CN101989461A - 半导体nrom存储装置 - Google Patents
半导体nrom存储装置 Download PDFInfo
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- CN101989461A CN101989461A CN2009100560182A CN200910056018A CN101989461A CN 101989461 A CN101989461 A CN 101989461A CN 2009100560182 A CN2009100560182 A CN 2009100560182A CN 200910056018 A CN200910056018 A CN 200910056018A CN 101989461 A CN101989461 A CN 101989461A
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200910056018.2A CN101989461B (zh) | 2009-08-06 | 2009-08-06 | 半导体nrom存储装置 |
Applications Claiming Priority (1)
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CN200910056018.2A CN101989461B (zh) | 2009-08-06 | 2009-08-06 | 半导体nrom存储装置 |
Publications (2)
Publication Number | Publication Date |
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CN101989461A true CN101989461A (zh) | 2011-03-23 |
CN101989461B CN101989461B (zh) | 2014-04-02 |
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CN200910056018.2A Expired - Fee Related CN101989461B (zh) | 2009-08-06 | 2009-08-06 | 半导体nrom存储装置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050117401A1 (en) * | 2002-01-18 | 2005-06-02 | Jian Chen | Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells |
CN1855304A (zh) * | 2005-04-27 | 2006-11-01 | 三星电子株式会社 | 支持虚拟页存储的非易失性存储器件及其编程方法 |
CN101356587A (zh) * | 2005-09-09 | 2009-01-28 | 桑迪士克股份有限公司 | 用于对具有减少的编程干扰的nand类型的非易失性存储器进行编程的以末为先模式 |
CN101385089A (zh) * | 2005-12-29 | 2009-03-11 | 桑迪士克股份有限公司 | 用于非易失性存储器的基于行的交替读写 |
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2009
- 2009-08-06 CN CN200910056018.2A patent/CN101989461B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050117401A1 (en) * | 2002-01-18 | 2005-06-02 | Jian Chen | Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells |
CN1855304A (zh) * | 2005-04-27 | 2006-11-01 | 三星电子株式会社 | 支持虚拟页存储的非易失性存储器件及其编程方法 |
CN101356587A (zh) * | 2005-09-09 | 2009-01-28 | 桑迪士克股份有限公司 | 用于对具有减少的编程干扰的nand类型的非易失性存储器进行编程的以末为先模式 |
CN101385089A (zh) * | 2005-12-29 | 2009-03-11 | 桑迪士克股份有限公司 | 用于非易失性存储器的基于行的交替读写 |
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Publication number | Publication date |
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CN101989461B (zh) | 2014-04-02 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121025 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121025 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140402 Termination date: 20200806 |
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CF01 | Termination of patent right due to non-payment of annual fee |