CN102005405A - Method for manufacturing tungsten plunger - Google Patents
Method for manufacturing tungsten plunger Download PDFInfo
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- CN102005405A CN102005405A CN2009101947811A CN200910194781A CN102005405A CN 102005405 A CN102005405 A CN 102005405A CN 2009101947811 A CN2009101947811 A CN 2009101947811A CN 200910194781 A CN200910194781 A CN 200910194781A CN 102005405 A CN102005405 A CN 102005405A
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- tungsten
- tungsten plug
- adhesion layer
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Abstract
The invention discloses a method for manufacturing a tungsten plunger. The method comprises the following steps of: providing a substrate, wherein a dielectric layer is formed on the surface of the substrate, an opening is formed on the dielectric layer, and the substrate is exposed by the opening; forming an adhesive layer on the substrate; nitriding the adhesive layer so that a part of the adhesive layer forms a barrier layer; filling the opening with metal tungsten; and removing the excessive metal tungsten and a part of the barrier layer to form the tungsten plunger. By the method, internal voids formed during the manufacturing of the tungsten plunger are eliminated or reduced, interconnection resistance of the tungsten plunger is reduced, the tungsten plunger is prevented from being immersed and corroded by polishing solution during chemical mechanical polishing, and the reliability of a product is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of manufacture method of tungsten plug.
Background technology
Along with development of semiconductor, the integrated level of very large scale integration chip is up to the scale of several hundred million and even tens devices, and two-layer above multiple layer metal interconnection technique is extensively practical.At present, the electrical connection between two different metal layers is to form through hole and filled conductive material, form embolism (plug) structure and realize by the dielectric layer between two metal levels.The formation quality of embolism is very big to the performance impact of device, and is second-rate if embolism forms, and can make interconnection resistance increase, and influences the performance of device.Tungsten becomes the preferred material of embolism owing to its good step coverage (step coverage) and fillibility.
Along with constantly reducing of process, copper wiring technique is used widely, but the diffusion of copper can cause device " poisoning effect ", and therefore, the metal of filling in the contact hole of source, leakage and gate region is still selected tungsten for use.
In application number is 200610030809.4 Chinese patent, disclose a kind of fill method of contact hole, in contact hole, formed adhesion layer and barrier layer before this; Again reduction processing is carried out on the barrier layer of described contact hole bottom; In described contact hole, form tungsten plug at last.Fig. 1 to Fig. 3 has provided the cross-sectional view of tungsten plug manufacture process in this technical scheme.
As shown in Figure 1, described substrate 100 surfaces have dielectric layer 101, have contact hole 110 on the described dielectric layer 101, and described contact hole 110 exposes described substrate 100.
As shown in Figure 2, in described contact hole 110, fill Titanium (Ti), form adhesion layer 102.Titanium and commonly used dielectric material and all fine as the adhesiveness of the material (TiN) on barrier layer can effectively improve the step coverage on barrier layer.In addition, the titanium in the adhesion layer can be in deposit with contact hole 110 base substrate 100 in silicon materials react, form the TiSi of low-resistance
x, improve the electrical characteristics of described contact hole 110.
As shown in Figure 3, on described adhesion layer 102, form titanium nitride (TiN), form barrier layer 103.Deposition process can be metal organic chemical vapor deposition (MOCVD).The effect of barrier layer TiN can increase the adhesiveness between tungsten and the contact hole on the one hand, improves the filling quality of tungsten plug, used reactant WF in the time of also can stoping depositing metal tungsten on the other hand
6React with the silicon materials in the described substrate 100 in described contact hole 110 bottoms, form the WSi of high resistant
xAnd cause contact resistance to increase.
In order to reduce the influence of the 103 pairs of embolism resistance in described barrier layer, prior art has been carried out reduction processing to described barrier layer 103, recharges tungsten after the attenuate and forms tungsten plug.
In actual process, in the process of deposit Ti and TiN, corner all can form " projection " (overhang) 110a on the opening both sides of contact hole 110, as shown in Figure 4.Along with improving constantly of technological level, particularly enter after 65nm and the higher technological level, described protruding 110a can influence the filling effect of tungsten, as shown in Figure 5, can form cavity (seam in the feasible tungsten 104 of filling, void) 104a, described empty 104a can increase the interconnection resistance of tungsten plug.In addition, carrying out chemico-mechanical polishing (CMP, when ChemicalMechanical Polish) removing unnecessary tungsten and barrier layer, polishing fluid can immerse tungsten plug inside by empty 104a, as shown in Figure 6, it is acid or alkaline that polishing fluid generally all is, and contains the number of chemical composition, meeting corroding metal tungsten, the reliability of reduction device.
Summary of the invention
The invention provides a kind of manufacture method of tungsten plug, eliminate or reduced the interior void that forms in the tungsten plug manufacture process.
The invention provides a kind of manufacture method of tungsten plug, comprise the steps:
Substrate is provided, and described substrate surface has dielectric layer, and opening is arranged in the dielectric layer, and described opening exposes substrate;
On described substrate, form adhesion layer;
The described adhesion layer of nitrogenize makes the part adhesion layer form the barrier layer;
In described opening, fill tungsten;
Remove unnecessary tungsten and part barrier layer, form tungsten plug.
Described nitridation process uses nitrogenous gas as reacting gas, as nitrogen.
The flow that feeds nitrogen in the described nitridation process is that 20sccm (ml/min) is to 80sccm.
The forming process of described nitridation process and described adhesion layer is carried out in same reaction chamber (chamber).
The temperature of described nitridation process is 100 degrees centigrade to 300 degrees centigrade.
The time of described nitridation process is 5 seconds to 60 seconds.
Pressure in the described nitridation process reaction chamber is that 10mtorr (millitorr) is to 20mtorr.
The material of described adhesion layer is titanium (Ti).
The thickness of described adhesion layer is 80 dust to 200 dusts.
The material on described barrier layer is titanium nitride (TiN), and described barrier layer thickness is 5 dust to 10 dusts.
Compared with prior art, above-mentioned disclosed technical scheme has following advantage:
In the manufacture method of above-mentioned disclosed tungsten plug, form adhesion layer earlier, the described adhesion layer of nitrogenize then, make the part adhesion layer form the barrier layer, prevented because the deposit number of plies too much causes contact hole opening both sides corner to form " projection " phenomenon, thereby eliminate or reduced the interior void that forms in the tungsten plug manufacture process, prevented that polishing fluid immerses and the corrosion tungsten plug in the CMP (Chemical Mechanical Polishing) process, improved reliability of products.
Description of drawings
Fig. 1 to Fig. 3 is the cross-sectional view of prior art tungsten plug formation method;
Fig. 4 is the schematic diagram of " projection " phenomenon after prior art adhesion layer and the barrier layer deposition;
Fig. 5 is the schematic diagram of " cavity " phenomenon in the tungsten plug behind the prior art deposition tungsten metal;
Fig. 6 is that the prior art tungsten plug is through the schematic diagram after the chemico-mechanical polishing;
Fig. 7 is the schematic flow sheet of tungsten plug formation method of the present invention;
Fig. 8 to Figure 12 is the cross-sectional view of tungsten plug formation method of the present invention.
Embodiment
The invention provides a kind of manufacture method of tungsten plug, improved the forming process on barrier layer, form adhesion layer earlier, then with described adhesion layer nitrogenize, make the part adhesion layer form the barrier layer, prevented, thereby eliminate or reduced the interior void that forms in the tungsten plug manufacture process because the deposit number of plies too much causes contact hole opening both sides corner to form " projection " phenomenon, prevented that polishing fluid immerses and the corrosion tungsten plug in the CMP (Chemical Mechanical Polishing) process, improved reliability of products.
For method of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Fig. 7 has provided the flow chart of one embodiment of the present of invention.
As shown in Figure 7, execution in step S1 provides substrate, and described substrate surface has dielectric layer, and opening is arranged in the dielectric layer, and described opening exposes substrate; Execution in step S2 forms adhesion layer on described substrate; Execution in step S3, the described adhesion layer of nitrogenize makes the part adhesion layer form the barrier layer; Execution in step S4 fills tungsten in described opening; Execution in step S5 removes unnecessary tungsten and part barrier layer, forms tungsten plug.
Fig. 8 to Figure 12 is the cross-sectional view of the formation tungsten plug method of one embodiment of the present of invention.
As shown in Figure 8, provide substrate 200, described substrate 200 surfaces have dielectric layer 201, in the described dielectric layer 201 opening 210 are arranged, and described opening 210 exposes substrate 200.
The material of described substrate 200 can be a kind of in monocrystalline silicon, polysilicon, the amorphous silicon, the material of described substrate 200 also can be a silicon Germanium compound, described substrate 200 can also be an epitaxial layer structure on silicon-on-insulator (SOI, Silicon On Insulator) structure or the silicon.In described substrate 200, be formed with the semiconductor device (not shown), for example have the MOS transistor of grid, source electrode and drain electrode.
Described dielectric layer 201 can be silica, Pyrex, phosphorosilicate glass, boron-phosphorosilicate glass etc., and the material of dielectric layer described in the present embodiment 201 is preferably silica (SiO
2).
The formation method of described opening 210 specifically comprises: at dielectric layer 201 surperficial spin coating photoresists, and patterning; Use dry etching to form described opening 210 afterwards; After the dry etching, remove residual photoresist, the method for described removal photoresist can be the oxygen gas plasma ashing method.
As shown in Figure 9, on described substrate 200, comprise on the surface of the bottom of opening 210 and sidewall and dielectric layer 201 forming adhesion layer 202.
Described adhesion layer 202 material in the present embodiment is titanium (Ti), and the formation method is physical vapor deposition (PVD).Detailed process comprises that with after the described substrate cleaning put into the sputter reaction chamber, with argon (Ar) ion sputtering, deposit forms the Ti layer.The thickness of described adhesion layer 202 is 80 dust to 200 dusts, compared with prior art, the thickness of described adhesion layer 202 is thicker, on the one hand as adhesion layer, in subsequent process 202 nitrogenize of part adhesion layer are formed the barrier layer on the other hand, preferred adhesion layer thickness is 80 dust to 120 dusts in the present embodiment.
In the forming process of described adhesion layer 202,210 places inevitably still have " projection " phenomenon at described opening, but forming adhesion layer with prior art deposit in two steps compares with the barrier layer, titanium layer of deposit, " projection " phenomenon that causes has alleviated a lot, after the deposition process of tungsten in can not form the cavity basically.
Described adhesion layer 202 has the effect of two aspects, on the one hand because adhesiveness is very poor between the material of material titanium nitride in the barrier layer and dielectric layer 201, directly the deposit titanium nitride can cause the low problem of step coverage on described dielectric layer 201, and described adhesion layer 202 has improved the step coverage of titanium nitride in described opening 210; Utilize the silicon materials in Titanium and described opening 210 base substrate 200 to react on the other hand, form the TiSi of low-resistance
x, reduced contact resistance.
In order to form the silicide of low-resistance better, embodiment as an optimization of the present invention, can be after forming described adhesion layer 202, described substrate 200 is carried out quick thermal annealing process, make bottom at described opening 210, Titanium and the position that described substrate 200 contacts can form enough thick TiSi
xContact layer reduces contact resistance.
As shown in figure 10, the described adhesion layer 202 of nitrogenize makes part adhesion layer 202 form barrier layer 203.
Preferred reacting gas is a nitrogen in the present embodiment nitridation process.Nitrogen current is crossed the surface of described adhesion layer 202, with titanium in the described adhesion layer 202 formation titanium nitride that reacts, has constituted barrier layer 203.
The forming process of described nitridation process and described adhesion layer 202 original position in same reaction chamber (chamber) is carried out, and is included in specifically that deposit forms described adhesion layer 202 in the physical vapor deposition reaction chamber, feeds nitrogen (N afterwards in this reaction chamber again
2) surfaces nitrided with described adhesion layer 202.Compared with prior art, saved the MOCVD technical process of using when described barrier layer 203 forms, reduced expense, reduced manufacturing cost in technological process.
The temperature of described nitridation process is 100 degrees centigrade to 300 degrees centigrade, reaction time is 5 seconds to 60 seconds, the flow that feeds nitrogen is that 20sccm (ml/min) is to 80sccm, pressure in the reaction chamber be 10mtorr (millitorr) to 20mtorr, the thickness on the barrier layer 203 that nitrogenize generates is 5 dust to 10 dusts.In the present embodiment in the nitridation process preferred reaction temperature be 180 degrees centigrade to 230 degrees centigrade, the reaction time is 30 seconds, the flow that feeds nitrogen is 40sccm, reaction pressure is 10mtorr, the thickness on the barrier layer 203 of generation is 8 dusts.
The formation on described barrier layer 203 is to realize by the surface of the described adhesion layer 202 of nitrogenize, except having saved a step deposition process, relative prior art, also alleviated " projection " phenomenon at described opening 210 places, reserve more deposit space for tungsten deposition process afterwards, avoided or reduced the formation of tungsten plug interior void.
There are two aspect effects on described barrier layer 203, has good adhesiveness between the material titanium nitride on described barrier layer 203 and the tungsten on the one hand, has guaranteed the filling effect of tungsten subsequently; Described on the other hand barrier layer 203 also can prevent reactant WF in the process of deposition tungsten
6React with silicon materials in described opening 210 base substrate 200 and to form WSi
x, WSi
xResistivity is very high, can make contact resistance increase, and causes device performance to reduce.
As shown in figure 11, on described substrate 200, form tungsten (W) layer 204.
The formation method of described metal tungsten layer 204 is chemical vapor deposition (CVD), and used key reaction thing is WF in the present embodiment
6And SiH
4Described substrate-transfer to vacuum reaction chamber, is incorporated in the reaction chamber reaction atmosphere as chemical vapor deposition with inert gas argon (Ar) gas; Use hydrogen (H
2) as carrier gas with silane (SiH
4) gas introduces in the reaction chamber; Next feed tungsten fluoride (WF
6) gas carries out course of reaction.The key reaction process comprises: SiH
4Generate Si and H after the thermal decomposition
2, WF
6By H
2Reduction forms tungsten, and tungsten at first forms the tungsten inculating crystal layer at opening sidewalls and bottom deposit, and a large amount of afterwards deposits form the tungsten metal level.Owing to formed described barrier layer 203 before, therefore WF in course of reaction
6Can not react, avoided consumption and erosion, prevented that reaction from forming the WSi of high resistivity yet silicon materials in the described substrate 200 with the silicon materials in the described substrate 200
xAnd cause the interconnection resistance of tungsten plug to increase.
As shown in figure 12, remove unnecessary metal tungsten layer of described substrate surface 204 and part barrier layer 203, form tungsten plug 204a.The method of removing tungsten can be chemico-mechanical polishing or return and carve (etchback) that preferable methods is chemico-mechanical polishing in the present embodiment.Chemico-mechanical polishing can be ground on the one hand and be removed unnecessary tungsten, can be convenient to carry out ensuing manufacturing process so that the surface after the polishing has good evenness on the other hand.
After the chemico-mechanical polishing, the surface of described substrate 200 is cleaned, finished the manufacture process of whole tungsten plug.
To sum up, the invention provides a kind of manufacture method of tungsten plug.Compared with prior art, the present invention has improved the formation method on barrier layer, form adhesion layer earlier, the described adhesion layer of nitrogenize then, make the part adhesion layer form the barrier layer, eliminate or reduced the interior void that forms in the tungsten plug manufacture process, reduced the interconnection resistance of tungsten plug, prevented that polishing fluid immerses and the corrosion tungsten plug in the CMP (Chemical Mechanical Polishing) process, improved reliability of products.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. the manufacture method of a tungsten plug is characterized in that, comprising:
Substrate is provided, and described substrate surface has dielectric layer, and opening is arranged in the dielectric layer, and described opening exposes substrate;
Form adhesion layer on described substrate, described adhesion layer covers described open bottom and sidewall;
The described adhesion layer of nitrogenize makes the part adhesion layer form the barrier layer;
Form tungsten on described barrier layer, described tungsten fills up opening;
Remove unnecessary tungsten and part barrier layer, form tungsten plug.
2. according to the manufacture method of the described tungsten plug of claim 1, it is characterized in that described nitridation process uses the gas of nitrogenous element as reacting gas.
3. according to the manufacture method of the described tungsten plug of claim 2, it is characterized in that described nitrogenous gas is nitrogen.
4. according to the manufacture method of each described tungsten plug in the claim 1 to 3, it is characterized in that the forming process of described nitridation process and adhesion layer is carried out in same reaction chamber.
5. according to the manufacture method of the described tungsten plug of claim 1, it is characterized in that the pressure in the reaction chamber of described nitridation process is 10mtorr to 20mtorr; The temperature of described nitridation process is 100 degrees centigrade to 300 degrees centigrade; The flow of described feeding nitrogen is 20sccm to 80sccm; The time of described nitridation process is 5 seconds to 60 seconds.
6. according to the manufacture method of the described tungsten plug of claim 1, it is characterized in that the material of described adhesion layer is a titanium.
7. according to the manufacture method of the described tungsten plug of claim 1, it is characterized in that the thickness of described adhesion layer is 80 dust to 200 dusts.
8. according to the manufacture method of the described tungsten plug of claim 1, it is characterized in that the material on described barrier layer is a titanium nitride.
9. the manufacture method of described tungsten plug according to Claim 8 is characterized in that the thickness of described titanium nitride is 5 dust to 10 dusts.
10. according to the manufacture method of the described tungsten plug of claim 1, it is characterized in that, after forming described adhesion layer, also comprise described substrate is carried out the quick thermal annealing process step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101947811A CN102005405A (en) | 2009-08-28 | 2009-08-28 | Method for manufacturing tungsten plunger |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101947811A CN102005405A (en) | 2009-08-28 | 2009-08-28 | Method for manufacturing tungsten plunger |
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| CN102005405A true CN102005405A (en) | 2011-04-06 |
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| CN2009101947811A Pending CN102005405A (en) | 2009-08-28 | 2009-08-28 | Method for manufacturing tungsten plunger |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347491A (en) * | 2013-08-09 | 2015-02-11 | 上海华虹宏力半导体制造有限公司 | Tungsten deposition method |
| CN104752320A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and forming method thereof |
| CN105097474A (en) * | 2014-05-09 | 2015-11-25 | 中国科学院微电子研究所 | Method for manufacturing semiconductor device |
| CN106033714A (en) * | 2015-03-10 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Forming method of semiconductor structure |
| CN109256358A (en) * | 2017-07-14 | 2019-01-22 | 长鑫存储技术有限公司 | A kind of preparation method of conductive plug and semiconductor devices with conductive plug |
| CN110265354A (en) * | 2018-03-12 | 2019-09-20 | 长鑫存储技术有限公司 | Tungsten plug and preparation method thereof |
| CN111162039A (en) * | 2018-11-08 | 2020-05-15 | 长鑫存储技术有限公司 | Metal conductive structure and preparation method of semiconductor device |
| CN113192881A (en) * | 2021-04-29 | 2021-07-30 | 广州粤芯半导体技术有限公司 | Method for forming interconnection structure |
-
2009
- 2009-08-28 CN CN2009101947811A patent/CN102005405A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347491A (en) * | 2013-08-09 | 2015-02-11 | 上海华虹宏力半导体制造有限公司 | Tungsten deposition method |
| CN104347491B (en) * | 2013-08-09 | 2017-06-06 | 上海华虹宏力半导体制造有限公司 | The method of tungsten deposition |
| CN104752320A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and forming method thereof |
| CN104752320B (en) * | 2013-12-27 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor devices and forming method thereof |
| CN105097474A (en) * | 2014-05-09 | 2015-11-25 | 中国科学院微电子研究所 | Method for manufacturing semiconductor device |
| CN105097474B (en) * | 2014-05-09 | 2018-03-06 | 中国科学院微电子研究所 | A kind of manufacture method of semiconductor devices |
| CN106033714A (en) * | 2015-03-10 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Forming method of semiconductor structure |
| CN109256358A (en) * | 2017-07-14 | 2019-01-22 | 长鑫存储技术有限公司 | A kind of preparation method of conductive plug and semiconductor devices with conductive plug |
| CN110265354A (en) * | 2018-03-12 | 2019-09-20 | 长鑫存储技术有限公司 | Tungsten plug and preparation method thereof |
| CN110265354B (en) * | 2018-03-12 | 2022-07-05 | 长鑫存储技术有限公司 | Preparation method of tungsten plug |
| CN111162039A (en) * | 2018-11-08 | 2020-05-15 | 长鑫存储技术有限公司 | Metal conductive structure and preparation method of semiconductor device |
| CN113192881A (en) * | 2021-04-29 | 2021-07-30 | 广州粤芯半导体技术有限公司 | Method for forming interconnection structure |
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