CN101908461B - Ion beam surface treatment equipment and method for suppressing secondary electron emission - Google Patents
Ion beam surface treatment equipment and method for suppressing secondary electron emission Download PDFInfo
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- CN101908461B CN101908461B CN2010102210699A CN201010221069A CN101908461B CN 101908461 B CN101908461 B CN 101908461B CN 2010102210699 A CN2010102210699 A CN 2010102210699A CN 201010221069 A CN201010221069 A CN 201010221069A CN 101908461 B CN101908461 B CN 101908461B
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Abstract
The invention discloses ion beam surface treatment equipment and an ion beam surface treatment method for suppressing secondary electron emission, which belong to the field of vacuum electronic technology. The equipment comprises a mechanical pump in a forvacuum state, a secondary vacuum molecular pump and a sample table component, wherein a sputtering deposition component and an ion source are arranged above the sample table component. The method used by the equipment comprises the following steps of: vacuumizing a system; heating a sample; filling an argon gas; performing ion source sputtering; cooling the sample; and detecting a coefficient value of the secondary electron emission by using a special instrument. The equipment and the method effectively suppress the secondary electron emission; and a molybdenum target used in the equipment is simple to machine and low in cost.
Description
Technical field
The invention belongs to the vacuum electronic technical field, specially refer to a kind of ion beam surface treatment equipment and method that is used to suppress receive under the vacuum state secondary of electron bombard electrode.
Background technology
Travelling wave tube is widely used in radar, electronic warfare, weaponrys such as satellite communication and precise guidance.In recent years, constantly increase, simultaneously the travelling wave tube performance has also been proposed requirements at the higher level, comprising higher homogeneous tube efficient for the travelling wave tube demand.Higher homogeneous tube efficient not only means the power consumption that reduces travelling wave tube, the weight and volume that reduces power supply, and means the space of improving device reliability and life-span is provided.This is particularly important for airborne and space travelling wave tube, because the travelling wave tube of this type equipment inevitably receives the restriction of power consumption and weight.It is reported that spaceborne travelling wave tube homogeneous tube efficient improves one percentage point, economic benefit is up to 30,000,000 dollars.Therefore, the homogeneous tube efficient of raising space travelling wave tube is very important.
The homogeneous tube efficient of travelling wave tube depends primarily on electronics and annotates the interaction efficiency with high-frequency circuit, and the efficient of collector.A kind of method that improves collector efficient is to adopt multi-level depressurization collector (MDC).In theory; MDC makes the electronics that leaves the interaction region by the different speed categorised collection; Promptly than the electronics of kinetic energy through being collected than the collector of electronegative potential (like minimum cathode potential) behind the higher decelerating field, the electronics of low kinetic energy is then adopted the collector of high potential, make the electronics can both " soft landing "; Reduce electronics and surperficial collision loss, with the part kinetic energy feedback power of electronics.
Multi-level depressurization collector reasonable in design can improve the homogeneous tube efficient of travelling wave tube.Yet in fact, there is the distribution of certain way in the energy that leaves the electronics of interaction region, and the effect of MDC is subject to the secondary of collector material all the time.The emission ratio of secondary electron, one side depends on the character of material, and is closely related with the pattern of material surface on the other hand.For oxygen-free copper, it has excellent thermal conductivity, conductance and can process and welding performance in metal material, often be used as desirable collector material.Not enough is, and its secondary electron yield is higher.Reducing or suppress a method of its secondary, is to start with from the surface topography modification of oxygen-free copper, thereby avoids on oxygen-free copper, applying dissimilar materials (like graphite etc.).Collector material commonly used is also with regard to first-selected thermal conductivity and the excellent oxygen-free copper of conductance.But the secondary electron yield peak of oxygen-free copper is up to 1.35, and in extremely wide primary electron energy range, all demonstrates higher secondary electron yield.Primary electron produces a large amount of secondary electrons when arriving collector inevitably, and the primary electron of a certain amount of elastic scattering.The electronics of these band energy appears near the collectors at different levels, then causes considerable energy loss when they get on the collector once more, thereby reduces the efficient of travelling wave tube collector, and the body temperature is risen, and has further reduced the efficient of travelling wave tube again; The existence of a large amount of low energy secondary electrons also possibly cause backflow, increases the high frequency heat dissipation power and forms noise.So it is most important to suppress secondary.The implication of the application's theme also is able to clearer and more definite.
Summary of the invention
The technical issues that need to address of the present invention are that in the travelling wave tube collector, inevitably there being a large amount of secondary electrons, they have reduced the efficient of the collector and the homogeneous tube of travelling wave tube, in order to overcome this drawback, will manage to suppress secondary.The object of the invention just provides a kind of ion beam surface treatment equipment and method that suppresses secondary.
For realizing the object of the invention, the technical scheme of being taked is following, a kind of ion beam surface treatment equipment that suppresses secondary; Comprise the mechanical pump, secondary vacuum molecular pump and the sample stage assembly that are in forvacuum; It is characterized in that sample stage assembly top is provided with the sputtering sedimentation assembly, the form of said sputtering sedimentation assembly is; Be designed to the molybdenum target of tooth wing ring plate shape structure; The tooth wing becomes 45 to 85 degree angles with horizontal plane, through the ratio of the adjustment tooth wing with the vacancy area, with the deposition rate of adjustment molybdenum atom; This sputtering sedimentation assembly upper space is provided with ion source, and they have formed the vacuum equipment of sealing, and this equipment is also connecting an electrical control cubicles.
The electrical control cubicles power supply is used for the power supply and the control thereof of ion source, vacuum pump and parts such as vacuum gauge, heater.This element of installation is divided into high vacuum system and two major parts of surface treated member again.High vacuum system can be made up of high-vacuum pump (like molecular pump) and roughing pump (like mechanical pump) and measurement component etc., and the ultimate vacuum of system reaches 5x10
-5Pa.
Surface treated member is the core of this equipment, mainly comprises ion source, like Kaufman ion source, sputtering sedimentation assembly and sample stage.The Kaufman ion source is positioned at the top of vacuum chamber, and the sputtering sedimentation assembly places the sample stage top, be used for hanging down the atom of sputtering raste in the sample surfaces deposition, and like molybdenum atom, be the effect of mask.The method that constitutes the sputtering sedimentation assembly is, utilizes same ion source, and molybdenum target is carried out sputter.Said molybdenum target upper diameter is suitable with the ion beam spot diameter, and is of embodiment.In order to control and adjust the deposition rate of molybdenum atom, can set about from the molybdenum target assembly, said molybdenum target is designed to dentalation, through the ratio of the adjustment tooth wing with the vacancy area, just can adjust the deposition rate of molybdenum atom.Sample is placed on the work stage of rotation, with the consistency of the deposition rate of guaranteeing molybdenum atom.
In order to obtain optimum process condition, after design and having processed above-mentioned surface processing equipment, also need carry out technological experiment.Because there are differences between different ion sources, molybdenum target and the collector sample.The method of test is, ins conjunction with the measurement of secondary electron coefficient and the analysis of ESEM, and the optimization technological parameter, purpose is to make secondary electron coefficient minimum.The main technologic parameters of optimizing comprises: the tooth wing of energy of ions and density, molybdenum target and the heating-up temperature of the ratio of vacancy area, sample, the time of processing etc.
A kind of ion beam surface treatment method that suppresses secondary is characterized in that operate according to following steps, they are:
A. sample is placed on the rotary table of vacuum system;
B. system vacuumizes, and vacuum reaches 1x10
-3Pa;
C. sample is heated to, 550 ℃ ± 10 ℃;
D. charge into argon gas 5x10
-3～1x10
-1Pa;
E. start the ion source sputter, line 1～5mA/cm
2, bundle is pressed 1～2keV;
F. sputtering technology timing, 0.5～2 hour;
G. close ion source and heating source, the sample cooling;
H. adopt specialized equipment to detect the secondary electron yield value.
The invention has the beneficial effects as follows that secondary has obtained effective inhibition, in the equipment of being implemented the processing of used molybdenum target simple, can adopt the molybdenum sheet punching out, or shear and to form.Processing cost is low, is convenient to adjust the deposition rate of molybdenum atom.The design of molybdenum target is oversimplified device power supply (DPS), utilizes an ion source to accomplish the deposition of molybdenum atom and the sputter on oxygen-free copper surface simultaneously.So not only alleviate the complexity of equipment, reduced cost, simplified the operation of equipment program simultaneously.Another advantage of the present invention is to adopt common commercialization Kaufman ion source, and sample directly links to each other with ground with sample stage, and easy-to-operate is with low cost.
Description of drawings
Fig. 1 is for suppressing the ion beam surface treatment equipment sketch map of secondary;
Fig. 2 is used molybdenum target assembly assumption diagram;
Fig. 3 is for suppressing the ion beam surface treatment method flow chart of secondary.
Embodiment
With reference to Fig. 1; Represent a kind of ion beam surface treatment equipment sketch map that suppresses secondary, among the figure, the mechanical pump 5 that is in forvacuum is connecting secondary vacuum molecular pump 4 and sample stage assembly 3; Sample stage assembly top is provided with sputtering sedimentation assembly 2; This sputtering sedimentation assembly upper space is provided with Kaufman ion source 1, and they have formed the vacuum equipment of sealing, and this equipment is also connecting an electrical control cubicles 6.
With reference to Fig. 2, a kind of structure chart of expression sputtering sedimentation assembly, it is the ring plate shape structure that an edge is provided with a plurality of tooth wings, and 2-1 is the tooth wing among the figure, and tooth is interplane to be vacancy 2-2.
With reference to Fig. 3, represent the ion beam surface treatment method flow chart of said inhibition secondary, expression is operated according to following steps among the figure:
A. sample is placed on the rotary table of vacuum system;
B. system vacuumizes, and ultimate vacuum reaches 1x10
-3Pa;
C. sample is heated to 550 ℃ ± 10 ℃;
D. charge into argon gas 1x10
-3Pa～1x10
-1Pa;
E. start the ion source sputter, line 1～5mA/cm
2, bundle is pressed 1～2keV;
F. sputtering technology timing, 0.5～2 hour;
G. close ion source and heating source, the sample cooling;
H. adopt instrumentation to detect the secondary electron yield value.
Claims (2)
1. an ion beam surface treatment equipment that suppresses secondary comprises the mechanical pump, secondary vacuum molecular pump and the sample stage assembly that are in forvacuum, it is characterized in that; Sample stage assembly top is provided with the sputtering sedimentation assembly; The form of said sputtering sedimentation assembly is, is designed to the molybdenum target of tooth wing ring plate shape structure, and the tooth wing becomes 45 to 85 degree angles with horizontal plane; Through the ratio of the adjustment tooth wing, with the deposition rate of adjustment molybdenum atom with the vacancy area; This sputtering sedimentation assembly upper space is provided with ion source, and they have formed the vacuum equipment of sealing, and this equipment is also connecting an electrical control cubicles.
2. method of using according to the ion beam surface treatment equipment of the said inhibition secondary of claim 1 is characterized in that operate according to following steps, they are:
A. sample is placed on the rotary table of vacuum system;
B. system vacuumizes, and vacuum degree reaches 1x10
-3Pa;
C. sample heating, 550 ℃ ± 10 ℃;
D. charge into argon gas 5x10
-3Pa～1x10
-1Pa;
E. start the ion source sputter, line 1～5mA/cm
2, bundle is pressed 1～2keV;
F. sputtering technology timing, 0.5～2 hour;
G. close ion source and heating source, the sample cooling;
H. instrumentation detects the secondary electron yield value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102210699A CN101908461B (en) | 2010-07-08 | 2010-07-08 | Ion beam surface treatment equipment and method for suppressing secondary electron emission |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102210699A CN101908461B (en) | 2010-07-08 | 2010-07-08 | Ion beam surface treatment equipment and method for suppressing secondary electron emission |
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|---|---|
| CN101908461A CN101908461A (en) | 2010-12-08 |
| CN101908461B true CN101908461B (en) | 2012-07-04 |
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| CN2010102210699A Active CN101908461B (en) | 2010-07-08 | 2010-07-08 | Ion beam surface treatment equipment and method for suppressing secondary electron emission |
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| CN108080631B (en) * | 2017-12-15 | 2020-01-17 | 中国电子科技集团公司第十二研究所 | Collector electrode material, preparation method thereof, surface treatment method and collector comprising collector electrode material |
| CN113529041B (en) * | 2021-07-13 | 2023-03-14 | 中国工程物理研究院流体物理研究所 | Ion beam injection device and method for inhibiting secondary electron emission of insulating dielectric material |
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| CN1017354B (en) * | 1988-11-09 | 1992-07-08 | 四川大学 | Membrane forming device using sputtering method of ion beam reaction |
| CN1024146C (en) * | 1990-03-22 | 1994-04-06 | 四川大学 | Process for preparing film of multicomponent metal oxide |
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Effective date of registration: 20161209 Address after: 100015 Jiuxianqiao Road, Beijing, No. 13, No. Patentee after: Beijing Vacuum Electronic Tech. Corp. Address before: 100015 Jiuxianqiao Road, Beijing, No. 13, No. Patentee before: No.12 Inst., China Electronic Sci-Tech Group Corp. |
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Address after: 100015 Jiuxianqiao Road, Beijing, No. 13, No. Patentee after: Beijing Vacuum Electronic Technology Co., Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 13, No. Patentee before: Beijing Vacuum Electronic Tech. Corp. |
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