CN101880870B - 一种NiTiO3薄膜的制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims abstract description 8
- AOPCKOPZYFFEDA-UHFFFAOYSA-N nickel(2+);dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O AOPCKOPZYFFEDA-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims description 21
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 125000002091 cationic group Chemical group 0.000 claims 1
- TZMFJUDUGYTVRY-UHFFFAOYSA-N pentane-2,3-dione Chemical compound CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 abstract description 14
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000001035 drying Methods 0.000 abstract description 8
- 239000002738 chelating agent Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- OVARTBFNCCXQKS-UHFFFAOYSA-N propan-2-one;hydrate Chemical compound O.CC(C)=O OVARTBFNCCXQKS-UHFFFAOYSA-N 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 239000011259 mixed solution Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 6
- 229960000935 dehydrated alcohol Drugs 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical group O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
一种NiTiO3薄膜的制备方法,将六水硝酸镍加入乙醇得溶液记为A;向A溶液中加入钛酸四丁酯、草酸、水和乙酰丙酮得溶液记为B,将经过活化处理的硅基板放入B溶液中;将B溶液放入紫外光一微波仪中照射一定时间后取出硅基片,将硅基片用丙酮清洗后放入干燥箱中干燥,即得到了不含杂质的NiTiO3薄膜。本发明利用草酸为螯合剂在较低温度下制备出了不含杂质的NiTiO3薄膜。制得的NiTiO3薄膜晶粒尺寸较小,并且不含任何杂质,制备NiTiO3薄膜反应周期短,重复性好,制备简单,操作方便,原料易得,制备成本较低。
Description
技术领域
本发明涉及一种NiTiO3薄膜的制备方法,具体涉及一种NiTiO3薄膜的紫外光-微波相结合的制备方法。
背景技术
含有不同金属的钛系氧化物MTiO3(M=Ni,Pb,Fe,Co,Cu和Zn)是广泛应用于固体氧化物燃料电池电极(SOFC)、金属一空气隔绝材料、气敏传感器的无机功能材料。NiTiO3属于钛铁矿结构的三角晶系。这种钙铁矿结构是由大量的共价键紧密结合的立方结构,其中心有一个半径很小的原子可以在不断键的条件下在晶格内自由移动。NiTiO3具有高Q值(衡量电感器件的主要参数,Q值越高,其损耗越小,效率越高)、低介电常数和良好的声一光和电一光性质。由于它的半导电性和弱磁性,使得NiTiO3广泛应用于半导体整流器、碳酸氢盐催化剂和表面包覆的染色混合剂。另外,NiTiO3还可以在没有液体润滑剂的条件下用作高温降低摩擦和损耗的包覆材料。
目前关于制备NiTiO3薄膜的报道不是很多,NiTiO3薄膜的制备依旧是材料界较为新颖的课题。D.J.Taylor等(D.J.Taylor,P.F.Fleig,R.A.Page.2002,(408):104-110)采用溶胶凝胶法制备出了NiTiO3薄膜,但是制备出的薄膜需要1400℃的高温后处理后仍含有少量杂质,并且随着后处理温度的降低杂质含量越高。迄今为止,还未见在较低温度下制备不含杂质的NiTiO3薄膜的报道。
发明内容
本发明的目的在于克服上述现有技术的缺点,提供了一种不仅制备成本低,而且操作简单、反应周期短的高纯NiTiO3薄膜的制备方法。
为达到上述目的,本发明采用的技术方案是:
步骤一:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.3mol/L~0.6mol/L的透明溶液记为A;
步骤二:其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为(0.5~2)∶1,最后再加入无水乙醇体积4~8倍的水和9~17倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;
步骤三:最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射12h~72h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在80℃~120℃下干燥8h~12h,即得到最终产物-不含杂质的NiTiO3薄膜。
由于本发明利用草酸为螯合剂在较低温度下制备出了不含杂质的NiTiO3薄膜。制得的NiTiO3薄膜晶粒尺寸较小,薄膜表面平整,并且不含任何杂质。且反应周期短,重复性好,制备简单,操作方便,原料易得,制备成本较低。
附图说明
图1为本发明制备的NiTiO3薄膜的X-射线衍射(XRD)图谱;
图2为本发明制备的NiTiO3薄膜的场发射扫描电镜(FESEM)照片。
具体实施方式
下面结合附图对本发明作进一步详细说明。
实施例1:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.3mol/L的透明溶液记为A;其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为0.5∶1,最后再加入无水乙醇体积4倍的水和9倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射12h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在80℃下干燥12h,即得到最终产物-不含杂质的NiTiO3薄膜。
将所得的NiTiO3薄膜用日本理学D/max2000PC X-射线衍射仪分析样品,发现产物为JCPDS编号为33-0960的NiTiO3(图1)。将该样品用日本JEOL公司生产的JSM-6700F型场发射扫描电子显微镜(图2)进行观察,从照片可以看出所制备的NiTiO3薄膜表面较平整。
实施例2:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.4mol/L的透明溶液记为A;其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为0.7∶1,最后再加入无水乙醇体积7倍的水和15倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射24h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在90℃下干燥11h,即得到最终产物-不含杂质的NiTiO3薄膜。
实施例3:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.4mol/L的透明溶液记为A;其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为1.5∶1,最后再加入无水乙醇体积5倍的水和10倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射72h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在110℃下干燥9h,即得到最终产物-不含杂质的NiTiO3薄膜。
实施例4:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.6mol/L的透明溶液记为A;其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为2∶1,最后再加入无水乙醇体积8倍的水和17倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射60h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在120℃下干燥8h,即得到最终产物-不含杂质的NiTiO3薄膜。
实施例5:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.5mol/L的透明溶液记为A;其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为1∶1,最后再加入无水乙醇体积6倍的水和13倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射36h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在100℃下干燥10h,即得到最终产物-不含杂质的NiTiO3薄膜。
Claims (1)
1.一种NiTiO3薄膜的制备方法,其特征在于:
步骤一:首先,将分析纯的六水合硝酸镍加入无水乙醇中,并不断搅拌,配制成Ni2+浓度为0.3mol/L~0.6mol/L的透明溶液记为A;
步骤二:其次,向A溶液中加入分析纯的钛酸四丁酯,使得Ni2+与Ti4+的摩尔比为1∶1,并不断搅拌得混合溶液,然后再向混合溶液中加入草酸,使草酸与所有阳离子的摩尔比为(0.5~2)∶1,最后再加入无水乙醇体积4~8倍的水和9~17倍的乙酰丙酮,搅拌均匀后静置形成溶液记为B;
步骤三:最后,将经双氧水和硝酸活化处理后的硅基片放入上述溶液B中;将B溶液放在紫外光-微波仪中照射12h~72h后取出硅基片,再将硅基片用丙酮清洗后放入干燥箱中,在80℃~120℃下干燥8h~12h,即得到最终产物-不含杂质的NiTiO3薄膜。
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