CN101974770A - Aqueous solution for electrodepositing iridium layer and method for preparing iridium layer in aqueous solution by way of electrodeposition - Google Patents
Aqueous solution for electrodepositing iridium layer and method for preparing iridium layer in aqueous solution by way of electrodeposition Download PDFInfo
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Abstract
The invention discloses an aqueous solution for electrodepositing an iridium layer and a method for preparing an iridium layer in the aqueous solution by way of electrodeposition, which are characterized in that 100 ml of prepared aqueous solution of the invention comprises iridium compound the concentration of which is 0.3 to 8g/ml in iridium, 0.002 to 0.09 mol of stress reducer, 0.002 to 0.12 mol of conductive salt, and 0.002 to 0.06 mol of pH-value buffer. The method of the invention comprises the following steps: electrodepositing an iridium layer in the aqueous solution got 1.0 to 50h at a stirring speed of 60 to 1500r/min and a temperature of 70 to 90 DEG C, wherein the pH value of the aqueous solution is 2.0 to 5.0, and the cathode-current density is 0.01 to 4.0 A/dm2; taking out the obtained product and cleaning the obtained product with deionized water; and drying the obtained product for 5 to 30min at a temperature of 35 to 55 DEG C so as to obtain an iridium layer with the particle size of 0.1 to 1.5 mu m on the surface of a cathode plate. The prepared iridium layer has the advantages of smoothness, compactness, uniform particles, and no crack.
Description
Technical field
The present invention relates to a kind of prepared by electrodeposition iridium layer aqueous solutions employed, also relate to and in this aqueous solution, adopt the continuous current method to come prepared by electrodeposition iridium layer.
Background technology
Many high-temperature materials such as C/C, pottery and refractory metal such as molybdenum Mo, rhenium Re, tungsten W etc. need the pyritous body material because the fusing point height can be used as guided missile cruiser turbine engine, rocket chamber inwall, gas-turbine engine, thermoelectric generator, automotive industry and other, but these materials make their characteristic be difficult to bring into play because of the ultrahigh-temperature oxidation corrosion that can not bear more than 1500 ℃.In order under ultrahigh-temperature, can also to keep these properties of materials, must be in their surface preparation densifications can anti-ultrahigh-temperature oxide coating.The material of oxidation resistant coating mainly contains silicide, precious metal, Ni-Cr alloy etc.Precious metal iridium Ir enjoys favor with its a series of excellent properties as oxidation resistant coating.Iridium Ir is present unique refractory metal that satisfies high strength, high-melting-point and ultrahigh-temperature superior oxidation resistance simultaneously, therefore, the iridium layer can be used as the ultrahigh-temperature oxidation resistant coating of high-temperature material and refractory metal member under the extreme environment, and it has higher use temperature and longer work-ing life than conventional oxide covering.
At present, the method for obtaining the iridium layer mainly contains: galvanic deposit etc. in chemical vapour deposition, magnetron sputtering, plasma spraying method, two brightness plasma method, the high-temperature fusion salt system.Chemical vapour deposition prepares iridium layer required equipment costliness, cost height.Magnetically controlled sputter method can be prepared highly purified iridium coating layer, but sedimentation rate is slower, and is not suitable for being deposited on the complex-shaped parts.The iridium layer porosity that plasma spraying obtains is higher, can not use as supercoat, particularly under hyperthermal environments.Utilize two prepared iridium coating layers of brightness plasma method, because in preparation process, iridium coating layer suffers high-density ion bombardment, in the very high unrelieved stress of the inner generation of coating.There are problems such as service temperature is too high, energy consumption big, deep-etching in high-temperature molten salt prepared by electrodeposition iridium layer.
Summary of the invention
One of purpose of the present invention is to propose a kind of aqueous solution that adopts when prepared by electrodeposition iridium layer, and the concentration that contains iridic compound (in iridium) in the described aqueous solution of preparation 100ml is 0.3～8g, stress depressant 0.002～0.09mol, conducting salt 0.002～0.12mol, pH value buffer reagent 0.002～0.06mol.
Described iridic compound is water-soluble iridous chloride IrCl
3, iridic chloride IrCl
4, tribromide iridium IrBr
3, triiodide iridium IrI
3, the inferior iridium acid of chlordene sodium Na
3IrCl
6, the inferior iridium acid of chlordene potassium K
3IrCl
6, the inferior iridium acid of chlordene ammonium (NH
4)
3IrCl
6, the inferior iridium acid of hexabromo sodium Na
3IrBr
6, the inferior iridium acid of hexabromo potassium K
3IrBr
6, six sodium iridichloride Na
2IrCl
6, six potassium hexachloroiridate K
2IrCl
6With six ammonium iridichloride (NH
4)
2IrCl
6In a kind of.
Described stress depressant is asccharin, thionamic acid, thionamic acid sodium, thionamic acid potassium, 1,5-naphthene sulfonic acid, 1,3, a kind of in 6-naphthalene trisulfonic acid, the thiocarbamide.
Described conducting salt is a kind of in saltpetre, sodium sulfate, SODIUMNITRATE and the sodium-chlor.
Described pH value buffer reagent is a kind of in citric acid, ammonium citrate, Trisodium Citrate, Tripotassium Citrate, SODIUM PHOSPHATE, MONOBASIC, potassium primary phosphate, dipotassium hydrogen phosphate, the Sodium phosphate dibasic.
The scope of pH value of aqueous solution can be 2.0～5.0.
Another object of the present invention is to propose a kind of method that the method for employing continuous current is come prepared by electrodeposition iridium layer in the aqueous solution.The iridium layer that utilizes present method to prepare at aqueous solution electrodeposition has easy to operate, and the iridium layer is smooth, fine and close, uniform particles, does not have crackle, and is fit to be deposited on the first-class advantage of complex-shaped component.
A kind of method for preparing the iridium layer in the aqueous solution of galvanic deposit iridium layer of the present invention is under continuous current mode condition, and the step of carrying out prepared by electrodeposition iridium layer on negative electrode has:
(A) preparation cell liquid
At first a certain amount of stress depressant, conducting salt and pH value buffer reagent are dissolved in the deionized water successively, under heating, add a certain amount of iridic compound while stirring then, be settled to certain volume.Adjust pH value of aqueous solution with the NaOH solution of 2.0mol/L or the HCl solution of 2.0mol/L at last.
Described iridic compound is a kind of in water-soluble iridous chloride, iridic chloride, tribromide iridium, triiodide iridium, the inferior iridium acid of chlordene sodium (III), the inferior iridium acid of chlordene potassium (III), the inferior iridium acid of chlordene ammonium (III), the inferior iridium acid of hexabromo sodium (III), the inferior iridium acid of hexabromo potassium (III), six sodium iridichlorides (IV), six potassium hexachloroiridates (IV) and six ammonium iridichlorides (IV).
Described stress depressant can be asccharin, thionamic acid, thionamic acid sodium, thionamic acid potassium, 1,5-naphthene sulfonic acid, 1,3, a kind of in 6-naphthalene trisulfonic acid, the thiocarbamide.
Described conducting salt can be a kind of in saltpetre, sodium sulfate, SODIUMNITRATE and the sodium-chlor.
Described pH value buffer reagent can be a kind of in citric acid, ammonium citrate, Trisodium Citrate, Tripotassium Citrate, SODIUM PHOSPHATE, MONOBASIC, potassium primary phosphate, dipotassium hydrogen phosphate, the Sodium phosphate dibasic.
(B) select electrode
Anode: a kind of in graphite, platinum or the iridium;
Negative electrode: the sheet material that negative electrode selects for use its surface to have electroconductibility gets final product, as C fiber, engine body material Ni
3The Al alloy, Mo, W, Pt, Re or Nb refractory metal.
(C) galvanostatic conditions galvanic deposit
PH value of aqueous solution is adjusted to 2.0～5.0 scopes during galvanic deposit iridium layer, and cathode current density is 0.01～4.00A/dm
2, low whipping speed is that 60～1500r/min, temperature are under 70～90 ℃, takes out behind galvanic deposit 1.0～50h, uses deionized water rinsing, after temperature is 35～55 ℃ of down dry 5～30min, has promptly made the iridium layer at the negative electrode plate surface then.Smooth, fine and close, the uniform particles of iridium layer of preparation, and do not have crackle.
Description of drawings
Fig. 1 is the iridium layer SEM picture that the embodiment of the invention 1 makes.
Figure 1A is the SEM picture that the iridium layer that makes of the embodiment of the invention 1 amplifies.
Fig. 2 is the EDS figure that obtains the iridium layer at the Pt electrode surface.
Embodiment
The present invention is described in further detail below in conjunction with example.
A kind of aqueous solution (cell liquid) that when prepared by electrodeposition iridium layer, adopts of the present invention, this aqueous solution is made up of iridic compound, stress depressant, conducting salt and pH value buffer reagent;
Consumption: include the iridic compound (described iridic compound is metering with the iridium) of 0.3～8g, the stress depressant of 0.002～0.09mol, the conducting salt of 0.002～0.12mol, the pH value buffer reagent of 0.002～0.06mol in the aqueous solution of the galvanic deposit iridium layer of preparation 100ml.
In the present invention, described iridic compound is iridous chloride IrCl soluble in water
3, iridic chloride IrCl
4, tribromide iridium IrBr
3, triiodide iridium IrI
3, the inferior iridium acid of chlordene sodium Na
3IrCl
6, the inferior iridium acid of chlordene potassium K
3IrCl
6, the inferior iridium acid of chlordene ammonium (NH
4)
3IrCl
6, the inferior iridium acid of hexabromo sodium Na
3IrBr
6, the inferior iridium acid of hexabromo potassium K
3IrBr
6, six sodium iridichloride Na
2IrCl
6, six potassium hexachloroiridate K
2IrCl
6With six ammonium iridichloride (NH
4)
2IrCl
6In a kind of.
In the present invention, described stress depressant can be asccharin, thionamic acid, thionamic acid sodium, thionamic acid potassium, 1,5-naphthene sulfonic acid, 1,3, a kind of in 6-naphthalene trisulfonic acid, the thiocarbamide.
In the present invention, described conducting salt can be a kind of in saltpetre, sodium sulfate, SODIUMNITRATE and the sodium-chlor.
In the present invention, described pH value buffer reagent can be a kind of in citric acid, ammonium citrate, Trisodium Citrate, Tripotassium Citrate, SODIUM PHOSPHATE, MONOBASIC, potassium primary phosphate, dipotassium hydrogen phosphate, the Sodium phosphate dibasic.
In the present invention, the scope of the pH value of aqueous solution during galvanic deposit iridium layer can be 2.0～5.0, and cathode current density can be 0.01～4.00A/dm
2, the solution temperature of galvanic deposit can be 70～90 ℃.Use the present invention, under continuous current mode condition, the step of carrying out prepared by electrodeposition iridium layer on negative electrode has:
(A) preparation cell liquid
At first a certain amount of stress depressant, conducting salt and pH value buffer reagent are dissolved in the deionized water successively, under heating, add a certain amount of iridic compound while stirring then, be settled to certain volume.The HCl solution of the NaOH solution of usefulness 2.0mol/L or 2.0mol/L is adjusted the pH value of the aqueous solution (cell liquid) at last.
Described iridic compound can be a kind of in iridous chloride soluble in water, iridic chloride, tribromide iridium, triiodide iridium, the inferior iridium acid of chlordene sodium (III), the inferior iridium acid of chlordene potassium (III), the inferior iridium acid of chlordene ammonium (III), the inferior iridium acid of hexabromo sodium (III), the inferior iridium acid of hexabromo potassium (III), six sodium iridichlorides (IV), six potassium hexachloroiridates (IV) and six ammonium iridichlorides (IV).
Described stress depressant can be asccharin, thionamic acid, thionamic acid sodium, thionamic acid potassium, 1,5-naphthene sulfonic acid, 1,3, a kind of in 6-naphthalene trisulfonic acid, the thiocarbamide.
Described conducting salt can be a kind of in saltpetre, sodium sulfate, SODIUMNITRATE and the sodium-chlor.
Described pH value buffer reagent can be a kind of in citric acid, ammonium citrate, Trisodium Citrate, Tripotassium Citrate, SODIUM PHOSPHATE, MONOBASIC, potassium primary phosphate, dipotassium hydrogen phosphate, the Sodium phosphate dibasic.
(B) select electrode
Anode: a kind of in graphite, platinum or the iridium;
Negative electrode: the sheet material that negative electrode selects for use its surface to have electroconductibility gets final product, as C fiber, engine body material Ni
3The Al alloy, Mo, W, Pt, Re or Nb refractory metal.
(C) galvanostatic conditions galvanic deposit
PH value of aqueous solution is adjusted to 2.0～5.0 scopes during galvanic deposit iridium layer, and cathode current density is 0.01～4.00A/dm
2, low whipping speed is that 60～1500r/min, temperature are under 70～90 ℃, takes out behind galvanic deposit 1.0～50h, uses deionized water rinsing, after temperature is 35～55 ℃ of down dry 5～30min, has promptly made the iridium layer at the negative electrode plate surface then.Smooth, fine and close, the uniform particles of iridium layer of preparation, and do not have crackle.
Embodiment 1:
In galvanic deposition cell, all be dissolved in 0.04mol thionamic acid, 0.05mol SODIUMNITRATE, 0.03mol citric acid in the deionized water of 50ml successively respectively; Add while stirring under the stirring velocity of 60r/min then with the iridium metering is the iridous chloride (IrCl of 3.8g
3), be warming up to 80 ℃ ± 2 ℃, iridous chloride is fully dissolved, add deionized water to solution 100ml, regulate pH value to 3.5 ± 0.2 with the NaOH solution of 2.0mol/L at last.
With graphite cake (the size 3.0cm of graphite cake * 2.0cm * 0.1cm, purity 99.9%) make anode, with Pt gold plate (the size 3.0cm * 2.0cm of Pt gold plate * 0.1cm) make negative electrode, anode surface and cathode surface are arranged parallel to each other, and the distance between anode and the negative electrode is about 20mm;
Logical direct current carries out galvanic deposit, adopts the continuous current mode, and cathode current density is 0.50A/dm
2
In 80 ℃ ± 2 ℃ electrodeposit liquid, take out the cathode base material behind the galvanic deposit 20h, use deionized water rinsing, under temperature is 35 ℃, behind the dry 10min, promptly made the iridium layer then on the Pt surface.
Utilize scanning electron microscope (SEM) to observe to the iridium layer that obtains on the Pt surface, its pattern as shown in Figure 1.As seen from Figure 1, have smooth, fine and close tectum at the Pt matrix surface; By Figure 1A as can be seen, more even at the particle of Pt matrix upper caldding layer, and particle is about 0.3 μ m.
The tectum that obtains on the Pt surface is carried out the EDS test, as shown in Figure 2.As shown in Figure 2, the tectum composition of Pt surface acquisition is metal iridium Ir.
Embodiment 2:
In galvanic deposition cell, all be dissolved in 0.01mol thionamic acid potassium, 0.01mol saltpetre, 0.004mol potassium primary phosphate in the deionized water of 50ml successively respectively; Add while stirring under the stirring velocity of 1000r/min then with the iridium metering is the inferior iridium acid of the chlordene sodium (III) of 1.0g, be warming up to 70 ℃ ± 2 ℃, make fully dissolving of the inferior iridium acid sodium of chlordene (III), add deionized water to solution 100ml, regulate pH value to 2.5 ± 0.2 with the HCl solution of 2.0mol/L at last.
Make anode with graphite cake (the size 3.0cm of graphite cake * 2.0cm * 0.1cm, purity 99.9%), with engine body material Ni
3Al alloy sheets (Ni
3The size 3.0cm of Al alloy sheets * 2.0cm * 0.1cm) make negative electrode, anode surface and cathode surface are arranged parallel to each other, and the distance between anode and the negative electrode is about 20mm;
Logical direct current carries out galvanic deposit, adopts the continuous current mode, and cathode current density is 3A/dm
2
In 70 ℃ ± 2 ℃ electrodeposit liquid, take out the cathode base material behind the galvanic deposit 5h, use deionized water rinsing, under temperature is 50 ℃, behind the dry 5min, promptly made the iridium layer then on the Pt surface.
To at Ni
3The iridium layer that Al alloy sheets surface obtains utilizes scanning electron microscope (SEM) to observe, at Ni
3Al alloy sheets matrix surface has smooth, fine and close tectum; At Ni
3The particle of Al alloy sheets matrix upper caldding layer is more even, and particle is about 1.1 μ m.
To at Ni
3The tectum that Al alloy sheets surface obtains carries out EDS test, Ni
3The tectum composition that Al alloy sheets surface obtains is metal iridium Ir.
Embodiment 3:
In galvanic deposition cell, all be dissolved in 0.08mol thiocarbamide, 0.10mol sodium-chlor, 0.05mol Tripotassium Citrate in the deionized water of 50ml successively respectively; Add while stirring under the stirring velocity of 800r/min then with the iridium metering is six ammonium iridichlorides (IV) of 7.0g, be warming up to 85 ℃ ± 2 ℃, make fully dissolving of six ammonium iridichlorides (IV), add deionized water to solution 100ml, regulate pH value to 4.5 ± 0.2 with the HCl solution of 2.0mol/L at last.
With graphite cake (the size 3.0cm of graphite cake * 2.0cm * 0.1cm, purity 99.9%) make anode, with the Re metal sheet (the size 3.0cm of Re metal sheet * 2.0cm * 0.1cm) make negative electrode, anode surface and cathode surface are arranged parallel to each other, and the distance between anode and the negative electrode is about 20mm;
Logical direct current carries out galvanic deposit, adopts the continuous current mode, and cathode current density is 1.50A/dm
2
In 85 ℃ ± 2 ℃ electrodeposit liquid, take out the cathode base material behind the galvanic deposit 10h, use deionized water rinsing, under temperature is 35 ℃, behind the dry 10min, promptly made the iridium layer then on the Pt surface.
Utilize scanning electron microscope (SEM) to observe to the iridium layer that obtains at the Re metal sheet surface, have smooth, fine and close tectum at the Re metal sheet surface; Particle at Re metal sheet upper caldding layer is more even, and particle is about 0.5 μ m.
The tectum that obtains at the Re metal sheet surface is carried out the EDS test, and the tectum composition that the Re metal sheet surface obtains is metal iridium Ir.
Adopt the logical direct current of embodiment 1 to carry out galvanic deposit, adopt the continuous current mode, cathode current density is 0.50A/dm
2In 80 ℃ ± 2 ℃ electrodeposit liquid, take out the cathode base material behind the galvanic deposit 20h, use deionized water rinsing, under temperature is 35 ℃, behind the dry 10min, promptly made the iridium layer then on the Pt surface.The required aqueous solution of preparation iridium layer consists of like this:
The aqueous solution electrodeposition that employing is prepared in the present invention prepares the iridium layer and can operate in lower temperature (70～90 ℃), the advantage such as process conditions such as solution composition, pH, current density are easy to control, be suitable for being deposited on the matrix surface of various shapes, equipment investment is few, technology is relatively simple, processing ease, therefore, preparing the iridium layer at aqueous solution electrodeposition has broad application prospects.
Claims (7)
1. the aqueous solution of a galvanic deposit iridium layer is characterized in that: containing iridic compound in the described aqueous solution of preparation 100ml is 0.3～8g, stress depressant 0.002～0.09mol, conducting salt 0.002～0.12mol, pH value buffer reagent 0.002～0.06mol in the concentration of iridium.
2. the aqueous solution of a kind of galvanic deposit iridium layer according to claim 1 is characterized in that: described iridic compound is water-soluble iridous chloride IrCl
3, iridic chloride IrCl
4, tribromide iridium IrBr
3, triiodide iridium IrI
3, the inferior iridium acid of chlordene sodium Na
3IrCl
6, the inferior iridium acid of chlordene potassium K
3IrCl
6, the inferior iridium acid of chlordene ammonium (NH
4)
3IrCl
6, the inferior iridium acid of hexabromo sodium Na
3IrBr
6, the inferior iridium acid of hexabromo potassium K
3IrBr
6, six sodium iridichloride Na
2IrCl
6, six potassium hexachloroiridate K
2IrCl
6With six ammonium iridichloride (NH
4)
2IrCl
6In a kind of.
3. the aqueous solution of a kind of galvanic deposit iridium layer according to claim 1 is characterized in that: described stress depressant is asccharin, thionamic acid, thionamic acid sodium, thionamic acid potassium, 1,5-naphthene sulfonic acid, 1,3, a kind of in 6-naphthalene trisulfonic acid, the thiocarbamide.
4. the aqueous solution of a kind of galvanic deposit iridium layer according to claim 1 is characterized in that: described conducting salt is a kind of in saltpetre, sodium sulfate, SODIUMNITRATE and the sodium-chlor.
5. the aqueous solution of a kind of galvanic deposit iridium layer according to claim 1 is characterized in that: described pH value buffer reagent is a kind of in citric acid, ammonium citrate, Trisodium Citrate, Tripotassium Citrate, SODIUM PHOSPHATE, MONOBASIC, potassium primary phosphate, dipotassium hydrogen phosphate, the Sodium phosphate dibasic.
6. the aqueous solution of a kind of galvanic deposit iridium layer according to claim 1 is characterized in that: the scope of pH value of aqueous solution can be 2.0～5.0.
7. the aqueous solution of an employing galvanic deposit iridium layer as claimed in claim 1 prepares the method for iridium layer, and it is characterized in that: under continuous current mode condition, the step of carrying out prepared by electrodeposition iridium layer on negative electrode has:
(A) preparation cell liquid
At first a certain amount of stress depressant, conducting salt and pH value buffer reagent are dissolved in the deionized water successively, under heating, add a certain amount of iridic compound while stirring then, be settled to certain volume.Adjust pH value of aqueous solution with the NaOH solution of 2.0mol/L or the HCl solution of 2.0mol/L at last.
Described iridic compound is a kind of in water-soluble iridous chloride, iridic chloride, tribromide iridium, triiodide iridium, the inferior iridium acid of chlordene sodium (III), the inferior iridium acid of chlordene potassium (III), the inferior iridium acid of chlordene ammonium (III), the inferior iridium acid of hexabromo sodium (III), the inferior iridium acid of hexabromo potassium (III), six sodium iridichlorides (IV), six potassium hexachloroiridates (IV) and six ammonium iridichlorides (IV).
Described stress depressant can be asccharin, thionamic acid, thionamic acid sodium, thionamic acid potassium, 1,5-naphthene sulfonic acid, 1,3, a kind of in 6-naphthalene trisulfonic acid, the thiocarbamide.
Described conducting salt can be a kind of in saltpetre, sodium sulfate, SODIUMNITRATE and the sodium-chlor.
Described pH value buffer reagent can be a kind of in citric acid, ammonium citrate, Trisodium Citrate, Tripotassium Citrate, SODIUM PHOSPHATE, MONOBASIC, potassium primary phosphate, dipotassium hydrogen phosphate, the Sodium phosphate dibasic.
(B) select electrode
Anode: a kind of in graphite, platinum or the iridium;
Negative electrode: the sheet material that negative electrode selects for use its surface to have electroconductibility gets final product, as C fiber, engine body material Ni
3The Al alloy, Mo, W, Pt, Re or Nb refractory metal.
(C) galvanostatic conditions galvanic deposit
PH value of aqueous solution is adjusted to 2.0～5.0 scopes during galvanic deposit iridium layer, and cathode current density is 0.01～4.00A/dm
2, low whipping speed is that 60～1500r/min, temperature are under 70～90 ℃, takes out behind galvanic deposit 1.0～50h, uses deionized water rinsing, after temperature is 35～55 ℃ of down dry 5～30min, has promptly made the iridium layer at the negative electrode plate surface then.Smooth, fine and close, the uniform particles of iridium layer of preparation, and do not have crackle.
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| CN102776537A (en) * | 2012-07-17 | 2012-11-14 | 北京航空航天大学 | Method for preparing Ir layer on Pt matrix in chloride fused salt system through electrolytic deposition |
| CN104195604A (en) * | 2014-09-17 | 2014-12-10 | 朱忠良 | Iridium plating solution for inhibiting crack generation and plating method thereof, and coated substance |
| CN104294311A (en) * | 2014-09-05 | 2015-01-21 | 武汉轻工大学 | Making method of platinum iridium oxide alloy electrode |
| CN104611744A (en) * | 2014-12-15 | 2015-05-13 | 常州大学 | Method for low temperature aqueous solution electrochemical codeposition of nickel iridium alloy |
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| CN102776537A (en) * | 2012-07-17 | 2012-11-14 | 北京航空航天大学 | Method for preparing Ir layer on Pt matrix in chloride fused salt system through electrolytic deposition |
| CN102776537B (en) * | 2012-07-17 | 2015-02-18 | 北京航空航天大学 | Method for preparing Ir layer on Pt matrix in chloride fused salt system through electrolytic deposition |
| CN104294311A (en) * | 2014-09-05 | 2015-01-21 | 武汉轻工大学 | Making method of platinum iridium oxide alloy electrode |
| CN104195604A (en) * | 2014-09-17 | 2014-12-10 | 朱忠良 | Iridium plating solution for inhibiting crack generation and plating method thereof, and coated substance |
| CN104611744A (en) * | 2014-12-15 | 2015-05-13 | 常州大学 | Method for low temperature aqueous solution electrochemical codeposition of nickel iridium alloy |
| CN104611744B (en) * | 2014-12-15 | 2017-06-06 | 常州大学 | A kind of method of low-temperature aqueous solution electrochemical co-deposition nickel iridium alloy |
| CN110892553A (en) * | 2017-07-12 | 2020-03-17 | 希勒及穆勒有限公司 | Low interfacial contact resistance material, use thereof and method for manufacturing said material |
| CN110892553B (en) * | 2017-07-12 | 2022-12-30 | 希勒及穆勒有限公司 | Low interfacial contact resistance material, use thereof and method for manufacturing said material |
| CN108130566B (en) * | 2018-01-31 | 2019-08-27 | 西北有色金属研究院 | Electroplate liquid and its electro-plating method for nickel base superalloy electroplating surface platinum layer |
| CN108130566A (en) * | 2018-01-31 | 2018-06-08 | 西北有色金属研究院 | For the electroplate liquid and its electro-plating method of nickel base superalloy electroplating surface platinum layer |
| CN109234757A (en) * | 2018-10-18 | 2019-01-18 | 任杰 | A kind of preparation method and application of uniform and stable ruthenium iridium bimetal-doped Ti electrode |
| US10612149B1 (en) | 2019-09-05 | 2020-04-07 | Chow Sang Sang Jewellery Company Limited | Platinum electrodeposition bath and uses thereof |
| CN114016097A (en) * | 2021-11-26 | 2022-02-08 | 湖南兴弘新材料科技有限公司 | Platinum plating solution and preparation method and application thereof |
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