CN102013420A - Semiconductor encapsulating structure and encapsulating method thereof - Google Patents

Semiconductor encapsulating structure and encapsulating method thereof Download PDF

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Publication number
CN102013420A
CN102013420A CN2009101619395A CN200910161939A CN102013420A CN 102013420 A CN102013420 A CN 102013420A CN 2009101619395 A CN2009101619395 A CN 2009101619395A CN 200910161939 A CN200910161939 A CN 200910161939A CN 102013420 A CN102013420 A CN 102013420A
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Prior art keywords
bonding wire
finger
wafer
bearing part
connection pad
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CN2009101619395A
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CN102013420B (en
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林圣惟
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

The invention relates to a semiconductor encapsulating structure and an encapsulating method thereof. The semiconductor encapsulating structure comprises a wafer, a bearing piece, welding lines and sealing glue, wherein the wafer comprises a gasket, the bearing piece comprises fingers and has an upper surface and a lower surface which are opposite to each other, the upper surface bears the wafer, the welding lines extend to the gasket from the fingers and are used for electrically connecting the wafer to the bearing piece, the projection of the welding lines on the upper surface of the bearing piece is a projection part which forms a preset included angle between the tangential direction at the fingers and a straight line penetrating through the fingers and the gasket, and the sealing glue wraps the wafer and the welding lines and covers the bearing piece. The semiconductor encapsulating structure and the encapsulating method avoid short circuit between the welding lines.

Description

Semiconductor packaging structure and method for packing thereof
Technical field
The present invention relates to a kind of method for packaging semiconductor, relate more specifically to a kind of welding wire joint structure of semiconductor packaging structure, wherein can not cause line short between bonding wire and the bonding wire.
Background technology
With reference to figure 1, in the semiconductor packaging structure processing procedure, the technology of wire bonds method is applied to bonding wire 20 electric connection between the finger 34 (finger) of connection pad (pad) 32 of wafer 10 and substrate 12 widely.Line connection process mainly is based on gold thread, but copper cash has advantage cheaply.
Referring to figs. 2 to Fig. 6, shown existing forward wire bonds (forward wire bonding) processing procedure.With reference to figure 2, the capillary 18 of wire bonder 16 provides bonding wire 20.A line end 23 of described bonding wire 20 is engaged in the connection pad 32 of wafer, to form first solder joint (first bond) 21.With reference to figure 3, described capillary 18 is risen to predetermined altitude.With reference to figure 4, described capillary 18 forms arc with described bonding wire 20.The length of required bonding wire 20 is sent automatically by described wire bonder 16.With reference to figure 5, another line end 25 of described bonding wire 20 is engaged in the finger 34 of substrate, to form second solder joint (second bond) 26.With reference to figure 6, the other parts 20 ' of described bonding wire 20 are separated with second solder joint 26, thereby form existing welding wire joint structure.
To Figure 11, shown existing reverse wire bonds (reverse wire bonding) processing procedure with reference to figure 7.With reference to figure 7, the capillary 18 of wire bonder 16 provides bonding wire 20.A line end of described bonding wire 20 is engaged in the finger 34 of substrate, to form first solder joint 21.With reference to figure 8, described capillary 18 is risen to predetermined altitude.With reference to figure 9, described capillary 18 forms arc with described bonding wire 20.The length of required bonding wire 20 is sent automatically by described wire bonder 16.With reference to Figure 10, another line end 25 of described bonding wire 20 is engaged in the connection pad 32 of wafer, to form second solder joint 26.With reference to the 11st figure, the other parts 20 ' of described bonding wire 20 are separated with second solder joint 26, thereby form existing welding wire joint structure.
With reference to Figure 12, shown the floor map of existing welding wire joint structure forward or backwards.With reference to Figure 13, no matter be existing forward welding wire joint structure or reverse welding wire joint structure, when the formation processing procedure of follow-up sealing 38, if being many, closely arranges in regular turn described bonding wire 20, and described bonding wire 20 is a straight line in the projection section of described substrate 12, then may be because of sealing mould stream 50 52 problems of breasting the tape (wire sweep problem), and then cause line short (short circuit).
Therefore, the welding wire joint structure that a kind of semiconductor packaging structure need be provided is arranged, can solve aforesaid problem.
Summary of the invention
In order to address the above problem, the invention provides a kind of semiconductor packaging structure and method for packing thereof.
The invention provides a kind of semiconductor packaging structure, this semiconductor packaging structure comprises wafer, bearing part, bonding wire and sealing.Described wafer comprises connection pad.Described bearing part comprises finger, and has upper surface and lower surface, and described lower surface is relative with described upper surface, and wherein said upper surface carries described wafer.Described bonding wire extends to described connection pad by described finger, be used for described wafer is electrically connected to described bearing part, wherein said bonding wire is projected as projection section what the upper surface of described bearing part formed, and described projection section is in the tangential direction at described finger place and pass between the straight line of described finger and described connection pad and have predetermined angle.Described wafer of described sealant covers and described bonding wire, and cover described bearing part.
The present invention also provides a kind of method for packaging semiconductor, this method for packaging semiconductor comprises the following steps: to be provided with wafer on bearing part, wherein said wafer comprises first connection pad, and described bearing part comprises first finger, described bearing part has upper surface and lower surface, described lower surface is relative with described upper surface, and described upper surface carries described wafer; Provide first bonding wire by capillary, described first bonding wire comprises first line end and second line end; First line end of described first bonding wire is engaged in described first finger, to form first solder joint; Described capillary is moved to described first connection pad by described first finger, thereby make described first bonding wire extend to described first connection pad by described first finger, wherein said first bonding wire is projected as projection section what the upper surface of described bearing part formed, described projection section is in the tangential direction at the described first finger place and pass between the straight line of described first finger and described first connection pad and have predetermined angle, and wherein said predetermined angle is between 5 degree are spent with 60; Second line end of described bonding wire is engaged in described first connection pad, to form second solder joint; And the formation sealing, be used to coat described wafer and described first bonding wire and cover described bearing part, make described sealing, described wafer and described bearing part form semiconductor packaging structure.
Bonding wire of the present invention is opposite with the direction of advance of described sealing mould stream at the bending direction of the projection section of the upper surface formation of described bearing part, the margin of safety of the back of breasting the tape can be provided, even the problem of breasting the tape still can not cause line short between described bonding wire and the bonding wire.In addition, the bending direction of the projection section of bonding wire of the present invention is opposite with the bending direction of described projection section, can increase the spacing between the described bonding wire, even the problem of breasting the tape still can not cause line short between described bonding wire and the bonding wire.In addition, the bending direction of the projection section of bonding wire of the present invention can be identical with the bending direction of described projection section, thereby linear projection's part rewiring of prior art can be become the curve projection part.
For allow state on the present invention with other purpose, feature and advantage can be more obvious, hereinafter with conjunction with figs., be described in detail below.
Description of drawings
Fig. 1 is the generalized section of the welding wire joint structure of prior art;
Fig. 2 to Fig. 6 is the generalized section of the forward wire bonds processing procedure of prior art;
Fig. 7 to Figure 11 is the generalized section of the reverse bonding wire connection process of prior art;
Figure 12 is the floor map of the welding wire joint structure of prior art;
Figure 13 is the floor map of the welding wire joint structure of prior art, has shown that sealing is formed;
Figure 14 is the generalized section of the semiconductor packaging structure of one embodiment of the present invention;
Figure 15 is the floor map of the semiconductor packaging structure of described execution mode of the present invention;
Figure 16 is the amplification floor map of bonding wire of the semiconductor packaging structure of described execution mode of the present invention;
Figure 17 is the generalized section of the method for packaging semiconductor of another embodiment of the invention;
Figure 18 is the generalized section of the method for packaging semiconductor of another execution mode of the present invention;
Figure 19 to Figure 25 is the section and the floor map of the method for packaging semiconductor of one embodiment of the present invention.
The primary clustering symbol description
10 wafers, 12 substrates
16 wire bonders, 18 capillaries
20 bonding wires, 20 ' other parts
21 first solder joints
23 line ends, 25 line ends
26 second solder joints, 32 connection pads
34 fingers, 50 sealing moulds stream
52 100 semiconductor packaging structures of breasting the tape
100 ' semiconductor packaging structure
100 " semiconductor packaging structure 102 wire bonders
110 wafers, 110 ' wafer
112 bearing part 112a substrates
112a ' substrate 112b follows closely frame
113 upper surfaces, 114 lower surfaces
115 active surfaces, 116 back sides
117 run through opening 118 capillaries
120 bonding wire 120a bonding wires
120b bonding wire 121 first solder joints
123 line ends, 125 line ends
126 second solder joints, 132 connection pads
132a connection pad 132b connection pad
134 ' finger 134 " the pin connection pad
134a finger 134b finger
138 sealing 140a projection section
140b projection section 142a straight line
142b straight line 144 tangential directions
150 sealing moulds flow 156 electrical contacts
160 moulds, 162 hand-holes
164 taps
Embodiment
With reference to Figure 14, shown the semiconductor packaging structure 100 of one embodiment of the present invention.Described semiconductor packaging structure 100 comprises wafer 110, bearing part 112, bonding wire 120a and sealing 138.Described wafer 110 comprises connection pad (pad) 132a.Described bearing part 112 comprises finger (finger) 134a (for example aluminium finger or copper finger), and has upper surface 113 and lower surface 114, and described lower surface 114 is relative with described upper surface 113.The described wafer 110 of described upper surface 113 carryings, and described finger 134a is positioned on the described upper surface 113.In the present embodiment, described wafer 110 have active surface 115 and with these active surface 115 opposing backside surface 116, described connection pad 132a is positioned on the described active surface 115.The described back side 116 is positioned on the upper surface 113 of described bearing part 112.Described sealing 138 coats described wafer 110 and described bonding wire 120a, and covers described bearing part 112.
With reference to Figure 15, described bonding wire 120a extends to described connection pad 132a by described finger 134a, is used for described wafer 110 is electrically connected to described bearing part 112.Described bonding wire 120a is projected as projection section 140a what the upper surface 113 of described bearing part 112 formed.Straight line 142a is the straight line that passes described finger 134a and described connection pad 132a.With reference to Figure 16, described projection section 140a has predetermined angle theta between the tangential direction 144 at described finger 134a place and described straight line 142a 1Described predetermined angle theta 1Greater than 0 degree.Preferably, described predetermined angle theta 1Between about 5 degree and about 60 degree.The profile of described projection section 140a is a J-shaped, and causes by mobile capillary.
Described wafer 110 also comprises at least one connection pad 132b, and this connection pad 132b is adjacent to described connection pad 132a.Described bearing part 112 also comprises at least one finger 134b, and this finger 134b is adjacent to described finger 134b.Described semiconductor packaging structure 100 also comprises at least one bonding wire 120b, and described bonding wire 120b extends to described connection pad 132b by described finger 134b, also is used for described wafer 110 is electrically connected to described bearing part 112.Described bonding wire 120b is projected as projection section 140b what the upper surface 113 of described bearing part 112 formed.Straight line 142b is the straight line that passes described finger 134b and described connection pad 132b.Described projection section 140b also has predetermined angle between the tangential direction at described finger 134b place and described straight line 142b.Described predetermined angle is greater than 0 degree.Preferably, described predetermined angle is also between about 5 degree and about 60 degree.
In the present embodiment, the bending direction of described projection section 140a is opposite with the bending direction of described projection section 140b, thereby increases the spacing (pitch) between more described bonding wire 120a, the 120b.In another embodiment, the bending direction of described projection section 140b can be identical with the bending direction of described projection section 140b, thereby linear projection's part rewiring of prior art can be become the curve projection part.
With reference to Figure 14, in the present embodiment, described bearing part 112 is substrate 112a again.The line end of described bonding wire 120a is electrically connected at the connection pad 132a of described wafer 110, and another line end of described bonding wire 120a is electrically connected at the finger 134a of described substrate 112a.The connection pad 132a of described wafer 110 is electrically connected at the circuit (figure does not show) of described wafer.Described substrate 112a comprises outside electrical contact 156, and this outside electrical contact 156 is positioned on the described lower surface 114.
With reference to Figure 17, in another embodiment, welding wire joint structure of the present invention can be applicable to the groove packaging structure of (cavity down) type downwards, W type ball lattice array packaging structure (WBGApackage) for example, another kind of semiconductor packaging structure 100 ' just of the present invention.Described semiconductor packaging structure 100 ' is similar to described semiconductor packaging structure 100 substantially, and both main difference is that the active surface 115 of described wafer 110 ' is positioned on the upper surface 113 of described bearing part 112 (for example substrate 112a ').Described substrate 112a ' comprises and runs through opening 117 that this runs through opening 117 and extends to described lower surface 114 by described upper surface 113.Described bonding wire 120 passes the described opening 117 that runs through, a line end of described bonding wire 120 is electrically connected at the connection pad 132 of described wafer 110 ', another line end of described bonding wire 120 is electrically connected at the finger 134 ' of described substrate 112a ', and described finger 134 ' is positioned on the described lower surface 114.The connection pad 132 of described wafer 110 ' is electrically connected at the circuit (figure does not show) of described wafer.Described substrate 112a ' comprises outside electrical contact 156, and this outside electrical contact 156 is positioned on the described lower surface 114.
With reference to Figure 18, in another execution mode, welding wire joint structure of the present invention can be applicable to have the packaging structure of nail frame, another semiconductor packaging structure 100 just of the present invention ".Described semiconductor packaging structure 100 " be similar to described semiconductor packaging structure 100 substantially, both main difference is that described bearing part 112 for nail frame (leadframe) 112b, wherein uses described pin connection pad 134 " the described finger 134 of replacement.Described pin connection pad 134 " be arranged on the described nail frame 112b.Described pin connection pad 134 " electrically connect with described bonding wire 120.
Referring to figures 19 through Figure 25, shown the method for packaging semiconductor of a kind of embodiment of the present invention.With reference to Figure 19, wafer 110 is set on bearing part 112, wherein said wafer 110 have active surface 115 and with these active surface 115 opposing backside surface 116, described wafer 110 comprises connection pad 132 (for example aluminium connection pad or copper connection pad), described connection pad 132 is positioned on the described active surface 115, described bearing part 112 have upper surface 113 and with these upper surface 113 opposing lower surface 114, described bearing part 112 comprises finger 134 (for example aluminium finger or copper finger), described finger 134 is positioned on the described upper surface 113, and the back side 116 of described wafer 110 is positioned on the upper surface 113 of described bearing part.
With reference to Figure 20, in the present embodiment, the capillary 118 of wire bonder 102 provides at least one bonding wire 120a.Then, the line end 123 of described bonding wire 120a is engaged in finger 134a, to form first solder joint 121.With reference to Figure 21, described capillary 118 is moved to described connection pad 132a by described finger 134a, that is to say that described capillary 118 forms arc with described bonding wire 120a, thereby make described bonding wire 120a extend to described connection pad 132a by described finger 134a.The length of required bonding wire 120a is sent automatically by described wire bonder 102.Described bonding wire 120a is projected as projection section 140a what the upper surface 113 of described bearing part 112 formed, straight line 142a is the straight line that passes described finger 134a and described connection pad 132a, described projection section 140a has predetermined angle between the tangential direction 144 at described finger 134a place and described straight line 142a, as shown in figure 16.With reference to Figure 22, another line end 125 of described bonding wire 120a is bonded on the described connection pad 132a, forming second solder joint 126, thereby finish reverse bonding wire connection process of the present invention, and form welding wire joint structure of the present invention.In addition, can't bear the impulsive force of wire bonds for fear of the connection pad 132a of described wafer 110, can be on described connection pad 132a pre-configured globular part (figure does not show), the line end 125 with described bonding wire 132a joins the globular part that is positioned on the described connection pad 132a to then.
With reference to Figure 23, many bonding wire 120a, 120b are engaged between described wafer 110 and the described bearing part 112, wherein these bonding wires 120a, 120b arrange in regular turn, and described bonding wire 120a is positioned at the outermost of many bonding wire 120b.When the formation processing procedure of follow-up sealing, described bonding wire 120a can be subjected to the bigger impact of sealing mould stream.
With reference to Figure 24, form sealing 138, be used to coat described wafer 110 and described bonding wire 120a, 120b, and cover described bearing part 112, make described sealing 138, described wafer 110 and described bearing part 112 form semiconductor packaging structure 100, as shown in figure 16.The formation of described sealing 138 comprises the following steps: to provide mould 160, and this mould 160 has hand-hole 162 and tap 164.Sealing 138 is entered by described hand-hole 162 and is left by described tap 164, to form sealing mould stream 150.Remove described mould 160, and solidify described sealing 138.In the present embodiment, described hand-hole 162 is positioned at the side of described mould 160, and therefore described sealing 138 is by the side encapsulating of described mould 160.In another embodiment, described hand-hole 162 is positioned at the top of described mould 160, and therefore described sealing 138 also can be by the top encapsulating of described mould 160.
With reference to Figure 25, because described bonding wire 120a is positioned at the outermost of more described bonding wire 120b, therefore described bonding wire 120a can be subjected to the bigger impacts of sealing mould stream 150.Bonding wire 120a of the present invention is opposite with the direction of advance of described sealing mould stream 150 at the bending direction of the projection section 140a of the upper surface 113 of described bearing part 112, margin of safety after breasting the tape can be provided, even the problem of breasting the tape still can not cause line short between described bonding wire 120a and the bonding wire 120b.In addition, the bending direction of the projection section 140a of bonding wire 120a of the present invention is opposite with the bending direction of described projection section 140b, the problem of breasting the tape can increase the spacing between described bonding wire 120a, the 120b, even still can not cause line short between described bonding wire 120a and the bonding wire 120b.In addition, the bending direction of the projection section 140b of bonding wire 120b of the present invention can be identical with the bending direction of described projection section 140b, thereby linear projection's part rewiring of prior art can be become the curve projection part.
Though the present invention discloses with aforementioned embodiments, these execution modes are not to be used to limit the present invention, any the technical field of the invention technical staff, without departing from the spirit and scope of the present invention, when doing various changes and modification.Therefore protection scope of the present invention should be looked the scope that accompanying Claim defines and is as the criterion.

Claims (13)

1. semiconductor packaging structure, this semiconductor packaging structure comprises:
Wafer, this wafer comprises first connection pad;
Bearing part, this bearing part comprise first the finger and have upper surface and lower surface, described lower surface is relative with described upper surface, wherein said upper surface carries described wafer;
First bonding wire, this first bonding wire extends to described first connection pad by described first finger, be used for described wafer is electrically connected to described bearing part, wherein said first bonding wire is projected as first projection section what the upper surface of described bearing part formed, first straight line is the straight line that passes described first finger and described first connection pad, described first projection section has the first predetermined angle between the tangential direction at the described first finger place and described first straight line, the wherein said first predetermined angle is between 5 degree are spent with 60; And
Sealing, the described wafer of this sealant covers and first bonding wire also cover described bearing part.
2. semiconductor packaging structure according to claim 1, wherein said bonding wire comprises first line end and second line end, and described first line end is engaged in described first finger, to form the first solder joint part, and described second line end is engaged in described first connection pad, to form the second solder joint part.
3. semiconductor packaging structure according to claim 1, wherein:
Described wafer also comprises at least one second connection pad;
Described bearing part also comprises at least one second finger, and this second finger is adjacent to described first finger; And
Described semiconductor packaging structure also comprises at least one the second bonding wires, described second bonding wire extends to described second connection pad by described second finger, described second bonding wire is projected as second projection section what the upper surface of described bearing part formed, second straight line is passed described second finger and described second connection pad, and described second projection section has the second predetermined angle between the tangential direction at described second finger place and described second straight line.
4. semiconductor packaging structure according to claim 1, the bending direction of wherein said first projection section is opposite with the bending direction of described second projection section.
5. semiconductor packaging structure according to claim 1, the bending direction of wherein said first projection section is identical with the bending direction of described second projection section.
6. semiconductor packaging structure according to claim 3, the wherein said second predetermined angle is between 5 degree and 60 degree.
7. semiconductor packaging structure according to claim 1, wherein said first projection section is a J-shaped.
8. semiconductor packaging structure according to claim 1, wherein said wafer have active surface and with this active surface opposing backside surface, described first connection pad is positioned on the described active surface.
9. method for packaging semiconductor, this method for packaging semiconductor comprises the following steps:
Wafer is set on bearing part, and wherein said wafer comprises first connection pad, and described bearing part comprise first the finger, described bearing part has upper surface and lower surface, described lower surface is relative with described upper surface, described upper surface carries described wafer;
Provide first bonding wire by capillary, described first bonding wire comprises first line end and second line end;
First line end of described first bonding wire is engaged in described first finger, to form first solder joint;
Described capillary is moved to described first connection pad by described first finger, thereby make described first bonding wire extend to described first connection pad by described first finger, wherein said first bonding wire forms projection section at the upper surface of described bearing part, described projection section is in the tangential direction at the described first finger place and pass between the straight line of described first finger and described first connection pad and have predetermined angle, and wherein said predetermined angle is between 5 degree are spent with 60;
Second line end of described bonding wire is engaged in described first connection pad, to form second solder joint; And
Form sealing, be used to coat described wafer and described first bonding wire and cover described bearing part, make described sealing, described wafer and described bearing part form semiconductor packaging structure.
10. method for packaging semiconductor according to claim 9, wherein before the step that forms described sealing, described method for packaging semiconductor also comprises the following steps:
Between described wafer and described bearing part, wherein said first bonding wire and second bonding wire are arranged in regular turn with many second wire bonds, and described first bonding wire is positioned at the outermost of described many second bonding wires.
11. method for packaging semiconductor according to claim 9, the formation of wherein said sealing comprises the following steps:
Mould is provided, and this mould has hand-hole and tap;
Sealing is entered by described hand-hole and leave, to form sealing mould stream by described tap; And
Remove described mould and solidify described sealing.
12. method for packaging semiconductor according to claim 11, the bending direction of wherein said first projection section is opposite with the direction of advance of described sealing mould stream.
13. described method for packaging semiconductor according to claim 9, wherein said first bonding wire is a J-shaped in the projection section of the upper surface of described bearing part.
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TWI726427B (en) * 2019-09-27 2021-05-01 友達光電股份有限公司 Device substrate

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