CN101935881A

CN101935881A - Novel IIB-VIA-VIIA compound semiconductor material

Info

Publication number: CN101935881A
Application number: CN2009101510246A
Authority: CN
Inventors: 陈文通
Original assignee: Individual
Current assignee: Individual
Priority date: 2009-06-30
Filing date: 2009-06-30
Publication date: 2011-01-05

Abstract

The invention provides a novel semiconductor material, which relates to a novel semiconductor material series Cd4(SeO3)2Cl4(H2O)(Q=S, Se and Te; X=Cl, Br and I). The semiconductor material is prepared by adopting a solid phase reaction method. By using CdX2 and Q powders, after approaching vacuum seal, the semiconductor material is compounded by heating reaction, and a monocrystal is prepared at the same time. The monocrystal is used for direct-current transmission and solar cells.

Description

One class novel I IB-VIA-VIIA group iii v compound semiconductor material

Technical field

The present invention relates to novel cpd semiconductor material series Cd ₄(QO ₃) ₂X ₄(H ₂O) (Q=S, Se, Te; X=Cl, Br, I).

Background technology

Semi-conductor is not only being brought into play increasing effect at computer and communication aspects, and also plays huge, irreplaceable effect in modern energy technology (as, direct-current transmission, solar cell, or the like).

Semi-conductor is mainly used in the high-power transmission of electricity of long distance in direct-current transmission, it has significant advantage: when carrying same power, its cost is low, and exchanging needs three lines, and as long as direct current is two lines, the texture ratio alternating-current of route lever simple; Power loss is little in the transmission of electricity process, and the impedance that does not have electric capacity, inductance to form has only resistance losses; Little to electromagnetic interference; Be not subjected to phase locked restriction; Or the like.Because above-mentioned advantage, direct-current transmission has obtained application more and more widely.Just adopted the transmission of electricity of 500,000 volts of direct currents as, power station, China Ge Zhou Ba to East China and Guangdong transmission of electricity, direct-current transmission is also adopted in the Yangtze River Gorges.

People have found the phenomenon of photosensitivity of selenium for a long time and have made solar cell with selenium, can produce electric current through illumination, and it is very tempting that this result feels with the sun power direct generation of electricity people.But, it is found that the photoelectric transformation efficiency that this mode is generated electricity is no more than 1% through years of researches.For improving the photoelectric transformation efficiency of the sun power direct generation of electricity, people make unremitting effort.By 1954, photoelectric transformation efficiency brought up to 10%.In March, 1958, the Vanguard-1 satellite of the U.S. is loaded onto solar cell for the first time, and moves 8 years continuously.On Fa She the artificial object, nearly all install solar cell afterwards.Solar cell is in light weight, long service life, do not need fuel feed, has won its uncontested adversary's firm status in space development.Solar cell itself also obtains very big development, and research and development is mainly round improving cell photoelectric efficiency of conversion and the decline aspect that overcomes the photoelectric properties that cause because of irradiation.

Now, except that existing silicon single-crystal solar cell, people have have also researched and developed solar cells such as polysilicon, Cadmium Sulfide, cadmium telluride, arsenicization are transferred, selenium indium copper.But still not being widely used up to present solar cell, is because its photoelectric transformation efficiency is still waiting further raising on the one hand, is because its cost of electricity-generating is too high on the other hand.For this reason, the semiconductor material that can be used for solar cell of exploitation with high photoelectric transformation efficiency and low cost of electricity-generating remains highly significant.

For making full use of sun power, improve photoelectricity and change efficient, band gap width is that the compound of 1.35eV is optimal selection.Below the photoelectricity of two kinds of compounds to change efficient higher: CuInSe ₂(CIS) it is 17% that photoelectricity changes efficient, and its band gap width is 1.04eV; It is 15.8% that the photoelectricity of CdTe (II-VI) changes efficient, and its band gap width is 1.50eV.Our work is by studying the compound of new The Nomenclature Composition and Structure of Complexes, providing new thinking for studying this class photoelectric conversion material, with the compound of synthetic band gap width near 1.35eV.

Since a recent period of time, very fast to the progress of semiconductor material, people have synthesized a lot of semiconductor materials, and these semiconductor materials have the band gap width that has nothing in common with each other.

Summary of the invention

The objective of the invention is to find a kind of band gap width to have and bigger can " cut out " semiconductor material of property.For this reason, need to select the usually synthetic new compound semiconductor of a class of suitable unit.

We have selected the element S e of VIA family, and the Cd of Elements C l of VIIA family and IIB family uses solid reaction process, synthesize novel semiconductor material Compound C d ₄(SeO ₃) ₂Cl ₄(H ₂O).Owing to have similar character with gang's element in the periodictable, therefore, can select S or Te element substitution Se, Br or I substitute the Cl element, accurately take by weighing the reactant of respective quality by the mol ratio of each reactant in the reaction formula, under certain temperature range, react for some time, can obtain homeomorphic series compound Cd ₄(QO ₃) ₂X ₄(H ₂O) (Q=S, Se, Te; X=Cl, Br, I), as Cd ₄(SO ₃) ₂Cl ₄(H ₂O), Cd ₄(SeO ₃) ₂Br ₄(H ₂O), Cd ₄(TeO ₃) ₂I ₄(H ₂O) etc.Because the difference of congeners makes the band gap width of this series semiconductor material there are differences, therefore, can obtain the semiconductor material of different band gap widths to satisfy the demand in different application field simultaneously by the component of adjusting material.

Novel semiconductor material Compound C d ₄(SeO ₃) ₂Cl ₄(H ₂O) (Q=S, Se, Te; X=Cl, Br, I) have following advantage: the preparation of this compound is simple, and reaction process is not introduced impurity, as long as use enough pure reagent, just need not purify; Can under gentle relatively condition, prepare, need not complex apparatus; Can directly obtain single crystal, need not the further growth monocrystalline.

Embodiment

Embodiment 1 is about semiconductor material Compound C d ₄(SeO ₃) ₂Cl ₄(H ₂O) synthetic and single crystal growth

Semiconductor material Compound C d ₄(SeO ₃) ₂Cl ₄(H ₂O) synthetic and single crystal growth adopts solid reaction process to finish simultaneously.

Chemical equation is: 4CdCl ₂+ 2Se+3H ₂O+2O ₂→ Cd ₄(SeO ₃) ₂Cl ₄(H ₂O)+4HCl

Used chemical reagent and manufacturer are:

CdCl ₂May﹠amp; Baker (England) purity 〉=99.95%

Se powder Sichuan semiconductor material factory purity 〉=99.999%

The charging capacity of three kinds of reagent is:

CdCl ₂4mmol?0.732g

Se powder 2mmol 0.158g

Accurately take by weighing the reactant of respective quality earlier by the mol ratio of each reactant in the reaction formula, put into mortar and grind evenly, then with ground mixture compressing tablet, in the Glass tubing of packing into.Glass tubing is extracted near vacuum uses the flame sealed glass tubes then.The Glass tubing of sealing is put into muffle furnace, use the temperature controller controlled temperature, by being warming up to 200 ℃ in the room temperature 6h, 200 ℃ of constant temperature 24 hours, be warming up to 300 ℃ again in the 6h, 300 ℃ of constant temperature 144 hours, be cooled to 100 ℃ again in the 33h, reduce to 35 ℃ again in the 5h, turn off power supply then.Take out Glass tubing from muffle furnace, open, can obtain colourless bulk crystals (productive rate＞60%), maximum can reach 1.2mm * 1.1mm * 0.8mm through single crystal structure determination, Compound C d ₄(SeO ₃) ₂Cl ₄(H ₂O) spacer is Fmmm (No.69), and its cell parameter is a=15.5165 B=17.5090

C=7.3318 α=β=γ=90 °, Z=8, unit-cell volume V=1991.9 (2)

The ultraviolet-visible spectrum test shows, Compound C d ₄(SeO ₃) ₂Cl ₄(H ₂O) energy gap is about 1.6eV.

Claims

1. novel cpd semiconductor material, it is characterized in that: the general formula of this compound semiconductor materials is Cd ₄(QO ₃) ₂X ₄(H ₂O) (Q=S, Se, Te; X=Cl, Br, I).

2. the feature of this compound semiconductor materials is: molecular formula is Cd ₄(SeO ₃) ₂Cl ₄(H ₂O), spacer is Fmmm (No.69), and its cell parameter is a=15.5165

B=17.5090

C=7.3318

α=β=γ=90 °, Z=8, unit-cell volume V=1991.9 (2)

3. this compound semiconductor materials preparation method is characterized in that: use solid reaction process, use CdX ₂, Q powder and a small amount of distilled water are near the synthetic single crystal that also prepares simultaneously of vacuum-sealing post-heating reaction.

4. the purposes of this compound semiconductor materials, it is characterized in that: this material is used for direct-current transmission.

5. the purposes of this compound semiconductor materials, it is characterized in that: this material is used for solar cell.