CN101885466B - Method for manufacturing binary optical glass lens and packaging MEMS (Micro-electromechanical System) infrared detector - Google Patents
Method for manufacturing binary optical glass lens and packaging MEMS (Micro-electromechanical System) infrared detector Download PDFInfo
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Abstract
The invention discloses a method for manufacturing and packaging an MEMS (Micro-electromechanical System) infrared detector by a binary optical glass lens, which comprises the following steps of: firstly, designing a binary optical mask plate according to a thermopile infrared detector to be packaged; secondly, carrying out nesting and etching three times on a silicon chip by using the binary optical mask plate, etching a step structure with binary optical diffraction property on the silicon chip; and thirdly, carrying out anodic bonding on the silicon chip and the glass chip to ensure that the glass chip and specific patterns form a vacuum sealing cavity, then heating for melting and forming glass, manufacturing a binary optical lens on the glass, then thermally annealing for eliminating internal stress of the glass, and removing a silicon mould. The lens glass chip and an infrared detector chip are aligned and bonded to realize the packaging of the infrared detector, and infrared rays are focused on an absorption region of the infrared detector. The optical lens manufactured by using the method can effectively improve the detection sensitivity of the thermopile infrared detector.
Description
Technical field
The present invention relates to the manufacturing approach of a kind of MEMS (microelectromechanical systems) lens, relate in particular to a kind of manufacturing of binary optical glass lens and the method for packaging MEMS (Micro-electromechanical System) infrared detector.
Background technology
Along with the continuous development of semi-conductor industry and MEMS (microelectromechanical systems) technology, use advanced MEMS micro-processing technology can produce the infrared thermal imager of superior performance.Non-heat of cooling pile formula infrared eye is with low cost with it, technology is simple and characteristics such as reliability height, is widely used in thermal infrared imager, and it can at room temperature be worked.The infrared ray absorbing zone is arranged in thermoelectric pile formula detector; Because it can absorb infrared ray effectively; So under the infrared radiation can heat up rapidly in the infrared absorption of detector zone; Thermoelectric pile formula infrared eye goes to survey this variation of temperature with regard to being to use the thermoelectric pile that is in series by some thermopairs, surveys ultrared purpose thereby reach.Two dimension thermoelectric pile formula infrared detector array is used to infrared imaging, and this two-way detector array is called infrared focal plane array (FPAs).In order to reach better image quality, the size of current thermoelectric pile formula infrared eye is more and more littler, and this just must make its infrared ray absorbing zone reduce, and has so just influenced detection sensitivity.Do not reduce infrared ray in order to reduce thermoelectric pile formula infrared eye size and effectively collect area, especially need be on detector integrated infrared condenser lens.
Existing infrared ray condenser lens probably is divided into two kinds of preparation methods: first kind of method preparation that is to use the optical material hot reflux; The problem of this method is to be difficult to control the appearance and size of institute's one-tenth lens; It is determined by the character of material fully; Design lens parameter that can not be random, the focal length of the lens of producing like this is just uncontrollable, and this greatly reduces the practicality of lens.Second kind just is to use repeatedly nested etching Ge material; Making has the diffraction lens of binary optical characteristic; Though this method can accurately be controlled lens sizes, focal length is controlled, because Ge is lower for the infrared ray transmitance; Be not good infrared lenses material, it is still too low to ultrared transmitance.
Summary of the invention
The purpose of this invention is to provide that a kind of low cost, focal length with infrared ray focusing function is controlled, the manufacturing approach of the binary optical glass lens array of high light gathering efficiency; Can realize infrared ray is focused on the infrared absorption zone of thermoelectric pile formula infrared eye, improve the detection sensitivity of thermoelectric pile formula infrared eye.
The present invention adopts following technical scheme: a kind of manufacturing of binary optical glass lens and the method for packaging MEMS (Micro-electromechanical System) infrared detector; May further comprise the steps: the first step; According to the MEMS thermoelectric pile formula infrared eye that will encapsulate; Confirm the physical dimension of binary optical lenses, design the binary optical mask plate.Second step, use the binary optical mask plate on silicon wafer, to carry out nested etching three times, on silicon wafer, etch ledge structure with binary diffractive optic character.The 3rd step; Above-mentioned silicon wafer and Pyrex7740 glass wafer are carried out anode linkage; Make Pyrex7740 glass wafer and above-mentioned specific pattern form the vacuum seal cavity, heating makes the glass melting moulding then, at Pyrex7740 making binary optical lenses on glass; Carry out thermal annealing then and eliminate the glass internal stress, and remove silicon mould.The 4th step; The binary optical lenses glass wafer is aimed at the MEMS infrared detector chip, used solder to carry out bonding, realize the encapsulation of infrared eye; Height through control encapsulation scolder focuses on infrared ray on the infrared ray absorbing zone of infrared eye.
In the technique scheme, described tri-layer mask plate is according to the binary optical Design Theory,
k=0; 1; 2,3,4; 5,6......; Wherein f is the focal length of lens, and (k m) is the radius of the continuum of pattern on the m layer mask plate to r, and λ is the ultrared wavelength that thermoelectric pile formula infrared eye is wanted detector.The micro fabrication of patterning can be the RIE dry etch process on the said silicon wafer.RIE etching depths at different levels calculate according to formula
and get on the said silicon wafer; Wherein λ is an infrared ray wavelength in a vacuum; N is the refractive index of Pyrex glass, and m is the layer sequence number of mask plate.Three layers of nested etching of described silicon chip have been used the lithography alignment technology.The described silicon mould that etches satisfies the infrared ray diffraction conditions.Described silicon wafer and Pyrex7740 glass surface bonding technology are anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.Silicon wafer and Pyrex7740 glass wafer carry out necessary cleaning and polishing according to the technological requirement of anode linkage in the 3rd step.The process conditions of thermal annealing are described in the 3rd step: annealing region is in 510 ℃～560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.Erode the Si mould in the 3rd step and be to use 25% TMAH in the single face corrosion clamp, to carry out, TMAH solution keeps temperature in water-bath be 90 ℃.In the 4th step, package of MEMS thermoelectric pile formula infrared eye uses low temperature glass solder, and the height of control glass solder focuses on infrared ray in the infrared ray absorbing zone of detector.
The present invention obtains following effect:
1. the present invention passes through the step degree of depth of control etching, and the radius of each layer step, and the size of specific wavelength infrared ray diffraction conditions is satisfied in design.Design the binary optical silicon mould; Continuous circular zone radius size is calculated through formula
on the mask plate; K=0; 1; 2; 3...... wherein k is light tight zone boundary on the odd number interval scale mask plate, the degree of depth of each etching is calculated through
.In order to produce the ultrared condenser lens of 2.2um wavelength, the degree of depth of three RIE etchings is respectively 2.34um, 1.17um, 0.59um.
2. the present invention makes glass have higher vacuum tightness in the annular seal space that forms behind the silicon bonding of step (vacuum tightness is high more good more with having through the pressure of control during anode linkage; Can fit fully with silicon mould behind the glass ware forming like this); When making the glass heat moulding; Under action of negative pressure (under forming temperature, external pressure is greater than internal pressure), glass convexes to form sphere (owing to be vacuum to inside; Complete and the binary optical silicon mould applying of melten glass), the stair step patterns that so just will satisfy the infrared ray diffraction conditions has been transferred to the surface of glass wafer.So just realized the purpose for glass processing binary diffractive optic lens, because this method can be carried out the wafer level processing of binary optical lenses, avoided the expensive process of direct etching processed glass simultaneously, this method is simple, and cost is low.This method is a glass melting attitude vacuum forming, need not make lens as the hot reflux method, and strict control glass ware forming zone, forming temperature and molding time only need get final product glass heats to molten state.With respect to passing through sputter on substrate, etching glass material; And strict control forming temperature and molding time are controlled the shape of optical lens; The inventive method is simpler; Cost is lower, and through controlling the degree of depth of mask plate pattern dimension and etching, can make the controlled infrared diffractive lens that is applicable to respective wavelength of focal length.
3. anode linkage has the bond strength height, the characteristics of good leak tightness, and the present invention adopts anode linkage formation closed cavity, in the heating process in the 3rd step, is difficult for the generation leakage and causes moulding to be failed.400 ℃ of temperature, under the bonding conditions of voltage direct current 600V, anode linkage can reach better sealing effectiveness.
4. the annealing process in the 3rd step of adopting can effectively be eliminated Pyrex7740 glass and bear the stress that forms in the high temperature vacuum forming process, thereby makes its strength and toughness higher.Under this condition, anneal; The stress of can effectively decorporating; Can also make the shape of microcavity not have change basically, and the too high encapsulation that is prone to cause the microcavity shape to change and is unfavorable for the road, back of annealing temperature, low excessively annealing temperature then can't effectively be removed the glass internal stress.
5. the Pyrex7740 glass that the thermal expansivity of the present invention's preparation and Si is suitable is not easy to make the good disk of bonding to damage because of thermal mismatching produces as glass binary optical lenses structure when the preparation lens arra; Provide convenience for road, back encapsulation thermoelectric pile formula infrared sensor, be difficult for taking place thermal mismatching when being heated in the technological process.The present invention can prepare the chamber of lens and encapsulation infrared sensor simultaneously, and the vacuum environment of formation will help ultrared seeing through, thereby absorbed by infrared ray sensor.
6. the present invention adopts the RIE dry etch process at the silicon face processing step, and technological process is simple and reliable, and the depth-to-width ratio of etching is high, and lateral etching is little, and dimension of picture is good, can realize the wafer level manufacturing of binary optical lenses silicon mould.
7. the present invention is based on the traditional MEMS processing technology, because Pyrex7740 glass and Si thermal mismatching are very little, so the present invention uses the Si mould.At first on the Si sheet, process the binary optical ledge structure; Size need according to the IR wavelength and the focal length of lens that will focus on regulate; The present invention uses and has the mould of the silicon wafer of binary diffractive optic structure as melten glass, the problem of having avoided glass to be difficult to process.
8. among the present invention; The Si disk and the Pyrex7740 glass that have the step cavity carry out anode linkage under high vacuum condition, the softening point temperature that under normal pressure, is heated to glass then carries out thermoforming, under the effect of microcavity external pressure difference; The recessed moulding of Pyrex7740 glass; Because in the sealing body of wall is condition of high vacuum degree, so molten glass and silicon mould are fitted fully, the binary optical step is just transferred on the surface of glass wafer effectively like this.The size of this glass lens and focal length can be regulated through the size of etching step on silicon chip.
9. the present invention makes the firm chemical bonding of formation between glass and the silicon through bonding technology, makes the continuous mechanical interface of formation between silicon and the glass.Have close thermal expansivity between Pyrex7740 glass and the silicon, have good heat coupling, therefore stable mechanical property can form the interface of low stress after the glass heat moulding, so just created strong condition for the glass heat moulding.Thermal mismatch stress between simple glass and the silicon is bigger, in the elevated temperature heat forming process, will produce warpage, and surface irregularity causes Forming Quality poor.10. with respect to common fusion bonding method, the present invention forms the Si-O key through the method for anode linkage between silicon and glass; Form more firm chemical bonding between glass micro-cavity and the silicon chip when making encapsulation; So at high temperature, even glass becomes molten state, glass melt also can be owing to the strong effect of Si-O key; Be fixed on the origin-location, the glass of avoiding melting is subjected to displacement at silicon face.
11. the present invention uses Pyrex7740 glass to make the binary optical Infrared Lens; Because Pyrex glass has very high transmissivity (greater than 90%) to visible light and near-infrared band light, with respect to the lens that Ge processes huge advantage is arranged so use glass to make the infrared ray binary optical lenses.
12. the anode key with have the intensity height, the characteristics of good airproof performance, the present invention adopts anode linkage to form annular seal space, in the 4th step hot briquetting process, can not produce gas leakage and causes the moulding failure.Temperature is carried out 600V direct current bonding under 400 ℃, respond well.
13. the present invention uses the method for low temperature glass solder to realize the encapsulation of infrared eye, the fusing point of glass solder is lower, and can carry out the spot heating bonding, has so just avoided in the bonding process high temperature to the influence of device.Through the thickness of control bonding region ratio scolder, can realize infrared ray is focused on the infrared ray absorbing zone of detector, improved detector sensitivity so greatly.Can adopt epoxy encapsulation in addition, perhaps the method for metallic bonding realizes sealing
14. what the present invention adopted is conventional electronics micro fabrication, technology is reliable, and is with low cost, can realize the wafer level manufacturing.Binary optical lenses is to be produced on the glass wafer, because Pyrex7740 glass is a kind of inorganic material, impermeability is very good, can remove to encapsulate thermoelectric pile formula infrared eye with the glass wafer of producing.
15. adopt single face anchor clamps corrosion silicon can protect the silicon substrate of sensor chip effectively among the present invention, not only etching speed is very fast under 90 ℃ of temperature for 25%TMAH simultaneously, and to glass micro-cavity etching not basically.
The glass wafer of making that has the infrared condenser lens of binary optical is used for the encapsulation of thermoelectric pile formula infrared eye; Can infrared system be focused on effectively the infrared ray absorbing zone of thermoelectric pile formula infrared eye; The effective collecting zone of infrared ray just becomes big like this, has improved detector sensitivity.
Description of drawings
Fig. 1 is thermoelectric pile formula infrared sensor chip and corresponding three layers of binary optical mask plate synoptic diagram
Fig. 2 is the silicon mould synoptic diagram of three nested RIE etching binary optical structures on the Si disk
Fig. 3 is for using the schematic cross-section of silicon wafer as the mould molding glass wafer
Fig. 4 is the synoptic diagram of binary optical glass lens packaging MEMS (Micro-electromechanical System) infrared detector
Embodiment
A kind of manufacturing of binary optical glass lens and the method for packaging MEMS (Micro-electromechanical System) infrared detector may further comprise the steps:
The first step, (used herein is MEMS thermoelectric pile formula infrared eye, and the thermopair that thermoelectric pile is to use many groups to connect each other carries out thermometric according to the MEMS infrared eye.According to Seebeck effect, when there is temperature difference in the thermopair two ends, will produce voltage, and cold and hot end temperature difference is big more, output voltage is big more.The detection sensitivity of many group thermopair series connection can raising thermoelectric piles.The hot junction of thermoelectric pile is contacted with ultrared absorption region; And cold junction is away from infrared ray absorbing zone, and carries out heat insulationly with adiabatic material, and heat up because of the absorption infrared ray in the infrared ray absorbing zone like this; Externally voltage of output has realized measuring ultrared purpose.Thermopair is connected to form by two kinds of material different, and the most frequently used is exactly n type polysilicon/aluminium.We are used herein to be exactly the thermopair of n type polysilicon/aluminum) chip size, the size and the focal length of the binary optical lenses of confirm making, design layout is also confirmed etching depth, the setting focal length is 1mm; 5mm, 10mm, 50mm; 100mm realizes the making of different focal lens mask plate
Second step, utilize the Si micro fabrication to go up etching and form specific pattern at Si disk (for example 4 inches disks), the micro fabrication that former of said Si goes up patterning is a kind of in RIE, DRIE or the ICP dry etching; The depth ratio of three nested etchings is 4: 2: 1, and a promptly back etching depth is the half the of a preceding etching depth, and etching depth can be got 2.3um for the first time; 2.4um, 2.5um, 2.6um; 2.7um, 2.8um, thus obtain the ultrared focusing function of different-waveband.
In the 3rd step, (market can be buied for a kind of brand of Pyrex, U.S. CORNING-corning company production with above-mentioned Si disk and Pyrex7740 glass wafer; Usually through polishing, its size is identical with the Si disk) under vacuum condition, carry out anode linkage, make Pyrex7740 above-mentioned specific pattern on glass form seal chamber, the disk that bonding is good is heated to 820 ℃～880 ℃ under an atmospheric pressure; Under this temperature, be incubated 10～20min, for example temperature can be chosen for 820 ℃, and 840 ℃, 850 ℃; 860 ℃, 880 ℃, insulation 10～20min, the time can be chosen for: 10min; 12min, 15min, 18min, 20min; Glass and silicon mould after chamber external and internal pressure official post is softening are fitted fully, form the binary optical lenses surface, are cooled to lower temperature; As 20-25 ℃, it is 22 ℃ for example, then with above-mentioned disk stress relieving by annealing under normal pressure; This normal pressure is meant an atmospheric pressure, uses the single face corrosion clamp, and the TMAH solution of use 25% is incubated the Si layer that under 90 ℃, erodes as the glass micro-cavity mould in water-bath.
The 4th step; Size according to packaging MEMS (Micro-electromechanical System) infrared detector; Place low temperature glass solder (G018-226SCHOTT solder glass, the low temperature glass solder that a kind of German Schott AG produces) at packaging area, and the Pyrex7740 glass wafer that will have a binary optical lenses is aimed at the MEMS infrared detector chip; Make glass solder fusion bonding then, realize the air-tight packaging of detector.The height of glass solder can be controlled at 1mm～10mm, and bonding temperature is 400 ℃～450 ℃, and the bonding time is 10～15min, and the height of glass solder can be chosen 1mm; 2mm, 5mm, 7mm, 8mm; 10mm, bonding temperature choose 400 ℃, and 420 ℃, 440 ℃; 450 ℃, the bonding time is chosen for 10min, 12min, 15min.
In the technique scheme, described Si disk etching technics is the RIE etching, and the etching gas that uses is SF6; The pressure of reaction chamber is 10Pa; The AC power 200W of etching, speed of etching is 0.5um/min, silicon mould and Pyrex7740 glass surface bonding technology are anode linkage in the 3rd step; The typical process condition is: 400 ℃ of temperature, voltage: 600V.The process conditions of thermal annealing are described in the 3rd step: annealing region is in 510 ℃～560 ℃, and annealing temperature can be chosen for 530 ℃, and 540 ℃, 550 ℃, 560 ℃, the annealing temperature retention time is 30min, and is slowly air-cooled then to normal temperature (for example 25 ℃).
Preferred version of the present invention is following: in the technique scheme, the micro fabrication of patterning can be the RIE dry etch process on the said silicon wafer, is etched under the 10Pa pressure and uses SF
6Gas etching Si, power are 200W.Described silicon wafer and Pyrex7740 glass surface bonding technology are anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.The process conditions of thermal annealing are described in the 3rd step: annealing region is in 510 ℃～560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.The 3rd step silicon wafer and Pyrex7740 glass wafer carry out necessary cleaning and polishing according to the technological requirement of anode linkage.The depth of pattern of etching is 4: 2: 1 in second step, and the time of etching is 5min for the first time, and the back reduces by half successively.
A kind of manufacturing of binary optical glass lens and the method for packaging MEMS (Micro-electromechanical System) infrared detector may further comprise the steps:
The first step; Survey ultrared wavelength (for 2.2um) according to thermoelectric pile formula infrared eye; Design layout; Figure on the mask plate is the annulus of concentric, and each annular radii of m layer mask plate calculates according to formula
Second step, utilize reactive ion etching method on 4 inches Si disks successively etching form specific pattern (in fact seeing on the three-dimensional, be cutting on silicon chip; Be pattern on the two dimension), the degree of depth of three etchings is respectively 2.34um, 1.17um; 0.59um this pattern is that every layer of bench height of the step groove array etching of ascending a height is 0.59um, the step overall height is 4.1um; Silicon chip is through polishing
The 3rd step is with (4 inches) Pyrex7740 glass wafer (a kind of brand of Pyrex, the U.S. CORNING-corning company production of above-mentioned Si disk and same size; Market can be buied, through polishing) under 0.1Pa pressure, carry out bonding, be bonded on the EVG-501 anode linkage machine and carry out; Make Pyrex7740 above-mentioned specific pattern on glass form seal chamber, bonding surface requires to carry out routine according to anode linkage and cleans and polish before bonding, keep highly cleaning and minimum surfaceness; To satisfy the requirement of conventional anode linkage, the disk that bonding is good is heated to 880 ℃ under an atmospheric pressure, under this temperature, be incubated 20min; Glass and binary optical silicon mould after chamber external and internal pressure official post is softening are fitted fully, are cooled to 25 ℃ of normal temperature, with above-mentioned disk stress relieving by annealing under an atmospheric pressure; In the technique scheme; Former of described Si is an anode linkage with Pyrex7740 glass surface bonding technology, and process conditions are: 400 ℃ of temperature, voltage: 600V.The process conditions of thermal annealing are: annealing region is in 510 ℃～560 ℃, and annealing temperature can be chosen for 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to 25 ℃ of normal temperature then.Then above-mentioned disk is fixed on (corrosive liquid can only get into not the bottom of disk on disk, realize the single face corrosion) in the single face corrosion clamp; Pour the concentration that configures into and be 25% TMAH solution; Anchor clamps are put into water-bath, and serviceability temperature instrumentation amount TMAH solution temperature guarantees that its temperature stabilization is at 90 ℃; Thereby the removal silicon mould, thereby prepare glass binary optical lenses array with diffraction focusing function.
The 4th step; Packaging area at MEMS thermoelectric pile formula infrared eye is placed glass solder (G018-226SCHOTT solder glass; The low temperature glass solder that a kind of German Schott AG produces); The height of glass solder is 5mm, and the binary lens glass disk of making is aimed at the detector disk, under 440 ℃, carries out the glass solder bonding then; The bonding time is 15min, and encapsulation back glass lens array can focus on infrared ray the infrared ray absorbing zone of thermoelectric pile formula infrared eye effectively like this.
The present invention is technological through the MEMS processing and manufacturing: reactive ion etching Si disk; Form the binary diffractive optic step; The anode linkage that carries out with Si sheet and Pyrex7740 glass utilizes the negative pressure of vacuum Technology for Heating Processing again, produce have infrared focusing function wafer-level glass binary optical lenses array; Technical maturity, technology is reliable.Glass to ultrared transmitance up to more than 90%, and the binary diffractive optic lens on 8 rank to ultrared diffraction efficiency also more than 84%, this method can effectively reach the focusing infrared function.
The glass wafer of making among the present invention that has the binary lens arra; Can be used for package of MEMS thermoelectric pile formula infrared eye; Can all infrared rays that shine on the chip all be focused on small infrared ray absorbing zone, this is actually the infrared absorption area that has increased detector, has reached the purpose that improves infrared eye sensitivity; Use the thermoelectric pile formula infrared eye of integrated binary glass lens to remove to make FPAs, can improve the image quality of thermal infrared imager widely.
Claims (8)
1. the method for the manufacturing of a binary optical glass lens and packaging MEMS (Micro-electromechanical System) infrared detector is characterized in that, comprises following processing step:
The first step, according to the MEMS thermoelectric pile formula infrared eye (1) that will encapsulate, confirm the physical dimension of binary optical lenses, design binary optical mask plate (2),
Second step, use binary optical mask plate (2) on silicon wafer (3), to carry out three times nested etching, on silicon wafer (3), etch ledge structure (4) with binary diffractive optic character,
The 3rd step, above-mentioned silicon wafer (3) and Pyrex7740 glass wafer (5) are carried out anode linkage, make Pyrex7740 glass wafer and above-mentioned ledge structure (4) form vacuum seal cavity (6) with binary diffractive optic character; Under an atmospheric pressure, be heated to 820 ℃～880 ℃ then; Insulation 10～20min makes the Pyrex7740 glass melting form binary optical lenses (7), carries out thermal annealing then and eliminates the glass internal stress; And removal silicon mould
The 4th step; Binary optical lenses (7) is aimed at MEMS thermoelectric pile formula infrared eye (1) chip, used solder (9) to carry out bonding, realize the encapsulation of infrared eye; Through the height of control scolder (9), infrared ray is focused on the infrared ray absorbing zone of infrared eye (8).
2. the method for the manufacturing of binary optical glass lens according to claim 1 and packaging MEMS (Micro-electromechanical System) infrared detector; It is characterized in that in the first step going out the pattern dimension of binary optical lenses, confirm light and shade zone radius and layout on each layer mask plate according to the binary optical Design Theory.
3. the method for the manufacturing of binary optical glass lens according to claim 1 and packaging MEMS (Micro-electromechanical System) infrared detector is characterized in that described in second step that the micro fabrication of patterning is reactive ion etching (RIE) or inductively coupled plasma etching (ICP) on the silicon wafer.
4. according to the manufacturing of claim 1 or 3 described binary optical glass lens and the method for packaging MEMS (Micro-electromechanical System) infrared detector; What it is characterized in that adopting in second step is the technology that lithography alignment carries out the nested dry etching silicon wafer of tri-layer mask plate; Follow-up etching will once accurately be aimed to obtain good diffraction step with the front; Make silicon mould have the binary optical characteristic, bench heights at different levels satisfy the ultrared diffraction conditions of specific wavelength.
5. the method for the manufacturing of binary optical glass lens according to claim 1 and packaging MEMS (Micro-electromechanical System) infrared detector; It is characterized in that described in second step that the height of steps at different levels on the silicon wafer calculates according to the focal length of binary optical lenses, and through accurate control bench heights at different levels of control dry etching time.
6. the method for the manufacturing of binary optical glass lens according to claim 1 and packaging MEMS (Micro-electromechanical System) infrared detector; It is characterized in that silicon wafer and the Pyrex7740 glass wafer surface bond technology described in the 3rd step is anode linkage; Process conditions are: 400 ℃ of temperature, voltage: 600V.
7. according to the manufacturing of claim 1 or 6 described binary optical glass lens and the method for packaging MEMS (Micro-electromechanical System) infrared detector, it is characterized in that silicon wafer and Pyrex7740 glass wafer are under vacuum environment, to carry out anode linkage in the 3rd step.
8. the method for the manufacturing of binary optical glass lens according to claim 1 and packaging MEMS (Micro-electromechanical System) infrared detector; It is characterized in that eroding silicon mould in the 3rd step; Be to use 25% TMAH solution in the single face corrosion clamp, to corrode, and TMAH solution is incubated at 90 ℃ in water-bath.
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| CN101497422A (en) * | 2009-01-20 | 2009-08-05 | 东南大学 | Low-temperature glass solder bonding and encapsulating method based on disc level glass micro-chamber |
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| CN101885466A (en) | 2010-11-17 |
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