CN102033437A - Photoresist-removing method - Google Patents
Photoresist-removing method Download PDFInfo
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- CN102033437A CN102033437A CN2009101964268A CN200910196426A CN102033437A CN 102033437 A CN102033437 A CN 102033437A CN 2009101964268 A CN2009101964268 A CN 2009101964268A CN 200910196426 A CN200910196426 A CN 200910196426A CN 102033437 A CN102033437 A CN 102033437A
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Abstract
The invention discloses a photoresist-removing method, which comprises the following steps of: bombarding a photoresist-removing object by utilizing an O2 (oxygen) plasma and detecting a CO (carbon monoxide) product; stopping the bombardment of the photoresist-removing object by utilizing the O2 plasma when the decreased amount of CO reaches a preset value; and then bombarding the residue in the photoresist-removing object by utilizing a CO2 (carbon dioxide) plasma. The invention can effectively remove the photoresist of the photoresist-removing object, and can reduce the damage to low-k mediums.
Description
Technical field
The present invention relates to the semiconductor fabrication techniques field, be specifically related to the method for removing photoresist.
Background technology
Interconnection is meant by conductive material, electric signal is transferred to the different piece of chip as metal lines such as aluminium, polysilicon or copper.Metal wire is conducted signal in integrated circuit (IC, Integrated Circuit), and dielectric layer can guarantee that signal is not subjected to the influence of adjacent metal lines.Because the specific inductive capacity of insulating medium promptly, the k value is more little, and the electric coupling loss between adjacent wires is more little, and therefore, the medium of selecting low k value usually for use is as inter-level dielectric (ILD, InterLayer Dielectric).
After etching was finished, photoresist was die at silicon chip surface, needed to remove photoresist.The method of removing photoresist is divided into: plasma dry is removed photoresist and two kinds of wet-cleaned.Plasma dry is removed photoresist and is adopted oxygen (O usually
2) plasma, its principle is: the principal ingredient of photoresist is a hydrocarbon polymer, the O atom can generate volatile carbon monoxide (CO), carbon dioxide (CO with the photoresist reaction very soon
2) and main product such as water, thereby remove photoresist.
Because low k dielectric is soft and porous materials, therefore in the process of removing photoresist, it is easy to by O
2Corrode, cause the k value to raise, thereby make the electric coupling loss between adjacent wires increase, the velocity of propagation of signal is slack-off, and chip performance descends.
At present, adopt following three kinds of methods to reduce O usually
2The plasma dry damage of process of removing photoresist to low k dielectric:
One, reduces O
2Flow, with O
2Flow is reduced to 300～500sccm by common 1000～2000 ml/min (sccm).This method can not effectively reduce the damage to the k medium, therefore less being used.
Two, reduce the pressure that removes photoresist.Usually the pressure that removes photoresist that adopts is 100～200 millitorrs (mtor), and oxygen radical generally is reduced to 20～40mtor with pressure to the damage of low k dielectric under the high-pressure situations in order to reduce.But only adopt the lower pressure that removes photoresist, also have shortcoming: the one, the pump power of board needs enough just can bear greatly so low pressure, and gas flow need could be reduced to the pressure in the reaction chamber rapidly so low under bigger situation; The 2nd, the O of low pressure
2Failing to be convened for lack of a quorum makes the directivity bombardment of plasma strengthen, and causes the loss of low-k materials protective seam to a certain extent.
Three, reduce the temperature of removing photoresist.This method is used comparatively common.During the copper of traditional oxide film becomes, in order to pursue O
2The handling capacity of stream all adopts high temperature, and temperature is generally more than 250 degree.After low-k materials was widely used, the general at present temperature of removing photoresist with low-k materials was reduced to 25 degree, in the hope of reducing the damage to low k dielectric substantially.The shortcoming of doing like this is, the speed of removing photoresist is slow, and handling capacity is lower, influences production capacity.
In addition, because CO
2Can not cause damage, so prior art also can adopt 1 step low-pressure low discharge CO to low k dielectric
2Removing of photoresist by plasma method, but that the shortcoming of this method is a reaction rate is lower, the time is longer, and the bad control of particle environment of reaction chamber, relatively is easy to generate and is not easy the polycrystalline residue removed in a large number.If the k value of low k dielectric lower as: k＜2.4, in order more effectively to reduce the plasma damage of low k dielectric, may use nitrogen (N
2), hydrogen (H
2) wait gas, but the speed of removing photoresist of these gases is slower, the more difficult maintenance of reaction chamber environment.
Summary of the invention
The invention provides a kind of method of removing photoresist, with the minimizing damage of process of removing photoresist to low k dielectric.
Technical scheme of the present invention is achieved in that
A kind of method of removing photoresist, the object that removes photoresist are positioned at low k value inter-level dielectric top, and this method comprises:
Adopt oxygen O
2The plasma bombardment object that removes photoresist, and detect carbon monoxide CO product, when the slippage that detects CO reaches preset value, stop O
2The plasma bombardment process begins to adopt carbon dioxide CO
2The plasma bombardment object residue that removes photoresist.
Described detection CO product comprises:
Adopt light emission spectrum to detect the CO signal value, according to default sampling frequency the CO signal is taken a sample, when finding in the first default duration, the variation range of CO signal is in preset range the time, calculate the mean value of CO signal in this duration, this mean value as CO signal criterion value, is continued the CO signal is taken a sample, when the difference of finding CO signal criterion value and CO signal value in the second default duration during, determine that the slippage of CO reaches preset value all the time greater than preset value.
Described preset value is the product of CO signal criterion value and a, and wherein, the scope of a is 0.8～0.9.
Described employing O
2The plasma bombardment object that removes photoresist is:
The pressure in the etching reaction chamber of adopting is: 100～200 millitorr mtor, the source in etching reaction chamber is pressed and is: 200～500 watts of w, the bias voltage in etching reaction chamber is: 0～200w, O
2Flow be: 1000～2000 ml/min sccm.
Described employing CO
2The plasma bombardment object residue that removes photoresist is:
The pressure in the etching reaction chamber of adopting is: 20～50mtor, the source in etching reaction chamber is pressed and is: 200～500w, the bias voltage in etching reaction chamber is: 0～200w, CO
2Flow be: 300～500sccm, the reaction time is: 30～60 seconds.
The described object that removes photoresist is photoresist or organic antireflective coating.
Compared with prior art, the present invention both can effectively remove the object that removes photoresist, and had reduced the damage to low k dielectric simultaneously.
Description of drawings
The method flow diagram that removes photoresist that Fig. 1 provides for the embodiment of the invention;
Fig. 2 removes the synoptic diagram of bottom antireflective coating (BARC) for adopting the method for removing photoresist provided by the invention;
Fig. 3 removes the synoptic diagram of photoresist for adopting the method for removing photoresist provided by the invention;
Fig. 4-1 is after adopting the existing method of removing photoresist, the sectional view of the vertical view of compact district through hole, puffs through hole and compact district raceway groove, puffs raceway groove;
Fig. 4-2 is after adopting the method for removing photoresist provided by the invention, the sectional view of the vertical view of compact district through hole, puffs through hole and compact district raceway groove, puffs raceway groove;
Fig. 5-1 is after adopting the existing method of removing photoresist, the defective synoptic diagram on the wafer;
Fig. 5-2 is after adopting the method for removing photoresist provided by the invention, the defective synoptic diagram on the wafer;
Fig. 6 is after adopting existing remove photoresist method and the method for removing photoresist provided by the invention, the change in dielectric constant comparison diagram of low k dielectric.
Embodiment
The present invention is further described in more detail below in conjunction with drawings and the specific embodiments.
The method flow diagram that removes photoresist that Fig. 1 provides for the embodiment of the invention, wherein, the object that removes photoresist is positioned at low k value inter-level dielectric top, and as shown in Figure 1, its concrete steps are as follows:
Step 101: adopt O
2The plasma bombardment object that removes photoresist, and detect product in real time, when the slippage of the CO in the product reaches preset value, stop O
2The plasma bombardment process.
Can adopt light emission spectrum to detect the signal value of product, and for example: 5 times/second according to default sampling frequency, the CO signal is taken a sample, when find the first default duration as: in 3 seconds, the variation range of CO signal is in preset range the time, then determine the CO signal stabilization, calculate the mean value of CO signal in this duration, with this mean value as CO signal criterion value, after this, continue the CO signal is taken a sample, when find the second default duration as: when the difference of CO signal criterion value and CO signal value is all the time greater than preset value in 1 second, the object of determining to remove photoresist is removed substantially and is finished, and stops O
2The plasma bombardment process.Here, preset value is generally a*CO signal criterion value, wherein, and a=0.8～0.9.
In this step, the pressure in etching reaction chamber can be: 100～200mtor, the source pressure in etching reaction chamber is that the power (W27) of 27MHz can be: 200～500 watts (w), the bias voltage in etching reaction chamber are that the power of 2MHz (W2) can be: 0～200w, O
2Flow can be: 1000～2000 ml/min (sccm).
Step 102: adopt CO
2The plasma bombardment object residue that removes photoresist.
CO
2Can not cause damage to low k dielectric.
In this step, the pressure in etching reaction chamber can be: 20～50mtor, the source pressure in etching reaction chamber is that the power (W27) of 27MHz can be: 200～500w, the bias voltage in etching reaction chamber are that the power of 2MHz (W2) can be: 0～200w, CO
2Flow can be: 300～500sccm, the reaction time can be: 30～60 seconds (s).
Because the chemical constitution of organic antireflective coating (ARC, AntiReflective Coating) is similar to photoresist, therefore, the object that removes photoresist in embodiment illustrated in fig. 1 can be photoresist, also can be organic ARC.
From as can be seen embodiment illustrated in fig. 1, among the present invention, at first adopt O
2Plasma bombardment photoresist or organic ARC when detecting CO and obviously descend, stop O
2The plasma bombardment process begins to adopt CO
2The plasma bombardment object residue that removes photoresist.Because the principal ingredient of photoresist or organic ARC is a hydrocarbon polymer, the O atom can generate CO with the photoresist reaction very soon, when CO obviously descends, can determine that photoresist or organic ARC are removed substantially finishes, in order low k dielectric not to be caused damage, adopt CO for remaining a small amount of photoresist or ARC
2Plasma is removed.As seen, the embodiment of the invention can effectively be removed photoresist or organic ARC, simultaneously, has reduced the damage to low k dielectric.
Fig. 2 removes the synoptic diagram of bottom antireflective coating (BARC) for adopting the method for removing photoresist provided by the invention.
Fig. 3 removes the synoptic diagram of photoresist for adopting the method for removing photoresist provided by the invention.
Fig. 4-1 is after adopting the existing method of removing photoresist, the sectional view of the vertical view of compact district through hole, puffs through hole and compact district raceway groove, puffs raceway groove;
Fig. 4-2 is after adopting the method for removing photoresist provided by the invention, the sectional view of the vertical view of compact district through hole, puffs through hole and compact district raceway groove, puffs raceway groove.
From Fig. 4-1,4-2 as can be seen, compare with the existing method of removing photoresist, adopt the method for removing photoresist provided by the invention after, the defective on compact district through hole, puffs through hole, compact district raceway groove, the puffs raceway groove does not significantly increase.
Fig. 5-1 is after adopting the existing method of removing photoresist, the defective synoptic diagram on the wafer, and wherein, defective adds up to 23.
Fig. 5-2 is after adopting the method for removing photoresist provided by the invention, the defective synoptic diagram on the wafer, and wherein, defective adds up to 26.
From Fig. 5-1,5-2 also as can be seen, compare with the existing method of removing photoresist, adopt the method for removing photoresist provided by the invention after, the defective on the wafer does not significantly increase.
Fig. 6 is for after adopting existing remove photoresist method and the method for removing photoresist provided by the invention, the specific inductive capacity of low k dielectric (k value) changes comparison diagram, wherein, horizontal ordinate is 13 sampling spots on the low k dielectric, ordinate is the specific inductive capacity of low k dielectric, and the curve of top is after adopting the existing method of removing photoresist, the curve of the specific inductive capacity of low k dielectric, following curve is after adopting the method for removing photoresist provided by the invention, the curve of the specific inductive capacity of low k dielectric.Obviously, adopt the method for removing photoresist provided by the invention after, the specific inductive capacity of low k dielectric is starkly lower than the specific inductive capacity that adopts after the existing method of removing photoresist.
The above only is process of the present invention and method embodiment, in order to restriction the present invention, all any modifications of being made within the spirit and principles in the present invention, is not equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. method of removing photoresist, the object that removes photoresist are positioned at above the low k value inter-level dielectric, and this method comprises:
Adopt oxygen O
2The plasma bombardment object that removes photoresist, and detect carbon monoxide CO product, when the slippage that detects CO reaches preset value, stop O
2The plasma bombardment process begins to adopt carbon dioxide CO
2The plasma bombardment object residue that removes photoresist.
2. the method for claim 1 is characterized in that, described detection CO product comprises:
Adopt light emission spectrum to detect the CO signal value, according to default sampling frequency the CO signal is taken a sample, when finding in the first default duration, the variation range of CO signal is in preset range the time, calculate the mean value of CO signal in this duration, this mean value as CO signal criterion value, is continued the CO signal is taken a sample, when the difference of finding CO signal criterion value and CO signal value in the second default duration during, determine that the slippage of CO reaches preset value all the time greater than preset value.
3. method as claimed in claim 2 is characterized in that, described preset value is the product of CO signal criterion value and a, and wherein, the scope of a is 0.8～0.9.
4. the method for claim 1 is characterized in that, described employing O
2The plasma bombardment object that removes photoresist is:
The pressure in the etching reaction chamber of adopting is: 100～200 millitorr mtor, the source in etching reaction chamber is pressed and is: 200～500 watts of w, the bias voltage in etching reaction chamber is: 0～200w, O
2Flow be: 1000～2000 ml/min sccm.
5. the method for claim 1 is characterized in that, described employing CO
2The plasma bombardment object residue that removes photoresist is:
The pressure in the etching reaction chamber of adopting is: 20～50mtor, the source in etching reaction chamber is pressed and is: 200～500w, the bias voltage in etching reaction chamber is: 0～200w, CO
2Flow be: 300～500sccm, the reaction time is: 30～60 seconds.
6. as the arbitrary described method of claim 1 to 5, it is characterized in that the described object that removes photoresist is photoresist or organic antireflective coating.
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| CN200910196426A CN102033437B (en) | 2009-09-25 | 2009-09-25 | Photoresist-removing method |
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|---|---|---|---|
| CN200910196426A CN102033437B (en) | 2009-09-25 | 2009-09-25 | Photoresist-removing method |
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| CN102033437B CN102033437B (en) | 2012-09-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681242A (en) * | 2013-12-23 | 2014-03-26 | 无锡中微晶园电子有限公司 | Silicon substrate thick metal etching pretreatment process |
| CN109920729A (en) * | 2019-03-27 | 2019-06-21 | 合肥鑫晟光电科技有限公司 | A kind of preparation method of display base plate, display device |
| CN110854016A (en) * | 2019-11-25 | 2020-02-28 | 上海华力集成电路制造有限公司 | Photoresist stripping method |
| CN113589660A (en) * | 2021-05-07 | 2021-11-02 | 威科赛乐微电子股份有限公司 | Photoresist removing method for VCSEL chip after ICP etching |
| CN113805442A (en) * | 2021-09-14 | 2021-12-17 | 苏州长瑞光电有限公司 | Method for removing photoresist |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3129144B2 (en) * | 1995-04-21 | 2001-01-29 | 日本電気株式会社 | Ashing method |
| JP2006303063A (en) * | 2005-04-19 | 2006-11-02 | Elpida Memory Inc | Method of manufacturing semiconductor apparatus |
| CN1912749A (en) * | 2005-08-08 | 2007-02-14 | 联华电子股份有限公司 | Method for removing photoetching agent and method of regeneration photoetching agent |
| US7718542B2 (en) * | 2006-08-25 | 2010-05-18 | Lam Research Corporation | Low-k damage avoidance during bevel etch processing |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
| CN101329519A (en) * | 2007-06-18 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist and method for manufacturing mosaic structure |
| CN101504917B (en) * | 2008-05-27 | 2011-08-31 | 深圳深爱半导体有限公司 | Method for preventing secondary breakdown of VDMOS tube |
-
2009
- 2009-09-25 CN CN200910196426A patent/CN102033437B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681242A (en) * | 2013-12-23 | 2014-03-26 | 无锡中微晶园电子有限公司 | Silicon substrate thick metal etching pretreatment process |
| CN103681242B (en) * | 2013-12-23 | 2017-01-18 | 无锡中微晶园电子有限公司 | Silicon substrate thick metal etching pretreatment process |
| CN109920729A (en) * | 2019-03-27 | 2019-06-21 | 合肥鑫晟光电科技有限公司 | A kind of preparation method of display base plate, display device |
| CN109920729B (en) * | 2019-03-27 | 2022-12-02 | 合肥鑫晟光电科技有限公司 | Preparation method of display substrate and display device |
| CN110854016A (en) * | 2019-11-25 | 2020-02-28 | 上海华力集成电路制造有限公司 | Photoresist stripping method |
| CN113589660A (en) * | 2021-05-07 | 2021-11-02 | 威科赛乐微电子股份有限公司 | Photoresist removing method for VCSEL chip after ICP etching |
| CN113805442A (en) * | 2021-09-14 | 2021-12-17 | 苏州长瑞光电有限公司 | Method for removing photoresist |
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| CN102033437B (en) | 2012-09-26 |
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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