CN101916818A - Light-emitting diode with gradually changed refractive index of light-emitting layer - Google Patents
Light-emitting diode with gradually changed refractive index of light-emitting layer Download PDFInfo
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- CN101916818A CN101916818A CN2010102314306A CN201010231430A CN101916818A CN 101916818 A CN101916818 A CN 101916818A CN 2010102314306 A CN2010102314306 A CN 2010102314306A CN 201010231430 A CN201010231430 A CN 201010231430A CN 101916818 A CN101916818 A CN 101916818A
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Abstract
The invention relates to a light-emitting diode with gradually changed refractive index of a light-emitting layer. The refractive index of the light-emitting layer is gradually changed by arranging a protective layer outside the light-emitting layer of the light-emitting diode, wherein the refractive index of the material of the protective layer is between that of the material of the light-emitting layer and that of the packaging material of the light-emitting diode. The luminescent efficiency of the light-emitting diode can be improved and the leakage rate of the light-emitting diode can be reduced.
Description
Technical field
The present invention relates to the led technology field, be specifically related to a kind of efficient LED that goes out the photosphere gradually changed refractive index that improves luminous efficiency that has.
Background technology
Because have advantages such as efficient, energy-saving and environmental protection, light-emitting diode is applied in every field such as illumination, traffic, communication, backlight gradually.
Lumination of light emitting diode layer material refractive index is between 2.2 to 3.8, and the refractive index of its encapsulating material is about 1.5, compare obviously on the low side with the light LED material refractive index, this just makes that the light extraction efficiency of light-emitting diode is very low, in general between 4% to 12%, most of light has been bound in the inside of light-emitting diode.Simultaneously,, lower the leaky of device, can between light-emitting diode and encapsulating material, deposit layer protective layer, as SiO in order to protect light-emitting diode chip for backlight unit
2, as shown in Figure 1, but SiO
2Refractive index be about 1.46, can lower luminous efficiency so on the contrary.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light-emitting diode that goes out the photosphere gradually changed refractive index, realizes the luminescent layer gradually changed refractive index, and it can improve the luminous efficiency of Light-Emitting Diode, and can lower the leakage rate of light-emitting diode.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of light-emitting diode that goes out the photosphere gradually changed refractive index; go out photosphere at light-emitting diode and be outside equipped with protective layer, the protective layer material refractive index is between luminescent layer material refractive index and light-emitting diode packaging material refractive index.
The invention has the beneficial effects as follows: realize the luminescent layer gradually changed refractive index, when lowering leakage rate, improved the luminous efficiency of light-emitting diode.
On the basis of technique scheme, the present invention can also do following qualification.
Further, described protective layer material is Y
2O
3, SiO, Al
2O
3, TiO
2Or its combination in any.
Further, described protective layer material employing vacuum evaporation or electron beam evaporation plating or radio frequency or sputter or plasma chemical vapor deposition deposit and the formation protective layer.
Further, described light-emitting diode is the light-emitting diode of side direction structure, comprise substrate, and at the transition zone, n type semiconductor layer, active layer, p type semiconductor layer, the p type contact electrode floor that form successively on the substrate, be arranged at p electrode and the n electrode on the n of n type semiconductor layer type semiconductor layer electrode district on the p district contact electrode floor.
Further, described protective layer is arranged on the p district contact electrode and/or n type semiconductor layer electrode district of light-emitting diode.
Further, described light-emitting diode is the light-emitting diode of vertical stratification, described light-emitting diode is the light-emitting diode of vertical stratification, comprise conductive substrates, the transition zone, n type semiconductor layer, active layer, p type semiconductor layer, p district contact electrode floor, the p electrode that on conductive substrates one side, form successively, and the n electrode that on the conductive substrates opposite side, forms.
Further, described protective layer is arranged on the light-emitting diode p district contact electrode.
Description of drawings
Fig. 1 is the traditional structure schematic diagram;
Fig. 2 is the embodiment of the invention 1 structural representation;
Fig. 3 is the embodiment of the invention 2 structural representations;
Fig. 4 is the embodiment of the invention 3 structural representations;
Fig. 5 is the embodiment of the invention 4 structural representations;
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
As shown in Figure 2, in embodiment 1 structure, light-emitting diode is the light-emitting diode of side direction structure, comprise substrate, and the transition zone that on substrate, forms successively, the n type semiconductor layer, active layer, the p type semiconductor layer, p type contact electrode layer, be arranged at p electrode and the n electrode on the n of n type semiconductor layer type semiconductor layer electrode district on the p district contact electrode floor, adopt vacuum evaporation or electron beam evaporation plating or radio frequency (RF) sputter (sputtering) or or plasma chemical vapor deposition (PECVD) on p district contact electrode, deposit layer of material, the refractive index of this material is between luminescent layer refractive index and encapsulating material refractive index, as Al
2O
3, Y
2O
3, SiO, TiO
2Or its combination in any.The relative Fig. 1 of this structure, light extraction efficiency can improve 10%.
Fig. 3 is embodiment 2 structural representations, light-emitting diode is the light-emitting diode of side direction structure, comprise substrate, and the transition zone that on substrate, forms successively, the n type semiconductor layer, active layer, the p type semiconductor layer, p type contact electrode layer, be arranged at p electrode and the n electrode on the n of n type semiconductor layer type semiconductor layer electrode district on the p district contact electrode floor, adopt vacuum evaporation or electron beam evaporation plating or radio frequency (RF) or sputter (sputtering) or plasma chemical vapor deposition (PECVD) on n type semiconductor layer electrode district, to deposit layer of material, the refractive index of this material is between luminescent layer refractive index and encapsulating material refractive index, as Al
2O
3, Y
2O
3, SiO, TiO
2Or its combination in any.The relative Fig. 1 of this structure, light extraction efficiency can improve 5%.
Fig. 4 is embodiment 3 structural representations, light-emitting diode is the light-emitting diode of side direction structure, comprise substrate, and the transition zone that on substrate, forms successively, the n type semiconductor layer, active layer, the p type semiconductor layer, p type contact electrode layer, be arranged at p electrode and the n electrode on the n of n type semiconductor layer type semiconductor layer electrode district on the p district contact electrode floor, adopt vacuum evaporation or electron beam evaporation plating or radio frequency (RF) or sputter (sputtering) or plasma chemical vapor deposition (PECVD) depositing layer of material on the p district contact electrode and on the n type semiconductor layer electrode district, the refractive index of this material is between luminescent layer refractive index and encapsulating material refractive index, as Y
2O
3, SiO, Al
2O
3, TiO
2Or its combination in any.The relative Fig. 1 of this structure, light extraction efficiency can improve 15%.
Fig. 5 is embodiment 1 structural representation, light-emitting diode is the light-emitting diode of vertical stratification, comprise conductive substrates, the transition zone that on conductive substrates one side, forms successively, the n type semiconductor layer, active layer, the p type semiconductor layer, p district contact electrode floor, the p electrode, and the n electrode that on the conductive substrates opposite side, forms, adopt vacuum evaporation or electron beam evaporation plating or radio frequency (RF) or sputter (sputtering) or plasma chemical vapor deposition (PECVD) on the exiting surface p district of vertical stratification contact electrode, to deposit layer of material, the refractive index of this material is between luminescent layer refractive index and encapsulating material refractive index, as Y
2O
3, SiO, Al
2O
3, TiO
2The relative Fig. 1 of this structure, light extraction efficiency can improve 10%.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a light-emitting diode that goes out the photosphere gradually changed refractive index is characterized in that, goes out photosphere at light-emitting diode and is outside equipped with protective layer, and the protective layer material refractive index is between luminescent layer material refractive index and light-emitting diode packaging material refractive index.
2. light-emitting diode according to claim 1 is characterized in that, described protective layer material is Y
2O
3, SiO, Al
2O
3, TiO
2Or its combination in any.
3. light-emitting diode according to claim 1 is characterized in that, described protective layer material employing vacuum evaporation or electron beam evaporation plating or radio frequency or sputter or plasma chemical vapor deposition deposit and the formation protective layer.
4. light-emitting diode according to claim 1, it is characterized in that, light-emitting diode is the light-emitting diode of side direction structure, comprise substrate, and at the transition zone, n type semiconductor layer, active layer, p type semiconductor layer, the p type contact electrode floor that form successively on the substrate, be arranged at p electrode and the n electrode on the n of n type semiconductor layer type semiconductor layer electrode district on the p district contact electrode floor.
5. light-emitting diode according to claim 4 is characterized in that, described protective layer is arranged on the p district contact electrode floor and/or n type semiconductor layer electrode district of light-emitting diode.
6. light-emitting diode according to claim 1, it is characterized in that, described light-emitting diode is the light-emitting diode of vertical stratification, comprise conductive substrates, the transition zone, n type semiconductor layer, active layer, p type semiconductor layer, p district contact electrode floor, the p electrode that on conductive substrates one side, form successively, and the n electrode that on the conductive substrates opposite side, forms.
7. light-emitting diode according to claim 6 is characterized in that, described protective layer is arranged on the light-emitting diode p district contact electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102314306A CN101916818A (en) | 2010-07-20 | 2010-07-20 | Light-emitting diode with gradually changed refractive index of light-emitting layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102314306A CN101916818A (en) | 2010-07-20 | 2010-07-20 | Light-emitting diode with gradually changed refractive index of light-emitting layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101916818A true CN101916818A (en) | 2010-12-15 |
Family
ID=43324267
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102314306A Pending CN101916818A (en) | 2010-07-20 | 2010-07-20 | Light-emitting diode with gradually changed refractive index of light-emitting layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022310A (en) * | 2012-12-30 | 2013-04-03 | 佛山市国星半导体技术有限公司 | Light extraction layer of LED luminous chip and LED device |
| CN103257779A (en) * | 2012-05-22 | 2013-08-21 | 光驰科技(上海)有限公司 | A capacitive touch screen substrate and a manufacture method and a manufacture device thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1661820A (en) * | 2004-02-26 | 2005-08-31 | 元砷光电科技股份有限公司 | Light emitting diode |
| CN1691358A (en) * | 2004-04-23 | 2005-11-02 | 华宇电脑股份有限公司 | LED with zinc oxide contact electrode |
| CN101222015A (en) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN201466056U (en) * | 2009-04-07 | 2010-05-12 | 山东璨圆光电科技有限公司 | Crystal-coated LED (light emitting diode) with high luminous efficiency |
-
2010
- 2010-07-20 CN CN2010102314306A patent/CN101916818A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1661820A (en) * | 2004-02-26 | 2005-08-31 | 元砷光电科技股份有限公司 | Light emitting diode |
| CN1691358A (en) * | 2004-04-23 | 2005-11-02 | 华宇电脑股份有限公司 | LED with zinc oxide contact electrode |
| CN101222015A (en) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN201466056U (en) * | 2009-04-07 | 2010-05-12 | 山东璨圆光电科技有限公司 | Crystal-coated LED (light emitting diode) with high luminous efficiency |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257779A (en) * | 2012-05-22 | 2013-08-21 | 光驰科技(上海)有限公司 | A capacitive touch screen substrate and a manufacture method and a manufacture device thereof |
| CN103022310A (en) * | 2012-12-30 | 2013-04-03 | 佛山市国星半导体技术有限公司 | Light extraction layer of LED luminous chip and LED device |
| CN103022310B (en) * | 2012-12-30 | 2016-03-23 | 佛山市国星半导体技术有限公司 | The light-extraction layer of LED luminescence chip and LED matrix |
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Application publication date: 20101215 |