CN102030308A - Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain - Google Patents
Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain Download PDFInfo
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- CN102030308A CN102030308A CN 201010521402 CN201010521402A CN102030308A CN 102030308 A CN102030308 A CN 102030308A CN 201010521402 CN201010521402 CN 201010521402 CN 201010521402 A CN201010521402 A CN 201010521402A CN 102030308 A CN102030308 A CN 102030308A
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Abstract
The invention belongs to the technical field of electronics, and in particular relates to a method for assembling a particle ordered array in a polarized way based on a ferroelectric material electric domain. In the method, an array pattern of surface charges is formed by selectively polarizing an electric domain of a ferroelectric film, and particles are selectively assembled and deposited on the surface of the ferroelectric film through the interaction of the array pattern and polar particles, so that corresponding array distribution of the particles is formed. By particle assembly technology, the method has the advantages of simple and convenient process, low cost and great application value.
Description
Technical field
The invention belongs to electronic technology field, thereby be specifically related to a kind of method that ferroelectric thin film surface charge array is applied to assemble distribution molecule array of constructing.
Background technology
It is that nano material reaches one of important channel of application that molecule is assembled in order, also is one of main means of device miniaturization.Device architecture can be controlled at molecule and even atomic level by package technique, guarantee high-sequential and the directionality of particle on yardstick, thereby promote the manufacturing of all kinds of micro-machine.Reach extensive use in fields such as biologic medical, electron detections.
Ferroelectric material is the widely used functional material of a class.Ferroelectric crystal is made up of many zonules (electricdomain), and the polarised direction unanimity in each electricdomain, the polarised direction of adjacent electricdomain are then different.From macroscopic view, whole crystal is non-polarized, is neutral.But under the external influence (as electric field), polarization enlarges along the electricdomain of direction of an electric field.When all electricdomains all along the external electric field direction, whole crystal becomes single domain crystal, the surface in ferroelectric thin film corresponding polarized zone had bound charge and produced and shield the built in field of ferroelectric thin film electricdomain after polarized this moment.We make its surface form the corresponding graphical electric charge that distributes by the ferroelectric thin film that optionally polarizes, and make it and need assembled particle interaction (positive and negative charge attraction), thereby finish the array pattern deposition of particle.
Summary of the invention
It is orderly to the objective of the invention is to propose a kind of polarization assembling molecule based on the ferroelectric thin film electricdomain
The method of array is to be used for fields such as electronics, biologic medical.
The method based on the polarization assembling molecule oldered array of ferroelectric thin film electricdomain that the present invention proposes specifically comprises the steps:
(1) deposit ferroelectric thin film on substrate;
(2) polarization ferroelectric thin film electricdomain;
(3) ferroelectric material after will polarizing places solution;
(4) from solution, take out ferroelectric thin film and being dried.
Among the present invention, described on substrate the method for deposited iron conductive film, comprising: spin coating, chemical method deposit or physical method deposit etc.
Among the present invention, described substrate comprises: silicon, platinum, ruthenium, iridium, chromium, gold, yttrium oxide or glass etc.
Among the present invention, described molecule can be metallic particles, biomolecule or cell etc.
Among the present invention, the material of described ferroelectric thin film comprises lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base ferroelectric material etc.
Among the present invention, the method for described polarization ferroelectric thin film electricdomain comprise extra electric field, ultraviolet ray irradiation,
Chemical corrosion method or stamping technique etc.
Among the present invention, it is the solution that contains the negative ions of certain band polarity or biomolecule etc. that the ferroelectric material after described will the polarization places the solution of solution.
Among the present invention, describedly the ferroelectric thin film that takes out from solution is carried out dry drying means comprise hot plate heating and air-dry etc.
The two-dimensional array of the molecule that the method for assembling molecule oldered array provided by the present invention can effectively realize distributes, and is widely used, and reduces production costs greatly.
Description of drawings
Fig. 1-Fig. 5 is the example procedure generalized section according to the inventive method.
Number in the figure: 100 silicon substrates, 102 platinum substrates, 104 ferroelectric lead zirconate titanate films, 106 extra electric field equipment, 108 contain the solution of negative ions or biomolecule, cell, the molecule of 110 array distribution.
The specific embodiment
Hereinafter more specifically describe the present invention in the reference example, the invention provides preferred embodiment, but should not be considered to only limit to embodiment set forth herein in conjunction with being shown in.In the drawings, for convenience of description, amplified the thickness in layer and zone, shown in size do not represent actual size.
Reference diagram is the schematic diagram of idealized embodiment of the present invention, embodiment shown in the present should not be considered to only limit to the given shape in zone shown in the figure, in embodiments of the present invention, all represent with optical grating construction, expression among the figure is schematically, but this should not be considered to limit the scope of the invention.
Fig. 1-Fig. 5 is the preparation process generalized section according to the example of the inventive method application.
Fig. 1 is the cross-sectional view of substrate 100 and 102.Selected substrate can be silicon, platinum, ruthenium, iridium, chromium, gold and yttrium oxide, or glass.What example was selected herein is silicon and platinum.
Fig. 2 is the cross-sectional view behind spin coating one deck ferroelectric thin film 104 on the substrate 100, and ferroelectric thin film can be ferroelectric materials such as lead zirconate titanate or polyvinylidene fluoride base.What this example used is lead zirconate titanate, be spin-coated on the substrate 102 with 3000r/min, on the hot plate of 345-360 degree centigrade (preferred 350 degrees centigrade), it is heated 4-8 minute (preferred minute) then, and then under 600-700 degree centigrade (preferred 650 degrees centigrade), annealed 12-16 minute, thereby obtain ferroelectric thin film 104.
The cross-sectional view that Fig. 3 polarizes for the electricdomain to 104 ferroelectric thin films, polarization method can be electric field, ultraviolet irradiation, chemical attack or nanometer embossing etc.This example adopts and utilizes piezoelectricity atomic force microscopy apparatus 106 to utilize extra electric field (needle point adds negative voltage, substrate ground connection) that ferroelectric lead zirconate titanate film 104 is polarized.Extra electric field be distributed as the grating array figure, thereby obtain the ferroelectric thin film 104-1 of polarized (the electricdomain polarised direction up) that grating distributes.
Fig. 4 immerses the schematic diagram in the solution 108 that contains negative ions or band biomolecule or cell later for the ferroelectric thin film that will polarize.What adopt in this example is the tetrachloro alloy acid solution.Ferroelectric lead zirconate titanate film after the polarization is immersed in this solution, placed air ambient 15--25 minute, because the polarization up of ferroelectric thin film electricdomain, promptly make the surface, polairzed area be with corresponding negative electrical charge, gold ion in the solution will carry out oxidation in corresponding negative electrical charge distributed areas and precipitate, and forms the distribution of gold grain.
Fig. 5 is for finishing the sectional view that the molecule assembling distributes on ferroelectric thin film.What use in this example is ferroelectric lead zirconate titanate film, and the assembling of having finished the grating dress of gold grain distributes.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the specification.
Claims (9)
1. method based on the polarization of ferroelectric material electricdomain assembling molecule oldered array, it is characterized in that electricdomain by the ferroelectric material that optionally polarizes, make the ferroelectric material surface with going up the graphical surface charge that distributes, and then interact with the molecule that has polarity, make molecule optionally be assembled in the ferroelectric material surface, concrete steps are:
(1) deposit ferroelectric thin film on substrate;
(2) polarization ferroelectric thin film electricdomain;
(3) ferroelectric material after will polarizing places solution;
(4) from solution, take out ferroelectric thin film and being dried.
2. method according to claim 1 is characterized in that: the method that forms the ferroelectric thin film deposit on substrate is spin coating, chemical method deposit or physical method deposit.
3. method according to claim 1 is characterized in that: described substrate is silicon, platinum, ruthenium, iridium, chromium, gold, yttrium oxide or glass.
4. according to claim 1,2 or 3 described methods, it is characterized in that: described molecule is metallic particles, biomolecule or cell.
5. according to claim 1,2 or 3 described methods, it is characterized in that: the material of described ferroelectric thin film is lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base ferroelectric material.
6. method according to claim 4 is characterized in that: the material of described ferroelectric thin film is lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base ferroelectric material.
7. according to claim 1,2,3 or 4 described methods, it is characterized in that: the method for described polarization ferroelectric thin film electricdomain is extra electric field, ultraviolet irradiation, chemical attack or impression.
8. according to claim 1,2,3 or 4 described methods, it is characterized in that: described solution is to contain the negative ions of certain band polarity or the solution of biomolecule.
9. according to claim 1,2,3 or 4 described methods, it is characterized in that: described drying means is hot plate heating or air-dry.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105214028A CN102030308B (en) | 2010-10-27 | 2010-10-27 | Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain |
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| CN2010105214028A CN102030308B (en) | 2010-10-27 | 2010-10-27 | Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain |
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| CN102030308A true CN102030308A (en) | 2011-04-27 |
| CN102030308B CN102030308B (en) | 2012-08-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103204458A (en) * | 2013-03-14 | 2013-07-17 | 西安交通大学 | Ultraviolet polymerization electret based self-assembly method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562633B2 (en) * | 2001-02-26 | 2003-05-13 | International Business Machines Corporation | Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains |
| US6756236B2 (en) * | 2000-12-05 | 2004-06-29 | Sony International (Europe) Gmbh | Method of producing a ferroelectric memory and a memory device |
| CN1937274A (en) * | 2005-09-23 | 2007-03-28 | 清华大学 | Ferroelectric domain array structure, and its preparing method and ferroelectric film having same |
| CN101612612A (en) * | 2002-12-09 | 2009-12-30 | 北卡罗来纳-查佩尔山大学 | Be used to assemble method and correlated product with the material of sorting of nanostructure-containing |
| CN101786599A (en) * | 2010-01-14 | 2010-07-28 | 复旦大学 | Method for constructing surface topography of ferroelectric film material |
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2010
- 2010-10-27 CN CN2010105214028A patent/CN102030308B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756236B2 (en) * | 2000-12-05 | 2004-06-29 | Sony International (Europe) Gmbh | Method of producing a ferroelectric memory and a memory device |
| US6562633B2 (en) * | 2001-02-26 | 2003-05-13 | International Business Machines Corporation | Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains |
| CN101612612A (en) * | 2002-12-09 | 2009-12-30 | 北卡罗来纳-查佩尔山大学 | Be used to assemble method and correlated product with the material of sorting of nanostructure-containing |
| CN1937274A (en) * | 2005-09-23 | 2007-03-28 | 清华大学 | Ferroelectric domain array structure, and its preparing method and ferroelectric film having same |
| CN101786599A (en) * | 2010-01-14 | 2010-07-28 | 复旦大学 | Method for constructing surface topography of ferroelectric film material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103204458A (en) * | 2013-03-14 | 2013-07-17 | 西安交通大学 | Ultraviolet polymerization electret based self-assembly method |
| CN103204458B (en) * | 2013-03-14 | 2015-06-03 | 西安交通大学 | Ultraviolet polymerization electret based self-assembly method |
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| CN102030308B (en) | 2012-08-01 |
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