CN101996877B - Etching method and method for forming shallow trench isolation structure - Google Patents
Etching method and method for forming shallow trench isolation structure Download PDFInfo
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- CN101996877B CN101996877B CN2009100564535A CN200910056453A CN101996877B CN 101996877 B CN101996877 B CN 101996877B CN 2009100564535 A CN2009100564535 A CN 2009100564535A CN 200910056453 A CN200910056453 A CN 200910056453A CN 101996877 B CN101996877 B CN 101996877B
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Abstract
The invention discloses an etching method, which comprises the following steps of: providing a monocrystalline silicon substrate; forming a patterned etching barrier layer on the surface of the monocrystalline silicon substrate; and etching a region which is not covered by the patterned etching barrier layer in the monocrystalline silicon substrate by adopting plasma etching technology. The step of etching the monocrystalline silicon substrate further comprises the following steps of: performing first etching on the monocrystalline silicon substrate by adopting plasma formed by a first etching gas; and performing second etching on the monocrystalline silicon substrate by adopting plasma formed by a second etching gas, wherein the etching uniformity of the first etching gas is higher than that of the second etching gas, and the capacity of forming an inclined side wall of the second etching gas is superior to that of the first etching gas. The etching method has the advantages that: a trench with the inclined side wall is formed on the surface of the monocrystalline silicon substrate by etching twice, and the depth uniformity of the trench is guaranteed.
Description
[technical field]
The present invention relates to integrated circuit and make the field, the method that relates in particular to lithographic method and form fleet plough groove isolation structure.
[background technology]
Shallow trench isolation is from being the most common a kind of isolation technology of present integrated circuit fields.Key one step of shallow ditch groove separation process is to form on the monocrystalline substrate surface that shape is consistent, the uniform groove of the degree of depth, and fill oxide therein then is to form fleet plough groove isolation structure.
The technology that forms shallow trench in the prior art mainly is dry etching.Accompanying drawing 1 is a kind of implementation step flow chart that is used to form the lithographic method of groove among the prior art, comprises the steps: step S10, and monocrystalline substrate is provided; Step S11 forms patterned etching barrier layer on the monocrystalline substrate surface; Step S13, the not graphical etching barrier layer region covered of the said monocrystalline substrate of using plasma etching technics etching.
Shown in the accompanying drawing 2, refer step S10 provides monocrystalline substrate 100.
Shown in the accompanying drawing 3, refer step S11 forms patterned etching barrier layer 110 on monocrystalline substrate 100 surfaces.
The material of said etching barrier layer can be silica or silicon nitride, also can be both or multiple-level stack structure that other materials constituted.Adopt chemical deposition to form etching barrier layer 110, and adopt the method for photoetching to implement graphical technology on said monocrystalline substrate surface.
The material of said etching barrier layer also can be a photoresist.
Shown in the accompanying drawing 4, refer step S12, the said monocrystalline substrate 100 of using plasma etching technics etching.
The etching gas that contains hydrogen bromide (HBr) is a kind of etching gas that is used to excite the formation plasma comparatively common in the prior art, for example HBr/O
2/ SF
6Mist perhaps also can adopt and contain HBr and Cl simultaneously
2Gas as etching gas.Above content please refer to article In-Situ Shallow trenchIsolation Etch With Clean Chemistry; Xikun Wang; Scott Williams, NallanPadmapani, and Shaoher Pan; 1998 IEEE/CMPT Int ' l Electrons ManufacturingTechnology Symposium, Page 150-154.Etching gas is excited on monocrystalline substrate 100 surfaces and forms plasma and react in the monocrystalline silicon that exposes, thereby forms grooves on monocrystalline substrate 100 surfaces, and this sentences groove 121,122 and 123 expressions.Form under the situation of a plurality of grooves on monocrystalline substrate 100 surfaces, adopt the gas that contains HBr to be to guarantee the uniformity of the degree of depth between a plurality of grooves as the advantage of etching gas.
Though prior art adopts the gas that contains HBr can obtain uniform gash depth as etching gas, its shortcoming also clearly.When adopting HBr as etching gas; The sidewall of groove is steep; For shallow ditch groove separation process; Have the groove of steep sidewall and be unfavorable for follow-up in groove fill oxide, and the angle of horizontal plane of sidewall and substrate surface of hoping groove forms the groove with sloped sidewall greater than 90 degree.
[summary of the invention]
Technical problem to be solved by this invention is, a kind of lithographic method is provided, and can form the groove with sloped sidewall on the monocrystalline substrate surface, to be fit to the technology of follow-up shallow ditch groove separation process or other needs sloped sidewall grooves.
In order to address the above problem, the invention provides a kind of lithographic method, comprise the steps: to provide monocrystalline substrate; Form patterned etching barrier layer on the monocrystalline substrate surface; And not graphical etching barrier layer region covered in the said monocrystalline substrate of using plasma etching technics etching.The step of said etching monocrystalline substrate further comprises: the plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first time, etching can form the uniform groove of the degree of depth in monocrystalline substrate; And the plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said second time, etching can make groove have angled side walls.Promptly the etching homogeneity of first etching gas is higher than second etching gas, and the ability of second gas formation sloped sidewall is superior to first gas.
As optional technical scheme, contain hydrogen bromide and chlorine in said first etching gas; Contain fluoro-gas in said second etching gas.
As optional technical scheme, said fluoro-gas is selected from NF
3, CH
3F, CH
2F
2, CHF
3And CF
4In one or more.The scope of the ambient pressure of substrate is 0.8～8 handkerchief, and the duration of adopting plasma to carry out etching is no less than 36 seconds.
As optional technical scheme, said first time etching processing step in, the ratio range between the molecule number of hydrogen bromide and the molecule number of chlorine is 2 to 4.The scope of the ambient pressure of substrate is 1～10 handkerchief, and the duration of adopting plasma to carry out etching is no less than 60 seconds.
The present invention also further provides a kind of method that forms fleet plough groove isolation structure, comprises the steps to provide monocrystalline substrate; Form patterned etching barrier layer on the monocrystalline substrate surface; And not graphical etching barrier layer region covered in the said monocrystalline substrate of using plasma etching technics etching, to form groove; Remove etching barrier layer; Monocrystalline substrate surface having groove forms dielectric layer, and said dielectric layer all fills up groove; And the abrasive media layer is to exposing monocrystalline substrate.The step of said etching monocrystalline substrate further comprises: the plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first time, etching can form the uniform groove of the degree of depth in monocrystalline substrate; And the plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said second time, etching can make groove have angled side walls.Promptly the etching homogeneity of first etching gas is higher than second etching gas, and the ability of second gas formation sloped sidewall is superior to first gas.
As optional technical scheme, contain hydrogen bromide and chlorine in said first etching gas; Contain fluoro-gas in said second etching gas.
As optional technical scheme, said fluoro-gas is selected from NF
3, CH
3F, CH
2F
2, CHF
3And CF
4In one or more.Said second time etching processing step in, the ambient pressure scope of substrate is 0.8～8 handkerchief, said second time etching processing step in, the duration of adopting plasma to carry out etching is no less than 36 seconds.
As optional technical scheme, said first time etching processing step in, the ratio range between the molecule number of hydrogen bromide and the molecule number of chlorine is 2 to 4.Said first time etching processing step in, the scope that the ambient pressure of substrate is is 1～10 handkerchief, said first time etching processing step in, the duration of adopting plasma to carry out etching is no less than 60 seconds.
The invention has the advantages that; Adopted twice etching to form groove with sloped sidewall on the monocrystalline substrate surface; And guarantee the uniformity of its degree of depth; And the preferred gas that contains hydrogen bromide and chlorine that adopts adopts and contains fluorine-containing gas as second etching gas as in first etching gas.Because for the first time the resulting trenched side-wall of etching is steep, so the present invention further carries out the etching second time, to improve the sidewall of groove.The consistency of fluoro-gas etching depth in the process of etch silicon (being the etching uniformity) is not as hydrogen bromide and chlorine; The groove that etching obtains is deep mixed; Therefore the etching technics that seldom is used for monocrystalline silicon, but this kind of experiment discovery technology obtains angled side walls easily.Therefore the further preferred fluoro-gas of the present invention is implemented etching for the second time as second etching gas, to improve the pattern of groove.
[description of drawings]
Accompanying drawing 1 is a kind of implementation step flow chart that is used to form the lithographic method of groove among the prior art
Accompanying drawing 2 to accompanying drawing 4 is a kind of process schematic representations that are used to form the lithographic method of groove among the prior art;
Accompanying drawing 5 is implementation step flow charts of the embodiment of lithographic method provided by the invention
Accompanying drawing 6 to accompanying drawing 9 is process schematic representations of the embodiment of lithographic method provided by the invention;
Accompanying drawing 10 is implementation step flow charts of embodiment of the method for formation fleet plough groove isolation structure provided by the invention
Accompanying drawing 11 to accompanying drawing 13 is process schematic representations of embodiment of the method for formation fleet plough groove isolation structure provided by the invention.
[embodiment]
Elaborate below in conjunction with the embodiment of accompanying drawing to the method for lithographic method provided by the invention and formation fleet plough groove isolation structure.
At first provide the embodiment of lithographic method according to the invention.
Accompanying drawing 5 is process charts of this embodiment, comprising: step S20 provides monocrystalline substrate; Step S21 forms patterned etching barrier layer on the monocrystalline substrate surface; Step S22, the plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first time, etching can form the uniform groove of the degree of depth in monocrystalline substrate; Step S23, the plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said second time, etching can make groove have angled side walls.
In this embodiment, contain hydrogen bromide and chlorine in said first etching gas; Contain fluoro-gas in said second etching gas.
Shown in the accompanying drawing 6, refer step S20 provides monocrystalline substrate 200.
Shown in the accompanying drawing 7, refer step S21 forms patterned etching barrier layer 210 on monocrystalline substrate 200 surfaces.
The material of said etching barrier layer can be silica or silicon nitride, also can be both or multiple-level stack structure that other materials constituted.Adopt chemical deposition to form etching barrier layer 210, and adopt the method for photoetching to implement graphical technology on said monocrystalline substrate surface.
If desire formation gash depth is more shallow in the subsequent technique, the material of then said etching barrier layer 210 also can be a photoresist.
Shown in the accompanying drawing 8, refer step S22, the plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first time, etching can form the uniform groove of the degree of depth in monocrystalline substrate.After this step is implemented to finish, form groove on substrate 200 surfaces, this embodiment is with groove 231,232 and 233 expressions.
Etching adopts the gas that contains hydrogen bromide and chlorine as first etching gas for the first time; Utilized the advantage of the high conformity of gash depth in the plasma etching silicon technology that hydrogen bromide and chlorine forms, purpose is to obtain the consistent a plurality of grooves 231,232 and 233 of the degree of depth.But adopt the gas contain hydrogen bromide and chlorine to be that as the shortcoming of etching gas the sidewall of groove is more steep; If need groove be filled with other materials in the subsequent technique; Have angled side walls and more help forming fine and close contact between packing material and the sidewall, can not leave the space.
As preferred etch technological condition, the ratio range between the molecule number of hydrogen bromide and the molecule number of chlorine is 2 to 4; In the etching process, the scope of the ambient pressure of substrate is 1～10 handkerchief, preferred 5 handkerchiefs; The duration of adopting plasma to carry out etching is no less than 60 seconds.Certainly, adopt the technological parameter outside the above-mentioned scope also can implement the said technology of this step, show, adopt the parameter in the above-mentioned scope can obtain optimal results but test.
Can also contain oxygen and CH in said first etching gas
2F
2Etc. the etching assist gas, be used for further strengthening etching groove degree of depth consistency.
Shown in the accompanying drawing 9, refer step S23, the plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said second time, etching can make groove have angled side walls.
Etching adopts fluoro-gas as second etching gas for the second time, and said fluoro-gas is selected from NF
3, CH
3F, CH
2F
2, CHF
3And CF
4In one or more, preferred NF
3With CHF
3Mist, both mixed proportions are 1: 2 to 1: 5 (molecule numbers than).In the processing step of etching, the scope of the ambient pressure of substrate is 0.8～8 handkerchief for the second time, and the duration of adopting plasma to carry out etching is no less than 36 seconds.Certainly, adopt the technological parameter outside the above-mentioned scope also can implement the said technology of this step, show, adopt the parameter in the above-mentioned scope can obtain optimal results but test.
Owing to adopt hydrogen bromide and chlorine as the resulting trenched side-wall of etching gas steep (please refer to accompanying drawing 8), so this embodiment further adopted the etching second time, to improve the sidewall of groove.Etching adopts fluoro-gas can obtain above-mentioned effect for the second time.The consistency of fluoro-gas etching depth in the process of etch silicon is not as hydrogen bromide and chlorine, and the groove that etching obtains is deep mixed, therefore seldom is used for the etching technics of monocrystalline silicon, finds that this kind technology obtains angled side walls easily but test.Therefore this embodiment is further implemented etching for the second time, adopt fluoro-gas as etching gas to improve the pattern of groove.
Next combine accompanying drawing to provide the embodiment of the method for formation fleet plough groove isolation structure according to the invention.
Be the process chart of this embodiment shown in the accompanying drawing 10, comprise: step S30 provides monocrystalline substrate; Step S31 forms patterned etching barrier layer on the monocrystalline substrate surface; Step S32, the plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first time, etching can form the uniform groove of the degree of depth in monocrystalline substrate; Step S33, the plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said second time, etching can make groove have angled side walls; Step S34 removes etching barrier layer; Step S35 forms dielectric layer on the monocrystalline substrate surface with groove, and said dielectric layer all fills up groove; Step S36, the abrasive media layer is to exposing monocrystalline substrate.
Step S30 details to the processing step of step S33 and holds within please refer to described in the last embodiment in this embodiment.The structure that step S33 is obtained after implementing to finish also can be further with reference to the content in the accompanying drawing 9.
Following emphasis combines accompanying drawing 11 to accompanying drawing 13, and the step S34 to S36 of this embodiment is specified.
Shown in the accompanying drawing 11, refer step S34 removes etching barrier layer, forms the surface and has the monocrystalline substrate 300 of groove 321,322 and 323.
Said removal etching barrier layer can adopt selective corrosion technology, comprises dry etching and wet etching etc.
Shown in the accompanying drawing 12, refer step S35 forms dielectric layer 330 on 300 surfaces of the monocrystalline substrate with groove 321,322 and 323, and said dielectric layer 330 all fills up groove 321,322 and 323.
Form dielectric layer 330 and can select methods such as chemical deposition.Because the material of flute surfaces also is a monocrystalline silicon, so dielectric layer 330 not only can also form in groove 321,322 and 323 in the formation of the surface of monocrystalline substrate 300.The material of said dielectric layer 330 can be the multi-layer compound structure that silica, silicon nitride perhaps are made up of both.
Shown in the accompanying drawing 13, refer step S36, abrasive media layer 330 is to exposing monocrystalline substrate 300.
Said grinding technics can adopt chemico-mechanical polishing or other similar means.Be ground to and expose monocrystalline substrate 330, and the dielectric layer of filling in the groove will obtain keeping.Thereby be filled with the monocrystalline substrate 300 of dielectric material 341,342 and 343 in the formation groove, with the fleet plough groove isolation structure of realizing isolating each other between the different components.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (18)
1. a lithographic method comprises the steps:
Monocrystalline substrate is provided;
Form patterned etching barrier layer on the monocrystalline substrate surface; And
Not graphical etching barrier layer region covered in the said monocrystalline substrate of using plasma etching technics etching;
It is characterized in that the step of said etching monocrystalline substrate further comprises:
The plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first etching gas can form a plurality of grooves in monocrystalline substrate, and has homogeneity between the degree of depth that said groove had; And
The plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said second etching gas continues the etching formed groove of etching for the first time, can make above-mentioned groove further become the groove with sloped sidewall.
2. lithographic method according to claim 1 is characterized in that, contains hydrogen bromide and chlorine in said first etching gas.
3. lithographic method according to claim 1 is characterized in that, contains fluoro-gas in said second etching gas.
4. lithographic method according to claim 3 is characterized in that said fluoro-gas is selected from NF
3, CH
3F, CH
2F
2, CHF
3And CF
4In one or more.
5. according to any described lithographic method in the claim 1 to 4, it is characterized in that, said second time etching processing step in, the scope of the ambient pressure of substrate is 0.8～8 handkerchief.
6. according to any described lithographic method in the claim 1 to 4, it is characterized in that, said second time etching processing step in, the duration of adopting plasma to carry out etching is no less than 36 seconds.
7. according to any described lithographic method in the claim 1 to 4, it is characterized in that, said first time etching processing step in, the ratio range between the molecule number of hydrogen bromide and the molecule number of chlorine is 2 to 4.
8. lithographic method according to claim 7 is characterized in that, said first time etching processing step in, the scope of the ambient pressure of substrate is 1～10 handkerchief.
9. lithographic method according to claim 7 is characterized in that, said first time etching processing step in, the duration of adopting plasma to carry out etching is no less than 60 seconds.
10. a method that forms fleet plough groove isolation structure comprises the steps
Monocrystalline substrate is provided;
Form patterned etching barrier layer on the monocrystalline substrate surface;
Not graphical etching barrier layer region covered in the said monocrystalline substrate of using plasma etching technics etching is to form groove;
Remove etching barrier layer;
Monocrystalline substrate surface having groove forms dielectric layer, and said dielectric layer all fills up groove; And
The abrasive media layer is to exposing monocrystalline substrate;
It is characterized in that the step of said etching monocrystalline substrate further comprises:
The plasma that adopts first etching gas to form carries out the etching first time to monocrystalline substrate, and said first time, etching can form a plurality of grooves in monocrystalline substrate, and had homogeneity between the degree of depth that said groove had; And
The plasma that adopts second etching gas to form carries out the etching second time to monocrystalline substrate, and said etching continuation second time etching is the formed groove of etching for the first time, above-mentioned groove is further become have angled side walls;
The etching homogeneity of said first etching gas is higher than second etching gas, and the ability of second etching gas formation sloped sidewall is superior to first etching gas.
11. the method for formation fleet plough groove isolation structure according to claim 10 is characterized in that, contains hydrogen bromide and chlorine in said first etching gas.
12. the method for formation fleet plough groove isolation structure according to claim 10 is characterized in that, contains fluoro-gas in said second etching gas.
13. the method for formation fleet plough groove isolation structure according to claim 12 is characterized in that, said fluoro-gas is selected from NF
3, CH
3F, CH
2F
2, CHF
3And CF
4In one or more.
14. the method according to any described formation fleet plough groove isolation structure of claim 10 to 13 is characterized in that, said second time etching processing step in, the ambient pressure scope of substrate is 0.8～8 handkerchief.
15. the method according to any described formation fleet plough groove isolation structure of claim 10 to 13 is characterized in that, said second time etching processing step in, the duration of adopting plasma to carry out etching is no less than 36 seconds.
16. the method according to any described formation fleet plough groove isolation structure of claim 10 to 13 is characterized in that, said first time etching processing step in, the ratio range between the molecule number of hydrogen bromide and the molecule number of chlorine is 2 to 4.
17. the method for formation fleet plough groove isolation structure according to claim 16 is characterized in that, said first time etching processing step in, the scope of the ambient pressure of substrate is 1～10 handkerchief.
18. the method for formation fleet plough groove isolation structure according to claim 16 is characterized in that, said first time etching processing step in, the duration of adopting plasma to carry out etching is no less than 60 seconds.
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| CN104752197B (en) * | 2013-12-29 | 2017-10-13 | 北京北方华创微电子装备有限公司 | Substrate lithographic method |
| CN112466750A (en) * | 2020-11-18 | 2021-03-09 | 安徽熙泰智能科技有限公司 | Etching method, micro OLED and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148120B2 (en) * | 2004-09-23 | 2006-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming improved rounded corners in STI features |
| CN101308843A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Shallow groove isolation construction and manufacture process the construction |
| CN101459066A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Gate, shallow slot isolation region forming method and flattening method for silicon base etching surface |
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2009
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148120B2 (en) * | 2004-09-23 | 2006-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming improved rounded corners in STI features |
| CN101308843A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Shallow groove isolation construction and manufacture process the construction |
| CN101459066A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Gate, shallow slot isolation region forming method and flattening method for silicon base etching surface |
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