CN102031498B - For substrate support seat, its reative cell and the technique processing method of III-V family film growth reative cell - Google Patents
For substrate support seat, its reative cell and the technique processing method of III-V family film growth reative cell Download PDFInfo
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Abstract
A kind of substrate support seat for III-V family film growth reative cell, comprise multiple substrate bearings region for placing some substrates and multiple gas guide holes or guide channel around described substrate bearing region division, described multiple gas guide hole or guide channel are communicated with an exhaust apparatus fluid of described reative cell, in thin film growth process processing procedure, the reacting gas of described reative cell flow through described multiple gas guide hole or guide channel, and discharge described reative cell by described exhaust apparatus, in the time that reacting gas is flowed through described gas guide hole or guide channel, described multiple substrate bearings region is separated mutually by described reacting gas. the reative cell and the III-V family thin film growth process processing method that use described substrate support seat are the present invention further provides.
Description
Technical field
The present invention relates to a kind of on substrate the device of deposit film, relate in particular to a kind of deposition on substrate of homogeneous film growth or reative cell, its technique processing method and substrate support seat thereof of epitaxial growth III-V family film realized.
Background technology
As the one in III-V family film, gallium nitride (GaN) is that one is widely used in manufacturing the transistorized material of blue light, purple light and white light-emitting diodes, ultraviolet detector and High-Power Microwave. Because GaN is applicable to have actual and potential purposes in the low energy consumption device (as, LED) of a large amount of purposes in manufacture, the growth of GaN film receives great concern.
III-V family film including GaN film can be grown in multiple different mode, comprises molecular beam epitaxy (MBE) method, hydride steam stage extension (HVPE) method, metallo-organic compound chemical vapour deposition (CVD) (MOCVD) method etc. At present, mocvd method is used to and produces LED and obtain the preferred deposition process of the film of enough quality.
MOCVD is the english abbreviation of metallo-organic compound chemical vapour deposition (CVD) (Metal-organicChemicalVaporDeposition). MOCVD technique conventionally has in reative cell under temperature controlled environment or reative cell and carries out at one. Conventionally, for example, for example, be passed in reative cell and react to form GaN film on substrate by the first precursor gases that comprises III-V family element (gallium (Ga)) and nitrogenous second precursor gases (ammonia (NH3)). One current-carrying gas (carriergas) also can be used to assist transport precursor gases to substrate top. These precursor gases are in heated substrate surface hybrid reaction, and then form III-V group-III nitride film (for example GaN film) and be deposited on substrate surface.
In order to improve the handling capacity (throughput) of production capacity and film growth apparatus, the size of the substrate support seat (substrateholder) in the reative cell of MOCVD process units is increasing, above it, be placed increasing substrate, for example, in a reative cell, can place the substrate of 42 2 inches or place the substrate of 11 4 inches, or placing the substrate of 66 inches. So setting no doubt can improve production capacity and productivity ratio, but can cause the inhomogeneous problem of deposited film. Along with quantity and the diameter of the substrate in a reative cell become increasing, this problem highlights all the more.
Fig. 1 is the reative cell 600 of a kind of MOCVD process units of prior art. On substrate support seat 400 in reative cell 600, place some substrate W1, W2. The below of reative cell 600 is provided with exhaust apparatus 800. In process treatment process, reacting gas is transported to the surface of substrate support seat 400 along path 900 from the top of reative cell 600, arrive again the outward flange (along path 902) of substrate support seat 400 along the surface of substrate support seat 400, be finally deflated device 800 along path 904 and discharge the inside of reative cell 600. Because speed, quality, the thickness homogeneity of the film growth of MOCVD process units are all subject to the impact in reacting gas transportation and path consumingly, can find out, in the time that the radius of substrate support seat 400 becomes increasing, the substrate quantity of holding on substrate support seat 400 is just more and more, it is more and more longer that path 902 will become, and is just more not easy to make the lip-deep all substrates at substrate support seat 400 to obtain thin film deposition equably.
Summary of the invention
For the problems referred to above in background technology, the invention provides reative cell, its substrate support seat and technique processing method thereof of a kind of III-V family film of growing on substrate, it can improve the homogeneity of thin film manufacture process widely.
According to an aspect of the present invention, the invention provides a kind of substrate support seat for III-V family film growth reative cell, it is characterized in that: described substrate support seat comprises one or more substrate bearings region for placing some substrates and multiple gas guide holes or guide channel around described substrate bearing region division, described multiple gas guide hole or guide channel are communicated with an exhaust apparatus fluid of described reative cell, in thin film growth process processing procedure, the reacting gas of described reative cell flow through described multiple gas guide hole or guide channel, and discharge described reative cell by described exhaust apparatus.
Wherein, in described each substrate bearing region, only place a slice substrate.
Wherein, in described each substrate bearing region, place at least two substrates.
Wherein, described multiple gas guide holes or the distribution of guide channel on described substrate support seat are at least two concentric circles relations, and the radial distance between adjacent two concentric circles can hold one or more pieces substrates.
Wherein, described substrate support seat is connected with a rotating mechanism, and in the process of substrate PROCESS FOR TREATMENT, described substrate support seat keeps rotation.
Wherein, described substrate support seat keeps static in the process of substrate PROCESS FOR TREATMENT.
Wherein, described substrate support seat is connected with an elevating mechanism, and its upper and lower height can be adjusted.
Wherein, the diameter of described multiple gas guide holes is identical.
Wherein, the diameter of described multiple gas guide holes is not identical.
Wherein, the width size of described multiple gas guide channels is identical.
Wherein, the width size of described multiple gas guide channels is not identical.
Wherein, described multiple substrate bearings region is distributed in the upper surface of described substrate support seat equably.
Wherein, the periphery in described substrate bearing region distributes equably and is provided with described multiple gas guide hole or guide channel.
Wherein, in described multiple gas guide hole or guide channel at least partly by two in described multiple substrate bearings region are shared.
According to a further aspect in the invention, the invention provides a kind of substrate support seat for III-V family film growth reative cell, it is characterized in that: on described substrate support seat, comprise the multiple substrate bearings region for placing some substrates and be arranged between described adjacent two substrate bearing regions, be used for adjacent two substrate bearing regions separated multiple gas guide holes or guide channel mutually, described multiple gas guide hole or guide channel are communicated with an exhaust apparatus fluid of described reative cell, in thin film growth process processing procedure, the reacting gas of described reative cell flow through described multiple gas guide hole or guide channel, and discharge described reative cell by described exhaust apparatus.
Wherein, in described multiple gas guide hole or guide channel at least partly by two in described multiple substrate bearings region are shared.
In accordance with a further aspect of the present invention, the invention provides a kind of III-V family film growth reative cell, it is characterized in that: described reative cell comprises foregoing any substrate support seat.
Wherein, described reative cell is a vertical response chamber, and described reacting gas vertically flows to the upper surface of described substrate support seat from the top of described substrate support seat.
Wherein, described reative cell is a horizontal reative cell, and described reacting gas is the upper surface through described substrate support seat from the top concurrent flow of described substrate support seat.
In accordance with a further aspect of the present invention, the invention provides a kind of technique processing method of the III-V family film of growing on substrate, comprising:
One reative cell is provided, described reative cell comprises reacting gas conveying device, substrate support seat, exhaust apparatus, on described substrate support seat, be separated multiple substrate bearings region and be arranged between described adjacent two substrate bearing regions, for by adjacent two substrate bearing regions separated multiple gas guide holes or guide channel mutually, described multiple gas guide holes or guide channel are communicated with an exhaust apparatus fluid of described reative cell;
Described substrate is carried out to thin film growth process processing, in described process treatment process, the reacting gas that described reacting gas conveying device provides flow through described multiple gas guide hole or guide channel, and discharge described reative cell by described exhaust apparatus, in the time that reacting gas is flowed through described gas guide hole or guide channel, described multiple substrate bearings region is separated mutually by described reacting gas.
Brief description of the drawings
Fig. 1 is a kind of reative cell 600 that is applicable to MOCVD explained hereafter of prior art;
Reative cell 1 and the substrate support seat 20 thereof of a kind of III-V family film of growing on substrate that Fig. 2 provides for a specific embodiment according to the present invention;
Fig. 3 is the schematic perspective view of substrate support seat 20 shown in Fig. 2, is wherein the substrate support seat 20 shown in Fig. 2 along hatching I-I gained sectional view;
The different embodiments of the substrate support seat that Fig. 4 to Figure 12 provides for different specific embodiment according to the present invention.
Wherein, same or analogous Reference numeral represents same or analogous device (module).
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is specifically described.
The invention provides a kind of reative cell and substrate support seat thereof that deposits III-V family film on substrate or substrate. This reative cell can be for depositing all kinds of III-V family film on substrate or on substrate, and reative cell of the present invention and substrate support seat goes for MOCVD method or HVPE method is carried out deposit film.
The reative cell that deposits III-V family film on substrate or on substrate provided by the present invention can be polytype reative cell, such as, be vertical response chamber, or horizontal reative cell etc. Content of the present invention is only described using vertical response chamber as example for simplicity's sake.
Reative cell 1 and the substrate support seat 20 thereof of a kind of III-V family film of growing on substrate that Fig. 2 provides for a specific embodiment according to the present invention. As shown in Figure 2, reative cell 1 is a kind of vertical response chamber, and the top of reative cell arranges a reacting gas conveying device 50. Reacting gas 50a, 50b or more kinds of reacting gas are connected with reacting gas conveying device 50, for the delivered inside reacting gas to reative cell 1. Selectively, reacting gas conveying device 50 is also connected with a cooling device or temperature control equipment 16, and this cooling device or temperature control equipment 16 can be in the time that reative cell 1 is worked carry out cooling or realize temperature control some part (not shown) of reacting gas conveying device 50.
Reative cell 1 also comprises reative cell sidewall 6, is provided with substrate support seat 20 in the interior zone of reative cell sidewall 6, and the upper surface of substrate support seat 20 is placed with or accommodates multi-disc substrate W. Selectively, the appropriate position below substrate support seat 20 is provided with heater 2, for equably substrate support seat 20 and substrate W placed thereon being heated. In order to realize better thin film deposition effect, in process treatment process, substrate support seat 20 can also keep rotation (as represented in arrow 24) with certain rotating speed, and this rotation can realize by a rotating shaft 5 being connected with substrate support seat 20 and rotating mechanism 7. Certainly the rotation of substrate support seat 20 also can otherwise realize. Also comprise an exhaust apparatus 8 in the appropriate position of reative cell 1, in order to the reacting gas of reative cell 1 and side reaction gas are discharged to reative cell 1 inside, and to keep the inside of reative cell 1 be vacuum or the reaction environment with certain air pressure.
It should be noted that, the reacting gas conveying device 50 shown in Fig. 2 is only schematically, and in fact it can have the multiple plan of establishment, its particular location be also not limited to be positioned at substrate support seat 20 directly over. For example, reacting gas conveying device 50 can be configured to one or more gas ejectors (gasinjector), its particular location can be positioned at directly over substrate support seat 20 or be positioned at the appropriate position of reative cell sidewall 6, for the internal spray reacting gas to reative cell 1; Reacting gas conveying device 50 also can adopt the form of distribution of gas spray equipment (gasdistributionshowerhead), is closely provided with multiple tiny distribution of gas holes on described distribution of gas spray equipment. Further, multiple distribution of gas sprays district can also be set on described distribution of gas spray equipment, as, middle section and fringe region, the distribution of gas spray in multiple distribution of gas sprays district can be controlled separately, thereby the film growth reaction on the substrate support seat 20 below can regulating, to improve the homogeneity of film growth.
Incorporated by reference to consulting Fig. 2 and Fig. 3, Fig. 3 is the schematic perspective view of substrate support seat 20 shown in Fig. 2, is wherein the substrate support seat 20 shown in Fig. 2 along hatching I-I gained sectional view. According to an embodiment of the present, the substrate support seat 20 shown in Fig. 2 is a member in the form of annular discs, comprises upper surface 140 and lower surface 142. On upper surface 140, comprise the one or more substrate bearings region 20a for placing some substrate W and the multiple gas guide hole 20b that arrange around described substrate bearing region 20a. Particularly, the upper surface of substrate support seat 20 is separated into or is divided into multiple substrate bearings region 20a, and correspondence is held and places one or more pieces (being only schematically represented as a slice in diagram) substrate W in each substrate bearing region 20a. Multiple gas guide hole 20b are set in the outside of each substrate bearing region 20a, and these multiple gas guide hole 20b are surrounded this substrate bearing region 20a. These multiple gas guide hole 20b are also communicated with exhaust apparatus 8 fluids of reative cell 1. As a kind of embodiment, described multiple gas guide hole 20b run through upper surface 140 and the lower surface 142 of substrate support seat 20.
Utilize reative cell 1 to deposit or the process treatment process of epitaxial growth III-V family film in, the reacting gas conveying device 50 of reative cell 1 passes into reacting gas 50a, 50b to reative cell 1 inside, due to suction, the scavenging action of exhaust apparatus 8, partial reaction gas 50a, 50b can be along path 10 and gas coming through guide hole 20b, and discharges reative cell 1 by exhaust apparatus 8. because multiple gas guide hole 20b arrange along the outside of each substrate bearing region 20a, thereby, be positioned at the partial reaction gas 50a of each substrate bearing region 20a top, 50b can be led to and flows into multiple gas guide hole 20b of substrate bearing region 20a outside separately along the path 10 of top separately, like this, with exhaust pathway of the prior art 900 as shown in Figure 1, 902 and 904 very long differences, on substrate support seat 20 of the present invention, form multiple short and small exhaust pathways 10, reduce the speed of the film growth of MOCVD process units, quality, thickness homogeneity is subject to the impact in reacting gas transportation and path, be easy to make the lip-deep all substrates at substrate support seat 20 to obtain thin film deposition equably, and because the outside of substrate bearing region, everywhere 20a arranges multiple gas guide hole 20b around this substrate bearing region 20a, thereby, the mobile reacting gas 50a along path 10, 50b can form one and surround this substrate bearing region 20a " air curtain ", should " air curtain " described multiple substrate bearings region 20a be separated mutually, ensure that the substrate in each substrate bearing region 20a has separate, same reaction environment, the final lip-deep all substrate W that ensure substrate support seat 20 all obtain thin film deposition equably.
The reative cell that substrate support seat provided by the present invention is particularly useful for having large-sized substrate support seat and/or has the substrate of major diameter size. in order to improve the handling capacity of production capacity and film growth apparatus, the diameter of the substrate support seat in the reative cell of MOCVD process units can become increasing, above it, can be placed increasing substrate, or, it is increasing that the diameter of its substrate of placing above can become, and this can cause the inhomogeneous problem of film of growing in substrates of different on substrate support seat. and utilize substrate support seat of the present invention setting, although it is a lot of to have the substrate quantity of holding on large-sized substrate support seat 20, but by substrate support seat being divided into several substrate bearing regions, each periphery, substrate bearing region arranges multiple gas guide holes or multiple gas guide channel, in the time of PROCESS FOR TREATMENT, multiple gas guide holes or multiple gas guide channel can be guided the trend of reacting gas, outside in each substrate bearing region forms " air curtain ", thereby on whole substrate support seat, form multiple relatively independent " sub-conversion zones " mutually, the existence of these " sub-conversion zones ", not only make the exhaust pathway of reacting gas greatly shorten compared with prior art, and, also can on substrate support seat, form multiple mutually same, independently " sub-conversion zone ", ensure that the film that the surface of the substrate in each substrate bearing region deposits is even.
Be to be understood that, Fig. 3 only schematically illustrated whole substrate support seat 20 comprises 8 substrate bearing region 20a, in each substrate bearing region 20a, place a slice substrate W, in fact, whole substrate support seat 20 can arrange according to actual needs the substrate bearing region 20a of varying number, also can hold 2 or more substrate W in each substrate bearing region 20a.
Fig. 4 is the another kind of embodiment of substrate support seat of the present invention, is the one distortion of the substrate support seat shown in Fig. 3. The multiple gas guide holes shown in Fig. 3 are deformed into multiple gas guide channels by Fig. 4. As shown in Figure 4, on substrate support seat 22, be provided with multiple substrate bearings region 22a, in each substrate bearing region 22a, place a slice substrate W, multiple gas guide channel 22b are set in the periphery of each substrate bearing region 22a. With similar shown in Fig. 3, by multiple gas guide channel 22b being set around multiple substrate bearings region 22a, whole substrate support seat 22 is separated into multiple relatively independent " sub-conversion zones " mutually. Be to be understood that, Fig. 4 only schematically illustrated whole substrate support seat 22 comprises 8 substrate bearing region 22a, in each substrate bearing region 22a, place a slice substrate W, in fact, whole substrate support seat can arrange according to actual needs the substrate bearing region of varying number, also can hold 2 or more substrate in each substrate bearing region.
Should be appreciated that multiple gas guide hole 20b in Fig. 3 and Fig. 4 and multiple gas guiding hole slot 22b also can be deformed into the combination of multiple gas guide holes and multiple gas guide channels. ,, for some substrate bearings region, its periphery can be provided with multiple gas guide holes and multiple gas guide channel simultaneously.
Fig. 5 is the another kind of embodiment of substrate support seat of the present invention, is the one distortion of the substrate support seat shown in Fig. 3. Substrate support seat 40 in Fig. 5 comprises 3 substrate bearing region 40a, in each substrate bearing region 40a, holds 3 substrate W, and multiple gas guide hole 40b are set in the periphery of each substrate bearing region 40a. Like this, whole substrate support seat 40 is divided into 3 mutual relatively independent " sub-conversion zone ". Be to be understood that, Fig. 5 only schematically illustrated whole substrate support seat 40 comprises 3 substrate bearing region 40a, in each substrate bearing region 40a, place 3 substrate W, in fact, whole substrate support seat can arrange 2 or substrate bearing region more than 3 according to actual needs, also can hold 2 or substrate more than 3 in each substrate bearing region.
Fig. 6 is the another kind of embodiment of substrate support seat of the present invention, is the one distortion of the substrate support seat shown in Fig. 5. Substrate support seat 80 in Fig. 6 comprises multiple (being illustrated as 3 in diagram) substrate bearing region 80a, places 3 substrate W in each substrate bearing region 80a, multiple gas guide channel 80b are set in the periphery of each substrate bearing region 80a. Like this, whole substrate support seat 80 is divided into 3 mutual relatively independent " sub-conversion zone ". In diagram, multiple gas guide channel 80b of each 80a periphery, substrate bearing region can be arranged to the groove mutually disconnecting as shown, also can be arranged to continuous cannelure mutually. Be to be understood that, Fig. 6 only schematically illustrated whole substrate support seat 80 comprises 3 substrate bearing region 80a, in each substrate bearing region 80a, place 3 substrate W, in fact, whole substrate support seat 80a can arrange more substrate bearing region, also can hold and place 2 or multi-disc substrate more in each substrate bearing region.
Similarly, the multiple gas guide holes in Fig. 5 and Fig. 6 and multiple gas guiding hole slot also can be deformed into the combination of multiple gas guide holes and multiple gas guide channels. ,, for some substrate bearings region, its periphery can be provided with multiple gas guide holes and multiple gas guide channel simultaneously.
Fig. 7 and the other two kinds of embodiments that Figure 8 shows that substrate support seat of the present invention are two kinds of distortion of the substrate support seat shown in Fig. 3. Substrate support seat 60 in Fig. 7 comprises multiple (being illustrated as 2 in diagram) substrate bearing region 60a1,60a2, in the 60a1 of substrate bearing region, schematically place 3 substrate W, in the 60a2 of substrate bearing region, schematically place 10 substrates, multiple gas guide hole 60b1 are set in the periphery of substrate bearing region 60a1; Multiple gas guide hole 60b2 are set in the periphery of substrate bearing region 60a2, and the distribution of the corresponding multiple gas guide hole 60b2 of the corresponding multiple gas guide hole 60b1 of substrate bearing region 60a1 and second area 60a2 on substrate support seat 60 is two concentric circles relations, radial distance between adjacent two concentric circles can hold one or more pieces substrates (in diagram, only holding a slice substrate). The seat of substrate support shown in Fig. 8 is the one distortion of the substrate support seat shown in Fig. 7. The two difference is, multiple gas guide hole 60b1,60b2 shown in Fig. 7 are deformed into multiple gas guide channel 62b1,62b2 in Fig. 8. Should be appreciated that gas guide hole described in Fig. 7 and Fig. 8 or gas guide hole also can be deformed into the combination of multiple gas guide channels and multiple gas guide holes.
According to spirit of the present invention and essence, the present invention further provides a kind of substrate support seat for III-V family film growth reative cell, described substrate support seat comprises the multiple substrate bearings region for placing some substrates and is arranged between described adjacent two substrate bearing regions, be used for adjacent two substrate bearing regions separated multiple gas guide holes or guide channel mutually, described multiple gas guide hole or guide channel are communicated with an exhaust apparatus fluid of described reative cell, in thin film growth process processing procedure, the reacting gas of described reative cell flow through described multiple gas guide hole or guide channel, and discharge described reative cell by described exhaust apparatus, in the time that reacting gas is flowed through described gas guide hole or guide channel, described multiple substrate bearings region is separated mutually by described reacting gas.
Should be appreciated that as a kind of embodiment can be shared by two in described multiple substrate bearings region at least partly in described multiple gas guide holes or guide channel. For example, the multiple gas guide hole 60b1 shown in Fig. 7 can be shared by adjacent two substrate bearing region 60a1 and 60a2.
According to foregoing invention spirit and essence, Fig. 9 and Figure 10 provide other two kinds of embodiments of substrate support seat of the present invention. In Fig. 9, whole substrate support seat 82 is separated into multiple (being illustrated as 3) substrate bearing region 82a by multiple gas guide hole 82b, can hold multi-disc (being illustrated as 3) substrate in each substrate bearing region 82a. Similar aforementioned embodiments, also can form multiple (being illustrated as 3) relatively independent " sub-conversion zone " mutually, thereby be conducive to form uniform film growth at whole substrate support seat 82 on substrate support seat 82. As the schematic embodiment of one, the multiple gas guide hole 82b in Fig. 9 are scattered in 3 straight lines on substrate support seat 82, and form each other angle 120 and spend. Should be appreciated that according to actual needs, whole substrate support seat 82 can be separated into more substrate bearing region 82a, and the distribution of multiple gas guide hole 82b is also not limited to linear, for example, can be shaped form, circular arc or the frame bar as chessboard.
Shown in Figure 10, be the distortion shown in Fig. 9, on the substrate support seat 90 shown in Figure 10, be with the difference shown in Fig. 9, the gas guide hole 82b in Fig. 9 is deformed into gas guide channel 90b in Figure 10, and 3 gas guide channel 90b are mutually disconnected. Certainly,, as another embodiment, also can make 3 gas guide channels shown in Figure 10 be interconnected.
In like manner, can be shared by two in described multiple substrate bearings region at least partly in the multiple gas guide holes shown in Fig. 9, Figure 10 or guide channel. For example, the guide channel 90b shown in Figure 10 can be shared by two adjacent substrate bearing region 90a.
It shown in Figure 11, is the distortion of Fig. 7 illustrated embodiment. In Figure 11, on substrate support seat 92, be provided with two substrate bearing region 92a1,92a2. Between substrate bearing region 92a1,92a2, be provided with some gas guide hole 92b. On substrate support seat 92 shown in Figure 11, be with the difference shown in Fig. 7, the edge of the substrate support seat 92 in Figure 11 does not arrange some gas guide holes. Because at the edge of substrate support seat 92, air-flow can flow to substrate support seat 92 belows around along this edge, then be deflated device discharge reative cell, thereby the some gas guide hole 60b2 shown in Fig. 7 can be omitted.
It shown in Figure 12, is another embodiment that spirit according to the present invention provides. In Figure 12, on substrate support seat 94, the place of every a slice placement substrate W is all a substrate bearing region 94a. Be provided with to area distribution between adjacent substrate bearing region several gas guide holes 94b. This set can be placed to greatest extent substrate as much as possible and utilize setting of the present invention on the surface of substrate support seat 94.
The periphery that should be appreciated that aforementioned substrate bearing region can distribute equably and be provided with described multiple gas guide hole or guide channel; Or the periphery in aforementioned substrate bearing region also can distribute unevenly and be provided with described multiple gas guide hole or guide channel.
The diameter that should be appreciated that aforementioned multiple gas guide holes can be identical or not identical; The width size of aforementioned multiple gas guide channels can be identical or not identical.
The present invention further provides a kind of reative cell of the III-V family film of growing on substrate, in described reative cell, comprised aforementioned substrate support seat. Substrate support seat of the present invention and use the reative cell of this substrate support seat all kinds of III-V family film that is applicable to grow, related technological reaction comprises metallo-organic compound chemical vapour deposition (CVD) (MOCVD), metallo-organic compound chemical gaseous phase extension (MOVPE), hydride gas-phase epitaxy (HVPE) etc.
Reative cell 1 is as shown in Figure 2 a kind of embodiment of the reative cell of the III-V family film of growing on substrate provided by the invention. In process treatment process, substrate support seat 20 can keep transfixion. Or, in order to realize better thin film deposition effect, in process treatment process, substrate support seat 20 can also keep rotation (as represented in arrow 24) with certain rotating speed, and this rotation can realize by a rotating shaft 5 being connected with substrate support seat 20 and rotating mechanism 7. Selectively, substrate support seat 20 can also be connected with an elevating mechanism (not shown), substrate support seat 20 highly can adjust up and down in reative cell 1.
As previously mentioned, reative cell provided by the invention can be a vertical response chamber, and described reacting gas vertically flows to the upper surface of described substrate support seat from the top of described substrate support seat; It can be also a horizontal reative cell, and described reacting gas is the upper surface through described substrate support seat from the top concurrent flow of described substrate support seat.
According to invention spirit of the present invention and essence, the present invention also provides a kind of technique processing method of the III-V family film of growing on substrate, comprising:
(a) provide a reative cell, described reative cell comprises reacting gas conveying device, substrate support seat, exhaust apparatus, on described substrate support seat, be separated multiple substrate bearings region and be arranged between described adjacent two substrate bearing regions, for by adjacent two substrate bearing regions separated multiple gas guide holes or guide channel mutually, described multiple gas guide holes or guide channel are communicated with an exhaust apparatus fluid of described reative cell;
(b) described substrate is carried out to thin film growth process processing, in described process treatment process, the reacting gas that described reacting gas conveying device provides flow through described multiple gas guide hole or guide channel, and discharge described reative cell by described exhaust apparatus, in the time that reacting gas is flowed through described gas guide hole or guide channel, described multiple substrate bearings region is separated mutually by described reacting gas.
It should be noted that, the specific structural details of various modules/components/device/system of above mentioning, material, function detail all have ripe support in the prior art, for simplicity's sake, do not repeat them here.
Above each embodiment of the present invention is had been described in detail. It should be noted that, above-described embodiment is only exemplary, but not limitation of the present invention. Within any technical scheme that does not deviate from spirit of the present invention all should fall into protection scope of the present invention. In addition, any Reference numeral in claim should be considered as limiting related claim; " comprise " that a word do not get rid of device unlisted in other claim or description or step; The word such as " first ", " second " is only used for representing title, and does not represent any specific order.
Claims (17)
1. with a reative cell for MOCVD method growth III-V family film, comprise substrate support seat, gasDistribution spray equipment, is characterized in that: described substrate support seat comprises for placing the multiple of some substratesSubstrate bearing region and the multiple gas guide holes that around arrange around described multiple substrate bearings region orGuide channel, described multiple gas guide holes or the distribution of guide channel on described substrate support seat are at least twoIndividual concentric circles relation, the radial distance between adjacent two concentric circles can hold one or more pieces substrates,Described multiple gas guide hole or guide channel are communicated with an exhaust apparatus fluid of described reative cell, at filmIn growth technique processing procedure, flow through described multiple gas guide hole or lead of the reacting gas of described reative cellApproaching channel, and discharge described reative cell by described exhaust apparatus;
Described substrate support seat is connected with a rotating mechanism, in the process of substrate PROCESS FOR TREATMENT, and described baseSheet supporting seat keeps rotation;
Multiple distribution of gas sprays district is set, described multiple distribution of gas on described distribution of gas spray equipmentThe distribution of gas spray in spray district is suitable for being controlled separately.
2. reative cell as claimed in claim 1, is characterized in that: in described each substrate bearing region, only putPut a slice substrate.
3. reative cell as claimed in claim 1, is characterized in that: in described each substrate bearing region, placeAt least two substrates.
4. reative cell as claimed in claim 1, is characterized in that: described substrate support seat and an elevating mechanismBe connected, its upper and lower height can be adjusted.
5. reative cell as claimed in claim 1, is characterized in that: the diameter of described multiple gas guide holes is largeLittle identical.
6. reative cell as claimed in claim 1, is characterized in that: the diameter of described multiple gas guide holes is largeLittle not identical.
7. reative cell as claimed in claim 1, is characterized in that: the width of described multiple gas guide channels is largeLittle identical.
8. reative cell as claimed in claim 1, is characterized in that: the width of described multiple gas guide channels is largeLittle not identical.
9. reative cell as claimed in claim 1, is characterized in that: the periphery in described substrate bearing region is evenGround distributes and is provided with described multiple gas guide hole or guide channel.
10. reative cell as claimed in claim 1, is characterized in that: described multiple gas guide holes or guide channelIn at least partly by two in described multiple substrate bearings region are shared.
11. reative cells as claimed in claim 1, is characterized in that: described reative cell is a vertical response chamber,Described reacting gas vertically flows to the upper surface of described substrate support seat from the top of described substrate support seat.
12. reative cells as claimed in claim 1, is characterized in that: described reative cell is a horizontal reative cell,Described reacting gas is the upper surface through described substrate support seat from the top concurrent flow of described substrate support seat.
13. 1 kinds of reative cells with MOCVD method growth III-V family film, comprise substrate support seat, gasDistribution spray equipment, is characterized in that: on described substrate support seat, comprise for placing the many of some substratesIndividual substrate bearing region and be arranged between every two adjacent substrate bearing regions, for by adjacent twoMultiple gases that substrate bearing region is mutually separated and around arranged around described multiple substrate bearings regionGuide hole or guide channel, described multiple gas guide holes or the distribution of guide channel on described substrate support seatBe at least two concentric circles relations, the radial distance between adjacent two concentric circles can hold a slice or manySheet substrate, described multiple gas guide holes or guide channel are communicated with an exhaust apparatus fluid of described reative cell,In thin film growth process processing procedure, the described multiple gas guiding of flowing through of the reacting gas of described reative cellHole or guide channel, and discharge described reative cell by described exhaust apparatus;
Described substrate support seat is connected with a rotating mechanism, in the process of substrate PROCESS FOR TREATMENT, and described baseSheet supporting seat keeps rotation;
Multiple distribution of gas sprays district is set, described multiple distribution of gas on described distribution of gas spray equipmentThe distribution of gas spray in spray district is suitable for being controlled separately.
14. reative cells as claimed in claim 13, is characterized in that: described multiple gas guide holes or guidingIn groove at least partly by two in described multiple substrate bearings region are shared.
15. reative cells as claimed in claim 13, is characterized in that: described reative cell is a vertical response chamber,Described reacting gas vertically flows to the upper surface of described substrate support seat from the top of described substrate support seat.
16. reative cells as claimed in claim 13, is characterized in that: described reative cell is a horizontal reactionChamber, described reacting gas is from top concurrent flow table through described substrate support seat of described substrate support seatFace.
17. 1 kinds with grow on the substrate technique processing method of III-V family film of MOCVD method, comprising:
A) provide a reative cell, described reative cell comprises reacting gas conveying device, substrate support seat, rowDevice of air, has been separated multiple substrate bearings region and has been arranged at every two phases on described substrate support seatBetween adjacent substrate bearing region, for adjacent two substrate bearing regions being separated mutually and around describedMultiple gas guide holes or guide channel that multiple substrate bearings region around arranges, described multiple gas guidingsThe distribution on described substrate support seat of hole or guide channel is at least two concentric circles relations, adjacent two withRadial distance between heart circle can hold one or more pieces substrates, described multiple gas guide holes or guidingGroove is communicated with an exhaust apparatus fluid of described reative cell; Described substrate support seat is connected with a rotating mechanism;Described reacting gas conveying device is distribution of gas spray equipment, on described distribution of gas spray equipment, arrangesMultiple distribution of gas sprays district;
B) described substrate is carried out to thin film growth process processing, in described process treatment process, described substrate props upSupport seat keeps rotation, and the distribution of gas spray in described multiple distribution of gas sprays district is controlled separately, described inThe reacting gas that distribution of gas spray equipment provides flow through described multiple gas guide hole or guide channel, and byDescribed exhaust apparatus is discharged described reative cell, in the time that reacting gas is flowed through described gas guide hole or guide channel,Described multiple substrate bearings region is separated mutually by described reacting gas.
Priority Applications (2)
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| CN201010595109.6A CN102031498B (en) | 2010-12-17 | 2010-12-17 | For substrate support seat, its reative cell and the technique processing method of III-V family film growth reative cell |
| TW100131761A TWI423383B (en) | 2010-12-17 | 2011-09-02 | Substrate support for the III-V film growth reaction chamber, its reaction chamber and process treatment |
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| CN201010595109.6A CN102031498B (en) | 2010-12-17 | 2010-12-17 | For substrate support seat, its reative cell and the technique processing method of III-V family film growth reative cell |
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| CN102610698A (en) * | 2012-03-29 | 2012-07-25 | 常州比太科技有限公司 | Conveying carrier plate for manufacturing process of solar silicon wafers |
| US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
| CN102797034B (en) * | 2012-08-27 | 2015-05-20 | 东莞市中镓半导体科技有限公司 | Support boat for GaN material epitaxy industrialization |
| US9738977B1 (en) * | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
| CN106505022A (en) * | 2017-01-03 | 2017-03-15 | 江西比太科技有限公司 | Support plate and the manufacture of solar cells equipment using the support plate |
| US12087573B2 (en) | 2019-07-17 | 2024-09-10 | Lam Research Corporation | Modulation of oxidation profile for substrate processing |
| CN116096939A (en) * | 2020-09-07 | 2023-05-09 | 苏州晶湛半导体有限公司 | Wafer bearing disc |
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| US7156951B1 (en) * | 2002-06-21 | 2007-01-02 | Lam Research Corporation | Multiple zone gas distribution apparatus for thermal control of semiconductor wafer |
| CN101748378A (en) * | 2008-12-15 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film-forming carrier board and production method of solar batteries |
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| US4650064A (en) * | 1985-09-13 | 1987-03-17 | Comptech, Incorporated | Substrate rotation method and apparatus |
| US6579420B2 (en) * | 2001-02-09 | 2003-06-17 | Advanced Optical Solutions, Inc. | Apparatus and method for uniformly depositing thin films over substrates |
| US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
| US6632282B2 (en) * | 2001-09-24 | 2003-10-14 | Neocera, Inc. | Planetary multi-substrate holder system for material deposition |
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| US7156951B1 (en) * | 2002-06-21 | 2007-01-02 | Lam Research Corporation | Multiple zone gas distribution apparatus for thermal control of semiconductor wafer |
| CN101748378A (en) * | 2008-12-15 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film-forming carrier board and production method of solar batteries |
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| TWI423383B (en) | 2014-01-11 |
| TW201234518A (en) | 2012-08-16 |
| CN102031498A (en) | 2011-04-27 |
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