CN101786599A - Method for constructing surface topography of ferroelectric film material - Google Patents
Method for constructing surface topography of ferroelectric film material Download PDFInfo
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- CN101786599A CN101786599A CN201010022795A CN201010022795A CN101786599A CN 101786599 A CN101786599 A CN 101786599A CN 201010022795 A CN201010022795 A CN 201010022795A CN 201010022795 A CN201010022795 A CN 201010022795A CN 101786599 A CN101786599 A CN 101786599A
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Abstract
The invention belongs to the technical field of microelectronics, in particular to a method for constructing the surface topography of a ferroelectric film material. In the method, when the nano-imprint technology is utilized to construct the surface topography of the ferroelectric film material, the electric domain spontaneous polarization direction of the imprinted ferroelectric material is enabled to be ordered, and the ordering degree of the electric domain spontaneous polarization direction can be controlled by stress intensity. Compared with the tradition method which relies on external voltage to control the electric domain spontaneous polarization direction of the ferroelectric material, the method of the invention has the advantages of convenience and effectiveness, and can be widely applied to the fields of ferroelectric memories (FeRAMs), microelectronic mechanical systems (MEMS), phoelectron and the like.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to a kind of method of constructing surface topography of ferroelectric film material.
Background technology
Ferroelectric material has characteristics such as ferroelectricity, piezoelectricity, pyroelectricity and nonlinear optical effect because of it, in fields such as Nonvolatile ferroelectric memory (FeRAMs), microelectromechanical systems (MEMS) and photoelectron extremely important application prospect is arranged.In recent years, along with thin film transistor (TFT), memory, the trend of micro-system miniaturization, the structure of the pattern of ferroelectric thin-flim materials nanoscale has caused that scientific and technical boundary studies interest greatly.One of graphical difficult point of ferroelectric thin film pattern of sub-micron and Nano grade is the introducing that utilizes in the technology process such as conventional lithography and beamwriter lithography the ferroelectric material defective, therefore is badly in need of a kind of novel nanometer small size ferroelectric thin-flim materials figure process technology.
Stamping technique is the way that a kind of ancient and emerging material pattern is constructed.Advantages such as it has fast, and is effective.And can break through the limit of traditional optical graphical configuration size, thereby can reduce production costs widely.
Ferroelectric domain is the ferroelectric material physical basis, and the structure of ferroelectric domain and the characteristics of motion thereof have directly determined ferroelectric physical property and application direction thereof.It mainly is by applied voltage polarization ferroelectric material that traditional ferroelectric electricdomain spontaneous polarization direction changes control.And method provided by the invention provides the approach of another control ferroelectric material electricdomain to us.
Summary of the invention
The objective of the invention is to propose a kind of method of constructing surface topography of ferroelectric film material, to be used for processing of ferroelectric thin-flim materials pattern and electricdomain control thereof.
The inventive method is to apply force to ferroelectric thin-flim materials by stamping technique, realizes that in constructing surface topography of ferroelectric film material ferroelectric thin film electricdomain spontaneous polarization direction ordered orientation divides cloth, and concrete steps are as follows:
(1) deposit ferroelectric thin-flim materials on substrate;
(2) with surperficial impressing mould impression ferroelectric thin-flim materials, form corresponding pattern on the ferroelectric thin-flim materials surface with certain pattern;
(3) ferroelectric thin-flim materials that was stamped is carried out thermal annealing.
Among the present invention, the method for structure ferroelectric thin film pattern (as concavo-convex pattern) comprises nano impression, methods such as mechanical stamping on the ferroelectric thin-flim materials of deposit.
Among the present invention, ferroelectric thin-flim materials can be lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base ferroelectric material;
Among the present invention, deposit ferroelectric thin-flim materials method comprises spin coating, titration etc.
Among the present invention, substrate comprises silicon, platinum, ruthenium, iridium, chromium, gold, yttrium oxide or glass etc.
Among the present invention, the thermal annealing temperature is generally 600 ℃ ~ 700 ℃.
The method of constructing surface topography of ferroelectric film material provided by the present invention and electricdomain spontaneous polarization ordered orientationization can realize effectively that ferroelectric thin-flim materials is graphical and carry out ferroelectric electric domain orientation control, is widely used, and reduces production costs greatly.
Description of drawings
Figure 1A-1E is the example procedure generalized section according to the inventive method.
Fig. 2 A-2B be lead zirconate-titanate ferroelectric material under a certain proportioning with 1 micron cycle, the effect schematic diagram behind the silicon template of the 250nm live width impression.
Fig. 3 is the lead zirconate-titanate ferroelectric material electricdomain spontaneous polarization phase diagram without the finished equal proportioning of this method.
Number in the figure: 100 substrates, 102 ferroelectric thin films, 102-1 impression ferroelectric thin film later, the impressing mould of 104 optical grating constructions.
The specific embodiment
Hereinafter more specifically describe the present invention in the reference example, the invention provides preferred embodiment, but should not be considered to only limit to embodiment set forth herein in conjunction with being shown in.In the drawings, for convenience of description, amplified the thickness in layer and zone, shown in size do not represent actual size.
Reference diagram is the schematic diagram of idealized embodiment of the present invention, embodiment shown in the present should not be considered to only limit to the given shape in zone shown in the figure, in embodiments of the present invention, all represent with optical grating construction, expression among the figure is schematically, but this should not be considered to limit the scope of the invention.
Fig. 1 is the preparation process generalized section according to the example of the inventive method application.
Figure 1A is the cross-sectional view of substrate 100.Selected substrate can be silicon, platinum, ruthenium, iridium, chromium, gold and yttrium oxide, glass etc.What example was selected herein is the platinum substrate.
Figure 1B is the cross-sectional view behind spin coating one deck ferroelectric thin-flim materials 102 on the substrate 100, and ferroelectric thin-flim materials can be lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base ferroelectric material.This example uses sol-gel process to prepare ferroelectric lead zirconate titanate film.By certain stoichiometric proportion, be raw material with lead acetate, methyl alcohol, butyl titanate, propyl alcohol zirconium, acetate, be mixed and made into lead zirconate titanate colloidal sol elder generation body by the water-bath heating.With 3000 ~ 3200r/min, on substrate 100, use spin coater spin coating lead zirconate titanate colloidal sol elder generation body 30 ~ 35 seconds, on 170 ~ 180 degrees centigrade hot plate, heated 3 ~ 4 minutes then, on 350 ~ 355 degrees centigrade hot plate, heated 5 ~ 6 minutes at last, thereby obtain one deck ferroelectric thin film.On the ground floor ferroelectric thin film, with 3000 ~ 3200r/min spin coating lead zirconate titanate colloidal sol elder generation body 30 ~ 35 seconds, waits for 3 ~ 4 minutes with spin coater, acquisition second layer ferroelectric thin film, spin coating is 4 ~ 6 times and so forth.On 50 ~ 60 degrees centigrade of hot plates, heat 5 ~ 6 minutes afterwards, thereby finally obtain ferroelectric thin film 102.
Fig. 1 C is the cross-sectional view that utilizes after impressing mould 104 processing impress ferroelectric thin-flim materials, and processing method can be nano impression, mechanical stamping etc.This example adopts the mould nanometer embossing with optical grating construction.
Fig. 1 D is for utilizing ferroelectric thin film 102 surfaces shown in the mould nano impression Fig. 1 C with optical grating construction.After keeping 15 ~ 18 minutes under the pressure of 9 ~ 10 MPas, take off template, just form the concave-convex surface pattern of the ferroelectric thin film 102-1 shown in Fig. 1 E.The ferroelectric thin film 102-1 that then will have concavo-convex pattern carries out heating anneal under 600 ~ 700 degree celsius temperature in annealing furnace, promptly finish the surface topography processing of ferroelectric thin film.
Fig. 2 A is a certain lead zirconate-titanate ferroelectric material with 1 micron cycle, the shape appearance figure behind the silicon template of the 250nm live width impression.
Fig. 2 B is a certain lead zirconate-titanate ferroelectric material with 1 micron cycle, the phase diagram after its electricdomain spontaneous polarization ordered orientationization that the silicon template of 250nm live width impression back forms.
Fig. 3 is not for using the electricdomain spontaneous polarization orientation maps of the finished same lead zirconat-titanato material of this method.Its electricdomain spontaneous polarization orientation is unordered.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the specification.
Claims (6)
1. the method for a constructing surface topography of ferroelectric film material, it is characterized in that applying force to ferroelectric thin-flim materials by stamping technique, realize that in constructing surface topography of ferroelectric film material ferroelectric thin film electricdomain spontaneous polarization direction ordered orientation divides cloth, concrete step comprises:
(1) deposit ferroelectric thin-flim materials on substrate;
(2) with surperficial impressing mould impression ferroelectric thin-flim materials, form corresponding pattern on the ferroelectric thin-flim materials surface with certain pattern;
(3) ferroelectric thin-flim materials that was stamped is carried out thermal annealing.
2. method according to claim 1 is characterized in that: thereby described impressing mould impression ferroelectric thin-flim materials forms the method for film surface appearance is nano impression or mechanical stamping.
3. method according to claim 1 and 2 is characterized in that: described ferroelectric thin-flim materials is lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base.
4. method according to claim 1,, it is characterized in that: described on substrate the method for deposit ferroelectric thin-flim materials be spin coating or titration method.
5. method according to claim 1 is characterized in that described substrate is silicon, platinum, ruthenium, iridium, chromium, gold, yttrium oxide or glass.
6. method according to claim 1 is characterized in that described thermal annealing temperature is 600 ℃ ~ 700 ℃.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021572A (en) * | 2010-12-20 | 2011-04-20 | 复旦大学 | Particle self-assembly method based on nano-imprinting of ferroelectric materials |
| CN102030308A (en) * | 2010-10-27 | 2011-04-27 | 复旦大学 | Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain |
| CN102390802A (en) * | 2011-07-11 | 2012-03-28 | 西安交通大学 | Indentation forming method comprising electric capillary force driving filling and back electric field-assisted demoulding |
| CN113744767A (en) * | 2021-08-31 | 2021-12-03 | 广东工业大学 | Method for preparing titanium dioxide film with grating structure by using DVD (digital video disk) optical disk, film prepared by method and application of film |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102030308A (en) * | 2010-10-27 | 2011-04-27 | 复旦大学 | Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain |
| CN102030308B (en) * | 2010-10-27 | 2012-08-01 | 复旦大学 | Method for assembling particle ordered array in polarized way based on ferroelectric film electric domain |
| CN102021572A (en) * | 2010-12-20 | 2011-04-20 | 复旦大学 | Particle self-assembly method based on nano-imprinting of ferroelectric materials |
| CN102021572B (en) * | 2010-12-20 | 2012-07-25 | 复旦大学 | Particle self-assembly method based on nano-imprinting of ferroelectric materials |
| CN102390802A (en) * | 2011-07-11 | 2012-03-28 | 西安交通大学 | Indentation forming method comprising electric capillary force driving filling and back electric field-assisted demoulding |
| CN102390802B (en) * | 2011-07-11 | 2014-07-02 | 西安交通大学 | Indentation forming method comprising electric capillary force driving filling and back electric field-assisted demoulding |
| CN113744767A (en) * | 2021-08-31 | 2021-12-03 | 广东工业大学 | Method for preparing titanium dioxide film with grating structure by using DVD (digital video disk) optical disk, film prepared by method and application of film |
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Application publication date: 20100728 |