CN101980380A - Front tin oxide electrode-based thin film silicon cell and preparation method thereof - Google Patents

Front tin oxide electrode-based thin film silicon cell and preparation method thereof Download PDF

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CN101980380A
CN101980380A CN2010102961096A CN201010296109A CN101980380A CN 101980380 A CN101980380 A CN 101980380A CN 2010102961096 A CN2010102961096 A CN 2010102961096A CN 201010296109 A CN201010296109 A CN 201010296109A CN 101980380 A CN101980380 A CN 101980380A
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deposition
type layer
tin oxide
flow
silicon thin
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CN101980380B (en
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胡安红
李媛
吴兴坤
曹松峰
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AMPLESUN POWER HOLDINGS Co Ltd
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Abstract

The invention discloses a front tin oxide electrode-based thin film silicon cell. The cell is prepared by the following steps of: 1) preheating a tin oxide substrate to 200 to 230 DEG C; 2) sequentially depositing to prepare a first P-type layer and a second P-type layer on the heated substrate in the step 1) by using plasma chemical vapor deposition coating equipment by a two-step deposition method, wherein the first P-type layer is deposited without hydrogen, and the second P-type layer is deposited with hydrogen; and 3) sequentially depositing a buffer layer, an intrinsic layer, an N-type layer and a back electrode on the prepared second P-type layer to prepare the thin film silicon cell. The front tin oxide electrode-based thin film silicon cell prepared by the method can improve the light transmissivity of the tin oxide thin film, so that the power of the thin film silicon cell is further increased.

Description

Based on the silicon thin-film battery of electrode before the tin oxide and preparation method thereof
Technical field
The present invention relates to a kind of silicon thin-film battery based on electrode before the tin oxide and preparation method thereof.
Background technology
Silicon thin film (comprising amorphous silicon, microcrystal silicon and Nano thin film) solar cell has become the important component part of photovoltaic generation as a kind of low cost, green regenerative energy sources.At present in the production process mainly with the fin oxide condutire clear glass as preceding electrode, using plasma strengthens chemical vapour deposition technique, and deposition 10nm p (a-SiC:H)/10nm b (a-SiC:H)/300nm i (Si)/20nm n (Si) prepares silicon thin-film battery on 250 ℃ substrate.In plasma-deposited process, it is found that existing employing H 2Dilute Si H 4Deposition p (a-SiC:H) can reduce the internal flaw of P type layer and improve the conduction transmittability of P type layer, but dilutes the H of usefulness 2The plasma that forms in reaction can reduce the SnO 2 thin film above the glass substrate, make transparent SnO 2 thin film become the metallic tin film of light transmission difference, thereby reduce the transmitance (mainly be the transmitance of wavelength of light light 300-1000nm between) of sunlight in the tin oxide rete, influence the collection efficiency of silicon thin-film battery to light, directly be reflected at the reduction of hull cell short circuit current (Isc), be further embodied in the reduction of silicon thin-film battery power.So, perhaps in hydrogen plasma, how to protect the research of SnO 2 thin film to occur in succession for how improving the weatherability of SnO 2 thin film in hydrogen plasma.
The silicon thin-film battery price is about 1.5 Euros/W in the market, and therefore, for having the tens hull cell producers to hundreds of megawatt production line at present, the raising of the power of battery has the basis of great commercial value or even Business survival undoubtedly.
In the scheme of more existing improvement; be to adopt before the plasma deposited silicon film; the zinc-oxide film or the thin film of titanium oxide of several nanometer thickness of first sputter last layer on SnO 2 thin film; allow hydrogen plasma weather resistance good zinc-oxide film or thin film of titanium oxide are covered the relatively poor SnO 2 thin film of hydrogen plasma weatherability, thereby play the effect that the protection SnO 2 thin film is not reduced by hydrogen atom.Spatter this protective layer by plating, can obviously improve the transmitance of SnO 2 thin film, increase the short circuit current of hull cell, thereby further increase the power of silicon thin-film battery light.But this modification method for the existing production line of film enterprise, needs to change production procedure, makes production process become complicated, and equipment is spattered in the plating that needs simultaneously to introduce extra zinc oxide or thin film of titanium oxide, causes the increase of cost.
Summary of the invention
For improving the transmitance of SnO 2 thin film to light, thereby further increase the power of silicon thin-film battery, the object of the present invention is to provide a kind of silicon thin-film battery based on electrode before the tin oxide and preparation method thereof, silicon thin-film battery of the present invention is not change prior production process and do not introducing under the situation of extra production equipment, by existing technology adjustment is made.
For this reason, the present invention adopts following technical scheme:
A kind of silicon thin-film battery preparation method based on electrode before the tin oxide comprises the steps:
1) the tin oxide substrate is preheated the 200-230 degree;
2) using plasma chemical vapour deposition (CVD) filming equipment on the substrate after the step 1) heating, adopts two step sedimentations, and deposition makes a P type layer and the 2nd P type layer successively, and a described P type layer adopts no hydrogen deposition, and the 2nd P type layer adopts the hydrogen deposition;
3) in step 2) on the 2nd P type layer that makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery.
In above-mentioned steps 2) first step deposition step in, a described P type layer is by feeding the SiH of 300-350sccm 4, 260-300sccm B 2H 6, 500-540sccm CH 4, make by the deposition power deposition of 0.2-0.3kW.Preferably, in this first step deposition step, the flow that feeds gas is the SiH of 300-320sccm 4, 260-280sccm B 2H 6, 500-540sccm CH 4, make by the deposition power deposition of 0.2-0.3kW.
In above-mentioned steps 2) the second step deposition step in, described the 2nd P type layer is by feeding the H of 1.5-3.0slm 2, 300-360sccm SiH 4, 320-360sccm B 2H 6, 540-560sccm CH 4, make by the deposition power deposition of 0.25-0.3kW.Preferably, the flow of feeding gas is in this second step deposition step: the H of 2.0slm 2, 300sccm SiH 4, 320sccm B 2H 6, 540sccm CH 4, make by the deposition power deposition of 0.3kW.
Preferably, a described P type layer is 5-6nm, and the 2nd P type layer is 9-13nm.
Preferably, the pre-heating temperature of described tin oxide substrate is the 200-230 degree.
The present invention also aims to propose a kind of silicon thin-film battery based on electrode before the tin oxide, it comprises the tin oxide substrate and is deposited on P type layer on the tin oxide substrate, described P type layer is made of a P type layer and the 2nd P type layer, a described P type layer and the 2nd P type layer are that deposition makes preheating on the tin oxide substrate of 200-230 degree successively, a described P type layer adopts no hydrogen deposition, and the 2nd P type layer adopts the hydrogen deposition.
The present invention is not changing prior production process and is not introducing under the situation of extra production equipment, silicon P type layer depositing operation adjusted, being comprised: to the adjustment of substrate initial heating temperature, the adjustment of deposition step and the adjustment of reaction gas flow and deposition power.Described substrate initial temperature is adjusted, and is meant substrate is entered before the P type layer reaction chamber, adjusts the heating-up temperature of substrate in preheating cavity, and the substrate heating-up temperature is adjusted into 200-250 ℃ by 250 ℃.The adjustment of the deposition step among the present invention is with an original step sedimentation, changes two step sedimentations into, when being first step deposition, adopt the P1 type layer about no hydrogen dilution deposition one deck 5-6nm, during second deposition, adopt the P2 type layer of normal diluted in hydrogen deposition 9-13nm.
Compare with background technology, the present invention has following beneficial effect: by reducing the initial temperature of substrate deposition, can improve depositing of thin film speed, make the Si film surface of capping oxidation tin in the short period of time, reduce the reduction effect of H plasma the tin oxide surface; Adopt two step sedimentations; and in first step deposition P type layer process, adopt no hydrogen dilution, and be beneficial to equally and improve depositing of thin film speed, reduce the quantity of hydrogen plasma; thereby shortening tin oxide is exposed to the time in the hydrogen plasma, thereby plays the effect of protection SnO 2 thin film.
The silicon thin-film battery based on electrode before the tin oxide that adopts the present invention to make can be on original basis improves the power of silicon thin-film battery greatly, and the power maximum of silicon thin-film battery can improve 8W.
Description of drawings
Fig. 1 is the structural representation of a kind of silicon thin-film battery embodiment based on electrode before the tin oxide of obtaining according to the inventive method;
Fig. 2 is that not carry out the improved power of P type layer process be the I-V curve chart of 109W to the silicon thin-film battery based on electrode before the tin oxide of prior art;
Fig. 3 is that to carry out the improved power of P type layer process be the I-V curve chart of 115W to the silicon thin-film battery based on electrode before the tin oxide of an embodiment of the present invention;
Fig. 4 is that to carry out the improved power of P type layer process be the I-V curve chart of 116W to the silicon thin-film battery based on electrode before the tin oxide of an embodiment of the present invention;
Fig. 5 is that to carry out the improved power of P type layer process be the I-V curve chart of 117W to the silicon thin-film battery based on electrode before the tin oxide of an embodiment of the present invention.
Embodiment
Further specify the present invention below in conjunction with drawings and Examples.
With reference to Fig. 1, the silicon thin-film battery based on electrode before the tin oxide of present embodiment, its layer of structure is followed successively by: glass substrate 1, at the SnO 2 thin film 2 that deposits on the glass substrate, at a P type layer 3 that adopts no hydrogen dilution deposition on the SnO 2 thin film 2, adopting the 2nd P type layer 4 that hydrogen dilution deposition is arranged on the P type layer 3, depositing successively on the 2nd P type layer 4 that Type B cushions 5, intrinsic layer 6, N type layer 7, metal back electrode layer 8, on metal back electrode layer 8, covering backboard 9.
Below reference examples 1 be to make operational instances based on the silicon thin-film battery of electrode before the tin oxide based on existing method, embodiment 1-15 is 15 operational instances based on the silicon thin-film battery of electrode before the tin oxide that prepare based on the inventive method.
Reference examples 1:
Step 1) is with the preheating under 250 ℃ temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds hydrogen flowing quantity 2slm, SiH on the substrate after the step 1) heating 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4Flow 540sccm presses the thick P type layer of 0.3kW deposition power deposition 10nm;
Step 3) is in step 2) on the P type layer film that makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.62A, power (Pmax) is 109W.
Fig. 2 is I-V curve chart 109W condition under based on the silicon thin-film battery of electrode before the tin oxide not carrying out the improved power of P type layer process for this reference examples 1.
Embodiment 1:
Step 1) is with the preheating under 230 ℃ temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds SiH on the substrate after the step 1) heating 4Flow 320sccm, B 2H 6Flow 280sccm, CH 4Flow 500sccm presses the thick P type layer of 0.3kW deposition power deposition 6nm;
Step 3) is in step 2) on the P1 film that makes, feed hydrogen flowing quantity 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4Flow 540sccm presses the 2nd thick P type layer of 0.3kW deposition power deposition 9nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.635, power (Pmax) is 115W, increased 15mA than the hull cell electric current that does not carry out process modification, power has improved 6W.
Fig. 3 is the I-V curve chart of 115W for the silicon thin-film battery based on electrode before the tin oxide of this embodiment 2 at the power that carries out after P type layer process improves.
Embodiment 2:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds SiH on the substrate after the step 1) heating 4Flow 320sccm, B 2H 6Flow 280sccm, CH 4Flow 500sccm presses the thick P type layer of 0.3kW deposition power deposition 6nm;
Step 3) is in step 2) on the P1 film that makes, feed hydrogen flowing quantity 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4Flow 540sccm presses the 2nd thick P type layer of 0.3kW deposition power deposition 9nm;
Step 4) deposits resilient coating, intrinsic layer, N type layer and back electrode successively on the P2 film that step 3) makes, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.64A, power (Pmax) is 116W, increases 20mA than the hull cell electric current that does not carry out process modification, and power has improved 7W.
Fig. 4 is the I-V curve chart of 116W for the silicon thin-film battery based on electrode before the tin oxide of this embodiment 3 at the power that carries out after P type layer process improves.
Embodiment 3:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.65A, power (Pmax) is 117W, increased 30mA than the hull cell electric current that does not carry out process modification, power has improved 8W.
Figure 5 shows that the hull cell power of optimised process point after the improvement of embodiment 4 correspondences is the I-V curve chart under the 117W condition.
Embodiment 4:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.2kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.657A, power (Pmax) is 116W, increased 37mA than the hull cell electric current that does not carry out process modification, power has improved 7W.
The rating formula of hull cell: Pmax=Isc*Voc*FF, Isc are short circuit current, and Voc is an open circuit voltage, and FF is the battery fill factor, curve factor.Pursuit simply improves Isc, may will reduce Voc or FF, and the power P max of battery is reduced, and therefore, is necessary to select a suitable technology to make each parameter all reach best.
Embodiment 5:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 350sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 6nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.66A, power (Pmax) is 115.6W, increased 40mA than the hull cell electric current that does not carry out process modification, power has improved 6.6W.
Embodiment 6:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 300sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) deposits resilient coating intrinsic layer, N type layer and back electrode successively on the P2 film that step 3) makes, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.65A, power (Pmax) is 115W, has increased 30mA than the hull cell electric current that does not carry out process modification, and power has improved 6W.
Embodiment 7:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 260sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.66A, power (Pmax) is 116W, increased 40mA than the hull cell electric current that does not carry out process modification, power has improved 7W.
Embodiment 8:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 260sccm, CH 4The thick P1 layer of flow 520sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.66A, power (Pmax) is 116W, increased 40mA than the hull cell electric current that does not carry out process modification, power has improved 7W.
Embodiment 9:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 3slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 9nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.635A, power (Pmax) is 115W, increased 15mA than the hull cell electric current that does not carry out process modification, power has improved 6W.
Embodiment 10:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 1slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 13nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.64A, power (Pmax) is 114W, increased 20mA than the hull cell electric current that does not carry out process modification, power has improved 5W.
Embodiment 11:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 360sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 12nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.63A, power (Pmax) is 115W, increased 10mA than the hull cell electric current that does not carry out process modification, power has improved 6W.
Embodiment 12:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 320sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.63A, power (Pmax) is 115.2W, increased 10mA than the hull cell electric current that does not carry out process modification, power has improved 6.2W.
Embodiment 13:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 560sccm deposition power 0.3kW deposition 10nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.64A, power (Pmax) is 116.4W, increased 20mA than the hull cell electric current that does not carry out process modification, power has improved 7.4W.
Embodiment 14:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 300sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.25kW deposition 9nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.63A, power (Pmax) is 115W, increased 10mA than the hull cell electric current that does not carry out process modification, power has improved 6W.
Embodiment 15:
Step 1) is set at 200 ℃ with the pre-heating temperature of tin oxide substrate;
Step 2) the plasma activated chemical vapour deposition filming equipment of employing 13.56MHZ feeds H on the substrate after the step 1) heating 2Flow 0sccm, SiH 4Flow 300sccm, B 2H 6Flow 280sccm, CH 4The thick P1 layer of flow 540sccm deposition power 0.28kW deposition 5nm;
Step 3) is in step 2) on the P1 film that makes, feed H 2Flow 2slm, SiH 4Flow 360sccm, B 2H 6Flow 360sccm, CH 4The thick P2 layer of flow 540sccm deposition power 0.3kW deposition 12nm;
Step 4) is on the P2 film that step 3) makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery, battery short circuit electric current (Isc) is 1.63A, power (Pmax) is 115W, increased 10mA than the hull cell electric current that does not carry out process modification, power has improved 6W.

Claims (10)

1. the silicon thin-film battery preparation method based on electrode before the tin oxide is characterized in that comprising the steps:
1) the tin oxide substrate is preheated the 200-230 degree;
2) using plasma chemical vapour deposition (CVD) filming equipment on the substrate after the step 1) heating, adopts two step sedimentations, and deposition makes a P type layer and the 2nd P type layer successively, and a described P type layer adopts no hydrogen deposition, and the 2nd P type layer adopts the hydrogen deposition;
3) in step 2) on the 2nd P type layer that makes, deposit resilient coating, intrinsic layer, N type layer and back electrode successively, make silicon thin-film battery.
2. the silicon thin-film battery preparation method based on electrode before the tin oxide according to claim 1 is characterized in that: in step 2) first step deposition step in, a described P type layer is by feeding the SiH of 300-350sccm 4, 260-300sccm B 2H 6, 500-540sccm CH 4, make by the deposition power deposition of 0.2-0.3kW.
3. the silicon thin-film battery preparation method based on electrode before the tin oxide according to claim 1 is characterized in that: in step 2) the second step deposition step in, described the 2nd P type layer is by feeding the H of 1-3.0slm 2, 300-360sccm SiH 4, 320-360sccm B 2H 6, 540-560sccm CH 4, make by the deposition power deposition of 0.25-0.3kW.
4. the silicon thin-film battery preparation method based on electrode before the tin oxide according to claim 2 is characterized in that in first step deposition step it being by feeding the SiH of 300-320sccm 4, 260-280sccm B 2H 6, 500-540sccm CH 4, make by the deposition power deposition of 0.2-0.3kW.
5. the silicon thin-film battery preparation method based on electrode before the tin oxide according to claim 3 is characterized in that the flow that feeds gas in the second step deposition step is: the H of 2.0slm 2, 300sccm SiH 4, 320sccm B 2H 6, 540sccm CH 4, make by the deposition power deposition of 0.3kW.
6. according to each described silicon thin-film battery preparation method based on electrode before the tin oxide of claim 1-5, it is characterized in that: a described P type layer is 5-6nm, and the 2nd P type layer is 9-13nm.
7. silicon thin-film battery based on electrode before the tin oxide, comprise the tin oxide substrate and be deposited on P type layer on the tin oxide substrate, it is characterized in that: described P type layer is made of a P type layer and the 2nd P type layer, a described P type layer and the 2nd P type layer are that deposition makes preheating on the tin oxide substrate of 200-230 degree successively, a described P type layer adopts no hydrogen deposition, and the 2nd P type layer adopts the hydrogen deposition.
8. the silicon thin-film battery based on electrode before the tin oxide according to claim 7 is characterized in that: a described P type layer is by feeding the SiH of 300-350sccm 4, 260-300sccm B 2H 6, 500-540sccm CH 4, make by the deposition power deposition of 0.2-0.3kW.
9. the silicon thin-film battery based on electrode before the tin oxide according to claim 7 is characterized in that: described the 2nd P type layer is by feeding the H of 1-3.0slm 2, 300-360sccm SiH 4, 320-360sccm B 2H 6, 540-560sccm CH 4, make by the deposition power deposition of 0.25-0.3kW.
10. according to each described silicon thin-film battery based on electrode before the tin oxide of claim 7-9, it is characterized in that: a described P type layer is 5-6nm, and the 2nd P type layer is 9-13nm.
CN2010102961096A 2010-09-29 2010-09-29 Front tin oxide electrode-based thin film silicon cell and preparation method thereof Expired - Fee Related CN101980380B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277766A (en) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd Photovoltaic element and manufacture thereof
CN101567400A (en) * 2008-04-10 2009-10-28 韩国铁钢株式会社 Thin film silicon solar cell and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277766A (en) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd Photovoltaic element and manufacture thereof
CN101567400A (en) * 2008-04-10 2009-10-28 韩国铁钢株式会社 Thin film silicon solar cell and manufacturing method thereof

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