CN101894870B - Photoelectric transformation element and manufacturing method thereof - Google Patents
Photoelectric transformation element and manufacturing method thereof Download PDFInfo
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- CN101894870B CN101894870B CN2009101410708A CN200910141070A CN101894870B CN 101894870 B CN101894870 B CN 101894870B CN 2009101410708 A CN2009101410708 A CN 2009101410708A CN 200910141070 A CN200910141070 A CN 200910141070A CN 101894870 B CN101894870 B CN 101894870B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a photoelectric transformation element and a manufacturing method thereof. The photoelectric transformation element comprises a base layer and an active layer. The active layer is arranged on the base layer. The receiving smoothwall of the active layer is provided with a surface texture structure. The surface texture structure contains a plurality of repeated sunk units, each sunk unit comprises three crossed planes, and sunk sharp points are formed at the crossing. The three planes are mutually vertical or approximately and mutually vertical. The invention adopts angle coupling structure as sunk unit, the area forming more than three times of reflection on incident light can be increased, and absorption of incident light can be effectively improved.
Description
Technical field
The present invention relates to the photo-electric conversion element and the manufacturing approach thereof of the high coupling efficiency of a kind of tool.
Background technology
Solar energy is utilized gradually, replaces the energy of tradition like oil.If solar cell all adopts semi-conducting material to make, it can cause the raw substrate famine, and therefore price also can raise.Another kind of solar cell is with cheap glass or ceramic as substrate, forms thin film solar cell with the plated film mode again.Because thin film solar cell does not have the restriction of substrate, be easy to use again on different building materials, prospect is quite good.
Ceramic substrate itself is that the ceramic powder particle sintering forms except cheap, high temperature resistant and extreme environment, so be a kind of good Lambertian reflector (Lambertian reflector).When light incides this surface; Reverberation can form uniform diffused light, when being made into the substrate of thin film solar cell, can effectively the incident light diffusion be come; Reduce the directly light of reflection; Advancing and in film, form diffused light, light can effectively be rested in the film absorbed by material, is a good solar cell substrate form.
Ceramic substrate can be applicable to the most frequently used thin film solar cell; Can be suitable for the plated film of various materials; No matter the plated film that is amorphous silicon, polysilicon, silicon metal, SiGe, III-V or II-VI (CdTe) family semiconductor, micromolecule, macromolecule, dye sensitization or CIS gallium (copper indium gallium selenide is called for short CIGS) all can use.Yet because it is to utilize form of film to grow up to reduce the use cost of material, the thickness of simple thin-film material is too thin, and light absorpting ability can not show a candle to bulk (bulk materials).Again, these materials are all quite high in the refractive index of visible light and near infrared light; (reflectance loss) is quite serious in the loss of sunlight boundary reflection; So the method for suitable optical coupling (light-in coupling) and light limitation (light trapping) must be arranged; Sunlight is coupled in the film, and utilizes structural design to increase the stroke of light in film, and then could effectively increase the efficient of thin film solar cell.
Fig. 1 illustrates the traditional planar surface to sun reflection of light sketch map.Consulting Fig. 1, is example with the silicon block, and its surface is a shiny surface.Vertical incident light is understood some and is reflected back, shown in arrow.Its reflection loss on the interface of silicon and air is about 33%.
Fig. 2 illustrates the surface texture that conventional surface has inverted pyramid, and it is to sun reflection of light sketch map.Consult Fig. 2, in the traditional design, the structure that the higher single crystal silicon solar cell of efficient adopts is to adopt the inverted pyramid surface texture at present.Because the inverted pyramid surface texture, most of incident light can just leave silicon substrate through twice reflection.Inverted pyramid structure can reduce the loss of incident ray vertical reflection, the light of reflection is reentered be mapped to body structure surface, increases light thus and enters into the ratio in the silicon.Behind two secondary reflections, reflection loss can reduce and is about 11%.
How to design suitable structure, the efficient that increases the thin film solar cell of ceramic substrate made is relevant dealer needs consideration in research and development problem.
Summary of the invention
The present invention provide a kind of photo-electric conversion element with and manufacturing approach, to reach the effect that reduces reflection loss at least.
The present invention proposes a kind of photo-electric conversion element, comprises basalis and active layer.Active layer is arranged on the basalis.The reception light mask of active layer has surface microstructure.Surface microstructure comprises a plurality of concave units of repetition, and each this concave units comprises three planes of intersection, is formed with recessed cusp at infall.These three planes normal vector angle on any two planes are each other spent to the scope of 120 degree between 60.
These three planes are vertical each other.
This basalis and this active layer constitute solar cell or optical detector.
The present invention proposes a kind of method of making photo-electric conversion element, comprises basalis is provided.Then, form surface microstructure on basalis.Surface microstructure comprises a plurality of concave units of repetition, and each this concave units comprises three planes of intersection, is formed with recessed cusp at infall, and these three planes normal vector angle on any two planes are each other spent to the scope of 120 degree between 60.Active layer is formed on this surface microstructure and is conformal with surface microstructure.
These three planes are vertical each other.The present invention proposes a kind of method of making photo-electric conversion element, and comprising provides the flat base layer; Form active layer on this flat base layer; And form surface microstructure on this active layer.Surface microstructure comprises a plurality of concave units of repetition, and each concave units comprises three planes of intersection, is formed with recessed cusp at infall, and these three planes normal vector angle on any two planes are each other spent to the scope of 120 degree between 60.
These three planes are vertical each other.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Fig. 1 illustrates flat surfaces to sun reflection of light sketch map.
Fig. 2 illustrates the surface texture with inverted pyramid, and it is to sun reflection of light sketch map.
Fig. 3 illustrates according to the embodiment of the invention, a kind of photo-electric conversion element perspective view.
Fig. 4 (a) illustrates the schematic top plan view of Fig. 3.
Fig. 4 (b) illustrates the I-I generalized section of Fig. 4 (a).
Fig. 5 illustrates according to the embodiment of the invention, and incident light produces the light path sketch map of 3 secondary reflections at surface microstructure.
Fig. 6 illustrates according to the embodiment of the invention, the surface microstructure sketch map of active layer.
Fig. 7～9 illustrate a little embodiment according to the present invention, the structural representation of photo-electric conversion element.
Figure 10 illustrates according to the embodiment of the invention, has the cross-sectional view of the photo-electric conversion element of high coupling efficiency.
Figure 11 illustrates under the different wave length, and kinds of surface organizes micro-structural respectively by the simulation sketch map of active layer absorption efficiency.
Figure 12 (a) illustrates a kind of photo-electric conversion element schematic top plan view like Fig. 4 (a).
Figure 12 (b) illustrates concave units among Figure 12 (a), produces the area schematic of reflection of twice reflection and three times to front incident light analysis.
Figure 13 illustrates three planes pattern diagram of variable angle therebetween.
Figure 14 illustrates according to the pattern of Figure 13 and carries out by the theoretical research of the energy efficiency of silicon layer absorption.Description of reference numerals
100: active layer
102,104,106: the plane
108: recessed cusp
110: boundary line
112: the sideline
150: concave units
200: surface microstructure
202,204,206: the plane
208: recessed cusp
300: substrate
302: conforma layer
304: active layer
400: the triple reflection zone
402: the secondary reflection zone
Embodiment
Solar cell is a kind of photo-electric conversion element, and purpose changes the luminous energy of incident into electric energy.Its efficient is except the influence that receives internal quantum, and whether photon can effectively arrive semiconductor active layer and also be the key that influences efficient by this layer absorption.Because multichip semiconductor is a high-index material, its boundary reflection rate is high, and therefore if do not give suitable optical coupling structure, many energy will lose because of direct reflection, can't penetrate into semiconductor layer.
Reach and reduce the reflection of incident light loss, the if structure design can make the multiple again body structure surface that incides of answering several times of reflection ray, then can reduce the loss of reflection ray once more.The present invention proposes angle coupling (corner cube) structure.Angle coupling structure is to utilize to comprise three orthogonal the unit that enough is in depression, and can make just to follow originally direction after the incident light reflection three times and return, and is added to the amount of light that is mapped to element internal.If directly do this structure on the ceramic substrate of cooperation Lambertian reflector, plate thin film solar cell again, the optical coupling usefulness of comparable inverted pyramid structure is better, and then promotes solar battery efficiency.
Below lift some embodiment the present invention is described, but the present invention is not limited only to the embodiment that lifts, and the suitably combination each other between the embodiment of lifting.
Fig. 3 illustrates according to the embodiment of the invention, a kind of photo-electric conversion element perspective view.Consult Fig. 3, the present invention for example increases the probability that has triple reflection through forming the order of reflection that surface microstructure is increased in surface texture.Photo-electric conversion element for example comprises active layer 100.Active layer 100 has surface microstructure (textured structure).Surface microstructure comprises a plurality of concave units of repetition, and each this concave units comprises three planes 102,104,106 of intersection, is formed with recessed cusp at infall.These three planes 102,104,106 are vertical each other or approximate vertical each other.These three faces can allow light that repeatedly reflection takes place, and make light get into active layer 11 more easily.
The making that the surface microstructure of active layer 100 can the ligand bottom in addition, its relation can be described in Fig. 7～9.Following first description list covering weave structure Design with and for example reduce the mechanism of reflection loss.
Fig. 4 (a) illustrates the schematic top plan view of Fig. 3.Fig. 4 (b) illustrates the I-I generalized section of Fig. 4 (a).Consult Fig. 4 (a) and Fig. 4 (b); Each concave units 150 is the structures that are made up of the inverted triangle awl orthogonal three planes 102,104,106; Its boundary line 110 is similar with the XYZ axle of rectangular coordinates, and the recessed cusp 108 of inverted triangle awl can be regarded as the initial point of axes of coordinates.The sideline 112 of each concave units 150 is to distribute in the plane.Present embodiment is the reception optical surface that surface microstructure directly is produced on active layer 100.
At present embodiment, the rounded projections arranged mode can be taked in concave units Unit 150 of a plurality of repetitions, and wherein each concave units 150 is equilateral triangle by the top view of photo-electric conversion element, and each equilateral triangle is with the complete surface that is covered with of the most intensive mode.Under this arrangement mode, if only consider the reflection of optical coupling structure to light itself can make most normal incidence light that 3 secondary reflections take place.
Fig. 5 illustrates according to the embodiment of the invention, and incident light produces the light path sketch map of 3 secondary reflections at surface microstructure.Consult Fig. 5, because three faces are vertical each other, during the light forward entrance, whole reverberation can be in each reflection of these three faces once.In Fig. 5, XY plane, YZ plane and XZ plane are three orthogonal planes.Incident light will be in each reflection of three faces once shown in arrow, afterwards along the direction outgoing that parallels with incident light.Three orthogonal planes constitute a concave units.A plurality of concave units are formed arrays and under suitable arrangement mode, if only consider the reflection of optical coupling structure to light itself can make most forward entrance light that 3 secondary reflections take place.Therefore, the surface microstructure of the present invention's proposition can more effectively promote the coupling efficiency of solar cell.The reflection loss at interface is for example about can to drop to 4%.
In this, three planes are vertical each other in preferred situation, and this moment, concave units did not need that good optical coupling effect can be arranged too deeply.Yet, its effect is vertically also arranged each other if be similar to.The scope of in other words, appointing the normal vector angle on two sides to spend between 60 degree and 120 between three faces still has the effect of essence.
Fig. 6 illustrates according to the embodiment of the invention, the surface microstructure sketch map of active layer.Consult Fig. 6, the concave units of the surface microstructure 200 of active layer for example is 202,204,206 compositions of three crossing plane with quadrature, and its common crosspoint is exactly recessed cusp 208.By concave units border, front is regular hexagon.Different arrangement modes have different-effect.If only consider the reflection of optical coupling structure itself to light, pass through proper arrangement, itself in addition can make 100% normal incidence light that 3 secondary reflections all take place.
In addition, the size of concave units also can adjust according to actual needs.As long as the size of concave units is greater than more than ten times of lambda1-wavelength, the size of concave units does not influence the reflecting effect of light.
On just making, make active layer have surface microstructure, different making flow processs can be arranged, have to make the structure of lamination that some differences arranged.Fig. 7 illustrates according to the embodiment of the invention, the structural representation of photo-electric conversion element.Consult Fig. 7, surface microstructure of the present invention can be produced on earlier on the substrate 210.The mode of making for example is to adopt technologies such as heat is all pressed, hot roll extrusion, laser, gold-tinted etching, will be produced on by the array structure that concave units constitutes on the substrate 210 of photo-electric conversion element earlier.Then, on substrate 210, the various retes of actual needs wherein comprise active layer 212 in the covering with plated film or other modes.So, comprise active layer 212, repeat to be formed on the structure of substrate 210 conformal with surface microstructure at each interior rete.Therefore the reception light face of active layer 212 also has identical surface microstructure.
Except the production method of Fig. 7, also can take another kind of production method.Fig. 8 illustrates according to the embodiment of the invention, the structural representation of photo-electric conversion element.Consult Fig. 8, substrate 210 can be smooth face.In addition through technologies such as said method or thermoforming, Seterolithographies earlier with this structure fabrication on a certain intermediate layer 214 between active layer and the substrate.Intermediate layer 214 has the surface texture micro-structural.Borrowing to cover to comprise active layer 212 and form retes at interior other with plated film or other modes, make comprise active layer 212 interior other form retes and the surface texture micro-structural conformal, so active layer 212 also has the surface texture micro-structural.
Another kind of again production method is as shown in Figure 9.Fig. 9 illustrates according to the embodiment of the invention, the structural representation of photo-electric conversion element.Consult Fig. 9, on ceramic substrate 210, be aided with one or more layers material, and for example utilize aforesaid process, the surface texture micro-structural directly is made on the interface of active layer 212.
In other words, the face of the reception light of active layer 212 need be made aforesaid covering weave structure, but with regard to laminated construction, its production method need not be limited in the particular production flow process.
Figure 10 illustrates according to the embodiment of the invention, has the cross-sectional view of the photo-electric conversion element of high coupling efficiency.Consult Figure 10, the embodiment of photo-electric conversion element comprises that substrate 300 adopts ceramic substrates, with the mode of die marks in producing the angle coupling structure that the present invention proposes.Deposit the for example conforma layer 302 of silicon dioxide on the ceramic substrate 300, thickness for example is 100 μ m.Active layer 304, for example thickness is the single crystal silicon material of 5 μ m, is deposited on the conforma layer 302 also conformal with it.Therefore active layer 304 also has the surface texture micro-structural.Conforma layer 302 and active layer 304 all repeat the surface texture micro-structural of ceramic substrate 300, and its concave units by a plurality of repetitions is formed.Each concave units comprises three orthogonal.Every concave units is the equilateral triangle of the length of side 20 μ m by top view, and each equilateral triangle is with the complete surface that is covered with of the most intensive mode.
Figure 11 illustrates the Energy distribution simulation sketch map that kinds of surface organizes micro-structural to be absorbed by active layer respectively.Consult Figure 11, the curve that is made up of round dot is not make any structure on the active layer to simulate the extinction efficient that obtains to the wavelength response diagram.The curve that is made up of triangulation point is on active layer, to make inverted pyramid structure, and the resulting extinction efficient of simulation is to the wavelength response diagram under identical materials.The curve that is made up of the crosspoint is to adopt identical materials, but make as the surface microstructure of Figure 10 through the extinction efficient of simulating gained to the wavelength response diagram.
Result by Figure 11 can find out that the concave units of the angle coupling shape that the present invention proposes helps light absorbing energy really, just reduces reflection loss.Wherein one of reason is that the present invention improves the ratio with the pip more than 3 times, and multimachine can get into active layer and be absorbed therefore to allow incident light to have more.
Figure 12 (a) illustrates a kind of photo-electric conversion element stereochemical structure schematic top plan view like Fig. 4 (a).Consult Figure 12 (a), get a concave units 150 like the zone that thick line defined, to carry out the simulation of ray tracing.Figure 12 (b) illustrates concave units 150 among Figure 12 (a), produces the zone of reflection of twice reflection and three times to front incident light analysis.According to the inverted triangle wimble structure of present embodiment, the light that gets into triple reflection zone 400 can just be reflected back after the triple reflection through three faces.Just be reflected back behind two secondary reflections of light through two faces in entering secondary reflection zone 402 again.Because the reflection at many interfaces, active layer is the light of a chance absorption portion how, so the increase in triple reflection zone 400 can make absorptivity increase.
In addition, because the plane 102,104,106 of depression is not a vertical incidence as far as the incident light perpendicular to basalis, that is to say that incidence angle is not a zero degree.Consider the relation of reflectivity and incidence angle, show that from the scientific principle data non-polarized light is identical haply less than the reflectivity of 60 degree in incidence angle, incidence angle can rise greater than the reflectivity of 60 degree rapidly.The plane 102,104,106 of the present invention's depression and the incidence angle of front incident light are less than 60 degree, and therefore surface texture micro-structural of the present invention can not cause the boundary reflection rate that increases.
Further about changing the discussion of three plane angles therebetween, it is vertical each other that it need not to be limited in three planes.The present invention has done Study on Theory.Figure 13 illustrates three planes pattern diagram of variable angle therebetween.Get pattern shown in Figure 13, some parameter-definitions are following.In an xyz coordinate system, under a desirable geometry, the top of angle coupling is positioned on the initial point O.If the top moves around on the direction of vector [1,1,1], then the ψ angle no longer is 90 degree, ψ=∠ AOB=∠ BOC=∠ AOC.In addition, the θ viewpoint definition is three plane AOB, AOC, with the angle of the vertical direction on any two planes of BOC.As before mentioned, the θ angle can be to be about 90 degree, for example is the scope about 60o-120o.Similarly, the ψ angle also can be to be about 90 degree.
Figure 14 illustrates according to the pattern of Figure 13 and carries out by the theoretical research of the energy efficiency of silicon layer absorption.Consult Figure 14 (b), by the research of the energy efficiency of silicon layer absorption.Shown in it, the energy that is absorbed by silicon layer increases and increases along with the θ angle, especially in the θ angle between 60 degree and 90 degree, the amplitude of increase is the most obvious.And when the θ angle was spent greater than 90, the energy that is absorbed by silicon layer tended towards stability.Therefore, the θ angle all has good result between 60 degree to the scope of 120 degree, and wherein the θ angle is preferable with 90 degree again, even because increase angle again, it is limited to improve the effect that absorbs, and can improve the difficulty of processing procedure on the contrary.The present invention adopts angle coupling structure as sunk unit, can increase the zone that incident light is produced reflection more than three times, can effectively promote absorption of incident light.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Those of ordinary skill in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (20)
1. photo-electric conversion element comprises:
Basalis; And
Active layer is arranged on this basalis, and the reception light mask of this active layer has surface microstructure,
Wherein this surface microstructure comprises a plurality of concave units of repetition, and each this concave units comprises three planes of intersection, is formed with recessed cusp at infall, and the normal vector angle on any two planes is between the scope of 60 degree to 120 degree between these three planes.
2. photo-electric conversion element as claimed in claim 1, wherein these three planes are vertical each other.
3. photo-electric conversion element as claimed in claim 1, wherein this basalis and this active layer constitute solar cell or optical detector.
4. photo-electric conversion element as claimed in claim 3, wherein the material of this solar cell comprises amorphous silicon, silicon metal, SiGe, III-V family semiconductor, II-VI family semiconductor, organic molecule, organic polymer, dye sensitization or CIS gallium.
5. photo-electric conversion element as claimed in claim 3, wherein the material of this solar cell comprises polysilicon.
6. photo-electric conversion element as claimed in claim 1, wherein each this concave units is the inverted triangle wimble structure.
7. photo-electric conversion element as claimed in claim 1, wherein these three planes of each this concave units are to be made up of cubical three cross facets.
8. photo-electric conversion element as claimed in claim 1, wherein the front projection of those concave units is triangle or hexagon.
9. photo-electric conversion element as claimed in claim 1, wherein this basalis has surface texture, and this active layer is conformal to constitute this surface microstructure with this surface texture.
10. photo-electric conversion element as claimed in claim 1, wherein this basalis comprises:
Smooth basic unit; And
The intermediate layer in this smooth basic unit, has surface texture,
Wherein this active layer is conformal to constitute this surface microstructure with this surface texture.
11. photo-electric conversion element as claimed in claim 1, wherein this basalis is smooth basic unit, and this active layer has flat rear surface, is arranged in this smooth basic unit.
12. the manufacturing approach of a photo-electric conversion element comprises:
Basalis is provided;
Form surface microstructure on this basalis; This surface microstructure comprises a plurality of concave units of repetition; Each this concave units comprises three planes of intersection; Be formed with recessed cusp at infall, these three planes normal vector angle on any two planes are each other spent to the scope of 120 degree between 60; And
Form active layer, on this surface microstructure and conformal with this surface microstructure.
13. the manufacturing approach of photo-electric conversion element as claimed in claim 12, wherein these three planes are vertical each other.
14. the manufacturing approach of photo-electric conversion element as claimed in claim 12, wherein formed each this concave units is the inverted triangle wimble structure.
15. the manufacturing approach of photo-electric conversion element as claimed in claim 12, wherein these three planes of formed each this concave units are to be made up of cubical three cross facets.
16. the manufacturing approach of photo-electric conversion element as claimed in claim 12 is wherein forming in this surface microstructure this step on this basalis, this surface microstructure is directly on this basalis.
17. the manufacturing approach of photo-electric conversion element as claimed in claim 12 wherein comprises in this surface microstructure of formation this step on this basalis:
Smooth basic unit is provided;
Form the intermediate layer, have this surface microstructure; And
This intermediate layer is arranged in this smooth basic unit,
Wherein this active layer is conformal being formed on this surface microstructure.
18. the manufacturing approach of a photo-electric conversion element comprises:
The flat base layer is provided;
Form active layer on this flat base layer; And
Form surface microstructure on this active layer; This surface microstructure comprises a plurality of concave units of repetition; Each this concave units comprises three planes of intersection; Be formed with recessed cusp at infall, these three planes normal vector angle on any two planes are each other spent to the scope of 120 degree between 60.
19. the manufacturing approach of photo-electric conversion element as claimed in claim 18, wherein these three planes are vertical each other.
20. the manufacturing approach of photo-electric conversion element as claimed in claim 18, wherein these three planes of formed each this concave units are that inverted triangle wimble structure or cubical three cross facets constitute.
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| CN102487095B (en) * | 2010-12-02 | 2014-07-16 | 沙嫣 | Novel amorphous silicon thin film battery pack and manufacturing method thereof |
| TWI453927B (en) | 2011-06-29 | 2014-09-21 | Ind Tech Res Inst | Multi-reflection structure and photo-electric device |
| CN102509622A (en) * | 2011-10-27 | 2012-06-20 | 无锡英普林纳米科技有限公司 | Micro-structural working electrode of dye sensitized solar cell and preparing method thereof |
| CN103022200B (en) * | 2012-12-28 | 2015-07-08 | 中国科学院物理研究所嘉兴工程中心 | Efficient photovoltaic module in 3D (three-dimensional) regular trihedral-cone package |
| CN105227057A (en) * | 2014-05-29 | 2016-01-06 | 江苏太阳光伏科技有限公司 | A kind of solar panel |
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|---|---|---|---|---|
| US6127623A (en) * | 1998-07-03 | 2000-10-03 | Sharp Kabushiki Kaisha | Solar cell and production process therefor |
| CN1507075A (en) * | 2002-12-10 | 2004-06-23 | 北京力诺桑普光伏高科技有限公司 | Surface structure of monocrystalline silicon solar cell and its making process |
| JP2006210394A (en) * | 2005-01-25 | 2006-08-10 | Canon Inc | Unevenness forming method of silicon substrate surface |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127623A (en) * | 1998-07-03 | 2000-10-03 | Sharp Kabushiki Kaisha | Solar cell and production process therefor |
| CN1507075A (en) * | 2002-12-10 | 2004-06-23 | 北京力诺桑普光伏高科技有限公司 | Surface structure of monocrystalline silicon solar cell and its making process |
| JP2006210394A (en) * | 2005-01-25 | 2006-08-10 | Canon Inc | Unevenness forming method of silicon substrate surface |
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