CN102027611B - 薄膜晶体管的n-型半导体材料 - Google Patents

薄膜晶体管的n-型半导体材料 Download PDF

Info

Publication number
CN102027611B
CN102027611B CN200980111980XA CN200980111980A CN102027611B CN 102027611 B CN102027611 B CN 102027611B CN 200980111980X A CN200980111980X A CN 200980111980XA CN 200980111980 A CN200980111980 A CN 200980111980A CN 102027611 B CN102027611 B CN 102027611B
Authority
CN
China
Prior art keywords
thin film
organic
group
semiconductor material
organic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980111980XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102027611A (zh
Inventor
D·舒克拉
T·R·韦尔特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN102027611A publication Critical patent/CN102027611A/zh
Application granted granted Critical
Publication of CN102027611B publication Critical patent/CN102027611B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
CN200980111980XA 2008-04-11 2009-03-17 薄膜晶体管的n-型半导体材料 Expired - Fee Related CN102027611B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/101,179 US7649199B2 (en) 2008-04-11 2008-04-11 N-type semiconductor materials in thin film transistors and electronic devices
US12/101179 2008-04-11
US12/101,179 2008-04-11
PCT/US2009/001680 WO2009126203A1 (en) 2008-04-11 2009-03-17 N-type semiconductor materials in thin film transistors

Publications (2)

Publication Number Publication Date
CN102027611A CN102027611A (zh) 2011-04-20
CN102027611B true CN102027611B (zh) 2013-03-06

Family

ID=40691329

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980111980XA Expired - Fee Related CN102027611B (zh) 2008-04-11 2009-03-17 薄膜晶体管的n-型半导体材料

Country Status (5)

Country Link
US (1) US7649199B2 (enExample)
EP (1) EP2266150A1 (enExample)
JP (1) JP5485981B2 (enExample)
CN (1) CN102027611B (enExample)
WO (1) WO2009126203A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
JP6239608B2 (ja) * 2012-07-04 2017-11-29 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ バニリン含有水性塩基性組成物からバニリンを得るための方法
US9576868B2 (en) * 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
WO2014031750A1 (en) 2012-08-22 2014-02-27 University Of Washington Through Its Center For Commercialization Acenaphthylene imide-derived semiconductors
CN102915835B (zh) * 2012-10-18 2016-02-24 中国科学院化学研究所 一种以稠环芳烃衍生物为电子储存材料的全固态电储能器件
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
WO2015038671A2 (en) 2013-09-10 2015-03-19 University Of Washington Non-fullerene electron acceptors for organic photovoltaic devices
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
CN109880065B (zh) * 2019-02-26 2020-05-26 中国科学院化学研究所 含三氟甲基共轭聚合物及其制备方法与应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
US7026643B2 (en) * 2001-05-04 2006-04-11 International Business Machines Corporation Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide
US7402835B2 (en) 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
JP2006045165A (ja) 2004-08-09 2006-02-16 Mitsui Chemicals Inc テトラカルボン酸誘導体、および該化合物を用いた電子写真感光体、電子写真装置
US7326956B2 (en) * 2004-12-17 2008-02-05 Eastman Kodak Company Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US7198977B2 (en) * 2004-12-21 2007-04-03 Eastman Kodak Company N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7579619B2 (en) * 2005-04-20 2009-08-25 Eastman Kodak Company N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7629605B2 (en) * 2005-10-31 2009-12-08 Eastman Kodak Company N-type semiconductor materials for thin film transistors
US7422777B2 (en) 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7804087B2 (en) 2006-12-07 2010-09-28 Eastman Kodak Company Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2006-45165A 2006.02.16

Also Published As

Publication number Publication date
EP2266150A1 (en) 2010-12-29
US7649199B2 (en) 2010-01-19
WO2009126203A1 (en) 2009-10-15
US20090256137A1 (en) 2009-10-15
CN102027611A (zh) 2011-04-20
JP2011520246A (ja) 2011-07-14
JP5485981B2 (ja) 2014-05-07

Similar Documents

Publication Publication Date Title
CN102027611B (zh) 薄膜晶体管的n-型半导体材料
TWI416721B (zh) 作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺
EP2089919B1 (en) Naphthalene-based tetracarboxylic diimide compounds as semiconductor materials
US7326956B2 (en) Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US8187915B2 (en) Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
US7579619B2 (en) N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
TWI423493B (zh) 用於薄膜電晶體之ｎ型半導體材料、製造薄膜半導體裝置之方法、電子裝置及積體電路
CN102714275A (zh) 有机半导电组合物和n-型半导体设备
JP2010531551A (ja) 電子デバイスのためのヘテロピレン系半導体材料
JP2009514223A (ja) 薄膜トランジスタのためのｎ型半導体材料
US7858970B2 (en) Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130306

Termination date: 20190317

CF01 Termination of patent right due to non-payment of annual fee