CN101994155B - Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof - Google Patents
Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof Download PDFInfo
- Publication number
- CN101994155B CN101994155B CN 201010564073 CN201010564073A CN101994155B CN 101994155 B CN101994155 B CN 101994155B CN 201010564073 CN201010564073 CN 201010564073 CN 201010564073 A CN201010564073 A CN 201010564073A CN 101994155 B CN101994155 B CN 101994155B
- Authority
- CN
- China
- Prior art keywords
- thermoelectric material
- nanophase
- bismuth telluride
- preparation
- dimention nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
The invention discloses a nanophase doped bismuth telluride-based thermoelectric material and a preparation method thereof. The bismuth telluride-based thermoelectric material is characterized in taking the bismuth telluride-based thermoelectric material containing a tellurium element, a bismuth element and a doped chemical element, as a matrix. The doped nanophase is a one-dimensional nanophase, and the weight of the one-dimensional nanophase accounts for 0.01-5 percent of the weight of the matrix. Attapulgite or a zinc oxide nanowire or a single-wall carbon nanotube or a multi-wall carbon nanotube is preferable to the one-dimensional nanophase. Compared with the prior art, in the bismuth telluride-based thermoelectric material, the lattice heat conductivity within the whole temperature zone range is reduced, thereby a ZT value is greatly improved and the thermoelectric performance of the bismuth telluride-based thermoelectric material is improved. The preparation method is simple and easy to implement, and compared with other methods of balling milling or liquid phase and the like, impurities are not easy to introduce in the preparation method so that the one-dimensional nanophase is evenly staggered and distributed in the matrix and the mechanical property of the material is effectively improved.
Description
Technical field
The invention belongs to field of thermoelectric material technique, be specifically related to adulterated bismuth telluride-base thermoelectric material of a kind of nanophase and preparation method thereof.
Background technology
Thermoelectric generation technology is that a kind of Seebeck effect of material of utilizing is directly changed into electric energy with heat energy or utilizes the peltier effect of material to carry out the refrigerating technology; This technology has characteristics such as movement-less part, safety height, life-span length and environmental friendliness, can be widely used in fields such as waste-heat power generation, space power system, medical treatment refrigeration, household refrigerating appliance.
Conversion efficiency of thermoelectric depends primarily on the non-dimensional thermoelectricity capability factor Z T of material, ZT=S
2σ T/ κ, wherein S is that Seebeck coefficient, σ are that specific conductivity, T are that T, κ are thermal conductivity.The ZT value of material is high more, and conversion efficiency of thermoelectric is just high more.An important channel of improving material ZT value is the lattice thermal conductivity κ that reduces material
L
Phonon transporting in solid receives the scattering of number of mechanisms, comprises phonon-phon scattering, crystal boundary scattering, point defect scattering and resonance scattering etc.For the Tellurobismuthite alloy, near this material that room temperature, has optimum thermoelectricity capability, the point defect scattering occupies major portion, and particularly on growing by zone melting crystalline (00l) direction of practical application, crystal boundary is few, a little less than the scattering to phonon, lattice thermal conductivity κ
LHigher.Combines with more weak Van der Waals force between the layer of Tellurobismuthite alloy and the layer, easy cleavage has influenced the workability of material and the safety of components and parts use.
Nanometer second often is introduced in the thermoelectric matrix as the phon scattering center, reaches to reduce lattice thermal conductivity κ
L,, thereby the purpose of raising ZT value.Phonon has the frequency distribution of broad, and the effective scattering of being on good terms of the nanometer of different size has the phonon of suitable wavelength accordingly.The nanoparticle of zero dimension often is used as nanometer second to be added in the thermoelectric matrix mutually; But in the Tellurobismuthite crystal of growing by zone melting; Nanoparticle can with crystal boundary migration, accumulate on the Tellurobismuthite crystal boundary along with growing up of Tellurobismuthite crystal grain usually in large quantities, can not form uniform dispersion.
Summary of the invention
The objective of the invention is the deficiency to prior art, adulterated bismuth telluride-base thermoelectric material of a kind of nanophase and preparation method thereof is provided, this nanophase is uniform distribution in bismuth telluride-base body heat electric material, has improved the thermoelectricity capability of bismuth telluride-base thermoelectric material.
The present invention realizes that the technical scheme that above-mentioned technical purpose adopts is: the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase; The bismuth telluride-base thermoelectric material of forming with tellurium element, bismuth element and alloying element is a matrix; Dopen Nano phase in matrix; Described nanophase is the 1-dimention nano phase, and the quality of described 1-dimention nano phase accounts for 0.01% to 5% of substrate quality.
As preferably, described 1-dimention nano is attapulgite, zinc oxide nanowire, single armed carbon nanotube or multi-walled carbon nano-tubes mutually.
As preferably, described alloying element is one or several in selenium, antimony and the iodine element.
As preferably, the diameter of described 1-dimention nano phase is 2nm～50nm, and length is 0.2 μ m～2 μ m.
The preparation method of the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase of the present invention comprises the steps:
Step 1:, take by weighing the corresponding simple substance of an amount of tellurium, bismuth and alloying element as matrix material according to the stoichiometric ratio of bismuth telluride-base thermoelectric material; Quality according to the 1-dimention nano phase accounts for 0.01% to 5% of substrate quality, takes by weighing 1-dimention nano phase powder;
Step 2: 1-dimention nano phase powder is placed the silica tube bottom, put into matrix material again, then silica tube is vacuumized sealing;
Step 3: silica tube is vertically placed in waving melting furnace; An end that is equipped with the 1-dimention nano phase down; Slowly be heated to 630 ℃～900 ℃ with 2 ℃/minute～8 ℃/minute temperature rise rates; Make matrix material melt gradually the back wetting entering 1-dimention nano mutually in, in this state the insulation 1 hour～4 hours;
Step 4: treat that 1-dimention nano fully waved fusion 0.5 hour～5 hours mutually after fully soaking into, take out silica tube then rapidly, place quenchant to carry out quenching;
Step 5: place zone melting furnace to carry out growing by zone melting the silica tube behind the quenching; District's melting temperatur is 600 ℃～900 ℃; The melting zone width is 10 millimeters～50 millimeters; Thermograde is 25 ℃/centimetre～50 ℃/centimetre, and the speed of growth is 20 millimeters/hour～30 millimeters/hour, obtains the mutually adulterated bismuth telluride-base thermoelectric material of 1-dimention nano.
In order to optimize above-mentioned preparation method, the measure of taking also comprises:
Adopt oxyhydrogen flame, acetylene flame or argon plasma flame to carry out vacuum-sealing in the described step 2;
Quenchant in the described step 4 is air, water, saturated brine, oil or liquid nitrogen;
In order further to improve the mechanical property of the bismuth telluride-base thermoelectric material that said step 5 obtains; Can this bismuth telluride-base thermoelectric material directly or after pulverizing be carried out pressure sintering; Sintering pressure is that 20MPa～200MPa, sintering temperature are 350 ℃～520 ℃, and sintering time is 5 minutes～120 minutes; Discharge plasma sintering or hot pressed sintering are adopted in described pressure sintering.
Compared with prior art; The present invention relates to the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase, is matrix with the bismuth telluride-base thermoelectric material, doped one-dimensional nanophase in matrix; Because 1-dimention nano has higher specific surface area mutually; Can form highdensity phase interface with the bismuth telluride-base body, thus scattering phonon effectively, and back 1-dimention nano uniform distribution in body material mixes; Perhaps intert in matrix grain, or the parallel crystal boundary that is distributed in matrix grain, reduced bismuth telluride-base thermoelectric material lattice thermal conductivity κ significantly
LThereby, in whole warm area scope, improved the ZT value of bismuth telluride-base thermoelectric material greatly, make it up to 1.40, therefore improved the thermoelectricity capability of bismuth telluride-base thermoelectric material.Because 1-dimention nanos such as attapulgite, carbon nanotube and zinc oxide nanowire have high melt point mutually, the matrix material after therefore mixing can be stablized use in the use temperature scope that is lower than 550K of bismuth telluride-base thermoelectric material in addition.
The preparation method who the present invention relates to the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase comprises batching, encapsulation, fusion, quenching and growing by zone melting totally five steps; The mode of wherein adopt pressureless penetration, waving fusion and quenching obtains 1-dimention nano homodisperse mother alloy in matrix; Then crystal bar is carried out the growing by zone melting preparation, finally obtain the mutually adulterated bismuth telluride-base thermoelectric material of 1-dimention nano, this preparation method compares other methods such as ball milling or liquid phase; Be difficult for introducing impurity; 1-dimention nano is dispersed in the matrix mutually evenly, alternately, can effectively improves the mechanical property of material, in addition; This preparation method simply is easy to realize having wide industrialization prospect.
Description of drawings
Fig. 1 is (Bi after ATP mixes among the embodiment 1
0.22Sb
0.78)
2Te
3The section surface sweeping electromicroscopic photograph of thermoelectric material;
Fig. 2 is (Bi before and after ATP mixes among the embodiment 1
0.22Sb
0.78)
2Te
3The lattice thermal conductivity κ of thermoelectric material
LGraph of a relation with temperature;
Fig. 3 is (Bi before and after ATP mixes among the embodiment 1
0.22Sb
0.78)
2Te
3The ZT value of thermoelectric material and the graph of a relation of temperature.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Embodiment 1:
The adulterated bismuth telluride-base thermoelectric material of nanophase, the bismuth telluride-base thermoelectric material of forming with tellurium element, bismuth element and antimony element is a matrix, the chemical molecular formula of this matrix is (Bi
0.22Sb
0.78)
2Te
3, doped one-dimensional nanophase attapulgite in matrix, attapulgite is called for short ATP, and the quality of 1-dimention nano phase attapulgite accounts for 0.5% of substrate quality.
The preparation method of the adulterated bismuth telluride-base thermoelectric material of above-mentioned nanophase is following:
Step 1: according to (Bi
0.22Sb
0.78)
2Te
3In stoichiometric ratio, take by weighing the block of high-purity matrix material tellurium, bismuth and antimony, account for 0.5% of substrate quality according to the quality of 1-dimention nano phase attapulgite and take by weighing the attapulgite powder;
Step 2: through 850 ℃ of thermal treatments and in air the 1-dimention nano phase attapulgite powder of insulation after 2 hours place the silica tube bottom, put into the bismuth telluride-base raw material again, encapsulate with the acetylene flame after the extracting vacuum;
Step 3: silica tube is vertically placed in waving melting furnace; An end that is equipped with 1-dimention nano phase attapulgite powder down; Slowly be heated to 750 ℃ with 3 ℃/minute temperature rise rates, matrix material is melted in the wetting entering attapulgite powder in back gradually, insulation is 2 hours in this state;
Step 4: in angle is 270 ° spatial dimension, waved fusion 2 hours, take out silica tube then rapidly, place saturated icy salt solution quenching;
Step 5: place zone melting furnace to carry out growing by zone melting the silica tube behind the quenching; District's melting temperatur is 800 ℃, and the melting zone width is 32 millimeters, and thermograde is 25 ℃/centimetre; The speed of growth is 30 millimeters/hour, obtains the bismuth telluride-base thermoelectric material of 1-dimention nano phase attapulgite powder last doping.
Fig. 1 is the section surface sweeping electromicroscopic photograph of the adulterated bismuth telluride-base thermoelectric material of 1-dimention nano phase attapulgite that obtains of step 5, and as can be seen from the figure attapulgite has formed uniform dispersion in matrix.
Fig. 2 and Fig. 3 are respectively (the Bi before and after attapulgite mixes
0.22Sb
0.78)
2Te
3The lattice thermal conductivity κ of thermoelectric material
LWith the ZT value with variation of temperature figure.As can be seen from Figure 2, owing to of the effective scattering of 1-dimention nano phase attapulgite to phonon, (the Bi after feasible the doping
0.22Sb
0.78)
2Te
3The lattice thermal conductivity κ of thermoelectric material
LIn whole warm area scope, significantly reduce, reduce by 73% during room temperature.As can be seen from Figure 3, (the Bi behind the doped one-dimensional nanophase attapulgite
0.22Sb
0.78)
2Te
3The ZT value of thermoelectric material all is greatly improved in whole warm area scope, and increase rate is up to 44% during 350K.
Embodiment 2:
The adulterated bismuth telluride-base thermoelectric material of nanophase, the bismuth telluride-base thermoelectric material of forming with tellurium element, bismuth element and antimony element is a matrix, the chemical molecular formula of this matrix is (Bi
0.22Sb
0.78)
2Te
3, doped one-dimensional nanophase attapulgite in matrix, the quality of 1-dimention nano phase attapulgite accounts for 0.05% of substrate quality.
The preparation method of the adulterated bismuth telluride-base thermoelectric material of above-mentioned nanophase is following:
Step 1: according to (Bi
0.22Sb
0.78)
2Te
3In stoichiometric ratio, take by weighing the block of high-purity matrix material tellurium, bismuth and antimony, account for 0.05% of substrate quality according to the quality of the mutually recessed attapulgite of 1-dimention nano and take by weighing the attapulgite powder;
Step 2: through 850 ℃ of thermal treatments and in air the 1-dimention nano phase attapulgite powder of insulation after 2 hours place the silica tube bottom, put into the bismuth telluride-base raw material again, encapsulate with the acetylene flame after the extracting vacuum;
Step 3: silica tube is vertically placed in waving melting furnace; An end that is equipped with 1-dimention nano phase attapulgite powder down; Slowly be heated to 630 ℃ with 1 ℃/minute temperature rise rate, matrix material is melted in the wetting entering attapulgite powder in back gradually, insulation is 4 hours in this state;
Step 4: in angle is 270 ° spatial dimension, waved fusion 1 hour, take out silica tube then rapidly, place the liquid nitrogen quenching;
Step 5: place zone melting furnace to carry out growing by zone melting the silica tube behind the quenching; District's melting temperatur is 900 ℃, and the melting zone width is 30 millimeters, and thermograde is 50 ℃/centimetre; The speed of growth is 20 millimeters/hour, obtains the bismuth telluride-base thermoelectric material of 1-dimention nano phase attapulgite powder last doping.
The lattice thermal conductivity κ of the bismuth telluride-base thermoelectric material of the 1-dimention nano phase attapulgite powder last doping that obtains
LIn whole warm area scope, significantly reduce, the ZT value all is greatly improved in whole warm area scope, minimum lattice thermal conductivity κ
LBe 0.32Wm
-1K
-1, maximum ZT value is 1.30 (375K).
Embodiment 3:
The adulterated bismuth telluride-base thermoelectric material of nanophase, the bismuth telluride-base thermoelectric material of forming with tellurium element, bismuth element, antimony element and iodine element is a matrix, the chemical molecular formula of this matrix is (Bi
0.92Se
0.08)
2Te
3/ 0.15wt.%TeI
4, i.e. TeI
4Account for 0.15% of substrate quality, doping single armed carbon nanotube (SCNT) in matrix, the quality of single armed carbon nanotube accounts for 0.5% of substrate quality.
The preparation method of the adulterated bismuth telluride-base thermoelectric material of above-mentioned nanophase is following:
Step 1: according to (Bi
0.92Se
0.08)
2Te
3/ 0.15wt.%TeI
4In stoichiometric ratio, take by weighing the block of high-purity matrix material tellurium, bismuth and antimony, account for 0.5% of substrate quality according to the quality of single armed carbon nanotube and take by weighing the single armed carbon nanotube powder;
Step 2: the single armed carbon nanotube powder is placed the silica tube bottom, put into matrix material again, encapsulate with oxyhydrogen flame after the extracting vacuum;
Step 3: silica tube is vertically placed in waving melting furnace; An end that is equipped with the single armed carbon nanotube powder down; Slowly be heated to 900 ℃ with 3 ℃/minute temperature rise rates, matrix material is melted in the wetting entering attapulgite powder in back gradually, insulation is 1 hour in this state;
Step 4: waved fusion 2 hours, and took out silica tube then rapidly, place the quenching oil quenching;
Step 5: place zone melting furnace to carry out growing by zone melting the silica tube behind the quenching; District's melting temperatur is 600 ℃, and the melting zone width is 25 millimeters, and thermograde is 40 ℃/centimetre; The speed of growth is 25 millimeters/hour, obtains the carbon nano tube-doped bismuth telluride-base thermoelectric material of single armed;
Step 6: the bismuth telluride-base thermoelectric material body that the single armed that obtains is carbon nano tube-doped is pulverized to be placed on and is carried out discharge plasma sintering in the high-strength graphite, and sintering temperature is 520 ℃, and sintering time is 5 minutes, and sintering pressure is 100MPa.
The lattice thermal conductivity κ of the bismuth telluride-base thermoelectric material that the single armed that obtains is carbon nano tube-doped
LIn whole warm area scope, significantly reduce, the ZT value all is greatly improved in whole warm area scope, minimum lattice thermal conductivity κ
LBe 0.28Wm
-1K
-1, maximum ZT value is 1.35 (350K).
Claims (5)
1. the preparation method of the adulterated bismuth telluride-base thermoelectric material of nanophase is characterized in that: comprise the steps:
Step 1:, take by weighing the corresponding simple substance of an amount of tellurium, bismuth and alloying element as matrix material according to the stoichiometric ratio of bismuth telluride-base thermoelectric material; Quality according to the 1-dimention nano phase accounts for 0.01% to 5% of substrate quality, takes by weighing 1-dimention nano phase powder;
Step 2: 1-dimention nano phase powder is placed the silica tube bottom, put into matrix material again, then silica tube is vacuumized sealing;
Step 3: silica tube is vertically placed in waving melting furnace; An end that is equipped with the 1-dimention nano phase down; Slowly be heated to 630 ° of C～900 ° C with 2 ° of C/ minute～8 ° temperature rise rates of C/ minute; Make matrix material melt gradually the back wetting entering 1-dimention nano mutually in, in this state the insulation 1 hour～4 hours;
Step 4: treat that 1-dimention nano fully waved fusion 0.5 hour～5 hours mutually after fully soaking into, take out silica tube then rapidly, place quenchant to carry out quenching;
Step 5: place zone melting furnace to carry out growing by zone melting the silica tube behind the quenching; District's melting temperatur is 600 ° of C～900 ° C; The melting zone width is 10 millimeters～50 millimeters; Thermograde is 25 ° C/ centimetre～50 ° C/ centimetre, and the speed of growth is 20 millimeters/hour～30 millimeters/hour, obtains the mutually adulterated bismuth telluride-base thermoelectric material of 1-dimention nano.
2. the preparation method of the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase according to claim 1 is characterized in that: adopt oxyhydrogen flame, acetylene flame or argon plasma flame to carry out vacuum-sealing in the described step 2.
3. the preparation method of the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase according to claim 1 is characterized in that: the quenchant in the described step 4 is air, water, saturated brine, oil or liquid nitrogen.
4. the preparation method of the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase according to claim 1; It is characterized in that: the adulterated bismuth telluride-base thermoelectric material of nanophase that described step 5 is obtained directly or after pulverizing carries out pressure sintering; Described sintering pressure is that 20MPa～200MPa, sintering temperature are 350 ° of C～520 ° C, and sintering time is 5 minutes～120 minutes.
5. the preparation method of the adulterated bismuth telluride-base thermoelectric material of a kind of nanophase according to claim 4 is characterized in that: discharge plasma sintering or hot pressed sintering are adopted in described pressure sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010564073 CN101994155B (en) | 2010-11-18 | 2010-11-18 | Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010564073 CN101994155B (en) | 2010-11-18 | 2010-11-18 | Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101994155A CN101994155A (en) | 2011-03-30 |
| CN101994155B true CN101994155B (en) | 2012-12-26 |
Family
ID=43784890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010564073 Active CN101994155B (en) | 2010-11-18 | 2010-11-18 | Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101994155B (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472069B (en) * | 2011-12-19 | 2015-02-01 | Ind Tech Res Inst | Thermoelectric composite material |
| CN103436729B (en) * | 2013-09-02 | 2016-01-20 | 中国科学院宁波材料技术与工程研究所 | A kind of thermoelectric material and preparation method thereof |
| CN103540999B (en) * | 2013-10-18 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ternary (the Sb that a kind of composition is adjustable 1-xbi x) 2se 3the preparation method of nano wire |
| RU2579389C2 (en) * | 2014-03-05 | 2016-04-10 | Общество с ограниченной ответственностью "ТЕЛЛУР" | Production of thermoelectric materials based on bismuth and stibium tellurides |
| CN104831344A (en) * | 2015-04-29 | 2015-08-12 | 河南鸿昌电子有限公司 | Crystal pulling method of semiconductor crystal bar |
| CN105047809B (en) * | 2015-06-30 | 2018-06-05 | 中国科学院宁波材料技术与工程研究所 | SnSe base thermoelectricity materials and preparation method thereof |
| CN106571422B (en) * | 2016-11-09 | 2022-03-22 | 苏州科技大学 | Bismuth telluride-based N-type thermoelectric material and preparation method thereof |
| CN106744820B (en) * | 2016-12-26 | 2019-03-29 | 中国科学院金属研究所 | Laminated metal chalcogenide/carbon nano tube flexible composite film material of higher order structures and preparation |
| CN107359239B (en) * | 2017-06-07 | 2020-11-27 | 同济大学 | Zinc bismuth tellurium heterogeneous phase change nanowire material and preparation method and application thereof |
| CN108550689B (en) * | 2018-05-25 | 2021-10-22 | 北京石油化工学院 | Preparation method of N-type bismuth telluride-based thermoelectric material |
| CN109811302B (en) * | 2019-01-10 | 2020-11-10 | 成都中建材光电材料有限公司 | Preparation method of N-type bismuth telluride-based thermoelectric film |
| CN112289919A (en) * | 2020-10-30 | 2021-01-29 | 中国电子科技集团公司第十八研究所 | Preparation method of N-type bismuth telluride polycrystalline block thermoelectric material |
| CN112430093A (en) * | 2020-11-16 | 2021-03-02 | 先导薄膜材料（广东）有限公司 | Preparation method of bismuth antimony tellurium alloy target |
| CN115073176B (en) * | 2021-03-15 | 2023-04-18 | 中国科学院宁波材料技术与工程研究所 | Bismuth telluride-based thermoelectric material and preparation method thereof |
| CN113121235B (en) * | 2021-04-09 | 2022-04-12 | 哈尔滨工业大学 | Preparation method of thermoelectric power generation material |
| CN116813347A (en) * | 2023-05-22 | 2023-09-29 | 合肥睿力工业科技有限公司 | Bismuth telluride composite and preparation method and application thereof |
-
2010
- 2010-11-18 CN CN 201010564073 patent/CN101994155B/en active Active
Non-Patent Citations (4)
| Title |
|---|
| Allon I. Hochbaum等.Enhanced thermoelectric performance of rough silicon nanowires.《NATURE LETTERS》.2008,第451卷163-168. * |
| Arun Majumdar等.Thermoelectricity in Semiconductor Nanostructures.《MATERIALS SCIENCE》.2004,第303卷777-778. * |
| Bongyoung Yoo等.Electrodeposition of Thermoelectric Superlattice Nanowires.《ADVANCED MATERIALS》.2007,第19卷296-299. * |
| X. JI等.Solution-Chemical Syntheses of Nano-Structured Bi2Te3 and PbTe Thermoelectric Materials.《Journal of ELECTRONIC MATERIALS》.2007,第36卷(第7期),721-726. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101994155A (en) | 2011-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101994155B (en) | Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof | |
| Zhang et al. | Controlled growth of bismuth antimony telluride BixSb2− xTe3 nanoplatelets and their bulk thermoelectric nanocomposites | |
| Su et al. | Microstructure and thermoelectric properties of CoSb2. 75Ge0. 25− xTex prepared by rapid solidification | |
| Ghosh et al. | Enhanced figure of merit of cement composites with graphene and ZnO nanoinclusions for efficient energy harvesting in buildings | |
| US9130066B2 (en) | Power factor enhanced thermoelectric material and method of producing same | |
| US10177295B2 (en) | P-type high-performance thermoelectric material with reversible phase change, and preparation method therefor | |
| CN102024899B (en) | Nanoparticle composite bismuth telluride-based thermoelectric material and preparation method thereof | |
| US20180108449A1 (en) | Thermoelectric composite material and method for preparing thermoelectric composite material | |
| CN102031416B (en) | Composite material of skutterudite filling substrate and preparation method thereof | |
| Zhang et al. | Phase Segregation and Superior Thermoelectric Properties of Mg2Si1–x Sb x (0≤ x≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis | |
| Park et al. | High thermoelectric performance of Bi-Te alloy: defect engineering strategy | |
| CN102373348B (en) | P-type skutterudite material and preparation method thereof | |
| KR20110052225A (en) | Nanocomposite thermoelectric material, and thermoelectric device and thermoelectric module comprising same | |
| US10600947B2 (en) | Thermoelectric materials, and thermoelectric element and thermoelectric module comprising the same | |
| CN102443848B (en) | Method for improving thermoelectric properties of bismuth sulfide polycrystal | |
| Zheng et al. | Unraveling the critical role of melt-spinning atmosphere in enhancing the thermoelectric performance of p-type Bi0. 52Sb1. 48Te3 alloys | |
| CN108231991A (en) | A kind of p-type bismuth telluride-base thermoelectric material to generate electricity near room temperature solid-state refrigeration and waste heat | |
| KR20090026667A (en) | Sn-filled and te-doped skutterudite thermoelectric material and method for manufacturing the same | |
| US9461226B2 (en) | Thermoelectric material and method of preparing the same | |
| Zhou et al. | Recent progress of halide perovskites for thermoelectric application | |
| Xiao et al. | Enhanced thermoelectric and mechanical performance of polycrystalline p-type Bi0. 5Sb1. 5Te3 by a traditional physical metallurgical strategy | |
| CN103436729B (en) | A kind of thermoelectric material and preparation method thereof | |
| CN108886080A (en) | The manufacturing method of compound, thermo-electric converting material and compound | |
| Xu et al. | Synergistically Optimized Thermal Conductivity and Carrier Concentration in GeTe by Bi–Se Codoping | |
| CN105702847B (en) | A kind of method of raising BiTeSe base N-type semiconductor pyroelectric material performances |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |