CN101950677A - Method for preparing dye-sensitized solar cell - Google Patents
Method for preparing dye-sensitized solar cell Download PDFInfo
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- CN101950677A CN101950677A CN2010102931052A CN201010293105A CN101950677A CN 101950677 A CN101950677 A CN 101950677A CN 2010102931052 A CN2010102931052 A CN 2010102931052A CN 201010293105 A CN201010293105 A CN 201010293105A CN 101950677 A CN101950677 A CN 101950677A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention provides a method for preparing a dye-sensitized solar cell. The method comprises the following steps of: preparing a photo-anode conductive glass substrate printed with a silver gate electrode and a counter electrode conductive glass substrate; evaporating a transparent LaB6 layer on the silver gate electrode of the photo-anode conductive glass substrate; spraying a silane coupling agent layer on the photo-anode conductive glass substrate again; drying the silane coupling agent layer and printing a titanium dioxide thin film layer in a gap of the photo-anode silver gate electrode; sintering the photo-anode conductive glass substrate; placing the sintered photo-anode conductive glass substrate in prepared dye solution to dye-sensitize the titanium dioxide thin film layer to prepare a photo-anode; preparing an inorganic insulating layer on the counter electrode conductive glass substrate, printing a platinum electrode, and sintering the substrate to prepare a counter electrode; and finally butting the photo-anode and the counter electrode, pouring electrolyte and packaging. The method of the invention can protect the silver gate electrode from being corroded by solution of titanium tetrachloride and solution of electrolyte, so that the stability of a cell module is ensured.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly a kind of preparation method of DSSC.
Background technology
DSSC is simple because of manufacture craft, and relative low price probably becomes the leading of following solar cell.
The auxiliary electrode material of the high conductivity commonly used that is provided with on conductive substrates at present is easily by electrolyte corrosion; can guard electrode avoid electrolyte corrosion even prepared inorganic insulation layer (dielectric material commonly used) on the auxiliary electrode; but when titanium tetrachloride solution modifying titanium dioxide film layer; the insulating barrier of protection auxiliary electrode is corroded by titanium tetrachloride solution again easily, thereby causes auxiliary electrode to be corroded.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of DSSC, avoid the corrosion of titanium tetrachloride solution and electrolyte solution, thereby guarantee the stability of battery module to protect silver-colored gate electrode.
For achieving the above object, the technical solution used in the present invention is: the preparation method that a kind of DSSC is provided, it is characterized in that: be ready to be printed with the light anode conducting glass substrate of silver-colored gate electrode earlier and to the electrodes conduct glass substrate, the LaB of evaporation layer of transparent on the silver-colored gate electrode of the conducting glass substrate of light anode
6Layer, on the conducting glass substrate of light anode, spray one deck silane coupler then again, after the drying, at the gap of the silver-colored gate electrode of light anode printing titanium deoxid film layer, carry out sintering again, again the light anode conducting glass substrate after the sintering processes is put into the dye solution that configures the titanium deoxid film layer is carried out dye sensitization, make the light anode thus; Make inorganic insulation layer on to the conducting glass substrate of electrode and print platinum electrode, after carry out sintering, obtain thus electrode; At last with the light anode with electrode is docked, pours into electrolyte and encapsulate.
Further, described preparation method may further comprise the steps:
1) at the conducting glass substrate of light anode with accomplish fluently on the conducting glass substrate to electrode of encapsulated holes, respectively print one deck silver gate electrode by the method for silk screen printing, then in baking oven 150 ℃ dry 20 minutes down, transfer to again and carry out sintering in the resistance furnace, sintering temperature is 450-500 ℃, is incubated 15-30 minute;
2) conducting glass substrate of light anode is put in the e-beam evaporation chamber LaB of evaporation layer of transparent on silver-colored gate electrode
6(lanthanum hexaboride) layer;
3) on the conducting glass substrate of light anode, spraying one deck organo silane coupling agent solution, the back in baking oven 80-100 ℃ dry 10-20 minute down, back printing titanium deoxid film layer carries out sintering under 450-500 ℃, be incubated 10-25 minute;
4) will be through step 1), 2), 3) conducting glass substrate of light anode after handling puts into 40-65 ℃ of titanium tetrachloride solution immersion treatment 15-30 minute of the 40mM that configures, from solution, take out then, dry after 5 minutes with deionized water rinsing and to carry out sintering, sintering temperature is 450-500 ℃, is incubated 10-25 minute;
5) the light anode is put into ruthenium complex two (TBuA) cis-two (isothiocyanos) two (2,2 '-bipyridine-4,4 '-dicarboxylic acids) in the dye solution of ruthenium (II), make the titanium deoxid film layer carry out dye sensitization 24-72h; Make the light anode thus;
6) make by step 1) to the conducting glass substrate of electrode on printing white reflecting layer slurry, make inorganic insulation layer, after carry out sintering, sintering temperature is 530-560 ℃, is incubated 15-30 minute;
7) on the conducting glass substrate to electrode that is made by step 6), the printing platinum electrode is transferred to and is carried out sintering in the resistance furnace, and sintering temperature is 450-470 ℃, is incubated 20-30 minute; Thus the system to electrode;
What light anode that 8) step 5) is obtained and step 7) obtained carries out the figure contraposition to electrode, adopts the Surlyn film (sarin film) of 100 μ m to encapsulate at 130-160 ℃ of following hot pressing 2-5 minute, obtains the semi-finished product battery;
9) use vacuum pump from the encapsulated holes on the conducting glass substrate of electrode is carried out electrolyte perfusion, putting ultra-violet curing glue on the encapsulated holes after perfusion is finished, irradiation is 1-5 minute under uviol lamp, obtains packaged dye sensitization solar cell module.
Wherein, described conducting glass substrate is a conducting glass substrate of mixing indium tin oxide or fluorine doped tin oxide.
Described silane coupler solution is that organo silane coupling agent is diluted 100-200 doubly, and solvent is a kind of in water, the ethanol.
Described LaB
6The thickness of layer is 150-300nm.
Compared with prior art, the preparation method of DSSC provided by the invention, the LaB that preparation one deck chemical stability is good on the auxiliary electrode of light anode glass substrate, corrosion resistance is strong
6Layer is protected the auxiliary electrode on the photo-anode substrate, simultaneously LaB
6Crystal is transparent, does not influence the light transmittance of glass.The transparent LaB for preparing on the light anode
6Layer can not reduce the transmitance of light, and the utilization of titanium deoxid film layer to photon can be improved in the reflector, improves the photoelectric conversion efficiency of area battery module.To glass electrode substrate auxiliary electrode on, preparation one deck reflector is protected the auxiliary electrode on the electrode base board, simultaneously can be by light anode glass substrate LaB
6The light that layer sees through reflects and is made full use of by titanium dioxide layer, improves the photoelectric conversion efficiency of battery.Before the titanium dioxide layer preparation of light anode, in the process, on the substrate of glass of light anode, spray one deck silane coupler, improved the adhesive force of titanium deoxid film slurry and substrate of glass well, improved production efficiency and yield of products.
Description of drawings:
Fig. 1 is the cross section structure schematic diagram of DSSC of the present invention;
Wherein, the 1. conducting glass substrate of smooth anode; 2. conductive layer; 3. silver-colored gate electrode; 4.LaB
6Layer; 5. titanium deoxid film layer; 6. to the conducting glass substrate of electrode; 7. conductive layer; 8. silver-colored gate electrode; 9. inorganic insulation layer; 10. platinum electrode; 11.Surlyn film.
Embodiment:
Embodiment 1
A kind of preparation method of DSSC, the concrete preparation method of this battery may further comprise the steps:
Preparation: will beat encapsulated holes by the position of graphic designs to electrodes conduct glass substrate 6, carry out ultrasonic waves for cleaning with liquid detergent, acetone, ethanol, deionized water successively with the conducting glass substrate 1 of light anode with to the conducting glass substrate 6 of electrode then, each scavenging period is 5-20 minute, cleans the back that finishes and dries up standby with air gun.Described conducting glass substrate 1,6 is for mixing the conducting glass substrate of indium tin oxide or fluorine doped tin oxide.
Step 1: on the conducting glass substrate 1 and conducting glass substrate 6 of light anode, respectively print one deck silver gate electrode 3,8 by the method for silk screen printing according to the figure that designs to electrode.Then in baking oven 150 ℃ dry 20 minutes down, transfer to again and carry out sintering in the resistance furnace, sintering temperature is 450 ℃, is incubated 30 minutes.Treat that furnace temperature is reduced to the conducting glass substrate 1 that takes out the light anode after the room temperature and to the conducting glass substrate 6 of electrode.
Step 2: the conducting glass substrate 1 of light anode is put in the e-beam evaporation chamber, according to the LaB of the mask plate evaporation layer of transparent on silver-colored gate electrode that designs
6 Layer 4, thickness is 150nm.After finishing, takes out evaporation the conducting glass substrate 1 of light anode.
Step 3: with 100 times of organo silane coupling agent thin ups, then with the organo silane coupling agent solution spraying for preparing on the conducting glass substrate 1 of light anode, the back in baking oven 100 ℃ dry 10 minutes down.Figure according to the nano-crystalline titanium dioxide film layer that designs, silver-colored gate electrode 3 gaps printing titanium deoxid film layer 5 on light anode conducting glass substrate 1, at first print the less titanium deoxid film layer of two-layer particle diameter as absorbed layer, republish the bigger titanium deoxid film layer of one deck particle diameter as scattering layer, after every layer of printing in baking oven 100 ℃ dry 10 minutes down, transfer to then and carry out sintering in the resistance furnace, sintering temperature is 450 ℃, is incubated 25 minutes.
Step 4: 40 ℃ of titanium tetrachloride solutions that the conducting glass substrate 1 of the light anode after will handling through step 1 to three is put into the 40mM that now configures soaked 30 minutes, from solution, take out then, wash after 5 minutes oven dry repeatedly with deionized water and carry out sintering, sintering temperature is 450 ℃, is incubated 25 minutes.
Step 5: treat to take out after furnace temperature is reduced to room temperature, the conducting glass substrate 1 of light anode is put into ruthenium complex two (TBuA) cis-two (isothiocyano) two (2 that configures, 2 '-bipyridine-4,4 '-dicarboxylic acids) carry out dye sensitization 24h in the dye solution of ruthenium (II).So far, the light anode preparation finishes.
Step 6: on the conducting glass substrate 6 to electrode that is made by step 1), the figure according to design prints two-layer white reflecting layer slurry, makes inorganic insulation layer 9, after carry out sintering, sintering temperature is 530 ℃, is incubated 30 minutes.
Step 7: on the conducting glass substrate 6 to electrode that is made by step 6, the back is transferred to and is carried out sintering in the resistance furnace according to graphic printing one deck platinum electrode 10 of design, and sintering temperature is 470 ℃, is incubated 20 minutes.Making finishes to electrode.
Step 8: the light anode that will make and electrode docked according to figure, adopt 130 ℃ of following hot pressing of Surlyn film of 100 μ m to encapsulate in 5 minutes, obtain the semi-finished product battery.
Step 9: use vacuum pump to pour into electrolyte by encapsulated holes, putting ultra-violet curing glue on the encapsulated holes after perfusion is finished, irradiation is 1 minute under uviol lamp, obtains packaged dye sensitization solar cell module.
Embodiment 2
A kind of preparation method of DSSC, the concrete preparation method of this battery may further comprise the steps:
Preparation: identical with the preparation among the embodiment 1, no longer repeat at this.
Step 1: on the conducting glass substrate 1 and conducting glass substrate 6 of light anode, respectively print one deck silver gate electrode 3,8 by the method for silk screen printing according to the figure that designs to electrode.Then in baking oven 150 ℃ dry 20 minutes down, transfer to again and carry out sintering in the resistance furnace, sintering temperature is 500 ℃, is incubated 15 minutes.Treat that furnace temperature is reduced to the conducting glass substrate 1 that takes out the light anode after the room temperature and to the conducting glass substrate 6 of electrode.
Step 2: the conducting glass substrate 1 of light anode is put in the e-beam evaporation chamber, according to the LaB of the mask plate evaporation layer of transparent on silver-colored gate electrode that designs
6 Layer 4, thickness is 300nm.After finishing, takes out evaporation the conducting glass substrate 1 of light anode.
Step 3: with 200 times of organo silane coupling agent thin ups, then with the organo silane coupling agent solution spraying for preparing on the conducting glass substrate 1 of light anode, the back in baking oven 80 ℃ dry 20 minutes down.Figure according to the nano-crystalline titanium dioxide film layer that designs, silver-colored gate electrode 3 gaps printing titanium deoxid film layer 5 on light anode conducting glass substrate 1, at first print the less titanium deoxid film layer of two-layer particle diameter as absorbed layer, republish the bigger titanium deoxid film layer of one deck particle diameter as scattering layer, after every layer of printing in baking oven 100 ℃ dry 10 minutes down, transfer to then and carry out sintering in the resistance furnace, sintering temperature is 500 ℃, is incubated 10 minutes.
Step 4: 65 ℃ of titanium tetrachloride solutions that the conducting glass substrate 1 of the light anode after will handling through step 1 to three is put into the 40mM that now configures soaked 15 minutes, from solution, take out then, wash after 5 minutes oven dry repeatedly with deionized water and carry out sintering, sintering temperature is 500 ℃, is incubated 10 minutes.
Step 5: treat to take out after furnace temperature is reduced to room temperature, the conducting glass substrate 1 of light anode is put into ruthenium complex two (TBuA) cis-two (isothiocyano) two (2 that configures, 2 '-bipyridine-4,4 '-dicarboxylic acids) carry out dye sensitization 72h in the dye solution of ruthenium (II).So far, the light anode preparation finishes.
Step 6: on the conducting glass substrate 6 to electrode that is made by step 1), the figure according to design prints two-layer white reflecting layer slurry, makes inorganic insulation layer 9, after carry out sintering, sintering temperature is 560 ℃, is incubated 15 minutes.
Step 7: on the conducting glass substrate 6 to electrode that is made by step 6, the back is transferred to and is carried out sintering in the resistance furnace according to graphic printing one deck platinum electrode 10 of design, and sintering temperature is 450 ℃, is incubated 20 minutes.Making finishes to electrode.
Step 8: the light anode that will make and electrode docked according to figure, adopt 160 ℃ of following hot pressing of Surlyn film of 100 μ m to encapsulate in 2 minutes, obtain the semi-finished product battery.
Step 9: use vacuum pump to pour into electrolyte by encapsulated holes, putting ultra-violet curing glue on the encapsulated holes after perfusion is finished, irradiation is 5 minutes under uviol lamp, obtains packaged dye sensitization solar cell module.
Embodiment 3
A kind of preparation method of DSSC, the concrete preparation method of this battery may further comprise the steps:
Preparation: identical with the preparation among the embodiment 1, no longer repeat at this.
Step 1: on the conducting glass substrate 1 and conducting glass substrate 6 of light anode, respectively print one deck silver gate electrode 3,8 by the method for silk screen printing according to the figure that designs to electrode.Then in baking oven 150 ℃ dry 20 minutes down, transfer to again and carry out sintering in the resistance furnace, sintering temperature is 490 ℃, is incubated 20 minutes.Treat that furnace temperature is reduced to the conducting glass substrate 1 that takes out the light anode after the room temperature and to the conducting glass substrate 6 of electrode.
Step 2: the conducting glass substrate 1 of light anode is put in the e-beam evaporation chamber, according to the LaB of the mask plate evaporation layer of transparent on silver-colored gate electrode that designs
6 Layer 4, thickness is 200nm.After finishing, takes out evaporation the conducting glass substrate 1 of light anode.
Step 3: with 140 times of organo silane coupling agent thin ups, then with the organo silane coupling agent solution spraying for preparing on the conducting glass substrate 1 of light anode, the back in baking oven 90 ℃ dry 15 minutes down.Figure according to the nano-crystalline titanium dioxide film layer that designs, the gap printing titanium deoxid film layer 5 of the silver-colored gate electrode 3 on light anode conducting glass substrate 1, at first print the less titanium deoxid film layer of two-layer particle diameter as absorbed layer, republish the bigger titanium deoxid film layer of one deck particle diameter as scattering layer, after every layer of printing in baking oven 100 ℃ dry 10 minutes down, transfer to then and carry out sintering in the resistance furnace, sintering temperature is 470 ℃, is incubated 15 minutes.
Step 4: 45 ℃ of titanium tetrachloride solutions that the conducting glass substrate 1 of the light anode after will handling through step 1 to three is put into the 40mM that now configures soaked 20 minutes, from solution, take out then, wash after 5 minutes oven dry repeatedly with deionized water and carry out sintering, sintering temperature is 470 ℃, is incubated 15 minutes.
Step 5: treat to take out after furnace temperature is reduced to room temperature, the conducting glass substrate 1 of light anode is put into ruthenium complex two (TBuA) cis-two (isothiocyano) two (2 that configures, 2 '-bipyridine-4,4 '-dicarboxylic acids) carry out dye sensitization 48h in the dye solution of ruthenium (II).So far, the light anode preparation finishes.
Step 6: on the conducting glass substrate 6 to electrode that is made by step 1), the figure according to design prints two-layer white reflecting layer slurry, makes inorganic insulation layer 9, after carry out sintering, sintering temperature is 550 ℃, is incubated 20 minutes.
Step 7: on the conducting glass substrate 6 to electrode that is made by step 6, the back is transferred to and is carried out sintering in the resistance furnace according to graphic printing one deck platinum electrode 10 of design, and sintering temperature is 460 ℃, is incubated 25 minutes.Making finishes to electrode.
Step 8: the light anode that will make and electrode carried out contraposition according to figure, adopt 150 ℃ of following hot pressing of Surlyn film of 100 μ m to encapsulate in 3 minutes, obtain the semi-finished product battery.
Step 9: use vacuum pump to pour into electrolyte by encapsulated holes, putting ultra-violet curing glue on the encapsulated holes after perfusion is finished, irradiation is 3 minutes under uviol lamp, obtains packaged dye sensitization solar cell module.
The preparation method of DSSC provided by the invention, the LaB that preparation one deck chemical stability is good on the auxiliary electrode of light anode conducting glass substrate 1, corrosion resistance is strong
6Layer 4 auxiliary electrode of protecting on the photo-anode substrate 1, LaB simultaneously
6Crystal is transparent, does not influence the light transmittance of glass.The transparent LaB for preparing on the light anode
6Layer 4 can not reduce the transmitance of light, and the utilization of 5 pairs of photon of titanium deoxid film layer can be improved in the reflector, improves the photoelectric conversion efficiency of area battery module.To glass electrode substrate auxiliary electrode on, preparation one deck reflector is protected the auxiliary electrode on the electrode base board, simultaneously can be by light anode glass substrate LaB
6The light that layer sees through reflects and is made full use of by titanium dioxide layer, improves the photoelectric conversion efficiency of battery.Before the titanium dioxide layer preparation of light anode, in the process, on the substrate of glass of light anode, spray one deck silane coupler, improved the adhesive force of titanium deoxid film slurry and substrate of glass well, improved production efficiency and yield of products.
The above embodiment has only expressed embodiments of the present invention, and it describes comparatively concrete and detailed, but can not once be interpreted as limitation of the scope of the invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (5)
1. the preparation method of a DSSC, it is characterized in that: be ready to be printed with the light anode conducting glass substrate of silver-colored gate electrode earlier and to the electrodes conduct glass substrate, the LaB of evaporation layer of transparent on the silver-colored gate electrode of the conducting glass substrate of light anode
6Layer, on the conducting glass substrate of light anode, spray one deck silane coupler then again, after the drying, at the gap of the silver-colored gate electrode of light anode printing titanium deoxid film layer, carry out sintering again, again the light anode conducting glass substrate after the sintering processes is put into the dye solution that configures the titanium deoxid film layer is carried out dye sensitization, make the light anode thus; Make inorganic insulation layer on to the conducting glass substrate of electrode and print platinum electrode, after carry out sintering, obtain thus electrode; At last with the light anode with electrode is docked, pours into electrolyte and encapsulate.
2. the preparation method of DSSC as claimed in claim 1, it is characterized in that: described preparation method specifically may further comprise the steps:
1) at the conducting glass substrate of light anode with accomplish fluently on the conducting glass substrate to electrode of encapsulated holes, respectively print one deck silver gate electrode by the method for silk screen printing, then in baking oven 150 ℃ dry 20 minutes down, transfer to again and carry out sintering in the resistance furnace, sintering temperature is 450-500 ℃, is incubated 15-30 minute;
2) conducting glass substrate of light anode is put in the e-beam evaporation chamber LaB of evaporation layer of transparent on silver-colored gate electrode
6Layer;
3) on the conducting glass substrate of light anode, spraying one deck organo silane coupling agent solution, back in baking oven 80-100 ℃ dry 10-20 minute down, the back is at the gap of the silver-colored gate electrode of light anode printing titanium deoxid film layer, under 450-500 ℃, carry out sintering, be incubated 10-25 minute;
4) will be through step 1), 2), 3) conducting glass substrate of light anode after handling puts into 40-65 ℃ of titanium tetrachloride solution immersion treatment 15-30 minute of the 40mM that configures, from solution, take out then, dry after 5 minutes with deionized water rinsing and to carry out sintering, sintering temperature is 450-500 ℃, is incubated 10-25 minute;
5) the light anode is put into ruthenium complex two (TBuA) cis-two (isothiocyanos) two (2,2 '-bipyridine-4,4 '-dicarboxylic acids) in the dye solution of ruthenium (II), make the titanium deoxid film layer carry out dye sensitization 24-72h; Make the light anode thus;
6) make by step 1) to the conducting glass substrate of electrode on printing white reflecting layer slurry, make inorganic insulation layer, after carry out sintering, sintering temperature is 530-560 ℃, is incubated 15-30 minute;
7) on the conducting glass substrate to electrode that is made by step 6), the printing platinum electrode is transferred to and is carried out sintering in the resistance furnace, and sintering temperature is 450-470 ℃, is incubated 20-30 minute; Thus the system to electrode;
What light anode that 8) step 5) is obtained and step 7) obtained docks by figure electrode, adopts the Surlyn film of 100 μ m to encapsulate at 130-160 ℃ of following hot pressing 2-5 minute, obtains the semi-finished product battery;
9) use vacuum pump from the encapsulated holes on the conducting glass substrate of electrode is carried out electrolyte perfusion, putting ultra-violet curing glue on the encapsulated holes after perfusion is finished, irradiation is 1-5 minute under uviol lamp, obtains packaged dye sensitization solar cell module.
3. the preparation method of DSSC DSSC as claimed in claim 2 is characterized in that: described conducting glass substrate is a conducting glass substrate of mixing indium tin oxide or fluorine doped tin oxide.
4. the preparation method of DSSC as claimed in claim 2 is characterized in that: silane coupler solution is that organo silane coupling agent is diluted 100-200 doubly, and solvent is a kind of in water, the ethanol.
5. the preparation method of DSSC as claimed in claim 2 is characterized in that: LaB
6The thickness of layer is 150-300nm.
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| CN102568866A (en) * | 2011-12-23 | 2012-07-11 | 彩虹集团公司 | Method for packaging dye sensitized solar cell by low glass powder |
| CN104659134A (en) * | 2013-11-15 | 2015-05-27 | 现代自动车株式会社 | Method for forming conductive electrode patterns and method for manufacturing solar cells comprising the same |
| CN106847517A (en) * | 2017-03-20 | 2017-06-13 | 四川虹欧显示器件有限公司 | A kind of DSSC and its battery module, gate electrode and battery module method of manufacturing technology |
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| CN102568866A (en) * | 2011-12-23 | 2012-07-11 | 彩虹集团公司 | Method for packaging dye sensitized solar cell by low glass powder |
| CN104659134A (en) * | 2013-11-15 | 2015-05-27 | 现代自动车株式会社 | Method for forming conductive electrode patterns and method for manufacturing solar cells comprising the same |
| CN104659134B (en) * | 2013-11-15 | 2017-08-22 | 现代自动车株式会社 | The method and manufacture for forming conducting electrode patterns include the method for its solar cell |
| US9916936B2 (en) | 2013-11-15 | 2018-03-13 | Hyundai Motor Company | Method for forming conductive electrode patterns and method for manufacturing solar cells comprising the same |
| CN106847517A (en) * | 2017-03-20 | 2017-06-13 | 四川虹欧显示器件有限公司 | A kind of DSSC and its battery module, gate electrode and battery module method of manufacturing technology |
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