CN101943858B - Compositions comprising sulfonamide material and processes for photolithography - Google Patents

Compositions comprising sulfonamide material and processes for photolithography Download PDF

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Publication number
CN101943858B
CN101943858B CN200910249085.6A CN200910249085A CN101943858B CN 101943858 B CN101943858 B CN 101943858B CN 200910249085 A CN200910249085 A CN 200910249085A CN 101943858 B CN101943858 B CN 101943858B
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photoresist
acid
resin
group
sulfonamide
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CN101943858A (en
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D·王
C·吴
G·G·巴克雷
C·-B·徐
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Rohm and Haas Electronic Materials LLC
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Rohm and Haas Electronic Materials LLC
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Description

Contain the composition of sulfonamide material and the method for offset printing
The present invention relates to be specially adapted to the novel photoetching compositions of submergence lithographic process.On the one hand, the preferred photoetching compositions of the present invention contains one or more materials containing sulfonamide.Preferably, described one or more do not dissolve each other substantially containing the material of sulfonamide and the independent resin Composition of photoresist.Particularly preferred photoresist of the present invention can show the defect of reduction while development with alkaline aqueous solution.
Photoresist be for by image transfer to the photosensitive film on base material.On base material, form photoresist coating, then photoresist layer by photomask exposure under activating radiation source.Photomask has to the opaque region of activating radiation with to other transparent region of activating radiation.Be exposed to activating radiation and make photoresist coating that photic chemical change occur, thereby on the base material that the pattern transfer of photomask is applied to photoresist.After exposure, photoresist is developed, obtain carrying out base material the camegraph of selectivity processing.Referring to U.S. Patent Application Publication 2006/0246373.
The development of semi-conductor industry is promoted by Moore law, and this law claims that the complicacy of IC equipment on average every two years doubles.This requirement has more pattern and the structure of small-feature-size with planography way transfer printing.
Although existing photoresist is applicable to many purposes, existing photoresist still demonstrates significant defect, particularly in performance application, for example, is less than 1/4th microns and be less than in the application such as high resolving power formation of 1/10th microns of features.
We provide new photoetching compositions and method now.Photoetching compositions comprises the material that contains one or more sulfoamidos.
Preferred photoetching compositions can comprise the material of one or more sulfoamidos that contain optional replacement, and described sulfoamido comprises (X) NR ' of for example RS (=O) 2group, wherein R is non-hydrogen substituting group, particularly-OH is (with provide-SO 3h), the optional C replacing 1-20for example halogen of alkyl and electron-withdrawing group (particularly fluorine) or haloalkyl are if fluoro-alkyl is (as F 3c-).At (X) NR ' of described formula RS (=O) 2in, X is interval base (as the chain of chemical bond or 1-8 carbon), and each R ' represents hydrogen or non-hydrogen substituting group independently, for example, comprise the C of the optional replacement of the above-mentioned group to R definition 1-20alkyl.
Should be appreciated that " sulfoamido " that relate to is including following two types: the sulphonyl (SO in sulfoamido herein 2) partly directly (suc as formula (X) NR ' of RS (=O) 2in X be chemical bond) be connected to nitrogen, and sulphonyl (SO 2) part and sulfoamido part in nitrogen by 1,2,3 or more polyatom (for example carbon atom, suc as formula (X) NR ' of RS (=O) 2in X be (CH 2-) 1-3) separate.
Aspect some of invention, preferred photoetching compositions comprises and contains sulfoamido and sulphonyl (SO wherein 2) material separated by 1,2,3 or more non-nitrogen-atoms of part and the immediate nitrogen of sulfonamide part.
More particularly, the preferred photoresist of the present invention can comprise:
(i) one or more resins,
(ii) suitably contain the photolytic activity composition of one or more light acid producing agent compounds, and
(iii) one or more materials that contain sulfonamide substitutions base (such material is sometimes called " material of sulfonamide substitutions " or " sulfonamide material " or other similar term in this article).Preferably, the described material that one or more contain sulfonamide substitutions base and described one or more resins do not dissolve each other substantially.
The particularly preferred photoresist of the present invention can demonstrate the defect relevant to photoresist camegraph that formed by photoetching compositions reduction.In some aspects, the microbridge between the circuit of the photoresist camegraph of formation can be minimized or avoid.
In this article, with one or more photoresist resins substantially immiscible one or more materials can be any material with following functions, when the defect they being joined can reduce alkaline aqueous solution in photoresist and develop time.
The material (comprising the material of immiscible sulfonamide substitutions substantially) that is applicable to the sulfonamide substitutions of photoresist of the present invention comprises that those also contain the composition of silicon substituting group and/or fluoro substituents except sulfonamide substitutions base.
The further preferably material (comprising the material of immiscible sulfonamide substitutions substantially) of those sulfonamide substitutions that comprise light acid-unstable group (for example the light unsettled ester group of acid or acetal radical), described smooth acid-unstable group comprises the group that strengthens the resin Composition of photoresist for chemistry as herein described.
The material (comprising the material of immiscible sulfonamide substitutions substantially) that is preferred for the sulfonamide substitutions of photoresist of the present invention dissolves in and is used for preparing in the organic solvent that described photoetching compositions is identical.
The particularly preferred sulfonamide material for photoresist of the present invention (comprising immiscible material substantially) has surface energy and/or the less fluid dynamics volume lower than one or more resins of described photoresist resinous principle.Lower surface can be able to promote isolation or promote the migration of substantially immiscible material to top or the top of applied photoresist coating.In addition, less fluid dynamics volume can promote one or more substantially immiscible material to the effective mobility (higher coefficient of diffusion) of the upper area of applied photoresist coating, be also therefore preferred.
The sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) that is preferred for photoresist of the present invention also dissolves in (for example, as the alkaline aqueous solution of 0.26N, the tetramethyl ammonium hydroxide aqueous solution developer of 0.26N) in photoresist developer composition.Therefore, except smooth acid-unstable group discussed above, described immiscible material substantially also can comprise other group that dissolves in alkaline aqueous solution (aqueousbase-solubilizing groups), for example hydroxyl, fluoro alcohol radical (as-C (OH) (CF 3) 2), carboxyl etc.
The sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) that is applicable to photoresist of the present invention can be particle form.These particles can comprise the polymkeric substance with the polymerization of discrete particle form, i.e. separation and independently polymer beads.These polymer particles have for example, one or more different character from linearity or ladder polymer (linear or trapezoidal silicon polymer) conventionally.For example, these polymer beads can have fixing size and low molecular weight distribution.More particularly, aspect preferred, spendable number of polymers particle in photoresist of the present invention, their mean grain size (size) is about 5-3000 dust, more preferably about 5-2000 dust, more preferably from about 5-1000 dust, is more preferably about 10-500 dust, more preferably 10-50 or 200 dusts.For many purposes, the mean grain size of particularly preferred particle is less than approximately 200 or 100 dusts.
Other sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) that is applicable to photoresist of the present invention can contain Si, comprises silsesquioxane material, contains SiO 2material of group etc.Preferably immiscible material also comprises polyhedron oligomerization silsesquioxane substantially.
The preferred imaging wavelength of imprint lithography system of the present invention comprises the wavelength that is less than 300nm, such as 248nm, and is less than the wavelength of 200nm, such as 193nm.Except one or more sulfonamide materials (comprising the material of immiscible sulfonamide substitutions substantially), particularly preferred photoresist of the present invention can comprise a kind of photoactive component (for example one or more light acid producing agent compounds) and one or more resins, and described resin is selected from:
1) phenolics that contains acid-unstable group, it can provide the chemistry that is particularly suitable for imaging under 248nm to strengthen positive photoresist.The resin of particularly preferred this type comprises: i) contain the polymkeric substance of vinylphenol and alkyl acrylate polymerized unit, wherein the acrylic acid alkyl ester units of polymerization can carry out deblocking reaction under light acid exists.The example that can carry out the alkyl acrylate of the deblocking reaction of light acid induction comprises, for example tert-butyl acrylate, the methacrylate tert-butyl ester, acrylic acid methyl adamantane ester, methacrylate methyl adamantane fat, and other can carry out acrylic acid non-annularity Arrcostab and the acrylic acid cycloalkyl ester of the deblocking reaction of light acid induction, for example United States Patent (USP) 6,042,997 and 5,492, polymkeric substance described in 793, they are incorporated to herein by reference; Described those deblocking groups of the ethenylphenyl (such as styrene) of the optional replacement that ii) contains vinylphenol, not hydroxyl or carboxyl ring substituents and alkyl acrylate (for example above-mentioned polymer i)) the polymkeric substance of polymerized unit, for example United States Patent (USP) 6,042, those polymkeric substance described in 997, they are incorporated to herein by reference; And iii) contain and comprise the repetitive of the acetal that can react with light acid or ketal part and the polymkeric substance of optional aromatic series repetitive (as phenyl or phenolic group), this polymkeric substance is at United States Patent (USP) 5,929,176 and 6,090, in 526, be described, they are incorporated to herein by reference, and i) and/or ii) and/or potpourri iii).
2) not containing the phenolics of acid-unstable group, such as poly-(vinylphenol) and novolac resin (novolaks), they can be used from I line and G Lithography glue with diazo naphthoquinone Photoactive compounds one, and this is being for example described in United States Patent (USP) 4983492,5130410,5216111 and 5529880.
3) substantially or completely not containing a resin for phenyl or other aromatic group, it can provide and be particularly suitable for being less than the chemistry enhancing positive photoresist of imaging 200 nano wave lengths (as 193 nanometers) under.Particularly preferred this resinoid comprises: the polymkeric substance that i) contains the polymerized unit (as the polymerized unit of the norborene of optional replacement) of non-aromatic ring alkene (endocyclic double bond), for example, at United States Patent (USP) 5,843,624 and 6,048, polymkeric substance described in 664, they are incorporated to herein by reference; Ii) contain acrylic acid alkyl ester units, for example tert-butyl acrylate, the methacrylate tert-butyl ester, acrylic acid methyl adamantane ester, methacrylate methyl adamantane fat, and the polymkeric substance of other non-annularity alkyl and alicyclic acrylate, this polymkeric substance is at United States Patent (USP) 6,057,083, EP01008913A1 and EP00930542A1 and U.S.'s pending application application the 09/143rd are openly applied in Europe, are described in No. 462, and they are all incorporated to herein by reference; And iii) the acid anhydrides unit that contains polymerization, the particularly polymkeric substance of the maleic anhydride of polymerization and/or itaconic anhydride unit, for example, at European publication EP01008913A1 and United States Patent (USP) 6,048, described in 662, both be incorporated to by reference herein, and i) and/or ii) and/or potpourri iii).
4) resin that contains repetitive, this repetitive contains heteroatoms, particularly oxygen and/or sulphur (but be not acid anhydrides, this unit does not contain ketone annular atoms), and preferably substantially or completely containing any aromatic series unit.Preferably, this assorted alicyclic unit is fused in resin backbone, further preferably described resin contains the alicyclic unit of the carbon condensing, and what for example for example, obtain by the polymerization of norborene group and/or acid anhydrides unit (being obtained by the polymerization of maleic anhydride or itaconic anhydride) condenses unit.This resin is disclosed in PCT/US01/14914 and U. S. application the 09/567th, in No. 634.
5) siliceous substituent resin, comprises poly-(silsesquioxane) etc., and can use together with undercoat.Such resin has been disclosed in as in United States Patent (USP) 6803171.
6) resin that contains fluoro substituents (fluoropolymer), the resin for example being formed by the polymerization of tetrafluoroethene, aromatic group (as fluoro-distyryl compound), the compound that contains hexafluoro alcohol base section etc. fluoridized, the example of this resin has been disclosed in as in PCT/US99/21912.
The preferred photoresist of the present invention comprises the positivity effect of chemistry enhancing and the photoresist of negative effects.Conventionally the positive photoresist that preferred chemistry strengthens comprises the resin that one or more contain light acid-unstable group (as the light unsettled ester of acid or acetal groups).
The present invention also provides the method that uses photoresist of the present invention to form photoresist camegraph and produce electronic installation.The present invention also provides the novel product that comprises the base material that scribbles photoetching compositions of the present invention.
Other side of the present invention is disclosed below.
As mentioned above, particularly preferred photoresist of the present invention can show the defect of minimizing after alkaline aqueous solution develops.This defect comprise develop after the organic residue of minimizing in the region covering without photoresist, and the microbridge of minimizing between image photoresist circuit or further feature.
The applicable material of the photoresist of the present invention substantially not dissolving each other with photoresist resin Composition as mentioned above, can be differentiated easily by simple test.Specifically, as described herein, compare with contrast photoresist and with process identical by same way but do not exist compared with the situation of the photoresist system of immiscible candidate material substantially, preferred immiscible material substantially can provide defect still less to occur or quantity after alkaline aqueous solution develops.Assessment to defect (or there is no defect) can be undertaken by scanning electron micrograph.The detection of the photoresist material in immersion liquid can be carried out as described in the embodiment of United States Patent (USP) 200,6/0,246,373 2, and before and after comprising photoresist exposure, immersion liquid is carried out to mass spectrophotometry.In this analysis, by immersion liquid directly with the photoetching compositions layer of testing exposure period Contact approximately 60 seconds.Preferably, add one or more substantially after immiscible material, compare with not using this identical photoresist that does not substantially dissolve each other material, the photoresist material (acid again, recording by mass spectrum or organism) residuing in immersion liquid at least can reduce 10%.More preferably, with do not contain this identical photoresist that does not substantially dissolve each other material and compare, the photoresist material (acid and/or organism again) remaining in immersion liquid that described one or more materials that substantially do not dissolve each other obtain at least reduces 20%, 50%, 100%, 200%, 500% or 1000%.
By using United States Patent (USP) to disclose the analytical approach described in 2006/0246373 embodiment 2; between exposure period; preferred the present invention photoresist is leached in deionized water or other protective finish immersion liquid and reaches 60 seconds, generation is less than to 1.6X E-10 (mole/cm 2/ sec) light acid producing agent.
The preferred photoresist of the present invention can have preferred water contact angle.As described in Ben Wenben, can be according to Burnett etc. at J.Vac.Sci.Techn.B, 23 (6), the disclosed method of 2721-2727 page (in November, 2005/Dec) is measured water contact angle, for example static, retreat, advance and slide and developer Static Water contact angle.Preferred photoresist (as measuring with the spin coating of solvent (it is removed by soft baking)) has the receding angle of at least 65 °, more preferably at least 70 °.In addition, the material (as measuring with the spin coating of solvent (it is removed by soft baking)) that preferably substantially do not dissolve each other has the receding angle of at least 65 °, more preferably at least 70 °.
Particularly preferred sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) is resin and comprises high-order polymkeric substance, for example multipolymer, trimer, tetramer and pentamer.Particularly preferably be those polymkeric substance that also contain fluoro substituents except sulfonamide substitutions base.Preferred fluoro substituents comprises that full-fluorine group is as F 3c-and F 3cCF 2-, and fluoridize alcohol radical as (F 3c) 2c (OH)-.
The certain preferred sulphamide resin for photoresist of the present invention comprises following:
As mentioned above, suitable sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) comprises material.Particularly preferred sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) comprises nanostructured composition, it can commercially be buied from the company such as hydridization Plastics Company (Hybrid Plastics Fountain Valley, Califomia) and sigma/Alder Ritchie (Sigma/Aldrich) of for example California Fang Ting Valley.These materials can contain the molecule silica (molecular silica) with the Si-O core being wrapped up by organic group; Silanol; And comprise polymkeric substance and the resin of silsesquioxane cage structure compound, and can be silicones, polystyrene, acrylic resin, alicyclic, such as norborene etc.
The particle (comprising organic granular) that can be used as sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) comprises material and fluorinated material, and it has sulfonamide substitutions base.These particles can obtain commercially, or can synthesize easily, such as being reacted and synthesized by one or more monomers and crosslinking chemical and initiator compounds (if necessary).The monomer of reaction can have substituting group as required, for example fluorine, silica-based, light acid-unstable group (as the light unsettled ester group of acid or acetal radical), and other alkali solubilizing group (base-solubilizing group) is as alcohol radical etc.The embodiment 1 seeing below, it is the example by the synthetic this particle of multiple independently monomer, a kind of polymer beads for gained in described monomer provides light acid unsettled group.
Described sulfonamide material (comprising the material of immiscible sulfonamide substitutions substantially) can exist with less amount in photoetching compositions, and still can provide effective result.For example, based on the general assembly (TW) of fluid photoetching compositions, the material of described one or more sulfonamide substitutions (comprising the material of immiscible sulfonamide substitutions substantially) can exist with the amount of 0.1-20 % by weight.Suitable amount is also provided in embodiment below.
As discussed, other component of the different piece of sulfonamide material and photoresist of the present invention." replacement " substituting group can replace on one or more possible positions, particularly by for example halogen of one or more suitable groups (particularly F, Cl, Br), cyano group, C 1-8alkyl, C 1-8alkoxy, C 1-8alkylthio group, C 1-8alkyl sulphonyl, C 2-8thiazolinyl, C 2-8alkynyl, hydroxyl, nitro, isocyclic aryl (for example phenyl, naphthyl, acenaphthenyl, anthryl), alkanoyl (for example C 1-6alkanoyl is as acetyl group) etc. replace 1,2 or 3 position.
Aspect some, get rid of the photoresist that comprises the surfactant materials of fluoridizing of the present invention, wherein, the fluorine atom that this surfactant materials comprises from 30 to 60 quality %, or the fluorine atom of 20 quality % even, or until the fluorine atom of 70 quality %.
Of the present invention another specific aspect, get rid of following this photoresist: it only comprise altogether containing two independent repetitives containing sulphamide resin.In this regard, suitable photoresist comprise contain three, four, five or how independent repetitive (containing trimer, tetramer, pentamer and other high-order polymkeric substance of sulfonamide substitutions base) containing sulphamide resin.
In other side of the present invention, get rid of following this photoresist: it comprises that containing structure is (RCH=CH) C (=O) OCH (CF 3) 2polymer repeating unit containing sulphamide resin, wherein R is H or CH 3.
In other side of the present invention, get rid of following this photoresist: it comprises that containing structure is (RCH=CH) C (=O) OCH (cyclohexyl) CH 2c (OH) (CF 3) 2polymer repeating unit containing sulphamide resin, wherein R is H or CH 3.
In other side of the present invention, get rid of following this photoresist: it comprises that containing structure is-NHS (O 2) CF 3the material of sulfoamido.
As mentioned above; be preferred for the chemistry enhancing photoresist that photoresist of the present invention comprises positivity effect or negative effects; can there is the cross-linking reaction that light acid promotes; thereby the exposure area that makes the coating of photoresist is more insoluble in the negative effects photoetching compositions of developer than unexposed area; and the deprotection reaction that light acid promotes can occur the acid-unstable group of one or more composition component, thereby make the exposure area of photoresist coating more be soluble in the positivity effect photoetching compositions of water-based developer than unexposed area.The ester group that contains the acyclic tertiary alkyl carbon (as the tert-butyl group) covalently bound with the carboxyl oxygen of ester or tertiary alicyclic ring carbon (as methyl adamantane base) is normally for the preferred light acid-unstable group of the resin of photoresist of the present invention.Also preferred acetal radical light acid-unstable group.
The preferred photoresist of the present invention comprises resin Composition and photoactive component conventionally.Preferably, this resin contains the functional group that gives photoetching compositions alkaline aqueous solution visualization capabilities.For example, preferably contain the resin binder of polar functional group (for example hydroxyl or carboxylic acid ester groups).Preferably, in photoetching compositions, the consumption of resin Composition is enough to make photoresist to develop in aqueous alkali.
For imaging under the wavelength being greater than 200 nanometers (as 248 nanometers), conventionally preferred phenolics.Preferred phenolics is poly-(vinylphenol), under its prerequisite that can exist at catalyzer, is made by block copolymerization, emulsion polymerization or solution copolymerization by corresponding monomer.The vinylphenol that can be used for preparing polyvinylphenol resin can be prepared by following steps: for example make the cumarin of commercial acquisition or the hydrolysis of the cumarin of replacement, then make the hydroxycinnamic acid decarboxylation obtaining.Useful vinylphenol also can be by the dehydration of corresponding hydroxy alkyl phenol, or prepares by the decarboxylation of hydroxycinnamic acid, described hydroxycinnamic acid derive from replace or unsubstituted hydroxy benzaldehyde and malonic acid between reaction.The molecular weight ranges of the preferred polyvinylphenol resin of preparing from this vinylphenol is about 2000 to approximately 60000 dalton.
Be preferred for being greater than 200 nanometers, as 248 nanometers, wavelength under imaging the potpourri that comprises in addition photoactive component and resin Composition chemistry strengthen photoresist, described resin Composition contains the multipolymer that comprises phenol and non-phenol units.For example, a kind of preferred group of this multipolymer only has acid-unstable group, particularly alkyl acrylate light acid-unstable group, i.e. phenol-alkyl acrylate copolymer substantially, mainly or completely in the non-phenol units of multipolymer.A kind of particularly preferred copolymer adhesive has repetitive x and the y of following formula:
Wherein, oh group can be positioned at ortho position, a position or the contraposition of whole multipolymer, and R ' has 1 to about 18 carbon atoms, more preferably 1 replacement to about 6 to 8 carbon atoms or unsubstituted alkyl.The tert-butyl group is conventionally preferred R ' group.R ' group can be optionally by for example one or more halogens (particularly F, Cl or Br), C 1-8alkoxy and C 2-8the replacements such as thiazolinyl.Unit x and y can replace regularly in multipolymer, or can be randomly dispersed in polymkeric substance.These multipolymers are easy to synthesize.For example, for the resin of above formula, can be under condition of free radical known in the art 4-Vinyl phenol and replacement or unsubstituted alkyl acrylate (as tert-butyl acrylate etc.) carry out polycondensation.The ester moiety replacing, i.e. R '-O-C (=O)-, acrylic ester unit part is as the acid-unstable group of resin, and in the time that the photoresist coating that makes to contain this resin exposes, can there is light acid induction cracking in it.The Mw of preferred multipolymer is about 8,000 to 50,000, and more preferably from about 15,000 to 30,000, molecular weight distribution is for being approximately equal to or less than 3, and more preferably molecular weight distribution is for being approximately equal to or less than 2.Non-phenolics, the multipolymer of for example alkyl acrylate (as tert-butyl acrylate or the methacrylate tert-butyl ester) and alicyclic vinyl cyclic compound (as vinyl norbornene alkyl or vinyl cyclohexanol compounds), also can be used as the resin binder in the present composition.This multipolymer also can be by free radical polymerization or the preparation of other known method, and its suitable Mw is approximately 8,000 to 50,000, and molecular weight distribution is approximately equal to or less than 3.
(comprise trimer and other multipolymer with lower unit: 1) styrene at the European patent application EP 0783136A2 of the european patent application 0829766A2 of Sipray Co (Shipley Company) (thering is the resin of acetal resin and ketal resin) and Sipray Co; 2) hydroxy styrenes; 3) sour unsettled group, the particularly unsettled group of alkyl acrylate acid, for example tert-butyl acrylate or the methacrylate tert-butyl ester) in disclosed other and be preferred for positivity effect chemistry of the present invention and strengthen the resin of photoresist, these resins comprise sour unsettled deblocking group.Conventionally, the resin with various acid-unstable groups is suitable, and these resins comprise ester, carbonic ester, ether, acid imide of such as acid labile etc.These light acid-unstable groups are more preferably the side group being connected on main polymer chain, but also can use acid-unstable group to be combined in the resin in main polymer chain.
As mentioned above, for imaging under the wavelength being less than 200 nanometers (as 193 nanometers), preferably use and comprise the photoresist that one or more do not contain the polymkeric substance of phenyl or other aryl substantially, mainly or completely.For example, for the imaging that is less than 200 nanometers, in preferred photoresist polymkeric substance, the content of aryl is approximately less than 5 % by mole, more preferably about being less than 1 or 2 % by mole, is more preferably from about less than 0.1,0.02,0.04 and 0.08 % by mole, is more preferably from about less than 0.01 % by mole.Particularly preferred polymkeric substance is not completely containing aryl.Aryl is high absorption to being less than the radiation of 200 nanometers, and therefore in the photoresist for imaging under this short wavelength radiation, polymkeric substance used is disadvantageous.
In the European application EP930542A1 of Sipray Co and United States Patent (USP) 6692888 and 6680159, disclose some suitable polymkeric substance, these polymkeric substance do not contain aryl substantially or completely, and can be formulated together with PAG of the present invention, to be provided for the photoresist of imaging under the wavelength that is less than 200 nanometers.
Substantially or completely should not comprise following component containing the suitable polymkeric substance of aryl: acrylic ester unit (for example unsettled acrylic ester unit of light acid), it can make by the polymerization of acrylic acid methyl adamantane ester, methyl methacrylate base diamantane ester, acrylic acid ethyl fenchyl ester, methacrylic acid ethyl fenchyl ester etc.; The non-aromatic alicyclic group condensing, for example, can make by norbornene compound or other alicyclic compound polymerization that comprises (endocyclic) carbon-to-carbon double bond in ring; Acid anhydrides, for example, can make by the polymerization of maleic anhydride and/or itaconic anhydride; Etc..
The preferred negative effects composition of the present invention comprises one or more material (for example crosslinking chemical component, as the amido material of melamine resin) and the photoactive component of the present invention that can solidify in the time of contact acid, be cross-linked or harden.Particularly preferred negative effects composition comprises resin binder (as phenolics), crosslinking chemical component and photoactive component of the present invention.Thackeray etc. european patent application 0164248 and 0232972 and United States Patent (USP) 5128232 in disclosed such composition and application thereof.The phenolics that is preferably used as resin binder component comprises novolac resin (novolaks) and for example poly-(vinylphenol) mentioned above.Preferred crosslinking chemical comprises amido material, and it comprises melamine, glycoluril, benzoguanamine sill and urea groups material.Conventionally melamine formaldehyde resin most preferably.These crosslinking chemicals can obtain commercially, for example, purchased from the commodity Cymel300 by name of U.S. Cytec, 301 and 303 melamine resin.Be called the glycoluril resin of Cymel 1170,1171,1172 purchased from the commodity of U.S. Cytec, the urea groups resin of the commodity of buying Beetle 60,65 and 80 by name, and the benzoguanamine resin of the commodity of buying Cymel 1123 and 1125 by name.
Sipray Co has disclosed and has been used in the preferred negative effects photoresist that is less than imaging under 200 nanometers (as in 193 nanometers) wavelength in WO03077029.
Photoresist of the present invention also can comprise other material.For example, other optional adjuvant comprise photochemical dyestuff and contrast dye, anti-become line agent, plastifier, rate accelerating material, sensitizer (as under the longer wavelength at I line (i.e. 365 nanometers) or G line wavelength and so on for PAG of the present invention) etc.The concentration of these optional adjuvants in photoetching compositions is conventionally less, but except filler and dyestuff, their concentration is conventionally higher, for example, account for the 5-30 % by weight of the dry component general assembly (TW) of photoresist.
The preferred optional additives of photoresist of the present invention is a kind of alkali of interpolation, and as caprolactam, it can improve the resolution of the photoresist stereo-picture of development.Suitably using the alkali of interpolation with less amount, for example, be about 1-10 % by weight with respect to PAG, is 1 to about 5 % by weight more usually.Other applicable alkalinity additive comprises sulfonic acid ammonium salt, for example p-toluenesulfonic acid piperidines and p-toluenesulfonic acid dicyclohexyl ammonium; Alkyl amine, for example tripropyl amine (TPA) and lauryl amine; Arylamine, such as diphenylamine, triphenylamine, amino-phenol, 2-(4-aminophenyl)-2-(4-hydroxy phenyl) propane etc.
The consumption of the resin Composition of photoresist of the present invention is conventionally enough to the coating of the exposure that makes photoresist and can be developed by for example aqueous alkali.More particularly, resin binder can suitably account for this photoresist total solid 50 to about 90 % by weight.The content of photoactive component should be enough to produce sub-image in the coating of photoresist.More particularly, photoactive component should suitably account for about 1-40 % by weight of photoresist total solid.Conventionally the photoresist that, chemistry strengthens should comprise the photoactive component of small amount.
Photoetching compositions of the present invention also comprises light acid producing agent (i.e. " PAG "), and its consumption is enough to, exposing to the sun while penetrating under activating radiation, in the coating of photoresist, produce sub-image.Preferred for example, for comprising acid imide sulphonic acid ester at the PAG of 193 nanometers and 248 nanometer imagings, the compound of following formula:
Wherein R is that camphor, diamantane, alkyl are (as C 1-12alkyl) and perfluoroalkyl, for example perfluor (C 1-12alkyl), particularly Perfluorooctane sulfonates ester, Perfluorononane sulphonic acid ester etc.Particularly preferred PAG is N-[(PFO sulfonyl) oxygen base]-5-norborene-2,3-dicarboximide.
Sulfonate/ester compounds, particularly sulfonate are also suitable PAG.Two kinds are applicable at the reagent of 193 nanometers and 248 nanometer imagings is following PAG1 and 2:
These sulfonate compounds can be according to the disclosed method preparation of european patent application No. 96118111.2 (publication number 0783136), and the method is described the synthetic of PAG1 above in detail.
With two kinds of iodine compounds above of negative ion complexing except above-mentioned camphorsulfonic acid root be also suitable.Specifically, preferred negative ion comprises that those chemical formulas are RSO 3-negative ion, wherein R is that diamantane, alkyl are (as C 1-12alkyl) and perfluoroalkyl, for example perfluor (C 1-12alkyl), particularly Perfluorooctane sulfonates ester, perfluorinated butane sulphonic acid ester etc.
Other known PAG also can be used for photoresist of the present invention.Particularly, for 193 nanometer imagings, preferably not containing the PAG of aryl, for example acid imide sulphonic acid ester above-mentioned, to enhance the transparency conventionally.
Photoresist of the present invention also can comprise other optional material.For example, other optional adjuvant comprises the agent of anti-one-tenth line, plastifier, rate accelerating material etc.The concentration of these optional adjuvants in photoetching compositions is conventionally less, but except filler and dyestuff, their concentration is conventionally higher, for example, account for the 5-30 % by weight of the dry component general assembly (TW) of photoresist.
Photoresist of the present invention is prepared by following known method conventionally.For example, can pass through the various components dissolved of photoresist in suitable solvent, prepare photoresist of the present invention with the form of coating composition, described suitable solvent is for for example, glycol ethers, as 2-methoxy ethyl ether (diethylene glycol dimethyl ether), ethylene glycol monomethyl ether, propylene glycol monomethyl ether; Propylene glycol methyl ether acetate; Lactate, as ethyl lactate or methyl lactate, preferably ethyl lactate; Propionic ester, particularly methyl propionate, ethyl propionate and ethoxyl ethyl propionate; Ester cellosolve (Cellosolve ester), for example methyl acetic acid cellosolve (methyl Cellosolve acetate); Aromatic hydrocarbons, for example toluene or dimethylbenzene; Or ketone, as methyl ethyl ketone, cyclohexanone and 2-HEPTANONE.Taking the general assembly (TW) of photoetching compositions as benchmark, the solids content of photoresist is generally 5-35 % by weight.Also can use the potpourri of these solvents.
Can use spin coating, dip-coating, roller coat or other conventional coating technology by liquid photoresist composition paint base material.In the time carrying out spin coating, can be according to the solids content in the viscosity of concrete spin-coating equipment used, solution, spinner speed and spin coating time adjusting coating solution, to reach required film thickness.
Photoetching compositions used the present invention suitably can be applied in conventional for relating to the base material of photoresist coated technique.For example, said composition can be applied in to the silicon wafer for manufacturing microprocessor and other integrated circuit component or be coated with on the silicon wafer of silicon dioxide.Also should use aluminium-aluminum oxide base material, gallium arsenide base material, ceramic base material, quartz substrate, copper base material, glass baseplate etc.Also photoresist should be applied on anti-reflecting layer, particularly organic antireflection layer.
After having applied photoresist from the teeth outwards, can heat and it is dried except desolventizing, until photoresist coating is not clamminess.
Then in immersion lithographic system, photoresist layer (has been applied to barrier compositions layer on it, expose if any), make exposure tool (specifically for projection lens) and applied space between the base material of photoresist that to be submerged liquid occupied, described immersion liquid is water or the water that is mixed with one or more adjuvants, and described adjuvant is the cesium sulfate that for example can improve the refractive index of liquid.Preferably immersion liquid (for example water) is processed in order to avoid is produced bubble, for example water is carried out degassed, in order to avoid produce nano bubble.
In this article, " immersion exposure " or other similar nomenclature are shown in while exposure, insert liquid level (for example water or be mixed with the water of adjuvant) between the photoetching compositions layer of exposure tool and coating.
Then make photoetching compositions layer with suitable pattern exposure in radioactive radiation, according to the component of exposure tool and photoetching compositions, the exposure of described radioactive radiation can be about 1-100mJ/cm conventionally 2." photoetching compositions being exposed to can make the radiation of photoresist activation " as herein described represents that this radiation can be for example for example, by causing the reaction (generating light acid by light acid producing agent compound) of photoactive component, thereby in photoresist, forms sub-image.
As mentioned above, preferably with short wave length exposure, photoetching compositions is carried out to photoactivation, particularly lower than 400 nanometers, lower than 300 nanometers, lower than the exposure wavelength of 200 nanometers, particularly preferably I line (365 nanometer), 248 nanometers and 193 nanometers, and EUV and 157 nanometers.
After exposure, preferably at the temperature of approximately 160 DEG C of about 70-, cure the rete of said composition.Then preferably process this film with water base developer and develop, described developer is for example quaternary phosphonium hydroxides ammonium salt solution, for example tetraalkylammonium hydroxide solution, the preferably tetramethylammonium hydroxide of 0.26N; Various amine aqueous solutions, for example ethamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine or methyl-diethyl-amine; Hydramine, for example diethanolamine or triethanolamine; Cyclammonium, such as pyrroles, pyridine etc.Conventionally use methods known in the art to develop.
After photoresist coating on base material is developed, can optionally process substrate regions after the development covering without photoresist, for example, can carry out chemical etching or plating to the substrate regions covering without photoresist by methods known in the art.Manufacturing microelectronic substrates, for example, when manufacturing silica wafers, suitable etchant comprises gaseous etchant, and for example halogen plasma etchant, as the Cl using as plasma flow 2or CF 4/ CHF 3the chloro of etchant and so on or fluorine-based etchant.After carrying out these processing, can adopt known stripping means to remove photoresist from the base material of processing.
All documents of mentioning are herein incorporated to herein by reference.Following non-limiting example is illustrative to the present invention.All documents of mentioning are herein incorporated to herein in its full content mode by reference.
Embodiment 1: the preparation of sulphamide resin
Preparation has the sulfonamide copolymer resin of following structure by the following method:
A. monomer and initiator mixture: weigh 7.00gCH 3(CH=CH) C (=O) OCH (CH 3) CH 2c (CH 3) 2oH (the first monomer), 2.80g (CH 2=CH) C (=O) OC (CH 2) 2nHSO 2cF 3(the second monomer), 0.42g Trignox-23 (initiating agent) and 17.0g PGMEA (solvent) join in feeding bottle.
B. reactor: have the PGMEA of 30g and remain on 85 DEG C in reactor.
C. A is added to B: A is fed in B in 120 minutes with the feed rate of fixing.
D. keep temperature: A is fed to after B, the temperature of reactor is kept 2 hours at 85 DEG C again, then make temperature of reactor naturally cool to room temperature.
The sulphamide resin obtaining from reactor does not need to be further purified and can be directly used in photoetching compositions.
Embodiment 2: the preparation of other sulphamide resin
With with embodiment 1 in similar method, prepare the sulphamide resin of following formula.
Embodiment 3: the preparation of photoresist and processing
The following material of specified quantitative is mixed, prepares photoetching compositions:
1. resin Composition: the terpolymer of (methacrylic acid-2-methyl-2-diamantane ester/methacrylic acid beta-hydroxy-gamma-butyrolactone/methacrylic acid cyano group norborneol ester), taking the general assembly (TW) of photoetching compositions as benchmark, its content is 6.79 % by weight.
2. smooth acid producing agent compound: tert-butyl-phenyl tetramethylene perfluor fourth sulfonic acid sulfonium, taking the general assembly (TW) of photoetching compositions as benchmark, its content is 0.284 % by weight.
3. alkali adjuvant: N-alkyl caprolactam, taking the general assembly (TW) of photoetching compositions as benchmark, its content is 0.017 % by weight.
4. surfactant: R08 (fluorine-containing surfactant, purchased from Dainippon Ink & Chemicals, Inc.), taking the general assembly (TW) of photoetching compositions as benchmark, its content is 0.0071 % by weight.
5. substantially immiscible adjuvant: the polymkeric substance of the embodiment 1 preparing according to method described in above embodiment 1, taking the general assembly (TW) of photoetching compositions as benchmark, its content is 0.213 % by weight.
6. solvent composition: propylene glycol methyl ether acetate, accounts for 90% of fluid composition.
This photoetching compositions is spin-coated on silicon wafer, on heating in vacuum plate, is dried and removes soft board (soft-plate), then carry out liquid immersion lithography process, in this process, water-based immersion liquid directly contacts with dry photoresist layer.In this immersed systems, make photoresist layer be exposed to the radiation of figuratum 193 nanometers of tool, radiation dose is 24.1mJ/cm 2.
Then photoresist layer is carried out to post exposure bake (for example, at approximately 120 °), then develop with the alkaline developer solution of 0.26N.
In order to evaluate the leaching of the photoresist component after post exposure bake and before developing, be that light acid and light degradation accessory substance thereof in photoresist assessed this immersion liquid (leaching detection time is 60 seconds) by LC/ mass spectrum.

Claims (3)

1. a method that is used for processing photoetching compositions, comprising:
(a) on base material, apply the photoetching compositions that comprises following component:
(i) one or more resins,
(ii) photolytic activity composition, and
(iii) one or more materials that contain sulfonamide substitutions base, described in contain sulfonamide substitutions base one or more materials except containing light acid-unstable group, also contain hydroxyl ,-C (OH) (CF 3) 2or carboxyl,
One or more materials that described (iii) contains sulfonamide substitutions base and described (i) one or more resins do not dissolve each other substantially; With
(b) make photoresist layer immersion exposure in the radiation that can make this photoetching compositions activation.
2. the method for claim 1, is characterized in that, one or more materials that described (iii) contains sulfonamide substitutions base further comprise one or more electrophilic parts.
3. method as claimed in claim 1 or 2, is characterized in that, the group that one or more materials that described (iii) contains sulfonamide substitutions base contain one or more fluorin radicals or fluorine replacement.
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