CN101877538A - Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle - Google Patents
Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle Download PDFInfo
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- CN101877538A CN101877538A CN 201010167816 CN201010167816A CN101877538A CN 101877538 A CN101877538 A CN 101877538A CN 201010167816 CN201010167816 CN 201010167816 CN 201010167816 A CN201010167816 A CN 201010167816A CN 101877538 A CN101877538 A CN 101877538A
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- bipolar transistor
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Abstract
The invention discloses a two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for an electric vehicle, belonging to the products of vehicle electronic elements and mainly solving the technical problem of drive control of the electric vehicle. The technical scheme is as follows: a DC/DC conversion circuit 1 is connected with two IGBT drive circuits 3 and 4, a level matching circuit 2 is connected with the DC/DC conversion circuit and the two IGBT drive circuits 3 and 4, and each leading-out circuit line is connected into a pin header. The product of the invention can be used for power drive control of the electric vehicle.
Description
Technical field:
The present invention discloses a kind of intelligent driver module, a kind of specifically two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle.
Background technology:
Development along with the development, particularly power battery technology of power electronic technology and high-power IGBT module makes the research and development of electric automobile and industrialization become possibility.Because the exhaustion of petroleum resources and being on the rise of Global Greenhouse Effect, low-carbon economy have become inevitable.Electric automobile substitutes traditional fuel-engined vehicle has become trend.
The main distinction of electric automobile and traditional fuel-engined vehicle is the power drive part.The power drive of electric automobile mainly contains electrokinetic cell, motor drive controller, motor formation.High-power binary channels IGBT intelligent driver module is one of core component of motor drive controller.Because domestic relevant research and development and industry are relatively backward, this product is all monopolized by external minority enterprise at present.Vehicle operation condition is special, reliability requirement is very high, ambient temperature and anti-vibration etc. are required all very harsh, the two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle that satisfies above-mentioned requirements is subjected to external producing country government to sell embargo, can't buy at home, seriously restrict the reliability and the production domesticization of China's electric powered motor driving governor.
Through preliminary literature search, do not see the open report identical with the present invention.Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle is used to drive electric automobile high-power IGBT module and turns on and off reliably.Extensively apply to higher big-power transducer of the motor-driven of various electric automobiles and various requirement etc.
Summary of the invention:
The objective of the invention is to overcome the deficiency of prior art, a kind of perfect in shape and function is provided, satisfy the binary channels high-power IGBT intelligent object that electric automobile uses.
Realize that circuit working principle of the present invention and structure are: two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle is connected with two IGBT drive circuits 3 and 4 by DC/DC translation circuit 1, level matching circuit 2 is connecting DC/DC translation circuit 1 and two IGBT drive circuits 3 and 4, respectively draws circuitry lines and inserts row's pin.
Wherein, DC/DC translation circuit 1 is by two integrated package U
1, U
2, a resistance R
1, 15 capacitor C
1, C
2, C
3, C
4, C
5, C
6, C
7, C
8, C
9, C
10, C
11, C
12, C
13, C
14, C
15, 11 diode V
1, V
2, V
3, V
4, V
5, V
6, V
7, V
8, V
9, V
10, V
11, three transformer T
1,T
2,T
3,, and eight earth points are coupled to each other formation.
Level matching circuit 2 is by six resistance R
2, R
3, R
4, R
5, R
6, R
7, two triode V
12, V
13, two triode V
14, V
15, and an earth point is coupled to each other formation.
IGBT drive circuit 3 is by an integrated package U
3, four resistance R
8, R
9, R
10, R
11, five capacitor C
16, C
17, C
18, C
19, C
20, six triode V
16, V
17, V
18, V
19,V
21, V
22, two diode V
20, V
23, and four grounded point is coupled to each other formation.Two groups of identical circuit are arranged.
Finally, DC/DC translation circuit 1, level matching circuit 2, IGBT drive circuit 3 and 4 its connecting joints have VCC2A, VE2A, VEE2A; PWMA, VCC1, PWMB, PWM1, PWM2; SO1, DESATA, OUTA, and with row pin link.
The DC/DC translation circuit is used to binary channels IGBT drive circuit that insulating power supply is provided; Binary channels IGBT drive circuit is used for the gate driving of IGBT module, and detects the operating state of IGBT in good time, has under-voltage protection and IGBT overcurrent protection function.
The invention has the beneficial effects as follows: the DC/DC translation circuit has adopted the dc bus mode, and circuit structure is a half-bridge structure, and it is simple to have a circuit structure, the conversion efficiency advantages of higher.Binary channels IGBT drive circuit is a core with IGBT special intelligent chip for driving, possesses functions such as isolation drive and the overcurrent protection of IGBT module, under-voltage protection; The power drive of binary channels IGBT drive circuit is made of the good high-frequency high-power triode of many switching characteristics.In order to improve this product reliability, the device of selecting for use has all been taked Redundancy Design.
The product reliability height, the against shock performance is good; Operating temperature range is wide, can reach-40 ℃ to+125 ℃; Adopt the dc bus mode, circuit structure is simple, and volume is little, the conversion efficiency height; Adopt the automotive grade special I GBT isolation drive chip of perfect in shape and function, the reliability height;
Description of drawings:
Fig. 1 is circuit principle structure meaning figure of the present invention;
Fig. 2 is a utilization example Parameter Map of the present invention.
Embodiment:
Below in conjunction with accompanying drawing of the present invention, further describe embodiment.
Embodiment: 2 * 6W two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle.
Connected with two IGBT drive circuits 3 and 4 by DC/DC translation circuit 1, level matching circuit 2 is connecting DC/DC translation circuit 1 and two IGBT drive circuits 3 and 4, respectively draws circuitry lines and inserts row's pin.Specified input voltage: direct current 15V; Rated output power: 2 * 6W, maximum output current: 32A, serviceability temperature is-40 ℃ to+125 ℃.
The circuit theory of module, parameter are as shown in Figure 2.U among the figure
1Select IR2085S for use, U
2Select LM78L05 for use, U
3, U
4Select IGBT intelligent driver DRIC for use, V
3, V
4Select IRF7811 for use, V
5, V
6, V
8, V
10, V
20, V
23, V
28, V
31Select SK3B for use, V
18, V
19, V
26, V
27Select MJD44HH11 for use, V
21, V
22, V
29, V
30Select MJD45HH11 for use, T
1Select the EFD15 high frequency transformer for use, T
2And T
3Select the EPC10 high frequency transformer for use.Other device is with reference to Fig. 2.
Use shows: driving power of the present invention is big, the wide height of operating temperature range, and anti-shake performance is good, and defencive function is perfect.
Claims (5)
1. two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle is by translation circuit, drive circuit, level matching circuit and row's pin constitute, it is characterized in that: DC/DC translation circuit (1) connects with two IGBT drive circuits (3) and (4), level matching circuit (2) is connecting DC/DC translation circuit (1) and two IGBT drive circuits (3) and (4), respectively draws circuitry lines and inserts row's pin.
2. two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle according to claim 1 is characterized in that: DC/DC translation circuit (1) is by two integrated package U
1, U
2, a resistance R
1, 15 capacitor C
1, C
2, C
3, C
4, C
5, C
6, C
7, C
8, C
9, C
10, C
11, C
12, C
13, C
14, C
15, 11 diode V
1, V
2, V
3, V
4, V
5, V
6, V
7, V
8, V
9, V
10, V
11, three transformer T
1,T
2,T
3,, and eight earth points are coupled to each other formation.
3. two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle according to claim 1 is characterized in that: level matching circuit (2) is by six resistance R
2, R
3, R
4, R
5, R
6, R
7, two triode V
12, V
13, two triode V
14, V
15, and an earth point is coupled to each other formation.
4. two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle according to claim 1 is characterized in that: IGBT drive circuit (3) is by an integrated package U
3, four resistance R
8, R
9, R
10, R
11, five capacitor C
16, C
17, C
18, C
19, C
20, six triode V
16, V
17, V
18, V
19, V
21, V
22, two diode V
20, V
23, and four grounded point is coupled to each other formation.
5. according to claim 1 and 2 and 3 and 4 described two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle, it is characterized in that: DC/DC translation circuit (1), level matching circuit (2), IGBT drive circuit (3) and (4) its connecting joint have VCC2A, VE2A, VEE2A; PWMA, VCC1, PWMB, PWM1, PWM2; SO1, DESATA, OUTA, and with row pin link.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010167816 CN101877538A (en) | 2010-05-11 | 2010-05-11 | Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010167816 CN101877538A (en) | 2010-05-11 | 2010-05-11 | Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle |
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| Publication Number | Publication Date |
|---|---|
| CN101877538A true CN101877538A (en) | 2010-11-03 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010167816 Pending CN101877538A (en) | 2010-05-11 | 2010-05-11 | Two-channel high-power IGBT (Insulated-Gate Bipolar Transistor) intelligent drive module for electric vehicle |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111835326A (en) * | 2020-07-29 | 2020-10-27 | 成都通用整流电器研究所 | Module safety control protection and indicating circuit based on IGBT drive |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008086068A (en) * | 2006-09-26 | 2008-04-10 | Nissan Motor Co Ltd | Gate drive circuit of voltage-driven element |
| JP2008236907A (en) * | 2007-03-20 | 2008-10-02 | Toshiba Mitsubishi-Electric Industrial System Corp | Gate control circuit and method of power conversion apparatus |
| CN201204544Y (en) * | 2008-04-29 | 2009-03-04 | 昆明佩斯迈克科技有限公司 | High-power IGBT intelligent drive module |
| CN101697454A (en) * | 2009-10-30 | 2010-04-21 | 北京航星力源科技有限公司 | Grid drive circuit of insulated grid device |
| CN201682473U (en) * | 2010-05-11 | 2010-12-22 | 云南领跑科技有限公司 | High-power IGBT intelligent drive module for electric automobile |
-
2010
- 2010-05-11 CN CN 201010167816 patent/CN101877538A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008086068A (en) * | 2006-09-26 | 2008-04-10 | Nissan Motor Co Ltd | Gate drive circuit of voltage-driven element |
| JP2008236907A (en) * | 2007-03-20 | 2008-10-02 | Toshiba Mitsubishi-Electric Industrial System Corp | Gate control circuit and method of power conversion apparatus |
| CN201204544Y (en) * | 2008-04-29 | 2009-03-04 | 昆明佩斯迈克科技有限公司 | High-power IGBT intelligent drive module |
| CN101697454A (en) * | 2009-10-30 | 2010-04-21 | 北京航星力源科技有限公司 | Grid drive circuit of insulated grid device |
| CN201682473U (en) * | 2010-05-11 | 2010-12-22 | 云南领跑科技有限公司 | High-power IGBT intelligent drive module for electric automobile |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111835326A (en) * | 2020-07-29 | 2020-10-27 | 成都通用整流电器研究所 | Module safety control protection and indicating circuit based on IGBT drive |
| CN111835326B (en) * | 2020-07-29 | 2023-08-18 | 成都通用整流电器研究所 | Module safety control protection and indication circuit based on IGBT drive |
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Application publication date: 20101103 |