CN101987534A - Method for patterning panel - Google Patents
Method for patterning panel Download PDFInfo
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- CN101987534A CN101987534A CN2009101641219A CN200910164121A CN101987534A CN 101987534 A CN101987534 A CN 101987534A CN 2009101641219 A CN2009101641219 A CN 2009101641219A CN 200910164121 A CN200910164121 A CN 200910164121A CN 101987534 A CN101987534 A CN 101987534A
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- sheet material
- thin film
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- laser
- patterning
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Abstract
The invention provides a method for patterning a panel, comprising the following steps: firstly, forming a silicon film on the panel; then, using laser to act on the silicon film to bond the silicon film area acted by the laser with an area corresponding to the panel so as to form a pattern; and finally, removing the area of the silicon film which is not acted by the laser to prepare the panel with a preset pattern. The invention discloses a new method for patterning the panel. By forming the silicon film on the panel firstly and using the laser to act on the silicon film to be bonded with the panel, the problem that the surface of the panel breaks because the laser is directly acted on the panel can be avoided, and the formed patterns are not easy to drop from the panel owing to homogeneity bonding of silicon and the panel.
Description
Technical field
The present invention relates to a kind of method of sheet material patterning, particularly relate to a kind of with the method for laser mode with the sheet material patterning.
Background technology
In the technology of LCD (LCD) or thin-film solar cells (TFPV), can on glass substrate, mark pattern, numeral or bar code, in order to auxiliary tube control products and technology, industry directly forms pattern, numeral or the bar code of desire mark on glass substrate in the laser engraving mode at present.
Engraving and surface engraving were two kinds in the laser engraving mode was divided into, engraving refers to utilize infrared light laser (wavelength 1064nm), green laser (wavelength 532nm) or ultraviolet laser short wavelengths' such as (wavelength 355nm) laser in so-called, focus on glass substrate inside, borrow the high-energy heating to produce gas explosion and form pattern; And surface engraving then refers to utilize the laser that can be absorbed by glass baseplate surface, as carbon dioxide laser (wavelength 10640nm), focuses on glass baseplate surface, and then the heating that releases energy forms pattern with local melting or vaporization glass baseplate surface.
But, no matter be engraving or surface engraving in carrying out in the laser engraving mode, though can reach the purpose that on glass substrate, marks pattern, numeral or bar code, yet, necessary comparatively high infrared light laser, green laser and the ultraviolet laser of use cost of interior engraving; Though and surface engraving is used is lower-cost carbon dioxide laser, glass substrate can not only have a strong impact on the effect of engraving because of the phenomenon that bursts of being heated and occurring scattering and spreading around carving area, more can be therefore and the structural strength of destruction glass substrate.
Therefore, how to design new method with low-cost, do not destroy structural strength ground patterned substrate, still have and treat that industry absorbs all the useful ideas.
Summary of the invention
Therefore, purpose of the present invention, promptly provide a kind of can be low-cost and do not destroy the method for the sheet material patterning of plate construction intensity.
So the method for sheet material patterning of the present invention comprises following three steps.
At first on sheet material, form the silicon thin film that one deck mainly is made of silicon.
Then the zone that at this silicon thin film this silicon thin film is arrived by laser action with laser action combines with this sheet material corresponding region and forms pattern.
Remove the zone of this silicon thin film, make a sheet material with predetermined pattern without laser action.
Beneficial effect of the present invention is: the method for developing a kind of new sheet material patterning, by on sheet material, forming silicon thin film, and make in the patterning process, laser action makes silicon thin film subregion and sheet material melt knot and patterning sheet material at silicon thin film, avoid laser to act directly on sheet material and make plate surface cracked, and to tie in the structure of sheet material be that homogeneity is in conjunction with the pattern difficult drop-off that makes formation because of silicon thin film melts.
Description of drawings
Fig. 1 is a flow chart, and first preferred embodiment of the method for sheet material patterning of the present invention is described;
Fig. 2 is a schematic side view, first preferred embodiment of the method for aid illustration sheet material patterning of the present invention, with the silicon solution spraying on sheet material;
Fig. 3 is a schematic side view, and first preferred embodiment of the method for aid illustration sheet material patterning of the present invention and second preferred embodiment form silicon thin film on sheet material;
Fig. 4 is a schematic side view, first preferred embodiment of the method for aid illustration sheet material patterning of the present invention and second preferred embodiment, with laser action at silicon thin film;
Fig. 5 is a partial enlarged drawing, first preferred embodiment of the method for aid illustration sheet material patterning of the present invention and second preferred embodiment, and silicon thin film forms silicon grain through the laser action zone and combines with the sheet material corresponding region, forms pattern;
Fig. 6 is a schematic side view, and first preferred embodiment of the method for aid illustration sheet material patterning of the present invention and second preferred embodiment remove the zone of silicon thin film without laser action, make the sheet material with predetermined pattern; And
Fig. 7 is a flow chart, and second preferred embodiment of the method for sheet material patterning of the present invention is described.
The specific embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
Consult Fig. 1, first preferred embodiment of the method for sheet material patterning of the present invention comprises following three steps.
Cooperate and consult Fig. 2, Fig. 3, at first carry out step 11, the silica flour that with the particle diameter yardstick is nano-scale earlier becomes silicon solution 201 with solvent, with nozzle this composite silicon solution 201 is sprayed on the sheet material 21 that principal component is a silicon, as shown in Figure 2 again, and behind the process drying program, solvent is evaporated or volatilization, form the silicon thin film 22 that mainly constitutes on this sheet material 21 and make by silicon, as shown in Figure 3, wherein, the component ratio that nano silica fume accounts for this silicon solution 201 is not less than 10%, and all the other components then are solvent.
What this will further specify be, in the present embodiment, this solvent is dispersant and water, utilizes dispersant that nano silica fume is dispersed in the solution, constitutes uniform silicon thin film 22 when making silicon solution 201 on being sprayed on sheet material.
Cooperate and consult Fig. 4, Fig. 5, then carry out step 12, with laser 23 focussing forces at this silicon thin film 22, the zone that this silicon thin film 22 of heating that gives off energy is simultaneously affacted by laser 23, as shown in Figure 4, and when heat is enough this silicon thin film 22 of instant melting by the zone that laser 23 affacts, make this silicon thin film 22 by laser action to the zone form small black silicon particle 241 and melt knot and form pattern 24 with these sheet material 21 corresponding regions, as shown in Figure 5.
Cooperate and consult Fig. 6, carry out step 13 at last, remove this silicon thin film 22 without laser 23 zones of action, make a sheet material 2 with predetermined pattern in the wet-cleaned mode.
What this will specify be, in the present embodiment, formed these silicon thin film 22 thickness of this step 11 are between between the 0.05mm to 0.5mm, make in the technology of this step 12 with laser 23 effects, avoid this silicon thin film 22 because of thickness too thick can't be fully and this sheet material 21 melt knot, and make this pattern 24 easily on this sheet material 21, peel off; Or make this silicon thin film 22 because of these silicon thin film 22 thickness are too thin formed this pattern 24 is not obvious through laser 23 zones of action and be difficult for identification.
Consult Fig. 7, second preferred embodiment of the method for sheet material patterning of the present invention comprises following three steps.
Cooperate and consult Fig. 3, at first carry out step 31, the silica flour that with the particle diameter yardstick is nano-scale earlier mixes this silicon thin film 22 of back making with gel, again this silicon thin film 22 is pasted on this sheet material 21, form the silicon thin film 22 that one deck mainly is made of silicon on this sheet material 21 and make, wherein, when nano silica fume mixed with gel, the shared component ratio of nano silica fume was not less than 10%.In the present embodiment, this gel is an Arabic gum.
What this will specify be, at the employed silicon thin film 22 of present embodiment also can be the silicon thin film 22 that directly uses ready-made supply, yet, no matter self manufacture or ready-made providing are provided this silicon thin film 22, the thickness of this silicon thin film 22 needs between between the 0.05mm to 0.5mm, and can avoid as the described problem of above-mentioned first preferred embodiment.
Cooperate and consult Fig. 4, Fig. 5, then carry out step 32, with the laser focussing force at this silicon thin film 22, the zone that this silicon thin film 22 of heating that gives off energy is simultaneously affacted by laser 23, as shown in Figure 4, and this silicon thin film 22 of instant melting is by the zone that laser 23 affacts when heat is enough, and the zone that this silicon thin film 22 is affacted by laser 23 forms small black silicon particle 241 and melts knot with these sheet material 21 corresponding regions, and then form pattern 24, as shown in Figure 5.
Cooperate and consult Fig. 6, carry out step 33 at last, directly remove this silicon thin film 22, make sheet material 2 with predetermined pattern without laser 23 zones of action.
What this will specify be, the method of sheet material patterning of the present invention mainly is to utilize laser 23 to act on to be formed on principal component to be the silicon thin film 22 on the sheet material 21 of silicon, and make the silicon in the silicon thin film 22 combine and then form predetermined pattern 24 with the silicon homogeneity of sheet material 21, therefore, in practical application, applicable to same be the glass substrate of main composition element with silicon, or be used for Silicon Wafer.Owing to the sheet material application that with silicon is main composition is very extensive, so no longer add to give unnecessary details at this.
In addition, the method of sheet material patterning of the present invention is that laser 23 is acted on the silicon thin film 22, no matter therefore be to use expensive infrared light laser, green laser, ultraviolet laser, or use cheap carbon dioxide laser, neither meeting destroys sheet material 21 surfaces and produces cracked problem, yet under the considering with regard to manufacturing cost, can use the carbon dioxide laser of relative low price, can reach predetermined effect equally.
In sum, the present invention mainly is the manufacture method of a kind of new sheet material patterning of exploitation, form silicon thin film 22 or directly paste on sheet material 21 by being sprayed on silicon solution 201 on the sheet material 21 that principal component is a silicon with silicon thin film 22, make when sheet material 21 carried out patterning, focus on the silicon thin film 22 with carbon dioxide laser 23, the zone that utilizes laser 23 high-octane heat energy instant melting silicon thin films 22 to be affacted by laser 23, the zone that silicon thin film 22 is affacted by laser 23 forms small black silicon particle 241 and knot is melted in the zone corresponding with sheet material 21, and then formation pattern 24, so, not only can deepen the contrast of pattern 24 and former sheet material 21 colors, also because laser 23 be act on silicon thin film 22 but not act directly on sheet material 21 and can avoid sheet material 21 surfaces because of heating produces cracked phenomenon, and the silicon grain 241 that is formed by silicon thin film 22 fusions and principal component are that the sheet material 21 of silicon combines for homogeneity, and can avoid subsequent technique Yin Gaowen or external force scratch and the pattern 24 of formation is broken away from sheet material 21, in addition, also because the present invention is the surface engraving technology, only need use the comparatively cheap carbon dioxide laser of price and can reduce cost, really improve the method for existing sheet material patterning with the short wavelength infrared ray laser, green laser or ultraviolet laser carry out interior engraving and need higher cost, or directly act on sheet material with carbon dioxide laser and make plate surface produce cracked shortcoming, reach goal of the invention of the present invention.
Claims (12)
1. the method for a sheet material patterning is characterized in that:
Described method comprises:
(a) on the sheet material that a principal component is a silicon, form the silicon thin film that one deck mainly is made of silicon;
(b) zone that at described silicon thin film described silicon thin film is arrived by laser action with laser action combines with described sheet material corresponding region and forms pattern; And
(c) remove the zone of described silicon thin film, make a sheet material with predetermined pattern without laser action.
2. the method for sheet material patterning as claimed in claim 1 is characterized in that:
Described step (a) is earlier to be that the silica flour of nano-scale becomes silicon solution to be coated in described sheet material with solvent with the particle diameter yardstick, removes behind the solvent and forms described silicon thin film.
3. the method for sheet material patterning as claimed in claim 2 is characterized in that:
The component ratio that the employed nano silica fume of described step (a) accounts for described silicon solution is not less than 10%.
4. the method for sheet material patterning as claimed in claim 3 is characterized in that:
The employed solvent of described step (a) is selected from dispersant and water.
5. the method for sheet material patterning as claimed in claim 4 is characterized in that:
Described step (c) is to remove described silicon thin film without the laser action zone in the wet-cleaned mode.
6. the method for sheet material patterning as claimed in claim 1 is characterized in that:
Described step (a) is earlier to be that the silica flour of nano-scale mixes the described silicon thin film of making afterwards with gel with the particle diameter yardstick, more described silicon thin film is pasted on this sheet material.
7. the method for sheet material patterning as claimed in claim 6 is characterized in that:
When in the described step (a) nano silica fume being mixed with gel, the shared component ratio of nano silica fume is not less than 10%.
8. the method for sheet material patterning as claimed in claim 7 is characterized in that:
The employed gel of described step (a) is an Arabic gum.
9. the method for sheet material patterning as claimed in claim 8 is characterized in that:
Described step (c) is directly to remove described silicon thin film without the laser action zone.
10. the method for sheet material patterning as claimed in claim 1 is characterized in that:
Formed silicon thin film thickness is between between the 0.05mm to 0.5mm in the described step (a).
11. the method for sheet material patterning as claimed in claim 1 is characterized in that:
The employed laser of described step (b) is carbon dioxide laser.
12. the method for sheet material patterning as claimed in claim 1 is characterized in that:
The employed sheet material of described step (a) is selected from glass or Silicon Wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101641219A CN101987534A (en) | 2009-08-06 | 2009-08-06 | Method for patterning panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101641219A CN101987534A (en) | 2009-08-06 | 2009-08-06 | Method for patterning panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101987534A true CN101987534A (en) | 2011-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101641219A Pending CN101987534A (en) | 2009-08-06 | 2009-08-06 | Method for patterning panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109649063A (en) * | 2018-11-07 | 2019-04-19 | 维达力实业(深圳)有限公司 | The production method of electronic product and its cover sheet and cover sheet |
| CN114851762A (en) * | 2021-06-19 | 2022-08-05 | 北京劲吾新能源科技有限公司 | Color photovoltaic module with three-dimensional effect and preparation method thereof |
-
2009
- 2009-08-06 CN CN2009101641219A patent/CN101987534A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109649063A (en) * | 2018-11-07 | 2019-04-19 | 维达力实业(深圳)有限公司 | The production method of electronic product and its cover sheet and cover sheet |
| CN114851762A (en) * | 2021-06-19 | 2022-08-05 | 北京劲吾新能源科技有限公司 | Color photovoltaic module with three-dimensional effect and preparation method thereof |
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Application publication date: 20110323 |