CN102010661B - Method for preparing chemical and mechanical polishing liquid in ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process - Google Patents
Method for preparing chemical and mechanical polishing liquid in ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process Download PDFInfo
- Publication number
- CN102010661B CN102010661B CN 201010231552 CN201010231552A CN102010661B CN 102010661 B CN102010661 B CN 102010661B CN 201010231552 CN201010231552 CN 201010231552 CN 201010231552 A CN201010231552 A CN 201010231552A CN 102010661 B CN102010661 B CN 102010661B
- Authority
- CN
- China
- Prior art keywords
- polishing liquid
- ulsi
- mechanical polishing
- preparation
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention relates to a method for preparing chemical and mechanical polishing liquid in a ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process. In the method, ULSI copper can generate chemical reaction with alkali under the action of an oxidant, and the polishing liquid adopts alkaline media. The polishing liquid selects a nano SiO2 grinding material which has concentration of 4-50 percent by weight and a grain diameter of 15-40nm so as to be beneficial to removing materials and leveling a surface; and the polishing liquid has a pH value of 9-13, not only can effectively remove materials, but also can ensure the stability of silica sol. A preparing process adopts a negative pressure mixing step to evenly mix, not only effectively solves the production problems of SiO2 colloid condensation, dissolution, and the like for over-high local alkalescence of reaction liquid, but also avoids the pollution of organic matters, large grains, metal ions, and the like brought by the preparation methods of traditional method for preparing through compounding, mechanically stirring, and the like and can achieve super-clean requirement. The method can realize the no condensation and the no dissolution of the nano SiO2 grinding material under the conditions of high concentration and high pH value. When the polishing liquid prepared by the method is used for polishing, the polishing liquid can realize the high-precision machining of the ULSI copper surface.
Description
Technical field
The present invention relates to a kind of preparation method of polishing fluid, particularly relate to the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in a kind of ULSI copper surface.
Background technology
The resistance increase that reduces to make line capacitance and metal connecting line of the increase of integrated circuit density and device size, the RC that causes thus postpones also to increase.Metallic copper has low resistivity, superior electromigration resistance properties and low heat sensitivity, produces the reliability that less RC postpones and can improve circuit, and copper cash replaces the ideal material that traditional aluminum steel becomes interconnection line.
Copper CMP becomes in the ULSI preparation one of core technology of countries in the world extremely paying close attention to, and countries in the world are all stepping up that it is sealed research, to preferential occupying inter-national market.But many because of its subject that relates to, technical difficulty is large, Related Mechanism is also treated further research.At present, U.S. Cabot company, Rodel company arranged, Sumitomo Chemical and the Fujimi company of Japan what be in the first place in the world aspect the copper CMP polishing agent.But the abrasive material that they adopt is Al
2O
3, such abrasive hardness is high, decentralization is large, viscosity is large, difficulty is cleaned, easily cause surface tear and damage layer depth, contains KMnO metal ion or that belong to strong electrolyte and all adopt on oxidant is selected
4, K
2CrO
4, K
3Fe (CN)
6And NH
4NO
3Deng as oxidant, easily cause the contamination of serious metal ion after the polishing.
The compounded technology of tradition polishing fluid is easily introduced metal ion because of reactor, pipe material, simultaneously, stirs inequality and causes that local pH is too high or too low and also cause Ludox dissolving or cohesion.
Summary of the invention
The object of the invention is to overcome above-mentioned weak point, for solve the technical problems such as harmful pollution such as organic substance that known ULSI copper polishing fluid exists, metal ion, bulky grain in preparation process, provide the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in a kind of simple and easy to do, pollution-free ULSI copper surface.
Implementation of the present invention is as follows for achieving the above object:
The preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in a kind of ULSI copper surface is characterized in that implementation step is as follows:
(1) with following composition be weight %:
Nanometer SiO
2Abrasive material: 2-80, deionized water: 10-95,
Activating agent: 0.1-3, complexing agent: 0.1-3,
Amine alkali: 0.1-5;
(2) adopting the above ultra-pure water cleaning reaction of 18M Ω device 3 times, remove inside reactor impurity, is 15-40nm SiO with negative pressure with pH value 9-13, particle diameter again
2Colloidal sol sucting reaction device;
(3) under suction function, the violent vortex stirring of realization response liquid makes inside reactor without retention layer and dead angle, can avoid the large granular impurity such as extraneous dust to introduce in the polishing fluid; The alkaline pH conditioning agent adjusting pH value of utilizing negative pressure to suck after the dilution of 18M Ω ultra-pure water is 9-13; Under the eddy current state, add activating agent, complexing agent and the alkaline pH conditioning agent amine alkali of described amount, stir.
The abrasive material of described step (2) is the SiO of particle diameter 15-40nm, decentralization＜0.0001
2Colloidal sol, concentration 4-50wt%.
The activating agent that adds in the described step (3) is commercially available FA/O activating agent.
The complexing agent that adds in the described step (3) is commercially available FA/O complexing agent.
The amine alkali that adds in the described step (3) is selected arbitrarily more than one in triethanolamine, tetraethyl oxyammonia, ethylenediamine, AEEA or the polyethylene polyamine.
One of the free of contamination polypropylene of described step (2) reactor raw material selection, polyethylene, polymethyl methacrylate; Avoided the metal ions such as traditional metal reactor, metallic conduit, metal puddler to be incorporated in the polishing fluid.
Under negative pressure, form violent vortex stirring, can avoid laminar region Nano silica sol cohesion and cause and to use; And the alkaline conditioner after the dissolving of 18M Ω ultra-pure water is introduced under negative pressure, can avoid causing the cohesion of Nano silica sol or dissolving to use because local reaction liquid pH is too high.
The acting as of employing method among the present invention: the method that polishing fluid preparation feedback device adopts negative pressure to stir can be avoided the introducing of the noxious pollutants such as organic substance, metal ion, bulky grain; Can make Nano silica sol under negative pressure, be the eddy current state, prevent the cohesion of laminar region Ludox or dissolving and can't use; Can avoid the alkaline pH conditioning agent after 18M Ω ultra-pure water dissolves to cause cohesion owing to local pH is too high, can't use.
The invention has the beneficial effects as follows:
Select alkalescence polishing liquid, can be to equipment without corrosion, the Ludox good stability has solved acid polishing slurry and has polluted many difficult problems such as heavy, easy gel; Utilize the dual character of substrate material, when pH value 9 is above, easily generate the compound of solubility, thereby easily break away from the surface.
Select nanometer SiO
2Colloidal sol is as the polishing fluid abrasive material, and its particle diameter little (15-40nm), concentration high (4-50wt%), hardness little (little to the substrate damage degree), good dispersion degree can reach the high smooth low-damage polish of two-forty, pollute littlely, have solved existing Al
2O
3Many difficult problems such as abrasive hardness Da Yi scratches, easy precipitation.Special adopt that particle diameter is about 20nm, the SiO of decentralization＜0.0001
2The hydrosol replace Al
2O
3Use as abrasive material, not only can effectively solve Al
3+Pollution problem can also solve because polishing specular surface defective and the difficult cleaning problem that abrasive hardness, decentralization and viscosity cause.
The polishing fluid preparation method that negative pressure stirs can avoid the introducing of the noxious pollutants such as organic substance, metal ion, bulky grain; Can make Nano silica sol under negative pressure, be the eddy current state, prevent the cohesion of laminar region Ludox or dissolving and can't use; Can avoid the alkaline pH conditioning agent after 18M Ω ultra-pure water dissolves to cause condensing the phenomenon that to use owing to local pH is too high.
A kind of in the materials such as the free of contamination polypropylene of reactor raw material selection of the present invention, polyethylene, polymethyl methacrylate avoided adopting traditional metal reactor, metallic conduit, metal puddler etc. that metal ion is incorporated into drawback in the polishing fluid.
Adopt negative pressure to stir in the preparation process, not only stir, effectively solve because of the too high SiO that causes of the local alkalescence of reactant liquor
2The production such as coacervation of colloid, dissolving problem, and avoided the pollution of organic substance that the preparation methods such as traditional composite, mechanical agitation bring, bulky grain, metal ion etc., can reach ultra-clean requirement.The method can realize nanometer SiO simultaneously
2Do not condense, do not dissolve under abrasive material high concentration, the high pH value condition.Utilize the compound method of this polishing fluid, under corresponding polishing technological conditions, polish, can realize the high-accuracy processing on ULSI copper surface.And can satisfy industrial to the precision machined requirement of ULSI copper surface C MP.
Simultaneously, the present invention have also that cost is low, the advantage such as high efficiency, free from environmental pollution and etching apparatus.
Embodiment
Below in conjunction with preferred embodiment, to details are as follows according to embodiment provided by the invention:
Embodiment 1: preparation 4000g 4wt%ULSI copper polishing fluid
At first, adopt the above ultra-pure water cleaning reaction of 18M Ω device 3 times, remove inside reactor impurity; Under negative pressure stirs, be the nanometer SiO of 15-25nm, decentralization＜0.0001 with pH value 9-13, particle diameter
2Colloidal sol 260g(concentration 50wt%) the sucting reaction device sucks the 3710g deionized water while stirring; Under suction function, the violent vortex stirring of realization response liquid makes inside reactor without retention layer and dead angle, can avoid the large granular impurity such as extraneous dust to introduce in the polishing fluid; The alkaline pH conditioning agent 20g amine alkali adjusting pH value that the recycling negative pressure sucks after the dilution of 18M Ω ultra-pure water is 9-13; Under negative pressure stirs, add 5gFA/O activating agent and 5gFA/O complexing agent, finally regulate the pH value 9-13 of polishing fluid; Getting 4000g concentration after stirring is the ULSI copper polishing fluid of 4wt%, gets final product can.
Described amine alkali is selected arbitrarily more than one in triethanolamine, tetraethyl oxyammonia, ethylenediamine, AEEA or the polyethylene polyamine.
Described FA/O activating agent, FA/O complexing agent, amine alkali are Jingling Microelectric Material Co., Ltd., Tianjin commercially available prod.
One of the free of contamination polypropylene of described reactor raw material selection, polyethylene, polymethyl methacrylate.
Under negative pressure, form violent vortex stirring, can avoid laminar region Nano silica sol cohesion and cause and to use; Form violent vortex stirring state under the negative pressure, the alkaline conditioner after the dissolving of 18M Ω ultra-pure water is introduced under negative pressure, can avoid causing the cohesion of Nano silica sol or dissolving to use because local reaction liquid pH is too high.
Embodiment 2: preparation 4000g 50wt%ULSI copper polishing fluid
Under stirring, negative pressure gets particle diameter 15-25nm nanometer SiO
2Colloidal sol 3600g(50wt%) put into while stirring the 200g deionized water, get respectively 160g amine alkali, 20gFA/O activating agent and 20gFA/O complexing agent add aforesaid liquid while stirring under negative pressure, regulate the pH value 9-13 of polishing fluid; Get 4000g 50wt%ULSI copper material polishing fluid after stirring, after stirring, get final product can.
The other the same as in Example 1.
Embodiment 3: preparation 4000g 30wt% ULSI copper polishing fluid
Under stirring, negative pressure gets particle diameter 15-25nm nanometer SiO
2Colloidal sol 2200g(30wt%) put into while stirring the 1660g deionized water, get respectively 90g amine alkali, 25gFA/O activating agent and 25gFA/O complexing agent add aforesaid liquid while stirring under negative pressure, regulate the pH value 9-13 of polishing fluid; Get 4000g 50wt%ULSI copper material polishing fluid after stirring, after stirring, get final product can.
The other the same as in Example 1.
Above-mentioned detailed description of the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper surface being carried out with reference to embodiment; illustrative rather than determinate; can list several embodiment according to institute's limited range; therefore in the variation and the modification that do not break away under the general plotting of the present invention, should belong within protection scope of the present invention.
Claims (6)
1. the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper surface is characterized in that implementation step is as follows:
(1) with following composition be weight %:
Nanometer SiO
2Abrasive material: 2-80, deionized water: 10-95,
Activating agent: 0.1-3, complexing agent: 0.1-3,
Amine alkali: 0.1-5;
(2) adopting the above ultra-pure water cleaning reaction of 18M Ω device 3 times, remove inside reactor impurity, is 15-40nm SiO with negative pressure with pH value 9-13, particle diameter again
2Colloidal sol sucting reaction device;
(3) under suction function, the violent vortex stirring of realization response liquid makes inside reactor without retention layer and dead angle; The alkaline pH conditioning agent adjusting pH value of utilizing negative pressure to suck after the dilution of 18M Ω ultra-pure water is 9-13; Under the eddy current state, add activating agent, complexing agent and the alkaline pH conditioning agent amine alkali of described amount, stir.
2. the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper according to claim 1 surface, it is characterized in that: the abrasive material of described step (2) is the SiO of particle diameter 15-40nm, decentralization＜0.0001
2Colloidal sol, concentration 4-50wt%.
3. the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper according to claim 1 surface, it is characterized in that: the activating agent that adds in the described step (3) is commercially available FA/O activating agent.
4. the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper according to claim 1 surface, it is characterized in that: the complexing agent that adds in the described step (3) is commercially available FA/O complexing agent.
5. the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper surface according to claim 1 is characterized in that: more than one in amine alkali selection triethanolamine, tetraethyl oxyammonia, ethylenediamine, AEEA or the polyethylene polyamine that adds in the described step (3).
6. the preparation method of chemical mechanical polishing liquid in the high-accuracy course of processing in ULSI copper surface according to claim 1 is characterized in that: one of the free of contamination polypropylene of described step (2) reactor raw material selection, polyethylene, polymethyl methacrylate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231552 CN102010661B (en) | 2010-07-21 | 2010-07-21 | Method for preparing chemical and mechanical polishing liquid in ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231552 CN102010661B (en) | 2010-07-21 | 2010-07-21 | Method for preparing chemical and mechanical polishing liquid in ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102010661A CN102010661A (en) | 2011-04-13 |
| CN102010661B true CN102010661B (en) | 2013-03-06 |
Family
ID=43840997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010231552 Expired - Fee Related CN102010661B (en) | 2010-07-21 | 2010-07-21 | Method for preparing chemical and mechanical polishing liquid in ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102010661B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105419651A (en) * | 2015-12-25 | 2016-03-23 | 天津晶岭微电子材料有限公司 | Application of alkalescence polishing liquid in CMP for inhibiting galvanic corrosion of GLSI copper and cobalt barrier layer |
| CN105598826A (en) * | 2015-12-25 | 2016-05-25 | 天津晶岭微电子材料有限公司 | Application of alkaline copper rough polishing liquid to improving of rough grinding coincidence of multiple GLSI copper wiring copper films |
| CN106118491B (en) * | 2016-07-11 | 2018-06-12 | 河北工业大学 | It is a kind of for alkalescence polishing liquid of thin copper film barrier layer cobalt and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101096571A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Polishing liquid for glass material and preparation method thereof |
| CN101469251A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Sapphire substrate polishing solution and method for producing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020098784A1 (en) * | 2001-01-19 | 2002-07-25 | Saket Chadda | Abrasive free polishing in copper damascene applications |
| KR100535074B1 (en) * | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | Slurry for Chemical Mechanical Polishing of Ruthenium and the Process for Polishing Using It |
-
2010
- 2010-07-21 CN CN 201010231552 patent/CN102010661B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101096571A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Polishing liquid for glass material and preparation method thereof |
| CN101469251A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Sapphire substrate polishing solution and method for producing the same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2003-109922A 2003.04.11 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102010661A (en) | 2011-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20190185715A1 (en) | Polishing liquid for cmp and preparation method and use thereof | |
| US20050005525A1 (en) | Non-polymeric organic particles for chemical mechanical planarization | |
| CN101671527A (en) | Copper chemical mechanical polishing solution with high removing rate and low damage, and preparation method thereof | |
| CN113621346B (en) | Suspension auxiliary agent applied to large-size silicon wafer grinding, preparation method and application thereof | |
| CN102796460B (en) | Silicon dioxide-based CMP (Chemical Mechanical Polishing) solution and preparation method thereof | |
| JP2003502255A (en) | Improved ceria powder | |
| WO2003055958A1 (en) | Abrasive composition containing organic particles for chemical mechanical planarization | |
| CN102010661B (en) | Method for preparing chemical and mechanical polishing liquid in ULSI (Ultra Large Scale Integrated) copper surface high-precision machining process | |
| CN111004579A (en) | Alkaline polishing solution for reducing CMP (chemical mechanical polishing) defects of multilayer copper interconnection barrier layer and preparation method thereof | |
| CN101096577A (en) | Antifreeze polishing liquid and preparation method thereof | |
| CN114591684B (en) | Environment-friendly chemical mechanical polishing solution based on high-purity spherical silica sol, and preparation method and polishing method thereof | |
| JP2004155913A (en) | Abrasive grain for polishing, manufacturing method therefor, and abrasive | |
| Zhang et al. | Effect of the carboxyl group number of the complexing agent on polishing performance of alumina slurry in sapphire CMP | |
| CN114479676A (en) | Low-abrasive-content and weakly acidic polishing solution for ultraprecise processing of optical glass and preparation method thereof | |
| CN113667546A (en) | Cleaning agent composition used after silicon wafer processing | |
| CN104017501B (en) | A kind of ultrasonic atomizatio type polishing fluid being applicable to TFT-LCD glass substrate | |
| CN100462203C (en) | Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing | |
| CN115584507B (en) | Antirust metal cleaning agent and preparation method and use method thereof | |
| CN102010663A (en) | Method for preparing chemical mechanical polishing solution of silicon dioxide dielectric | |
| KR101184730B1 (en) | Method for Preparing Cerium Oxide Nano Powder Having Uniform Particle Distribution | |
| CN102010662B (en) | Preparation method of ceramic-glass polishing solution | |
| CN102010660B (en) | Preparation method of chemical mechanical tantalum polishing solution | |
| JP4955253B2 (en) | Polishing composition for polishing device wafer edge, method for producing the same, and polishing method | |
| Wang et al. | Role of slurry chemistry for defects reduction during barrier CMP | |
| Seo | Oxide-chemical mechanical polishing characteristics using silica slurry retreated by mixing of original and used slurry |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20180721 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |