CN102024914A - Method for manufacturing top electrode of organic electroluminescent display - Google Patents
Method for manufacturing top electrode of organic electroluminescent display Download PDFInfo
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- CN102024914A CN102024914A CN2009101957160A CN200910195716A CN102024914A CN 102024914 A CN102024914 A CN 102024914A CN 2009101957160 A CN2009101957160 A CN 2009101957160A CN 200910195716 A CN200910195716 A CN 200910195716A CN 102024914 A CN102024914 A CN 102024914A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
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- 238000002347 injection Methods 0.000 claims abstract description 5
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- 238000005401 electroluminescence Methods 0.000 claims description 23
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
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- 239000012780 transparent material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 3
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Abstract
The invention relates to a method for manufacturing a top electrode of an organic electroluminescent display, which comprises the following steps of: placing a display device with a structure on which an organic light-emitting layer, a current carrier transport layer and a current carrier injection layer are manufactured into a vacuum chamber; and manufacturing a transparent conductive membrane layer as the top electrode by using a plasma beam sputtering method. The method can maintain the advantage that chemical components are easy to control in a sputtering membrane forming method, but compared with the common method for manufacturing the top electrode through magnetron sputtering, the method can greatly reduce the contact of plasmas and an organic membrane, and effectively reduce negative effects caused by the plasmas on the organic membrane; and simultaneously, the method can greatly reduce or avoid the use of oxygen, greatly reduce the oxygen partial pressure in the vacuum chamber, and effectively reduce the negative effects caused by the oxygen on the organic membrane, thereby improving the brightness and the luminous efficiency and prolonging the service life of the organic electroluminescent display.
Description
Technical field
The present invention relates to technical field of flat panel display, particularly a kind of top electrode manufacture method of active system organic electroluminescent display of emission structure at top.
Background technology
Characteristics such as that the organic electroluminescent flat-panel monitor has is all solid state, active illuminating, color are good, in light weight, thin thickness, visual angle are big, simple in structure are acknowledged as the flat-panel monitor of future generation that future can the replacement liquid crystal display.And the display of organic electroluminescence that has added the active driving of TFT (thin-film transistor) is the major technology direction.The display of organic electroluminescence of active driving has two kinds of printing opacity modes: emitter junction structure and emission structure at top.Back of the body emission is usually with the top electrode of thicker lighttight metallic aluminium as device, and the light that organic material sends enters people's eyes by TFT and glass substrate.But because the semi-conducting material that is adopted of TFT is generally opaque material (being mainly silicon), part TFT electrode also adopts opaque metal material usually, this has caused a part of light to be blocked by TFT and has reduced the aperture opening ratio of display device, has reduced the brightness of device.Along with the brightness and the resolution requirement of display of organic electroluminescence are more and more higher, the device of emitter junction structure more and more can not satisfy the demands.And emission structure at top has higher aperture opening ratio, thereby has improved the brightness of device because light does not directly enter people's eyes through transparent top electrode by TFT.Emission structure at top can also adopt microcavity effect to improve the colorimetric purity of device in addition, improves the color of device.Therefore, emission structure at top becomes the major technique direction of the display of organic electroluminescence of advanced active driving.
The display of organic electroluminescence of emission structure at top requires top electrode promptly enough conductivity will be arranged, and enough transparencies is arranged again to pass through light.If the electrode of metal that the emitter junction structure is commonly used is directly used in the emission structure at top, too thick then light tight, too thin then conductivity is very poor, and this causes very difficulty of technology controlling and process, so metal is difficult to directly as the top electrode in the emission structure at top.In order to guarantee conductivity and transparency simultaneously, more advanced, more reliable technique is that the perhaps thin metallic film and the composite membrane of compound transparent conductive material film are as upper electrode layer with compound transparent conductive material (the most frequently used be tin indium oxide (ITO)) film.Compound transparent conductive material film has the number of chemical composition usually, and in various film build methods, sputtering method is the film build method efficiently that can guarantee stoicheiometry, and wherein magnetron sputtering is the most frequently used sputtering method.But in the common magnetically controlled sputter method, radio frequency or direct voltage are added on the base of target and produce plasma, so plasma causes substrate to be directly exposed among the aura and charged particle of plasma between target and substrate like this.In the top electrode process of making display of organic electroluminescence, be coated with the substrate of the display of organic layer as plated film, organic material in the device can bring great injury to organic material among being exposed to aura (containing a large amount of ultraviolet rays) in the plasma and high energy charged particles, display device brightness and luminous efficiency are sharply descended, even do not work fully.In addition, the needed oxygen of sputter oxidic transparent conductive film also can bring very big negative effect to organic material.Therefore, make the key technology bottleneck that top electrode becomes the active system organic electroluminescent display of emission structure at top with suitable method.
Summary of the invention
The top electrode method of active system organic electroluminescent display that The present invention be directed to present making emission structure at top is to luminous efficiency, brightness, there is dysgenic problem in life-span, a kind of top electrode manufacture method of display of organic electroluminescence has been proposed, described this top electrode manufacture method can avoid the organic layer of display in the magnetically controlled sputter method of the prior art to be directly exposed to defective among the plasma, and reduce or avoid the use of oxygen, thereby reduce injury, improve the display of organic electroluminescence brightness of emission structure at top organic layer, luminous efficiency and life-span.
Technical scheme of the present invention is: a kind of top electrode manufacture method of display of organic electroluminescence comprises the steps:
1) will complete organic elctroluminescent device after organic luminous layer, carrier blocking layers, the carrier injection layer structure is put into a vacuum chamber;
2) again argon gas is fed a plasma torch and produce beam-plasma, beam-plasma is got on the ceramic target that a transparent conductive material is made into, the electrically conducting transparent material is sputtered out, deposition forms the conductive film of layer of transparent on display, as the top electrode of display of organic electroluminescence;
3) after etc. top electrode reaches thickness, close gas and plasma torch power supply.
Display device in the described step 1) can evaporate the thin metal film of one deck earlier, makes composite membrane as top electrode with beam-plasma sputter transparent conductive film again.Described thin thickness of metal film at 1nm between the 20nm.
Described transparent conductive material is selected oxide, nitride or sulfide for use, feeds corresponding oxygen, nitrogen, hydrogen sulfide gas in the vacuum chamber of described step 1).
In the described beam-plasma spatter film forming process, between display and target, add the metal grid mesh of a band bias-voltage, be used to adsorb charged particle.
The thickness range of described upper electrode film layer is that 10nm is between the 1000nm.
In the described beam-plasma spatter film forming process, plasma torch moves reciprocatingly, and perhaps rotatablely moves, and is used to increase the area of upper electrode film that display becomes, and improves the uniformity of upper electrode film.
In the described beam-plasma spatter film forming process, the ceramic target that transparent conductive material is made into comes back rotation, is used to increase the area of upper electrode film that display becomes, and improves the uniformity of upper electrode film.
Described display moves back and forth, and perhaps rotates in beam-plasma spatter film forming process, is used to increase the area of upper electrode film that display becomes, and improves the uniformity of upper electrode film.
Beneficial effect of the present invention is: the top electrode manufacture method of display of organic electroluminescence of the present invention, effectively reduce of the damage of the active system organic electroluminescent display top electrode spatter film forming process ionic medium of emission structure at top to organic layer, effectively suppress oxygen to injury, improved brightness, luminous efficiency and the life-span of the active system organic electroluminescent display spare of emission structure at top organic layer.
Description of drawings
Fig. 1 is the top electrode manufacturing process schematic diagram of display of organic electroluminescence of the present invention;
Brightness-drain voltage curve that Fig. 2 lights after completing for active system organic electroluminescent display of the present invention.
Embodiment
As shown in Figure 1, organic luminous layer will complete, carrier blocking layers, organic elctroluminescent device 1 after the structures such as carrier injection layer, put into a vacuum chamber 6 (before this, can be earlier in the another one vacuum chamber method of evaporating make the thin metal level of one deck, can not do) yet, inlet 7 is arranged below the vacuum chamber 6, one vacuum pump air entry 9 is arranged at top, described vacuum chamber 6 has a plasma torch 8 that can produce beam-plasma, also have a target 5 that is made into transparent conductive material, between display device 1 and target 5, also have a metal grid mesh 2 that has added bias-voltage in addition; In plasma torch 8, feed argon gas then, start plasma torch 8 power supplys and produce beam-plasma; Beam-plasma is aimed at the target 5 that is made into transparent conductive material, deposit on the display device 1 after the material on the target 5 is sputtered out, form upper electrode film, facing to target 5 inspection hole 4 is arranged on the vacuum chamber 6; The metal grid mesh 2 that has added bias-voltage in the sputter procedure can absorb charged particle to reduce the injury of charged particle to organic layer, after reaching adequate thickness Deng top electrode, the thickness range of general upper electrode film layer is that 10nm is between the 1000nm, close gas and plasma torch power supply, display device 1 is taken out in vacuum chamber 6; In protective atmosphere, encapsulate, bind drive circuit at last, facing to metal grid mesh 2 inspection hole 3 is arranged on the vacuum chamber 6.
Before the transparent conductive material film is made in sputter, if select the thin metallic diaphragm of evaporation one deck earlier, so the thickness of metallic diaphragm at 1nm between the 20nm.The main effect of this metal level is further to increase conductivity, plays the effect of protection organic layer simultaneously in follow-up beam-plasma sputter procedure.But this layer metal film must be very thin, guarantees to have good transparency.If follow-up beam-plasma sputtering technology is controlled enough well, and is enough little to the damage of organic layer, this layer metal film also can omit and not do.
If what make is the oxidic transparent electric conducting material, in sputter procedure, needs to feed a spot of oxygen and enter vacuum chamber 6, in the sull that guarantees to be become enough oxygen to be arranged, to guarantee transparency and conductivity; If what make is the nitride transparent electric conducting material, in sputter procedure, needs to feed a spot of nitrogen and enter vacuum chamber; If what make is the sulfide transparent conductive material, in sputter procedure, needs to feed a spot of stink damp and enter vacuum chamber.
In the sputter procedure, plasma torch or target or display device can be done suitable reciprocating motion or rotatablely move, and to increase the area of upper electrode film that display is become, improve the uniformity of upper electrode film.
Common magnetron sputtering plasma is in the scope bigger between target and the substrate, and the method ionic medium bundle of beam-plasma sputter concentrates in the scope smaller between plasma torch and the target, and therefore the method for beam-plasma sputter can effectively reduce contacting of plasma and substrate, the display device of having avoided plating organic layer directly is among the plasma, thereby effectively reduced the injury of aura in the plasma (containing a large amount of ultraviolet rays) and high energy particle, thereby brightness, luminous efficiency and the life-span of having improved display device to organic layer.In addition, common magnetron sputtering is compared, the used plasma of beam-plasma sputter has higher energy, can sputter under the lower situation of air pressure, therefore need still less oxygen just can guarantee the content of oxygen in the film in the film forming procedure, to guarantee transparency and conductivity, therefore, if the material of institute's film forming is the oxidic transparent electric conducting material, the oxygen that the spatter film forming process is used still less even can be avoided the use of oxygen, and partial pressure of oxygen is lower in the vacuum chamber like this, can effectively reduce the injury of oxygen to organic layer, thus the brightness that has further improved display device, luminous efficiency and life-span.
Example: prepare earlier the glass substrate of the TFT that completed, substrate size is 35mm * 35mm, and resolution is 80 * 60, TFT wherein with low temperature polycrystalline silicon as semi-conducting material.In vacuum chamber, after the method for using evaporation on the glass substrate of band TFT is made organic films such as organic luminous layer, carrier blocking layers, carrier injection layer, on organic layer, make the metallic aluminium film that a layer thickness is 7 sodium rice in the method for the indoor thermal evaporation of vacuum again, wherein, the purity as the aluminium that evaporates material is 99.99%.Then device is put into one and have a plasma torch and a ceramic target that is made into tin indium oxide (ITO) under the situation of not destroying vacuum.Plasma torch wherein is the Kaufman plasma torch, and the beam-plasma diameter of generation is about 3cm.The tin indium oxide ceramic target be shaped as circular plate type, diameter is 8cm, thickness is 5mm, material purity is 99.9%.The metal grid mesh of the band bias voltage that to place a diameter in the display device front be the 10cm circle is with the absorption charged ion.Feeding flow earlier before sputter begins is the oxygen of 2sccm (ml/min under the status of criterion), and feeding flow again from the Kaufman plasma torch is the argon gas of 2sccm, and the control vacuum valve maintains about 0.1 handkerchief gas pressure in vacuum.Start plasma torch and begin sputter, the discharge voltage of sputter procedure ionic medium rifle is set in 800 volts, and ion beam energy is set in 2000 electron-volts, and the incident angle of beam-plasma and tin indium oxide ceramic target is 38 °.Sputtering time is 20 minutes, and the ITO thickness that obtains is 150nm.Sputter finishes the back takes out in vacuum chamber, encapsulates in the nitrogen protection atmosphere of drying, carries out the drive circuit binding then.Back making alive test again.Brightness-drain voltage curve when whole all pixels of screen added direct voltage simultaneously during Fig. 2 afterwards tested for display completes, added grid voltage remains on 15 volts and makes the TFT conducting in the test process.
Claims (9)
1. the top electrode manufacture method of a display of organic electroluminescence comprises the steps:
1) will complete organic elctroluminescent device after organic luminous layer, carrier blocking layers, the carrier injection layer structure is put into a vacuum chamber;
2) again argon gas is fed a plasma torch and produce beam-plasma, beam-plasma is got on the ceramic target that a transparent conductive material is made into, the electrically conducting transparent material is sputtered out, deposition forms the conductive film of layer of transparent on display, as the top electrode of display of organic electroluminescence;
3) after etc. top electrode reaches thickness, close gas and plasma torch power supply.
2. the top electrode manufacture method of display of organic electroluminescence according to claim 1, it is characterized in that, display device in the described step 1) can evaporate the thin metal film of one deck earlier, makes composite membrane as top electrode with beam-plasma sputter transparent conductive film again.
3. the top electrode manufacture method of display of organic electroluminescence according to claim 1, it is characterized in that, described transparent conductive material is selected oxide, nitride or sulfide for use, feeds corresponding oxygen, nitrogen, hydrogen sulfide gas in the vacuum chamber of described step 1).
4. the top electrode manufacture method of display of organic electroluminescence according to claim 1 is characterized in that, in the described beam-plasma spatter film forming process, adds the metal grid mesh of a band bias-voltage between display and target, is used to adsorb charged particle.
5. the top electrode manufacture method of display of organic electroluminescence according to claim 1 is characterized in that, the thickness range of described upper electrode film layer is that 10nm is between the 1000nm.
6. the top electrode manufacture method of display of organic electroluminescence according to claim 1, it is characterized in that, in the described beam-plasma spatter film forming process, plasma torch moves reciprocatingly, perhaps rotatablely move, be used to increase the area of upper electrode film that display becomes, improve the uniformity of upper electrode film.
7. the top electrode manufacture method of display of organic electroluminescence according to claim 1, it is characterized in that, in the described beam-plasma spatter film forming process, the ceramic target that transparent conductive material is made into comes back rotation, be used to increase the area of upper electrode film that display becomes, improve the uniformity of upper electrode film.
8. the top electrode manufacture method of display of organic electroluminescence according to claim 1, it is characterized in that, described in beam-plasma spatter film forming process, display moves back and forth, perhaps rotate, be used to increase the area of upper electrode film that display becomes, improve the uniformity of upper electrode film.
9. the top electrode manufacture method of display of organic electroluminescence according to claim 2 is characterized in that, described thin thickness of metal film at 1nm between the 20nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101957160A CN102024914A (en) | 2009-09-16 | 2009-09-16 | Method for manufacturing top electrode of organic electroluminescent display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101957160A CN102024914A (en) | 2009-09-16 | 2009-09-16 | Method for manufacturing top electrode of organic electroluminescent display |
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| CN102024914A true CN102024914A (en) | 2011-04-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108220899A (en) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of sputtering equipment |
| CN116288199A (en) * | 2023-02-10 | 2023-06-23 | 苏州迈为科技股份有限公司 | Coating device |
-
2009
- 2009-09-16 CN CN2009101957160A patent/CN102024914A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108220899A (en) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of sputtering equipment |
| CN116288199A (en) * | 2023-02-10 | 2023-06-23 | 苏州迈为科技股份有限公司 | Coating device |
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Application publication date: 20110420 |