CN101997087A - Base plate applied to flexible electronic device and manufacture method thereof - Google Patents
Base plate applied to flexible electronic device and manufacture method thereof Download PDFInfo
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- CN101997087A CN101997087A CN2009101633960A CN200910163396A CN101997087A CN 101997087 A CN101997087 A CN 101997087A CN 2009101633960 A CN2009101633960 A CN 2009101633960A CN 200910163396 A CN200910163396 A CN 200910163396A CN 101997087 A CN101997087 A CN 101997087A
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Abstract
The invention relates to a base plate applied to a flexible electronic device, which comprises a support carrier, a first material layer, a second material layer and a flexible base plate, wherein the first material layer covers the support carrier by a first area; the second material layer covers the first material layer and the support carrier by a second area; the second area is larger than or equal to the first area; the flexible base plate covers the second material layer, the first material layer and the support carrier by a third area; the third area is larger than the second area; and the density of the flexible base plate on the support carrier is larger than that of the first material layer on the support carrier. The invention also relates to a manufacture method of the base plate.
Description
Technical field
The present invention relates to a kind of substrate, particularly relates to a kind of substrate and manufacture method thereof of regulating and control stress.
Background technology
Flexible display has become the development trend of novel display of new generation, and develop active flexible display main flow trend especially, each big research and development company of the world strides into non-glass system and the lighter soft plastic baseplate material development of weight by existing thick and heavy and breakable glass substrate, and strides forward towards active full-color TFT display floater.At present, a-Si TFT, LPTS TFT and three kinds of selections of OTFT are arranged, comprise EPD, ECD, LCD and EL in the part of display medium at the technology of the active flexible display of exploitation.
Selection in manufacture can divide batch methode (batch type) and volume to volume (roll to roll) dual mode, carry out the manufacturing of TFT device if select batch type mode, can utilize existing TFT equipment to make, has suitable advantage, but must the so-called substrate of development shift or, flexible display is transferred on other plastic base or taken off from glass from membrane technology.Then must utilize brand-new equipment to carry out in roll to roll mode, and must overcome rotation and contact the relevant issues that caused.
Make the TFT structure in batch type mode and mainly contain three kinds of modes, one changes and to be affixed on the silicon for SEC utilizes PES to work as substrate, utilize low temperature a-Si TFT technological development 7 " VGA (640 * 480) plasticity (plastic) LCD; and that this method needs is one high temperature resistant, low thermal coefficient of expansion, low light hysteresis and the good high transparency carrier material of chemical resistance, and cooperate suitable glue material and good release technology.Two for SeikoEpson carries out the exploitation of TFT backboard with LPTS transfer (transfer) technology, carries out LPTS TFT backboard and make on glass substrate, and after finishing, Seiko Epson utilizes laser tempering (laser annealing) again.So-called transfer techniques major advantage is the restriction that TFT device process temperatures is not subjected to plastic base, therefore, characteristic is preferably arranged, so general tool high light transmittance plastic base just can be used to use, but its metastasis and commentaries on classics subsides technology seem more important.In addition, the third is on glass for Philips utilizes polyimides (PI) to coat, and carries out the exploitation of a-Si TFT-EPD display, and utilizes transfer techniques that the PI substrate is taken off on glass.Though this technology is utilized the traditional PI plastic base and is had resistant to elevated temperatures characteristic, directly coat on glassly, not only process temperatures can surpass 300 ℃, can save again and change the step of pasting, but still must utilize the laser ablation glass substrate.
Can obtain the good soft TFT device of characteristic though utilize coating method that plastic base is taken shape in the TFT of carrying out processing procedure on glass, but because the inside and outside asymmetric formation unbalanced stress of structure on two sides of plastic base makes out-of-flatness of flexible base plate warpage even serious curling to use.
Summary of the invention
The object of the present invention is to provide a kind of can regulate and control stress, be applied to the soft electronic device substrate, and manufacture method.
One embodiment of the invention provide a kind of substrate that is applied to soft photoelectric device, comprising: a prop carrier; One first material layer covers this prop carrier with one first area; One second material layer covers this first material layer and this prop carrier with a second area, and wherein this second area is more than or equal to this first area; An and flexible base plate, cover this second material layer, first material layer and this prop carrier with one the 3rd area, wherein the 3rd area greater than this second area and this flexible base plate to the density of this prop carrier greater than the density of this first material layer to this prop carrier.
One embodiment of the invention provide a kind of manufacture method that is applied to the substrate of soft photoelectric device, comprise the following steps: to provide a prop carrier; Cover one first material layer on this prop carrier with one first area; Cover one second material layer on this first material layer and this prop carrier with a second area, wherein this second area is more than or equal to this first area; And cover a flexible base plate on this second material layer, this first material layer and this prop carrier with one the 3rd area, wherein the 3rd area greater than this second area and this flexible base plate to the density of this prop carrier greater than the density of this first material layer to this prop carrier.
The invention has the advantages that: substrate provided by the invention and forming method thereof can be made by existing semiconductor equipment and be applied to soft photoelectric device (for example active flexible display).Baseplate material, inorganic oxide or nitride material, separated type material and glass that the present invention will have solution state are made into a specific multilager base plate jointly.This substrate can utilize equipment making photoelectric device or display devices such as existing semiconductor, after finishing all processing procedures of this device, utilize cutting mode along the release layer two ends of substrate or its inboard draw disconnected, can be easily with this device from separation on glass.Opposite side because of this photoelectric device has a preformed inorganic oxide or nitration case again, can form stress regulation and control mechanism, and then reaches the stress equilibrium effect.It mainly is to utilize solution state baseplate material and the excellent characteristic of glass adherence, make and take shape in substrate on glass and in processing procedure, can not come off, and separated type material and glass adherence are bad, so after finishing all device processing procedures and excising unnecessary base material, can easily device be separated with glass, between release layer (first material layer) and substrate film, import the inorganic oxide or the nitride layer of a proper area size simultaneously, can form stress regulation and control mechanism, reach the stress equilibrium effect.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below:
Description of drawings
Fig. 1 is a kind of substrate generalized section that is applied to the soft electronic device according to one embodiment of the invention;
Fig. 2 A～2D is a kind of manufacture of substrates generalized section that is applied to the soft electronic device of one embodiment of the invention;
Wherein, main devices symbol description:
10～substrate; 12～prop carrier;
14～the first material layers; 15～the second material layers;
16～flexible base plate; A1, A2, A3～area coverage;
C, C '～excision point.
Embodiment
See also Fig. 1,, illustrate that of the present invention one is applied to the substrate of soft electronic device according to an embodiment.Substrate 10 comprises a prop carrier 12, one first material layer 14, one second material layer 15 and a flexible base plate 16.First material layer 14 covers prop carrier 12 with one first area A 1.Second material layer 15 covers first material layer 14 and prop carrier 12 with a second area A2.It should be noted that second area A2 is more than or equal to first area A 1.Flexible base plate 16 covers second material layer 15, first material layer 14 and prop carrier 12 with one the 3rd area A 3.It should be noted that the 3rd area A 3 is greater than the density of second area A2 and 16 pairs of prop carriers 12 of the flexible base plate density greater than 14 pairs of prop carriers 12 of first material layer.
If when flexible base plate 16 is clear polyimides (PI), can have following chemical formula:
In the above-mentioned chemical formula, A can be
X and Y be hydrogen, methyl, trifluoromethyl, hydroxyl ,-OR, bromine, chlorine or iodine, R is the alkyl of carbon number 1～18, Z is-O-,-CH
2-,-C (CH
3)
2-,-SO
2-,-Ar-O-Ar-,-Ar-CH2-Ar-,-Ar-C (CH
3)
2-Ar-or-Ar-SO
2-Ar-, Ar are phenyl ring.B can be
X and Y be hydrogen, methyl, trifluoromethyl, hydroxyl ,-OR, bromine, chlorine or iodine, R is the alkyl of carbon number 1～18, Z is-O-,-CH
2-,-C (CH
3)
2-,-SO
2-,-Ar-O-Ar-,-Ar-CH
2-Ar-,-Ar-C (CH
3)
2-Ar-or-Ar-SO
2-Ar-, Ar are phenyl ring.N is the integer greater than 1.
Also can add silicone compounds (for example " amino-contained siloxanes ", " containing the epoxy radicals siloxanes ") or silicon dioxide in the flexible base plate 16, to increase the density of 16 pairs of prop carriers 12 of flexible base plate.
Fig. 2 A～2D is a kind of manufacture method that is applied to the substrate of soft electronic device of explanation one embodiment of the invention.
See also Fig. 2 A, at first, provide a prop carrier 12.Then, cover one first material layer 14 on prop carrier 12 in for example mode of coating or evaporation.The area coverage of first material layer 14 is one first area A 1.Afterwards, cover one second material layer 15 on first material layer 14 and prop carrier 12 with a second area A2.It should be noted that second area A2 is more than or equal to first area A 1.
Then, see also Fig. 2 B, cover a flexible base plate 16 on second material layer 15, first material layer 14 and prop carrier 12 in the mode that for example is coated with.Flexible base plate 16 covers second material layer 15, first material layer 14 is one the 3rd area A 3 with the area of prop carrier 12.It should be noted that the 3rd area A 3 is greater than the density of second area A2 and 16 pairs of prop carriers 12 of the flexible base plate density greater than 14 pairs of prop carriers 12 of first material layer.After baking, promptly finish substrate of the present invention, this substrate can utilize equipment making photoelectric device or display devices such as existing semiconductor.
Then, seeing also Fig. 2 C, serves as excision point (C, C ') with the two-end-point of first material layer 14 or its inboard, and cut-out flexible base plate 16 and prop carrier 12 are to separate first material layer 14, flexible base plate 16 and prop carrier 12, shown in Fig. 2 D.
[embodiment]
The present invention will make glass that TFT uses earlier and carry out first material layer (release layer) and make, and for example the evaporation Parylene can utilize the hollow pad that varies in size to control the release layer area.Afterwards, plate for example second material layer (stress regulation and control layer) of aluminium oxide or silica of one deck.The area of second material layer can be more than or equal to the first material layer area.Again the solution state baseplate material is coated with Parylene (first material layer) and second material layer is on glass to coat than large tracts of land (greater than the area of second material layer), after drying, promptly form the present invention and can be used for making for example substrate of active flexible display.Equipment making photoelectric device or display devices such as the existing semiconductor of this substrate utilization, after finishing all processing procedures of this device, utilize cutting mode along the release layer two ends of substrate or its inboard draw disconnected, can be easily with this device from separation on glass.
The making of [embodiment 1] polyimides B1317-BAPPm (SiO2/BB37)/aluminium oxide/Parylene/glass substrate
At first, at room temperature, 3 grams are dissolved in the silicon dioxide (SiO of dimethylacetylamide (hereinafter to be referred as DMAc) with solid content 20%
2) put into sample bottle with 7 grams with the B1317-BAPPm (BB) that solid content 20% is dissolved in DMAc.Then, add amino-contained siloxanes---3-(trimethoxy the is silica-based) propylamine (3-(Trimethoxysilyl) propylamine) of 0.3 gram, under room temperature, stirred 30 minutes.Afterwards, coat in the scraper mode and to be coated with the on glass of the thick aluminium oxide of the thick Parylene of 100nm and 100nm, and put into baking oven and under 80 ℃ and 150 ℃, respectively toasted 1 hour, can obtain substrate of the present invention.Parylene is prepared by hot evaporation mode.Aluminium oxide (Al
2O
3) be to utilize RF magnetic control sputtering plating mode prepared, its radio-frequency power is 200W, and operating pressure is 2mtorr, and the atmosphere flow is 13sccm Ar.And the area of aluminium oxide is greater than the area of Parylene.
The BB that wherein abridges representative is by the polyimides macromolecule of BAPP-m and the synthetic gained of B1317, and its concrete synthetic method is used three-necked bottle and passed to nitrogen, with 0.0147mole's at room temperature
(BAPP-m diphenylamines) dissolve in 32.94g between-cresols (m-cresol) in.Treat the BAPPm diphenylamines dissolve fully after again with 0.015mole's
(B1317 dicarboxylic anhydride) adds, and after B1317 dissolves fully, continues to stir 1 hour, and forms thick polyamic acid solution.Then, be heated to 220 ℃ 3 hours, in this course of reaction, with de-watering apparatus water is got rid of simultaneously.Reactant liquor splashed into make polyimides precipitation in the methyl alcohol, and oven dry 12 hours in vacuum drying oven, polyimides B1317-BAPPm (BB) can be obtained.
The making of [embodiment 2] polyimides B1317-BAPPm (SiO2/BB37)/aluminium oxide/Parylene/glass substrate
At first, at room temperature, 3 grams are dissolved in the silicon dioxide (SiO of DMAc with solid content 20%
2) put into sample bottle with 7 grams with the B1317-BAPPm (BB) that solid content 20% is dissolved in DMAc.Then, add amino-contained siloxanes---the silica-based propylamine of 3-triethoxy (3-Triethoxysilylpropylamine) of 0.3 gram, under room temperature, stirred 30 minutes.Afterwards, coat in the scraper mode and to be coated with the on glass of 100nm Parylene and 250nm aluminium oxide, and put into baking oven and under 80 ℃ and 150 ℃, respectively toasted 1 hour, can obtain substrate of the present invention.Parylene is prepared by hot evaporation mode.Aluminium oxide (Al
2O
3) be to utilize RF magnetic control sputtering plating mode prepared, its radio-frequency power is 200W, and operating pressure is 2mtorr, and the atmosphere flow is 13sccm Ar.And the area of aluminium oxide is greater than the area of Parylene.
The making of [embodiment 3] polyimides B1317-BAPPm (SiO2/BB37)/aluminium oxide/Parylene/glass substrate
At first, at room temperature, 3 grams are dissolved in the silicon dioxide (SiO of DMAc with solid content 20%
2) put into sample bottle with 7 grams with the B1317-BAPPm (BB) that solid content 20% is dissolved in DMAc.Then, add amino-contained siloxanes---the aminopropyl-methyl-diethoxy silane (Aminopropyl-methyl-diethoxysilane) of 0.3 gram, under room temperature, stirred 30 minutes.Afterwards, coat in the scraper mode and to be coated with the on glass of 100nm Parylene and 450nm aluminium oxide, and put into baking oven and under 80 ℃ and 150 ℃, respectively toasted 1 hour, can obtain substrate of the present invention.Parylene is prepared by hot evaporation mode.Aluminium oxide (Al
2O
3) be to utilize RF magnetic control sputtering plating mode prepared, its radio-frequency power is 200W, and operating pressure is 2mtorr, and the atmosphere flow is 13sccm Ar.And the area of aluminium oxide is greater than the area of Parylene.
The making of [embodiment 4] polyether sulfones (PES)/aluminium oxide/Parylene/glass substrate
At first, at room temperature, 2 gram polyether sulfone macromolecules and 8 gram DMAc are put into sample bottle.Then, what add 0.1 gram contains epoxy radicals siloxanes (Glycidoxypropyltrimethoxysilane), stirs 30 minutes under room temperature.Afterwards, coat in the scraper mode and to be coated with the on glass of 100nm Parylene and 250nm aluminium oxide, and put into baking oven and under 80 ℃ and 150 ℃, respectively toasted 1 hour, can obtain substrate of the present invention.Parylene is prepared by hot evaporation mode.Aluminium oxide (Al
2O
3) be to utilize RF magnetic control sputtering plating mode prepared, its radio-frequency power is 200W, and operating pressure is 2mtorr, and the atmosphere flow is 13sccm Ar.And the area of aluminium oxide is greater than the area of Parylene.
The making of [comparing embodiment 1] polyimides B1317-BAPPm (SiO2/BB37)/Parylene/glass substrate
At first, at room temperature, 3 grams are dissolved in the silicon dioxide (SiO of DMAc with solid content 20%
2) put into sample bottle with 7 grams with the B1317-BAPPm (BB) that solid content 20% is dissolved in DMAc.Then, add the amino-contained siloxanes of 0.2 gram, under room temperature, stirred 30 minutes.Afterwards, coat in the scraper mode and to be coated with the on glass of Parylene, and put into baking oven and under 80 ℃ and 150 ℃, respectively toasted 1 hour, can obtain a substrate.
After finishing aforesaid substrate and making, as long as electronic device is made in the scope that contains release layer, treat that entire device is finished after, in the border of release layer or inboard substrate is cut off, can easily substrate and electronic device be separated with glass.
Table 1 be the embodiment of the invention 1～4 with comparing embodiment 1 in the warpage degree of release metacoxal plate.
Table 1
| The warpage state | |
| Embodiment 1 | - |
| Embodiment 2 | + |
| Embodiment 3 | ++ |
| Embodiment 4 | ++ |
| Comparing |
-- |
--: be bent downwardly after release-: smooth no warpage+: be bent upwards ++: seriously be bent upwards
As seen from Table 1, the present invention is in being provided with one between release layer (first material layer) and the flexible base plate for example behind the stress regulation and control layer of aluminium oxide (second material layer), can make substrate after release by being bent downwardly of stress regulation and control layer is not set originally, be adjusted into aspect smooth or that be bent upwards, this crooked aspect promptly produces the effect of a splendid stress equilibrium in successive process.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention is as the criterion when looking the scope that the accompanying Claim book defined.
Claims (12)
1. substrate that is applied to the soft electronic device comprises:
One prop carrier;
One first material layer covers this prop carrier with one first area;
One second material layer covers this first material layer and this prop carrier with a second area, and wherein this second area is more than or equal to this first area; And
One flexible base plate, cover this second material layer, first material layer and this prop carrier with one the 3rd area, wherein the 3rd area greater than this second area and this flexible base plate to the density of this prop carrier greater than the density of this first material layer to this prop carrier.
2. the substrate that is applied to the soft electronic device according to claim 1, wherein this prop carrier is glass or Silicon Wafer.
3. the substrate that is applied to the soft electronic device according to claim 1, wherein this first material layer is 0B to the density of this prop carrier, described flexible base plate is 1～5B to the density of described prop carrier.
4. the substrate that is applied to the soft electronic device according to claim 1, wherein this first material layer layer that material constituted that is Parylene or cyclenes copolymer.
5. the substrate that is applied to the soft electronic device according to claim 1, wherein this second material layer layer that material constituted that is inorganic oxide, inorganic nitride or metal.
6. the substrate that is applied to the soft electronic device according to claim 1, wherein this second material layer is aluminium oxide, silica or silicon nitride.
7. the substrate that is applied to the soft electronic device according to claim 1, wherein the thickness of this second material layer is 50～1000nm.
8. the substrate that is applied to the soft electronic device according to claim 1, wherein this flexible base plate is polyimides, Merlon, polyether sulfone, polyacrylate, poly-field ice alkene, PETG, polyether-ether-ketone, PEN or Polyetherimide.
9. the substrate that is applied to the soft electronic device according to claim 8, wherein this polyimides has following chemical formula:
Wherein
A is
X and Y be hydrogen, methyl, trifluoromethyl, hydroxyl ,-OR, bromine, chlorine or iodine, R is the alkyl of carbon number 1～18, Z is-O-,-CH
2-,-C (CH
3)
2-,-SO
2-,-Ar-O-Ar-,-Ar-CH
2-Ar-,-Ar-C (CH
3)
2-Ar-or-Ar-SO
2-Ar-, Ar are phenyl ring;
B is
X and Y be hydrogen, methyl, trifluoromethyl, hydroxyl ,-OR, bromine, chlorine or iodine, R is the alkyl of carbon number 1～18, Z is-O-,-CH
2-,-C (CH
3)
2-,-SO
2-,-Ar-O-Ar-,-Ar-CH
2-Ar-,-Ar-C (CH
3) 2
-Ar-or-Ar-SO
2-Ar-, Ar are phenyl ring; And
N is the integer greater than 1.
10. the substrate that is applied to the soft electronic device according to claim 8, wherein this flexible base plate also comprises a silicone compounds or silicon dioxide.
11. a manufacture method that is applied to the substrate of soft electronic device comprises:
One prop carrier is provided;
Cover one first material layer on this prop carrier with one first area;
Cover one second material layer on this first material layer and this prop carrier with a second area, wherein this second area is more than or equal to this first area; And
Cover a flexible base plate on this second material layer, this first material layer and this prop carrier with one the 3rd area, wherein the 3rd area greater than this second area and this flexible base plate to the density of this prop carrier greater than the density of this first material layer to this prop carrier.
12. the manufacture method that is applied to the substrate of soft electronic device according to claim 11, comprise that also two-end-point or its inboard with this first material layer are the excision point, this flexible base plate of cut-out and this prop carrier are to separate this first material layer and this flexible base plate and this prop carrier.
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|---|---|---|---|
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