950 ℃ then, temperature rise rate is 0.1-10 ℃/min, and insulation 1-10min finishes the growth of Graphene.
3) close argon gas, the logical hydrogen of big flow, hydrogen flowing quantity is 1-10L/min, pressure-controlling is at 800-900mbar, fast cooling to 1400 ℃, rate of temperature fall is 100-200 ℃/min.Close hydrogen and monocrystal growing furnace, stop heating, cool to room temperature naturally.
Take out the sample in the crucible pallet, be the 6H-SiC that top layer length has Graphene.The Graphene that present method grows is covered with the entire substrate surface, and by accurate controlled temperature and temperature rate, thereby the Graphene number of plies can be controlled in the 1-10 layer.Through following preferred growth step, the Graphene that obtains is best in quality.
Preferably, step 2) in, being rapidly heated to 1700 ℃, temperature rise rate is 100 ℃/min, feed high-purity argon gas, flow is 10L/min, and pressure-controlling slowly is warming up to 1750 ℃ then at 900mbar, temperature rise rate is 2 ℃/min, and insulation 5min finishes the growth of Graphene.
Preferably, in the step 3), the logical hydrogen of big flow, hydrogen flowing quantity is 10L/min, pressure-controlling is at 900mbar, fast cooling to 1400 ℃, rate of temperature fall is 200 ℃/min.Close hydrogen and monocrystal growing furnace, stop heating, cool to room temperature naturally.
Preferably, step 1) adopts chemical mechanical polishing method to 6H-SiC wafer carbon mirror polish, can process SiC carbon face smooth, the not damaged layer.
The invention provides following preferred chemical mechanical polishing method, be not limited only to this:
With granularity is the diadust of 2-10 μ m and oxygenant, dispersion agent by mass ratio 1: (0.01～0.5): (0.03～0.1) is mixed with the pH value is 1～5 polishing fluid, and the carbon face to the 6H-SiC wafer under 30～70 ℃ of conditions of polish temperature tentatively polishes.Select that the pH value is 1～5, concentration is that 2～50wt%, granularity are the nanometer burnishing liquid of 20～100nm for use, add an amount of oxygenant and be configured to chemical mechanical polishing liquid; Described nanometer burnishing liquid is selected from nano aluminium oxide polishing fluid, nano diamond polishing liquid, nano chromium oxide polishing fluid or nano-cerium oxide polishing fluid (market is on sale).Carbon face to the 6H-SiC wafer after the preliminary polishing under 20～60 ℃ of conditions of polish temperature carries out the nano level chemically machinery polished, adopts the soft polishing cloth of matter, and the pressure on the control wafer is at 100～500g/cm
2, polishing machine rotating speed 40-70rpm stops when wafer thickness reduces 1-5 μ m.The well-regulated atomic steps in surface.
6H-SiC wafer after the polishing cleans to remove residual particles and the pollutant on the carbon surface.
The used dispersion agent of polishing fluid preparation of preliminary polishing is water glass, Sodium hexametaphosphate 99, ammoniacal liquor, Sodium dodecylbenzene sulfonate, sulphosalicylic acid or trolamine, and used oxygenant is clorox, potassium permanganate, chromic oxide or other and the oxygenant that polishes the liquid phase compatibility.Use synthetic leather polishing cloth or non-woven fabrics polishing cloth.
The used oxygenant of chemical mechanical polishing liquid preparation is clorox, potassium permanganate, chromic oxide or other and the oxygenant that polishes the liquid phase compatibility, and its add-on is 1～60wt% of nanometer burnishing liquid.The soft polishing cloth of matter that adopts is a polyurethane polishing cloth.
All devices, raw material are known in the inventive method, and what be not particularly limited all can be with reference to prior art.
Atomic structure according to SiC carbon face, the present invention proposes under the hot conditions preparation method of extending and growing graphene on the major diameter 6H-SiC of not damaged layer substrate carbon face, this method has overcome the deficiency of prior art, simple, obtained finally that big area, the number of plies are few, the grapheme material of good uniformity.
Technical characterstic of the present invention and excellent results are:
The Graphene of on 6H-SiC carbon face, growing, the equipment that adopts is the High Temperature SiC monocrystal growing furnace, maximum heating temperature can reach 2500 ℃, 6H-SiC single crystal carbon face is through after cutting grinding and polishing processing, final through multistep chemically machinery polished, surperficial ultra-smooth, well-regulated atomic steps, surfaceness is less than 0.3nm, the not damaged layer.Need not logical hydrogen when therefore growing Graphene and remove surface damage layer.In addition, owing to be subjected to the restriction of type of heating, existing epitaxially grown CVD stove, molecular beam epitaxial device Heating temperature are low, and the Graphene sample size of generation is little, and therefore lack of homogeneity is difficult for that epitaxy goes out the high quality Graphene on the SiC substrate.The equipment High Temperature SiC monocrystal growing furnace that the present invention adopts improves Heating temperature greatly, and substrate not damaged layer, so this method is simple, and can prepare uniform high quality Graphene.The Graphene that present method grows is covered with the entire substrate surface, and by accurate controlled temperature and temperature rate, the Graphene number of plies can be controlled in the 1-10 layer.
The Graphene of the present invention's preparation is used to make optical Q-switch, and technology is simple, and cost is low, and can realize the adjusting of big wavelength region inner laser, helps industrialization production.
Description of drawings
Fig. 1 is 6H-SiC silicon face and carbon face atomic structure synoptic diagram.
Fig. 2 is the surface topography of the Graphene of embodiment 1 preparation.
Embodiment
The present invention will be further described below in conjunction with embodiment, but be not limited thereto.
Used monocrystal growing furnace is that German Linn High Therm GmbH makes among the embodiment, and model is IT-GRV-120/220/2300.
The 6H-SiC substrate that adopts, conduction type is a N type or semi-insulating, and the surface deflection is a forward, and the deflection error is within 0.2 degree, and diameter is the 2-4 inch, thickness 300 μ m-400 μ m, crystalline material institute of Shandong University provides.
Embodiment 1:
Preparation method of graphene on a kind of major diameter 6H-SiC carbon face comprises the steps:
1) with diameter be 3 inches 6H-SiC wafer carbon mirror polish, cleaning, make carbon face surfaceness less than 0.3nm, planeness is less than 5 μ m, thickness be the 6H-SiC of 350 μ m, surperficial well-regulated atomic steps.Wherein 6H-SiC wafer carbon mirror polish adopts cmp method, and step is as follows:
With granularity is the diadust (the permanent diadust factory far away in Zhecheng County, Henan Province produces) of 2 μ m, pressed mass ratio 1: 0.1: 0.03 with oxygenant clorox and dispersion agent water glass, be made into pH and be 5 polishing fluid, this polishing fluid good fluidity, suspension property be good, nontoxic, be beneficial to cleaning; Be put into after polishing fluid prepares in the polishing charging basket, drip on the polishing disk by peristaltic pump, the carbon face to the 6H-SiC wafer under 70 ℃ of conditions of polish temperature carries out mechanical polishing, the synthetic leather polishing cloth, and the pressure on the control wafer is at 100g/cm
2, polishing machine rotating speed 70rpm.Wafer thickness finishes when reducing by 10 μ m.Select again that the pH value is 5 for use, concentration is that 50wt%, granularity are the nano aluminium oxide polishing fluid (Longyan receive star superhard material Development Co., Ltd produce) of 80～100nm, add the hypochlorite oxidation agent, add-on is the 1wt% of nanometer burnishing liquid, is configured to chemical mechanical polishing liquid; Under 60 ℃ of conditions of polish temperature the wafer carbon face after the mechanical polishing is carried out the nano level chemically machinery polished, adopt polyurethane polishing cloth, the pressure on the control wafer is at 100g/cm
2, polishing machine rotating speed 70rpm.Wafer thickness finishes when removing 1 μ m.Wafer after the polishing cleans to remove residual particles and the pollutant on the carbon surface, and cleaning process adopts the RCA wet scrubbing method of standard in the technique for processing silicon chip
2) the 6H-SiC sample that processes is placed in the pallet of High Temperature SiC monocrystal growing furnace crucible, carbon faces up, suction to 1 * 10
-7Mbar, add power fast and be warming up to 1700 ℃, heating rate is 100 ℃/min, logical high-purity argon gas (purity is 99.999%), flow is 5L/min, pressure-controlling is at 900mbar, add power then at a slow speed and be warming up to 1750 ℃, heating rate is 2 ℃/min, behind the insulation 10min, finishes the growth of Graphene.Graphene is covered with the entire substrate surface.
3) close argon gas, the logical hydrogen of big flow, hydrogen flowing quantity is 10L/min, and pressure-controlling is at 900mbar, and fast cooling to 1400 is spent, and rate of temperature fall is 100 ℃/min.Close hydrogen and single crystal growing furnace intermediate frequency, stop heating, cool to room temperature naturally.Obtain grapheme material, number of plies 1-3 layer.
Embodiment 2:
Preparation method of graphene on a kind of major diameter 6H-SiC carbon face comprises the steps:
1) 6H-SiC wafer carbon mirror polish, cleaning are as embodiment 1.
2) the 6H-SiC sample that processes is placed in the pallet of high-temperature growth furnace crucible, carbon faces up, suction to 1 * 10
-7Mbar, add power fast and be warming up to 1750 ℃, heating rate is 80 ℃/min, logical high-purity argon gas (purity is 99.999%), flow is 10L/min, pressure-controlling is at 850mbar, add power then at a slow speed and be warming up to 1950 ℃, heating rate is 10 ℃/min, behind the insulation 1min, finishes the growth of Graphene.Graphene number of plies 5-7 layer, Graphene is covered with the entire substrate surface.
3) close argon gas, the logical hydrogen of big flow, hydrogen flowing quantity is 5L/min, and pressure-controlling is at 850mbar, and fast cooling to 1400 is spent, and rate of temperature fall is 150 ℃/min.Close hydrogen and single crystal growing furnace intermediate frequency, stop heating, cool to room temperature naturally.
Embodiment 3:
Preparation method of graphene on a kind of major diameter 6H-SiC carbon face comprises the steps:
1) 6H-SiC wafer carbon mirror polish, cleaning are as embodiment 1.
2) the 6H-SiC sample that processes is placed in the pallet of high-temperature growth furnace crucible suction to 1 * 10
-7Mbar, add power fast and be warming up to 1730 ℃, heating rate is 50 ℃/min, logical high-purity argon gas (purity is 99.999%), flow is 8L/min, pressure-controlling is at 880mbar, add power then at a slow speed and be warming up to 1900 ℃, heating rate is 5 ℃/min, behind the insulation 5min, finishes the growth of Graphene.Graphene number of plies 3-6 layer, Graphene is covered with the entire substrate surface.
3) close argon gas, the logical hydrogen of big flow, hydrogen flowing quantity is 8L/min, and pressure-controlling is at 880mbar, and fast cooling to 1400 is spent, and rate of temperature fall is 170 ℃/min.Close hydrogen and single crystal growing furnace intermediate frequency, stop heating, cool to room temperature naturally.
The Graphene performance test of embodiment 1-3 is listed in the table below in 1.
Table 1, Graphene performance test situation
The Raman test result shows that the grapheme material of embodiment 1-3 all has high crystalline quality.
Claims (4)
1. the method for growth Graphene on the 6H-SiC carbon face comprises the steps:
1) be 6H-SiC wafer carbon mirror polish, the cleaning of 2-4 inch with diameter, make carbon face surfaceness less than 0.3nm, planeness is less than 5 μ m, and getting thickness is the 6H-SiC of 300 μ m-400 μ m;
2) the 6H-SiC wafer that step 1) is processed lies in the graphite pallet in the monocrystal growing furnace crucible, and carbon faces up; Monocrystal growing furnace suction to 1 * 10
-7Mbar, be rapidly heated to 1700-1750 ℃, temperature rise rate is 50-100 ℃/min, feed high-purity argon gas, flow is 1-10L/min, and pressure-controlling is at 800-900mbar, slowly be warming up to 1750-1950 ℃ then, temperature rise rate is 0.1-10 ℃/min, and insulation 1-10min finishes the growth of Graphene;
3) close argon gas, the logical hydrogen of big flow, hydrogen flowing quantity is 1-10L/min, pressure-controlling is at 800-900mbar, fast cooling to 1400 ℃, rate of temperature fall is 100-200 ℃/min; Close hydrogen and monocrystal growing furnace, stop heating, cool to room temperature naturally.
2. the method for growth Graphene on the 6H-SiC carbon face as claimed in claim 1 is characterized in that step 1) adopts chemical mechanical polishing method to 6H-SiC wafer carbon mirror polish, and step is as follows:
With granularity is the diadust of 2-10 μ m and oxygenant, dispersion agent by mass ratio 1: (0.01～0.5): (0.03～0.1) is mixed with the pH value is 1～5 polishing fluid, and the carbon face to the 6H-SiC wafer under 30～70 ℃ of conditions of polish temperature tentatively polishes.Select that the pH value is 1～5, concentration is that 2～50wt%, granularity are the nanometer burnishing liquid of 20～100nm for use, add an amount of oxygenant and be configured to chemical mechanical polishing liquid; Described nanometer burnishing liquid is selected from nano aluminium oxide polishing fluid, nano diamond polishing liquid, nano chromium oxide polishing fluid or nano-cerium oxide polishing fluid; Carbon face to the 6H-SiC wafer after the preliminary polishing under 20～60 ℃ of conditions of polish temperature carries out the nano level chemically machinery polished, adopts the soft polishing cloth of matter, and the pressure on the control wafer is at 100～500g/cm
2, polishing machine rotating speed 40-70rpm stops when wafer thickness reduces 1-5 μ m.
3. the method for growth Graphene on the 6H-SiC carbon face as claimed in claim 1, it is characterized in that step 2) in processing condition be: be rapidly heated to 1700 ℃, temperature rise rate is 100 ℃/min, feed high-purity argon gas, flow is 300l/min, and pressure-controlling slowly is warming up to 1750 ℃ then at 900mbar, temperature rise rate is 0.5 ℃/min, insulation 2min.
4. the method for growth Graphene on the 6H-SiC carbon face as claimed in claim 1, it is characterized in that processing condition are in the step 3): hydrogen flowing quantity is 1000l/min, pressure-controlling is at 900mbar, fast cooling to 1400 ℃, rate of temperature fall is 200 ℃/min.
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| US9048092B2 (en) | 2012-01-03 | 2015-06-02 | Xidian University | Process for preparing graphene based on metal film-assisted annealing and the reaction with Cl2 |
| WO2013102360A1 (en) * | 2012-01-03 | 2013-07-11 | 西安电子科技大学 | Method for preparing graphene by reaction with cl2 based on annealing with assistant metal film |
| CN104404620A (en) * | 2014-12-01 | 2015-03-11 | 山东大学 | Method for simultaneously growing graphene on silicon surface and carbon surface of large-diameter 6H/4H-SiC |
| CN104404620B (en) * | 2014-12-01 | 2017-05-17 | 山东大学 | Method for simultaneously growing graphene on silicon surface and carbon surface of large-diameter 6H/4H-SiC |
| CN104695012B (en) * | 2015-03-24 | 2017-03-22 | 山东大学 | Device and method for preparing large-size high-quality graphene single crystal |
| CN104695012A (en) * | 2015-03-24 | 2015-06-10 | 山东大学 | Device and method for preparing large-size high-quality graphene single crystal |
| CN104835731A (en) * | 2015-05-05 | 2015-08-12 | 山东天岳晶体材料有限公司 | Quick polishing method for large-dimension 4H,6H-SiC wafer |
| CN104947184A (en) * | 2015-06-04 | 2015-09-30 | 山东大学 | Method for growing grapheme on epitaxy of large-diameter 4H/6H-SiC silicon surface substrate based on in-situ Si atmosphere action |
| CN105951179A (en) * | 2016-04-28 | 2016-09-21 | 山东大学 | Method for selectable single-side growth of graphene on SiC substrate |
| CN105951179B (en) * | 2016-04-28 | 2019-01-11 | 山东大学 | A kind of method of alternative single side growth graphene in SiC substrate |
| CN106521618A (en) * | 2016-11-07 | 2017-03-22 | 山东大学 | Method for located growing of big single crystal graphene on SiC substrate through point-seed way |
| CN106637393A (en) * | 2016-11-07 | 2017-05-10 | 山东大学 | Method for utilizing metal to assist epitaxial growth of graphene on 6H/4H-SiC carbon surface |
| CN106521618B (en) * | 2016-11-07 | 2018-10-26 | 山东大学 | A method of passing through a seed crystal located growth large-size monocrystal graphene on sic substrates |
| CN106637393B (en) * | 2016-11-07 | 2019-01-29 | 山东大学 | A method of utilizing metal auxiliary extending and growing graphene on 6H/4H-SiC carbon face |
| CN111199870A (en) * | 2018-11-20 | 2020-05-26 | 苏州纳维科技有限公司 | Method for epitaxial growth of aluminum nitride, aluminum nitride material and application |
| CN114197039A (en) * | 2021-12-09 | 2022-03-18 | 山东大学 | Method for epitaxially growing uniform graphene more than six inches on 4H-SiC substrate |
| CN115011255A (en) * | 2022-06-27 | 2022-09-06 | 中国地质大学（北京） | High-precision polishing agent of monocrystalline diamond added with nano metal and preparation method thereof |
| CN115849352A (en) * | 2023-02-27 | 2023-03-28 | 太原理工大学 | Method for efficiently preparing laminated graphene |
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