CN101891464A - High temperature thermistor and manufacturing method thereof - Google Patents
High temperature thermistor and manufacturing method thereof Download PDFInfo
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- CN101891464A CN101891464A CN 201010221601 CN201010221601A CN101891464A CN 101891464 A CN101891464 A CN 101891464A CN 201010221601 CN201010221601 CN 201010221601 CN 201010221601 A CN201010221601 A CN 201010221601A CN 101891464 A CN101891464 A CN 101891464A
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Abstract
The invention relates to a high temperature thermistor and a manufacturing method thereof. The high temperature thermistor is formed by barium titanate, lead titanate, calcium titanate, strontium titanate, semi-conducting elements, silicon oxide, titanium oxide, alumina, manganese dioxide and magnesium oxide, wherein the semi-conducting elements are one or more of niobium oxide, yttrium oxide and antimony oxide. The manufacturing method is characterized by adding water to barium titanate, lead titanate and the like in a ball mill and finely grinding the mixture, discharging and drying the ground mixture, presintering the ground mixture for 2h, grinding the ground mixture in the ball mill, adding PVA adhesive solution, pelleting the mixture, forming the mixture through pressing by a tablet press, sintering the formed material to obtain semi-conducting ceramics, carrying out grinding and spraying the Al electrode, thus obtaining the product. The sintering potential barrier is increased in the sintering process by adding the Mg element, thus ensuring the grains to be fine and uniform and the voltage resistance to be high. The ceramic structure is denser by replacing Ba with Mg, thus being capable of blocking ionic migration in the abominable atmosphere and improving the stability in the strongly abominable atmosphere. The high temperature thermistor can withstand 500V voltage under extremely low oxygen partial pressure by being assembled in a sealed Al pipe.
Description
Technical field
The present invention relates to a kind of high-temperature thermistor and manufacture method thereof.
Background technology
Because Global climate change trend, weather environmental protection subject under discussion is suggested.Compare the resistance wire heating element, reliable, energy-conservation because of using posistor safety, so in the warm-air drier heating unit, use at present.
At present the posistor that uses of warm-air drier with (Pb, Ba) TiO3 is a principal crystalline phase, by lead displacement barium, its switch temperature is at 200-300 ℃.The manufacture method of this posistor is to use ball mill or disperse ball milling to mix, through press filtration, light-burned ball milling, add the tackiness agent granulating and forming again, in air, after sintering pottery under 1200-1400 ℃, the coating electrode forms thermistor chip then.Its grain size is not easy controlled, and compactness is lower, loses efficacy easily under severe environment.
Owing to consider the security of this class warm-air drier, heat generating components is sealed among the Al pipe, also need to use organic glue in manufacturing process, the heating thermistor chip is in thermal extremes and the extremely low state of oxygen pressure during energising, so high to the reliability requirement of thermistor.The thermistor chip security of domestic production at present is unsatisfactory.
Summary of the invention
The objective of the invention is at above-mentioned present situation, aim to provide a kind of proof voltage ability height, the ceramic structure densification can hinder ion migration, can press high-temperature thermistor and the manufacture method thereof that can stablize use under the extremely low state at thermal extremes and oxygen.
The implementation of the object of the invention is, high-temperature thermistor, with 50-85%mol barium titanate, 2-39mol lead titanate, 1-7mol calcium titanate, the 1-10mol strontium titanate is a main component, contains 0.12-0.13mol semiconductor element, glass substance: 1-2mol silicon oxide, the 1mol titanium oxide, the 0.2mol aluminum oxide is subjected to the main classes material: 0.08%mol Manganse Dioxide, 0.09mol magnesium oxide, wherein the semiconductor element is one or more in niobium oxides, yttrium oxide, the weisspiessglanz.
The manufacture method of high-temperature thermistor, get the 2-39mol lead titanate, the 1-7mol calcium titanate, the 1-10mol strontium titanate is a main component, contain 0.12-0.13mol semiconductor element, the 1-2mol silicon oxide, 1mol titanium oxide, 0.2mol aluminum oxide, 0.08mol Manganse Dioxide and 0.09mol magnesium oxide add water and mix levigate in ball mill, the discharging drying, 1050 ℃ of pre-burnings 2 hours, and broken in ball mill again, and adding powder weight ratio is 8% PVA binder solution, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets the high-temperature thermistor product.
The present invention has increased sintering potential barrier by adding the Mg element in sintering process, make crystal grain tiny evenly, has improved the proof voltage ability; Because Ba
2+Radius 1.42, and Mg
2+Radius be 0.72, by the position of Mg displacement Ba, make ceramic structure fine and close more, in abominable atmosphere, can hinder ion migration, can press stable use the under the extremely low state at thermal extremes and oxygen.Be assemblied in the Al pipe of sealing, under the extremely low severe environment of oxygen partial pressure, it is withstand voltage to stand 500V.
Embodiment
High-temperature thermistor of the present invention is by barium titanate, lead titanate, calcium titanate, strontium titanate, semiconductor element, silicon oxide, and titanium oxide, titanium oxide, aluminum oxide, Manganse Dioxide and magnesium oxide are formed.The semiconductor element is one or more in niobium oxides, yttrium oxide and the weisspiessglanz.
Manufacture method is that above-mentioned barium titanate, lead titanate etc. are added water mill in ball mill thin, and the discharging drying is light-burned 2 hours, broken in the ball mill, add the PVA binder solution, granulation, the tabletting machine moulding is burnt till and is the semiconductor pottery, through abrasive disc, spray Al electrode gets product.
Enumerate the specific embodiment of the invention below:
Example 1, get the 85mol barium titanate, the 7mol lead titanate, the 7mol calcium titanate, the 1mol strontium titanate, 0.13mol niobium oxides, 2.1mol silicon oxide, the 1mol titanium oxide, 0.2mol aluminum oxide, mix levigate 0.08mol Manganse Dioxide and 0.01mol magnesium oxide add water in ball mill, the discharging drying, light-burned 2 hours at 1050 ℃, and it is broken in ball mill again, adding powder weight ratio is 8% PVA binder solution, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets 32 * 12 * 2.4mm thermistor chip product.
Example 2, get the 85mol barium titanate, the 7%mol lead titanate, the 6mol calcium titanate, the 2mol strontium titanate, the 0.13%mol niobium oxides, the 2.1%mol silicon oxide, the 1%mol titanium oxide, the 0.2%mol aluminum oxide, 0.08%mol Manganse Dioxide and 0.04%mol magnesium oxide add water and mix levigate in ball mill, the discharging drying, light-burned 2 hours at 1050 ℃, and it is broken in ball mill again, adding powder weight ratio is 8% PVA binder solution, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets 32 * 12 * 2.4mm thermistor chip product.
Example 3, get 85mol barium titanate, 7mol lead titanate, 5mol calcium titanate, 3mol strontium titanate, 0.13mol niobium oxides, 2.1mol silicon oxide, the 1mol titanium oxide, mix levigate 0.2mol aluminum oxide, 0.08mol Manganse Dioxide and 0.09mol magnesium oxide add water in ball mill, the discharging drying, light-burned 2 hours at 1050 ℃, and it is broken in ball mill again, the PVA binder solution of adding 8%, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets 32 * 12 * 2.4mm thermistor chip product.
Comparative example 1, get 85mol barium titanate, 7mol lead titanate, 7mol calcium titanate, 1mol strontium titanate, 0.13mol niobium oxides, 2.1mol silicon oxide, the 1mol titanium oxide, mix levigate 0.2mol aluminum oxide, 0.08mol Manganse Dioxide add water in ball mill, the discharging drying, light-burned 2 hours at 1050 ℃, and it is broken in ball mill again, the PVA binder solution of adding 8%, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets 32 * 12 * 2.4mm thermistor chip product.
With routine 1-example 3 making methods, the semiconductor element is used the 0.12%mol weisspiessglanz instead, gets routine 4-example 6
Comparative example 2, get 57mol barium titanate, 35mol lead titanate, 3mol calcium titanate, 5mol strontium titanate, 0.12mol weisspiessglanz, 2.1mol silicon oxide, the 1mol titanium oxide, mix levigate 0.2mol aluminum oxide, 0.08mol Manganse Dioxide add water in ball mill, the discharging drying, light-burned 2 hours at 1050 ℃, and it is broken in ball mill again, adding powder weight ratio is 8% PVA binder solution, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets 32 * 12 * 2.4mm thermistor chip product.
With routine 1-example 3 making methods, the semiconductor element is used the 0.15%mol yttrium oxide instead, gets routine 7-example 9
Comparative example 3, get 50mol barium titanate, 39mol lead titanate, 1mol calcium titanate, 10mol strontium titanate, 0.15mol yttrium oxide, 2.1mol silicon oxide, the 1mol titanium oxide, mix levigate 0.2mol aluminum oxide, 0.08mol Manganse Dioxide add water in ball mill, the discharging drying, light-burned 2 hours at 1050 ℃, and it is broken in ball mill again, adding powder weight ratio is 8% PVA binder solution, granulation, pass through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes, through abrasive disc at 1290 ℃ of sintering, spray Al electrode gets 32 * 12 * 2.4mm thermistor chip product.
The applicant's use-case 1-example 9 has been done constituent content and performance comparison test with existing comparative example 1-comparative example 3 (getting 32 * 12 * 2.4mm thermistor chip product with traditional method), and test-results sees the following form:
From last table as seen, by the posistor that the present invention makes, under severe environment, the proof voltage ability has strengthened greatly, thereby has improved reliability.
Claims (2)
1. high-temperature thermistor, it is characterized in that with 50-85%mol barium titanate, 2-39mol lead titanate, 1-7mol calcium titanate, the 1-10mol strontium titanate is a main component, contain 0.12-0.13mol semiconductor element, glass substance: 1-2mol silicon oxide, 1mol titanium oxide, 0.2mol aluminum oxide, be subjected to the main classes material: 0.08mol Manganse Dioxide, 0.09mol magnesium oxide, wherein the semiconductor element is one or more in niobium oxides, yttrium oxide, the weisspiessglanz.
2. the method for preparing the described high-temperature thermistor of claim 1, it is characterized in that getting the 50-85mol barium titanate, the 2-39mol lead titanate, the 1-7mol calcium titanate, the 1-10mol strontium titanate, 0.12-0.13mol semiconductor element, the 01-2mol silicon oxide, the 1mol titanium oxide, 0.2mol aluminum oxide, mix levigate 0.08mol Manganse Dioxide and 0.09mol magnesium oxide add water in ball mill, the discharging drying, 1050 ℃ of pre-burnings 2 hours, and it is broken in ball mill again, weight ratio is 8% PVA binder solution in the adding powder, granulation, through the tabletting machine moulding, and became the semiconductor pottery in 30 minutes at 1290 ℃ of sintering, through abrasive disc, spray Al electrode gets the high-temperature thermistor product.
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| CN 201010221601 CN101891464B (en) | 2010-06-29 | 2010-06-29 | High temperature thermistor and manufacturing method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102603290A (en) * | 2012-03-26 | 2012-07-25 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material, thermistor therefrom for battery protection and manufacture method |
| CN102603291A (en) * | 2012-03-26 | 2012-07-25 | 常熟市林芝电子有限责任公司 | Thermosensitive ceramic material, thermosensitive resistor made from thermosensitive ceramic material and used for starting refrigerator, and preparation method |
| CN102617134A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material, thermal resistor made of thermal sensitive ceramic material and used for heating, and manufacture method for thermal resistor |
| CN102617132A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material, thermistor made of thermal sensitive ceramic material and used for yarn heating, and thermistor production method |
| CN102617136A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermosensitive ceramic material and electromobile thermosensitive resistor made of thermosensitive ceramic material and manufacturing method of thermosensitive resistor |
| CN102617133A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material and high-voltage-resistant thermistor prepared by using thermal sensitive ceramic material and preparation method |
| CN107056279A (en) * | 2017-03-23 | 2017-08-18 | 汕尾比亚迪实业有限公司 | Single donor doping positive temperature coefficient thermal sensitive ceramic and preparation method thereof |
| CN107631820A (en) * | 2017-09-25 | 2018-01-26 | 南京航伽电子科技有限公司 | A kind of pressure transmitter being suitable under low temperature environment |
| CN108727055A (en) * | 2018-06-27 | 2018-11-02 | 佛山市南海蜂窝电子制品有限公司 | A kind of PTC ceramic honey combs heating element and preparation method thereof |
| CN110467455A (en) * | 2019-08-20 | 2019-11-19 | 威海市科博乐汽车电子有限公司 | The preparation method of posive temperature coefficient thermistor for electric vehicle |
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| CN1237949A (en) * | 1996-11-20 | 1999-12-08 | 株式会社村田制作所 | Barium titanate-base semiconducting ceramic composition |
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| CN1237949A (en) * | 1996-11-20 | 1999-12-08 | 株式会社村田制作所 | Barium titanate-base semiconducting ceramic composition |
| US20060232910A1 (en) * | 2005-04-15 | 2006-10-19 | Ferro Corporation | Y5V dielectric composition |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102617133B (en) * | 2012-03-26 | 2013-10-16 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material and high-voltage-resistant thermistor prepared by using thermal sensitive ceramic material and preparation method |
| CN102603291A (en) * | 2012-03-26 | 2012-07-25 | 常熟市林芝电子有限责任公司 | Thermosensitive ceramic material, thermosensitive resistor made from thermosensitive ceramic material and used for starting refrigerator, and preparation method |
| CN102617134A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material, thermal resistor made of thermal sensitive ceramic material and used for heating, and manufacture method for thermal resistor |
| CN102617132A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material, thermistor made of thermal sensitive ceramic material and used for yarn heating, and thermistor production method |
| CN102617136A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermosensitive ceramic material and electromobile thermosensitive resistor made of thermosensitive ceramic material and manufacturing method of thermosensitive resistor |
| CN102617133A (en) * | 2012-03-26 | 2012-08-01 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material and high-voltage-resistant thermistor prepared by using thermal sensitive ceramic material and preparation method |
| CN102603290A (en) * | 2012-03-26 | 2012-07-25 | 常熟市林芝电子有限责任公司 | Thermal sensitive ceramic material, thermistor therefrom for battery protection and manufacture method |
| CN107056279A (en) * | 2017-03-23 | 2017-08-18 | 汕尾比亚迪实业有限公司 | Single donor doping positive temperature coefficient thermal sensitive ceramic and preparation method thereof |
| CN107056279B (en) * | 2017-03-23 | 2018-06-05 | 汕尾比亚迪实业有限公司 | Single donor doping positive temperature coefficient thermal sensitive ceramic and preparation method thereof |
| CN107631820A (en) * | 2017-09-25 | 2018-01-26 | 南京航伽电子科技有限公司 | A kind of pressure transmitter being suitable under low temperature environment |
| CN108727055A (en) * | 2018-06-27 | 2018-11-02 | 佛山市南海蜂窝电子制品有限公司 | A kind of PTC ceramic honey combs heating element and preparation method thereof |
| CN110467455A (en) * | 2019-08-20 | 2019-11-19 | 威海市科博乐汽车电子有限公司 | The preparation method of posive temperature coefficient thermistor for electric vehicle |
| CN110467455B (en) * | 2019-08-20 | 2022-02-08 | 威海市科博乐汽车电子有限公司 | Preparation method of positive temperature coefficient thermistor for electric automobile |
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