CN100492668C - A series of semiconductor material - Google Patents
A series of semiconductor material Download PDFInfo
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- CN100492668C CN100492668C CNB2004100443256A CN200410044325A CN100492668C CN 100492668 C CN100492668 C CN 100492668C CN B2004100443256 A CNB2004100443256 A CN B2004100443256A CN 200410044325 A CN200410044325 A CN 200410044325A CN 100492668 C CN100492668 C CN 100492668C
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Abstract
The present invention provides a series of semiconductor materials, which relates to a novel semiconductor material series CdHg5Q5X4 (Q=S, Se, Te; X= C1, Br, I) and a preparation method thereof. A spaA series of semiconductor material and preparation thereof, which refers to CdHg5Q5X4 (Q=S Se Te, X=Cl Br, I), space group is Cmm2(No35), unit cell parameter is a=16.7-17.9 b=8.8-10.0 c=9.1-10.2 alphace group of the CdHg5Q5X4 (Q=S, Se, Te; X= C1, Br, I) is Cmm 2 (No 35), and a single cell parameter is a=16.7 to 17.9*, b=8.8 to 10.0*, c=9.1 to 10.2*, alpha= beta = gamma = 90 DEG, z= 4, and the sing=beta=gamma=90 degree Z=4, unit cell volume V=1500-2000, said crystal can be used in dc electricity transmission, solar energy cell and photoelectric switch etc field. le cell volume V=1500 to 2000*<3>. The crystal is used in the fields of direct-current transmission, a solar energy cell, a photoelectric switch, etc.
Description
Technical field
The present invention relates to novel semiconductor material series CdHg
5Q
5X
4(Q=S, Se, Te; X=Cl, Br, I).
Background technology
Semiconductor is not only being brought into play increasing effect at computer and communication aspects, and also plays huge, irreplaceable effect in modern energy technology (as, direct current transportation, solar cell, or the like).
Semiconductor is mainly used in the high-power transmission of electricity of long distance in direct current transportation, it has significant advantage: when carrying same power, its cost is low, and exchanging needs three lines, and as long as direct current is two lines, and the structure of route lever is simpler than alternating current; Power loss is little in the transmission of electricity process, and the impedance that does not have electric capacity, inductance to form has only resistance loss; Little to electromagnetic interference; Be not subjected to phase locked restriction; Or the like.Because above-mentioned advantage, direct current transportation has obtained application more and more widely.Just adopted the transmission of electricity of 500,000 volts of direct currents as, power station, China Ge Zhou Ba to East China and Guangdong transmission of electricity, direct current transportation is also adopted in the Yangtze River Gorges.
People have just found the phenomenon of photosensitivity of selenium and have made solar cell with selenium that can produce electric current through illumination, it is very tempting that this result feels with the solar energy direct generation of electricity people as far back as 1873.But, it is found that the photoelectric conversion efficiency that this mode is generated electricity is no more than 1% through years of researches.For improving the photoelectric conversion efficiency of the solar energy direct generation of electricity, people make unremitting effort.By 1954, photoelectric conversion efficiency brought up to 10%.In March, 1958, the Vanguard-1 satellite of the U.S. is loaded onto solar cell for the first time, and moves 8 years continuously.On Fa She the artificial object, nearly all install solar cell afterwards.Solar cell is in light weight, long service life, do not need fuel supply, has won its uncontested adversary's firm status in space development.Solar cell itself also obtains very big development, and research and development is mainly round improving cell photoelectric conversion efficiency and the decline aspect that overcomes the photoelectric properties that cause because of irradiation.
Now, except that existing silicon single crystal solar cell, people have have also researched and developed solar cells such as polysilicon, cadmium sulfide, cadmium telluride, arsenicization are transferred, selenium indium copper.But still not being widely used up to present solar cell, is because its photoelectric conversion efficiency is still waiting further raising on the one hand, is because its cost of electricity-generating is too high on the other hand.For this reason, the semi-conducting material that can be used for solar cell of exploitation with high photoelectric conversion efficiency and low cost of electricity-generating remains highly significant.
For making full use of solar energy, improve photoelectricity and change efficient, band gap width is that the compound of 1.35eV is optimal selection.Below the photoelectricity of two kinds of compounds to change efficient higher: CuInSe
2(CIS) it is 17% that photoelectricity changes efficient, and its band gap width is 1.04eV; It is 15.8% that the photoelectricity of CdTe (II-VI) changes efficient, and its band gap width is 1.50eV.Our work is by studying the compound of new The Nomenclature Composition and Structure of Complexes, providing new thinking for studying this class photoelectric conversion material, with the compound of synthetic band gap width near 1.35eV.
Since a recent period of time, very fast to the progress of semi-conducting material, people have synthesized a lot of semi-conducting materials, and these semi-conducting materials have the band gap width that has nothing in common with each other.
Summary of the invention
The objective of the invention is to find a kind of band gap width to have and bigger can " cut out " semi-conducting material of property.For this reason, need to select the usually synthetic new compound semiconductor of a class of suitable unit.
We have selected the element S e of VIA family, and the Cd and the Hg of element B r of VIIA family and IIB family use solid reaction process, synthesize novel semiconductor material Compound C dHg
5Se
5Br
4Owing to have similar character with gang's element in the periodic table, therefore, can select S or Te element substitution Se, Cl or I substitute the Br element, accurately take by weighing the reactant of respective quality by the mol ratio of each reactant in the reaction equation, under certain temperature range, react a period of time, can obtain homeomorphic series compound CdHg
5Q
5X
4(Q=S, Se, Te; X=Cl, Br, I), as CdHg
5S
5Br
4, CdHg
5Te
5Br
4, CdHg
5Se
5Cl
4Deng.Because the difference of congeners makes the band gap width of this series semiconductor material there are differences, therefore, can obtain the semi-conducting material of different band gap widths to satisfy the demand in different application field simultaneously by the component of adjusting material.
Novel semiconductor material Compound C dHg
5Q
5X
4(Q=S, Se, Te; X=Cl, Br, I) have following advantage: the preparation of this compound is simple, and course of reaction is not introduced impurity, as long as use enough pure reagent, just need not purify; Can under gentle relatively condition, prepare, need not complex apparatus; Can directly obtain monocrystal, need not the further growth monocrystalline.
Embodiment
About semi-conducting material Compound C dHg
5Se
5Br
4Synthetic and single crystal growth:
Semi-conducting material Compound C dHg
5Se
5Br
4Synthetic and single crystal growth adopt solid reaction process to finish simultaneously.Reaction equation is:
HgBr
2+Se+Cd→CdHg
5Se
5Br
4
Used chemical reagent and manufacturer are:
HgBr
2May﹠amp; Baker (England) purity 〉=99.95%
Se powder Sichuan semi-conducting material factory purity 〉=99.999%
Cd powder Shanghai chemical reagents corporation purity 〉=99.999%
The inventory of three kinds of reagent is:
HgBr
2 0.5mmol 0.1802g
Se powder 0.7mmol 0.0553g
Cd powder 0.1mmol 0.0112g
The concrete operations step is:
Accurately take by weighing the reactant of respective quality earlier by the mol ratio of each reactant in the reaction equation, put into mortar and grind evenly, then with ground mixture compressing tablet, in the glass tube of packing into.Glass tube vacuumized use the flame sealed glass tubes then.The glass tube of sealing is put into muffle furnace, control temperature, by being warming up to 200 ℃ in the room temperature 4h,, be warming up to 300 ℃ again in the 5h,, reduce to room temperature in the 48h again, turn off power supply then 300 ℃ of constant temperature 144 hours 200 ℃ of constant temperature 12 hours with temperature controller.Take out glass tube from muffle furnace, open, can obtain yellow bulk crystals, maximum can reach 1.2mm * 1.0mm * 0.6mm.
Through single crystal structure determination, Compound C dHg
5Se
5Br
4Space group be Cmm2 (No35). cell parameter is
α=β=γ=90 °, Z=4, unit-cell volume
Ultraviolet-visible spectrum test shows, Compound C dHg
5Se
5Br
4Energy gap be about 1.63eV.
This semi-conducting material is used for direct current transportation, also can be used for solar cell and is used for optoelectronic switch.
Claims (5)
1. a series of semi-conducting materials is characterized in that: the molecular formula of this semi-conducting material is CdHg
5Q
5X
4, Q=S wherein, Se, Te; X=Cl, Br, I, space group is Cmm2 (No35), cell parameter is
α=β=γ=90 °, Z=4, unit-cell volume
2. the preparation method of the semi-conducting material of a claim 1 is characterized in that: use solid reaction process, use HgX
2, the Q powder, simple substance Cd adds the synthetic monocrystal that also prepares simultaneously of thermal response after the vacuum seal.
3. the purposes of the semi-conducting material of a claim 1, it is characterized in that: this semi-conducting material is used for direct current transportation.
4. the purposes of the described semi-conducting material of claim 1, it is characterized in that: this semi-conducting material is used for solar cell.
5. the purposes of the described semi-conducting material of claim 1, it is characterized in that: this semi-conducting material is used for optoelectronic switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100443256A CN100492668C (en) | 2004-05-25 | 2004-05-25 | A series of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100443256A CN100492668C (en) | 2004-05-25 | 2004-05-25 | A series of semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1705139A CN1705139A (en) | 2005-12-07 |
| CN100492668C true CN100492668C (en) | 2009-05-27 |
Family
ID=35577520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100443256A Expired - Fee Related CN100492668C (en) | 2004-05-25 | 2004-05-25 | A series of semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100492668C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101033558B (en) * | 2006-03-08 | 2010-06-09 | 中国科学院福建物质结构研究所 | Infrared window material |
| CN111822013B (en) * | 2020-07-06 | 2022-11-18 | 重庆大学 | Single-cell PN junction and accurate construction method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020047143A1 (en) * | 2000-02-10 | 2002-04-25 | Motorola, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| CN2511955Y (en) * | 2001-12-07 | 2002-09-18 | 中国科学院上海技术物理研究所 | Te-Cd-Hg multi-element infrared detector with stretching electrodes |
| US20020158265A1 (en) * | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
| CN2529386Y (en) * | 2001-12-07 | 2003-01-01 | 中国科学院上海技术物理研究所 | Microminiature mercury-cadmium-telluride photo sensitive element chip for infrared detector |
| WO2004027854A2 (en) * | 2002-09-20 | 2004-04-01 | Commissariat A L'energie Atomique | Method for the production of electrodes on a type ii or vi semiconductor material or on a compound of said material |
-
2004
- 2004-05-25 CN CNB2004100443256A patent/CN100492668C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020047143A1 (en) * | 2000-02-10 | 2002-04-25 | Motorola, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US20020158265A1 (en) * | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
| CN2511955Y (en) * | 2001-12-07 | 2002-09-18 | 中国科学院上海技术物理研究所 | Te-Cd-Hg multi-element infrared detector with stretching electrodes |
| CN2529386Y (en) * | 2001-12-07 | 2003-01-01 | 中国科学院上海技术物理研究所 | Microminiature mercury-cadmium-telluride photo sensitive element chip for infrared detector |
| WO2004027854A2 (en) * | 2002-09-20 | 2004-04-01 | Commissariat A L'energie Atomique | Method for the production of electrodes on a type ii or vi semiconductor material or on a compound of said material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1705139A (en) | 2005-12-07 |
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Granted publication date: 20090527 Termination date: 20100525 |