CN101882463A - Multiposition ferroelectric memory and voltage application method thereof - Google Patents
Multiposition ferroelectric memory and voltage application method thereof Download PDFInfo
- Publication number
- CN101882463A CN101882463A CN 200910221812 CN200910221812A CN101882463A CN 101882463 A CN101882463 A CN 101882463A CN 200910221812 CN200910221812 CN 200910221812 CN 200910221812 A CN200910221812 A CN 200910221812A CN 101882463 A CN101882463 A CN 101882463A
- Authority
- CN
- China
- Prior art keywords
- ferroelectric
- thin film
- ferroelectric thin
- electrode
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention belongs to the technical field of microelectronics, and relates to a multiposition ferroelectric memory and a voltage application method thereof. In the invention, a layer of uneven step-shaped ferroelectric film material with different thicknesses is constructed by utilizing the characteristic that the polarization reversal of the ferroelectric film material can occur only when an external electric field reaches a coercive field, each step corresponds to one thickness and further respectively corresponds to a certain coercive voltage, and the polarization reversal of the ferroelectric film material with the corresponding step thickness is carried out by applying different external voltages. A multiposition data storing function can be realized by combining the ferroelectric film materials with different step thicknesses in a single storage unit. A multiposition storage device processed by adopting the method of the invention can greatly improve the storage density and lower the production cost.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to a kind of multiposition ferroelectric memory and voltage application method thereof.
Background technology
Storer occupies critical role in semi-conductor market, according to investigations, only DRAM (Dynamic RandomAccess Memory) and Flash just occupy 15% of whole market for two kinds.Along with progressively popularizing of portable electric appts, the market of nonvolatile memory is also increasing, and Flash accounts for 90% of nonvolatile memory market at present.But along with the progress of semiconductor technology, Flash has run into increasing technical bottleneck, and tunnel oxide can not be along with the development of integrated circuit technology attenuate unrestrictedly, and according to ITRS 2007, Flash will be difficult to go beyond the 32nm process node.The thinking that addresses this problem is research and development nonvolatile memories of new generation, mainly contain magnetic store (MRAM), phase transition storage (PCM), Memister (ReRAM) and ferroelectric memory (FeRAM), wherein ferroelectric memory is realized commercialization at first, has very strong commercial potential quality.
The spontaneous polarization that ferroelectric memory utilizes ferroelectric material to have, and the character that can under External Electrical Field, reverse of spontaneous polarization vector and realize memory function.The disclosed ferroelectric memory of prior art generally adopts the material of perovskite structure series, for example lead zirconate titanate, i.e. Pb (Zr, Ti) alloy of O3 (hereinafter to be referred as PZT).The principal character of this material is to have ferroelectricity, promptly has the relation of ferroelectric hysteresis loop between electric polarization and the external electric field.This specific character makes it to be very suitable for doing storer, two states of its residual polarization corresponding respectively " 0 " and the one state of storer, and can change store status or come its polarized state of sensing by peripheral circuit by the direction that changes external electric field, read information.
Traditional ferroelectric storage cell adopts the structure of storehouse form usually, as shown in Figure 1.With the 1T1C structure is example, its formation method generally is to form on the present silicon substrate 10 after transistorized grid 12, gate dielectric 14 and the source/drain regions 16, cover last layer dielectric layer 20 again, in dielectric layer 20, form the end that contact hole connector 22 is connected to source/drain regions 16 then, on contact hole connector 22, form ferroelectric storage cell at last.Traditional ferroelectric storage cell is with " planar fashion " storehouse from bottom to top, forms ferroelectric thin film 26 on first electrode 24, and forms second electrode 28 on ferroelectric thin film 26.This kind ferroelectric storage cell must provide enough areas of plane in order to keep enough electric capacitys, with the permanence that keeps storing data.Therefore, in order to realize the storage density of ferroelectric memory, on the one hand, can increase the integration density of ferroelectric storage cell; On the other hand, can in single storage unit, store long numeric data.
Obviously, when increasing the storage density of ferroelectric memory, there is following shortcoming: along with the continuous increase of ferroelectric storage cell integration density, relatively by preceding a kind of method, the usable area of ferroelectric storage cell will constantly dwindle, and tend to cause the problem of electric capacity deficiency like this.And adopt a kind of method in back can under the prerequisite that does not reduce original ferroelectric storage cell usable area, improve storage density effectively, thereby reduced production cost widely.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, propose a kind of multiposition ferroelectric memory and voltage application method thereof, the present invention can realize the structure of ferroelectric memory multidigit storage, to improve storage density, reduces production costs.
The multiposition ferroelectric memory that the present invention proposes is by making up the uneven step-like ferroelectric thin-flim materials with multiple different-thickness of one deck, and is implemented in the multidigit memory function of storage long numeric data in the single storage unit by the ferroelectric thin film that makes up different step thicknesses.It is characterized in that comprising step:
(1) the deposit first metal electrode membraneous material on silicon substrate;
(2) the uneven step-like ferroelectric thin-flim materials of preparation one deck on first metal electrode with different-thickness;
(3) the deposit second metal electrode membraneous material on ferroelectric thin film.
Among the present invention, the uneven method with step-like ferroelectric thin film of different-thickness of preparation one deck comprises nano impression on first electrode, mechanical stamping and advanced photoetching and etching technique.
Among the present invention, ferroelectric thin-flim materials comprises lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium and polyvinylidene fluoride base ferroelectric material; Described first metal electrode comprises platinum, ruthenium, iridium, chromium billon and yttrium oxide; Described second metal electrode comprises platinum, ruthenium, iridium, chromium billon and yttrium oxide.
Another object of the present invention is to provide the voltage application method of described multiposition ferroelectric memory, because need applying the external voltage of different sizes, the ferroelectric thin film of different-thickness could realize polarization reversal, the external voltage of the different sizes of the corresponding successively n kind of the ferroelectric thin film of n kind different-thickness.With n=2 is example, n 〉=2 o'clock and the like, concrete steps comprise:
(1) between first electrode and second electrode, apply a higher forward voltage V2, make all reverse polarizations of ferroelectric thin film at two different step thicknesses places,, corresponding first store status of this state;
(2) apply low reverse voltage-V1 between first electrode and second electrode, make the ferroelectric thin film of step thicknesses smaller part be inverted to the forward polarization, the ferroelectric thin film reverse polarization of step thicknesses larger part keeps, corresponding second store status of this state;
(3) between first electrode and second electrode, apply a higher negative voltage-V2, make all forward polarization of ferroelectric thin film at two different step thicknesses places, corresponding the 3rd store status of this state;
(4) apply a lower forward voltage V1 between first electrode and second electrode, make the ferroelectric thin film of step thicknesses smaller part be inverted to reverse polarization, the ferroelectric thin film forward polarization of step thicknesses larger part keeps, corresponding the 4th store status of this state;
Voltage application method provided by the invention, the ferroelectric thin film of corresponding n kind different-thickness can realize 2
nIndividual store status (n 〉=2).
The structure of multiposition ferroelectric memory provided by the present invention and voltage application method thereof can improve storage density effectively, reduce production costs.
Description of drawings
Fig. 1 has the ferroelectric memory of 1T1C planar structure for prior art.
Fig. 2 A-2D is the preparation process diagrammatic cross-section according to embodiments of the invention 1 (ferroelectric storage cell with two steps).
Fig. 3 is the diagrammatic cross-section according to embodiments of the invention 2 (ferroelectric storage cell with n＞2 step).
Fig. 4 A～4D is the voltage application method synoptic diagram according to embodiments of the invention 1.
The ferroelectric materials electric hysteresis loop wire of Fig. 5 for adopting voltage application method provided by the present invention to obtain according to embodiments of the invention 1.
Fig. 6 is reference for this ferroelectric material domain reversal polarization size under with 9 volts voltages of the PZT material under a certain proportioning, the polarize graph of a relation of number percent and impressed voltage of this ferroelectric thin film domain reversal that obtains.
Number in the figure explanation: 100 silicon substrates, 102 first metal electrodes, 104 liang of rank ferroelectric thin films, the ferroelectric thin film at 104-1 first step place, the ferroelectric thin film at 104-2 second step place, 106 second metal electrodes, 200 silicon substrates, 202 first metal electrodes, 204n rank ferroelectric thin film, the ferroelectric thin film at 204-1 first step place, the ferroelectric thin film at 204-2 second step place, the ferroelectric thin film at place, 204-n n rank, 206 second metal electrodes.
Embodiment
Hereinafter more specifically describe the present invention in the reference example, the invention provides preferred embodiment, but should not be considered to only limit to embodiment set forth herein in conjunction with being shown in.In the drawings, for convenience of description, amplified the thickness in layer and zone, shown in size do not represent physical size.
Reference diagram is the synoptic diagram of idealized embodiment of the present invention, and embodiment shown in the present should not be considered to only limit to the given shape in zone shown in the figure, but comprises resulting shape, the deviation that causes such as manufacturing.For example the curve that obtains of etching has crooked or mellow and full characteristics usually, but in embodiments of the present invention, all represents with rectangle, and the expression among the figure is schematically, but this should not be considered to limit the scope of the invention.
Embodiment 1
With reference to figure 2, be depicted as the diagrammatic cross-section of ferroelectric storage cell with two steps.First metal electrode 102 is formed on the silicon substrate 100, and first metal electrode can be platinum, ruthenium, iridium, chromium billon and yttrium oxide.Pass through nano impression on first metal electrode 102, mechanical stamping or advanced photoetching and etching technique prepare the ferroelectric thin film 104 that one deck has two steps, thin first step partly is designated as 104-1, thicker second step partly is designated as 104-2, the thickness of two steps can carry out the optimization adjustment according to the thickness and the polarization intensity of ferroelectric thin film and the size that applies voltage, to obtain best store status.The step ferroelectric thin-flim materials can be lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium and polyvinylidene fluoride base ferroelectric material.On ferroelectric thin film 104, form second metal electrode 106 and can be platinum, ruthenium, iridium, chromium billon and yttrium oxide.
With reference to figure 3, be depicted as the diagrammatic cross-section of the ferroelectric storage cell of (n＞2) the individual step that has n.Unique difference of Fig. 3 and Fig. 2 is that the ferroelectric thin film number of steps among Fig. 3 will be higher than the ferroelectric thin film number of steps among Fig. 2.The thickness of each step can carry out the optimization adjustment according to the thickness of ferroelectric thin film and the relation of coercive voltage, to obtain best store status.
Embodiment 3
With reference to figure 2A～2D.
Fig. 2 A is that first metal electrode 102 is formed at silicon substrate 100 cross-sectional view afterwards.Selected Si substrate 100 is low-drag type (a 111) silicon chip, earlier with the ultrasonic surface organic matter that removes of acetone, use dense H2SO4: H2O2=1 again: 1 is heated to about 100 degree, and kept 5 to 10 minutes, dash to do with deionized water more afterwards and dry, retell silicon slice placed entry: HF=10: soaked about 20 minutes in 1 the solution, remove oxide on surface, dash to do with deionized water afterwards and dry, retell silicon chip and put into NH4OH: H2O2: H2O=1: the I solution of 2: 5 volume ratios boiled 5 minutes, dash with deionized water afterwards and do drying, again silicon chip is put into HCL: H2O2: H2O=1: the II liquid of 2: 8 volume ratios boiled 10 minutes, dashed to do with deionized water afterwards to dry; Deposit first metal electrode material 102 on cleaned silicon chip, as platinum, ruthenium, iridium, chromium billon and yttrium oxide.
Fig. 2 B is the cross-sectional view behind preparation one deck ferroelectric thin-flim materials 104 on first metal electrode 102, and ferroelectric thin-flim materials can be lead zirconate titanate, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium and polyvinylidene fluoride base ferroelectric material.This example uses sol-gel process to prepare ferroelectric lead zirconate titanate film.By certain stoichiometric proportion, be starting material with lead acetate, methyl alcohol, butyl titanate, propyl alcohol zirconium, acetate, be mixed and made into lead zirconate titanate colloidal sol elder generation body by the water-bath heating.With 3000r/min, on first metal electrode 102, use spin coater spin coating lead zirconate titanate colloidal sol elder generation body 30 seconds, then it heated 3 minutes on 175 degrees centigrade hot plate, heated 5 minutes on 350 degrees centigrade hot plate at last, thereby obtained one deck ferroelectric thin film.Use the same method, obtain in rapid thermal anneler, to anneal 15 minutes after the second layer ferroelectric thin film with 650 degrees centigrade.On second layer ferroelectric thin film, held glue elder generation body 30 seconds with spin coater with 3000r/min spin coating lead zirconate titanate, wait for 3 minutes, obtain the 3rd layer of ferroelectric thin film, spin coating is 6 times and so forth.On 50 degrees centigrade of hot plates, heated 5 minutes afterwards, thereby finally obtain ferroelectric thin film 104.
The cross-sectional view of Fig. 2 C after for the ferroelectric thin film that the ferroelectric thin film 104 for preparing is processed into thin 104-1 step and thicker two different-thickness of 104-2 step, job operation can be nano impression, mechanical stamping and advanced photoetching and etching technique.This example adopts nano-imprinting method to be processed to form the ferroelectric thin film 104 concave-convex surface patterns shown in Fig. 2 C.Be specially and adopt the silicon template of the certain live width and the optical grating construction in cycle to impress ferroelectric thin film 104, under certain pressure, keep 15 minutes after, take off the silicon template, just form the concave-convex surface pattern of the ferroelectric thin film 104 shown in Fig. 2 C.The ferroelectric thin film 104 that then will have concavo-convex pattern carries out heating anneal, promptly finishes the surface topography processing of ferroelectric thin film.
Fig. 2 D is the cross-sectional view after forming second metal electrode 106 on the step-like ferroelectric thin film.Second metal electrode material 102 comprises platinum, ruthenium, iridium, chromium billon and yttrium oxide.
Embodiment 4
With reference to figure 4A～4D.
Fig. 4 A～4D is the foundation voltage application method synoptic diagram with ferroelectric storage cell of 2 steps of the present invention.
Because ferroelectric material is originally in not having under the impressed voltage existence residual polarization is arranged, the ferroelectric thin film upper and lower surface will be adsorbed positive and negative charge according to principle of opposite sex attraction, externally then do not show potential difference (PD), in the time of when impose on ferroelectric material two surface electrodes with certain voltage on, the electricdomain of ferroelectric thin-flim materials inside will be reversed, the electric charge of surface adsorption will be ostracised and be flowed in peripheral circuit at this moment, thereby give the peripheral circuit current signal, the memory function that realization is read and write. without the finished ferroelectric material of the present invention, its electricdomain will be reversed rapidly under certain voltage, with the ferroelectric thin-flim materials PZT under a certain proportioning is example, certain thickness this ferroelectric thin film is measured down from the voltage of 1 volt of voltage to 9 volt, with this PZT ferroelectric material domain reversal polarization size under 9 volts of voltages is reference, can obtain the ferroelectric thin film electricdomain under 4V voltage, have only 11.47% reverse-poled number percent, and the reverse-poled number percent of ferroelectric thin film electricdomain reached for 87% (as shown in Figure 6) under the 5V voltage.Promptly when impressed voltage was lower than coercive voltage, the polarization reversal of minute quantity only took place in the ferroelectric thin film electricdomain; And when impressed voltage was higher than coercive voltage, the ferroelectric thin film electricdomain was with most of polarization reversal.And the ferroelectric thin film correspondence of different-thickness different coercive voltages, therefore can realize the multidigit memory function of ferroelectric memory by making up uneven step-like ferroelectric thin-flim materials with different-thickness.
With two stage rank ferroelectric thin films is example, and film both sides electrode voltage is added to necessarily, is made as V2, and whole ferroelectric thin film electricdomain is with reverse polarization, and this is defined as store status (00).Impressed voltage-V1, then the electricdomain than thin ferroelectric film will be inverted to the forward polarization, and the electricdomain of thicker ferroelectric thin film keeps reverse polarization, this defines store status (01).All forward polarization of impressed voltage-V2, the ferroelectric thin film at two different step thicknesses places, this moment, this defined store status (11).Impressed voltage V1, then the electricdomain than thin ferroelectric film will be inverted to reverse polarization, and the electricdomain of thicker ferroelectric thin film keeps the forward polarization, this defines store status (10).Owing under a voltage, finish without its polarization reversal of the finished ferroelectric thin-flim materials of the inventive method, be made as V, ferroelectric media material storage this moment have only two states (V and-V), the ferroelectric media film of constructing via the present invention will have by original binary states and become one of four states (V2 so,-V1,-V2, V1).So just can be used for defining four storage attitudes (00,01,11,10), thereby be implemented in following 4 storages in same unit.
Embodiment 5
Be example with the foundation embodiment of the invention (ferroelectric storage cell) below, gather the voltage application method of ferroelectric four store statuss of realization that concrete diagram illustrates with 2 steps.
Fig. 4 A is for to apply a higher forward voltage V2 between first metal electrode 102 and second metal electrode 106, first metal electrode, 102 ground connection, and second metal electrode 106 meets forward voltage V2.Under this forward voltage, all reverse polarizations of ferroelectric thin film at first step 104-1 and second step 104-2 place, corresponding first store status of this state;
Fig. 4 B hangs down negative voltage-V1 for apply one between first metal electrode 102 and second metal electrode 106, first metal electrode, 102 ground connection, and second metal electrode 106 meets negative voltage-V1.The ferroelectric thin film electricdomain at thin first step 104-1 place will be inverted to the forward polarization, and the ferroelectric thin film at thicker second step 104-2 place keeps reverse polarization, corresponding second store status of this state;
Fig. 4 C applies a higher negative voltage-V2 between first metal electrode 102 and second metal electrode 106, first metal electrode, 102 ground connection, and second metal electrode 106 meets negative voltage-V2.Under this negative voltage, the ferroelectric thin film at first step 104-1 and second step 104-2 place all is inverted to the forward polarization, corresponding the 3rd store status of this state;
Fig. 4 D is for to apply one than low forward voltage V1 between first metal electrode 102 and second metal electrode 106, first metal electrode, 102 ground connection, and second metal electrode 106 meets forward voltage V1.The ferroelectric thin film electricdomain at thin first step 104-1 place will be inverted to reverse polarization, and the ferroelectric thin film at thicker second step 104-2 place keeps the forward polarization, corresponding the 4th store status of this state;
Owing under a voltage, finish without its polarization reversal of the finished ferroelectric thin-flim materials of the inventive method, be made as V, ferroelectric media material storage this moment have only two states (V and-V), the ferroelectric media film of constructing via the present invention will have by original binary states and become one of four states (V2 so,-V1,-V2, V1).So just can be used for defining four storage attitudes (00,01,11,10), thereby be implemented in following 4 storages in same unit.
Figure 5 shows that the ferroelectric materials electric hysteresis loop wire that adopts voltage application method provided by the present invention to obtain according to embodiments of the invention.
Add external voltage V2, whole ferroelectric thin film electricdomain is reverse polarization, corresponding ferroelectric thin film surface charge state Q (00), i.e. first store status (00).Impressed voltage-V1, then the electricdomain than thin ferroelectric film will be inverted to the forward polarization, and the electricdomain of thicker ferroelectric thin film keeps reverse polarization, and corresponding ferroelectric thin film surface charge state Q (01), this defines store status (01).All forward polarization of impressed voltage-V2, the ferroelectric thin film at two different step thicknesses places, corresponding ferroelectric thin film surface charge state Q (11), this defines store status (11).Impressed voltage V1, then the electricdomain than thin ferroelectric film will be inverted to reverse polarization, and the electricdomain of thicker ferroelectric thin film keeps the forward polarization, and corresponding ferroelectric thin film surface charge state Q (10), this defines store status (10).Thereby four storage attitudes (00,01,11,10) that obtain defining.
Embodiment 7
Fig. 6 is reference for PZT material traditional under a certain proportioning this ferroelectric material domain reversal polarization size under with 9 volts voltages, the polarize graph of a relation of number percent and impressed voltage of the ferroelectric thin film domain reversal that obtains.The result shows that the ferroelectric thin film electricdomain have only 11.47% reverse-poled number percent, and the reverse-poled number percent of ferroelectric thin film electricdomain has reached 87% under the 5V voltage under 4V voltage.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the instructions.
Claims (8)
1. multiposition ferroelectric memory, contain silicon substrate, it is characterized in that, the first metal electrode membraneous material, step-like ferroelectric thin-flim materials and the second metal electrode membraneous material are arranged on the described silicon substrate, by making up uneven step-like ferroelectric thin-flim materials with multiple different-thickness, be implemented in the multidigit memory function of storage long numeric data in the single ferroelectric storage cell, it comprises:
(1) the deposit first metal electrode membraneous material on silicon substrate;
(2) the uneven step-like ferroelectric thin-flim materials of preparation one deck on first metal electrode with different-thickness;
(3) the deposit second metal electrode membraneous material on ferroelectric thin film.
2. multiposition ferroelectric memory according to claim 1 is characterized in that: described on first metal electrode uneven method of preparation with step-like ferroelectric thin film of different-thickness be selected from nano impression, mechanical stamping or advanced photoetching and etching technique.
3. multiposition ferroelectric memory according to claim 1 and 2 is characterized in that: described uneven step-like ferroelectric thin film has n 〉=2 kind of different-thickness.
4. multiposition ferroelectric memory according to claim 1 and 2 is characterized in that: described ferroelectric thin-flim materials selected among zirconium lead titanates, strontium bismuth titanate, bismuth lanthanum titanate, barium strontium or polyvinylidene fluoride base ferroelectric material.
5. multiposition ferroelectric memory according to claim 1 and 2 is characterized in that, described first metal electrode is a platinum, ruthenium, iridium, chromium billon or yttrium oxide.
6. multiposition ferroelectric memory according to claim 1 and 2 is characterized in that, described second metal electrode is a platinum, ruthenium, iridium, chromium billon or yttrium oxide.
7. a realization ferroelectric memory multidigit stored voltage applying method is characterized in that, the external voltages of the different sizes of the corresponding successively n kind of the ferroelectric thin film of n kind different-thickness, and n 〉=2 wherein,
It comprises the steps:
(1) between first electrode and second electrode, applies a higher forward voltage V2, make all reverse polarizations of ferroelectric thin film at two different step thicknesses places, corresponding first store status of this state;
(2) apply low reverse voltage-V1 between first electrode and second electrode, make the ferroelectric thin film of step thicknesses smaller part be inverted to the forward polarization, the ferroelectric thin film reverse polarization of step thicknesses larger part keeps, corresponding second store status of this state;
(3) between first electrode and second electrode, apply a higher negative voltage-V2, make all forward polarization of ferroelectric thin film at two different step thicknesses places, corresponding the 3rd store status of this state;
(4) between first electrode and second electrode, apply a lower forward voltage V1,, make the ferroelectric thin film of step thicknesses smaller part be inverted to reverse polarization, the ferroelectric thin film forward polarization of step thicknesses larger part keeps, corresponding the 4th store status of this state.
8. voltage application method according to claim 6 is characterized in that, the ferroelectric thin film of described n kind different-thickness realizes 2
nIndividual store status.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910221812 CN101882463B (en) | 2009-05-08 | 2009-11-11 | Multiposition ferroelectric memory and voltage application method thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910050876 | 2009-05-08 | ||
| CN200910050876.6 | 2009-05-08 | ||
| CN 200910221812 CN101882463B (en) | 2009-05-08 | 2009-11-11 | Multiposition ferroelectric memory and voltage application method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101882463A true CN101882463A (en) | 2010-11-10 |
| CN101882463B CN101882463B (en) | 2013-02-27 |
Family
ID=43054449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910221812 Expired - Fee Related CN101882463B (en) | 2009-05-08 | 2009-11-11 | Multiposition ferroelectric memory and voltage application method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101882463B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413787A (en) * | 2013-08-29 | 2013-11-27 | 厦门大学 | Method for preparing step-shaped oxide layer Au/SiO2/Si nanometer rod memory device |
| CN105793929A (en) * | 2013-10-31 | 2016-07-20 | 美光科技公司 | Multi-bit ferroelectric memory device and methods of forming the same |
| CN115881702A (en) * | 2023-02-28 | 2023-03-31 | 北京大学 | Method for regulating ferroelectricity of hafnium oxide-based ferroelectric material by utilizing alloy electrode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812105A (en) * | 2005-01-24 | 2006-08-02 | 鸿富锦精密工业（深圳）有限公司 | Ferroelectric memory device and manufacturing method thereof |
| KR100695139B1 (en) * | 2005-02-07 | 2007-03-14 | 삼성전자주식회사 | Ferroelectric recording medium, and writing method of the same |
-
2009
- 2009-11-11 CN CN 200910221812 patent/CN101882463B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413787A (en) * | 2013-08-29 | 2013-11-27 | 厦门大学 | Method for preparing step-shaped oxide layer Au/SiO2/Si nanometer rod memory device |
| CN103413787B (en) * | 2013-08-29 | 2015-01-28 | 厦门大学 | Method for preparing step-shaped oxide layer Au/SiO2/Si nanometer rod memory device |
| CN105793929A (en) * | 2013-10-31 | 2016-07-20 | 美光科技公司 | Multi-bit ferroelectric memory device and methods of forming the same |
| US9564576B2 (en) | 2013-10-31 | 2017-02-07 | Micron Technology, Inc. | Multi-bit ferroelectric memory device and methods of forming the same |
| US9847123B2 (en) | 2013-10-31 | 2017-12-19 | Micron Technology, Inc. | Multi-bit ferroelectric memory device and methods of forming the same |
| CN115881702A (en) * | 2023-02-28 | 2023-03-31 | 北京大学 | Method for regulating ferroelectricity of hafnium oxide-based ferroelectric material by utilizing alloy electrode |
| CN115881702B (en) * | 2023-02-28 | 2023-06-02 | 北京大学 | Method for regulating ferroelectricity of hafnium oxide-based ferroelectric material by using alloy electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101882463B (en) | 2013-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100135061A1 (en) | Non-Volatile Memory Cell with Ferroelectric Layer Configurations | |
| JP3162718B2 (en) | Integrated circuit memory | |
| CN100388497C (en) | Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor memory device | |
| US5889696A (en) | Thin-film capacitor device and RAM device using ferroelectric film | |
| CN106992250B (en) | Ferroelectric heterojunction-based nonvolatile resistive random access memory unit with multi-value storage characteristics and preparation method thereof | |
| CN107230676B (en) | Non-volatile ferroelectric memory with high read current and method of operating the same | |
| CN108417574A (en) | The manufacturing method of ferroelectric memory based on SOI | |
| Eshita et al. | Ferroelectric random access memory (FRAM) devices | |
| CN101882463B (en) | Multiposition ferroelectric memory and voltage application method thereof | |
| CN104637949A (en) | Non-destructive readout ferroelectric memory and manufacturing method and operation method thereof | |
| Lous | Ferroelectric memory devices | |
| CN110534505A (en) | A kind of three-dimensional ferroelectric capacitor device, preparation method and ferroelectric memory | |
| CN108389962A (en) | The method of the Ferro-RRAM and its enhancing read/write signal read and write in face | |
| CN109509753B (en) | High-density nondestructive reading ferroelectric domain wall memory | |
| WO2012033106A1 (en) | Memory cell block, manufacturing method therefor, memory device, and method for driving a memory device | |
| US6660536B2 (en) | Method of making ferroelectric material utilizing anneal in an electrical field | |
| CN113113536A (en) | Transparent multi-value nonvolatile resistance change memory unit and preparation method thereof | |
| JP5415613B2 (en) | Field effect transistor and memory device | |
| JP2001313378A (en) | Ferroelectric thin-film capacitor having multilayered crystalline aggregate system, and its manufacturing method | |
| US7056750B2 (en) | Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory | |
| Inoue et al. | Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM) | |
| Inoue et al. | Compositional design of Pb (Zr, Ti) O/sub 3/for highly reliable ferroelectric memories | |
| Sun et al. | Roadmap for ferroelectric domain wall memory | |
| JP2003100993A (en) | Semiconductor memory cell | |
| KR101003452B1 (en) | Multi-bit ferroelectric memory device and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130227 Termination date: 20151111 |
|
| EXPY | Termination of patent right or utility model |