CN102023172B - 使用X-射线特征谱对SiGe薄膜进行定量分析的方法 - Google Patents
使用X-射线特征谱对SiGe薄膜进行定量分析的方法 Download PDFInfo
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Cited By (1)
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US12092510B2 (en) | 2020-09-03 | 2024-09-17 | Changxin Memory Technologies, Inc. | Weighing device |
Families Citing this family (5)
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CN102042921B (zh) * | 2009-10-15 | 2012-07-11 | 上海华虹Nec电子有限公司 | 为SiGe薄膜定量分析制作的标准样品及制备方法 |
CN102279199A (zh) * | 2011-07-12 | 2011-12-14 | 武汉钢铁(集团)公司 | 取向硅钢中析出相按成分分类的定量检测方法 |
CN102954903B (zh) * | 2011-08-22 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 锗硅薄膜监控片的制备方法及采用该片进行监控的方法 |
CN104603596B (zh) * | 2012-09-04 | 2016-11-16 | 富士通株式会社 | 取样夹具、定量分析方法以及分析系统 |
CN111400644B (zh) * | 2020-03-17 | 2020-12-25 | 北京三维天地科技股份有限公司 | 一种用于实验室分析样品的计算处理方法 |
Citations (2)
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US6519543B1 (en) * | 2000-05-09 | 2003-02-11 | Agere Systems Inc. | Calibration method for quantitative elemental analysis |
US7314513B1 (en) * | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
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Patent Citations (2)
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US6519543B1 (en) * | 2000-05-09 | 2003-02-11 | Agere Systems Inc. | Calibration method for quantitative elemental analysis |
US7314513B1 (en) * | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
Non-Patent Citations (4)
Title |
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C. Huyghebaert et al..Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation.《Applied Surface Science》.2004,(第231-232期),708-712. * |
JP特开平5-82443A 1993.04.02 |
M. H. Liao, et al.The intermixing and strain effects on electroluminescence of SiGe dots.《JOURNAL OF APPLIED PHYSICS》.2007,第102卷(第5期),053520. * |
T. Tezuka, et al..Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction.《APPLIED PHYSICS LETTERS》.2001,第79卷(第12期),1798-1800. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US12092510B2 (en) | 2020-09-03 | 2024-09-17 | Changxin Memory Technologies, Inc. | Weighing device |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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