CN101924016A - Heating method, device and substrate processing equipment - Google Patents
Heating method, device and substrate processing equipment Download PDFInfo
- Publication number
- CN101924016A CN101924016A CN2009100871177A CN200910087117A CN101924016A CN 101924016 A CN101924016 A CN 101924016A CN 2009100871177 A CN2009100871177 A CN 2009100871177A CN 200910087117 A CN200910087117 A CN 200910087117A CN 101924016 A CN101924016 A CN 101924016A
- Authority
- CN
- China
- Prior art keywords
- support plate
- temperature
- workpiece
- processed
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a heating method used for heating a support plate and a workpiece to be processed in a process chamber of substrate processing equipment. The method comprises the following steps of: (100) detecting the flatness of the support plate and judging whether the supporting plate has a deformation or not, if so, not heating the support plate and ensuring that the support plate enters a constant temperature state so as to eliminate the deformation; if not, heating the support plate; and (200) repeating the step (100) until the support plate and the workpiece to be process are heated to a target temperature T*. The heating method has the advantages of uniformly heating the support plate and the workpiece to be processed, effectively avoiding the deformation of the support plate and improving the processing quality of products. In addition, the invention also provides a heating device and the substrate processing equipment applying the method/device.
Description
Technical field
The present invention relates to substrate processing/processing technology field, particularly, relate to a kind of heating means and heater that in substrate processing equipment, support plate and workpiece to be processed is carried out heat treated.In addition, the invention still further relates to the substrate processing equipment of using above-mentioned heater and/or heating means.
Background technology
At present, the substrate treatment technology has been widely used in the manufacturing process of high-tech products such as solar cell, TFT panel and large scale integrated circuit.For example, plasma enhanced chemical vapor deposition (Plasma EnhancedChemical Vapor Deposition is hereinafter to be referred as the PECVD) technology as a kind of important substrate treatment technology just often is applied in above-mentioned field and the technology.Be that example is elaborated to the substrate treatment technology below with PECVD.
Although under numerous scientific research personnel's unremitting effort, the PECVD technology has obtained tremendous development and has become better and approaching perfection day by day, and along with the raising that product quality is required, still exists many ins and outs to remain to be paid close attention to and improvement.For example, in pecvd process, often need support plate, workpiece and whole cavity environment are carried out heat treated, and the uniformity of heating-up temperature is the key factor that influences plasma distribution and product processing quality.Therefore, support plate and workpiece to be processed being carried out that uniform heating handles is the key link that guarantees the final crudy of product.
See also Fig. 1, for present comparatively use always a kind of carries out the heating principle schematic diagram to support plate and workpiece to be processed in the processing chamber of PECVD equipment.In this airtight reaction chamber 1, be followed successively by top electrode 2, workpiece to be processed 3 (being to be processed/substrate of handling), support plate 4 and resistive heater 5 from top to bottom such as silicon chip etc.When carrying out heat treated, workpiece to be processed 3 is arranged on the support plate 4 equably, make resistive heater 5 produce heats support plate 4 is heated up thereby connect heating power supply then, support plate 4 with the workpiece to be processed 3 of heat transferred on it, is handled in the hope of carrying out uniform heating again.
At present, resistive heater often adopts three-phase alternating source power supply, thereby specifically is all to be connected in series one group of resistive heater in each of power supply in mutually each phase voltage of power supply is tended towards stability.But each is heating power through type (1) expression of middle resistive heater mutually: P=U
2/ R.Under the perfect condition, each resistance of organizing resistive heater equates, each phase voltage value of power supply also equates, thus can to support plate and on workpiece carry out uniform heating.Yet in actual applications, the magnitude of voltage of each phase can not be always or is equal fully, and therefore, the difference of magnitude of voltage will make the heating power of resistance wire also there are differences.And by formula (1) as can be known, because square being directly proportional of the heating power of resistive heater and magnitude of voltage, therefore,, and and then influence the uniformity of support plate preheating even if the less difference of magnitude of voltage also can affect greatly the heating power of resistive heater.
In addition, support plate adopts graphite material to make usually, has expansion to a certain degree after it is heated, the inhomogeneous situation that torsional deformation will occur if it is heated.For example, Fig. 2 is out of shape situation with regard to showing a kind of common support plate that causes because of the inequality of being heated.Wherein, support plate 4 zone lines owing to more its degrees of expansion that makes of being heated greater than fringe region, thereby cause the zone line of support plate 4 to raise up, this bossing even can touch top electrode 2 sometimes.It is more inhomogeneous that this will make that support plate and the workpiece to be processed that is carried thereof are heated, and then bring following problems to explained hereafter:
At first, owing to support plate distortion, the distortion that inequality occurs of being heated, change the workpiece to be processed that places support plate top is heated, and make the workpiece that is positioned at diverse location place, the support plate top difference of being heated, on the same what is more workpiece diverse location be heated also inconsistent.This will have a strong impact on the crudy of product, and can cause the waste of material resources and financial resources.
Secondly, in discharge process, the graphite support plate will use as bottom electrode.And after the support plate distortion, can cause the Electric Field Distribution inequality of reaction chamber inside, and then influence the required plasma environment of technology, finally reduce product quality.
Above-mentioned because of the variety of issue that is brought appears being out of shape in the support plate inequality of being heated for solving, the technical staff has adopted a kind of mode of support plate subregion heating as shown in Figure 3.As shown in the figure, support plate is divided into inner region 10 and outskirt 20 two parts, and each district is applied different voltages carries out heat treated, can offset uneven problem because the graphite support plate that voltage differences was caused heats up with expectation.But owing to be serially connected in resistive heater self structure difference etc. in each district, the scoring area heating still can't be solved because of the graphite support plate inequality of being heated the technological problems that is brought occurs being out of shape.
Summary of the invention
For addressing the above problem, the invention provides a kind of heating means, heater and substrate processing equipment, it can be when heating support plate and the workpiece to be processed that carried thereof, the distortion of effectively eliminating even avoiding support plate to produce because of being heated, and then effectively improve processing quality.
For this reason, the invention provides a kind of heating means, be used for processing chamber, support plate and the workpiece to be processed that carried thereof are heated, until reaching the required target temperature T of technology at substrate processing equipment
*, this method comprises the steps: 100) detect the flatness of described support plate and judge whether support plate distortion occurs, if then described support plate is not heated, and makes it enter temperature constant state to eliminate described distortion; If not, then described support plate is heated; 200) repeating step 100, until described support plate and workpiece to be processed are heated to target temperature T
*
Wherein, before described step 100, also comprise the step that support plate and workpiece to be processed are heated, and make the temperature of described support plate and workpiece to be processed reach first temperature T 1.
Wherein, described preheat temperature T1 is the arbitrary temperature in 30～150 ℃ of scopes.
Wherein, in the step 100, after judging support plate and not having distortion, described support plate and workpiece to be processed heated make its temperature temperature increment Δ T that raises.
Wherein, described temperature increment Δ T is the arbitrary temperature in 30～100 ℃ of scopes.
Wherein, in described step 100, adopt laser correlation transducer and/or deformation-sensor to detect the flatness of described support plate.
Wherein, described support plate adopts graphite material to make.
As another technical scheme, the present invention also provides a kind of heater, is used for the processing chamber at substrate processing equipment, support plate and the workpiece to be processed that carried thereof is heated, until reaching the required target temperature T of technology
*, this device comprises deformation detection unit, control unit and heating unit.Wherein, described deformation detection unit is used to detect the flatness of support plate, and will detect transfer of data to control unit; Described control unit judges whether described support plate distortion occurs, if then make described support plate and workpiece to be processed enter temperature constant state, and start the deformation detection unit after a period of time once more at constant temperature according to the detection data from described deformation detection unit; If not, then indicate described heating unit to carry out heating operation, and after the temperature of described support plate and workpiece to be processed reaches default phase temperature, start the deformation detection unit once more; Described heating unit heats described support plate and workpiece to be processed under the control of described control unit.
Wherein, described default phase temperature comprises first temperature T 1, and described first temperature T 1 is the arbitrary temperature in 30～150 ℃ of scopes.
Wherein, described default phase temperature comprises temperature and temperature increment Δ T sum previous stage, and described temperature increment Δ T is the arbitrary temperature in 30～100 ℃ of scopes.
Wherein, described support plate adopts graphite material to make.
Wherein, described heating unit comprises resistive heater, and described deformation detection unit comprises laser correlation transducer and/or deformation-sensor.
In addition, the present invention also provides a kind of substrate processing equipment, and it comprises processing chamber and place support plate in the processing chamber, and it uses the heating means that the invention described above provides, to described support plate and place the workpiece to be processed on the support plate to carry out heat treated.
In addition, the present invention also provides a kind of substrate processing equipment, it comprises processing chamber and places support plate in the processing chamber, and it is provided with the heater that the invention described above provides in described processing chamber, to described support plate and place the workpiece to be processed on the described support plate to carry out heat treated.
The present invention has following beneficial effect:
Heating means provided by the invention adopt the segmentation heating and detect the mode of support plate flatness, promptly, support plate and the workpiece to be processed that carried thereof are risen to a certain phase temperature, and the flatness of support plate detected, if distortion appears in support plate, then stop heating and make it to enter temperature constant state,, thereby eliminate the distortion that support plate produces because of being heated so that support plate temperature everywhere reaches unanimity gradually; If distortion does not appear in support plate or above-mentioned distortion is eliminated, then proceed to heat and make support plate and the workpiece to be processed that carried rises to the next stage temperature.Repeat such operation, reach the required target temperature T of technology until the temperature that makes support plate and workpiece to be processed
*This shows, because heating means provided by the invention have adopted the segmentation heating and have detected the mode of heating of support plate flatness, therefore it can eliminate even avoid support plate such problem to occur being out of shape because of the inequality of being heated effectively, and then eliminate even avoid causing its workpiece to be processed that carries to be heated uneven and finally influence the problem of workpiece quality, and/or eliminate even avoid in discharge process, being out of shape the problems such as chamber internal electric field skewness that cause because of graphite support plate as bottom electrode because of the support plate distortion.Thus, heating means provided by the invention can make workpiece to be processed be heated evenly, and can process for substrate/handle electric field environment uniformly is provided comparatively, and therefore further improve the crudy and the product yield of product.
In addition, because heater provided by the invention and substrate processing equipment have adopted above-mentioned segmentation heating equally and have detected the mode of heating of support plate flatness, thereby it can solve aforementionedly because of the support plate problem that inequality occurs of being heated equally effectively, and and then can improve the quality of products and the product yield.
Description of drawings
Fig. 1 at present commonly used carries out the heating principle schematic diagram to support plate and workpiece to be processed for a kind of in the pecvd process chamber;
Fig. 2 is a kind of common support plate distortion situation;
Fig. 3 is a kind of support plate subregion heating principle schematic diagram;
Fig. 4 is the schematic flow diagram of heating means provided by the invention;
Fig. 5 is the flow chart of first kind of embodiment of heating means provided by the invention;
Fig. 6 is the flow chart of second kind of embodiment of heating means provided by the invention; And
Fig. 7 is the structured flowchart of heater provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, heating means provided by the invention, heater and substrate processing equipment are described in detail below in conjunction with accompanying drawing.
Heating means provided by the present invention are mainly used in such as the processing chamber in the substrate processing equipment of apparatus for processing plasma, support plate and the workpiece to be processed that carried thereof are carried out heat treated, until reaching the required target temperature T of technology
*Here, support plate adopts graphite material to make more.Heating means provided by the invention can solve the problem that support plate occurs being out of shape because of the inequality of being heated effectively, and can form uniform electric field distribution in processing chamber, thereby effectively improve product processing quality.
See also Fig. 4, heating means provided by the invention mainly comprise the steps:
Here, the step that detects the flatness of support plate adopts laser correlation transducer and/or deformation-sensor to carry out usually.And when detecting support plate and do not occur being out of shape, then support plate and workpiece to be processed are heated and make its temperature temperature increment Δ T that raises.This temperature increment Δ T can be the arbitrary temperature in 30～100 ℃ of scopes, for example, can be 50 ℃.
Heating means provided by the invention generally before step 100, also comprise the step that support plate and workpiece to be processed are heated in actual applications, and the temperature of support plate and workpiece to be processed is heated to first temperature T 1.Here, first temperature T 1 can be the arbitrary temperature value in 30～150 ℃ of scopes, and for example, first temperature T 1 can be 100 ℃.
See also Fig. 5, wherein show the flow chart of a kind of embodiment of heating means provided by the invention.
At first, execution in step 510 is heated to first temperature T 1 with support plate and the workpiece to be processed that carried thereof.In the present embodiment, the temperature value that makes described first temperature T 1 is 100 ℃.
Then, forward step 520 to.In fact, step 520 can comprise that specifically step 521 is step by step a plurality of to step 523 etc.Wherein, step 521 detects the flatness of support plate, and judges whether support plate distortion occurs, if then forward step 522 to; If not, execution in step 523 then.Step 522, stop to make it enter temperature constant state to eliminate described distortion to the support plate heating, concrete thermostatic process can be, wait to stop promptly to detect one time the support plate flatness at set intervals again after the heating, after disappearing, distortion then forwards step 523 when detecting to, can determine according to practical experience in the past as for concrete interlude length, perhaps, can draw accurate interval duration by testing repeatedly.Step 523 is proceeded heat treated and is made temperature increment Δ T of its temperature rising support plate, forwards step 530 afterwards to.
In above-mentioned implementation, for example can adopt laser correlation transducer and/or deformation-sensor that the support plate flatness is measured; And the employing resistive heater is realized the intensification to support plate; And adopt temperature-measuring heat couple to measure the temperature of support plate and workpiece to be processed.
It is pointed out that in same heating process the value of said temperature increment Delta T is not to immobilize, and can adjust according to arts demand.For example, target temperature T
*Be 280 ℃, can be earlier support plate and workpiece to be processed be heated to 100 ℃ first temperature T 1, then, make temperature increment Δ T get 50 ℃, 50 ℃, 50 ℃, 30 ℃ and heat up progressively that finally to reach technology temperature required respectively.
Also it is to be noted, heating means provided by the present invention can have various deformation under the situation that does not break away from its spirit and essence, for example, Fig. 6 just shows the flow chart of the another kind of execution mode (that is second kind of execution mode) of heating means provided by the invention.Wherein
In the step 610 support plate is heated, so that the temperature of support plate and workpiece to be processed reaches first temperature T 1.
Present embodiment is compared with execution mode shown in Figure 5, and its difference is: the first, and after each support plate heats up, the execution in step 621 and distortion situation of support plate is detected immediately; The second, make in execution in step 622 after the support plate distortion disappearance, change the temperature that detects support plate and workpiece to be processed in the execution in step 630 into and whether reach target temperature T
*Operation; The 3rd, when detecting the support plate temperature, step 630 do not reach the required target temperature T of technology
*After, execution in step 623 continues the operation of intensification Δ T again; The 4th, before step 610, also include and preestablish first temperature T 1, temperature increment Δ T, target temperature T
*The step of value.
It is to be noted, though above-mentioned Fig. 5 and execution mode shown in Figure 6 have many differences, but the flesh and blood of its heating process is consistent, promptly, adopt the mode of heating of segmentation heating and detection support plate flatness, just will be divided into a plurality of heating periods to the heating process of support plate and workpiece to be processed carries out, and after each the intensification, the support plate flatness is detected, as find support plate distortion then to stop heating and keep constant temperature after its distortion disappears, to proceed heating again that so repetition is until support plate and workpiece to be processed are heated to target temperature.
As another technical scheme, the present invention also provides a kind of heater, and it is used for the processing chamber at substrate processing equipment, support plate and workpiece to be processed is heated, until reaching the required target temperature T of technology
*Here, described support plate adopts graphite material to make equally.
See also Fig. 7, heater provided by the invention mainly comprises: deformation detection unit, control unit and heating unit.
Wherein, the deformation detection unit is used to detect the flatness of support plate, and will detect transfer of data to control unit.In actual applications, described deformation detection unit can comprise laser correlation transducer and/or deformation-sensor.
Control unit according to the detection data from the deformation detection unit, judges whether support plate distortion occurs, if, then do not instruct, and make support plate and workpiece to be processed enter temperature constant state, and start the deformation detection unit after a period of time once more at constant temperature to heating unit transmission heating; If not, then indicate heating unit to carry out heating operation, and after the temperature of support plate and workpiece to be processed reaches default phase temperature, start the deformation detection unit once more.Here, described default phase temperature comprises first temperature T 1, perhaps, comprises temperature and temperature increment Δ T sum previous stage.Wherein, first temperature T 1 can be the arbitrary temperature in 30～150 ℃ of scopes; Temperature increment Δ T can be the arbitrary temp in 30～100 ℃ of scopes.
Heating unit, it heats support plate and workpiece to be processed under the control of control unit.In the practical application, described heating unit can comprise resistive heater.
In addition, the present invention also provides a kind of substrate processing equipment, comprises processing chamber and places support plate in the processing chamber, and it uses heating means that the invention described above provided, and support plate and the workpiece to be processed that is placed on the support plate are carried out heat treated.
In addition, the present invention also provides a kind of substrate processing equipment, comprise processing chamber and place support plate in the processing chamber, and in processing chamber, be provided with the heater that the invention described above provides, in order to support plate and the workpiece to be processed that is placed on the support plate are carried out heat treated.
Heating means provided by the present invention, device, and the substrate processing equipment of using method, the heating process that employing progressively heats up to support plate and workpiece to be processed, and the flatness to support plate detects in temperature-rise period, when detecting support plate appearance distortion, it is carried out thermostatic control is out of shape with timely elimination, thereby solved the problem that support plate occurs being out of shape because of the inequality of being heated effectively, and then avoid improving product percent of pass because of the workpiece to be processed uneven product quality problem that is caused that is heated.And, because technical scheme of the present invention has solved the problem of support plate distortion effectively, therefore, in the discharge process of plasma treatment procedure, the electric field that is produced as the graphite support plate of bottom electrode can roughly evenly distribute, for substrate processing/processing provides good electric field environment, thereby effectively improve the crudy of product.
It is pointed out that heating means/device provided by the invention is not limited to use in the processing chamber of substrate processing equipment, it can be used in the preheating chamber warm to support plate and workpiece to be processed equally.
The inverse process that also it is pointed out that heating means provided by the present invention/device can be used as to be handled the cooling of support plate and workpiece to be processed, thereby can effectively avoid the situation that support plate is too high because of cooldown rate or being out of shape appears in the inequality of catching a cold.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (16)
1. heating means are used for the processing chamber at substrate processing equipment, support plate and the workpiece to be processed that carried thereof are heated, until reaching the required target temperature T of technology
*, it is characterized in that this method comprises the steps:
100) detect the flatness of described support plate and judge whether support plate distortion occurs, if then described support plate is not heated, and make it enter temperature constant state to eliminate described distortion; If not, then described support plate is heated;
200) repeating step 100, until described support plate and workpiece to be processed are heated to target temperature T
*
2. heating means according to claim 1 is characterized in that, before described step 100, also comprise the step that support plate and workpiece to be processed are heated, and make the temperature of described support plate and workpiece to be processed reach first temperature T 1.
3. heating means according to claim 2 is characterized in that, described preheat temperature T1 is the arbitrary temperature in 30～150 ℃ of scopes.
4. heating means according to claim 3 is characterized in that, described preheat temperature T1 is 100 ℃.
5. heating means according to claim 1 is characterized in that, in the step 100, after judging support plate and not having distortion, described support plate and workpiece to be processed heated make its temperature temperature increment Δ T that raises.
6. heating means according to claim 5 is characterized in that, described temperature increment Δ T is the arbitrary temperature in 30～100 ℃ of scopes.
7. heating means according to claim 6 is characterized in that, described temperature increment Δ T is 50 ℃.
8. heating means according to claim 1 is characterized in that, in described step 100, adopt laser correlation transducer and/or deformation-sensor to detect the flatness of described support plate.
9. heating means according to claim 1 is characterized in that, described support plate adopts graphite material to make.
10. a heater is used for the processing chamber at substrate processing equipment, support plate and the workpiece to be processed that carried thereof is heated, until reaching the required target temperature T of technology
*, it is characterized in that this device comprises deformation detection unit, control unit and heating unit, wherein
Described deformation detection unit is used to detect the flatness of support plate, and will detect transfer of data to control unit;
Described control unit judges whether described support plate distortion occurs, if then make described support plate and workpiece to be processed enter temperature constant state, and start the deformation detection unit after a period of time once more at constant temperature according to the detection data from described deformation detection unit; If not, then indicate described heating unit to carry out heating operation, and after the temperature of described support plate and workpiece to be processed reaches default phase temperature, start the deformation detection unit once more;
Described heating unit heats described support plate and workpiece to be processed under the control of described control unit.
11. heater according to claim 10 is characterized in that, described default phase temperature comprises first temperature T 1, and described first temperature T 1 is the arbitrary temperature in 30～150 ℃ of scopes.
12. heater according to claim 10 is characterized in that, described default phase temperature comprises temperature and temperature increment Δ T sum previous stage, and described temperature increment Δ T is the arbitrary temperature in 30～100 ℃ of scopes.
13. heater according to claim 10 is characterized in that, described support plate adopts graphite material to make.
14. heater according to claim 10 is characterized in that, described heating unit comprises resistive heater, and described deformation detection unit comprises laser correlation transducer and/or deformation-sensor.
15. substrate processing equipment, it comprises processing chamber and places the interior support plate of processing chamber, it is characterized in that application rights requires any described heating means in 1 to 9, to described support plate and place the workpiece to be processed on the described support plate to carry out heat treated.
16. substrate processing equipment, it comprises processing chamber and places the interior support plate of processing chamber, it is characterized in that, in described processing chamber, be provided with as any described heater in the claim 10 to 14, to described support plate and place the workpiece to be processed on the described support plate to carry out heat treated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910087117A CN101924016B (en) | 2009-06-11 | 2009-06-11 | Heating method, device and substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910087117A CN101924016B (en) | 2009-06-11 | 2009-06-11 | Heating method, device and substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101924016A true CN101924016A (en) | 2010-12-22 |
| CN101924016B CN101924016B (en) | 2012-09-05 |
Family
ID=43338855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910087117A Active CN101924016B (en) | 2009-06-11 | 2009-06-11 | Heating method, device and substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101924016B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752171A (en) * | 2019-11-01 | 2020-02-04 | 长江存储科技有限责任公司 | Wafer curvature adjusting device and method |
| CN114917467A (en) * | 2022-05-18 | 2022-08-19 | 广州中大中鸣科技有限公司 | Traditional Chinese medicine packet therapeutic apparatus, control method, device, equipment and storage medium |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419469C (en) * | 2002-12-21 | 2008-09-17 | 鸿富锦精密工业（深圳）有限公司 | Light conducting board deformation correcting method |
| JP2005265202A (en) * | 2004-03-16 | 2005-09-29 | Pioneer Electronic Corp | Heating device |
-
2009
- 2009-06-11 CN CN200910087117A patent/CN101924016B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752171A (en) * | 2019-11-01 | 2020-02-04 | 长江存储科技有限责任公司 | Wafer curvature adjusting device and method |
| CN110752171B (en) * | 2019-11-01 | 2022-07-29 | 长江存储科技有限责任公司 | Device and method for adjusting wafer curvature |
| CN114917467A (en) * | 2022-05-18 | 2022-08-19 | 广州中大中鸣科技有限公司 | Traditional Chinese medicine packet therapeutic apparatus, control method, device, equipment and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101924016B (en) | 2012-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7313931B2 (en) | Method and device for heat treatment | |
| CN104233195B (en) | Evaporation equipment and evaporation method | |
| US20110183279A1 (en) | Substrate heating apparatus, substrate heating method and substrate processing system | |
| KR20070003823A (en) | Method and apparatus for temperature control | |
| EP1548809B8 (en) | Heat treatment method and heat treatment apparatus | |
| CN107331595A (en) | For plasma treatment appts and its temprature control method and calibration method | |
| CN101924016B (en) | Heating method, device and substrate processing equipment | |
| US6780795B2 (en) | Heat treatment apparatus for preventing an initial temperature drop when consecutively processing a plurality of objects | |
| TW200729298A (en) | Heating system of batch type reaction chamber and method thereof | |
| CN111415887A (en) | Wafer heating device | |
| WO2007091299A1 (en) | Method for heating tft substrate, temperature measuring method for tft substrate, and temperature control method for tft substrate | |
| WO2014005362A1 (en) | Apparatus and process for baking treatment of glass substrate | |
| CN104421999A (en) | Temperature control method and device for heat accumulation heating system | |
| KR20060114284A (en) | Heat treatment apparatus and heat treatment method | |
| JPH118204A (en) | High speed lamp-heating processor | |
| JP4829833B2 (en) | Temperature estimation method and temperature estimation device | |
| WO2007081185A1 (en) | Heating apparatus for batch type reaction chamber | |
| CN106526981A (en) | Temperature-control alignment device based on multi-model glass | |
| CN109807191A (en) | A kind of heating means and its device of aluminium bar | |
| CN101853774B (en) | Heating cavity and semiconductor processing device | |
| JPH06132231A (en) | Cvd equipment | |
| KR101261399B1 (en) | Emperature control system of heating system and temperature control method using the same | |
| JP3466673B2 (en) | Vacuum furnace with movable heat reflector | |
| Liu et al. | Temperature gradient in sample and its effect on enthalpy relaxation model fitting of polystyrene | |
| CN107589572A (en) | Plummer, color film baking machine for color film baking machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |