CN102012559A - Reduced capacitance display element - Google Patents
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- CN102012559A CN102012559A CN201010608389XA CN201010608389A CN102012559A CN 102012559 A CN102012559 A CN 102012559A CN 201010608389X A CN201010608389X A CN 201010608389XA CN 201010608389 A CN201010608389 A CN 201010608389A CN 102012559 A CN102012559 A CN 102012559A
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Abstract
A display element, such as an interferometric modulator, comprises a transparent conductor configured as a first electrode and a movable mirror configured as a second electrode. Advantageously, the partial reflector is positioned between the transparent conductor and the movable mirror. Because the transparent conductor serves as an electrode, the partial reflector does not need to be conductive. Accordingly, a greater range of materials may be used for the partial reflector. In addition, a transparent insulative material, such as a dielectric, may be positioned between the transparent conductor and the partial reflector in order to decrease a capacitance of the display element without changing a gap distance between the partial reflector and the movable mirror. Thus, a capacitance of the display element may be reduced without changing the optical characteristics of the display element.
Description
The application is that application number is PCT/US2005/032020, the applying date is on September 8th, 2005, priority date is on September 27th, 2004, on February 4th, 2005 and on June 17th, 2005, denomination of invention for the PCT of " display element " application with the electric capacity that reduces enter country's stage after application number be dividing an application of 200580032119.6 Chinese invention patent application.
Technical field
The field of the invention relate to MEMS (micro electro mechanical system) (microelectromechanical system, MEMS).
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, activator appliance and electronic component.Can use deposition, etching and/or other etching remove substrate and/or deposited material layer part or add layer and produced micromechanical component with a micro fabrication that forms electric installation and electromechanical assembly.One type MEMS device is called interferometric modulator.As used herein, term interferometric modulator or interferometric light modulator refer to a kind of use principle of optical interference and optionally absorb and/or catoptrical device.In certain embodiments, interferometric modulator can comprise the pair of conductive plate, and one of them or both may be transparent in whole or in part and/or be had reflectivity, and can carry out relative motion when applying suitable electric signal.In a particular embodiment, a plate can comprise the fixed bed that is deposited on the substrate, and another plate can comprise the metallic film that is separated with fixed bed by air gap.As described in more detail, plate can change the optical interference that is incident on the light on the interferometric modulator with respect to the position of another plate.These devices have the application of wide scope, and in this technology, utilize and/or revise these types of devices characteristic make its feature to be used to improve existing product and to create still undeveloped new product by excavation, will be useful.
Summary of the invention
System of the present invention, method and apparatus respectively have some aspects, and the attribute of its expectation all not only is responsible in wherein any single aspect.Under the situation that does not limit the scope of the invention, existing with its outstanding feature of brief discussion.Consider after this argumentation, and especially be entitled as after the part of " embodiment " how to provide the advantage that is better than other display device with understanding feature of the present invention in reading.
In one embodiment, display element comprises transparent in fact conductive layer, partial reflection insulator and removable reflection horizon, described partial reflection insulator is between conductive layer and removable reflection horizon, and the voltage that wherein is applied between conductive layer and the removable reflection horizon causes moving of removable reflection horizon.
In another embodiment, a kind of method of making display element, it forms transparent in fact conductive layer; Form the partial reflection insulator; With the removable reflection horizon of formation, described partial reflection insulator is between conductive layer and removable reflection horizon, and the voltage that wherein is applied between conductive layer and the removable reflection horizon causes moving of removable reflection horizon.
In another embodiment, a kind of display element, it comprises the member that is used to conduct electricity, described conductive member is transparent in fact; The member that is used for partial reflection, described partial reflection member insulate; Movably be used to the member that reflects, wherein said partial reflection member is between conductive layer and removable reflecting member, and the voltage that wherein is applied between conductive member and the removable reflecting member causes moving of removable reflecting member.
In another embodiment, a kind of display system, it comprises the display that comprises a plurality of display elements.In one embodiment, each of described display element comprises transparent in fact conductive layer, partial reflection insulator and removable reflection horizon, described partial reflection insulator is between conductive layer and removable reflection horizon, and the voltage that wherein is applied between conductive layer and the removable reflection horizon causes moving of removable reflection horizon.In one embodiment, described display system further comprises the processor with the display electric connection, and described processor is configured to image data processing; With with the memory storage of processor electric connection.
In another embodiment, a kind of display element comprises transparent in fact conductive layer; Dielectric layer; Partially reflecting layer, wherein dielectric layer is between conductive layer and partially reflecting layer and removable reflection horizon, and the voltage that wherein is applied between conductive layer and the removable reflection horizon causes moving of removable reflection horizon.
In another embodiment, a kind of display element, it comprises the member that is used to conduct electricity, described conductive member is transparent in fact; The member that is used to insulate; The member that is used for partial reflection, wherein said insulating component is between conductive member and partial reflection member, movably be used to the member that reflects, the voltage that wherein is applied between conductive member and the removable reflecting member causes moving of removable reflecting member.
In another embodiment, a kind of method of making display element, it comprises the conductive layer that formation is transparent in fact; Form dielectric layer; Form partially reflecting layer, described dielectric layer is between conductive layer and partially reflecting layer and form removable reflection horizon, and the voltage that wherein is applied between conductive layer and the removable reflection horizon causes moving of removable reflection horizon.
In another embodiment, a kind of display system, it comprises the display that comprises a plurality of display elements.In one embodiment, each of described display element comprises transparent in fact conductive layer; Dielectric layer; Partially reflecting layer, wherein said reflection horizon is between conductive layer and partially reflecting layer; With removable reflection horizon, the voltage that wherein is applied between conductive layer and the removable reflection horizon causes moving of removable reflection horizon.In one embodiment, described display system further comprises the processor with the display electric connection, and described processor is configured to image data processing; With with the memory storage of processor electric connection.
In another embodiment, a kind of display element comprises transparent in fact conductive layer; Dielectric layer; Partially reflecting layer, described dielectric layer is between conductive layer and partially reflecting layer; With removable reflection horizon, separate with partially reflecting layer by the gap in described removable reflection horizon, and wherein when display element was in state of activation, described display element presented white to the beholder, and when display element was in the pine oil state, described display element presented non-white to the beholder.
Description of drawings
Fig. 1 is the isometric view of a part of describing an embodiment of interferometric modulator display, and wherein the removable reflection horizon of first interferometric modulator is in slack position, and the removable reflection horizon of second interferometric modulator is in active position.
Fig. 2 is the system block diagram that an embodiment of the electronic installation that 3 * 3 interferometric modulator displays are arranged is incorporated in explanation into.
Fig. 3 is that the removable mirror position of an one exemplary embodiment of interferometric modulator of Fig. 1 is to the figure of applying voltage.
Fig. 4 is the explanation that can be used for driving one group of row and column voltage of interferometric modulator display.
An exemplary frame of display data in 3 * 3 interferometric modulator displays of Fig. 5 A key diagram 2.
Fig. 5 B explanation can be used for an exemplary sequential chart of the row and column signal that the frame to Fig. 5 A writes.
Fig. 6 A and 6B are the system block diagrams that the embodiment of the visual display unit that comprises a plurality of interferometric modulators is described.
Fig. 7 A is the xsect of the device of Fig. 1.
Fig. 7 B is the xsect of the alternate embodiment of interferometric modulator.
Fig. 7 C is the xsect of another alternate embodiment of interferometric modulator.
Fig. 7 D is the xsect of the another alternate embodiment of interferometric modulator.
Fig. 7 E is the xsect of the extra alternate embodiment of interferometric modulator.
Fig. 8 is the xsect with exemplary interferometric modulator of transparent conductor.
Fig. 9 is exemplary cross-sectional view with interferometric modulator of the electric capacity that reduces.
Figure 10 is another exemplary cross-sectional view with interferometric modulator of the electric capacity that reduces.
Embodiment
Below describe in detail at some specific embodiment of the present invention.Yet the present invention can implement by many different modes.Describe in the content referring to accompanying drawing at this, all same sections are represented with same numeral in the accompanying drawing.As will be understood from the following description, though described embodiment may be implemented in be configured to show motion (for example, video) still fixing (for example, rest image) no matter and literal or any device of the image of picture in.More particularly, expect that described embodiment may be implemented in the multiple electronic installation or related with multiple electronic installation, described multiple electronic installation is (but being not limited to) mobile phone for example, wireless device, personal digital assistant (PDA), portable or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game console, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example, mileometer display etc.), Cockpit Control Unit and/or display, the display of camera view (for example, the display of rear view camera in the vehicle), the electronics photograph, electronic bill-board or direction board, projector, building structure, packing and the aesthetic structures display of the image of a jewelry (for example, at).Have in the non-display application that MEMS device with the similar structure of describing herein of device also can be used for electronic switching device for example.
Explanation comprises the embodiment of an interferometric modulator display of interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (" connection " or " unlatching ") state, display element reflexes to the user with the major part of incident visible light.When in dark (" disconnection " or " closing ") state following time, display element reflexes to the user with few incident visible light.Decide according to embodiment, can put upside down the light reflectance properties of " connection " and " disconnection " state.The MEMS pixel can be configured and mainly reflect at selected color place, thereby allows the colour except white and black displays to show.
Fig. 1 is an isometric view of describing two neighbors in a series of pixels of visual displays, and wherein each pixel comprises the MEMS interferometric modulator.In certain embodiments, interferometric modulator display comprises the delegation/column array of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and it is positioned to have at least one variable-sized resonant optical mode chamber at a distance of variable and controllable distance with formation each other.In one embodiment, can move one of described reflection horizon between the two positions.In primary importance (being called slack position herein), removable reflection horizon is positioned to apart from the relatively large distance in fixed part reflection horizon.In the second place (being called active position herein), removable reflection horizon is positioned to more closely adjacent described partially reflecting layer.Decide position on removable reflection horizon, interferes longways or mutually mutually from the incident light of described two layers reflection with disappearing, thereby be each pixel generation total reflection state or non-reflective state.
Institute's drawing section branch of pel array comprises two adjacent interferometric modulator 12a and 12b among Fig. 1.In the interferometric modulator 12a of left side, illustrate that removable reflection horizon 14a is in the slack position at the Optical stack 16a preset distance place that comprises partially reflecting layer.In the interferometric modulator 12b of right side, illustrate that removable reflection horizon 14b is in the active position that is adjacent to Optical stack 16b.
Generally include some fused layers (fused layer) as Optical stack 16a and 16b (being referred to as Optical stack 16) that this paper quoted, described fused layers can comprise the electrode layer of tin indium oxide (ITO) for example, the partially reflecting layer and the transparent dielectric of for example chromium.Therefore, Optical stack 16 be conduction, partially transparent and partial reflection, and can above-mentioned layer one or more depositing on the transparent substrates 20 be made by (for example).In certain embodiments, described layer is patterned to become a plurality of parallel bands, and as hereinafter further describing, can form column electrode in display device. Removable reflection horizon 14a, 14b can form the series of parallel band (vertical with column electrode 16a, 16b) of depositing metal layers (one or more layers), and described layer metal deposition is at post 18 and be deposited on the top of the intervention expendable material between the post 18.When expendable material was removed in etching, removable reflection horizon 14a, 14b passed through the gap of being defined 19 and separate with Optical stack 16a, 16b.For example the material of the highly conductive of aluminium and reflection can be used for reflection horizon 14, and these bands can form the row electrode in display device.
Do not applying under the voltage condition, chamber 19 is retained between removable reflection horizon 14a and the Optical stack 16a, and wherein removable reflection horizon 14a is in the mechanical relaxation state, and is illustrated as pixel 12a among Fig. 1.Yet when potential difference (PD) was applied to selected row and column, the capacitor that is formed on the infall of the column electrode at respective pixel place and row electrode became charged, and electrostatic force is pulled in described electrode together.If voltage is enough high, so removable reflection horizon 14 is out of shape and is forced to against Optical stack 16.Dielectric layer (not shown in this figure) in the Optical stack 16 can prevent the separating distance between short circuit and key- course 14 and 16, and is illustrated as the pixel 12b on right side among Fig. 1.No matter the polarity of the potential difference (PD) that is applied how, show all identical.In this way, may command reflective pixel state is similar to employed row in conventional LCD and other display technique/row in many aspects and activates row/row activation of non-reflective pixel state.
Fig. 2 uses the exemplary processes and the system of interferometric modulator array in display application to 5B explanation.
Fig. 2 is the system block diagram that explanation can be incorporated an embodiment of the electronic installation that each side of the present invention is arranged into.In described one exemplary embodiment, described electronic installation comprises processor 21, its can be any general purpose single-chip or multicore sheet microprocessor (for example ARM,
Pro, 8051,
), or any special microprocessor (for example digital signal processor, microcontroller or programmable gate array).As way conventional in this technology, processor 21 can be configured to carry out one or more software modules.Except executive operating system, described processor can be configured to carry out one or more software applications, comprises web browser, telephony application, e-mail program or any other software application.
In one embodiment, processor 21 also is configured to be communicated with array driver 22.In one embodiment, described array driver 22 comprises row driver circuits 24 and the column driver circuit 26 that signal is provided to display array or panel 30.The xsect of in Fig. 2, showing array illustrated in fig. 1 with line 1-1.For the MEMS interferometric modulator, OK/the row activated protocol can utilize the hysteresis property of these devices illustrated in fig. 3.May need the potential difference (PD) of (for example) 10 volts to impel displaceable layers to be deformed into state of activation from relaxed state.Yet, when voltage when described value reduces, displaceable layers is kept its state when voltage drop is returned below 10 volts.In the one exemplary embodiment of Fig. 3, displaceable layers is just lax fully when voltage drops to below 2 volts.Therefore have about 3 to 7V voltage range in example illustrated in fig. 3, have the window of the voltage that applies in described scope, device all is stable in relaxed state or state of activation in described window.This window is referred to herein as " lag windwo " or " stability window ".For the display array of hysteresis characteristic with Fig. 3, can design row/row activated protocol and make and to be expert at during the gating, gating capable in pixel to be activated be exposed to about 10 volts voltage difference, and pixel to be relaxed is exposed to the voltage difference that lies prostrate near zero.After gating, described pixel is exposed to about 5 volts steady state voltage official post and gets it and keep the gating of being expert at and make in its residing any state.In this example, each pixel experiences the potential difference (PD) in " stability window " of 3-7 volt after being written into.This feature makes pixel design illustrated in fig. 1 activate or lax being pre-stored in all is stable under the state identical apply under the voltage conditions.Because each pixel of interferometric modulator (activating or relaxed state no matter be in) is the capacitor that is formed by fixed reflector and mobile reflection horizon in essence, so can keep this steady state (SS) and almost inactivity consumption under the voltage in lag windwo.In essence, if the voltage that is applied is fixed, there is not electric current to flow in the pixel so.
In the typical case uses, can be by confirming that according to required group activation pixel in first row described group row electrode produces display frame.Then horizontal pulse is applied to row 1 electrode, thereby activates pixel corresponding to the alignment of being confirmed.Then change described group of confirmed row electrode with corresponding to required group activation pixel in second row.Then pulse is applied to row 2 electrodes, thereby activates suitable pixel in the row 2 according to confirmed row electrode.Row 1 pixel is not influenced by row 2 pulses, and maintains in the state that its 1 impulse duration of being expert at is set.Can be in a continuous manner the row of whole series be repeated this process to produce frame.Usually, come to refresh and/or upgrade described frame by repeat this process continuously with a certain requisite number purpose of per second frame with new video data.The row and column electrode that is used to drive pel array also is well-known and can uses in conjunction with the present invention with the agreement of the broad variety that produces display frame.
Fig. 4,5A and 5B explanation are used for forming a possible activated protocol of display frame on 3 * 3 arrays of Fig. 2.One group of possible row of the hysteresis curve that Fig. 4 explanation can be used for making pixel show Fig. 3 and row voltage level.In Fig. 4 embodiment, activate pixel and relate to suitable row are set at-V
Bias, and will suitably go and be set at+Δ V, its respectively can corresponding to-5 volts with+5 volts.Relax pixels is by following realization: will suitably be listed as and be set at+V
Bias, and will suitably go and be set at identical+Δ V, thereby on pixel, produce zero volt potential difference (PD).The voltage of going therein maintains in those row of zero volt, no matter row are in+V
BiasStill-V
Bias, all be stable in the pixel what initial residing state in office.Same as illustrated in fig. 4, will understand, can use the voltage that has with the opposite polarity polarity of above-mentioned voltage, for example, activate pixel and can relate to and being set at+V suitably being listed as
Bias, and will suitably go and be set at-Δ V.In this embodiment, the pine oil pixel is to realize by following manner: will suitably be listed as and be set at-V
Bias, and will suitably go and be set at identical-Δ V, thereby on pixel, produce zero volt potential difference (PD).Same as illustrated in fig. 4, will understand, can use the voltage that has with the opposite polarity polarity of above-mentioned voltage, for example, activate pixel and can relate to and being set at+V suitably being listed as
Bias, and will suitably go and be set at-Δ V.In this embodiment, the pine oil pixel realizes by following manner: will suitably be listed as and be set at-V
Bias, and will suitably go and be set at identical-Δ V, thereby on pixel, produce zero volt potential difference (PD).
Fig. 5 B is a sequential chart of showing a series of row and column signals of 3 * 3 arrays be applied to Fig. 2, the row and column signal of described series will produce the display layout that illustrates among Fig. 5 A, and the pixel that wherein is activated is non-reflection.Before the frame that illustrates in to Fig. 5 A write, pixel can be in any state, and in this example all the row all be in 0 volt, and all row all be in+5 volts.Under the voltage condition that these applied, all pixels all are stable in its existing activation or relaxed state.
In the frame of Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are activated.In order to realize this purpose, during be expert at 1 " line time (line time) ", row 1 and 2 are set at-5 volts, and row 3 are set at+5 volts.Because all pixels all are retained in the stability window of 3-7 volt, so this does not change the state of any pixel.Then use from 0 and be raised to 5 volts and return zero pulse gate capable 1.This has activated (1,1) and (1, the 2) pixel and (1, the 3) pixel that relaxed.Other pixel is all unaffected in the array.In order optionally to set row 2, row 2 are set at-5 volts, and row 1 and 3 are set at+5 volts.The same strobe that is applied to row 2 then will activate pixel (2,2) and relax pixels (2,1) and (2,3).Equally, other pixel is all unaffected in the array.Set row 3 similarly by row 2 and 3 being set at-5 volts and row 1 are set at+5 volts.Row 3 strobe sets row 3 pixels are as shown in Fig. 5 A.After frame was write, the row current potential was zero, and the row current potential can maintain+5 or-5 volts, and to follow display be stable in the layout of Fig. 5 A.To understand, same program can be used for the array of tens of or hundreds of row and columns.Also will should be appreciated that, the sequential, sequence and the level that are used to carry out the voltage that row and column activates can extensively change in the General Principle of above being summarized, and example above only is exemplary, and any activation voltage method all can be used with system and method described herein.
Fig. 6 A and 6B are the system block diagrams of the embodiment of explanation display device 40.Display device 40 can be (for example) cellular phone or mobile phone.Yet the same components of display device 40 or its be also various types of display device of illustrative examples such as TV and portable electronic device of version a little.
As described in this article, the display 30 of exemplary display device 40 can be and comprises bistable display (bi-stable display) in any one of interior multiple display.In other embodiments, well-known as the those skilled in the art, display 30 comprises the flat-panel monitor of for example aforesaid plasma, EL, OLED, STN LCD or TFT LCD, or the non-tablet display of CRT or other tube arrangements for example.Yet for the purpose of describing present embodiment, as described in this article, display 30 comprises interferometric modulator display.
The assembly of illustrative exemplary display device 40 embodiment among Fig. 6 B.Illustrated exemplary display device 40 comprises shell 41 and can comprise the partially enclosed at least additional assemblies in described shell 41.For instance, in one embodiment, exemplary display device 40 comprises network interface 27, and described network interface 27 comprises the antenna 43 that is coupled to transceiver 47.Transceiver 47 is connected to processor 21, and processor 21 is connected to regulates hardware 52.Regulate hardware 52 and can be configured to conditioning signal (for example, signal being carried out filtering).Regulate hardware 52 and be connected to loudspeaker 45 and microphone 46.Processor 21 also is connected to input media 48 and driver controller 29.Driver controller 29 is coupled to frame buffer 28 and is coupled to array driver 22, described array driver 22 and then be coupled to display array 30.According to particular exemplary display device 40 designing requirement, power supply 50 is provided to all component with power.
In an alternate embodiment, transceiver 47 can be replaced by receiver.In another alternate embodiment, network interface 27 can be replaced by the image source that can store or produce the view data that is sent to processor 21.For instance, described image source can be digital video disk (DVD) or contains the hard disk drive of view data, or produces the software module of view data.
In one embodiment, processor 21 comprises the operation with control exemplary display device 40 of microcontroller, CPU or logical block.Regulate hardware 52 and comprise amplifier and wave filter usually, being used to transferring signals to loudspeaker 45, and be used for from microphone 46 received signals.Adjusting hardware 52 can be the discrete component in the exemplary display device 40, maybe can be incorporated in processor 21 or other assembly.
Usually, array driver 22 receives formatted information and video data is reformatted as one group of parallel waveform from driver controller 29, and described waveform is applied to hundreds of and thousands of sometimes lead-in wires from the x-y picture element matrix of display with per second speed repeatedly.
In one embodiment, driver controller 29, array driver 22 and display array 30 are applicable to the display of any type described herein.For instance, in one embodiment, driver controller 29 is conventional display controller or bistable display controller (for example, interferometric modulator controller).In another embodiment, array driver 22 is conventional driver or bi-stable display driver (for example, interferometric modulator display).In one embodiment, driver controller 29 is integrated with array driver 22.This embodiment is general in the height integrated system of for example cellular phone, wrist-watch and other small-area display.In another embodiment, display array 30 is typical display array or bi-stable display array (display that for example, comprises interferometric modulator array).
In certain embodiments, as mentioned described in, control programmability reside in the driver controller, it can be arranged in some positions of electronic display system.In some cases, the control programmability resides in the array driver 22.Be understood by those skilled in the art that above-mentioned optimization may be implemented in the hardware of any number and/or the component software and can various configurations implement.
Details according to the structure of the interferometric modulator operated of principle of above statement can extensively change.For instance, Fig. 7 A-7E illustrates five different embodiment of removable reflection horizon 14 and supporting construction thereof.Fig. 7 A is the xsect of the embodiment of Fig. 1, and wherein strip of metal material 14 is deposited on the vertically extending support member 18.In Fig. 7 B, removable reflection horizon 14 only is attached to support member at the corner place on tethers (tether) 32.In Fig. 7 C, removable reflection horizon 14 is folded down from the deformable layer 34 that can comprise the flexible metal.Described deformable layer 34 is connected to directly or indirectly around the substrate 20 of the periphery of deformable layer 34.These connections are referred to herein as pillar.The embodiment that illustrates among Fig. 7 D has post plugs (support post plug) 42, and deformable layer 34 rests on the described post plugs 42.Shown in Fig. 7 A-7C, removable reflection horizon 14 keeps being suspended in the top, chamber, but deformable layer 34 does not form described pillar by the hole of filling between deformable layer 34 and the Optical stack 16.Exactly, pillar is formed by the smoothing material that is used to form post plugs 42.The embodiment that illustrates among Fig. 7 E is based on the embodiment that shows among Fig. 7 D, but also can be suitable for the embodiment that in Fig. 7 A-7C, illustrates and not shown extra embodiment any one play a role.In the embodiment shown in Fig. 7 E, used the additional layer of metal or other conductive material to form bus structure 44.This allows signal to carry out route along the back side of interferometric modulator, thereby eliminates the possible electrode that must be formed on the substrate 20 of many scripts.
In the embodiment of for example embodiment of those shown in Fig. 7, interferometric modulator serves as the direct viewing device, wherein watches image from the front side of transparent substrates 20, described side with above to be furnished with a side of modulator relative.In these embodiments, the part that reflection horizon 14 is covered interferometric modulator in the described side relative with substrate 20 in reflection horizon with optical mode is comprising deformable layer 34.This permission is configured and operates shaded areas and can negatively not influence picture quality.This kind covers the bus structure 44 that allow among realization Fig. 7 E, and it provides the ability with the optical property of modulator and the electromechanical property of modulator (for example, addressing reaches owing to moving that described addressing produces) separation.This separable modulator structure allows to select to be used for the structural design of the dynamo-electric aspect of modulator and optics aspect and material and it is played a role independently of one another.In addition, the embodiment shown in Fig. 7 C-7E has the additional benefit that the optical property that is derived from reflection horizon 14 and its engineering properties break away from, and described benefit is carried out by deformable layer 34.This structural design and material that allows to be used for reflection horizon 14 is optimized aspect optical property, and is used for the structural design of deformable layer 34 and material is being optimized aspect the engineering properties of expectation.
Fig. 8 is the xsect of exemplary interferometric modulator 100.Described interferometric modulator 100 comprises substrate 120, transparent conductor 140, partial reflector 116, dielectric 112, removable minute surface 114 and support member 118.In the embodiment of Fig. 8, support member 118 supports removable minute surface 114, and defines air gap 119 between dielectric layer 112 and removable minute surface.In advantageous embodiments, come air gap 119 is carried out size design according to the required optical characteristics of interferometric modulator.For instance, air gap 119 can be through size design to reflect required color from interferometric modulator.
Describe about Fig. 7 A, 7B and 7C as mentioned, on removable minute surface 14 and partial reflector 16, apply voltage difference usually so that activate interferometric modulator.Therefore, for example, in the embodiment of Fig. 7 A, 7B and 7C, removable minute surface 14 and partial reflector 16 are partially conductives at least, make it can be connected to the rowaand column lines of display device.Also in the one exemplary embodiment (for example, Fig. 7 A, 7B and 7C) as the electrode of interferometric modulator, described partial reflector can comprise chromium, titanium and/or molybdenum in partial reflector 16.
In exemplary interferometric modulator 100, show that transparent conductor 140 is between partial reflector 116 and substrate 120.In this embodiment, transparent conductor 140 is configured to the electrode as interferometric modulator, and therefore interferometric modulator 100 can be activated by apply suitable voltage difference (for example, 10 volts) between removable minute surface 114 and transparent conductor 140.In an exemplary embodiment, transparent conductor 140 comprise zinc paste, cadmium tin, the adulterated al of tin indium oxide (ITO), zinc paste, doped with fluorine zinc paste, doped with fluorine zinc paste and/or be doped with the zinc paste of gallium, boron or indium.Therefore in this embodiment, partial reflector 116 does not need for conduction, and partial reflector 116 can comprise any conduction or nonconducting suitable partial reflection material.
In some embodiment of interferometric modulator, the reflectivity of partial reflector 116 is in about 30-36% scope.For instance, in one embodiment, the reflectivity of partial reflector 116 is about 31%.In other embodiments, can use other reflectivity in conjunction with the system and method for describing herein.In other embodiments, can according to interferometric modulator 100 the outputting standard of wanting the reflectivity of partial reflector 116 is set at other level.In typical interferometric modulator, along with the thickness increase of partial reflector, the reflectivity of partial reflector also increases, and therefore reduces the validity of dark state, and the contrast of restriction interferometric modulator.Therefore, in order to reach the reflectivity of wanting of partial reflector, need to reduce the thickness of partial reflector in many examples.
In the embodiment of Fig. 8, because the fact that transparent conductor 140 serves as electrode, so partial reflector 116 can advantageously be thin.Therefore, partial reflector do not need for the conduction because transparent conductor has served as electrode.Therefore, (for example, transparent conductor 140 among) the embodiment, can reduce the thickness of partial reflector comprising transparent conductor so that reach the reflectivity of wanting.In one embodiment, partial reflector 116 has the thickness of about 75 dusts.In another embodiment, partial reflector 116 has the thickness in about 60-100 dust scope.In another embodiment, partial reflector 116 has the thickness in about 40-150 dust scope.
In one embodiment, partial reflector comprises silicon nitride, and it is the material of nonconducting partial reflection.In other embodiments, use the oxide of chromium, including (but not limited to) CrO2, CrO3, Cr2O3, Cr2O and CrOCN.In certain embodiments, the dielectric material with low conductivity is used as partial reflector.These low conductivity dielectric materials are commonly referred to " high-k dielectric ", and wherein " high-k dielectric " is meant the material that has more than or equal to about 3.9 specific inductive capacity.For example, high-k dielectric can be including (for example) SiO2, Si3N4, Al2O3, Y2O3, La2O3, Ta2O5, TiO2, HfO2 and ZrO2.
In other was implemented, partial reflector 116 comprised the dielectric stack with dielectric layer alternately, and described dielectric layer has different refractive indexes.Be understood by those skilled in the art that the output characteristics of interferometric modulator 100 color of the light of interferometric modulator 100 reflection (for example, from) is subjected to the influence of the reflectivity of partial reflector 116.Therefore, the reflectivity of tunable partial reflector 116 is so that reach desired output characteristics.In one embodiment, can comprise that the partial reflector 116 of the combination of the dielectric material in the stacked structure comes the refractive index of fine tuning partial reflector 116 by use.For instance, in one embodiment, partial reflector 116 can comprise SiO2 layer and CrOCN layer.In the one exemplary embodiment of the interfere type regulator with the partial reflector that comprises dielectric stack, the material layer of substrate 120 tops comprises the thick ITO layer of about 500 dusts, the SiO2 layer that about 1000 dusts are thick, the CrOCN layer that about 110 dusts are thick, the SiO2 layer that about 275 dusts are thick, air gap and Al reflecting body that about 2000 dusts are thick.Therefore, in this one exemplary embodiment, partial reflector comprises SiO2 layer and the thick CrOCN layer of about 110 dusts that about 1000 dusts are thick.Be understood by those skilled in the art that many conductions that other is fit to that existence can be used separately or be used in combination with other material or electrically non-conductive material are as the part of partial reflector 116.Can expect that obviously these materials are used in combination with system and method described herein.
In typical displays, along with the electric capacity increase of individual display elements (for example, interferometric modulator), the required power of voltage that changes on the display element also increases.For instance, along with the electric capacity increase of any display element that is activated in the interferometric modulator display, the required electric current of voltage level that the change display lists also increases.The display element that therefore, need have the electric capacity that reduces.Fig. 9 and 10 display element are the one exemplary embodiment with display element of the electric capacity that reduces.
Fig. 9 is the cross-sectional view with interferometric modulator 200 of the electric capacity that reduces.The interferometric modulator 200 of Fig. 9 comprises substrate 120, transparent conductor 140, dielectric 130, partial reflector 116, dielectric 112, removable minute surface 114, support member 118 and air gap 119.In an exemplary embodiment, the relative thickness of these layers through selecting so that the thickness of air gap 119 greater than the combination thickness of partial reflector 116, dielectric 112 and dielectric 130.In the embodiment of Fig. 9, by partial reflector 116 is reached less electric capacity from transparent conductor 140 decouplings, therefore increase the distance between the electrode (for example, removable minute surface 114 and transparent conductor 140) of interferometric modulator.More particularly, in the embodiment of Fig. 9, additional dielectric 130 is between transparent substrates 140 and partial reflector 116.The interpolation of dielectric 130 can not change the distance between partial reflector 116 and the removable minute surface 114, yet has increased the distance between transparent conductor 140 and the removable minute surface 114 really.In one embodiment, dielectric 130 has the thickness of about 1,000 dust.In other embodiments, dielectric 130 can have at about 800-3, the thickness in the 000 dust scope.
Describe about Fig. 8 as mentioned, for example, the interferometric modulator embodiment that comprises transparent conductor 140 can activate by apply voltage between transparent conductor 140 and removable minute surface 114.In the one exemplary embodiment of Fig. 9, when removable minute surface 114 collapses against dielectric layer 112, the gained between removable minute surface 114 and the transparent conductor 140 that has been energized is apart from the thickness that has increased dielectric layer 130.Because electric capacity changes mutually on the contrary with the distance of separate capacitor electrode,, correspondingly reduced the electric capacity of interferometric modulator 200 by increasing the distance between electrodes of interferometric modulator 200.Therefore, the interpolation of dielectric 130 can not influence the optical characteristics of interferometric modulator 200 significantly, but has reduced the electric capacity between the electrode (for example, removable minute surface 114 and transparent conductor 140) really.
Figure 10 is exemplary cross-sectional view with interferometric modulator 300 of the electric capacity that reduces.The interferometric modulator 300 of Figure 10 comprises substrate 312, transparent conductor 310, dielectric 308, partial reflector 306, dielectric 304, removable minute surface 302, support member 318 and air gap 303.In the embodiment of Figure 10, removable minute surface 302 separates with air gap 303 by dielectric layer 304 with partial reflector 306.In this embodiment, air gap 303 and dielectric 308 through size design so that (for example at the pine oil state, state shown in Figure 10) under, interferometric modulator 300 absorbs all light that is incident on the substrate 312 in fact, and the interferometric modulator 300 that makes the beholder see is a black.When interferometric modulator 300 was activated, for example, removable minute surface 302 collapses were so that its contact during dielectric 304, and interferometric modulator 300 reflects the incident light of all wavelengths in fact, made interferometric modulator 300 be rendered as white to the beholder.In certain embodiments, the reflection of light of all wavelengths all provides the white light that is called " wideband white " in fact.Because interferometric modulator 300 (is for example operated to compare opposite mode with 200 with interferometric modulator 100, interferometric modulator 300 produces colored or white under the pine oil state, and under state of activation, produce black), so interferometric modulator 300 is called " reverse interferometric modulator ".
In one embodiment, the optical gap of reverse interferometric modulator 300 (comprising air gap 303 and dielectric 306) much smaller than the optical gap that produces black and produce colored or white interferometric modulator under state of activation under the pine oil state (for example, Figure 100).For example, dielectric 304 can have the thickness less than about 150 dusts, and air gap 304 can have the thickness of about 1,400 dust, and interferometric modulator 100 can have in about 350 to 850 dust scopes dielectric thickness and about 2,000-3, the air gap in the 000 dust scope.Therefore, reverse interferometric modulator (for example, interferometric modulator 300) has littler optical gap than conventional interferometric modulator, and therefore, the electrode of reverse interferometric modulator is close together usually.In the one exemplary embodiment of Figure 10, when interferometric modulator 300 was in the collapse position, the distance between removable minute surface 302 and the partial reflector 306 was in about 150 to 200 dust scopes.This distance comprises the thickness (being about 150 dusts in the embodiment of Figure 10) of dielectric 304 and the less gap of about 0-50 dust, and described less gap may closely not contact each other in the collapse position with dielectric 304 because of removable minute surface 302 and exists.In other reverse interferometric modulator, optical gap between the electrode and distance may be than big or little among the figure that is above introduced.
Because distance between electrodes reduces, so the electric capacity of reverse interferometric modulator is much higher than conventional interferometric modulator.Therefore, reverse interferometric modulator may consume extra power when the voltage on its row of change and/or the row terminal.In order to reduce the electric capacity of reverse interferometric modulator 300, make dielectric layer 308 between the terminal of interferometric modulator.For instance, interferometric modulator 300 comprises the dielectric 308 of contiguous transparent conductor 310.With with above about same way as that Fig. 9 was discussed, for example, the interpolation of dielectric 308 does not influence the distance between partial reflector 306 and the removable minute surface 302, yet increased the distance between transparent conductor 310 and the removable minute surface 302 really, therefore reduced the electric capacity of interferometric modulator 300.Therefore, can be by between the electrode of interferometric modulator, adding the electric capacity that dielectric layer 308 significantly reduces reverse interferometric modulator 300.
Interferometric modulator 100,200 and 300 each all comprise removable minute surface (minute surface 114 among Fig. 8 and 9, and Figure 10 in minute surface 302).These exemplary removable minute surface deformables, so that when having suitable voltage on the terminal at interferometric modulator, described removable minute surface collapse is against dielectric 112 (Fig. 8 and 9), 304 (Figure 10).Yet, be understood by those skilled in the art that, above may be implemented among other embodiment of the interferometric modulator with the removable minute surface that disposes by different way about Fig. 8,9 and 10 improvement of describing.For instance, interferometric modulator 100,200 and 300 can maybe can have the removable minute surface (for example, Fig. 7 C) that is folded down from deformable layer through revising the removable minute surface (for example, Fig. 7 B) that only for example arrives support member by tether attachment at the corner place to have.Can expect obviously that by these other configurations of removable minute surface use is about Fig. 7,8 and 9 described improved system and methods.
Various embodiment of the present invention has above been described.Although described the present invention with reference to these specific embodiments, described description content is intended to illustrate the present invention but not is intended to and limits it.The those skilled in the art can carry out various modifications and application under the situation that does not break away from true essence of the present invention and scope.
Claims (51)
1. display device, it comprises:
One transparent in fact conductive layer, it is configured to first electrode;
One removable reflection horizon; With
A part reflection horizon, described partially reflecting layer between described transparent conductive layer and described removable reflection horizon, described partially reflecting layer and described transparent conductive layers apart.
2. display device according to claim 1, the optical function of wherein said partially reflecting layer separates with the electrical functions of described transparent conductive layer.
3. display device according to claim 2, wherein said removable reflection horizon is configured to second electrode.
4. display device according to claim 3, wherein separated partially reflecting layer and removable reflection horizon allow to increase described first and second distance between electrodes under the situation of the needed optical characteristics that keeps described display device.
5. display device according to claim 4 wherein increases described first and second distance between electrodes and causes described display device electric capacity to reduce.
6. display device according to claim 1, wherein said partially reflecting layer comprise a non-conductive layer.
7. display device according to claim 6, wherein the described partially reflecting layer with described transparent conductive layers apart allows to be independent of described transparent conductive layer and disposes described partially reflecting layer at needed optical characteristics.
8. display device according to claim 7, wherein said partially reflecting layer are configured and make its reflectivity increase with the increase of described partial reflection layer thickness.
9. display device according to claim 8, the reflectivity of wherein said partially reflecting layer is in the 30-36% scope.
10. display device according to claim 8, the thickness of wherein said partially reflecting layer is between 40 and 150 dusts.
11. display device according to claim 1 wherein one is applied to described transparent conductive layer and the electric signal between the described removable reflection horizon causes moving of described removable reflection horizon.
12. display device according to claim 1, it further comprises: the dielectric layer between described partially reflecting layer and described removable reflection horizon.
13. display device according to claim 1, it further comprises: the dielectric layer between described conductive layer and described partially reflecting layer.
14. display device according to claim 13, wherein said dielectric layer comprises the material that is selected from the group that comprises following each thing: SiO
2, Al
2O
3And silicon nitride.
15. display device according to claim 13, the thickness of wherein said dielectric layer is between 800 dusts and 3000 dusts.
16. display device according to claim 12, wherein said partially reflecting layer are conduction.
17. display device according to claim 1, wherein said partially reflecting layer comprises the material that is selected from the group that comprises following each thing: silicon nitride, CrO
2, CrO
3, Cr
2O
3, Cr
2O and CrOCN.
18. display device according to claim 1, wherein when described display element is in a state of activation, described display device presents white to the beholder, and when described display element was in a pine oil state, described display element presented non-white to described beholder.
19. display device according to claim 18, wherein when described display device was in described state of activation, the distance of one between described partially reflecting layer and the described removable reflection horizon was less than 200 dusts.
20. display device according to claim 19, wherein when described display device was in described pine oil state, the distance of one between described partially reflecting layer and the described removable reflection horizon was less than 1,550 dust.
21. display device according to claim 1, it further comprises:
At least one telecommunication in one processor, itself and described conductive layer and described removable reflection horizon is to move described removable reflection horizon, and described processor is configured to image data processing; With
One memory storage, itself and described processor telecommunication.
22. display device according to claim 21, it further comprises a drive circuit, and described drive circuit is configured at least one signal is sent in described conductive layer and the described removable reflection horizon at least one.
23. display device according to claim 22, it further comprises a controller, and described controller is configured at least a portion of described view data is sent to described drive circuit.
24. display device according to claim 21, it further comprises an image source module, and described image source module is configured to described image data transmission to described processor.
25. display device according to claim 24, wherein said image source module comprise in a receiver, a transceiver and the transmitter at least one.
26. display device according to claim 21, it further comprises an input media, and described input media is configured to receive the input data and described input data are sent to described processor.
27. display device according to claim 1, wherein said display device comprises an interferometric modulator.
28. a display system, it comprises the feature of each claim among the claim 1-27.
29. a method of making display element, described method comprises:
Form a transparent in fact conductive layer;
Form a part of reflection horizon, described partially reflecting layer and described conductive layers apart; With
Form a removable reflection horizon, described partially reflecting layer is between described conductive layer and described removable reflection horizon.
30. method according to claim 29 is wherein separated to comprise the optical function of the described partially reflecting layer electrical functions with described transparent conductive layer is separated.
31. method according to claim 30 wherein separates allowing to increase described first and second distance between electrodes under the situation that keeps the needed optical characteristics of described display device.
32. method according to claim 31 wherein increases described distance and causes described display device electric capacity to reduce.
33. method according to claim 29, wherein said partially reflecting layer comprises an insulation course.
34. method according to claim 33, wherein separation allows to be independent of described transparent conductive layer and disposes described partially reflecting layer at needed optical characteristics.
35. method according to claim 34 wherein forms described partially reflecting layer so that the reflectivity of described partially reflecting layer increases with the increase of described partial reflection layer thickness.
36. method according to claim 35, the reflectivity of wherein said partially reflecting layer is in the 30-36% scope.
37. method according to claim 35, the thickness of wherein said partially reflecting layer is between 40 and 150 dusts.
38. method according to claim 33, wherein said partially reflecting layer comprises the material that is selected from the group that comprises following each thing: silicon nitride, CrO
2, CrO
3, Cr
2O
3, Cr
2O and CrOCN.
39. method according to claim 29, wherein when described display element is in a state of activation, described display device presents white to the beholder, and when described display element was in a pine oil state, described display element presented non-white to described beholder.
40. according to the described method of claim 39, wherein when described display device was in described state of activation, the distance of one between described partially reflecting layer and the described removable reflection horizon was less than 200 dusts.
41. according to the described method of claim 40, wherein when described display device was in described pine oil state, the distance of one between described partially reflecting layer and the described removable reflection horizon was less than 1,550 dust.
42. method according to claim 29, it further comprises the dielectric layer of formation between described conductive layer and described partially reflecting layer.
43. according to the described method of claim 42, wherein said dielectric layer comprises the material that is selected from the group that comprises following each thing: SiO
2, Al
2O
3And silicon nitride.
44. according to the described method of claim 42, the thickness of wherein said dielectric layer is between 800 dusts and 3000 dusts.
45. according to the described display device of claim 42, wherein said partially reflecting layer is what conduct electricity.
46. display device according to the described method formation of each claim among the claim 29-45.
47. a display device, it comprises:
Modulating device, it is used to modulate an optical signalling, and described modulating device comprises a removable reflection horizon and a partially reflecting layer; And
Mobile initiating device, it is used to cause described removable reflection horizon with respect to the moving of described partially reflecting layer, and at least one in wherein said removable reflection horizon and the described partially reflecting layer separates from described mobile initiating device.
48. according to the described display device of claim 47, wherein said mobile initiating device comprises transparent in fact conductive layer that is configured to first electrode and the removable reflection horizon that is configured to second electrode, makes described partially reflecting layer separate with described mobile initiating device.
49. an interferometric modulator, it comprises a part of reflection horizon, described partially reflecting layer with cause the electrode separation that move in a removable reflection horizon.
50. an interferometric modulator, it is configured to make that the modulation size of its optical signal modulations is independent of electrode.
51. according to the described interferometric modulator of claim 50, wherein said optical signal modulations size is less than any interval that is associated with described electrode.
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| US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
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| JPH0791089B2 (en) * | 1988-12-13 | 1995-10-04 | セントラル硝子株式会社 | Heat ray reflective glass |
| US5500761A (en) * | 1994-01-27 | 1996-03-19 | At&T Corp. | Micromechanical modulator |
| JP4431196B2 (en) * | 1995-11-06 | 2010-03-10 | アイディーシー エルエルシー | Interferometric modulation |
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- 2005-09-08 CN CN2005800321196A patent/CN101027592B/en not_active Expired - Fee Related
- 2005-09-08 EP EP05796215A patent/EP1800167A1/en not_active Withdrawn
- 2005-09-08 BR BRPI0516050-2A patent/BRPI0516050A/en not_active IP Right Cessation
- 2005-09-23 TW TW094133186A patent/TW200638061A/en unknown
- 2005-09-23 TW TW100105680A patent/TW201213850A/en unknown
-
2007
- 2007-03-13 IL IL181905A patent/IL181905A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IL181905A0 (en) | 2007-07-04 |
| TW201213850A (en) | 2012-04-01 |
| TW200638061A (en) | 2006-11-01 |
| CN101027592B (en) | 2011-02-23 |
| EP1800167A1 (en) | 2007-06-27 |
| CN101027592A (en) | 2007-08-29 |
| BRPI0516050A (en) | 2008-08-19 |
| WO2006036495A1 (en) | 2006-04-06 |
| AU2005289996A1 (en) | 2006-04-06 |
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Application publication date: 20110413 |