CN101943721A - Method for fast measuring imprinting effect of ferroelectric film - Google Patents
Method for fast measuring imprinting effect of ferroelectric film Download PDFInfo
- Publication number
- CN101943721A CN101943721A CN2009100546861A CN200910054686A CN101943721A CN 101943721 A CN101943721 A CN 101943721A CN 2009100546861 A CN2009100546861 A CN 2009100546861A CN 200910054686 A CN200910054686 A CN 200910054686A CN 101943721 A CN101943721 A CN 101943721A
- Authority
- CN
- China
- Prior art keywords
- voltage
- pulse voltage
- ferroelectric thin
- thin film
- stamp effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention belongs to the technical field of microelectronics, and relates to a method for testing the imprinting effect of a ferroelectric film. In the method, the imprinting effect of the ferroelectric film is fast measured by measuring the polarization reversal current of the ferroelectric film; and the method comprises the following steps of: (1) applying a pulse voltage with polarity opposite to that of an imprinting voltage immediately when the pulse voltage which produces the imprinting effect is applied, and measuring the reversal current of the ferroelectric film; and (2) applying the pulse voltage with a preset polarization direction, applying the pulse voltage which has both positive polarity and negative polarity and functions in imprinting after a period of relaxation time, producing the imprinting effect after a period of time, and finally applying a voltage which has both the positive polarity and negative polarity and is exactly the same as the pulse voltage with both the positive polarity and negative polarity to measure the reversal current. The method can replace the conventional methods for obtaining Vc by measuring a ferroelectric hysteresis loop, and has the advantages of capacity of greatly shortening time required by test on the imprinting effect and vast application prospect.
Description
Technical field
The invention belongs to microelectronics technology, relate to ferroelectric thin-film technology and ferroelectric film memory spare technology, be specifically related to a kind of method of quick measurement ferroelectric thin film stamp effect.
Background technology
Ferroelectric film memory spare is a kind of non-volatility memorizer spare, it utilizes ferroelectric electricdomain two kinds of different polarization orientations in electric field to store data as logical block, have that read or write speed is fast, driving voltage is low, storage density is high and advantage such as non-volatile and become the memory device that has potentiality, in the electronic product of little power consumptions such as mobile phone, walkman, game card and digital camera, take the lead in having obtained application at present.The problem that solves the device reliability aspect is the key that ferroelectric film memory spare further develops, the stamp effect obtains extensive concern as a key content of device reliability, and the method for testing of stamp effect is extremely important for research stamp effect and device reliability test.
The stamp effect is meant that the programming pulse that ferroelectric thin film stands is unipolar, and corresponding with this polarity so ferroelectric state can be reinforced, and ferroelectric hysteresis loop follows coercive voltage Vc meeting along corresponding voltage axis direction overall offset (as shown in Figure 1).The stamp effect bring two serious problems can for ferroelectric film memory spare: the one, and the residual polarization value of a certain polarised direction is diminished cause the data retention characteristics variation; The 2nd, because changing, the coercive voltage value can cause device read-write operation voltage to change making original read-write operation voltage to lose efficacy.
There are two kinds of mechanism that add pulse to produce the stamp effect in the test of stamp effect, be respectively to add to wait for the stamp effect that different time produces after adding reverse impulse again after certain hour, a certain size stamp voltage produce the stamp effect and add prebias voltage, the method that prior art is traditional be finish apply the required pulse process of stamp effect after, survey ferroelectric hysteresis loop again, relatively apply the variation that the skew of ferroelectric hysteresis loop draws coercive voltage Vc before and after the stamp effect.There is following defective conventional test methodologies in it, introduces new stamp effect owing to add the oversize meeting of the time of test voltage.
Summary of the invention
The objective of the invention is to avoid the test duration of conventional test methodologies long, the shortcoming that degree of accuracy is low, the method that provides a kind of quick measurement ferroelectric thin film to stamp effect.
The method of quick measurement ferroelectric thin film stamp effect provided by the invention, be finish apply the required pulse process of stamp effect after, survey reverse current, calculate the value of coercive voltage Vc by reverse current.As shown in Figure 2, because what the measurement of ferroelectric hysteresis loop was used is triangular wave, triangular wave is made up of the pulse of many different height, Measuring Time is wanted more than one second at least, as long as and measure reverse current and add a potential pulse, required time only was tens nanoseconds, can measure the stamp effect more quickly, and because it is longer to measure the ferroelectric hysteresis loop required time, test process itself will cause the effect of stamping, so this method adopts the method for surveying reverse current more accurate.
The inventive method is calculated coercive voltage Vc by measuring Ferroelectric Thin-film Switching Currents, can measure the stamp effect of ferroelectric thin film fast.The pulse voltage of realization this method applies form and comprises two kinds:
(1) add a pulse voltage that produces the stamp effect after, add the pulse voltage of the voltage opposite polarity of stamping therewith at once again and measure the reverse current of ferroelectric thin film;
(2) add a pulse voltage that presets polarised direction, add a pulse voltage that plays the positive negative bipolar of imprinting after waiting for one period relaxation time, wait for a period of time again to produce the stamp effect, add at last one with the identical positive negative bipolar voltage of positive negative bipolar pulse voltage before to measure reverse current.
Among the present invention, as optional technical scheme, described stamp voltage swing is-10V to 10V, and it is 50 nanoseconds to 100 second that institute adds the time.
Among the present invention, as optional technical scheme, the pulse voltage of described survey reverse current size is-10V to 10V, institute add the time be 50 nanosecond to 10 microsecond.
Among the present invention, as optional technical scheme, the size of described preset voltage is-10V to 10V, institute add the time be 50 nanosecond to 10 microsecond.
Among the present invention, as optional technical scheme, the described relaxation time is 5 seconds to 105 seconds.
Among the present invention, as optional technical scheme, the size of the positive negative bipolar pulse voltage of described imprinting is-10V to 10V, the burst length be 50 nanosecond to 10 microsecond.
Among the present invention, as optional technical scheme, the time of generation between described two positive negative bipolar pulse voltages stamp effect is 50 nanoseconds to 100 second.
Among the present invention, as optional technical scheme, the size of the positive negative bipolar pulse voltage of described measurement reverse current is-10V to 10V, the burst length be 50 nanosecond to 10 microsecond.
Adopt method of testing provided by the invention, can significantly reduce the time of test stamp effect, can be in nanosecond order test stamp effect, and, therefore has good application prospects than classic method more accurate (conventional test methodologies is introduced new stamp effect owing to add the oversize meeting of the time of test voltage).
Description of drawings
Fig. 1 is because the ferroelectric hysteresis loop figure of skew takes place P-V (polarization intensity-voltage) ferroelectric hysteresis loop that the stamp effect causes.
Fig. 2 tests the used pulse square wave waveform synoptic diagram of test reverse current in used triangular wave waveform of ferroelectric hysteresis loop and this patent in the conventional test methodologies.
Fig. 3 be measure add certain hour, a certain size stamp voltage produces the test waveform synoptic diagram of stamp effect.
Fig. 4 is that reverse current flows through the pulse voltage time relation figure that load voltage correspondence that pull-up resistor produces makes domain reversal, and 100ns and 10s refer to the stamp added time of voltage.
Fig. 5 is coercive voltage V
CThe graph of a relation of corresponding stamp voltage application time t ,-5.2V and-2.0V represented two kinds of stamp voltages, t
0It is the time separation that the stamp effect works.
Fig. 6 is the time separation t that the stamp effect works
0Corresponding stamp voltage V
bGraph of a relation.
Fig. 7 is positive and negative coercive voltage ± V
CThe graph of a relation of stand-by period t between corresponding two positive negative bipolar pulse voltages, the oscillogram among the figure are the used pulse signal synoptic diagram of test.
Embodiment
Below divide two kinds of mechanism that add pulse signal that produce the stamp effect that specific implementation method is described, test required pulse signal and all edit with signal generator.
Can make ferroelectric thin film produce the bias voltage V of stamp effect with one of signal generator editor
b, size should satisfy | V
b|＞| V
C|, time t scope can be from the nanosecond order to the second-time.At V
bAdd a rightabout reversal voltage (V after the end at once
SW), the burst length was about for tens nanoseconds, and size should satisfy | V
SW|＞| V
b|, thereby it makes the electricdomain polarization reversal produce Switching Currents.Read the load voltage (V that reverse current produces with oscillograph at last
L=I
SW* R
L).Formula according to reverse current
Release V
C=V
SW-I
SW* R
L=V
SW-V
LThereby, obtain V
CValue.The test pulse waveform as shown in Figure 3.
Do explanation below in conjunction with instantiation, the ferroelectric capacitor sample that the present invention uses is Pt/IrO
2/ Pb (Zr
0.4Ti
0.6) O
3(PZT)/IrO
2/ Pt/Si, wherein Pt is platinum electrode, IrO
2For iridium oxide electrode, PZT are that a kind of ferroelectric material, ferroelectric thin film thickness are 140nm.
Fig. 4 is V
bUnder the=-2.8V bias voltage, it is the transient load voltage V that records behind 100ns and the 10s that voltage adds time t
L, peak value that an electric capacity charging produces appears during 8ns as we can see from the figure and after, present a more stable voltage platform, its pairing magnitude of voltage is exactly the required V of above-mentioned measurement stamp effect
LAs can also be seen from Figure, adding 100ns stamp bias voltage is different with the load voltage value that the reverse current that adds 10s stamp bias voltage produces, and the voltage platform of 10s is lower than 100ns's, and this is because the stamp effect causes coercive voltage V
CVariation causes.
That Fig. 5 represents is the coercive voltage V that is calculated by (1) formula
CCorresponding difference adds the curve of the voltage time of stamp, the stamp voltages of two corresponding two kinds of different sizes of curve among the figure (5.2V with-2.0V), from figure, can find a separation t
0, at t
0V behind the timing node
CLinear with the logarithmic coordinate of t, and at t
0V before
CVariation with t is then very little.Fig. 6 represents t
0And V
bBetween the relation, as can be seen, t
0Value is along with | V
b| increase increase.Above test result all is that same result with traditional P-V (polarization intensity-voltage) hysteresis stamp effect is consistent.
Measurement adds the stamp effect that waits for a period of time and produce behind the reverse impulse after adding prebias voltage again
To produce the stamp effect by the stamp voltage that adds a certain size and time different with the front, and test institute adds pulse waveform as shown in Figure 7, adds a positive voltage pulse V earlier
PresettingAs preset voltage, its size should satisfy | V
Presetting|＞| V
C|, the burst length was tens nanoseconds, the effect of preset voltage is to allow the electricdomain of ferroelectric thin film turn to a direction earlier.After adding preset voltage,, need to wait for one section relaxation time t in order to allow the electric charge that injects be in stable equilibrium state
Rel, time span is t
Rel=5s+20t, wherein t tests the time interval of stamping between added two the positive negative bipolar pulses of effect after being.Stopping t
RelAfter, adding the pulse voltage (positive pulse before this) of a positive negative bipolar, its size is greater than | V
C|, the burst length was about for tens nanoseconds, and its effect is to utilize negative pulse to make the electricdomain polarization reversal.After adding the pulse voltage of first positive negative bipolar, the t that waits for a period of time again is because the effect of stamp effect can cause the variation (size of variation is relevant with the length of stand-by period) of coercive voltage behind the stand-by period t.The last pulse voltage that adds an identical positive negative bipolar again, its effect are to allow the electricdomain polarization reversal produce reverse current, calculate coercive voltage (V by measuring reverse current
C=V
SW-I
SW* R
L=V
SW-V
L), V
LBe exactly that reverse current flows through pull-up resistor R
LThe voltage that produces, it can directly be read with oscillograph, because be the pulse of a positive-negative polarity here, positive pulse produces a reverse current, negative pulse can produce reverse current again one time, so can measure positive and negative coercive voltage (± V
C).
The present invention is according to the actual test of above-mentioned steps ferroelectric capacitor sample, the presetting pulse voltage swing is 6.0V as shown in Figure 7, burst length is 80ns, the size of the pulse voltage of two positive negative bipolars is 4.0V, burst length is 80ns, stand-by period t between two ambipolar pulse voltages is from 100ns to 10s, as we can see from the figure along with the increase of t, and+V
CWith-V
CValue also and then increase, this and traditional result who measures the effect of stamping with the P-V ferroelectric hysteresis loop match.
Claims (8)
1. a method of measuring ferroelectric thin film stamp effect fast is characterized in that, calculates coercive voltage Vc by measuring Ferroelectric Thin-film Switching Currents, measures ferroelectric thin film stamp effect fast; It comprises the pulse voltage applying method of following form:
(1) add a pulse voltage that produces the stamp effect after, add the pulse voltage of the voltage opposite polarity of stamping therewith at once again and measure the reverse current of ferroelectric thin film;
(2) add a pulse voltage that presets polarised direction, add a pulse voltage that plays the positive negative bipolar of imprinting after waiting for one period relaxation time, wait for a period of time again to produce the stamp effect, add at last one with the identical positive negative bipolar voltage of positive negative bipolar pulse voltage before to measure reverse current.
2. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that, in described (1), described stamp voltage swing be-10V to 10V, to add the time be 50 nanoseconds to 100 second.
3. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that, in described (1), the pulse voltage of described survey reverse current size is-10V to 10V, add the time be 50 nanosecond to 10 microsecond.
4. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that, in described (2), the size of described preset voltage be-10V to 10V, add the time be 50 nanosecond to 10 microsecond.
5. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that in described (2), the described relaxation time is 5 seconds to 105 seconds.
6. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that, in described (2), the size of the positive negative bipolar pulse voltage of described imprinting is-10V to 10V, the burst length be 50 nanosecond to 10 microsecond.
7. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that, in described (2), the time of the generation stamp effect between described two positive negative bipolar pulse voltages is 50 nanoseconds to 100 second.
8. the method for quick measurement ferroelectric thin film stamp effect according to claim 1 is characterized in that, in described (2), the size of the positive negative bipolar pulse voltage of described measurement reverse current is-10V to 10V, the burst length be 50 nanosecond to 10 microsecond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100546861A CN101943721B (en) | 2009-07-10 | 2009-07-10 | Method for fast measuring imprinting effect of ferroelectric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100546861A CN101943721B (en) | 2009-07-10 | 2009-07-10 | Method for fast measuring imprinting effect of ferroelectric film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101943721A true CN101943721A (en) | 2011-01-12 |
| CN101943721B CN101943721B (en) | 2012-07-04 |
Family
ID=43435815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100546861A Active CN101943721B (en) | 2009-07-10 | 2009-07-10 | Method for fast measuring imprinting effect of ferroelectric film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101943721B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597121A (en) * | 2016-11-21 | 2017-04-26 | 西安交通大学 | Method for representing dielectric polarization, ferroelectric phase relaxation and leakage conductance |
| CN112350612A (en) * | 2019-08-07 | 2021-02-09 | 台湾积体电路制造股份有限公司 | Method for recovering or preventing deteriorated device performance of piezoelectric device and system thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0753712B1 (en) * | 1995-07-12 | 2000-10-11 | ROLLS-ROYCE plc | A heat exchanger |
| US6466039B1 (en) * | 1999-06-24 | 2002-10-15 | Sony Corporation | Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units |
| CN100495052C (en) * | 2005-10-11 | 2009-06-03 | 中国科学院物理研究所 | Device for implementing method for detecting ferro-electric film microwave dielectric property |
| CN100516904C (en) * | 2006-03-15 | 2009-07-22 | 中国科学院上海硅酸盐研究所 | IV characteristic measuring method and device for ferroelectric thin-film materials |
-
2009
- 2009-07-10 CN CN2009100546861A patent/CN101943721B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597121A (en) * | 2016-11-21 | 2017-04-26 | 西安交通大学 | Method for representing dielectric polarization, ferroelectric phase relaxation and leakage conductance |
| CN106597121B (en) * | 2016-11-21 | 2019-04-09 | 西安交通大学 | A method of characterization dielectric polarization, ferroelectric phase relaxation and leakage are led |
| CN112350612A (en) * | 2019-08-07 | 2021-02-09 | 台湾积体电路制造股份有限公司 | Method for recovering or preventing deteriorated device performance of piezoelectric device and system thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101943721B (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Deng et al. | Examination of the interplay between polarization switching and charge trapping in ferroelectric FET | |
| US9196380B2 (en) | Method for measuring data retention characteristic of resistive random access memory device | |
| CN101718810B (en) | Method for measuring ferroelectric hysteresis loop of leakage ferroelectric film | |
| CN102831935B (en) | Pulse I-V (intravenous) characteristic testing method and device of phase change memory unit | |
| CN101943721B (en) | Method for fast measuring imprinting effect of ferroelectric film | |
| CN102279308A (en) | Method for measuring electric domain reverse current of insulated/leaky ferroelectric film and transforming electric domain reverse current into ferroelectric hysteresis loop | |
| CN101655526B (en) | Method for measuring differential capacitance of ferroelectric film by rapid voltage sweep | |
| CN105336378B (en) | Phase-change memory cell test structure and test method, phase transition storage | |
| CN103412210A (en) | Method for measuring nucleation reversible electric domain polarization intensity of ferroelectric film | |
| US6466039B1 (en) | Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units | |
| CN102116789A (en) | Ferroelectric domain movement speed-adjustable pulse voltage measurement method | |
| CN110244112A (en) | A kind of measuring device and measuring method of time domain dielectric material polarization transient state | |
| CN107818806A (en) | Semiconductor storage | |
| CN101620879A (en) | Operating method for realizing multi-bit data storage of ferroelectric memory | |
| CN102590669B (en) | Method for measuring movement speed of ferroelectric thin film electric domain area and coercive field relationship | |
| WO2023159666A1 (en) | Waveform-programmable ultra-high-speed pulse current generation apparatus | |
| CN103714863A (en) | System and method for testing distribution of current of flash memory unit | |
| CN112562777B (en) | Capacitance measuring circuit and method thereof | |
| Vlasov et al. | Anomalies and error limits in electrical-conductivity measurements in plasticized transparent poly (vinyl chloride) films | |
| Alam et al. | HfZrO ferroelectric characterization and parameterization of response to arbitrary excitation waveform | |
| Wang et al. | Test system of current pulse in phase change memory devices | |
| Suhail et al. | The First CMOS-Integrated Voltage-Controlled MRAM with 0.7 ns Switching Time | |
| EP1492123A2 (en) | Magnetic memory | |
| Tamura et al. | A new circuit simulation model of ferroelectric capacitors | |
| Larsen et al. | Pulse switching characterization of ferroelectric thin films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |