CN101901640A - Method for preparing flexible and transparent conductive graphene membrane - Google Patents
Method for preparing flexible and transparent conductive graphene membrane Download PDFInfo
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Abstract
The invention relates to a method for preparing a flexible and transparent conductive graphene membrane, belongs to the field of the science and technology of nanometer photoelectric materials and particularly relates to the preparation of a thermal reduction and oxidation graphene membrane at the temperature of 1,000 DEG C and technology for transferring the membrane onto a flexible substrate. The flexible and transparent conductive graphene membrane provided by the invention has the advantages of high electrical conductivity, high transmission of light, large-area preparation, rich raw materials, high material utilization ratio, simple preparation method, environmental protection and the like. The technology overcomes the defects of easy brittleness of the conventional indium tin oxide (ITO) and poor electrical conductivity of the conventional flexible conductive polymer membrane, is hopeful to prepare a novel flexible and transparent conductive membrane, is potentially applied to photoelectric functional apparatuses such as organic electroluminescent displays, organic electrical storages, organic solar cells and the like and is particularly applied to flexible photoelectric apparatuses.
Description
Technical field
The invention belongs to the nanometer photoelectronic material sciemtifec and technical sphere.Be specifically related to a kind of preparation of elevated temperature heat redox graphene film and be transferred to the technology of flexible substrate, in high-performance transparent conductive film and photoelectric functional device, tempting using value is arranged.
Technical background
The application widely that flexible transparent conductive film has in a lot of fields is such as the electrode of function elements such as radio frequency recognizing electronic label, flexible flat demonstration and lighting source, Electronic Paper, solar cell.Current, the most frequently used electrode material is based on the metal oxide of traditional inorganic material, such as ITO, IZO etc.Yet deficient day by day along with rare metal, price is expensive day by day, and its fragility characteristics have further limited their large-scale application, particularly Rou Xing organic photoelectric function element in the photoelectric functional devices field.Exploitation has abundant raw materials, and is cheap, the thin-film material that flexibility is good, transparent and conductivity is high, and economic interests and strategic importance are great.At present, have flexibility simultaneously concurrently, transparent and conducting function mainly contains conducting polymer and carbon nano-tube in the material of one.Relatively and the inorganic metal conductive film, the conventional conductive polymeric material is relatively poor relatively such as conductivity such as PANI, PPy.Though conductivity such as novel conductive polymer such as PEDOT:PSS is higher, its price height.The photoelectric properties of carbon nano-tube and mechanical performance are all good, are one of ideal materials of preparation compliant conductive film.But, the preparation of carbon nano-tube and purification technique complexity, separation difficulty poor efficiency still between metallicity and the semiconductive carbon nano tube has limited the large-scale application of carbon nano-tube film.
In recent years, Graphene has high mobility (20000～50000cm
2/ Vs), unique integer quantum hall effect, the research focus that good mechanical performance becomes people, the film of making based on Graphene becomes ideal conducting film of new generation.The preparation method of graphene film mainly contains method such as reduce behind heating SiC, epitaxial growth, chemical vapour deposition (CVD) and the oxidation filming, and wherein reduction technique has the extremely concern of company and research and development institution of efficient height, output is big, cost is low characteristics behind the oxidation filming.But graphene oxide film also exists the deficiency of poorly conductive, to the electric conductivity of graphene oxide film reduction can raising film.At present, the main method of reduction Graphene has hydrazine or NaBH
4Deng electronation and Optical Electro-Chemistry reduction, (conductivity is not higher than 10 but reduction effect is poor
3S/m), the poor factors such as (immersing in the solution) of potential safety hazard big (hydrazine severe toxicity) and quality of forming film has restricted it and has further developed.High-temperature thermal annealing has reduction effect, and good (conductivity can reach 10
5S/m has comparativity with graphite), advantages such as quality of forming film height, environment friendly and pollution-free and high efficiency, be one of Perfected process of preparation large-area high-quality graphene film.But the high temperature reduction graphene film needs its substrate high temperature resistant, generally is confined to SiO
2/ Si and quartz substrate, this has limited the preparation based on any substrate graphite film, particularly based on the preparation of flexible substrate film.So it is a urgent problem that exploitation has flexibility, transparent, high conductivity, large tracts of land and the low graphene film of price concurrently.
Summary of the invention
Technical problem: main purpose of the present invention is to propose a kind of method that shifts elevated temperature heat redox graphene conductive film.The film of this method preparation has that pliability is good, light transmission is high, conductivity is good, large-area preparation, the preparation method is simple and cost is low advantage.It has potential actual application value in high-performance flexible transparent photoelectric function element field.
Technical scheme: the preparation method of a kind of flexible and transparent conductive graphene membrane of the present invention comprises the preparation of high temperature reduction graphene oxide film and is transferred to the preparation process of flexible substrate;
Step 1: at hydrophily SiO
2/ Si substrate surface prepares graphene oxide film;
Step 2: the graphene oxide film to preparation carries out high temperature reduction, obtains the redox graphene conductive film, claims graphene film again;
Step 3: coat one deck polymetylmethacrylate protective layer on the surface of redox graphene conductive film, obtain the Graphene/SiO of protective mulch
2/ Si film is used for protective film in that to peel off transfer process injury-free;
Step 4: the redox graphene conductive film that will cover the PMMA protective layer is inserted SiO
2In the etching liquid, with the redox graphene conductive film from SiO
2/ Si substrate surface is peeled off;
Step 5: the graphene film that contains the PMMA protective layer that will peel off is transferred to the transparent flexible substrate surface;
Step 6: remove the PMMA protective layer on graphene film surface, obtain flexible and transparent graphene conductive film.
The component materials of described graphene oxide film is large stretch of graphene oxide, and the used substrate of preparation graphene oxide film is hydrophily SiO
2/ Si, wherein the hydrophilic treated mode is H2SO4: H2O2=3: 1 volume ratio, under 110 ℃ of conditions, boil and boil 1 hour; Prepare graphene oxide film by spin coating, LB self-assembling technique; The area of graphene oxide film equates that with Substrate Area the thickness of film can be controlled by the number of times or the LB self assembly number of times of spin coating.
When graphene oxide film was reduced by high-temperature heat treatment, the temperature of film reduction was between 800 ℃～1100 ℃, and the condition of film reduction is the mist of argon gas and hydrogen, and heat treatment period is about 2 hours, the redox graphene conductive film.
Coat one deck PMMA protective layer on the surface of redox graphene conductive film, when the redox graphene film surface is protected processing, need heating to make its curing behind the coating PMMA layer, curing temperature is between 150 ℃～180 ℃.
Graphene/SiO with protective mulch
2/ Si film is inserted SiO
2In the etching liquid, heating is peeled off; Etching solution is chosen a kind of in KOH, NaOH or HF; Heating-up temperature is between 70 ℃～80 ℃.
The method of the graphene film of peeling off that contains the PMMA protective layer being transferred to the flexible substrate surface is: the matcoveredn graphene film that is coated with that at first will be stripped from is transferred in the deionized water; with any flexible substrate of polyethylene terephtalate film is picked up then, dry up with nitrogen current at last.
The side of removing the PMMA protective layer on graphene film surface is: the film after will shifting is put into acetone, is heated to 40 ℃～60 ℃, reacts 1～3 hour; Take out then and be reentered in the clean acetone, repeat the said process several times, all remove until the PMMA of film surface; Or utilize Plasma with PMMA layer etching and remove.
Beneficial effect: the graphene oxide film of elevated temperature heat reduction successfully obtains flexible and transparent high conductivity graphene film through after shifting among the present invention, this film conductivity reach～10
5S/m, it is worth far above other chemical reduction method of the same type.Simultaneously, high conductivity makes this film rectangular resistance 10
3During magnitude, its light transmission is about 80% when 550nm, and this is the optimal value of redox graphene film.In addition, this graphene conductive film graphite that has drawn from, abundant raw materials, preparation process is simple, environmental protection and utilance height.To sum up advantage makes this flexible and transparent conductive graphene that tempting application prospect be arranged.
Major advantage of the present invention is:
1. conductivity is excellent;
2. light transmission height;
3. pliability is good;
4. abundant raw materials and utilance height.
5. the simple and environmental protection of preparation process.
Description of drawings
Fig. 1. based on the light transmittance and the square resistance relation of quartz substrate graphene film.
Fig. 2. based on the light transmittance and the square resistance relation of PET substrate graphene film
Embodiment
The preparation method of flexible and transparent conductive graphene membrane of the present invention comprises the preparation of high temperature reduction graphene oxide film and is transferred to the technology of flexible substrate.
The thin-film material of preparation graphene oxide film is large stretch of graphene oxide among the present invention, and film-substrate is SiO
2/ Si, the method for preparing graphene oxide film comprises spin coating and LB self assembly etc., and the area of film depends on the size of substrate, and the thickness of film can be regulated and control by film technique.
The method of reducing of prepared graphene oxide film is a high-temperature thermal annealing, and its condition is under 800 ℃～1100 ℃ temperature, adopts the mist of argon gas and hydrogen to serve as protective gas, and heat treatment 2 hours obtains conductive graphene membrane.
Prepared redox graphene film is before transfer; at first processing is being protected on the graphene film surface; the protection processing mode is selected from any one in coating PMMA layer and the PDMS seal, and wherein the PMMA layer needs 150 ℃～180 ℃ heating to make its curing after applying.To be coated with then to heat in the matcoveredn graphene film immersion etching solution and peel off, etching solution is chosen any one in KOH, NaOH or HF, and heating-up temperature is between 70 ℃～80 ℃, and the Graphene that acquisition has protective layer freely supports film.
The prepared transfer process that has the protective layer graphene film is: the protective layer graphene film that has that will be stripped from earlier is transferred in the deionized water, film is picked up and dry up with nitrogen current with any flexible substrate such as PET then.Soak with 40 ℃～60 ℃ acetone soln at last and have PMMA protective layer graphene film (or handle with Plasma); reacted 1～3 hour; take out and be reentered in the clean acetone; repeat said process several times (generally greater than 3 times); PMMA until film surface all removes, and obtains flexible and transparent conductive graphene membrane.
In order to understand the content of patent of the present invention better, further specify below by instantiation.But these embodiment do not limit the present invention, and those skilled in the art make some nonessential improvement and adjustment according to the content of foregoing invention, all belong to protection range of the present invention.
Comprise that specifically step is as follows:
1) preparation graphene oxide film;
2) high temperature reduction graphene oxide film;
3) coat protective layer on the surface of redox graphene film;
4) film that has protective layer is peeled off;
5) remove the protective layer of film surface with acetone or Plasma.
Wherein, graphene oxide film prepares by the spin coating mode; The condition of high temperature reduction graphene oxide film is that argon gas and hydrogen mixed gas are protected following 1000 ℃ of heating 2 hours; Thinfilm protective coating is selected the PMMA layer for use; Degrading solution is that concentration is the NaOH aqueous solution of 2M; Flexible substrate is selected the PET film for use; At last with acetone with PMMA layer etching.
Embodiment 1: the preparation method of flexible and transparent conductive graphene membrane.
Graphene oxide preparation: with 2.5g graphite, 1.9g NaNO
3, 11.5g KMnO
4And the dense H of 85ml
2SO
4Mix the first ice bath in back and stirred 1 hour, stirred 2 days under the room temperature then, add the 250ml 5wt% concentrated sulfuric acid and 20ml 30wt%H at last
2O
2Continue to stir 2 days and centrifugal, washed with de-ionized water, so repeat 8 times and obtain graphene oxide.
The preparation of graphene oxide film and reduction: at first, the graphene oxide of preparation is removed the unstripped particle of minute quantity through the ultrasonic graphene oxide solution that obtains disperseing by the 3000rpm centrifugal treating, and centrifugation time is 30min.Secondly, centrifugal once more to above-mentioned centrifugal upper solution, rotating speed is 4000rpm, and the time is 30min, obtains containing the deposit of large stretch of graphene oxide, and it is scattered in the methanol solution, is used to prepare graphene oxide film.Before the film forming, SiO
2/ Si substrate need carry out hydrophilic treated, carries out respectively promptly that deionized water ultrasonic (30min), the concentrated sulfuric acid/hydrogen peroxide mixed liquor boil and boil (volume ratio 1: 1,110 ℃ heating 1 hour), deionized water ultrasonic (30min) is handled.Secondly, substrate prepares the graphite oxide film by spin coating method after hydrophilic treated, and rotating speed is 4000rpm, and film thickness drips the number of times control of solution during by spin coating.After the spin-coating film, under argon gas and hydrogen mixed gas atmosphere, film is heated to 1000 ℃ of annealing 2 hours, makes its redox graphene film that changes conduction into (being called graphene film again), be used to peel off and shift.Be similar to said process, preparation is based on the transparent conductive graphene membrane of quartz substrate, with it and do contrast based on the transparent conductive graphene membrane of PET.
The peeling off and shifting of redox graphene film: before peeling off, based on SiO
2Surperficial spin coating one deck PMMA (Mw:996000 of/Si substrate graphene film; Wt5%, anisole) layer, then under 170 ℃ with its curing, it is impaired at stripping process to be used for protective film.After the curing, the conductive film that will have PMMA immerses in the NaOH aqueous solution of 2M, is heated to 80 ℃, peel off fully from substrate until the graphene film that has PMMA, and it is transferred in the deionized water, with PET it is picked up then, and film is dried up with nitrogen current.At last, in the acetone soln with 50 ℃ of film immersions, reacted 2 hours, change acetone soln then, repeat 3 times, remove the PMMA on graphene film surface, obtain transparent conductive graphene membrane based on PET.
Claims (7)
1. the preparation method of a flexible and transparent conductive graphene membrane is characterized in that this method comprises the preparation of high temperature reduction graphene oxide film and is transferred to the preparation process of flexible substrate;
Step 1: at hydrophily SiO
2/ Si substrate surface prepares graphene oxide film;
Step 2: the graphene oxide film to preparation carries out high temperature reduction, obtains the redox graphene conductive film, claims graphene film again;
Step 3: coat one deck polymetylmethacrylate protective layer on the surface of redox graphene conductive film, obtain the Graphene/SiO of protective mulch
2/ Si film is used for protective film in that to peel off transfer process injury-free;
Step 4: the redox graphene conductive film that will cover the PMMA protective layer is inserted SiO
2In the etching liquid, with the redox graphene conductive film from SiO
2/ Si substrate surface is peeled off;
Step 5: the graphene film that contains the PMMA protective layer that will peel off is transferred to the transparent flexible substrate surface;
Step 6: remove the PMMA protective layer on graphene film surface, obtain flexible and transparent graphene conductive film.
2. the preparation method of flexible and transparent conductive graphene membrane according to claim 1, the component materials that it is characterized in that described graphene oxide film is large stretch of graphene oxide, the used substrate of preparation graphene oxide film is hydrophily SiO
2/ Si, wherein the hydrophilic treated mode is H2SO4: H2O2=3: 1 volume ratio, under 110 ℃ of conditions, boil and boil 1 hour; Prepare graphene oxide film by spin coating, LB self-assembling technique; The area of graphene oxide film equates that with Substrate Area the thickness of film can be controlled by the number of times or the LB self assembly number of times of spin coating.
3. the preparation method of flexible and transparent conductive graphene membrane according to claim 1, when it is characterized in that graphene oxide film is reduced by high-temperature heat treatment, the temperature of film reduction is between 800 ℃～1100 ℃, the condition of film reduction is the mist of argon gas and hydrogen, heat treatment period is about 2 hours, the redox graphene conductive film.
4. the preparation method of flexible and transparent conductive graphene membrane according to claim 1; it is characterized in that coating one deck PMMA protective layer on the surface of redox graphene conductive film; when the redox graphene film surface is protected processing; need heating to make its curing after applying the PMMA layer, curing temperature is between 150 ℃～180 ℃.
5. the preparation method of flexible and transparent conductive graphene membrane according to claim 1 is characterized in that the Graphene/SiO with protective mulch
2/ Si film is inserted SiO
2In the etching liquid, heating is peeled off; Etching solution is chosen a kind of in KOH, NaOH or HF; Heating-up temperature is between 70 ℃～80 ℃.
6. the preparation method of flexible and transparent conductive graphene membrane according to claim 1; it is characterized in that the graphene film that contains the PMMA protective layer that will peel off transfers to the method on flexible substrate surface and be: the matcoveredn graphene film that is coated with that at first will be stripped from is transferred in the deionized water; with any flexible substrate of polyethylene terephtalate film is picked up then, dry up with nitrogen current at last.
7. the preparation method of flexible and transparent conductive graphene membrane according to claim 1, the side that it is characterized in that removing the PMMA protective layer on graphene film surface is: the film after will shifting is put into acetone, is heated to 40 ℃～60 ℃, reacts 1～3 hour; Take out then and be reentered in the clean acetone, repeat the said process several times, all remove until the PMMA of film surface; Or utilize Plasma with PMMA layer etching and remove.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101503174A (en) * | 2009-03-18 | 2009-08-12 | 北京大学 | Method for cutting graphite alkene by titanium dioxide photocatalysis |
| CN101694474A (en) * | 2009-10-22 | 2010-04-14 | 浙江大学 | Nano-pore electric sensor |
-
2010
- 2010-06-21 CN CN 201010204706 patent/CN101901640A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101503174A (en) * | 2009-03-18 | 2009-08-12 | 北京大学 | Method for cutting graphite alkene by titanium dioxide photocatalysis |
| CN101694474A (en) * | 2009-10-22 | 2010-04-14 | 浙江大学 | Nano-pore electric sensor |
Non-Patent Citations (1)
| Title |
|---|
| 《Chemstry of Materials》 20091111 Ching-Yuan Su.etc Electrical and Spectroscopic Characterizations of Ultra-Large Reduced Graphene Oxide Monolayer 5674-5680 1-7 第21卷, 2 * |
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| CN102543270A (en) * | 2012-01-31 | 2012-07-04 | 苏州大学 | Grapheme-based composite film and preparation method therefor, conductive electrode and preparation method therefor |
| CN102543270B (en) * | 2012-01-31 | 2014-10-22 | 苏州大学 | Grapheme-based composite film and preparation method therefor, conductive electrode and preparation method therefor |
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