CN101504917B - Method for preventing secondary breakdown of VDMOS tube - Google Patents
Method for preventing secondary breakdown of VDMOS tube Download PDFInfo
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- CN101504917B CN101504917B CN 200810067461 CN200810067461A CN101504917B CN 101504917 B CN101504917 B CN 101504917B CN 200810067461 CN200810067461 CN 200810067461 CN 200810067461 A CN200810067461 A CN 200810067461A CN 101504917 B CN101504917 B CN 101504917B
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- vdmos
- photoresist
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- oxygen
- mask lithography
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Abstract
The invention discloses a method for preventing a VDMOS tube from secondary breakdown, which comprises the following steps: in the manufacturing process of the VDMOS tube, performing dry etching on the surface of a silicon chip by using a mask photoresist; and introducing gas in the process under a vacuum condition, wherein the gas forms plasmas which have bombardment capability to the mask photoresist under the action of radio frequency, and the plasmas are used to remove the mask photoresist. The method for preventing the VDMOS tube from the secondary breakdown can effectively solve the phenomenon of the second breakdown caused by the residue of the photoresist when the VDS of the VDMOS tube is tested under heavy current.
Description
[technical field]
The present invention relates to improve in the semiconductor applications VDMOS (Vertical conduction Doublediffused Metal Oxide Semiconductor, vertical conduction MOS metal-oxide-semiconductor) method of performance relates in particular to the method that a kind of VDMOS of preventing manages second breakdown.
[background technology]
VDMOS has obtained very using widely owing to have characteristics such as unique high input impedance, low driving power, high switching speed, superior frequency characteristic and low noise.Yet vdmos transistor second breakdown problem still can influence effective application of VDMOS.The transistor second breakdown be meant transistor from the little electric current of high voltage to low-voltage and high-current transition and be accompanied by the phenomenon of the hurried increase of electric current, second breakdown will cause the transistor permanent damage.Second breakdown mainly is owing to local overheating causes.Because defectiveness and parameter distribution are inhomogeneous on the transistorized knot face, cause CURRENT DISTRIBUTION inhomogeneous, thereby cause that temperature distributing disproportionation is even.The regional area carrier concentration that temperature is high will increase, and make more crypto set of electric current, and this vicious circle forms thermal instability.If the heat that regional area produced can not in time distribute, it is out of hand that electric current will be risen.In case temperature reaches material melting point, just cause permanent damage.
[summary of the invention]
The technical problem to be solved in the present invention provides the method for a kind of VDMOS of preventing pipe second breakdown, can effectively avoid the local overheating of VDMOS pipe, no longer occurs serious secondary-breakdown phenomenon when making the VDMOS pipe test VDS (drain-source voltage) under big electric current.
In order to solve the problems of the technologies described above, the present invention prevents the method for VDMOS pipe second breakdown, comprises the steps:
(1) in VDMOS pipe manufacturer process, adopt mask lithography glue to carry out dry etching at silicon chip surface;
(2) feed gas under vacuum condition, this gas forms the plasma that mask lithography glue is had the bombardment ability under action of radio, removes the mask lithography glue in source region with this plasma.
The gas of described step (2) comprises oxygen, and this oxygen flow is 1～10L/min, and preferred, described oxygen flow is 2.5L/min.
The vacuum degree of described step (2) is 0.5～10Torr, and preferred, described vacuum degree is 2Torr.
The power of the radio frequency of described step (2) is 500～1000W, and preferred, the power of described radio frequency is 1000W.
The present invention prevents the method for VDMOS pipe second breakdown, owing to after dry etch process, adopt plasma process to remove photoresist, the mask lithography glue that sex change the dry etching rear surface can have been taken place is removed clean, make on the knot face of vdmos transistor and do not have the defective that causes because of photoresist is residual, thereby make VDMOS pipe effectively avoid local overheating, and then under big electric current, no longer occur secondary-breakdown phenomenon during test VDS.
[embodiment]
The present invention is further detailed explanation below in conjunction with embodiment.
VDMOS pipe second breakdown problem has had a strong impact on effective application of VDMOS pipe, and causes that the reason of VDMOS pipe second breakdown is very complicated, and factors such as the material in the VDMOS pipe manufacturer process, technology all may cause the second breakdown of VDMOS pipe.Wherein, having the transistor local overheating that defective causes on the vdmos transistor knot face is the main cause that causes second breakdown.
The present invention finds that mask lithography glue is in the dry etching process, owing to surface modification takes place in the effect that is subjected to radio frequency and chemical corrosion, the superficial layer of sex change is just as the hard crust of one deck, adding the hydrogen peroxide wet method technology of removing photoresist with traditional sulfuric acid is difficult to remove the mask lithography glue of this sex change clean, cause the VDMOS source region to have photoetching glue residue, this residue makes on the knot face of vdmos transistor has defective, and then influence current characteristics, make CURRENT DISTRIBUTION inhomogeneous, cause VDMOS pipe local heating, second breakdown occurs when making the VDMOS pipe under big current conditions, test VDS, cause product rejection.Therefore, the present invention is in VDMOS pipe manufacturer process, and employing can be removed clean removing of photoresist by plasma technology with mask lithography glue.
The present invention prevents the method for VDMOS pipe second breakdown, comprises the steps:
(1) in VDMOS pipe manufacturer process, adopt mask lithography glue to carry out dry etching at silicon chip surface;
(2) feed gas under vacuum condition, this gas forms the plasma that mask lithography glue is had the bombardment ability under action of radio, removes mask lithography glue with this plasma.
The removing of photoresist by plasma technology of described step (2) is, in vacuum degree is under the condition of 0.5～10Torr, feed process gas oxygen, the flow of this aerating oxygen is 1～10L/min, described oxygen molecule is to resolve into oxygen atom under the action of radio of 500～1000W at power, and further ionization forms the oxonium ion of high oxidative capacity, this oxygen atom and oxonium ion have the bombardment ability under action of radio, and can react with carbon (C) and the hydrogen (H) in the photoresist, generate volatile carbon monoxide, main product such as carbon dioxide and water, these products are taken away by vacuum system.Because the basis of photoresist is hydrocarbon polymer, therefore the mask lithography glue removal that the double action of the ion bombardment by above-mentioned high energy and strong chemical reaction, removing of photoresist by plasma step of the present invention can the dry etching rear surface take place sex change totally.
In the removing of photoresist by plasma technology of step of the present invention (2), vacuum degree is 0.5～10Torr, because vacuum degree surpasses 10Torr, can make the gas overrich, the homogeneity that influence is removed photoresist, and then make the difficult quality control of removing photoresist, if vacuum degree is less than 0.5Torr, will make plasma density low excessively, and vaccum-pumping equipment also is difficult to vacuum degree is extracted into less than 0.5Torr, is preferably 2Torr through the described vacuum degree of experiment confirm repeatedly.Oxygen flow in the described step (2) is 1～10L/min, if oxygen flow is greater than 10L/min, the speed of removing photoresist is slowed down, and can increase production cost, if oxygen flow is less than 1L/min, because plasma density is too low, the speed of removing photoresist also can slow down, and is preferably 2.5L/min through the described oxygen flow of experiment confirm.The power of radio frequency is 500～1000W in the described step (2), if the power of radio frequency is lower than 500W, can influence the speed of removing photoresist, and present equipment does not also reach and produces the radio frequency that surpasses 1000W, is preferably 1000W through the power of the described radio frequency of experiment confirm.
Embodiment 1
In VDMOS pipe manufacturer process, adopt mask lithography glue to carry out dry etching at silicon chip surface, then, remove mask lithography glue with plasma, be under the condition of 2Torr promptly in vacuum degree, feed process gas oxygen, the flow of this aerating oxygen is 2.5L/min, described oxygen molecule is to resolve into oxygen atom under the action of radio of 1000w at power, and further ionization forms the oxonium ion of high oxidative capacity, this oxygen atom and oxonium ion have the bombardment ability under action of radio, and can react with carbon (C) and the hydrogen (H) in the photoresist, the double action of ion bombardment by high energy and strong chemical reaction, removing of photoresist by plasma step of the present invention can be removed mask lithography glue clean.
Embodiment 2
In VDMOS pipe manufacturer process, adopt mask lithography glue to carry out dry etching at silicon chip surface, then, remove mask lithography glue with plasma, be under the condition of 0.5Torr promptly in vacuum degree, feed process gas oxygen, the flow of this aerating oxygen is 10L/min, described oxygen molecule is to resolve into oxygen atom under the action of radio of 800w at power, and further ionization forms the oxonium ion of high oxidative capacity, this oxygen atom and oxonium ion have the bombardment ability under action of radio, and can react with carbon (C) and the hydrogen (H) in the photoresist, the double action of ion bombardment by high energy and strong chemical reaction, removing of photoresist by plasma step of the present invention can be removed mask lithography glue clean.
Embodiment 3
In VDMOS pipe manufacturer process, adopt mask lithography glue to carry out dry etching at silicon chip surface, then, remove mask lithography glue with plasma, be under the condition of 10Torr promptly in vacuum degree, feed process gas oxygen, the flow of this aerating oxygen is 1L/min, described oxygen molecule is to resolve into oxygen atom under the action of radio of 500w at power, and further ionization forms the oxonium ion of high oxidative capacity, this oxygen atom and oxonium ion have the bombardment ability under action of radio, and can react with carbon (C) and the hydrogen (H) in the photoresist, the double action of ion bombardment by high energy and strong chemical reaction, removing of photoresist by plasma step of the present invention can be removed mask lithography glue clean.
Press the VDMOS pipe that the foregoing description is made, compare, under big electric current, all do not occur second breakdown during test VDS with adopting the conventional wet technology VDMOS pipe of making that removes photoresist.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (8)
1. a method that prevents the second breakdown of VDMOS pipe is characterized in that, comprises the steps:
(1) in VDMOS pipe manufacturer process, adopt mask lithography glue to carry out dry etching at silicon chip surface;
(2) feed gas under vacuum condition, this gas forms the plasma that mask lithography glue is had the bombardment ability under action of radio, removes the mask lithography glue in source region with this plasma.
2. method according to claim 1 is characterized in that, the gas of described step (2) comprises oxygen.
3. method according to claim 2 is characterized in that, the flow of described oxygen is 1～10L/min.
4. method according to claim 3 is characterized in that, the flow of described oxygen is 2.5L/min.
5. method according to claim 1 is characterized in that, the vacuum degree of described step (2) is 0.5～10Torr.
6. method according to claim 5 is characterized in that, the vacuum degree of described step (2) is 2Torr.
7. method according to claim 1 is characterized in that, the power of the radio frequency of described step (2) is 500～1000W.
8. method according to claim 7 is characterized in that, the power of the radio frequency of described step (2) is 1000W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810067461 CN101504917B (en) | 2008-05-27 | 2008-05-27 | Method for preventing secondary breakdown of VDMOS tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810067461 CN101504917B (en) | 2008-05-27 | 2008-05-27 | Method for preventing secondary breakdown of VDMOS tube |
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| Publication Number | Publication Date |
|---|---|
| CN101504917A CN101504917A (en) | 2009-08-12 |
| CN101504917B true CN101504917B (en) | 2011-08-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810067461 Expired - Fee Related CN101504917B (en) | 2008-05-27 | 2008-05-27 | Method for preventing secondary breakdown of VDMOS tube |
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| Country | Link |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102033437B (en) * | 2009-09-25 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Photoresist-removing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1356719A (en) * | 2000-11-24 | 2002-07-03 | 三星电子株式会社 | Method for manufacturing contacts of semiconductor device |
| CN1450657A (en) * | 2003-05-15 | 2003-10-22 | 上海集成电路研发中心有限公司 | Vertical high-power field-effect transistor unit structure |
| CN1633701A (en) * | 2001-02-12 | 2005-06-29 | 兰姆研究有限公司 | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
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2008
- 2008-05-27 CN CN 200810067461 patent/CN101504917B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1356719A (en) * | 2000-11-24 | 2002-07-03 | 三星电子株式会社 | Method for manufacturing contacts of semiconductor device |
| CN1633701A (en) * | 2001-02-12 | 2005-06-29 | 兰姆研究有限公司 | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| CN1450657A (en) * | 2003-05-15 | 2003-10-22 | 上海集成电路研发中心有限公司 | Vertical high-power field-effect transistor unit structure |
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| CN101504917A (en) | 2009-08-12 |
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Address after: Baolong Baolong Industrial City seven road in Longgang District of Shenzhen City, Guangdong Province, No. 3 518118 Patentee after: Shenzhen Si Semiconductors Co., Ltd. Address before: 518029, 3 floor, building 2, three optical fiber street, Bagua Road, Shenzhen, Guangdong, Futian District Patentee before: Shenzhen SI Semiconductor Co., Ltd. |
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