CN101976656B - Preparation methods of thin film transistor array and liquid crystal display - Google Patents
Preparation methods of thin film transistor array and liquid crystal display Download PDFInfo
- Publication number
- CN101976656B CN101976656B CN 201010277101 CN201010277101A CN101976656B CN 101976656 B CN101976656 B CN 101976656B CN 201010277101 CN201010277101 CN 201010277101 CN 201010277101 A CN201010277101 A CN 201010277101A CN 101976656 B CN101976656 B CN 101976656B
- Authority
- CN
- China
- Prior art keywords
- protective layer
- silicon
- channel region
- tft
- preset thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The embodiment of the invention discloses preparation methods of a thin film transistor (TFT) array and a liquid crystal display. The preparation method of the TFT array comprises the following steps of: providing a substrate, wherein the substrate is provided with a channel region, and the channel region is coated with a protective layer; forming a conducting layer pattern on the substrate; removing a preset thickness of the protective layer on the channel region; and cleaning the TFT array subjected to the removal of the preset thickness of the protective layer. According to the embodiment of the invention, the preset thickness of the protective layer is removed, so that a part of conducting layer containing conducting particles can be removed, and the floating gate structure can be reduced. Thus, when a negative gate source voltage is applied to the TFT, the conducting particles accumulated on the interface between the protective layer and the channel region can be reduced, so that the leakage current of the TFT is effectively reduced.
Description
Technical field
The present invention relates to liquid crystal display manufacturing technology field, more particularly, relate to thin film field-effect triode array and liquid crystal display preparation method.
Background technology
Thin Film Transistor (TFT) (Thin Film Transistor, TFT) is the important devices of preparation Thin Film Transistor (TFT) liquid crystal display (TFT-LCD).The preparation flow of TFT-LCD mainly comprises tft array processing procedure, the vertical processing procedure of group and module group procedure.Wherein, the tft array processing procedure mainly is to form the TFT layer at glass substrate, obtains the TFT glass substrate, also is that the preparation of TFT is mainly finished in the array processing procedure.For back of the body channel-etch type TFT, its corresponding array processing procedure generally comprises:
Substrate is provided, and described substrate has channel region, is coated with protective layer on the described channel region;
Form conducting layer figure in described substrate.
When implementing the invention, the inventor finds: when substrate preparation conducting layer figure, inevitably have the conducting particles diffusion of partially conductive layer or be injected in the protective layer of channel region top.Above-mentioned conducting particles forms " floating boom " structure in protective layer, and then causes TFT when adding the gate source voltage of negative sense, and more conducting particles is assembled at its protective layer and channel interface place, and then causes leakage current (Ioff) to increase.
And if Ioff crosses the switching characteristic that senior general affects TFT, and and then cause TFT-LCD occur showing uneven, turn white, harass etc. and show the class defective.Therefore, just should be optimized from technique in the preparation, to reach the purpose that reduces Ioff.
Summary of the invention
In view of this, embodiment of the invention purpose is to provide thin film field-effect triode array and the liquid crystal display preparation method that can reduce leakage current.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of thin film field-effect triode tft array preparation method, being used for removing a part of silicon that contains conducting particles is protective layer, reduces floating gate structure, comprising:
Substrate is provided, and described substrate has channel region, and being coated with silicon on the described channel region is protective layer;
Form conducting layer figure in described substrate;
Be that protective layer anti-carves to remove preset thickness to the silicon on the described channel region, described anti-carving comprises dry etching and wet etching;
Be that the tft array of protective layer preset thickness is cleared up to removing silicon.
A kind of liquid crystal display preparation method, being used for removing a part of silicon that contains conducting particles is protective layer, reduces floating gate structure, comprises array processing procedure, the vertical processing procedure of group and module group procedure, described array processing procedure comprises:
Substrate is provided, and described substrate has channel region, and having silicon on the described channel region is protective layer;
Form conducting layer figure in described substrate;
Be that protective layer anti-carves to remove preset thickness to the silicon on the described channel region, described anti-carving comprises dry etching and wet etching;
Be that the tft array of protective layer preset thickness is cleared up to removing silicon.
Can find out; the embodiment of the invention is removed preset thickness with protective layer; thereby can remove the protective layer that a part contains conducting particles; reduce " floating boom " structure; TFT is when adding the gate source voltage of negative sense like this; the conducting particles that assemble at its protective layer and channel interface place will reduce, and then effectively reduce the leakage current of TFT.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The Weimer triode array processing flow figure that Fig. 1 provides for the embodiment of the invention;
Another flow chart of Weimer triode array processing procedure that Fig. 2 a provides for the embodiment of the invention;
The another flow chart of Weimer triode array processing procedure that Fig. 2 b provides for the embodiment of the invention;
The another flow chart of Weimer triode array processing procedure that Fig. 3 provides for the embodiment of the invention;
The another flow chart of Weimer triode array processing procedure that Fig. 4 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S101 that Fig. 5 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S102 that Fig. 6 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S103 that Fig. 7 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S104 that Fig. 8 provides for the embodiment of the invention;
The tft array plate structure schematic diagram behind flow process S105 that Fig. 9 provides for the embodiment of the invention.
Embodiment
For quote and know for the purpose of, the technical term that hereinafter uses, write a Chinese character in simplified form or abridge and be summarized as follows:
Ioff: leakage current;
Vds: voltage between source-drain electrode;
Vgs: grid voltage between source electrodes;
Ids: electric current between source-drain electrode;
TFT, Thin Film Transistor, Thin Film Transistor (TFT);
LCD, Liquid Crystal Display, liquid crystal display;
DRIVE IC, drive integrated circult;
HF: hydrogen fluoride;
BHF: buffered hydrofluoric acid;
Etching: etching is to remove selectively the technical process of material with chemistry or physical method.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
TFT-LCD is widely used in the fields such as notebook computer, personal digital assistant, mobile unit, portable terminal at present, it realizes that principle is to utilize TFT to control voltage between upper/lower electrode, thereby make the rotation of liquid crystal generation different angles, change the permeability of light.High-quality TFT-LCD require picture evenly, without harassing, if the Ioff of TFT is too high, will affect the switching characteristic of TFT, and and then cause TFT-LCD occur showing uneven, the demonstration class defective such as turn white, harass.Therefore, the leakage current that how effectively to reduce TFT becomes needs a major issue overcoming in the TFT-LCD manufacture process.
The preparation flow of traditional TFT-LCD mainly comprises tft array processing procedure, the vertical processing procedure of group and module group procedure.Tft array processing procedure wherein mainly is to form the TFT layer at glass substrate, obtains TFT glass substrate (or being called the tft array plate), also is that the preparation of TFT is mainly finished in the array processing procedure.For back of the body channel-etch type TFT, its corresponding array processing procedure mainly comprises:
Substrate is provided, and described substrate has channel region, is coated with protective layer on the described channel region;
Form conducting layer figure in described substrate.
Because in tradition preparation, inevitably have the conducting particles diffusion of partially conductive layer or be injected in the protective layer of channel region top.Above-mentioned conducting particles forms " floating boom " structure in protective layer, and then causes TFT when adding the gate source voltage of negative sense, and more conducting particles is assembled at its protective layer and channel interface place, and then causes leakage current (Ioff) to increase.
The embodiment of the invention has namely proposed the liquid crystal display preparation method for the deficiency that exists in the above-mentioned processing procedure, the method comprises at least: array processing procedure, the vertical processing procedure of group and module group procedure, wherein, the vertical processing procedure of group, mainly be the preparation of finishing liquid crystal panel, for example, can utilize first two TFT glass substrates and other components to be combined into the sky liquid crystal panel, then in this sky liquid crystal panel, pour into liquid crystal, and the processing such as after perfusion is finished, seal and obtain liquid crystal panel; As for module group procedure, then mainly be liquid crystal panel to be installed additional a series of controls or the power circuits such as DRIVE IC.Signal just can send smoothly after energising like this, with the image on the control LCD display.
Referring to Fig. 1, above-mentioned array processing procedure may further comprise the steps at least:
Step S1, provide substrate, described substrate has channel region, is coated with protective layer on the described channel region;
Step S2, form conducting layer figure in described substrate;
Step S3, the protective layer on the described channel region is removed preset thickness; Described preset thickness accounts for 0.1%～50% of former protective layer gross thickness, is about to former protective layer and removes 0.1%～50% thickness.
Step S4, the tft array of removing the protective layer preset thickness is cleared up.
" removal preset thickness " can have multiple implementation among the step S3, such as by modes such as etchings, polishing, only otherwise introducing new conducting particles gets final product.The following embodiment of the present invention will be described in detail.Accordingly, the cleaning among the step S4 can change according to the multiple implementation among the step S3, and those skilled in the art can arrange flexibly according to concrete needs, and therefore not to repeat here.
As seen; the embodiment of the invention is removed preset thickness with protective layer; thereby can remove the protective layer that a part contains conducting particles; reduce " floating boom " structure; TFT is when adding the gate source voltage of negative sense like this; the conducting particles that assemble at its protective layer and channel interface place will reduce, and then effectively reduce the leakage current of TFT.
Because the conducting layer figure that forms in the step 2 has various shape, therefore cover on the protective layer on the channel region and may be coated with conductive layer, may not be coated with conductive layer yet.The below will be described respectively:
When being coated with successively protective layer and conductive layer on the channel region of the substrate that provides, referring to Fig. 2 a, the specific implementation to the removal of the protective layer on channel region preset thickness of mentioning among the step S3 of above-described embodiment can be:
Conductive layer on S31, the removal channel region;
S32, the protective layer on the channel region is anti-carved (etching) to remove preset thickness.
And work as when only being coated with protective layer on the channel region of the substrate that provides (having removed in advance conductive layer on the channel region); in other embodiments of the invention; referring to Fig. 2 b, the specific implementation to the removal of the protective layer on channel region preset thickness of mentioning among the step S3 of above-described embodiment can be:
Step S32, the protective layer on the channel region is anti-carved (etching) to remove preset thickness.
Above-mentioned etching comprises again dry etching and wet etching.
In other embodiments of the invention, referring to Fig. 3, above-mentioned steps S32 specifically can be:
The suitable etching liquid of step S311, utilization and described protective layer material carries out corrosion treatment to described protective layer; the mode of corrosion treatment can comprise that spray is processed and immersion treatment at least a; certainly also available other existing processing modes are corroded above-mentioned protective layer, do not repeat them here.Wherein, choosing mainly of etching liquid decided according to protective layer material; be the protective layer (x, y represent the proportioning of element) of the silicon such as SiNx, SiOx or SiOxNy system for material; can select to contain and effectively be etched into the acid system that is divided into HF; such as hydrofluoric acid (HF) or buffered hydrofluoric acid (BHF) etc.; in BHF, except containing HF, also can comprise ammonium fluoride (NH4HF2) composition.Certainly, also can select other etching liquids that contain HF, can corrode the silicon based material as long as guarantee.In above-mentioned etching liquid, the mass percent concentration of HF (being the percentage that the quality of HF accounts for the etching liquid gross mass) scope is 0.1%～99%; And for the protective layer material of other classification, then can be according to corresponding etching principle selective etching liquid, to reach the effect of as far as possible only protective layer being carried out etching and can not cause to other layers corrosion.It will be appreciated by persons skilled in the art that etching liquid will carry out etching to its protective layer that touches, owing to be not coated with conductive layer on the protective layer on the channel region, so the protective layer on the channel region also will contact with etching liquid, and be corroded.
Corresponding with it, still see also Fig. 3, the specific implementation that the tft array to removing the protective layer preset thickness of mentioning among the step S4 is cleared up can be:
Step S41, the tft array after using cleaning agent to etching carry out clean; The specific implementation of clean can be that spray is processed or ultrasonic wave is processed, but also both in conjunction with or adopt other existing cleaning ways.Wherein, the cleaning agent difference of looking etching liquid can be selected deionized water, organic solvent etc.
Step S42, the tft array through clean is carried out drying and processing.
The below will with an example more specifically, describe in detail to the tft array processing procedure among the above-mentioned liquid crystal display preparation method.
Referring to Fig. 4-9, the tft array processing procedure in the present embodiment comprises:
Flow process S101, on glass substrate 1 sputtering metal membrane 2, form gate electrode and storage capacitance bottom electrode figure through photoetching; Can be referring to Fig. 5 through the underlying structure behind the flow process S101;
Flow process S102, by chemical gas-phase method successive sedimentation gate insulation layer 3, semiconductor layer 4 and ohmic contact layer 5, form active layer pattern through photoetching; Can be referring to Fig. 6 through the underlying structure behind the flow process S102;
Flow process S 103, sputtering source drain metal film 6 form the source-drain electrode metal layer image and form channel region through photoetching; Can be referring to Fig. 7 through the underlying structure behind the flow process S103;
Flow process S104, chemical vapour deposition (CVD) dielectric film protective layer 7(dielectric film protective layer 7 are the above-mentioned protective layer of mentioning), form contact hole graph through after the photoetching; Can be referring to Fig. 8 through the underlying structure behind the flow process S104;
Flow process S105, sputter transparent pixels electrode layer 8(are above-mentioned conductive layer), form pixel electrode and storage capacitance through photoetching; Tft array plate behind the process flow process S105 is referring to Fig. 9;
Flow process S106, the tft array plate of preparing through flow process S105 is carried out the high temperature anneal;
The suitable etching liquid of flow process S107, use and dielectric film protective layer 7 is to the tft array plate spray scheduled time, to realize that dielectric film protective layer 7 is removed preset thickness;
Because the material of dielectric film protective layer 7 is SiNx in the present embodiment, therefore select to contain the acid of HF etching composition, wherein, the mass percent concentration scope of HF is 0.1%～99%, best in quality percent concentration scope is 0.1%～10%.The above-mentioned scheduled time is according to the difference of HF mass percent concentration and difference, and its scope can be between 1 second～100 minutes, and is 0.1%～10% etching liquid for HF mass percent concentration scope, and its corresponding processing time is 1 second～5 minutes.One of ordinary skill in the art will appreciate that mass percent concentration is higher, its corresponding processing time is just shorter.In addition, also should consider etching temperature when etching, present embodiment selects to carry out at normal temperatures etching.When specific implementation, those of ordinary skills can set etching temperature according to the kind of choosing etching liquid and etch rate, and therefore not to repeat here.
Flow process S108, the tft array plate after using deionized water to etching clean, to remove its surperficial etching liquid.Adopted in the present embodiment two kinds of cleaning ways of spray and ultrasonic wave to tft array plate clean in addition;
Flow process S109, utilize heated air that the tft array plate after cleaning is carried out wind to drench, remain in cleaning agent (also being above-mentioned deionized water) on the tft array plate with removal.
Through after the above-mentioned flow processing, the leakage current of TFT reduces by two orders of magnitude approximately.In addition, work as Vds=10V, during Vgs=-5V, the magnitude of its Ids of sample that processes without flow process S107-S109 is 1 * 10
-12About, and the sample after flow process S107-S109 processes, under same voltage arranged, the order magnitude range of its Ids was 1 * 10
-14～1 * 10
-15
The tft array processing procedure that all embodiment of the present invention mention, i.e. tft array preparation method is also within protection scope of the present invention.
It should be noted that the protective layer subsequent treatment processing procedure among above all embodiment can be realized by manual operation.In addition, one of ordinary skill in the art will appreciate that all or part of flow process that realizes in above-described embodiment method, to come the relevant hardware of instruction to finish by computer program, described program can be stored in the computer read/write memory medium, described program can comprise the flow process such as the embodiment of above-mentioned each side method when carrying out.Wherein, described storage medium can be magnetic disc, CD, read-only store-memory body (Read-Only Memory, ROM) or store-memory body (Random Access Memory, RAM) etc. at random.Therefore, the mode that above-mentioned protective layer subsequent treatment processing procedure also can computer program is solidified or is loaded on the production equipment, thereby carries out automation mechanized operation.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can in the situation that does not break away from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a thin film field-effect triode tft array preparation method is characterized in that, being used for removing a part of silicon that contains conducting particles is protective layer, reduces floating gate structure, comprising:
Substrate is provided, and described substrate has channel region, and being coated with silicon on the described channel region is protective layer;
Form conducting layer figure in described substrate;
Be that protective layer anti-carves to remove preset thickness to the silicon on the described channel region, described anti-carving comprises dry etching and wet etching;
Be that the tft array of protective layer preset thickness is cleared up to removing silicon.
2. the method for claim 1 is characterized in that,
Described is that the specific implementation that protective layer anti-carves to remove preset thickness is to the silicon on the described channel region:
Utilizing with described silicon is that the suitable etching liquid of protective layer material is that protective layer carries out corrosion treatment to described silicon;
Described is that the specific implementation that the tft array of protective layer preset thickness is cleared up is to removing silicon:
Tft array after using cleaning agent to etching carries out clean;
Tft array through clean is carried out drying and processing.
3. method as claimed in claim 2 is characterized in that, described corrosion treatment comprise that spray is processed and immersion treatment at least a.
4. method as claimed in claim 3 is characterized in that, effectively being etched into of described etching liquid is divided into hydrogen fluoride HF.
5. method as claimed in claim 4 is characterized in that, the mass percent concentration scope of described HF is 0.1%～10%.
6. method as claimed in claim 4 is characterized in that, described is that the specific implementation that protective layer carries out corrosion treatment is to described silicon:
To the described protective layer corrosion scheduled time, the scope of the described scheduled time is 1 second～5 minutes.
7. method as claimed in claim 2 is characterized in that, described clean comprises that spray is processed and at least a in processing of ultrasonic wave, and described drying and processing comprises that infrared heating is processed, the heat baking is processed and gas wind drenches at least a in the processing.
8. such as each described method of claim 1-7, it is characterized in that it is 0.1%～50% of protective layer gross thickness that described preset thickness accounts for former silicon.
9. a liquid crystal display preparation method is characterized in that, being used for removing a part of silicon that contains conducting particles is protective layer, reduces floating gate structure, comprises array processing procedure, the vertical processing procedure of group and module group procedure, and described array processing procedure comprises:
Substrate is provided, and described substrate has channel region, and having silicon on the described channel region is protective layer;
Form conducting layer figure in described substrate;
Be that protective layer anti-carves to remove preset thickness to the silicon on the described channel region, described anti-carving comprises dry etching and wet etching;
Be that the tft array of protective layer preset thickness is cleared up to removing silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010277101 CN101976656B (en) | 2010-09-08 | 2010-09-08 | Preparation methods of thin film transistor array and liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010277101 CN101976656B (en) | 2010-09-08 | 2010-09-08 | Preparation methods of thin film transistor array and liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101976656A CN101976656A (en) | 2011-02-16 |
| CN101976656B true CN101976656B (en) | 2013-03-20 |
Family
ID=43576526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010277101 Active CN101976656B (en) | 2010-09-08 | 2010-09-08 | Preparation methods of thin film transistor array and liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101976656B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866466A (en) * | 2006-06-23 | 2006-11-22 | 河北工业大学 | Method for removing integrated circuit wafer surface contaminant by electromechanical process |
| CN101211930A (en) * | 2006-12-29 | 2008-07-02 | Lg.菲利浦Lcd株式会社 | Thin film transistor array substrate and method of manufacturing the same |
-
2010
- 2010-09-08 CN CN 201010277101 patent/CN101976656B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866466A (en) * | 2006-06-23 | 2006-11-22 | 河北工业大学 | Method for removing integrated circuit wafer surface contaminant by electromechanical process |
| CN101211930A (en) * | 2006-12-29 | 2008-07-02 | Lg.菲利浦Lcd株式会社 | Thin film transistor array substrate and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101976656A (en) | 2011-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102629577B (en) | TFT array substrate and manufacturing method thereof and display device | |
| CN1920664B (en) | Etching tape and method of fabricating array substrate for liquid crystal display using the same | |
| CN105529301B (en) | Manufacturing method, array substrate and the display device of array substrate | |
| CN104950541A (en) | BOA-type liquid crystal display panel and manufacturing method thereof | |
| CN103715094A (en) | Thin film thyristor and manufacturing method thereof, array substrate and manufacturing method thereof and display device | |
| CN102148196A (en) | TFT-LCD (thin film transistor-liquid crystal display) array substrate and manufacturing method therefor | |
| CN101957529A (en) | FFS (Fringe Field Switching) type TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacturing method thereof | |
| CN104538352A (en) | Array substrate, manufacturing method thereof and display device | |
| CN102593050B (en) | Method for manufacturing liquid crystal display panel array substrate | |
| CN105448824B (en) | Array substrate and preparation method thereof, display device | |
| GB2530223B (en) | Method for manufacturing thin-film transistor array substrate | |
| US20180069098A1 (en) | Oxide tft and method of forming the same | |
| CN104766859A (en) | Manufacturing method and structure of TFT substrate | |
| CN102637648B (en) | Thin-film-transistor liquid crystal display, array substrate and manufacturing method of array substrate | |
| CN102468243B (en) | TFT (Thin Film Transistor) array substrate, manufacturing method and liquid crystal display device | |
| CN105549278A (en) | Manufacturing method for IPS type TFT-LCD array substrate and IPS type TFT-LCD array substrate | |
| CN103715266A (en) | Oxide thin-film transistor, manufacturing method of array substrate and display device | |
| CN102779783A (en) | Pixel structure, as well as manufacturing method and display device thereof | |
| CN105742186A (en) | Thin film transistor, fabrication method thereof, array substrate, fabrication method of array substrate and display device | |
| CN102610564B (en) | Method for manufacturing TFT array substrate | |
| CN102637634B (en) | Array substrate, manufacturing method of array substrate and display device | |
| CN104505372A (en) | Manufacturing method of metal oxide thin film transistor array substrate | |
| CN104779203A (en) | Array substrate and manufacturing method thereof and display device | |
| CN107204377A (en) | A kind of preparation method of thin film transistor (TFT), array base palte and liquid crystal display panel | |
| CN102693938B (en) | Thin film transistor liquid crystal display, array substrate and manufacture method of array substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |