CN101947883A - Piezoelectric element, its manufacture method, piezo-activator, jet head and liquid-jet device - Google Patents
Piezoelectric element, its manufacture method, piezo-activator, jet head and liquid-jet device Download PDFInfo
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- CN101947883A CN101947883A CN2010102269480A CN201010226948A CN101947883A CN 101947883 A CN101947883 A CN 101947883A CN 2010102269480 A CN2010102269480 A CN 2010102269480A CN 201010226948 A CN201010226948 A CN 201010226948A CN 101947883 A CN101947883 A CN 101947883A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
The invention provides piezoelectric element, its manufacture method, piezo-activator, jet head and the liquid-jet device of the high reliability that the stress that can relax in the upper electrode concentrates.Piezoelectric element among the present invention (100) comprises substrate (10), be formed at substrate (10) top lower electrode (20), cover the piezoelectric body layer (30) of lower electrode (20) and be formed at the upper electrode (40) of piezoelectric body layer (30) top; The side (34) of piezoelectric body layer (30) has the part 1 (35) that is connected with the end face (32) of piezoelectric body layer (30) and tilts with the 1st angle (α) with respect to the end face (12) of substrate (10) and the part 2 (36) that is connected with part 1 (35) and tilts with the 2nd angle (β) with respect to the end face (12) of substrate (10); The 2nd angle (β) is littler than the 1st angle (α); Upper electrode (40) covers part 1 (35) and part 2 (36) at least.
Description
Technical field
The present invention relates to piezoelectric element and manufacture method thereof, piezo-activator, jet head and liquid-jet device.
Background technology
Piezoelectric element is to have by applying the element that voltage makes the characteristic of its change of shape, has the structure that clips piezoelectric body layer with electrode.Piezoelectric element for example is used for multiple uses such as the jet head part of ink-jet printer and/or various actuators.
The piezoelectric body layer that constitutes piezoelectric element is subjected to the influence of outside humidity, and deterioration can take place characteristic sometimes.As the method for guaranteeing the piezoelectric body layer moisture-proof, for example, propose to cover the structure (with reference to patent documentation 1) of piezoelectric body layer with upper electrode., in the structure that is disclosed in patent documentation 1, stress can concentrate near the part (for example, be formed at the part that the side of piezoelectric body layer is connected with the end face of substrate (oscillating plate) upper electrode) of upper electrode sometimes.And, the situation that exists the part of the concentrated upper electrode of stress destroyed, can't guarantee the moisture-proof of piezoelectric body layer.
[patent documentation 1] spy opens the 2005-88441 communique
Summary of the invention
One of purpose of several modes of the present invention is to provide the stress that can relax in the upper electrode concentrated high reliability piezoelectric element and manufacture method thereof.And one of purpose of several modes of the present invention is to provide piezo-activator, jet head and the liquid-jet device that comprises above-mentioned piezoelectric element.
Piezoelectric element among the present invention comprises substrate, be formed at the aforesaid base plate top lower electrode, cover the piezoelectric body layer of aforementioned lower electrode and be formed at the upper electrode of aforementioned piezoelectric body layer top; The side of aforementioned piezoelectric body layer has part 1 that is connected with the end face of aforementioned piezoelectric body layer and the part 2 that is connected with aforementioned part 1; Aforementioned part 1 tilts with the 1st angle with respect to the end face of aforesaid base plate; Aforementioned part 2 tilts with the 2nd angle with respect to the end face of aforesaid base plate; Aforementioned the 2nd angle is littler than aforementioned the 1st angle; Aforementioned upper electrode covers aforementioned part 1 and aforementioned part 2 at least.
According to piezoelectric element so, then can relax concentrating of stress in the aforementioned upper electrode, can have high reliability.
Also have, in record of the present invention, with " top " this word, for example as forming other individually defined things situations such as (hereinafter referred to as " B ") in " individually defined thing " (hereinafter referred to as " A ") " top ".In record of the present invention, under the situation routine, go up the situation that directly forms the situation of B and on A, clip other objects formation B as being included in A as this, use " top " this word.
In piezoelectric element of the present invention, can make the shape of aforementioned part 1 and aforementioned part 2 be respectively the plane.
According to piezoelectric element so, for example, be the situation of curved surface than the side of aforementioned piezoelectric body layer, can form machining accuracy height, aforementioned piezoelectric body layer that unevenness is low.
In piezoelectric element of the present invention, can form: the side of aforementioned piezoelectric body layer further has the 3rd part that is connected with aforementioned part 2; Aforementioned the 3rd part tilts with the 3rd angle with respect to the end face of aforesaid base plate; Aforementioned the 3rd angle is bigger and littler than aforementioned the 1st angle than aforementioned the 2nd angle.
According to piezoelectric element so, then can not make aforementioned piezoelectric body layer width (with the thickness direction of the aforesaid base plate length of the direction of quadrature mutually) exceed needs ground and become big, can relax concentrating of stress in the aforementioned upper electrode.
In piezoelectric element of the present invention, can form: be provided with a plurality of laminated construction that comprise aforementioned lower electrode, aforementioned piezoelectric body layer and aforementioned upper electrode; Aforementioned lower electrode is the split electrode in a plurality of aforementioned laminated construction; Aforementioned upper electrode is a common electrode in a plurality of aforementioned laminated construction.
According to piezoelectric element so, even then under, also can relax concentrating of stress in the aforementioned upper electrode with the situation of aforementioned upper electrode as common electrode, can have high reliability.
Piezoelectric element manufacture method among the present invention comprises: the operation that forms lower electrode above the substrate, cover aforementioned lower electrode ground make piezoelectric body layer carry out film forming operation, make the 1st upper electrode film forming in the operation above the aforementioned piezoelectric body layer, to aforementioned the 1st upper electrode and aforementioned piezoelectric body layer carries out patterned operation and the operation of formation the 2nd upper electrode above patterned aforementioned the 1st upper electrode and aforementioned piezoelectric body layer; Carry out in the patterned operation aforementioned, form the aforementioned piezoelectric body layer that is connected with the end face of aforementioned piezoelectric body layer and tilts with the 1st angle with respect to the end face of aforesaid base plate the side part 1 be connected with aforementioned part 1 and with respect to the end face of aforesaid base plate part 2 with the side of the aforementioned piezoelectric body layer of the 2nd angle inclination, and make aforementioned the 2nd angle littler than aforementioned the 1st angle; In the operation of aforementioned formation the 2nd upper electrode, cover aforementioned part 1 and aforementioned part 2 ground at least, form aforementioned the 2nd upper electrode.
According to manufacture method of piezoelectric element so, then can form the piezoelectric element of concentrating and having high reliability of the stress that can relax in the aforementioned upper electrode.
Piezo-activator among the present invention comprises the piezoelectric element among the present invention; Aforesaid base plate has flexibility, and deforms by the work of aforementioned piezoelectric body layer.
According to piezo-activator so, then because comprise aforementioned piezoelectric element, so can have high reliability.
Jet head among the present invention comprises the piezo-activator among the present invention and is connected with nozzle bore and balancing gate pit that the work by aforementioned piezo-activator changes volume.
According to jet head so, then because comprise aforementioned piezo-activator, so can have high reliability.
Liquid-jet device among the present invention comprises the jet head among the present invention.
According to liquid-jet device so, then because comprise aforementioned jet head, so can have high reliability.
Description of drawings
Fig. 1 is the profile of the piezoelectric element in the model utility ground expression present embodiment.
Fig. 2 is the profile of the piezoelectric element manufacturing process in the model utility ground expression present embodiment.
Fig. 3 is the profile of the piezoelectric element manufacturing process in the model utility ground expression present embodiment.
Fig. 4 is the profile of the piezoelectric element manufacturing process in the model utility ground expression present embodiment.
Fig. 5 is the profile of the piezoelectric element in the 1st variation of model utility ground expression present embodiment.
Fig. 6 is the profile of the piezoelectric element in the 2nd variation of model utility ground expression present embodiment.
Fig. 7 is the profile of the piezoelectric element in the 3rd variation of model utility ground expression present embodiment.
Fig. 8 is the profile of the piezoelectric element in the 4th variation of model utility ground expression present embodiment.
Fig. 9 is the profile of the jet head in the model utility ground expression present embodiment.
Figure 10 is the exploded perspective view of the jet head in the model utility ground expression present embodiment.
Figure 11 is the stereogram of the liquid-jet device in the model utility ground expression present embodiment.
Symbol description
10 substrates, the end face of 12 substrates, 20 lower electrodes, 30 piezoelectric body layers, the 30a piezoelectric body layer, the end face of 32 piezoelectric body layers, the side of 34 piezoelectric body layers, 35 part 1s, 36 part 2s, 38 bends, 39 connecting portions, 40 upper electrodes, 42 the 1st upper electrodes, 42a the 1st upper electrode, 44 the 2nd upper electrodes, 100 piezoelectric elements, 110 laminated construction, 200 piezoelectric elements, 237 the 3rd parts, 300 piezoelectric elements, 400 piezoelectric elements, 500 piezoelectric elements, 600 jet head, 610 nozzle plates, 612 nozzle bores, 620 balancing gate pit's substrates, 622 balancing gate pits, 624 liquid storing parts, 626 supply ports, 628 through holes, 630 housings, 700 liquid-jet devices, 710 drive divisions, 720 apparatus main bodies, 721 carriages, 722 outlets, 730 ejection head units, 731 print cartridges, 732 balladeur trains, 741 carriage motors, 742 reciprocating mechanisms, 743 are with 744 sliding framework guide shafts, 750 sheet feed sections synchronously, 751 paper feeding motors, 752 paper feeding cylinders, the driven cylinder of 752a, the 752b head roll, 760 control parts, 770 guidance panels
The specific embodiment
Below, about preferred embodiment of the present invention, the limit describes with reference to the accompanying drawing limit.
1. piezoelectric element
At first, about the piezoelectric element in the present embodiment 100, the limit describes with reference to the accompanying drawing limit.Fig. 1 is the profile of model utility ground expression piezoelectric element 100.
As being shown in Fig. 1 ground, piezoelectric element 100 comprises substrate 10, lower electrode 20, piezoelectric body layer 30, upper electrode 40.
As the material of substrate 10, for example can enumerate electric conductor, semiconductor, insulator etc., though be not particularly limited, because form lower electrode 20, so the top layer of substrate 10 is preferably insulator at the end face 12 of substrate 10.More specifically, as substrate 10, can adopt for example monocrystalline silicon substrate.And substrate 10 also can be for having the deform oscillating plate of (bending) of flexibility and the work by piezoelectric body layer 30.Under this situation, piezoelectric element 100 can work as piezo-activator, as substrate 10, for example, can adopt that lamination has silica (SiO on monocrystalline silicon
2) and zirconia (ZrO
2) substrate.
Part 1 35 is connected with the end face 32 of piezoelectric body layer 30.Part 1 35 tilts with the 1st angle [alpha] with respect to the end face 12 of substrate 10.In the example of Fig. 1, be illustrated as for convenience, part 1 35 tilts with the 1st angle [alpha] with respect to the imaginary line L1 parallel with end face 12.The 1st angle [alpha] is an acute angle, for example is 30 degree~70 degree.Part 1 35 can be smooth face (plane).
Part 2 36 is connected with part 1 35.In illustrated example, part 2 36 further is connected with the end face 12 of substrate 10.Part 2 36 is for being positioned at the side of part 1 35 lower side.Part 2 36 tilts with the 2nd angle beta with respect to the end face 12 of substrate 10.The 2nd angle beta is littler than the 1st angle [alpha], for example is 5 degree~20 degree.Part 2 36 can be smooth face (plane).
The side 34 of piezoelectric body layer 30 has the part 1 35 and the part 2 36 of different angle by the end face 12 with respect to substrate 10, can have bend 38.That is, bend 38 is positioned at the border of part 1 35 and part 2 36.The distance (thickness) of 10 end face 12 for example is 1/10 degree from the end face 32 of piezoelectric body layer 30 to the distance (thickness) of the end face 12 of substrate 10 from bend 38 to substrate.And under the distance from the end face 32 of piezoelectric body layer 30 to the end face 12 of substrate 10 was situation about 1.2 μ m, 30 side 34 for example was about 1.3 μ m with the distance of the connecting portion 39 of the end face 12 of substrate 10 from bend 38 to piezoelectric body layer.
The 1st upper electrode 42 covers the end face 32 of piezoelectric body layer 30.The material of the 1st upper electrode 42 and thickness for example can be considered with the close property of piezoelectric body layer 30, to diffusivity of piezoelectric body layer 30 etc. and select.More specifically, for example can enumerate iridium (thickness is 15nm) as the material of the 1st upper electrode 42.
The 2nd upper electrode 44 covers the 1st upper electrode 42, part 1 35 and part 2 36.In illustrated example, the 2nd upper electrode 44 also further is arranged on the end face 12 of substrate 10.The material of the 2nd upper electrode 44 and thickness for example can be considered moisture-proof (water preventing ability), electric conductivity etc. and select.More specifically, as the material of the 2nd upper electrode 44, for example can enumerate iridium (thickness is 50nm).Upper electrode 40, piezoelectric body layer 30 and lower electrode 20 can constitute laminated construction 110.
According to piezoelectric element 100, then the side 34 of piezoelectric body layer 30 can have part 1 35 and part 2 36.Part 1 35 tilts with the 1st angle [alpha] with respect to the end face 12 of substrate 10, and part 2 36 tilts with 2nd angle beta littler than the 1st angle [alpha] with respect to the end face 12 of substrate 10.And the side 34 of piezoelectric body layer 30 (part 2 36) connects with the 2nd angle beta with respect to the end face 12 of substrate 10.Therefore, for example, situation about only constituting by the part that tilts with angle [alpha] than the side, the side 34 in the piezoelectric element 100 can be connected in the end face 12 of substrate 10 with little angle beta.Thus, can relax concentrating of stress in the upper electrode 40 (the 2nd upper electrode 44).For example, under the bigger situation (subvertical situation) of the angle that is connected with the end face of substrate in the side of piezoelectric body layer, stress concentrates near the upper electrode the connecting portion (also can be described as the bight) of end face of the side that is formed at piezoelectric body layer and substrate.Promptly, in piezoelectric element 100, by having the side 34 of part 1 35 and part 2 36, can relax concentrating (more specifically of stress in the upper electrode 40, be the side 34 that is formed at piezoelectric body layer 30 with the connecting portion of the end face 12 of substrate 10 near upper electrode 40 in the concentrating of stress), can have high reliability.
And, for example, under the bigger situation of the angle that is connected with the end face of substrate in the side of piezoelectric body layer, exist upper electrode with respect to the close property of substrate and piezoelectric body layer and the situation of coverage variation.With respect to this, in piezoelectric element 100, because can reduce the angle that the side 34 of piezoelectric body layer 30 is connected with the end face 12 of substrate 10, so the close property of upper electrode 40 and coverage are improved.
And for example, situation about only being made of the part that tilts with angle beta than the side in piezoelectric element 100, can reduce the width (with the thickness direction of substrate 10 length of the direction of quadrature mutually) of piezoelectric body layer 30.That is, in piezoelectric element 100, can seek miniaturization.
According to piezoelectric element 100, then the shape of part 1 35 and part 2 36 can be the plane.For example, under the situation about constituting by curved surface in the side of piezoelectric body layer, exist the processing when making to become difficult situation, have the situation of the piezoelectric body layer that is difficult to form precision height (inhomogeneous little).Especially, the side of piezoelectric body layer is being formed the situation of curved surface by wet etching, down, than the side of piezoelectric body layer being formed the situation on plane, precision step-down sometimes by dry ecthing.Thereby, in piezoelectric element 100, can form machining accuracy height, inhomogeneous little piezoelectric body layer 30.
2. the manufacture method of piezoelectric element
Next, about the manufacture method of the piezoelectric element in the present embodiment 100, the limit describes with reference to the accompanying drawing limit.Fig. 2~Fig. 4 is the profile of the manufacturing process of the piezoelectric element 100 in the model utility ground expression present embodiment.
As be shown in Fig. 2 ground, on substrate 10, form lower electrode 20.Lower electrode 20 for example can pass through sputtering method, plating method, vacuum vapour deposition etc. and form.More specifically, on substrate 10, form conductive layer (not shown), and by this conductive layer being carried out graphically can form lower electrode 20.
As be shown in Fig. 3 ground, and cover lower electrode 20 ground, make piezoelectric body layer 30a film forming in 12 whole of the end faces of substrate 10.Piezoelectric body layer 30a for example can pass through sol-gal process, CVD (Chemical
Vapor Deposition, chemical vapour deposition (CVD)) method, MOD (Metal Organic Deposition, metal organic deposit) method, sputtering method, laser ablation method etc. form.At this, for example, be under the situation of PZT in the material of piezoelectric body layer 30a, by in oxygen atmosphere, carrying out the annealing of 700 degree degree, can make piezoelectric body layer 30a crystalization.Also have, crystalization also can be carried out after piezoelectric body layer 30a having been carried out graphically.
Next, make the 1st upper electrode 42a film forming in whole of piezoelectric body layer 30a.The 1st upper electrode 42a for example can pass through sputtering method, plating method, vacuum vapour deposition etc. and form.
Next, on the 1st upper electrode 42a, form the resist R of reservation shape.Resist R for example forms, and with respect to the end face of the 1st upper electrode 42a, has the side that tilts with angle θ.The big I of angle θ is adjusted by time for exposure and/or stoving temperature.
As be shown in Fig. 4 ground, and be mask with resist R, the 1st upper electrode 42a and piezoelectric body layer 30a are carried out etching, form the 1st upper electrode 42 and piezoelectric body layer 30.That is, the 1st upper electrode 42a and piezoelectric body layer 30a are carried out graphically.Etching for example can be by having adopted ICP (InductivelyCoupled Plasma, inductively coupled plasma) the high-density plasma device dry ecthing and carry out.In this high-density plasma device (device for dry etching), then can carry out etching well if be set at the following pressure of 1.0Pa.As being used for the 1st upper electrode 42a is carried out etched etching gas, for example, can adopt the mist of chlorine class gas and argon gas.As being used for piezoelectric body layer 30a is carried out etched etching gas, for example, can adopt the mist of chlorine class gas and fluorine type gas.As chlorine class gas, for example, can enumerate Cl
2, BCl
3Deng.As fluorine type gas, for example, can enumerate C
4F
8, CF
4Deng.Mist carries out etching to piezoelectric body layer 30a by adopting so, can form the side 34 with part 1 35 and part 2 36.Be illustrated in its reason following.
Material at piezoelectric body layer 30 is under the situation of PZT, and etchant is mainly chlorine class gas.If carry out etching by above-mentioned mist, then produce free radical in a large number by fluorine type gas, become reactive high etching.Under this situation, etching gas is difficult to supply near near the sidewall (side 34 of piezoelectric body layer 30 and/or the end face 12 of substrate 10 etc.) of structure, and the etch-rate of this part diminishes.Therefore, can infer that meeting forms the side 34 with part 1 35 and part 2 36.Also have, the size of the 1st angle [alpha] and the 2nd angle beta can be adjusted with the size of the angle θ that crosses etch quantity and/or resist R.
As be shown in Fig. 1 ground, remove resist R, and on the 1st upper electrode 40 and piezoelectric body layer 30, form the 2nd upper electrode 44.The 2nd upper electrode 44 forms, and covers part 1 35 and part 2 36.The 2nd upper electrode 44 for example forms by sputtering method, plating method, vacuum vapour deposition etc.More specifically, by carrying out graphically can forming the 2nd upper electrode 44 at whole formation conductive layer (not shown) and to this conductive layer.
By above operation, can make piezoelectric element 100.
The manufacture method of the piezoelectric element 100 in the present embodiment for example has following feature.
According to the manufacture method of piezoelectric element 100, then as above-mentioned ground, by having the side 34 of part 1 35 and part 2 36, can form the piezoelectric element 100 of the high reliability that the stress that can relax in the upper electrode 40 (the 2nd upper electrode 44) concentrates.
According to the manufacture method of piezoelectric element 100, then can cover the end face 32 of piezoelectric body layer 30 with the 1st upper electrode 42.Therefore, can protect the end face 32 of piezoelectric body layer 30 in order to avoid it is caused machining damage (damage when damage when piezoelectric body layer 30a is carried out etching and/or removal resist R etc.).Therefore, can the high piezoelectric element 100 of fabrication reliability.
3. the variation of piezoelectric element
(1) next, about the piezoelectric element 200 in the 1st variation of present embodiment, the limit describes with reference to the accompanying drawing limit.Fig. 5 is the profile of model utility ground expression piezoelectric element 200.Below, in the piezoelectric element 200 in the 1st variation of present embodiment, about have with present embodiment in the additional prosign of member of the same function of the member of formation of piezoelectric element 100, and the explanation that it is detailed is omitted.
In piezoelectric element 200, as be shown in Fig. 5 ground, the side 34 of piezoelectric body layer 30 has part 1 35, part 2 36 and then also has the 3rd part 237.
The 3rd part 237 is connected with part 2 36.In illustrated example, the 3rd part 237 also is connected with the end face 12 of substrate 10.The 3rd part 237 is for being positioned at the side of part 2 36 lower side.The 3rd part 237 tilts with the 3rd angle γ with respect to the end face 12 of substrate 10.The 3rd angle γ is bigger and littler than the 1st angle [alpha] than the 2nd angle beta.The 3rd part 237 can be smooth face (plane).Also have, in illustrated example, part 2 36 is illustrated as for convenience, and the imaginary line L2 with respect to parallel with the end face 12 of substrate 10 tilts with the 2nd angle beta.
According to piezoelectric element 200, then the side 34 of piezoelectric body layer 30 can further have the 3rd part 237 that tilts with the 3rd angle γ with respect to the end face 12 of substrate 10 except part 1 35 and part 2 36.The 3rd angle γ is the angle bigger than the 2nd angle beta.Therefore, in piezoelectric element 200,, can reduce the width (with the thickness direction of substrate 10 length of the direction of quadrature mutually) of piezoelectric body layer 30 for example than the example of piezoelectric element 100.That is, in piezoelectric element 200, can seek miniaturization.
And according to piezoelectric element 200, then the 3rd angle γ is the angle littler than the 1st angle [alpha].Therefore, than the side that only constitutes by the part that tilts with angle [alpha], in piezoelectric element 200, especially can relax concentrating of stress near the upper electrode 40 (the 2nd upper electrode 44) the connecting portion of the side 34 that is formed at piezoelectric body layer 30 and the end face 12 of substrate 10.
(2) next, about the piezoelectric element 300 in the 2nd variation of present embodiment, the limit describes with reference to the accompanying drawing limit.Fig. 6 is the profile of model utility ground expression piezoelectric element 300.Below, in the piezoelectric element 300 in the 2nd variation of present embodiment, about have with present embodiment in the additional prosign of member of member of formation said function of piezoelectric element 100, and the explanation that it is detailed is omitted.
In piezoelectric element 300, as be shown in Fig. 6 ground, lower electrode 20, piezoelectric body layer 30 and upper electrode 40 constitute laminated construction 110 (also can be described as laminated body 110), and laminated construction 110 is provided with a plurality of.Though in illustrated example, laminated construction 110 is provided with 3, its quantity is not particularly limited.More specifically, in illustrated example, a plurality of lower electrodes 20, a plurality of piezoelectric body layer 30, a plurality of the 1st upper electrode 42 and 1 the 2nd upper electrode 44 are set.The 2nd upper electrode 44 can be described as common electrode in a plurality of laminated construction 110.The 2nd upper electrode 44 also is continuous in a plurality of laminated construction 110.The 2nd upper electrode 44 cover a plurality of the 1st upper electrodes 42 separately, each layer of a plurality of piezoelectric body layer 30 and the end face 12 of substrate 10.With respect to this, lower electrode 20 is the split electrode in a plurality of laminated construction 110, separated by electricity.
According to piezoelectric element 300, even be under the situation of common electrode then with upper electrode 40 (the 2nd upper electrode 44), by having the side 34 of part 1 35 and part 2 36, also can relax concentrating of stress in the upper electrode 40, can have high reliability.
(3) next, about the piezoelectric element 400 in the 3rd variation of present embodiment, the limit describes with reference to the accompanying drawing limit.Fig. 7 is the profile of model utility ground expression piezoelectric element 400.Below, in the piezoelectric element 400 in the 3rd variation of present embodiment, about the additional prosign of member of member of formation said function with the piezoelectric element 300 in the 2nd variation with present embodiment, and the explanation that it is detailed is omitted.
In the example of piezoelectric element 300, the 2nd upper electrode 44 is 1 continuous common electrode.In piezoelectric element 400, as be shown in Fig. 7 ground, further make piezoelectric body layer 30 in a plurality of laminated construction 110, become shared piezoelectric body layer.That is, in piezoelectric element 400,20,1 piezoelectric body layer 30 of a plurality of lower electrodes, a plurality of the 1st upper electrode 42 and 1 the 2nd upper electrode 44 are set.Piezoelectric body layer 30 also is continuous in a plurality of laminated construction 110.The 2nd upper electrode 44 cover a plurality of the 1st upper electrodes 42 separately with piezoelectric body layer 30.
According to piezoelectric element 400, then the 2nd upper electrode 44 does not contact with substrate 10.Therefore, the 2nd upper electrode 44 needs only (coupling) mutually property (close property, reactivity etc.) of considering with piezoelectric body layer 30 (and the 1st upper electrode 42), can enlarge the range of choice of the 2nd upper electrode 44 materials.And, for example, have under the flexible situation of oscillating plate as substrate 10 in employing, control by residual quantity (with the thickness amount of substrate 10 contacted parts) piezoelectric body layer 30, can easily adjust resonant frequency.
(4) next, about the piezoelectric element 500 in the 4th variation of present embodiment, the limit describes with reference to the accompanying drawing limit.Fig. 8 is the profile of model utility ground expression piezoelectric element 500.Below, in the piezoelectric element 500 in the 4th variation of present embodiment, about the additional prosign of member of member of formation said function with the piezoelectric element 300 in the 2nd variation with present embodiment, and the explanation that it is detailed is omitted.
In the example of piezoelectric element 300, the 2nd upper electrode 44 is 1 continuous common electrode.In piezoelectric element 500, as be shown in Fig. 8 ground, the 2nd upper electrode 44 is provided with a plurality of corresponding to a plurality of piezoelectric body layers 30.A plurality of the 2nd upper electrodes 44 are electrically connected by wiring (not shown), can become common electrode.
In piezoelectric element 500,, in adjacent laminated construction 110, can reduce the influence (crosstalking) that the driving of a side piezoelectric body layer 30 produces the driving of the opposing party's piezoelectric body layer 30 than the example of piezoelectric element 300,400.Therefore, can access high reliability.
4. jet head
Next, about the jet head 600 that the piezoelectric element among the present invention works as piezo-activator, the limit describes with reference to the accompanying drawing limit.Fig. 9 is the profile of wanting portion of model utility ground expression jet head 600.Figure 10 is the exploded perspective view of jet head 600, illustrates on the contrary up and down with normally used state.
Balancing gate pit's substrate 620 is arranged at (under then being) on the nozzle plate 610 in the example of Figure 10.As the material of balancing gate pit's substrate 620, for example, can enumerate monocrystalline silicon etc.Divide by the space between 620 pairs of nozzle plates 610 of balancing gate pit's substrate and the substrate 10, as be shown in Figure 10 ground, the balancing gate pit 622 that liquid storing part (fluid retention portion) 624, the supply port 626 that is connected with liquid storing part 624 are set, is connected with supply port 626.Be that liquid storing part 624, supply port 626 and balancing gate pit 622 divide by nozzle plate 610, balancing gate pit's substrate 620 and substrate 10.Liquid storing part 624 can temporarily store the China ink of being supplied with by the through hole 628 that is arranged at substrate 10 from outside (for example print cartridge).China ink in the liquid storing part 624 can supply to balancing gate pit 622 by supply port 626.Balancing gate pit 622 changes volume by the distortion of substrate 10.Balancing gate pit 622 is connected with nozzle bore 612, by the volume-variation of balancing gate pit 622, from nozzle bore 612 ejection China inks.
Housing 630 can place nozzle plate 610, balancing gate pit's substrate 620 and piezoelectric element 100 as being shown in Figure 10 ground.As the material of housing 630, for example, can enumerate resin, metal etc.
According to jet head 600, then can be as have the high piezoelectric element of reliability 100 above-mentionedly.Thus, can access the high jet head of reliability 600.
Also have, in above-mentioned example, be illustrated for the situation of ink jet recording head about jet head 600.But jet head of the present invention for example also can be with the look material shower nozzle of the colour filter manufacturing that acts on LCD etc., be used for electrode material shower nozzle that the electrode of OLED display, FED (face active display) etc. forms, be used for organism organic matter shower nozzle that biochip makes etc.
5. liquid-jet device
Next, about the liquid-jet device in the present embodiment, the limit describes with reference to the accompanying drawing limit.Figure 11 is the stereogram of the liquid-jet device 700 in the model utility ground expression present embodiment.Liquid-jet device 700 has the jet head among the present invention.Following, describe for the situation of ink-jet printer about liquid-jet device 700.
Liquid-jet device 700 comprises ejection head unit 730, drive division 710 and control part 760 as being shown in Figure 11 ground.And liquid-jet device 700 can comprise apparatus main body 720, sheet feed section 750, carriage 721 that paper used for recording P is provided with, discharge the outlet 722 of paper used for recording P and be disposed at the guidance panel 770 of apparatus main body 720 end faces.
According to liquid-jet device 700, then can be as have the high jet head of reliability 600 above-mentionedly.Thus, can access the high liquid-jet device of reliability 700.
Also have, though in above-mentioned example, for the situation of ink-jet printer is illustrated, liquid-jet device of the present invention also can be used as industrial liquid-jet device about liquid-jet device 700.As the liquid (liquid material) that is sprayed under this situation, can adopt by solvent and/or dispersant and various functional materials are adjusted into liquid of suitable viscosity etc.
Also have, above-mentioned embodiment and variation are an example, are not to be defined in these modes.For example, also can make each embodiment and each variation appropriate combination.
As above-mentioned ground, though at length be illustrated about embodiments of the present invention, the technical staff can easily understand: the various deformation that can not break away from novel item of the present invention and effect in fact.Thereby so variation all is included in the scope of the present invention.
Claims (8)
1. a piezoelectric element is characterized in that, comprising:
Substrate,
Be formed at the lower electrode of aforesaid base plate top,
Cover aforementioned lower electrode piezoelectric body layer and
Be formed at the upper electrode of aforementioned piezoelectric body layer top;
The side of aforementioned piezoelectric body layer has part 1 that is connected with the end face of aforementioned piezoelectric body layer and the part 2 that is connected with aforementioned part 1;
Aforementioned part 1 tilts with the 1st angle with respect to the end face of aforesaid base plate;
Aforementioned part 2 tilts with the 2nd angle with respect to the end face of aforesaid base plate;
Aforementioned the 2nd angle is littler than aforementioned the 1st angle;
Aforementioned upper electrode covers aforementioned part 1 and aforementioned part 2 at least.
2. piezoelectric element according to claim 1 is characterized in that:
The shape of aforementioned part 1 and aforementioned part 2 is respectively the plane.
3. piezoelectric element according to claim 1 and 2 is characterized in that:
The side of aforementioned piezoelectric body layer also has the 3rd part that is connected with aforementioned part 2;
Aforementioned the 3rd part tilts with the 3rd angle with respect to the end face of aforesaid base plate;
Aforementioned the 3rd angle is bigger and littler than aforementioned the 1st angle than aforementioned the 2nd angle.
4. according to any one the described piezoelectric element in the claim 1~3, it is characterized in that:
Be provided with a plurality of laminated construction that comprise aforementioned lower electrode, aforementioned piezoelectric body layer and aforementioned upper electrode;
Aforementioned lower electrode is the split electrode in a plurality of aforementioned laminated construction;
Aforementioned upper electrode is a common electrode in a plurality of aforementioned laminated construction.
5. the manufacture method of a piezoelectric element is characterized in that comprising following operation:
Above substrate, form the operation of lower electrode,
Make piezoelectric body layer carry out the operation of film forming in the mode that covers aforementioned lower electrode,
Make the operation of the 1st upper electrode film forming in aforementioned piezoelectric body layer top,
Aforementioned the 1st upper electrode and aforementioned piezoelectric body layer are carried out patterned operation; With
Above patterned aforementioned the 1st upper electrode and aforementioned piezoelectric body layer, form the operation of the 2nd upper electrode;
Carry out in the patterned operation aforementioned, form the aforementioned piezoelectric body layer that is connected with the end face of aforementioned piezoelectric body layer and tilts with the 1st angle with respect to the end face of aforesaid base plate the side part 1 be connected with aforementioned part 1 and with respect to the end face of aforesaid base plate part 2 with the side of the aforementioned piezoelectric body layer of the 2nd angle inclination, and make aforementioned the 2nd angle littler than aforementioned the 1st angle;
In the operation of aforementioned formation the 2nd upper electrode,, form aforementioned the 2nd upper electrode to cover the mode of aforementioned part 1 and aforementioned part 2 at least.
6. piezo-activator is characterized in that:
Comprise any one the described piezoelectric element in the claim 1~4;
Aforesaid base plate has flexibility, and deforms by the work of aforementioned piezoelectric body layer.
7. a jet head is characterized in that, comprising:
The described piezo-activator of claim 6 and
The balancing gate pit, it is connected with nozzle bore, and by the work of aforementioned piezo-activator volume is changed.
8. a liquid-jet device is characterized in that, comprising:
The described jet head of claim 7.
Applications Claiming Priority (2)
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JP2009161560A JP2011018723A (en) | 2009-07-08 | 2009-07-08 | Piezoelectric element, method for manufacturing the same, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus |
JP161560/2009 | 2009-07-08 |
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CN101947883A true CN101947883A (en) | 2011-01-19 |
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CN2010102269480A Pending CN101947883A (en) | 2009-07-08 | 2010-07-08 | Piezoelectric element, its manufacture method, piezo-activator, jet head and liquid-jet device |
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US (1) | US8342660B2 (en) |
JP (1) | JP2011018723A (en) |
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CN106142841A (en) * | 2015-03-27 | 2016-11-23 | 兄弟工业株式会社 | Piezoelectric actuator and record head |
CN110439781A (en) * | 2018-05-03 | 2019-11-12 | 复盛精密工业股份有限公司 | The hardened structure of storage gas with sunk type |
CN113272769A (en) * | 2019-01-24 | 2021-08-17 | 宝马股份公司 | Module for a display and/or operating device, method for producing a module, and sport tool |
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JP5556514B2 (en) * | 2010-09-06 | 2014-07-23 | 日立金属株式会社 | Method for manufacturing piezoelectric thin film wafer, piezoelectric thin film element, and piezoelectric thin film device |
JP5743069B2 (en) * | 2011-03-15 | 2015-07-01 | セイコーエプソン株式会社 | Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus |
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JP6432729B2 (en) | 2014-10-02 | 2018-12-05 | セイコーエプソン株式会社 | Liquid ejecting head, liquid ejecting apparatus, and piezoelectric device |
JP5871146B2 (en) * | 2014-11-06 | 2016-03-01 | セイコーエプソン株式会社 | Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus |
US10396755B2 (en) * | 2016-02-17 | 2019-08-27 | Samsung Electro-Mechanics Co., Ltd. | Resonator having frame and method of manufacturing the same |
JP6981000B2 (en) | 2016-12-02 | 2021-12-15 | セイコーエプソン株式会社 | Liquid injection heads, liquid injection devices and piezoelectric devices |
JP2018157125A (en) * | 2017-03-21 | 2018-10-04 | セイコーエプソン株式会社 | Piezoelectric element, ultrasonic sensor, discharge head, ultrasonic device, liquid discharge device and manufacturing method of piezoelectric element |
US11289641B2 (en) | 2018-09-19 | 2022-03-29 | Sae Magnetics (H.K.) Ltd. | Thin-film piezoelectric-material element, method of manufacturing the same, head gimbal assembly and hard disk drive |
DE102020210117A1 (en) | 2020-08-11 | 2022-02-17 | Robert Bosch Gesellschaft mit beschränkter Haftung | Piezo device and method for structuring at least one piezo element, in particular a piezo device |
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Also Published As
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US20110007114A1 (en) | 2011-01-13 |
US8342660B2 (en) | 2013-01-01 |
JP2011018723A (en) | 2011-01-27 |
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