CN101895002A - High-frequency circuit, low-noise frequency transformer and antenna assembly - Google Patents

High-frequency circuit, low-noise frequency transformer and antenna assembly Download PDF

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Publication number
CN101895002A
CN101895002A CN2010101828660A CN201010182866A CN101895002A CN 101895002 A CN101895002 A CN 101895002A CN 2010101828660 A CN2010101828660 A CN 2010101828660A CN 201010182866 A CN201010182866 A CN 201010182866A CN 101895002 A CN101895002 A CN 101895002A
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China
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ground connection
signal
type surface
frequency
hardware
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Chinese (zh)
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仁部正之
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Sharp Corp
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Sharp Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/02Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08Microstrips; Strip lines
    • H01P3/081Microstriplines

Abstract

The present invention relates to high-frequency circuit, low-noise frequency transformer and antenna assembly.High-frequency circuit (101) comprising: the first ground connection figure (16), and this first ground connection figure is arranged at second first type surface (S2) of medium substrate (13); Signal graph (11), this signal graph are arranged at first first type surface (S1) of medium substrate (13), constitute microstrip line with the medium substrate (13) and the first ground connection figure (16); The second ground connection figure (15), this second ground connection figure is arranged at first first type surface (S1), with signal graph (11) devices spaced apart setting; Hardware (12), this hardware is electrically connected with the second ground connection figure (15), and to separate the gap relative with signal graph (11); And metal shell, this metal shell is electrically connected with the first ground connection figure (16) and the second ground connection figure (15), accommodates medium substrate (13), microstrip line, reaches hardware (12).

Description

High-frequency circuit, low-noise frequency transformer and antenna assembly
Technical field
The present invention relates to high-frequency circuit, low-noise frequency transformer and antenna assembly, particularly use high-frequency circuit, low-noise frequency transformer and the antenna assembly of microstrip line.
Background technology
LNB (low-noise frequency transformer: Low Noise Block Down Converter) be installed on the antenna that is called as outdoor unit of two-way satellite receive-transmit system.LNB is RF (Radio Frequency: radio frequency) signal by the faintness wave that antenna receives from satellite, the RF signal that is received is carried out low noise amplify, and be intermediate frequency (IF (Intermediate Frequency: frequency intermediate frequency)) its frequency conversion.Then, LNB outputs to indoor unit with low noise and IF signal with enough level.Utilize such antenna and LNB, the user can utilize the terminals such as TV set device that are connected with indoor unit, the receiving satellite broadcast service.
Each circuit of LNB comprises: for example be formed at the microstrip line of medium substrate and be installed on the electronic device of medium substrate.The shaped design of microstrip line becomes to make it have suitable resistance.Impedance is by the dielectric constant and the decision of substrate (base material) thickness of medium substrate.
Figure 19 is the figure of the microstrip line impedance variation of expression when substrate thickness is changed.Figure 20 is the figure with Figure 19 curveization.Figure 21 is the figure of the microstrip line impedance variation of expression when the dielectric constant of substrate is changed.Figure 22 is the figure with Figure 21 curveization.
In Figure 19 to Figure 22, substrate uses the RO4233 of Rogers (Rogers) company.The dielectric constant of this substrate when 10GHz is 3.33, and the dielectric loss angle tangent when 10GHz is 0.0026.In addition, the thickness that is arranged at the signal graph of the microstrip line on this substrate is 0.036mm.In addition, the distance H u from microstrip line to the case top of accommodating microstrip line is 10mm, and the distance W L from microstrip line to this housing wall is 1mm.The characteristic impedance of this microstrip line is made as 50 Ω, and the design load of live width is 1.1mm.In addition, f0 is the frequency of the signal that is used to measure.
With reference to Figure 19 and Figure 20, by making substrate thickness H attenuation, the impedance Z 0 of microstrip line diminishes.
With reference to Figure 21 and Figure 22, by improving substrate dielectric constant ε r, the impedance Z 0 of microstrip line diminishes.
Figure 23 be illustrated under the situation that signal frequency f0 is 11.725GHz, the figure of the design size of 50 Ω microstrip lines when changing substrate thickness.Figure 24 be illustrated under the situation that signal frequency f0 is 1.55GHz, the figure of the design size of 50 Ω microstrip lines when changing substrate thickness.Figure 25 is the figure with the relation curveization of Figure 23 and substrate thickness H shown in Figure 24 and live width W.Figure 26 A is the figure with the relation curveization of substrate thickness H shown in Figure 23 and graphics area S.Figure 26 B is the figure with the relation curveization of substrate thickness H shown in Figure 24 and graphics area S.
As Figure 19 and illustrated in fig. 20, by making substrate thickness H attenuation, the impedance Z 0 of microstrip line diminishes.Thereby, as shown in Figure 25, by making substrate thickness H attenuation, thereby can realize 50 identical Ω microstrip lines with littler graphic width.In addition, shown in Figure 26 A and Figure 26 B like that, by making substrate thickness H attenuation, thereby can realize 50 identical Ω microstrip lines with littler graphics area.
Figure 27 is the figure of the design size of 50 Ω microstrip lines when being illustrated under the situation that signal frequency f0 is 11.725GHz, changing substrate dielectric constant ε r.Figure 28 is the figure of the design size of 50 Ω microstrip lines when being illustrated under the situation that signal frequency f0 is 1.55GHz, changing substrate dielectric constant ε r.Figure 29 is the figure with the relation curveization of Figure 27 and substrate dielectric constant ε r shown in Figure 28 and live width W.Figure 30 A is the figure with the relation curveization of substrate dielectric constant ε r shown in Figure 27 and graphics area S.Figure 30 B is the figure with the relation curveization of substrate dielectric constant ε r shown in Figure 28 and graphics area S.
As Figure 21 and illustrated in fig. 22, by improving substrate dielectric constant ε r, the impedance Z 0 of microstrip line diminishes.Thereby, as shown in Figure 29,, thereby can realize 50 identical Ω microstrip lines with littler graphic width by raising substrate dielectric constant ε r.In addition, shown in Figure 30 A and Figure 30 B like that, by improving substrate dielectric constant ε r, thereby can realize 50 identical Ω microstrip lines with littler graphics area.
Open in the flat 06-291527 communique (patent documentation 2) at Japanese patent laid-open 04-282901 communique (patent documentation 1) and spy, disclosed the technology of utilizing said method to try hard to realize the microstrip line miniaturization.According to patent documentation 1 and 2, the medium that dielectric constant is higher than the dielectric constant of this medium substrate is set on medium substrate, on this medium, form microstrip line.
Particularly, in patent documentation 1, disclosed following structure.That is,, be formed with dielectric film, utilize film to be formed with microstrip line thereon as insulant comprising microstrip line, insulant, reaching in the high-frequency circuit of ground connection.In addition, in patent documentation 2, disclosed mini strip line resonator with following structure.That is, be formed with conductor layer as ground plane, be formed with banded electric conductor circuit in the another side of medium substrate, thereby constitute microstrip line in the one side of medium substrate.Be cut to predetermined length by electric conductor circuit, thereby form resonator this microstrip line.Then, in the zone that comprises above-mentioned resonator formation position that is present in the dielectric member between above-mentioned conductor layer and the above-mentioned electric conductor circuit, be formed with the zone of dielectric constant greater than the dielectric constant of above-mentioned medium substrate.
In addition, open 2000-278005 communique (patent documentation 3) and the spy opens in the 2008-35336 communique (patent documentation 4) the Japan Patent spy, in medium substrate, with the face of the opposite side of face of the conductor fig that is formed with microstrip line the cavity is being set, thereby is at random setting the substrate effective dielectric constant of hollow sectors.Thus.Can adjust the impedance of microstrip line.
Particularly, in patent documentation 3, disclosed following structure.That is, the distributed constant element comprises: medium substrate, and above-mentioned medium substrate is disposed on the matrix across first space layer, has specific figure on the surface; And screen, above-mentioned screen is disposed on the zone that covers above-mentioned special pattern across second space layer.To at least one side's filled media material of above-mentioned first space layer and above-mentioned second space layer, the dielectric material that is filled into above-mentioned first space layer is identical or different with the dielectric material that is filled into above-mentioned second space layer.In addition, in patent documentation 4, disclosed following structure.That is, high-frequency circuit board comprises: semiconductor element; The impedance matching circuit that is connected with this semiconductor element; The signal line that is connected with this impedance matching circuit; Be formed with the medium substrate of this signal line and above-mentioned impedance matching circuit on the surface; And blank part, above-mentioned blank part is formed at the back side and the corresponding part of part that is formed with above-mentioned impedance matching circuit of this medium substrate.
In addition, in Japanese patent laid-open 8-78579 communique (patent documentation 5), disclosed the erecting device that high frequency is used.This erecting device comprises the encapsulation cover plate of conductivity and is accommodated in high-frequency circuit board in this cover plate.Be formed with the high frequency wiring on the two sides of substrate.Two high frequency wirings interconnect by the connecting wiring that is arranged at the substrate circumference.With the interval between the inner surface of the lateral circle surface of substrate and encapsulation cover plate, be that interval between the inner surface of connecting wiring and encapsulation cover plate is set at predetermined value.Thus, can adjust the characteristic impedance of connecting wiring.
Yet,, have following variety of issue always realizing in the method for microstrip line miniaturization by attenuate substrate thickness or raising substrate dielectric constant like that.
At first, there is boundary in the method for attenuate substrate thickness on manufacturing technology, and in addition, substrate attenuation meeting causes the strength reduction of substrate.Therefore, for substrate thickness is thinned to certain more than the value, not only technically very difficult especially qualitatively.
In addition, in the method for using the higher substrate of dielectric constant, wish to have the dielectric loss angle tangent identical with presently used medium substrate.That is, if dielectric loss angle tangent increases, the loss of the signal that then is transmitted increases, and therefore needs the less substrate of dielectric loss angle tangent in high-frequency circuit board.Yet the kind of material with high-k and low dielectric loss angle tangent is few, and price is also higher.
In order to address these problems, need to find that a kind of use is made of presently used dielectric material and have the substrate of the thickness more than a certain value, reduce the method for dimension of microstrip line simultaneously.
Summary of the invention
The present invention finishes in order to address the above problem, its purpose be to provide a kind of can be easily and realize high-frequency circuit, low-noise frequency transformer, and the antenna assembly of the miniaturization of microstrip line at low cost.
In order to address the above problem, the related high-frequency circuit of one aspect of the present invention comprises: medium substrate, above-mentioned medium substrate have first first type surface and are arranged at second first type surface of an opposite side of above-mentioned first first type surface; The first ground connection figure, the above-mentioned first ground connection figure is arranged at above-mentioned second first type surface; Signal graph, above-mentioned signal graph are arranged at above-mentioned first first type surface, constitute microstrip line with above-mentioned medium substrate and the above-mentioned first ground connection figure; The second ground connection figure, the above-mentioned second ground connection figure is arranged at above-mentioned first first type surface, is provided with above-mentioned signal graph devices spaced apart; Hardware, above-mentioned hardware is electrically connected with the above-mentioned second ground connection figure, and to separate the gap relative with above-mentioned signal graph; And metal shell, above-mentioned metal shell is electrically connected with above-mentioned first ground connection figure and the above-mentioned second ground connection figure, accommodates above-mentioned medium substrate, above-mentioned microstrip line, reaches above-mentioned hardware.
Preferably be arranged to make it to surround above-mentioned signal graph above-mentioned hardware, along the bearing of trend extension of above-mentioned signal graph.
Preferably above-mentioned hardware and above-mentioned metal shell are formed as one.
Preferably make above-mentioned metal shell have notch part, above-mentioned notch part is close to the above-mentioned second ground connection figure, forms the space that covers above-mentioned signal graph, and above-mentioned hardware is made of above-mentioned notch part.
In order to address the above problem, the related low-noise frequency transformer of one aspect of the present invention comprises: frequency mixer, above-mentioned frequency mixer are used for the wireless signal that receives is carried out frequency conversion; And high-frequency circuit, above-mentioned high-frequency circuit is used to transmit above-mentioned wireless signal or utilizes above-mentioned frequency mixer to carry out the signal of frequency conversion, above-mentioned high-frequency circuit comprises: medium substrate, above-mentioned medium substrate have first first type surface and are arranged at second first type surface of an opposite side of above-mentioned first first type surface; The first ground connection figure, the above-mentioned first ground connection figure is arranged at above-mentioned second first type surface; Signal graph, above-mentioned signal graph are arranged at above-mentioned first first type surface, constitute microstrip line with above-mentioned medium substrate and the above-mentioned first ground connection figure; The second ground connection figure, the above-mentioned second ground connection figure is arranged at above-mentioned first first type surface, is provided with above-mentioned signal graph devices spaced apart; Hardware, above-mentioned hardware is electrically connected with the above-mentioned second ground connection figure, and to separate the gap relative with above-mentioned signal graph; And metal shell, above-mentioned metal shell is electrically connected with above-mentioned first ground connection figure and the above-mentioned second ground connection figure, accommodates above-mentioned medium substrate, above-mentioned microstrip line, reaches above-mentioned hardware.
In order to address the above problem, the related antenna assembly of one aspect of the present invention comprises: antenna, and above-mentioned antenna receives wireless signal; And low-noise frequency transformer, above-mentioned low-noise frequency transformer amplifies and carries out frequency conversion to above-mentioned wireless signal, and above-mentioned low-noise frequency transformer comprises: frequency mixer, above-mentioned frequency mixer are used for above-mentioned wireless signal is carried out frequency conversion; And high-frequency circuit, above-mentioned high-frequency circuit is used to transmit above-mentioned wireless signal or utilizes above-mentioned frequency mixer to carry out the signal of frequency conversion, above-mentioned high-frequency circuit comprises: medium substrate, above-mentioned medium substrate have first first type surface and are arranged at second first type surface of an opposite side of above-mentioned first first type surface; The first ground connection figure, the above-mentioned first ground connection figure is arranged at above-mentioned second first type surface; Signal graph, above-mentioned signal graph are arranged at above-mentioned first first type surface, constitute microstrip line with above-mentioned medium substrate and the above-mentioned first ground connection figure; The second ground connection figure, the above-mentioned second ground connection figure is arranged at above-mentioned first first type surface, is provided with above-mentioned signal graph devices spaced apart; Hardware, above-mentioned hardware is electrically connected with the above-mentioned second ground connection figure, and to separate the gap relative with above-mentioned signal graph; And metal shell, above-mentioned metal shell is electrically connected with above-mentioned first ground connection figure and the above-mentioned second ground connection figure, accommodates above-mentioned medium substrate, above-mentioned microstrip line, reaches above-mentioned hardware.
According to the present invention, can be easily and realize the miniaturization of microstrip line at low cost.
About above-mentioned and other purpose of the present invention, feature, aspect, and advantage, will be from following with reference to understanding that accompanying drawing is understood with relevant detailed description of the present invention.
Description of drawings
Fig. 1 is the structure chart with two-way satellite receive-transmit system of the LNB that comprises the related high-frequency circuit of embodiments of the present invention 1.
Fig. 2 is the functional block diagram that comprises the LNB of the related high-frequency circuit of embodiments of the present invention 1.
Fig. 3 is the stereogram of the structure of the related high-frequency circuit of expression embodiments of the present invention 1.
Fig. 4 A is the cutaway view of the structure of the related high-frequency circuit of expression embodiments of the present invention 1.
Fig. 4 B is the vertical view of the structure of the related high-frequency circuit of expression embodiments of the present invention 1.
The figure of the impedance variation of microstrip line when Fig. 5 is the distance W L that represents to change respectively between the wall portion of distance H u between the top of signal graph 11 and hardware 12 and signal graph 11 and hardware 12.
Fig. 6 A is the curve chart when changing distance H u among Fig. 5.
Fig. 6 B is the curve chart when changing distance W L among Fig. 5.
Fig. 7 A be illustrated under the situation that signal frequency f0 is 11.725GHz, the figure of the design size of 50 Ω microstrip lines when changing distance H u and distance W L respectively and changing.
Fig. 7 B be illustrated under the situation that signal frequency f0 is 1.55GHz, the figure of the design size of 50 Ω microstrip lines when changing distance H u and distance W L respectively and changing.
Fig. 8 A is the figure with distance H u shown in Fig. 7 A and Fig. 7 B and the relation curveization between the live width W.
Fig. 8 B is the figure with distance W L shown in Fig. 7 A and Fig. 7 B and the relation curveization between the live width W.
Fig. 9 A is to be the figure of the relation curveization of distance H u shown in Fig. 7 A under the situation of 11.725GHz and graphics area with signal frequency f0.
Fig. 9 B is to be the figure of the relation curveization of distance W L shown in Fig. 7 A under the situation of 11.725GHz and graphics area with signal frequency f0.
Figure 10 A is to be the figure of the relation curveization of distance H u shown in Fig. 7 B under the situation of 1.55GHz and graphics area with signal frequency f0.
Figure 10 B is to be the figure of the relation curveization of distance W L shown in Fig. 7 B under the situation of 1.55GHz and graphics area with signal frequency f0.
Figure 11 is the stereogram of the structure of the related high-frequency circuit of expression embodiments of the present invention 2.
Figure 12 is the cutaway view of the structure of the related high-frequency circuit of expression embodiments of the present invention 2.
Figure 13 is the stereogram of the structure of the related high-frequency circuit of expression embodiments of the present invention 3.
Figure 14 is the cutaway view of the structure of the related high-frequency circuit of expression embodiments of the present invention 3.
Figure 15 is the stereogram of the embodiment of the related high-frequency circuit of expression embodiments of the present invention 3.
Figure 16 is the cutaway view of the embodiment of the related high-frequency circuit of expression embodiments of the present invention 3.
Figure 17 is the figure that passes through characteristic of the microstrip line among expression Figure 15 and the embodiment shown in Figure 16.
To be expression unloaded the figure that passes through characteristic of the microstrip line under the situation of housing 34 from the high-frequency circuit of Figure 15 and embodiment shown in Figure 16 to Figure 18.
The figure of the impedance variation of microstrip line when Figure 19 is expression change substrate thickness.
Figure 20 is the figure with Figure 19 curveization.
Figure 21 is the figure of expression impedance variation of microstrip line when changing the dielectric constant of substrate.
Figure 22 is the figure with Figure 21 curveization.
Figure 23 be illustrated under the situation that signal frequency f0 is 11.725GHz, the figure of the design size of 50 Ω microstrip lines when changing substrate thickness.
Figure 24 be illustrated under the situation that signal frequency f0 is 1.55GHz, the figure of the design size of 50 Ω microstrip lines when changing substrate thickness.
Figure 25 is the figure with the relation curveization of Figure 23 and substrate thickness H shown in Figure 24 and live width W.
Figure 26 A is the figure with the relation curveization of substrate thickness H shown in Figure 23 and graphics area S.
Figure 26 B is the figure with the relation curveization of substrate thickness H shown in Figure 24 and graphics area S.
Figure 27 is the figure of the design size of 50 Ω microstrip lines when being illustrated under the situation that signal frequency f0 is 11.725GHz, changing substrate dielectric constant ε r.
Figure 28 is the figure of the design size of 50 Ω microstrip lines when being illustrated under the situation that signal frequency f0 is 1.55GHz, changing substrate dielectric constant ε r.
Figure 29 is the figure with the relation curveization of Figure 27 and substrate dielectric constant ε r shown in Figure 28 and live width W.
Figure 30 A is the figure with the relation curveization of substrate dielectric constant ε r shown in Figure 27 and graphics area S.
Figure 30 B is the figure with the relation curveization of substrate dielectric constant ε r shown in Figure 28 and graphics area S.
Embodiment
Below, use the description of drawings embodiments of the present invention.In addition, part identical or suitable among the figure is marked with same numeral, no longer repeats its explanation.
(execution mode 1)
(two-way satellite receive-transmit system)
Fig. 1 is the structure chart with two-way satellite receive-transmit system of the LNB that comprises the related high-frequency circuit of embodiments of the present invention 1.
Orthomode transducer) 4, LNB (LowNoise Block down converter: low-noise frequency transformer) 5, receive with coaxial cable 6, indoor unit 7, send with coaxial cable 8, and reflector 9 with reference to Fig. 1, two-way satellite receive-transmit system (antenna assembly) 201 comprises: parabolic antenna 2, horn antenna 3, OMT (Orthogonal Mode Transfer:.
The RF signal (wireless signal) that sends from two-way artificial satellite 1 is converged by parabolic antenna 2.Parabolic antenna 2 is also referred to as " outdoor unit " with respect to indoor unit 7.The RF signal that is converged by parabolic antenna 2 is further converged by horn antenna 3, sends to OMT4.OMT4 carries out partial wave according to the orthogonal polarization wave line of propagation to the RF signal that horn antenna 3 sends.The RF signal transformation that LNB5 will send via OMT4 from horn antenna 3 is low noise and the (IntermediateFrequency: signal intermediate frequency) of the IF with enough level.Be sent to indoor unit (IDU) 7 by receiving with coaxial cable 6 from the signal of LNB5 output.
On the other hand, the signal from indoor unit 7 outputs is sent to transmitting device 9 by sending with coaxial cable 8.Transmitting device 9 will be the RF signal with enough level by sending the IF signal transformation of sending with coaxial cable 8., send via OMT4, horn antenna 3, and parabolic antenna 2 from the RF signal of transmitting device 9 output to two-way artificial satellite 1.
Utilize this two-way satellite receive-transmit system 201, the user can utilize terminals such as the not shown television set that is connected with indoor unit 7 and computer, receives the two-way communication service of so-called satellite broadcasting and network connection service.
(LNB)
Fig. 2 is the functional block diagram that comprises the LNB of the related high-frequency circuit of embodiments of the present invention 1.
With reference to Fig. 2, LNB5 has the structure of an output of two inputs, comprising: incoming wave conduit 60; LNA (Low Noise Amplifier: low noise amplifier) 61; BPF (Band Pass Filter: band pass filter) 62; Frequency mixer 63; Media resonant oscillator (DRO:Dielectric ResonatorOscillator :) 64,65; IF amplifier 66; Power control circuit 69; And LPF (Low Pass Filter: low pass filter) 71.
LNA61 comprises HEMT (High Electron Mobility Transistor: High Electron Mobility Transistor) 61V, HEMT61H and HEMT61A.LPT71 comprises inductor 67 and capacitor 68.
The frequency that is input to incoming wave conduit 60 is that the input signal of 10.7GHz to 12.75GHz is set at V polarized waves in the incoming wave conduit 60 and reflects excellent 60R and be divided into V polarized wave signal and H polarized wave signal.The V polarized wave signal is received by the antenna detector 60V in the incoming wave conduit 60, is sent to the HEMT61V among the LNA61.The H polarized wave signal is received by the antenna detector 60H in the incoming wave conduit 60, is sent to the HEMT61H among the LNA61.LNA61 is based on the control of power control circuit 69, a certain side of V polarized wave signal and H polarized wave signal carried out low noise amplify, and outputs to BPF62.That is, the HEMT61V among the LNA61 is when receiving the V polarized wave signal, and the power supply that receives from power control circuit 69 provides, and the V polarized wave signal is carried out low noise amplification and output.On the other hand, when receiving the H polarized wave signal, be stopped owing to the power supply from power control circuit 69 provides, so HEMT61V does not carry out above-mentioned processing.In addition, the HEMT61H among the LNA61 is when receiving the H polarized wave signal, and the power supply that receives from power control circuit 69 provides, and the H polarized wave signal is carried out low noise amplification and output.On the other hand, when receiving the V polarized wave signal, be stopped owing to the power supply from power control circuit 69 provides, so HEMT61H does not carry out above-mentioned processing.BPF62 only makes that desirable frequency band passes through in the signal of input, and removes the signal of picture frequency band.Signal by BPF62 is input to frequency mixer 63.
The frequency that DRO64 generation low-frequency band is used is the oscillator signal of 9.75GHz, outputs to frequency mixer 63.In addition, the oscillator signal of the frequency 10.6GHz that DRO65 generation high frequency band is used outputs to frequency mixer 63.
Power control circuit 69 does not provide power supply to DRO64 when receiving low band signal, stops to provide power supply to DRO65.In addition, power control circuit 69 does not provide power supply to DRO65 when receiving high-frequency band signals, stops to provide power supply to DRO64.Thus, according to the switching between low-frequency band and the high frequency band, only from a certain side's outputting oscillation signal of DRO64 or DRO65.
The oscillator signal that frequency mixer 63 receives from DRO64 or DRO65 when the selective reception low band signal, is that frequency is the IF signal of 905MHz to 1950MHz with the signal frequency conversion from BPF62 that receives.In addition, frequency mixer 63 is that frequency is the IF signal of 1100MHz to 2150MHz with the signal frequency conversion from BPF62 that receives when the selective reception high-frequency band signals.
IF amplifier 66 has suitable noise characteristic and gain characteristic, and the IF signal from frequency mixer 63 that receives is amplified and outputs to lead-out terminal 70.
In addition, lead-out terminal 70 is connected with television receiver as receiver, thereby can watches the broadcast program of low-frequency band and high frequency band.
Power control circuit 69 is accepted providing of Dc bias and switching signal by LPF71.In addition, power control circuit 69 is selected V polarized wave signal or H polarized wave signal based on the switching signal from receiver, and as mentioned above, the control power supply offers HEMT61V and HEMT61H.In addition, power control circuit 69 is selected low band signal or high-frequency band signals based on the switching signal from receiver, and as mentioned above, the control power supply offers DRO64 and DRO65.Herein, under the situation of expression V polarized wave signal, the direct voltage of switching signal is 13V from the switching signal of receiver, and under the situation of expression H polarized wave signal, the direct voltage of switching signal is 17V.In addition, under the situation of expression high-frequency band signals, be the pulse signal of 22kHz, under the situation of expression low band signal, for having only signal without direct current component from the switching signal of receiver.In addition, power control circuit 69 provides power supply to HEMT61A, frequency mixer 63, and IF amplifier 66.
In addition, because LPF71 only makes the signal of low-frequency band pass through, so power control circuit 69 is not accepted the IF signal of IF amplifier 66 outputs.
(high-frequency circuit)
Fig. 3 is the stereogram of the structure of the related high-frequency circuit of expression embodiments of the present invention 1.Fig. 4 A is the cutaway view of the structure of the related high-frequency circuit of expression embodiments of the present invention 1.Fig. 4 B is the vertical view of the structure of the related high-frequency circuit of expression embodiments of the present invention 1.
With reference to Fig. 3, Fig. 4 A, and Fig. 4 B, high-frequency circuit 101 comprises: signal graph 11; Hardware 12; Medium substrate 13; Electronic devices and components 14; The second ground connection figure 15; The first ground connection figure 16; And metal shell 17,18.
Medium substrate 13 comprises: the first first type surface S1 that electronic devices and components 14 are installed; And be arranged at the second first type surface S2 of the opposite side of the first first type surface S1.The first ground connection figure 16 is arranged at the second first type surface S2.Signal graph 11 is arranged at the first first type surface S1, constitutes microstrip line with the medium substrate 13 and the first ground connection figure 16.The second ground connection figure 15 is arranged at the first first type surface S1, with signal graph 11 devices spaced apart settings.
Metal shell 17,18 is electrically connected with the second ground connection figure 15 and the first ground connection figure 16, accommodates and fixed signal figure 11, hardware 12, medium substrate 13, electronic devices and components 14, the first ground connection figure 16 and the second ground connection figure 15.More specifically, the mode with the space 19 that is formed for accommodating signal graph 11, hardware 12, medium substrate 13, electronic devices and components 14, the first ground connection figure 16 and the second ground connection figure 15 is assembled into metal shell 18 with metal shell 17.Metal shell 18 is close to the first ground connection figure 16, is electrically connected with the second ground connection figure 15 by the not shown through hole that is arranged at medium substrate 13.
Hardware 12 is made by metallic plate is carried out punch process.Hardware 12 is electrically connected with the second ground connection figure 15, and to separate the gap relative with signal graph 11.Particularly, be arranged to make it to surround signal graph 11 hardware 12, along the bearing of trend extension of signal graph 11.Hardware 12 is connected with the second ground connection figure 15 by scolding tin.In addition, hardware 12 also can utilize screw etc. to be fixed in medium substrate 13.
Microstrip line in the high-frequency circuit 101 is used as and is used to transmit the RF signal of LNB5 shown in Figure 2 and the circuit of IF signal.For example, by high-frequency circuit 101 being applied to than the IF amplifier 66 of other holding wire length and the holding wire between the lead-out terminal 70, the miniaturization more remarkable effect of microstrip line.
The figure of the impedance variation of microstrip line when Fig. 5 is the distance W L that represents to change respectively between the wall portion of distance H u between the top of signal graph 11 and hardware 12 and signal graph 11 and hardware 12.Fig. 6 A is the curve chart when changing distance H u among Fig. 5.Fig. 6 B is the curve chart when changing distance W L among Fig. 5.
In Fig. 5, Fig. 6 A and Fig. 6 B, substrate uses the RO4233 of Rogers (Rogers) company.The dielectric constant of this substrate when 10GHz is 3.33, and the dielectric loss angle tangent when 10GHz is 0.0026.In addition, the thickness of this substrate is 0.5mm.In addition, the thickness that is arranged at the signal graph of the microstrip line on this substrate is 0.036mm.The characteristic impedance of this microstrip line is set at 50 Ω, and the design load of live width is 1.1mm.In addition, f0 is the frequency of the signal that is used to measure.
With reference to Fig. 5 and Fig. 6 A, under the state with distance W L stuck-at-.0mm, by reducing distance H u, the impedance Z 0 of microstrip line reduces.
With reference to Fig. 5 and Fig. 6 B, distance H u is being fixed under the state of 0.5mm, by reducing distance W L, the impedance Z 0 of microstrip line reduces.
Thus, in high-frequency circuit 101, adopting metal shielding construction body is that hardware 12 is near the upside setting of the signal graph 11 of microstrip line and the structure of ground connection.Utilize this structure, do not need attenuate substrate thickness or raising substrate dielectric constant as in the past,, just can reduce the impedance of microstrip line as long as by reducing at least one side of distance H u and distance W L.
Fig. 7 A be illustrated under the situation that signal frequency f0 is 11.725GHz, the figure of the design size of 50 Ω microstrip lines when changing distance H u and distance W L respectively.Fig. 7 B be illustrated under the situation that signal frequency f0 is 1.55GHz, the figure of the design size of 50 Ω microstrip lines when changing distance H u and distance W L respectively.
Fig. 8 A is the figure with distance H u shown in Fig. 7 A and Fig. 7 B and the relation curveization between the live width W.
Fig. 8 B is the figure with distance W L shown in Fig. 7 A and Fig. 7 B and the relation curveization between the live width W.
Fig. 9 A is to be the figure of the relation curveization of distance H u shown in Fig. 7 A under the situation of 11.725GHz and graphics area with signal frequency f0.Fig. 9 B is to be the relation figure of curveization respectively of distance W L shown in Fig. 7 A under the situation of 11.725GHz and graphics area with signal frequency f0.Figure 10 A is to be the figure of the relation curveization of distance H u shown in Fig. 7 B under the situation of 1.55GHz and graphics area with signal frequency f0.Figure 10 B is to be the relation figure of curveization respectively of distance W L shown in Fig. 7 B under the situation of 1.55GHz and graphics area with signal frequency f0.
Shown in Fig. 7 A, Fig. 7 B, Fig. 8 A, Fig. 8 B like that, by reducing at least one side of distance H u and distance W L, and do not need attenuate substrate thickness or raising substrate dielectric constant as in the past, just can realize 50 identical Ω microstrip lines with littler graphic width.In addition, shown in Fig. 7 A, Fig. 7 B, Fig. 9 A, Fig. 9 B and Figure 10 A, Figure 10 B like that, by reducing at least one side of distance H u and distance W L, and do not need attenuate substrate thickness or raising substrate dielectric constant as in the past, just can realize 50 identical Ω microstrip lines with littler graphics area.That is, in high-frequency circuit 101, can in the design of 50 Ω lines, reduce the signal graph width of microstrip line.
Herein, under the situation that reduces distance H u or distance W L, the wavelength X g of the signal by microstrip line on direction of advance stretches slightly.Yet, in high-frequency circuit 101, compare the magnification ratio of wavelength X g, the minification of the minification of live width W and graphics area S is bigger.Therefore, leave in the structure of signal graph 10mm of microstrip line at the metal shell 17 that for example surrounds microstrip line, be provided with under the situation of shielding construction body at the upside of distance signal figure 11 and the position of left and right sides 0.5mm, the area of the signal graph 11 of microstrip line can be narrowed down to 77% to 79% size.
Yet, the existing problem that realizes the method existence manufacturing difficulty of microstrip line miniaturization by the attenuate substrate thickness.In addition, realize that by improving substrate dielectric constant there is the high problem of cost in the method for microstrip line miniaturization.
Yet embodiments of the present invention 1 related high-frequency circuit comprises with 15 electrical connections of the second ground connection figure, separates the relative hardware in gap 12 with signal graph 11.Utilize this structure, the distance that can adjust signal graph 11 and hardware 12 makes microstrip line have desirable impedance, and the size that reduces microstrip line simultaneously reduces circuit area.Thereby, can be easily and realize the miniaturization of microstrip line at low cost.Therefore, by using this high-frequency circuit, can try hard to realize the miniaturization of LNB and two-way satellite receive-transmit system.
In addition, Fig. 3, Fig. 4 A, and Fig. 4 B in, for convenience of description, only show a signal graph that covers by hardware 12, but in fact, in most cases hardware 12 covers a plurality of signal graphs.In this case, the effect of being brought by the miniaturization of microstrip line is more obvious.
In addition, in the related high-frequency circuit of embodiments of the present invention 1, hardware 12 is arranged so that surround signal graph 11, extends along the bearing of trend of signal graph 11.Utilize this structure, can make microstrip line have desirable impedance, further reduce its size simultaneously.
Below, use description of drawings another embodiment of the present invention.In addition, part identical or suitable among the figure is marked with same numeral, no longer repeat specification.
(execution mode 2)
Present embodiment and execution mode 1 related high-frequency circuit is compared, and relates to the high-frequency circuit of the implementation method that has changed hardware.Except the content of following explanation, all identical with the related high-frequency circuit of execution mode 1.
Figure 11 is the stereogram of the structure of the related high-frequency circuit of expression embodiments of the present invention 2.Figure 12 is the cutaway view of the structure of the related high-frequency circuit of expression embodiments of the present invention 2.
With reference to Figure 11 and Figure 12, high-frequency circuit 102 comprises: signal graph 11; Hardware 21; Medium substrate 13; Electronic devices and components 14; The first ground connection figure 16; The second ground connection figure 15; And metal shell 31,32.
Metal shell 31,32 is electrically connected with the second ground connection figure 15 and the first ground connection figure 16, accommodates and fixed signal figure 11, hardware 21, medium substrate 13, electronic devices and components 14, the first ground connection figure 16 and the second ground connection figure 15.More specifically, to be formed with the mode in the space 19 that is used to accommodate signal graph 11, hardware 21, medium substrate 13, electronic devices and components 14, the first ground connection figure 16 and the second ground connection figure 15, housing 31 is assembled into housing 32.Housing 32 is close to the first ground connection figure 16, is electrically connected with the second ground connection figure 15 by the not shown through hole that is arranged at medium substrate 13.
Hardware 21 forms as one with metal shell 31.Hardware 21 is electrically connected with the first ground connection figure 16 by metal shell 31,32, and is electrically connected with the second ground connection figure 15 by the not shown through hole that is arranged at medium substrate 13.It is relative that hardware 21 and signal graph 11 separate the gap.
Because hardware 21 and metal shell 31 are formed as one, therefore to compare with the related high-frequency circuit of embodiments of the present invention 1, characteristic has deterioration slightly, but owing to do not need hardware is installed on medium substrate, therefore can improve installation effectiveness.
Other structures of high-frequency circuit 102 and action are all identical with the related high-frequency circuit of execution mode 1, therefore no longer repeat detailed explanation herein.
Below, use the description of drawings another embodiment of the invention.In addition, part identical or suitable among the figure is marked with same numeral, no longer repeat specification.
(execution mode 3)
Present embodiment and execution mode 1 related high-frequency circuit is compared, and relates to the high-frequency circuit of the implementation method that has changed hardware.Except the following description content, all identical with the related high-frequency circuit of execution mode 1.
Figure 13 is the stereogram of the structure of the related high-frequency circuit of expression embodiments of the present invention 3.Figure 14 is the cutaway view of the structure of the related high-frequency circuit of expression embodiments of the present invention 3.
With reference to Figure 13 and Figure 14, high-frequency circuit 103 comprises: signal graph 11; Medium substrate 13; Electronic devices and components 14; The second ground connection figure 15; The first ground connection figure 16; And metal shell 33,34.
Medium substrate 13 comprises the first type surface S3 that electronic devices and components 14 are installed and is arranged at the first type surface S4 of the opposite side of first type surface S3.The first ground connection figure 16 is arranged at first type surface S3.Signal graph 11 is arranged at first type surface S4, constitutes microstrip line with the medium substrate 13 and the first ground connection figure 16.The through hole 36,37 of signal graph 11 by being arranged at medium substrate 13 is in 14 connections of the electronic devices and components that are installed on first type surface S3.
The second ground connection figure 15 is arranged at first type surface S4, with signal graph 11 devices spaced apart settings.
Metal shell 33,34 is electrically connected with the second ground connection figure 15 and the first ground connection figure 16, accommodates and fixed signal figure 11, medium substrate 13, electronic devices and components 14, the first ground connection figure 16 and the second ground connection figure 15.More specifically, to be formed with the mode in the space 19 that is used to accommodate signal graph 11, medium substrate 13, electronic devices and components 14, the first ground connection figure 16 and the second ground connection figure 15, housing 33 is assembled into housing 34.Housing 34 is close to the second ground connection figure 15, is electrically connected with the first ground connection figure 16 by the not shown through hole that is arranged at medium substrate 13.
Metal shell 34 has the notch part 38 of being close to the second ground connection figure 15 and being formed with the space 35 that covers signal graph 11.Notch part 38 is parts of metal shell 34, has the face that is used to form space 35.Notch part 38 in the high-frequency circuit 103 is equivalent to the hardware 12 of the related high-frequency circuit of embodiments of the present invention 1.Notch part 38 is electrically connected with the second ground connection figure 15, and to separate the gap relative with signal graph 11.
Figure 15 is the stereogram of the example of the related high-frequency circuit of expression embodiments of the present invention 3.Figure 16 is the cutaway view of the example of the related high-frequency circuit of expression embodiments of the present invention 3.
Figure 17 is the figure that passes through characteristic of the microstrip line among expression Figure 15 and the embodiment shown in Figure 16.To be expression unload the figure that passes through characteristic of the microstrip line under the situation of lower house 34 from the high-frequency circuit of Figure 15 and embodiment shown in Figure 16 to Figure 18.
In Figure 15 to Figure 18, substrate uses the RO4233 of Rogers (Rogers) company.The dielectric constant of this substrate when 10GHz is 3.33, and the dielectric loss angle tangent when 10GHz is 0.0026.In addition, the thickness of this substrate is 0.5mm.In addition, the thickness that is arranged at the signal graph of the microstrip line on this substrate is 0.036mm, and width is 0.6mm, and length is 24mm, and material is a copper, and weight is 1/2 ounce.In addition, the material of housing is aluminium die casting.
With reference to Figure 16, being provided with concave portion in housing 34 is notch part 38, and the distance c that above-mentioned notch part 38 forms the first type surface of distance signal figures 11 is for example 0.5mm, and about distance signal figure 11 is the space of 0.3mm for example apart from a, b.That is, the size for the notch part 38 of housing 34 is set at the left and right sides 0.3mm of distance signal figure 11 with its transverse width, and its degree of depth is set at the first type surface 0.5mm of distance signal figure 11.
The aperture of the through hole 36 of signal input side is 0.4mm, and top width is 0.2mm.The aperture of the through hole 37 of signal outlet side is 1.5mm, and top width is 0.5mm.
With reference to Figure 17, represent the loss of passing through from through hole 36 to 37 of present embodiment with curve S 21.Is 0.144dB by loss when the 950MHz, is 0.210dB when 2150MHz.In addition, represent that with curve S 11 input terminal is the reflection characteristic in the through hole 36 of signal input side.Reflection characteristic in the through hole 36 is 31.342dB when 950MHz, is 18.665dB when 2150MHz.In addition, represent that with curve S 22 lead-out terminal is the reflection characteristic in the through hole 37 of signal outlet side.Reflection characteristic in the through hole 37 is 31.400dB when 950MHz, is 16.235dB when 2150MHz.
On the other hand, with reference to Figure 18, unload lower house 34 from the high-frequency circuit of present embodiment and make the open structure in the signal graph top of microstrip line from the loss of passing through of through hole 36 to 37 thereby be illustrated in curve S 21.Is 0.302dB by loss when the 950MHz, is 0.601dB when 2150MHz.In addition, represent that with curve S 11 input terminal is the reflection characteristic in the through hole 36 of signal input side.Reflection characteristic in the through hole 36 is 22.769dB when 950MHz, is 14.336dB when 2150MHz.In addition, represent that with curve S 22 lead-out terminal is the reflection characteristic in the through hole 37 of signal outlet side.Reflection characteristic in the through hole 37 is 24.875dB when 950MHz, is 15.784dB when 2150MHz.
If relatively Figure 17 and Figure 18, as can be known: the structure of the housing 34 by adopting high-frequency circuit 103, the loss of passing through of high-frequency circuit reduces, and reflection characteristic becomes good.This expression housing 34 can be with the impedance setting of microstrip line near 50 Ω.
That is, be 1.1mm with respect to the signal graph width of 50 Ω microstrip lines in the existing medium substrate, in high-frequency circuit 103, the signal graph width of 50 Ω microstrip lines is 0.6mm, thus, can design microstrip line and make it dwindle about 55%.
And in the related high-frequency circuit of embodiments of the present invention 3, metal shell 34 has the notch part 38 of being close to the second ground connection figure 15 and being formed with the space 35 that covers signal graph 11.According to this structure, do not need as the related high-frequency circuit of embodiments of the present invention 1 and execution mode 2, to be provided with and to install hardware separately, therefore can try hard to realize high-frequency circuit, LNB, and the further miniaturization of two-way satellite receive-transmit system.
Although the present invention is had been described in detail, this just is used for expression for example, and non-limiting, can be expressly understood that scope of invention is by additional claim scope explanation.

Claims (6)

1. a high-frequency circuit is characterized in that, comprising:
Medium substrate, this medium substrate have first first type surface and are arranged at second first type surface of an opposite side of described first first type surface;
The first ground connection figure, this first ground connection figure is arranged at described second first type surface;
Signal graph, this signal graph are arranged at described first first type surface, constitute microstrip line with described medium substrate and the described first ground connection figure;
The second ground connection figure, this second ground connection figure is arranged at described first first type surface, is provided with described signal graph devices spaced apart;
Hardware, this hardware is electrically connected with the described second ground connection figure, and to separate the gap relative with described signal graph; And,
Metal shell, this metal shell is electrically connected with described first ground connection figure and the described second ground connection figure, and the collecting post gives an account of the matter substrate, described microstrip line, and described hardware.
2. high-frequency circuit as claimed in claim 1 is characterized in that,
Be arranged to make it to surround described signal graph described hardware, along the bearing of trend extension of described signal graph.
3. high-frequency circuit as claimed in claim 1 is characterized in that,
Described hardware and described metal shell form as one.
4. high-frequency circuit as claimed in claim 1 is characterized in that,
Described metal shell has the notch part of being close to the described second ground connection figure and being formed with the space that covers described signal graph,
Described hardware is made of described notch part.
5. low-noise frequency transformer comprises:
Frequency mixer, this frequency mixer are used for the wireless signal that receives is carried out frequency conversion; And,
High-frequency circuit, this high-frequency circuit are used to the signal that transmits described wireless signal or utilize described frequency mixer to carry out frequency conversion,
Described high-frequency circuit comprises:
Medium substrate, this medium substrate have first first type surface and are arranged at second first type surface of an opposite side of described first first type surface;
The first ground connection figure, this first ground connection figure is arranged at described second first type surface;
Signal graph, this signal graph are arranged at described first first type surface, constitute microstrip line with described medium substrate and the described first ground connection figure;
The second ground connection figure, this second ground connection figure is arranged at described first first type surface, is provided with described signal graph devices spaced apart;
Hardware, this hardware is electrically connected with the described second ground connection figure, and to separate the gap relative with described signal graph; And,
Metal shell, this metal shell is electrically connected with described first ground connection figure and the described second ground connection figure, and the collecting post gives an account of the matter substrate, described microstrip line, and described hardware.
6. antenna assembly comprises:
Antenna, this antenna receives wireless signal; And,
Low-noise frequency transformer, this low-noise frequency transformer amplify and carry out frequency conversion to described wireless signal,
Described low-noise frequency transformer comprises:
Frequency mixer, this frequency mixer are used for described wireless signal is carried out frequency conversion; And,
High-frequency circuit, this high-frequency circuit are used to the signal that transmits described wireless signal or utilize described frequency mixer to carry out frequency conversion,
Described high-frequency circuit comprises:
Medium substrate, this medium substrate have first first type surface and are arranged at second first type surface of an opposite side of described first first type surface;
The first ground connection figure, this first ground connection figure is arranged at described second first type surface;
Signal graph, this signal graph are arranged at described first first type surface, constitute microstrip line with described medium substrate and the described first ground connection figure;
The second ground connection figure, this second ground connection figure is arranged at described first first type surface, is provided with described signal graph devices spaced apart;
Hardware, this hardware is electrically connected with the described second ground connection figure, and to separate the gap relative with described signal graph;
Metal shell, this metal shell is electrically connected with described first ground connection figure and the described second ground connection figure, and the collecting post gives an account of the matter substrate, described microstrip line, and described hardware.
CN2010101828660A 2009-05-19 2010-05-12 High-frequency circuit, low-noise frequency transformer and antenna assembly Pending CN101895002A (en)

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