CN101976656A - Preparation methods of thin film transistor array and liquid crystal display - Google Patents
Preparation methods of thin film transistor array and liquid crystal display Download PDFInfo
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- CN101976656A CN101976656A CN 201010277101 CN201010277101A CN101976656A CN 101976656 A CN101976656 A CN 101976656A CN 201010277101 CN201010277101 CN 201010277101 CN 201010277101 A CN201010277101 A CN 201010277101A CN 101976656 A CN101976656 A CN 101976656A
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Abstract
The embodiment of the invention discloses preparation methods of a thin film transistor (TFT) array and a liquid crystal display. The preparation method of the TFT array comprises the following steps of: providing a substrate, wherein the substrate is provided with a channel region, and the channel region is coated with a protective layer; forming a conducting layer pattern on the substrate; removing a preset thickness of the protective layer on the channel region; and cleaning the TFT array subjected to the removal of the preset thickness of the protective layer. According to the embodiment of the invention, the preset thickness of the protective layer is removed, so that a part of conducting layer containing conducting particles can be removed, and the floating gate structure can be reduced. Thus, when a negative gate source voltage is applied to the TFT, the conducting particles accumulated on the interface between the protective layer and the channel region can be reduced, so that the leakage current of the TFT is effectively reduced.
Description
Technical field
The present invention relates to LCD manufacturing technology field, more particularly, relate to thin film field-effect triode array and LCD preparation method.
Background technology
(Thin Film Transistor TFT) is the important devices of preparation Thin Film Transistor (TFT) LCD (TFT-LCD) to Thin Film Transistor (TFT).The preparation flow of TFT-LCD mainly comprises tft array processing procedure, the upright processing procedure of group and module group procedure.Wherein, the tft array processing procedure mainly is to form the TFT layer on glass substrate, obtains the TFT glass substrate, also is that the preparation of TFT is mainly finished in the array processing procedure.For back of the body channel-etch type TFT, its corresponding array processing procedure generally comprises:
Substrate is provided, and described substrate has channel region, is coated with protective layer on the described channel region;
In described substrate, form conducting layer figure.
When implementing the invention, the inventor finds: in substrate during the preparation conducting layer figure, inevitably have the conducting particles diffusion of partially conductive layer or be injected in the protective layer of channel region top.Above-mentioned conducting particles forms " floating boom " structure in protective layer, and then causes TFT when adding the gate source voltage of negative sense, and more conducting particles is assembled at its protective layer and channel interface place, and then causes leakage current (Ioff) to increase.
And Ioff is if cross the switching characteristic that senior general influences TFT, and and then cause TFT-LCD occur showing uneven, turn white, harass etc. and show the class defective.Therefore, just should be optimized in the preparation, to reach the purpose that reduces Ioff from technology.
Summary of the invention
In view of this, embodiment of the invention purpose is to provide the thin film field-effect triode array and the LCD preparation method that can reduce leakage current.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of thin film field-effect triode tft array preparation method comprises:
Substrate is provided, and described substrate has channel region, is coated with protective layer on the described channel region;
In described substrate, form conducting layer figure;
Protective layer on the described channel region is removed preset thickness;
The tft array of removing the protective layer preset thickness is cleared up.
A kind of LCD preparation method comprises array processing procedure, the upright processing procedure of group and module group procedure, and described array processing procedure comprises:
Substrate is provided, and described substrate has channel region, has protective layer on the described channel region;
In described substrate, form conducting layer figure;
Protective layer on the described channel region is removed preset thickness;
The tft array of removing the protective layer preset thickness is cleared up.
As can be seen; the embodiment of the invention is removed preset thickness with protective layer; thereby can remove the protective layer that a part contains conducting particles; reduce " floating boom " structure; TFT is when adding the gate source voltage of negative sense like this; the conducting particles that assemble at its protective layer and channel interface place will reduce, and then reduce the leakage current of TFT effectively.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The Weimer triode array processing flow figure that Fig. 1 provides for the embodiment of the invention;
Another flow chart of Weimer triode array processing procedure that Fig. 2 a provides for the embodiment of the invention;
The another flow chart of Weimer triode array processing procedure that Fig. 2 b provides for the embodiment of the invention;
The another flow chart of Weimer triode array processing procedure that Fig. 3 provides for the embodiment of the invention;
The another flow chart of Weimer triode array processing procedure that Fig. 4 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S101 that Fig. 5 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S102 that Fig. 6 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S103 that Fig. 7 provides for the embodiment of the invention;
The underlying structure schematic diagram behind flow process S104 that Fig. 8 provides for the embodiment of the invention;
The tft array plate structure schematic diagram behind flow process S105 that Fig. 9 provides for the embodiment of the invention.
Embodiment
For quote and know for the purpose of, hereinafter the technical term of Shi Yonging, write a Chinese character in simplified form or abridge and be summarized as follows:
Ioff: leakage current;
Vds: voltage between source-drain electrode;
Vgs: grid voltage between source electrodes;
Ids: electric current between source-drain electrode;
TFT, Thin Film Transistor, Thin Film Transistor (TFT);
LCD, Liquid Crystal Display, LCD;
DRIVE IC, drive integrated circult;
HF: hydrogen fluoride;
BHF: buffered hydrofluoric acid;
Etching: etching is to remove the technical process of material selectively with chemistry or physical method.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
TFT-LCD is widely used in fields such as notebook computer, personal digital assistant, mobile unit, portable terminal at present, it realizes that principle is to utilize TFT to control voltage between upper/lower electrode, thereby make the rotation of liquid crystal generation different angles, change the permeability of light.High-quality TFT-LCD require picture evenly, do not have and harass, if the Ioff of TFT is too high, will influence the switching characteristic of TFT, and and then cause TFT-LCD occur showing uneven, demonstration class defective such as turn white, harass.Therefore, the leakage current that how effectively to reduce TFT becomes needs a major issue overcoming in the TFT-LCD manufacture process.
The preparation flow of traditional TFT-LCD mainly comprises tft array processing procedure, the upright processing procedure of group and module group procedure.Tft array processing procedure wherein mainly is to form the TFT layer on glass substrate, obtains TFT glass substrate (or being called the tft array plate), also is that the preparation of TFT is mainly finished in the array processing procedure.For back of the body channel-etch type TFT, its corresponding array processing procedure mainly comprises:
Substrate is provided, and described substrate has channel region, is coated with protective layer on the described channel region;
In described substrate, form conducting layer figure.
Because in traditional preparation process, inevitably have the conducting particles diffusion of partially conductive layer or be injected in the protective layer of channel region top.Above-mentioned conducting particles forms " floating boom " structure in protective layer, and then causes TFT when adding the gate source voltage of negative sense, and more conducting particles is assembled at its protective layer and channel interface place, and then causes leakage current (Ioff) to increase.
The embodiment of the invention has promptly proposed the LCD preparation method at the deficiency that exists in the above-mentioned processing procedure, this method comprises at least: array processing procedure, the upright processing procedure of group and module group procedure, wherein, the upright processing procedure of group, mainly be the preparation of finishing liquid crystal panel, for example, can utilize two TFT glass substrates and other components to be combined into the sky liquid crystal panel earlier, in this sky liquid crystal panel, pour into liquid crystal then, and processing such as after perfusion is finished, seal and obtain liquid crystal panel; As for module group procedure, then mainly be liquid crystal panel to be installed additional a series of controls or power circuits such as DRIVE IC.Signal just can send smoothly after energising like this, with the image on the control LCD display.
Referring to Fig. 1, above-mentioned array processing procedure may further comprise the steps at least:
Step S1, provide substrate, described substrate has channel region, is coated with protective layer on the described channel region;
Step S2, in described substrate, form conducting layer figure;
Step S3, the protective layer on the described channel region is removed preset thickness; Described preset thickness accounts for 0.1%～50% of former protective layer gross thickness, is about to former protective layer and removes 0.1%～50% thickness.
Step S4, the tft array of removing the protective layer preset thickness is cleared up.
" removal preset thickness " can have multiple implementation among the step S3, such as by modes such as etchings, polishing, only otherwise introducing new conducting particles gets final product.The following embodiment of the present invention will be described in detail.Accordingly, the cleaning among the step S4 can change according to the multiple implementation among the step S3, and those skilled in the art can be provided with flexibly according to concrete needs, do not give unnecessary details at this.
As seen; the embodiment of the invention is removed preset thickness with protective layer; thereby can remove the protective layer that a part contains conducting particles; reduce " floating boom " structure; TFT is when adding the gate source voltage of negative sense like this; the conducting particles that assemble at its protective layer and channel interface place will reduce, and then reduce the leakage current of TFT effectively.
Because the conducting layer figure that forms in the step 2 has multiple shape, therefore cover on the protective layer on the channel region and may be coated with conductive layer, may not be coated with conductive layer yet.To be described respectively below:
When being coated with protective layer and conductive layer successively on the channel region of the substrate that is provided, referring to Fig. 2 a, the specific implementation of mentioning among the step S3 of the foregoing description to the removal of the protective layer on channel region preset thickness can be:
Conductive layer on S31, the removal channel region;
S32, the protective layer on the channel region is anti-carved (etching) to remove preset thickness.
And work as when only being coated with protective layer on the channel region of the substrate that is provided (having removed conductive layer on the channel region in advance); in other embodiments of the invention; referring to Fig. 2 b, the specific implementation of mentioning among the step S3 of the foregoing description to the removal of the protective layer on channel region preset thickness can be:
Step S32, the protective layer on the channel region is anti-carved (etching) to remove preset thickness.
Above-mentioned etching comprises dry etching and wet etching again.
In other embodiments of the invention, referring to Fig. 3, above-mentioned steps S32 specifically can be:
The suitable etching liquid of step S311, utilization and described protective layer material carries out corrosion treatment to described protective layer; the mode of corrosion treatment can comprise that spray is handled and immersion treatment at least a; certainly also available other existing processing modes are corroded above-mentioned protective layer, do not repeat them here.Wherein, choosing mainly of etching liquid decided according to protective layer material; for material is the protective layer (x, y represent the proportioning of element) of silicon systems such as SiNx, SiOx or SiOxNy; can select for use to contain and effectively be etched into the acid system that is divided into HF; for example hydrofluoric acid (HF) or buffered hydrofluoric acid (BHF) etc.; in BHF, except containing HF, also can comprise ammonium fluoride (NH4HF2) composition.Certainly, also can select other etching liquids that contain HF for use, can corrode the silicon based material as long as guarantee.In above-mentioned etching liquid, the mass percent concentration of HF (being the percentage that the quality of HF accounts for the etching liquid gross mass) scope is 0.1%～99%; And for the protective layer material of other classification, then can be according to corresponding etching principle selective etching liquid, to reach the effect of as far as possible only protective layer being carried out etching and can not cause corrosion to other layers.It will be appreciated by persons skilled in the art that etching liquid will carry out etching to the protective layer that it touched, owing to be not coated with conductive layer on the protective layer on the channel region, so the protective layer on the channel region also will contact with etching liquid, and be corroded.
Corresponding with it, still see also Fig. 3, the specific implementation that the tft array of mentioning among the step S4 to removing the protective layer preset thickness is cleared up can be:
Step S41, the tft array after using cleaning agent to etching carry out clean; The specific implementation of clean can be spray and handles or ultrasonic Treatment, but also both in conjunction with or adopt other existing cleaning ways.Wherein, the cleaning agent difference of looking etching liquid can be selected deionized water, organic solvent etc.
Step S42, the tft array through clean is dried processing.
To the tft array processing procedure among the above-mentioned LCD preparation method be described in detail with an example more specifically below.
Referring to Fig. 4-9, the tft array processing procedure in the present embodiment comprises:
Flow process S101, on glass substrate 1 splash-proofing sputtering metal film 2, form gate electrode and storage capacitance bottom electrode figure through photoetching; Can be through the underlying structure behind the flow process S101 referring to Fig. 5;
Flow process S102, by chemical gas-phase method successive sedimentation gate insulation layer 3, semiconductor layer 4 and ohmic contact layer 5, form active layer pattern through photoetching; Can be through the underlying structure behind the flow process S102 referring to Fig. 6;
Flow process S103, sputtering source drain metal film 6 form the source-drain electrode metal layer image and form channel region through photoetching; Can be through the underlying structure behind the flow process S103 referring to Fig. 7;
Flow process S104, chemical vapour deposition (CVD) dielectric film protective layer 7 (dielectric film protective layer 7 is the above-mentioned protective layer of mentioning) form contact hole graph through after the photoetching; Can be through the underlying structure behind the flow process S104 referring to Fig. 8;
Flow process S105, sputter transparent pixels electrode layer 8 (being above-mentioned conductive layer) form pixel electrode and storage capacitance through photoetching; Tft array plate behind the process flow process S105 is referring to Fig. 9;
Flow process S106, the tft array plate of preparing through flow process S105 is carried out The high temperature anneal;
The suitable etching liquid of flow process S107, use and dielectric film protective layer 7 is to the tft array plate spray scheduled time, to realize that dielectric film protective layer 7 is removed preset thickness;
Because the material of dielectric film protective layer 7 is SiNx in the present embodiment, therefore select to contain the acid of HF etching composition, wherein, the mass percent concentration scope of HF is 0.1%～99%, best in quality percent concentration scope is 0.1%～10%.The above-mentioned scheduled time is according to the difference of HF mass percent concentration and difference, and its scope can be between 1 second～100 minutes, and is 0.1%～10% etching liquid for HF mass percent concentration scope, and its corresponding processing time is 1 second～5 minutes.One of ordinary skill in the art will appreciate that mass percent concentration is high more, its corresponding processing time is just short more.In addition, also should consider etching temperature when etching, present embodiment selects to carry out at normal temperatures etching.When specific implementation, those of ordinary skills can set etching temperature according to the kind of choosing etching liquid and etch rate, do not give unnecessary details at this.
Flow process S108, the tft array plate after using deionized water to etching clean, to remove its surperficial etching liquid.Adopted two kinds of cleaning ways of spray and ultrasonic wave to tft array plate clean in addition in the present embodiment;
Flow process S109, utilize heated air that the tft array plate after cleaning is carried out wind to drench, remain in cleaning agent (also being above-mentioned deionized water) on the tft array plate with removal.
Through after the above-mentioned flow processing, the leakage current of TFT reduces by two orders of magnitude approximately.In addition, work as Vds=10V, during Vgs=-5V, the magnitude of its Ids of sample that handles without flow process S107-S109 is 1 * 10
-12About, and the sample after flow process S107-S109 handles is provided with down at same voltage, the order magnitude range of its Ids is 1 * 10
-14～1 * 10
-15
The tft array processing procedure that all embodiment of the present invention mention, i.e. tft array preparation method is also within protection scope of the present invention.
It should be noted that the protective layer subsequent treatment processing procedure among above all embodiment can be realized by manual operation.In addition, one of ordinary skill in the art will appreciate that all or part of flow process that realizes in the foregoing description method, be to instruct relevant hardware to finish by computer program, described program can be stored in the computer read/write memory medium, described program can comprise the flow process as the embodiment of above-mentioned each side method when carrying out.Wherein, described storage medium can be magnetic disc, CD, read-only storage memory body (Read-Only Memory, ROM) or at random store memory body (Random Access Memory, RAM) etc.Therefore, the mode that above-mentioned protective layer subsequent treatment processing procedure also can computer program is solidified or is loaded on the production equipment, thereby carries out automation mechanized operation.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (10)
1. a thin film field-effect triode tft array preparation method is characterized in that, comprising:
Substrate is provided, and described substrate has channel region, is coated with protective layer on the described channel region;
In described substrate, form conducting layer figure;
Protective layer on the described channel region is removed preset thickness;
The tft array of removing the protective layer preset thickness is cleared up.
2. the method for claim 1 is characterized in that,
Described specific implementation to the removal of the protective layer on described channel region preset thickness is:
Protective layer on the described channel region is anti-carved to remove preset thickness.
3. method as claimed in claim 2 is characterized in that,
The described specific implementation that protective layer on the described channel region is anti-carved to remove preset thickness is:
The suitable etching liquid of utilization and described protective layer material carries out corrosion treatment to described protective layer;
The described specific implementation that the tft array of removing the protective layer preset thickness is cleared up is:
Tft array after using cleaning agent to etching carries out clean;
Tft array through clean is dried processing.
4. method as claimed in claim 3 is characterized in that, described corrosion treatment comprise that spray is handled and immersion treatment at least a.
5. method as claimed in claim 4 is characterized in that, when described protective layer is a silicon when being protective layer, effectively being etched into of described etching liquid is divided into hydrogen fluoride HF.
6. method as claimed in claim 5 is characterized in that, the mass percent concentration scope of described HF is 0.1%～10%.
7. method as claimed in claim 5 is characterized in that, the described specific implementation that described protective layer is carried out corrosion treatment is:
To the described protective layer corrosion scheduled time, the scope of the described scheduled time is 1 second～5 minutes.
8. method as claimed in claim 3 is characterized in that, described clean comprise that spray is handled and ultrasonic Treatment at least a, described oven dry is handled and is comprised that infrared heating is handled, the heat baking is handled and gas wind drenches at least a in the processing.
9. as each described method of claim 1-8, it is characterized in that described preset thickness accounts for 0.1%～50% of former protective layer gross thickness.
10. a LCD preparation method is characterized in that, comprises array processing procedure, the upright processing procedure of group and module group procedure, and described array processing procedure comprises:
Substrate is provided, and described substrate has channel region, has protective layer on the described channel region;
In described substrate, form conducting layer figure;
Protective layer on the described channel region is removed preset thickness;
The tft array of removing the protective layer preset thickness is cleared up.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866466A (en) * | 2006-06-23 | 2006-11-22 | 河北工业大学 | Method for removing integrated circuit wafer surface contaminant by electromechanical process |
| CN101211930A (en) * | 2006-12-29 | 2008-07-02 | Lg.菲利浦Lcd株式会社 | Thin film transistor array substrate and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866466A (en) * | 2006-06-23 | 2006-11-22 | 河北工业大学 | Method for removing integrated circuit wafer surface contaminant by electromechanical process |
| CN101211930A (en) * | 2006-12-29 | 2008-07-02 | Lg.菲利浦Lcd株式会社 | Thin film transistor array substrate and method of manufacturing the same |
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