CN101952965B - Method for providing a series connection in a solar cell system - Google Patents
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- CN101952965B CN101952965B CN2008801215770A CN200880121577A CN101952965B CN 101952965 B CN101952965 B CN 101952965B CN 2008801215770 A CN2008801215770 A CN 2008801215770A CN 200880121577 A CN200880121577 A CN 200880121577A CN 101952965 B CN101952965 B CN 101952965B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present, invention pertains to a process for providing a series connection in a solar cell system comprising tne provision of a solar cell, system comprising a transparent conductive oxide layer, a photovoltaic layer, and a back electrode, wherein the system is divided into at least two individual cells wherein the transparent conductive oxide layer of one cell is connected through a conductive interconnect with the back electrode of an adjacent cell, and the transparent conductive oxide layer is provided with an insulating interrupt, on one side of the interconnect and the back electrode is provided with an interrupt on the other side or the interconnect, the process being characterised in that the interrupt in the transparent conductive oxide layer is provided through vitrification of the transparent conductive oxide layer. A solar cell system provided with a series connection wherein the interrupt in the TCO layer is made up of a vitriried section of the TCO is also claimed.
Description
Technical field
The present invention relates to a kind of method that is connected in series that provides in the solar cell system, and the solar cell system that comprises the solar cell that is connected in series.
Background technology
The solar cell that is also referred to as photovoltaic cell generally includes carrier and by being positioned at photovoltaic (PV) layer that the preceding electrode that comprises transparent conductive oxide (TCO) (in the light-receiving side of battery) and the semi-conducting material between the rear electrode (at the battery back) are formed.Preceding electrode is transparent, makes incident optical energy get at and reach semi-conducting material that wherein incident radiation converts electric energy into.Light can be used for producing electric current by this method, and it provides the concern substitute to for example fossil fuel or nuclear energy.
The maximum voltage of solar cell is formed, is determined by the character of semi-conducting material with by incident intensity more especially by battery.When the surface area of solar cell increases, produce more electric energy, but the voltage maintenance is identical.For increasing voltage, solar cell usually is divided into to be connected in series and forms the independent sub-battery of solar cell system.Be also referred to as through between the rear electrode of the preceding electrode of a battery and another battery, setting up that interconnected conduction contact hinders each preceding electrode that all is in interconnected difference end simultaneously and rear electrode is realized this point to prevent short circuit.Can be through for example utilizing laser or in the electrode of solar battery layer, providing groove to realize this point by etching or any other patterning process.For reducing not energy-producing zone in the solar cell as far as possible, interconnected with interrupt being positioned as close to and interconnected and interruption must be narrow as much as possible.
In an embodiment known in the art, the following realization is connected in series: be deposited on the patterned parallel groove that interruption in the preceding electrode of formation is arranged of (glass) suprabasil transparent conductive oxide (TCO) layer.Be deposited on that photovoltaic (PV) layer of tco layer top is also patterned to have a parallel groove, these parallel grooves constitute the interconnected basis between the electrode and adjacent cell rear electrode before the battery.Rear electrode is deposited on the PV layer then, and patternedly groove is arranged form to interrupt.Rear electrode material through being deposited in the groove in the PV layer forms interconnected.
People such as P.Pernet have proposed to make another process that is connected in series in the solar cell system on the Proc.2nd of Wien World ConferencePV in July, 1998.According to this process, in substrate, before plated metal rear electrode, photovoltaic layer and ITO or the ZnO after the electrode, in a process steps, adopt the groove of selecting laser scribing that three different depths are provided.Suprabasil deep trench is filled insulating compound to form the interruption in the rear electrode.The overlapping electrocondution slurry of time dark trench fill and the insulation paste in the deep trench is interconnected to form in the metal rear electrode.Shallow trench in the photovoltaic layer is the interruption in the preceding electrode.
WO 2003001602 has described a kind ofly has the method for the solar cell that is connected in series through the method manufacturing of adopting interim substrate, and this method comprises the step that the groove of electrode before transparent conductive oxide is provided from the incident light side of final solar cell system.
As stated, in the process that is connected in series was provided, the preceding electrode and the electrode on the interconnected every side between another solar cell rear electrode that are necessary to interrupt a solar cell usually were to prevent short circuit.This point comprises the groove that provides through preceding electrode in many processes, and preceding electrode is including transparent conducting oxide layer and also will be expressed as tco layer that this groove is fill insulant then.
Having been found that usually provides the groove through tco layer to have several shortcomings through laser.
At first, the delineation groove possibly destroy the material below the tco layer in tco layer.Can pollute solar cell and for example cause shunting if for example following material is metallic substrates then the fragment that can be this material of metal.When forming groove on the layers such as TCO and when through layer for example photovoltaic layer that covers tco layer with all like this when rear electrode layer is delineated alternatively.Destruction to substrate etc. also can have a negative impact to the property of system.Like this equally when when groove is provided, tco layer occurring at the photovoltaic layer top.In tco layer, providing groove to produce following PV layer destroys.
Secondly, the substrate below bottom electrode is the situation of interim substrate, can form the weakness of system through the insulation tank of following electrode.For example, WO98/13882 and WO99/49483 have described a kind of method of making photovoltaic foil, comprise the steps; For example provide and to be the interim substrate of aluminium foil; In interim substrate, apply including transparent conducting oxide layer, on tco layer, apply photovoltaic layer, on photovoltaic layer, apply rear electrode layer as preceding electrode; On rear electrode, apply carrier, and remove interim substrate.In these systems, provide when being connected in series, can in interim substrate, apply groove through tco layer (if alternatively through the PV layer and have rear electrode), groove is filled insulating material then.When then when for example etching process is removed interim substrate, the groove that appears at the there contacts with etchant with insulating material, and this point can be destroyed and be connected in series.
Manufacturing comprises that the common problem of the solar cell system of the solar cell that is connected in series is to reorientate accurately between process steps number and the process steps and has formed complicacy and the expensive process of cost.
Therefore, need a kind of process that is connected in series of wherein avoiding providing groove through tco layer.Also need a kind of wherein avoiding through coming across the process that interim suprabasil tco layer provides providing of groove to be connected in series.The invention provides such process.To know other advantage from following explanation according to process of the present invention and specific embodiment thereof.
Summary of the invention
The present invention relates to a kind of process that is connected in series in the solar cell system that provides; This process comprises provides the solar cell system that comprises including transparent conducting oxide layer, photovoltaic layer and rear electrode; Wherein this system is divided at least two independent batteries; The including transparent conducting oxide layer of one of them battery is connected with the rear electrode of adjacent cell through conductive interconnections; And including transparent conducting oxide layer has the insulation interruption in this interconnected side, and rear electrode has the interruption on this interconnected opposite side, and this process feature is to provide the insulation in the including transparent conducting oxide layer to interrupt through the vitrifying including transparent conducting oxide layer.
The invention still further relates to a kind of solar cell system that comprises including transparent conducting oxide layer, photovoltaic layer and rear electrode; This system comprises at least two independent batteries; The including transparent conducting oxide layer of one of them battery is connected with the rear electrode of adjacent cell through conductive interconnections; Wherein including transparent conducting oxide layer has the insulation interruption in this interconnected side; And rear electrode has the interruption on this interconnected opposite side, this system features be transparent before insulation in the electrode interrupt processing by the vitrifying transparent conductive oxide.It should be noted that interruption insulation usually in itself, no matter whether so specify.
Key of the present invention is to recognize and can obtains the interruption in the including transparent conducting oxide layer (also being expressed as tco layer) through vitrifying TCO.Suitable transparent conductive oxide comprises indium tin oxide, zinc oxide, Al-Doped ZnO, fluorine, gallium or boron, cadmium oxide, tin oxide, metallic tin hydrochlorate for example Zn or Cd stannate and mix F SnO
2, mix Sb SnO
2, mix P TCO, cuprate such as Sr base cuprate for example.
Vitrifying process conversion transparent conductive oxide interrupts to form transparent insulation.Can provide tco layer to carry out the vitrifying process through for example utilize laser with energy, wherein the amount of the energy that provides be enough to the vitrifying tco layer but be not enough to this layer of cutting.The selection of suitable glasses method comprises that the selection of the laser of suitable wavelength belongs to those skilled in the art's limit of power.In one embodiment, wherein when not covered by another layer, on TCO, carry out consolidation step, UV laser generally is suitable.Instance comprises triple or quadruple Nd (pulse) laser and excimers (pulse) laser.The light that these lasers send is selectively absorbed by tco layer, and this point can make the tco layer vitrifying.
In another embodiment, wherein TCO is capped silicon PV layer and rear electrode alternatively when carrying out consolidation step, and suitable vitrifying process comprises (532nm) laser of employing " green ".This laser fusing silicon layer.Silicon layer flows to tco layer with heat, and TCO is vitrifying then.
In one embodiment, when carrying out the vitrifying process, tco layer is positioned at permanent substrate for example in substrate of glass or the heat-resisting transparent polymer substrate.Permanent substrate is for preparing to use the substrate that will not remove before the solar cell in the context of this specification.In another embodiment, when carrying out the vitrifying process for example when utilizing like WO98/13882 or the described process of WO99/49483, tco layer is positioned in the interim substrate.The substrate of interim substrate in the context of this specification for before being suitable for using solar cell, removing from TCO.Tco layer is on the photovoltaic layer when carrying out the vitrifying process in another embodiment.This embodiment can be more not preferred.
Can for example adopt suitable laser in enterprising oozy glass processes such as tco layers through energy directly is provided to tco layer.
Also possibly for example adopt suitable laser array to close consolidation step and groove is provided through photovoltaic layer.The amount of the energy that in this case, laser provided is chosen as and makes and to provide groove to be enough to the tco layer under the vitrifying PV layer simultaneously through the PV layer.This process is effective especially when adopting silica-based PV layer.Because silicon is the excellent energy absorber when selecting suitable laser, so that silicon layer will become will be very hot, this point will promote the vitrifying of tco layer.
Also possibly for example adopt suitable laser array to close consolidation step and groove is provided through photovoltaic layer and rear electrode layer.Again, in this case, for example be chosen as and make through rear electrode layer, provide groove to be enough to the tco layer under the vitrifying PV layer simultaneously through the PV layer by the amount of the energy that laser provided.To be necessary to provide on the insulating material in rear electrode " bridge " to connect in this embodiment usually in rear electrode, to produce.For this reason, think that this embodiment is more not preferred.
The mode that is connected in series is inessential to the present invention.Usually, the preceding electrode and the rear electrode that in interconnected, are electrically connected simultaneously at interconnected different ends of the rear electrode of preceding electrode through guaranteeing a battery and adjacent cell all interrupts setting up being connected in series.
Insulation through in the vitrifying structure tco layer is interrupted.According to the manufacturing approach of interrupting, it can follow in the PV layer and the groove that passes through rear electrode alternatively.If groove occurs in these layers, then it is with fill insulant.
Usually through adopting the laser configuration groove and on rear electrode, applying interruption with the filling insulating material groove.According to the manufacturing approach of interrupting, it can follow the groove in the PV layer.If occur groove in the PV layer then it will be filled insulating material.
When applying groove for the protection below layer, can apply the insulating material bar in the position of interruption groove to be applied.Insulating material will form short circuit to prevent the material beneath fusing as the laser stop.As far as some embodiment that is discussed below, will clearly describe provides the insulating material bar, but these also are used for other embodiment.Insulating material can be applied on tco layer and/or the PV layer.
Can set up interconnected in every way.Can be through applying through the groove of PV layer and setting up interconnected to its filled conductive material.Groove can extend or extend past tco layer, rear electrode layer or tco layer and rear electrode layer are not two-layer.This point will for example depend on the process steps that applies groove.In one embodiment, the electric conducting material that is used for filling PV layer groove is a rear electrode material.If the PV layer is the amorphous Si layer, then also can sets up conduction with rear electrode and be connected through fusion amorphous Si layer.If the PV layer is the amorphous Si layer, then also can set up interconnected through Si being recrystallised to electric conducting material.But this selection is more not preferred.It is more not preferred through tco layer when expectation does not destroy the layer under the tco layer, to extend interconnected groove.
Apply interconnected inessential and will depend on that what is optimum in applied detailed process with the order of interrupting groove.
Usually interconnected by following factor decision and interrupt width.In interconnected and interruption position, solar cell can not convert light into.Consider this point, interconnected and interruption must be narrow as much as possible.On the other hand, it must be enough wide to guarantee to obtain desired effects, electrode and rear electrode before promptly interrupting different layers and be connected with enough conductivity with enough insulation.
The width that interrupts is generally 2 to 400 microns, is preferably 5 to 250 microns.Interconnected width is generally 0.1 to 200 micron, is preferably 5 to 50 microns.
Interrupt and be connected in series separately interconnected between distance in the place that comes across different grooves usually between 5 and 500 microns, be more especially between 10 and 250 microns.
When applying, the insulating material bar that can put on the position of wherein interruption to be applied should be enough wide so that the groove of the interruption in this width range can conveniently be provided.Usually, this width is between 25 and 1000 microns, preferably between 50 and 400 microns, more preferably between 50 and 200 microns.
Embodiment
Can imagine various embodiment according to process of the present invention and system.
The first embodiment of the present invention comprises the steps:
Provide or be the substrate (1) of transparent permanent substrate or interim substrate
In substrate, apply including transparent conducting oxide layer (2) and guarantee including transparent conducting oxide layer part (vitrifying v),
Apply photovoltaic layer (3) (PV layer) to tco layer, and in the PV layer, provide groove downwards to tco layer
Apply rear electrode layer (4) in the groove that on the PV layer and in the PV layer, occurs and rear electrode layer is connected to interconnected (6) of including transparent conducting oxide layer, and in rear electrode layer, provide groove (bg) downwards to the PV layer to form
On rear electrode, apply cover layer (5) and
In substrate (1) is the place of interim substrate, removes interim substrate.
Fig. 1 illustrates this embodiment, importantly, notices, the invention is not restricted to shown in the figure.
Another embodiment of the present invention comprises following general step:
Be provided as the substrate (1) of transparent permanent substrate or interim substrate
In substrate, apply including transparent conducting oxide layer and guarantee including transparent conducting oxide layer part (vitrifying v),
On tco layer, apply photovoltaic layer (3) (PV layer),
On the PV layer, apply rear electrode layer (4) and on including transparent conducting oxide layer, apply first groove, and in rear electrode layer, apply second groove (bg) downwards to the PV layer through rear electrode and PV layer, and interconnected to the first trench fill electric conducting material (6) to form
On rear electrode, apply cover layer (5) carrier and
In substrate (1) is the place of interim substrate, removes interim substrate.
This embodiment has been shown among Fig. 2.Be important to note that and the invention is not restricted to perhaps not be limited shown in this accompanying drawing.
Another embodiment of the present invention comprises following general step:
Be provided as the substrate (1) of transparent permanent substrate or interim substrate
In interim substrate, apply including transparent conducting oxide layer
On including transparent conducting oxide layer, apply photovoltaic (PV) layer (3); For example adopt laser that first groove is provided on including transparent conducting oxide layer through the PV layer; Apply certain quantity of energy and make part (the v) vitrifying of the including transparent conducting oxide layer under the groove; For example adopt laser that second groove is provided through the PV layer, apply certain quantity of energy and make including transparent conducting oxide layer under the groove not by vitrifying, to the first trench fill insulating material (8); And apply insulation strip if desired, and set up conduction through the PV layer and connect (precursor) down to including transparent conducting oxide layer
Applying rear electrode layer (4) on the PV layer and in rear electrode (4), providing groove, if perhaps exist down to insulation strip down to the PV layer
Apply alternatively permanent carrier (5) and
In substrate (1) is the place of interim substrate, removes interim substrate.
This embodiment has been shown among Fig. 3.Be important to note that and the invention is not restricted to perhaps not be limited shown in this accompanying drawing.
In this embodiment, and in other embodiments of the invention, on the PV layer, apply rear electrode (4), and in rear electrode (4), provide groove downwards, if perhaps exist down to insulation strip to the PV layer.Can provide groove that this groove is provided then through for example adopting laser to apply rear electrode.Also possibly on the PV layer, apply outstanding (lift-off) compound, on PV layer and outstanding compound, rear electrode is provided then, remove outstanding compound then.Use the further information of outstanding compound when in solar cell, groove being provided, with reference to WO2008/074879, its relevant portion combines as a reference at this.
As stated; The invention still further relates to a kind of solar cell system that comprises including transparent conducting oxide layer, photovoltaic layer and rear electrode; This system divides is at least two independent batteries; The including transparent conducting oxide layer of a battery is connected with the rear electrode of adjacent cell through conductive interconnections simultaneously; Wherein including transparent conducting oxide layer has in the insulation of this interconnected side and interrupts, and rear electrode has the interruption on this interconnected opposite side, this system features be transparent before interruption in the electrode process by the vitrifying transparent conductive oxide.
In one embodiment, the vitrifying in the tco layer interrupts following the insulating material (for example as shown in Figure 3) that interrupts in the PV layer of top.In another embodiment, the vitrifying in the tco layer interrupts not following the insulating material (for example as illustrated in fig. 1 and 2) that interrupts in the PV layer of top.
In one embodiment, the interconnected rear electrode material (for example as shown in figs. 1 and 3) that is filled.The interconnected in another embodiment different conductive materials (for example as shown in Figure 2) that is filled.Provide interconnected through fusion rear electrode and silicon PV layer in another embodiment.Can by the groove that only passes through the PV layer (for example as shown in figs. 1 and 3), by through the groove (for example as shown in Figure 2) of PV layer and rear electrode, or constitute interconnected by groove (not shown) through PV layer, rear electrode and including transparent conducting oxide layer.
In one embodiment, the insulating material in the PV layer that interrupts the below is followed in the interruption in the rear electrode layer.In another embodiment, insulating material in the PV layer that interrupts the below (for example like Fig. 1, shown in 2 and 3) is not followed in the interruption in the rear electrode.
Those skilled in the art can make up suitably and interrupt and interconnected the foregoing description clear.
Another preferred embodiment of the present invention comprises following general step:
Be provided as the substrate (1) of transparent permanent substrate or interim substrate
Apply including transparent conducting oxide layer on basad
On including transparent conducting oxide layer, apply photovoltaic layer (3) (PV layer)
For example adopt laser that the groove through the PV layer is provided on including transparent conducting oxide layer; Applying certain quantity of energy makes the part of beneath trenches TCO by vitrifying; The unverified part that guarantees including transparent conducting oxide layer at least one side of groove does not cover with insulation PV layer material
Side at groove applies insulating material (8)
Upward and in the groove itself apply rear electrode layer (4) and provide groove down to the PV layer at PV layer and insulating material (8) through rear electrode
On rear electrode, apply if desired the cover layer (not shown) and
In substrate (1) is the place of interim substrate, removes interim substrate.
The key of this embodiment is to guarantee that the unverified part of including transparent conducting oxide layer at least one side of groove in the PV layer does not cover with insulation PV layer material.In one embodiment, the PV material does not cover the unverified part of tco layer.The unverified of tco layer part covers with the PV layer material that in the situation of the silica-based PV layer that for example obtains through fusing and crystallization PV layer again, has conducted electricity in another embodiment.
Between including transparent conducting oxide layer and the rear electrode interconnected by be applied to groove in rear electrode directly conduct electricity the TCO that is connected said unverified part (situation that is not covered in the unverified of tco layer) by the PV material, or the said unverified of the TCO that is connected by current-carrying part conduction with the PV layer that covers by rear electrode conversely partly form.
Illustrated among Fig. 4 wherein between the including transparent conducting oxide layer and rear electrode interconnected by be applied to groove in rear electrode directly conduct electricity the version of this embodiment that the unverified of the TCO that is connected partly forms.
The version of this embodiment that the said unverified of the TCO that current-carrying part conduction interconnected and the PV layer that is covered by rear electrode again between the including transparent conducting oxide layer and rear electrode is connected partly forms has been shown among Fig. 5 wherein.The zone of representing with arrow is for for example through the become part of PV layer of conduction of fusing and crystallization again.
Once more, be important to note that and the invention is not restricted to shown in this accompanying drawing or be not limited.
Exist and can be used for providing groove to apply certain quantity of energy simultaneously and make TCO guarantee the whole bag of tricks that the unverified part of including transparent conducting oxide layer at least one side of groove does not cover with insulation PV layer material in part (V) vitrifying of beneath trenches through PV course including transparent conducting oxide layer.
In one embodiment, apply said groove, wherein apply the groove of broad through silicon layer, wherein remove the TCO not vitrifying of silicon below making at first step through two steps, and in second step tco layer bar vitrifying in first groove.In another embodiment; Apply said groove through two steps; Wherein apply the feasible vitrifying that guarantees the beneath trenches tco layer of narrow groove through silicon PV layer at first step; And in the silicon PV layer of second step above first groove, apply the groove of broad, wherein silicon is removed or is recrystallised to the conduction form at the edge of narrow groove, and further vitrifying of the TCO of broad beneath trenches.The advantage of this embodiment is that it allows good process control.
In another embodiment, apply groove through single step, wherein the amount of energy is selected as and make obtains the curved grooves profile, wherein for example shown in Figure 4 and 5 the vitrifying of including transparent conducting oxide layer part narrower than the groove in the PV layer.According to the for example character of PV layer, as shown in Figure 4, the PV layer of fusing can " be withdrawn " and arrived the groove edge in this embodiment, so the unverified of including transparent conducting oxide layer part (basically) does not contain the PV layer.As shown in Figure 5, the PV layer of the unverified of TCO part top also maybe be for example conducts electricity through fusing and crystallization again.
One of them advantage of this system is the interruption and interconnected the coming across in the same groove of tco layer.Compare with other system, this point means that replacement only need provide single groove through two grooves of PV layer.This point makes this process need laser capacity still less.
The invention still further relates to a kind of solar cell system that comprises including transparent conducting oxide layer, photovoltaic layer and rear electrode; This system divides is at least two independent batteries; The including transparent conducting oxide layer of one of them battery is connected with the rear electrode of adjacent cell through conductive interconnections; Wherein including transparent conducting oxide layer has the insulation interruption in this interconnected side; And rear electrode has the interruption on this interconnected opposite side; This system features be transparent before interruption in the electrode process by the vitrifying transparent conductive oxide, between including transparent conducting oxide layer and the rear electrode interconnected by be applied to groove in rear electrode directly conduct electricity the TCO that is connected the unverified part or conduct electricity the unverified of the TCO that is connected by current-carrying part and partly form with the PV layer that covers by rear electrode conversely.
Mentioned the instance of suitable transparent conductive oxide above.The SnO2 of preferred doped F, this is because preferably in 500 to 600 ℃ scope, apply Shi Qike under 400 ℃ the temperature and form the expectation plane of crystal with cylindricality light scattering structure when being higher than.
Can be for example sticking through Organometallic Chemistry vapor deposition (MOCVD), sputter, atmospheric pressure chemical vapor deposition (APCVD), PECVD, injection pyrolysis, evaporation (physical vapor deposition), plating, net through methods known in the art, sol-gel process or the like applies TCO.Preferably be higher than 250 ℃ temperature, preferably be higher than 400 ℃, more preferably apply under the temperature between 500 and 600 ℃ that thereby tco layer can obtain to expect to form, the tco layer of character and/or structure.The thickness of tco layer usually between 200 and 2000nm between, be more especially between 500 and 1000nm between.
The character of PV layer is inessential to the present invention.Here should be noted that term " PV layer " in this manual perhaps " photovoltaic layer " comprise the whole system that needs absorbing light and the layer that is converted into electricity.The same with the method for applied layer, known suitable layer structure.Various thin film semiconductors can be used for making the PV layer.Instance is amorphous Si (a-Si:H), microcrystal silicon, silicon, polysilicon, amorphous carborundum (a-SiC), amorphous silicon-germanium (a-SiGe) and a-SiGe:H.In addition, can comprise CIS (two copper indium diselenide, CuInSe2) PV battery, Cu (In, Ga) (Se, S) 2PV battery, CdTe (cadmium telluride) battery and/or dye sensitization and organic PV battery according to the PV layer in the solar cell foil of the present invention.As known in the art, also can use the combination of various material layers, promptly so-called series-connected cell.Suitable combination comprises the combination of amorphous silicon and microcrystal silicon, and the combination of amorphous silicon and amorphous silicon-germanium.
The PV layer is preferably silicon layer when TCO comprises fluorine doped tin oxide.The PV layer will generally include one group, perhaps organize p-doping, intrinsic and n-doping amorphous si-layer more in this case, and the p-doped layer is positioned at and receives a side of importing light.
The gross thickness of PV layer, the gross thickness that is more especially all a-Si layers will be in 100 to 3000nm magnitude usually.
The character of rear electrode is also inessential to the present invention.Preferably it is not only as reflector but also as electrode.Usually, the thickness of rear electrode will be for about 50 to 500nm, and it can comprise any suitable material with light reflectance properties, is preferably the for example combination of aluminium, silver or both layers of metal.These metal levels preferably can for example be lower than 150 ℃ and apply through for example (in a vacuum) physical vapor deposition or sputter under lower temperature.As far as silver, expectation be at first to apply the adhesion promoter layer.TiO2 and ZnO be the adhesion promoter layer suitable material instance and when with suitable thickness for example 20-200nm have the advantage of also handling reflectivity properties when particularly the magnitude of 50-100nm applies.
The character of insulating material that is used for filling groove is inessential to process according to the present invention.Select suitable material to belong in those skilled in the art's the limit of power.With clear, wait to select condition that material must be able to stand to use solar cell foil for example UV, humidity and temperature resistance like those skilled in the art.The instance of suitable material is for example polyurethane, epoxy resin, epoxy amine, polyester and an acrylic acid ester of insulating synthetic resin.The method for optimizing that applies insulating material is silk screen printing, ink-jet and ingredients technical.Those skilled in the art will know other appropriate method that applies insulating material.Insulation strip also can be processed and can for example be applied through ink-jet, batching or other printing technology by said insulating material.
As discussed previously, can set up interconnected with the whole bag of tricks.If through at first providing groove then its filled conductive material to be set up, then suitable electric conducting material comprises the cross-linked polymer coating of adding the conductive filler of for example silver-colored particle or nickel flock to it, and is for example noted earlier.Such coating is well known to those skilled in the art.Can adopt for example silk screen printing of method, printing, batching or the spraying technique known to apply this coating.Also possibly provide and be welded to connect.Alternatively, can be through the for example aluminium foundation conduction connection of flame jet metal.Known this flame jet technology of those skilled in the art.
The present invention is used in to provide in the solar cell foil that adopts interim substrate manufacturing and is connected in series.The process of solar cell foil is made in the interim substrate of employing known in the art.It for example is described in WO98/13882, WO99/49483, WO01/47020, WO01/78165, WO03/001602 and WO05/015638, and the disclosure of these documents is hereby incorporated by.
When using interim substrate, it must satisfy ask for something.Its must be fully heat-resisting to stand during making solar cell foil, to be more especially general environment during deposition TCO and PV layer.It must be enough firmly to support solar cell foil during manufacture.It must not damage the latter from the tco layer removal easily during the course.Those skilled in the art can select suitable interim substrate in these instruct framework.With reference to above-mentioned publication.It is preferably metal or metal alloy paper tinsel.The main cause of this point is that so usually anti-high treatment temperature of paper tinsel, evaporation slowly and are prone to adopt known etching technique to remove.Suitable metal comprises steel, aluminium, copper, iron, nickel, silver, zinc, molybdenum and alloy or its multilayer.Because economic cause wherein preferably adopts Fe, Al, Cu or its alloy.According to its performance (and considering the cost problem) most preferably aluminium, iron and copper.The etchant and the technology of suitable removal metal known in the art.
For example expectation provides for example etch resistant layer of non-reduced diffusion impervious layer to interim substrate when copper is used as interim substrate, is more especially zinc oxide.
If desired, substrate temporarily can have the transparent insulation spacer.Because its transparency, this layer can be stayed TCO and go up the protective layer as TCO.The transparent insulation spacer is preferably processed by glass.
For removing conveniently, interim substrate is preferably thin as much as possible.Certainly, it must make other layer can deposit above that and it must be fixed together these layers, but this point does not require that usually its thickness is greater than 500 microns (0.5mm).Thickness preferably is in the scope of 1 to 200 millimeter (0.2mm).According to modulus of elasticity, the minimum thickness of lot of materials will be 5 microns.Therefore, preferred 5-150 micron, be more especially the thickness of 10-100 micron.
Clear like those skilled in the art institute, solar cell foil can have the carrier on the rear electrode or have sealant when suitable, and these 2 to be those skilled in the art institute known.As carrier preferably is provided in the above described in the list of references on rear electrode when utilizing interim substrate process.About the above-mentioned document of further information reference of the carrier among these embodiment, the relevant portion of these documents in this combination as a reference.The suitable carriers layer comprise thin polymer film with and on for example be applied with the metal forming of insulation (dielectric) superficial layer.The thickness of carrier is preferably 75 microns to 10mm.Preferred range be 100 microns to 6mm and more particularly 150 microns to 300 microns.
Claims (9)
1. one kind provides the method that is connected in series in the solar cell system; This method comprises provides the solar cell system that comprises including transparent conducting oxide layer, photovoltaic layer and rear electrode; Wherein this system is divided at least two independent batteries; The including transparent conducting oxide layer of one of them battery is connected with the rear electrode of adjacent cell through conductive interconnections, and said including transparent conducting oxide layer has the insulation interruption in this interconnected side, and said rear electrode has the interruption on this interconnected opposite side; This method feature is, through the vitrifying including transparent conducting oxide layer interruption in the including transparent conducting oxide layer is provided.
2. according to the process of claim 1 wherein that the layer below the said including transparent conducting oxide layer is substrate.
3. according to the method for claim 1 or 2, wherein through said including transparent conducting oxide layer being provided energy carry out said vitrifying process, the amount that energy wherein is provided is enough to the vitrifying including transparent conducting oxide layer but is not enough to this layer of cutting.
4. according to the method for claim 3, wherein adopt the said including transparent conducting oxide layer of laser glassization.
5. according to the method for claim 3; Wherein said consolidation step combines with the groove through photovoltaic layer is provided; Wherein the amount of the energy that provides is selected as and makes and to provide groove to be enough to the including transparent conducting oxide layer of vitrifying photovoltaic layer below simultaneously through said photovoltaic layer, and wherein said groove is filled electric conducting material to form said conductive interconnections.
6. according to the method for claim 1, comprise the steps:
Substrate (1) as transparent permanent substrate or interim substrate is provided,
In said substrate, apply including transparent conducting oxide layer,
Apply photovoltaic layer (3) to said including transparent conducting oxide layer; Provide through first groove of said photovoltaic layer down to said including transparent conducting oxide layer; Apply certain quantity of energy and make part (the v) vitrifying of the including transparent conducting oxide layer under said first groove; Second groove through said photovoltaic layer is provided, applies certain quantity of energy and make including transparent conducting oxide layer under said second groove not by vitrifying, to the first trench fill insulating material (8); And set up the precursor that conduction connects or conduction connects down to including transparent conducting oxide layer through photovoltaic layer
On photovoltaic layer, apply rear electrode (4),
In rear electrode (4), the groove as the said interruption in the said rear electrode is provided,
Apply permanent carrier (5),
In said substrate (1) is interim substrate part, removes said interim substrate.
7. method as claimed in claim 1 comprises the steps:
Substrate (1) as transparent permanent substrate or interim substrate is provided,
In said substrate, apply including transparent conducting oxide layer (2),
On said including transparent conducting oxide layer, apply photovoltaic layer (3),
Provide through the groove of said photovoltaic layer down to said including transparent conducting oxide layer; Applying certain quantity of energy makes the part of said including transparent conducting oxide layer of said beneath trenches (v) by vitrifying; Guarantee not cover with the photovoltaic layer material in the unverified part of at least one the above including transparent conducting oxide layer of side of said groove
Side at said groove applies insulating material (8),
On photovoltaic layer and on the insulating material (8) and in the groove itself, apply rear electrode layer (4), and the groove down to photovoltaic layer be provided in said rear electrode layer,
On said rear electrode, apply cover layer and
When said substrate (1) is interim substrate, remove said interim substrate.
8. solar cell system; Comprise including transparent conducting oxide layer, photovoltaic layer and rear electrode; This system is divided at least two independent batteries; Wherein the including transparent conducting oxide layer of battery is connected with the rear electrode of adjacent cell through conductive interconnections; Wherein said including transparent conducting oxide layer has the insulation interruption in this interconnected side, and said rear electrode has the interruption on this interconnected opposite side, it is characterized in that the interruption in the said including transparent conducting oxide layer is processed by the vitrifying transparent conductive oxide.
9. according to the solar cell system of claim 7; Between wherein said including transparent conducting oxide layer and the said rear electrode interconnected by be applied to groove in rear electrode directly conduct electricity the unverified of the including transparent conducting oxide layer that is connected and partly provide, or partly provide by the unverified of the including transparent conducting oxide layer that is connected with the current-carrying part conduction of said photovoltaic layer, the current-carrying part of wherein said photovoltaic layer is covered by said rear electrode.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP07123962.8 | 2007-12-21 | ||
| EP07123962 | 2007-12-21 | ||
| EP08101700A EP2073269A1 (en) | 2007-12-21 | 2008-02-18 | Method for providing a series connection in a solar cell system |
| EP08101700.6 | 2008-02-18 | ||
| PCT/EP2008/067692 WO2009080640A2 (en) | 2007-12-21 | 2008-12-17 | Method for providing a series connection in a solar cell system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101952965A CN101952965A (en) | 2011-01-19 |
| CN101952965B true CN101952965B (en) | 2012-07-18 |
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| CN2008801215770A Expired - Fee Related CN101952965B (en) | 2007-12-21 | 2008-12-17 | Method for providing a series connection in a solar cell system |
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| Country | Link |
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| US (1) | US20100252089A1 (en) |
| EP (1) | EP2073269A1 (en) |
| JP (1) | JP4633201B1 (en) |
| KR (1) | KR20100102134A (en) |
| CN (1) | CN101952965B (en) |
| TW (1) | TW200939496A (en) |
| WO (1) | WO2009080640A2 (en) |
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| DE102010027747A1 (en) * | 2010-04-14 | 2011-10-20 | Robert Bosch Gmbh | Method for producing a photovoltaic module with back-contacted semiconductor cells and photovoltaic module |
| US20120000519A1 (en) * | 2010-07-01 | 2012-01-05 | Primestar Solar | Transparent electrically conductive layer and method for forming same |
| DE102011007544A1 (en) * | 2011-04-15 | 2012-10-18 | Von Ardenne Anlagentechnik Gmbh | Method and device for thermal treatment of substrates |
| FR2985606B1 (en) * | 2012-01-11 | 2014-03-14 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A PHOTOVOLTAIC MODULE WITH TWO ETCHES OF ETCHING P2 AND P3 AND CORRESPONDING PHOTOVOLTAIC MODULE. |
| JP6955915B2 (en) * | 2016-08-03 | 2021-10-27 | パナソニック株式会社 | Solar cell module and its manufacturing method |
| US11302829B2 (en) * | 2017-03-29 | 2022-04-12 | Kaneka Corporation | Photovoltaic device and method for manufacturing photovoltaic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3712589A1 (en) * | 1987-04-14 | 1988-11-03 | Nukem Gmbh | METHOD FOR THE PRODUCTION OF SERIES LAYERED SOLAR CELLS |
| CA2267076C (en) | 1996-09-26 | 2005-01-25 | Akzo Nobel Nv | Method of manufacturing a photovoltaic foil |
| EP0948004A1 (en) | 1998-03-26 | 1999-10-06 | Akzo Nobel N.V. | Method for making a photovoltaic cell containing a dye |
| NL1013900C2 (en) | 1999-12-21 | 2001-06-25 | Akzo Nobel Nv | Method for the production of a solar cell foil with series-connected solar cells. |
| JP2001291502A (en) | 2000-04-05 | 2001-10-19 | Toyo Kohan Co Ltd | Sealed battery, sealed body and can |
| US7276658B2 (en) * | 2001-06-21 | 2007-10-02 | Akzo Nobel N.V. | Manufacturing a solar cell foil connected in series via a temporary substrate |
| US20050272175A1 (en) * | 2004-06-02 | 2005-12-08 | Johannes Meier | Laser structuring for manufacture of thin film silicon solar cells |
-
2008
- 2008-02-18 EP EP08101700A patent/EP2073269A1/en not_active Withdrawn
- 2008-12-17 CN CN2008801215770A patent/CN101952965B/en not_active Expired - Fee Related
- 2008-12-17 WO PCT/EP2008/067692 patent/WO2009080640A2/en active Application Filing
- 2008-12-17 JP JP2010538695A patent/JP4633201B1/en not_active Expired - Fee Related
- 2008-12-17 US US12/734,905 patent/US20100252089A1/en not_active Abandoned
- 2008-12-17 KR KR1020107014106A patent/KR20100102134A/en not_active Application Discontinuation
- 2008-12-19 TW TW097149946A patent/TW200939496A/en unknown
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| Publication number | Publication date |
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| CN101952965A (en) | 2011-01-19 |
| WO2009080640A2 (en) | 2009-07-02 |
| EP2073269A1 (en) | 2009-06-24 |
| WO2009080640A3 (en) | 2009-09-17 |
| KR20100102134A (en) | 2010-09-20 |
| TW200939496A (en) | 2009-09-16 |
| US20100252089A1 (en) | 2010-10-07 |
| JP4633201B1 (en) | 2011-02-23 |
| JP2011507297A (en) | 2011-03-03 |
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