CN101876691A - System and method for testing magnetoelectricity property of multiferroic thin-film material - Google Patents
System and method for testing magnetoelectricity property of multiferroic thin-film material Download PDFInfo
- Publication number
- CN101876691A CN101876691A CN2009102378860A CN200910237886A CN101876691A CN 101876691 A CN101876691 A CN 101876691A CN 2009102378860 A CN2009102378860 A CN 2009102378860A CN 200910237886 A CN200910237886 A CN 200910237886A CN 101876691 A CN101876691 A CN 101876691A
- Authority
- CN
- China
- Prior art keywords
- measured
- film sample
- magnetic field
- sample
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a system and a method for testing magnetoelectricity property of a multiferroic thin-film material, belonging to the field of property tests of materials. The system is characterized by comprising a DC bias magnetic field generating device, an AC magnetic field generating device, a thin-film sample probe holding device and a micro signal acquiring and amplifying device. The invention also provides a method for testing magnetoelectricity property of the multiferroic thin-film material. The invention can recognize the difference of an electromagnetic inductive interference signal and a multiferroic magnetoelectricity responding signal by accurately testing a thin-film micro electric responding signal so as to obtain a real amplitude of a magnetoelectricity coefficient of the multiferroic thin-film material under different frequencies and bias magnetic fields and also obtain the change law of thin-film sample polarization with an alternating magnetic field.
Description
Technical field
The present invention relates to a kind of instrument and method of testing of measuring the magnetic electricity performance of multiferroic film material, belong to the performance test field of material.
Background technology
The multiferroic film material possesses multiferroics such as ferroelectric, ferromagnetic simultaneously, has magnetic and electric coupling response, is a kind of and the material system with wide application prospect microelectronic technique compatibility.In the multiferroic film material, magnetoelectric effect is one of its topmost physical influence, magnetic electricity performance can be weighed and represents by magnetoelectricity voltage coefficient or mangneto electric polarization, and its Changing Pattern with frequency, magnetic field then is important analysis means of understanding magneto-electric coupled mechanism of multi-ferroic material and efficient.The multiferroic film material is divided into single-phase multiferroic film material and many iron property magnetoelectricity laminated film two big classes substantially, wherein the former can cause the coupling of material magnetic domain and electricdomain under bigger action of alternating magnetic field, produce electric polarization, and the latter is because stress induced machining function, under certain bias magnetic field, just can produce the electric field of different sizes by certain perturbation alternating magnetic field, because its mechanism of action difference uses different means of testing to carry out analysis and characterization with regard to needing.And the capable membraneous material of many iron all has a wide range of applications in sensing, driving, storage and intelligence system, is subjected to researchist's extensive concern.
The present nobody of magnetic electricity performance tester who is directed to membraneous material carried out report and open, and for the analytical test aspect of magnetoelectricity block materials, (Bracks.L.P.M.andvan Vliet.R.G.A broadband magneto-electric transducer using acomposite material.International Journal of Electronics.1981 discloses a kind of magnetic-electric coefficient proving installation in 51:225) to people such as Bracks in 1981 at paper.This device applies the direct current biasing magnetic field H with permanent magnet
DCDrive helmholtz coil with signal generator and produce sinusoidal perturbation magnetic field H
AcBe connected with magnetoelectric material with impedance transformer, measure the voltage of magnetoelectric material.2004, people such as the Dong of the U.S. are at his paper (Dong S.X., Li J.F.and Viehland D.Characterization of magnetoelectric laminatecomposites operated in longitudinal-transverse andtransverse-transverse modes.Journal of Applied Physics.2004 discloses his proving installation in 95:2625).Wherein, adopt the direct supply drive magnetic to produce direct current biasing magnetic field; Adopt sinusoidal voltage of lock-in amplifier output, amplify through AC power amplifier, drive helmholtz coil and produce sinusoidal perturbation magnetic field, lock-in amplifier also is used to measure the output voltage of magnetoelectric material simultaneously.The magnetic-electric coefficient of this device under can vertical with magnetic field or the parallel two kinds of angles of specimen.2006, people such as Tsing-Hua University puts to good use, Nan Cewen apply for a patent the proving installation that discloses the magnetoelectricity block materials, and wherein emphasis has solved that magnetic-electric coefficient phase test problem, material output voltage are gone between and problem, the test angle continually varying problem of the capacitive effect of tester and the problem of being carried out automatic measurement by software control.
The deficiency that present measuring technology exists has: present test macro because the response signal value of membraneous material is far smaller than block materials (three orders of magnitude extremely when young), can't accurately be measured response signal all towards block materials; Because a little less than the membraneous material signal, electromagnetic induction interference is strong, can't get rid of the influence of electromagnetic interference (EMI) to test; Because membraneous material film upper surface electrode is little and thin, general lead-in wire test technology can produce damaging influence to sample at present, can't carry out lossless detection to sample; Because the magneto-electric coupled mechanism of dissimilar multiferroic film materials is different, can't select method of testing to test targetedly.
Summary of the invention
The magnetic electricity performance test macro and the corresponding test method that the purpose of this invention is to provide a kind of multiferroic film material, this test macro is the magneto-electric response signal of MEASUREMENTS OF THIN material accurately, get rid of the interference electromotive force that electromagnetic induction produces, simultaneously can also carry out lossless detection, need not to go between sample; Four kinds of magnetic electricity performance method of testings based on this tester are provided on the other hand, can have tested at dissimilar multiferroic film materials respectively.
The present invention compared with prior art has the following advantages and the high-lighting effect:
Present invention is directed to the magnetic electricity performance test macro of multiferroic film material, can carry out accurate small electric response signal surveys, can get rid of the influence that interference electromotive force that electromagnetic induction causes causes test, can carry out the repetition lossless detection, provide simultaneously to have comprised D.C. magnetic field H sample
DC, AC magnetic field H
Ac, three kinds of frequency f test changing factor respectively at four kinds of magnetic electricity performance measuring methods of dissimilar multiferroic film materials.The present invention contains the sample probe clamping device makes sample survey the electroresponse signal with the probe method of clamping, need not lead-in wire; The present invention contains bipolar power supply, can drive helmholtz coil provide near or surpass the alternating magnetic field of ferromagnetic thin film material saturation magnetic fields such as single-phase multiferroic film material such as ferrous acid bismuth or nickel ferrite based magnetic loaded, for the magneto-electric coupled performance testing of these materials provides possibility; The step method that the present invention contains the device of finely tuning sample angle and provides undesired signal to get rid of criterion has been eliminated because the influence of the induced electromotive force that lead-in wire and probe current loop area bring.
Description of drawings
The circuit side connector block diagram of Fig. 1 test macro.
Fig. 2 film sample probe to be measured clamping device synoptic diagram.
Assembling of Fig. 3 spring probe and rotation synoptic diagram.
Fig. 4 example one 120 nano lead zirconate titanates and 80 nano-ferrous acid laminated film samples are at test frequency f=1000Hz, alternating magnetic field H
AcMagnetic-electric coefficient is with direct current biasing changes of magnetic field graph of a relation under the condition of=134Oe.
Fig. 5 example 2 96 nano barium phthalates and 24 nano nickel ferrite laminated film samples are at alternating magnetic field H
AcMagnetic-electric coefficient is with alternating magnetic field frequency f variation relation figure under=86Oe, the no direct current biasing magnetic field.
The single-phase film sample of Fig. 6 example 3 300 nanometer ferrous acid bismuths is at no bias magnetic field, the test frequency f=1000Hz bottom electrode P variation relation figure with the alternating electric field amplitude.
The single-phase film sample of Fig. 7 example 4 300 nanometer ferrous acid bismuths is at different bias magnetic fields, the test frequency f=1000Hz bottom electrode P variation relation figure with the alternating electric field amplitude.
Among the figure: 1-electromagnet, 2-direct supply, 3-gaussmeter, 4-helmholtz coil, the 5-function signal generator, 6-bipolar power supply, 7-oscillograph, 8-lock-in amplifier, the 9-computing machine, 10-sample stage, 11-spring probe, 12-probe support, the 13-support spring, 14 gib screws, 15-packing ring, 16 specimen holders, the 17-lead-in wire, 18-testing sample, 19-testing sample substrate electrod, 20-testing sample film upper surface electrode, 21-sample stage layer electrodes, 22-specimen holder rotary turnplate.
Embodiment
A kind of multiferroic film material magnetic electricity performance test macro is characterized in that, contains: computing machine, direct current biasing field generator for magnetic, AC magnetic field generating means, tiny signal are gathered multiplying arrangement and film sample probe clamping device, wherein:
The direct current biasing field generator for magnetic contains: electromagnet, direct supply and gaussmeter, wherein:
Gaussmeter, input end links to each other with the measuring control signal output terminal of described computing machine, and the signal output part of this gaussmeter links to each other with the measuring-signal input end of described computing machine;
Direct supply, with described computer interconnection, the control signal of computing machine under receiving, to this computing machine output dc voltage signal, simultaneously, described direct supply is powered to described magnet spool;
The AC magnetic field generating means contains: helmholtz coil, function signal generator and bipolar power supply, wherein:
Bipolar power supply is powered to described helmholtz coil, and making this helmholtz coil produce frequency is square wave or the sine-wave excitation magnetic field H ac of f;
Helmholtz coil is connected in the described electromagnet in coaxially, is inserted with the probe of described gaussmeter in this helmholtz coil, in order to measure the size of alternating magnetic field Hac;
Function signal generator, regulation and control are to the waveform and the frequency of the alternating voltage of described bipolar power supply under the control of described computing machine;
The film sample clamping device is inserted horizontally in the described helmholtz coil along the direction that adds alternating magnetic field, and this film sample clamping device is made of jointly film sample Spin Control part to be measured and film sample retained part to be measured, wherein:
Film sample Spin Control part to be measured comprises: specimen holder and with the coaxial film sample rotary turnplate to be measured of fixedlying connected of this specimen holder, the corner of described film sample rotary turnplate to be measured is finely tuned between+5 °～5 °;
Film sample retained part to be measured, contain sample stage, two pieces of spring probe, gib screw, packing ring, support spring, probe support, film sample to be measured, film sample substrate electrod to be measured, film sample upper surface electrode to be measured, testing sample film and lead-in wires that structure is identical, wherein:
Sample stage axially is connected with this specimen holder level along described specimen holder;
Film sample to be measured is fixed on the described sample stage;
Two pieces of spring probes that structure is identical, wherein first spring probe links to each other with the substrate electrod of described film sample to be measured in the bottom, and second spring probe links to each other with described film sample upper surface electrode to be measured in the bottom;
Probe support has first, second totally two probe supports, and an end of each probe support links to each other with the top of described spring probe respectively accordingly, and the other end links to each other with a layer electrodes on the described sample stage,
Gib screw, support spring and pad, described gib screw insert in the described support spring and pass described packing ring after be connected in the screw of opening on the other end of described probe support, described spring probe and probe support can under described support spring and gib screw effect, horizontally rotate angle adjustment or can be with the different upper-lower positions of adjusting described probe support and spring probe of film sample thickness to be measured;
Described film sample to be measured, first spring probe, first probe support have been combined into first loop jointly, described film sample to be measured, second spring probe, second probe support have been combined into second loop jointly, these two loops equate on area but the direction of current loop is opposite, make positive and negative the cancelling out each other of induced electromotive force that produces separately;
Lead-in wire has first, second totally two lead-in wires, connects respectively between two incoming ends of described two layer electrodes and described sample stage;
Tiny signal is gathered multiplying arrangement, form by lock-in amplifier and oscillograph serial connection, two input ends of described lock-in amplifier link to each other with described two pieces of spring probes respectively by lead, the output terminal of this lock-in amplifier inserts oscillographic first passage (1), and the electric current of another output terminal output of described bipolar power supply inserts described oscillographic second channel (2), and this oscillograph and described computing machine are interconnected simultaneously.
The magnetic electricity performance test macro of described multiferroic film material is characterized in that: the helmholtz coil inside of this tester shields altogether by coated with conductive coating material and electromagnet pole shoe.
Below in conjunction with accompanying drawing principle of the present invention, structure and embodiment are further described:
The circuit side connector block diagram of this tester as shown in Figure 1.The composition of this tester can be divided into following components:
(1) direct current biasing field generator for magnetic
Comprise: electromagnet 1, direct supply 2 and gaussmeter 3.The direct supply drive magnetic produces the direct current biasing magnetic field H
DCThe probe 15 of gaussmeter is placed between the magnetic pole of electromagnet, is used to measure H
DCSize and Orientation.
(2) AC magnetic field generating means
Comprise: helmholtz coil 4, bipolar power supply 6 and function signal generator 5.Function signal generator is exported certain amplitude, and frequency is from sine, square wave or the self-editing waveform voltage of 1Hz-150kHz, and the control bipolar power supply amplifies and adjusts, thereby drives the alternating magnetic field H that helmholtz coil produces same frequency
AcThe alternating magnetic field amplitude that is produced near or surpass some single-phase multiferroic film materials or some ferromagnetic thin film material saturation magnetic fields.
(3) film sample probe clamping device
The film sample clamping device, be inserted horizontally in the described helmholtz coil along the direction that adds alternating magnetic field, this film sample clamping device is made of jointly film sample Spin Control part to be measured and film sample retained part to be measured, wherein: film sample Spin Control part to be measured, comprise: specimen holder and with the coaxial film sample rotary turnplate to be measured of fixedlying connected of this specimen holder, the corner of described film sample rotary turnplate to be measured is finely tuned between+5 °～-5 °; Film sample retained part to be measured, contain sample stage, two pieces of spring probe, gib screw, packing ring, support spring, probe support, film sample to be measured, film sample substrate electrod to be measured, film sample upper surface electrode to be measured, testing sample film and lead-in wires that structure is identical, as shown in Figure 2.Testing sample is placed on the sample stage, two pieces of spring probes that structure is identical, and wherein first spring probe links to each other with the substrate electrod of described film sample to be measured in the bottom, and second spring probe links to each other with described film sample upper surface electrode to be measured in the bottom; Probe support has first, second totally two probe supports, and an end of each probe support links to each other with the top of described spring probe respectively accordingly, and the other end links to each other with a layer electrodes on the described sample stage; Gib screw, support spring and pad, described gib screw insert in the described support spring and pass described packing ring after be connected in the screw of opening on the other end of described probe support, described spring probe and probe support can under described support spring and gib screw effect, horizontally rotate angle adjustment or can be with the different upper-lower positions of adjusting described probe support and spring probe of film sample thickness to be measured; Spring probe is the substrate electrod and the film upper surface electrode of contact membrane sample respectively, probe and support can under the effect of support spring and fixing rivet, horizontally rotate the angle adjustment with the different height control up and down of thickness of sample, as shown in Figure 3.Described film sample to be measured, first spring probe, first probe support have been combined into first loop jointly, described film sample to be measured, second spring probe, second probe support have been combined into second loop jointly, these two loops equate on area but the direction of current loop is opposite, make positive and negative the cancelling out each other of induced electromotive force that produces separately; Lead-in wire has first, second totally two lead-in wires, connects respectively between two incoming ends of described two layer electrodes and described sample stage.Detect the resistance of sample between two probes by ohmmeter, by horizontally rotating probe and adjusting height and position, make sample resistance remain on a steady state value, for common multiferroic film sample, resistance value is generally 100 Ω～20M Ω, when the resistance value registration remains unchanged, then represent to contact between probe and the sample good.
(4) signal pickup assembly
Signal pickup assembly is formed by lock-in amplifier 8 and oscillograph 7 serial connections, two input ends of described lock-in amplifier link to each other with described two pieces of spring probes respectively by lead, the output terminal of this lock-in amplifier inserts oscillographic first passage (1), and the electric current of another output terminal output of described bipolar power supply inserts described oscillographic second channel (2), this oscillograph and described computing machine are interconnected simultaneously, as shown in Figure 1.
(5) computing machine
The concrete course of work is:
1) film sample to be measured is placed film sample probe clamping device to be measured, wherein one piece of spring probe links to each other with film sample substrate electrod to be measured, and another piece spring probe links to each other with film sample upper surface electrode to be measured; Utilize ohmmeter check probe and sample contact quality, and adjust probe location, it is good to make it contact.
2) film sample to be measured and film sample clamping device to be measured are together placed magnetic field;
3) type of analysis and judgement film sample is selected the method for testing that adapts;
Method one:
4) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, and making bipolar power supply drive helmholtz coil generation frequency is the square wave excitation magnetic field H of f
Ac, the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
5) computing machine obtains film sample response voltage to be measured by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
6) response wave shape that produces by sample in the analysis oscillograph, manual fine-tuning film sample whirligig to be measured, making the sample response waveform is square-wave waveform, and fixes this position, this moment is because the spike waveform disappearance that electromagnetic induction phenomenon produces;
7) computing machine utilizes the direct supply drive magnetic to produce direct current biasing magnetic field, by changing the size of direct supply output current, changes the direct current biasing magnetic field H
DCSize, measure the direct current biasing magnetic field H by gaussmeter
DCSize and Orientation;
8) computing machine reads sample response voltage value U (H by lock-in amplifier
DC), according to following formula, carry out data processing and obtain this direct current biasing magnetic field H
DCFollowing magnetoelectricity voltage coefficient α
EAmplitude, wherein t is the thickness of film sample to be measured;
9) repeating step 7) to 87), draw magnetoelectricity voltage coefficient α under a certain fixed frequency f
EWith the direct current biasing magnetic field H
DCChanging Pattern.
Method two:
4) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, makes bipolar power supply drive helmholtz coil and produces the sinusoidal excitation magnetic field H
Ac, and the output current sample waveform of bipolar power supply outputed to oscillographic second channel (2), the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
5) computing machine obtains sample response voltage by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
6) by the phase place ψ between the current sample waveform of analyzing film sample to be measured produces in the oscillograph response wave shape and bipolar power supply generation, manual fine-tuning film sample whirligig to be measured, making between sample response waveform and the current sample waveform phase differential is 0 or pi/2, and fixes this position;
7) computing machine utilizes the direct supply drive magnetic to produce direct current biasing magnetic field, by changing the size of direct supply output current, changes the direct current biasing magnetic field H
DCSize, measure the direct current biasing magnetic field H by gaussmeter
DCSize and Orientation;
8) computing machine changes the frequency of sine alternating magnetic field by the output frequency that changes function signal generator, and the constant current of control bipolar power supply output keeps constant alternating magnetic field amplitude H
AcSize;
9) computing machine reads sample response voltage value U (f) by lock-in amplifier, and according to following formula, computing machine carries out data processing and obtains magnetoelectricity voltage coefficient α under a certain frequency f
EAmplitude, wherein t is the thickness of film sample to be measured;
10) repeating step 8) to 9), draw at a certain fixedly D.C. magnetic field H
DCFollowing magnetoelectricity voltage coefficient α
EChanging Pattern with alternative frequency f.
Method three:
4) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, makes bipolar power supply drive helmholtz coil and produces the sinusoidal excitation magnetic field H
Ac, and the current sample waveform of bipolar power supply output outputed to oscillograph second channel (2), the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
5) computing machine obtains sample response voltage by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
6) by the phase place ψ between the current sample waveform of analyzing film sample to be measured produces in the oscillograph response wave shape and bipolar power supply generation, manual fine-tuning film sample whirligig to be measured, making between sample response waveform and the current sample waveform phase differential is 0 or pi/2, and fixes this position;
7) computing machine changes the amplitude H of sine alternating magnetic field by the output amplitude that changes function signal generator
AcSize;
8) computing machine reads sample response voltage value U (H by lock-in amplifier
Ac), according to following formula, carry out data processing and obtain a certain fixed frequency f, this alternating magnetic field H
AcBottom electrode P value, wherein t is the thickness of film sample to be measured, ε
0Be permittivity of vacuum, ε
rRelative dielectric constant for film sample to be measured;
9) repeating step 7) to 8), draw under a certain fixed frequency f multiferroic film sample electrode value P with alternating magnetic field H
AcChanging Pattern.
Method four:
4) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, makes bipolar power supply drive helmholtz coil and produces the sinusoidal excitation magnetic field H
Ac, and the current sample waveform of bipolar power supply output outputed to oscillograph second channel (2), the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
5) computing machine obtains sample response voltage by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
6) by the phase place ψ between the current sample waveform of analyzing film sample to be measured produces in the oscillograph response wave shape and bipolar power supply generation, manual fine-tuning film sample whirligig to be measured, making between sample response waveform and the current sample waveform phase differential is 0 or pi/2, and fixes this position;
7) computing machine utilizes the direct supply drive magnetic to produce direct current biasing magnetic field, by changing the size of direct supply output current, changes the direct current biasing magnetic field H
DCSize, measure the direct current biasing magnetic field H by gaussmeter
DCSize and Orientation;
8) computing machine changes the amplitude H of sine alternating magnetic field by the output amplitude that changes function signal generator
AcSize;
9) computing machine reads sample response voltage value U (H by lock-in amplifier
DC, H
Ac), according to following formula, carry out data processing and obtain at this bias magnetic field H
DC, a certain fixed frequency f, this alternating magnetic field H
AcUnder electric polarization P value, wherein t is the thickness of film sample to be measured, ε
0Be permittivity of vacuum, ε
rRelative dielectric constant for film sample to be measured;
10) repeating step 7) to 9), draw at different bias magnetic field H
DCDown, a certain fixed frequency f bottom electrode P value is with alternating electric field H
AcThe rule that changes
Below, be example with dissimilar multiferroic film samples respectively, the operating process of different method of testings of the present invention is described.
A) example one: lead zirconate titanate (PZT)-many iron of cobalt ferrite (CFO) lamination property laminated film
Use sol-gel method on the platinum plating silicon chip, to prepare lead zirconate titanate (PZT)-many iron of cobalt ferrite (CFO) lamination property laminated film, and plating platinum film upper surface electrode, utilize Probe clip to be held in sample stage testing sample and be fixed on the specimen holder, guarantee that contact is good, set H
DC, f, make alternating magnetic field produce square-wave waveform, rotate rotating disk then and in ± 5 ° of scopes, rotate specimen holder gently, treat that the spike in the response signal waveform partly eliminates, fix this angle, change the direct current biasing magnetic field value successively, read magnetoelectricity signal magnitude under each bias magnetic field from the lock-in amplifier successively by computing machine, obtain the amplitude of magnetic-electric coefficient and the Changing Pattern between the direct current biasing magnetic field according to computing formula, the result as shown in Figure 4.
B) example two: barium titanate (BTO)-many iron of nickel ferrite based magnetic loaded (NFO) lamination property laminated film
Use pulse laser sediment method to prepare barium titanate (BTO)-many iron of nickel ferrite based magnetic loaded (NFO) lamination property laminated film on the strontium titanate monocrystal chip of niobium mixing, and plating platinum film upper surface electrode, utilize Probe clip to be held in sample stage testing sample and be fixed on the specimen holder, guarantee that contact is good, set H
DC, H
DCMake alternating magnetic field produce sinusoidal waveform, rotate rotating disk then and in ± 5 ° of scopes, rotate specimen holder gently, treat that response signal waveform and reference signal phase differential are 0 or during π, fix this angle, change the driving magnetic field frequency successively, read magnetoelectricity signal magnitude under each bias magnetic field from the lock-in amplifier successively by computing machine, obtain the amplitude of magnetic-electric coefficient and the Changing Pattern between the alternating magnetic field frequency according to computing formula, the result as shown in Figure 5.
C) example three: the single-phase multiferroic film of ferrous acid bismuth (BFO)
Use colloidal sol on the platinum plating silicon chip, prepare the single-phase multiferroic film of ferrous acid bismuth than method, and the plating platinum film upper surface electrode with withing fixed attention, utilize Probe clip to be held in sample stage testing sample and be fixed on the specimen holder, guarantee contact well, setting f, H
DC=0Oe, make alternating magnetic field produce sinusoidal waveform, rotate rotating disk then and in ± 5 ° of scopes, rotate specimen holder gently, treat that response signal waveform and reference signal phase differential are 0 or during π, fix this angle, change the amplitude of driving magnetic field successively, read magnetoelectricity signal magnitude under each different big or small alternating magnetic field from the lock-in amplifier successively by computing machine, obtain the Changing Pattern of this film sample between no bias magnetic field bottom electrodeization and alternating magnetic field frequency according to computing formula, the result as shown in Figure 6.
D) example four: the single-phase multiferroic film of ferrous acid bismuth (BFO)
Use colloidal sol on the platinum plating silicon chip, to prepare the single-phase multiferroic film of ferrous acid bismuth than method with fixed attention, and ferro-nickel alloy film upper surface electrode, utilize Probe clip to be held in sample stage testing sample and be fixed on the specimen holder, guarantee that contact is good, set f=1000Oe, make alternating magnetic field produce sinusoidal waveform, rotate rotating disk then and in ± 5 ° of scopes, rotate specimen holder gently, treat that response signal waveform and reference signal phase differential are 0 or during π, fix this angle, changing the direct current biasing magnetic field value is respectively-25.44Oe, 0Oe and 25.43Oe, and under each direct current biasing magnetic field condition, change the amplitude of driving magnetic field successively, read magnetoelectricity signal magnitude under each different big or small alternating magnetic field from the lock-in amplifier successively by computing machine, obtain the Changing Pattern of this film sample between different bias magnetic field bottom electrodeizations and alternating magnetic field frequency according to computing formula, the result as shown in Figure 7.
This tester provides and has comprised D.C. magnetic field H
DC, AC magnetic field H
Ac, three kinds of frequency f test changing factor respectively at four kinds of magnetic electricity performance measuring methods of dissimilar multiferroic film materials.
1) the magnetoelectricity voltage coefficient is with the variation relation of frequency f
2) the magnetoelectricity voltage coefficient is with bias magnetic field H
DCVariation relation;
3) the mangneto electric polarization is with AC magnetic field H
AcVariation relation;
4) the mangneto electric polarization is in the different DC biased magnetic field H
DCDown, with AC magnetic field H
AcVariation relation.
Claims (6)
1. a multiferroic film material magnetic electricity performance test macro is characterized in that, contains: computing machine, direct current biasing field generator for magnetic, AC magnetic field generating means, tiny signal are gathered multiplying arrangement and film sample probe clamping device, wherein:
The direct current biasing field generator for magnetic contains: electromagnet, direct supply and gaussmeter, wherein:
Gaussmeter, input end links to each other with the measuring control signal output terminal of described computing machine, and the signal output part of this gaussmeter links to each other with the measuring-signal input end of described computing machine;
Direct supply, with described computer interconnection, the control signal of computing machine under receiving, to this computing machine output dc voltage signal, simultaneously, described direct supply is powered to described magnet spool;
The AC magnetic field generating means contains: helmholtz coil, function signal generator and bipolar power supply, wherein:
Bipolar power supply is powered to described helmholtz coil, and making this helmholtz coil produce frequency is square wave or the sine-wave excitation magnetic field H ac of f;
Helmholtz coil is connected in the described electromagnet in coaxially, is inserted with the probe of described gaussmeter in this helmholtz coil, in order to measure the size of alternating magnetic field Hac;
Function signal generator, regulation and control are to the waveform and the frequency of the alternating voltage of described bipolar power supply under the control of described computing machine;
The film sample clamping device is inserted horizontally in the described helmholtz coil along the direction that adds alternating magnetic field, and this film sample clamping device is made of jointly film sample Spin Control part to be measured and film sample retained part to be measured, wherein:
Film sample Spin Control part to be measured comprises: specimen holder and with the coaxial film sample rotary turnplate to be measured of fixedlying connected of this specimen holder, the corner of described film sample rotary turnplate to be measured is finely tuned between+5 °～-5 °;
Film sample retained part to be measured, contain sample stage, two pieces of spring probe, gib screw, packing ring, support spring, probe support, film sample to be measured, film sample substrate electrod to be measured, film sample upper surface electrode to be measured, testing sample film and lead-in wires that structure is identical, wherein:
Sample stage axially is connected with this specimen holder level along described specimen holder;
Film sample to be measured is fixed on the described sample stage;
Two pieces of spring probes that structure is identical, wherein first spring probe links to each other with the substrate electrod of described film sample to be measured in the bottom, and second spring probe links to each other with described film sample upper surface electrode to be measured in the bottom;
Probe support has first, second totally two probe supports, and an end of each probe support links to each other with the top of described spring probe respectively accordingly, and the other end links to each other with a layer electrodes on the described sample stage,
Gib screw, support spring and pad, described gib screw insert in the described support spring and pass described packing ring after be connected in the screw of opening on the other end of described probe support, described spring probe and probe support can under described support spring and gib screw effect, horizontally rotate angle adjustment or can be with the different upper-lower positions of adjusting described probe support and spring probe of film sample thickness to be measured;
Described film sample to be measured, first spring probe, first probe support have been combined into first loop jointly, described film sample to be measured, second spring probe, second probe support have been combined into second loop jointly, these two loops equate on area but the direction of current loop is opposite, make positive and negative the cancelling out each other of induced electromotive force that produces separately;
Lead-in wire has first, second totally two lead-in wires, connects respectively between two incoming ends of described two layer electrodes and described sample stage;
Tiny signal is gathered multiplying arrangement, form by lock-in amplifier and oscillograph serial connection, two input ends of described lock-in amplifier link to each other with described two pieces of spring probes respectively by lead, the output terminal of this lock-in amplifier inserts oscillographic first passage (1), and the electric current of another output terminal output of described bipolar power supply inserts described oscillographic second channel (2), and this oscillograph and described computing machine are interconnected simultaneously.
2. the magnetic electricity performance test macro of multiferroic film material according to claim 1 is characterized in that: the helmholtz coil inside of this tester shields altogether by coated with conductive coating material and electromagnet pole shoe.
3. a kind of multiferroic film material magnetic electricity performance test macro according to claim 1 and the method for testing of a kind of magnetic electricity performance of proposing is characterized in that, contain following steps successively:
1) film sample to be measured is placed film sample probe clamping device to be measured, wherein one piece of spring probe links to each other with film sample substrate electrod to be measured, and another piece spring probe links to each other with film sample upper surface electrode to be measured;
2) film sample to be measured and film sample clamping device to be measured are together placed magnetic field;
3) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, and making bipolar power supply drive helmholtz coil generation frequency is the square wave excitation magnetic field H of f
Ac, the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
4) computing machine obtains film sample response voltage to be measured by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
5) response wave shape that produces by sample in the analysis oscillograph, manual fine-tuning film sample whirligig to be measured, making the sample response waveform is square-wave waveform, and fixes this position, this moment is because the spike waveform disappearance that electromagnetic induction phenomenon produces;
6) computing machine utilizes the direct supply drive magnetic to produce direct current biasing magnetic field, by changing the size of direct supply output current, changes the direct current biasing magnetic field H
DCSize, measure the direct current biasing magnetic field H by gaussmeter
DCSize and Orientation;
7) computing machine reads sample response voltage value U (H by lock-in amplifier
DC), according to following formula, carry out data processing and obtain this direct current biasing magnetic field H
DCFollowing magnetoelectricity voltage coefficient α
EAmplitude, wherein t is the thickness of film sample to be measured;
8) repeating step 6) to 7), draw magnetoelectricity voltage coefficient α under a certain fixed frequency f
EWith the direct current biasing magnetic field H
DCChanging Pattern.
4. a kind of multiferroic film material magnetic electricity performance test macro according to claim 1 and the method for testing of a kind of magnetic electricity performance of proposing is characterized in that, contain following steps successively:
1) film sample to be measured is placed film sample probe clamping device to be measured, wherein one piece of spring probe links to each other with film sample substrate electrod to be measured, and another piece spring probe links to each other with film sample upper surface electrode to be measured;
2) film sample to be measured and film sample clamping device to be measured are together placed magnetic field;
3) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, makes bipolar power supply drive helmholtz coil and produces the sinusoidal excitation magnetic field H
Ac, and the output current sample waveform of bipolar power supply outputed to oscillographic second channel (2), the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
4) computing machine obtains sample response voltage by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
5) by the phase place ψ between the current sample waveform of analyzing film sample to be measured produces in the oscillograph response wave shape and bipolar power supply generation, manual fine-tuning film sample whirligig to be measured, making between sample response waveform and the current sample waveform phase differential is 0 or pi/2, and fixes this position;
6) computing machine utilizes the direct supply drive magnetic to produce direct current biasing magnetic field, by changing the size of direct supply output current, changes the direct current biasing magnetic field H
DCSize, measure the direct current biasing magnetic field H by gaussmeter
DCSize and Orientation;
7) computing machine changes the frequency of sine alternating magnetic field by the output frequency that changes function signal generator, and the constant current of control bipolar power supply output keeps constant alternating magnetic field amplitude H
AcSize;
8) computing machine reads sample response voltage value U (f) by lock-in amplifier, and according to following formula, computing machine carries out data processing and obtains magnetoelectricity voltage coefficient α under a certain frequency f
EAmplitude, wherein t is the thickness of film sample to be measured;
9) repeating step 7) to 8), draw at a certain fixedly D.C. magnetic field H
DCFollowing magnetoelectricity voltage coefficient α
EChanging Pattern with alternative frequency f.
5. a kind of multiferroic film material magnetic electricity performance test macro according to claim 1 and the method for testing of a kind of magnetic electricity performance of proposing is characterized in that, contain following steps successively:
1) film sample to be measured is placed film sample probe clamping device to be measured, wherein one piece of spring probe links to each other with film sample substrate electrod to be measured, and another piece spring probe links to each other with film sample upper surface electrode to be measured;
2) film sample to be measured and film sample clamping device to be measured are together placed magnetic field;
3) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, make bipolar power supply drive helmholtz coil and produce sinusoidal excitation magnetic field H ac, and the current sample waveform that bipolar power supply is exported outputs to oscillograph second channel (2), the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measures the size of alternating magnetic field Hac;
4) computing machine obtains sample response voltage by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
5) by the phase place ψ between the current sample waveform of analyzing film sample to be measured produces in the oscillograph response wave shape and bipolar power supply generation, manual fine-tuning film sample whirligig to be measured, make between sample response waveform and the current sample waveform phase differential be 0 or/2, and fix this position;
6) computing machine changes the size of the amplitude Hac of sine alternating magnetic field by the output amplitude that changes function signal generator;
7) computing machine reads sample response voltage value U (Hac) by lock-in amplifier, according to following formula, carry out data processing and obtain a certain fixed frequency f, this alternating magnetic field Hac bottom electrode P value, wherein t is the thickness of film sample to be measured, ε 0 is a permittivity of vacuum, and ε r is the relative dielectric constant of film sample to be measured;
8) repeating step 6) to 7), draw under a certain fixed frequency f multiferroic film sample electrode value P with alternating magnetic field H
AcChanging Pattern.
6. a kind of multiferroic film material magnetic electricity performance test macro according to claim 1 and the method for testing of a kind of magnetic electricity performance of proposing is characterized in that, contain following steps successively:
1) film sample to be measured is placed film sample probe clamping device to be measured, wherein one piece of spring probe links to each other with film sample substrate electrod to be measured, and another piece spring probe links to each other with film sample upper surface electrode to be measured;
2) film sample to be measured and film sample clamping device to be measured are together placed magnetic field;
3) computing machine utilizes function signal generator regulation and control waveform to remove to control bipolar power supply, makes bipolar power supply drive helmholtz coil and produces the sinusoidal excitation magnetic field H
Ac, and the current sample waveform of bipolar power supply output outputed to oscillograph second channel (2), the probe of gaussmeter is placed on helmholtz coil inside between electromagnet pole, measure alternating magnetic field H
AcSize;
4) computing machine obtains sample response voltage by lock-in amplifier, and the signal of lock-in amplifier outputs to oscillographic first passage (1) simultaneously;
5) by the phase place ψ between the current sample waveform of analyzing film sample to be measured produces in the oscillograph response wave shape and bipolar power supply generation, manual fine-tuning film sample whirligig to be measured, making between sample response waveform and the current sample waveform phase differential is 0 or pi/2, and fixes this position;
6) computing machine utilizes the direct supply drive magnetic to produce direct current biasing magnetic field, by changing the size of direct supply output current, changes the direct current biasing magnetic field H
DCSize, measure the direct current biasing magnetic field H by gaussmeter
DCSize and Orientation;
7) computing machine changes the amplitude H of sine alternating magnetic field by the output amplitude that changes function signal generator
AcSize;
8) computing machine reads sample response voltage value U (H by lock-in amplifier
DC, H
Ac), according to following formula, carry out data processing and obtain at this bias magnetic field H
DC, a certain fixed frequency f, this alternating magnetic field H
AcUnder electric polarization P value, wherein t is the thickness of film sample to be measured, ε
0Be permittivity of vacuum, ε
rRelative dielectric constant for film sample to be measured;
9) repeating step 6) to 8), draw at different bias magnetic field H
DCDown, a certain fixed frequency f bottom electrode P value is with alternating electric field H
AcThe rule that changes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102378860A CN101876691B (en) | 2009-11-20 | 2009-11-20 | System and method for testing magnetoelectricity property of multiferroic thin-film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102378860A CN101876691B (en) | 2009-11-20 | 2009-11-20 | System and method for testing magnetoelectricity property of multiferroic thin-film material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101876691A true CN101876691A (en) | 2010-11-03 |
| CN101876691B CN101876691B (en) | 2012-11-14 |
Family
ID=43019299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102378860A Expired - Fee Related CN101876691B (en) | 2009-11-20 | 2009-11-20 | System and method for testing magnetoelectricity property of multiferroic thin-film material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101876691B (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253351A (en) * | 2011-04-15 | 2011-11-23 | 兰州大学 | Method for testing hard and easy magnetization direction of exchange bias film |
| CN102901471A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院物理研究所 | Nano graphical and ultrawide-band electromagnetic property measuring system |
| CN103698724A (en) * | 2013-12-03 | 2014-04-02 | 西安交通大学 | Measurement system and measurement method for magnetic and electric properties of multiferroic material |
| CN103983926A (en) * | 2014-05-29 | 2014-08-13 | 北京科大分析检验中心有限公司 | Magnetoelectric coefficient measuring method and device based on digital phase locking technology |
| TWI470251B (en) * | 2013-10-16 | 2015-01-21 | Ind Tech Res Inst | Optical inspection system |
| CN104569877A (en) * | 2015-01-13 | 2015-04-29 | 兰州大学 | Testing method for determining hard magnetization direction of magnetic thin film |
| CN104808160A (en) * | 2015-05-08 | 2015-07-29 | 西南应用磁学研究所 | Valid linewidth automatic test system and automatic test method |
| CN105606982A (en) * | 2015-09-11 | 2016-05-25 | 厦门市三安光电科技有限公司 | In-situ test system of nitride light emitting diode magnetoelectricity stress coupling |
| CN106443527A (en) * | 2016-10-27 | 2017-02-22 | 中国地质大学（武汉） | Method and system for measuring magnetization curve of ferromagnetic conductor based on skin effect |
| CN104458590B (en) * | 2014-12-02 | 2017-04-05 | 华侨大学 | A kind of perpendicular magnetization films test device |
| CN106556809A (en) * | 2016-10-26 | 2017-04-05 | 北京航空航天大学 | A kind of thin film magnetic under vacuum environment characterizes instrument |
| CN106597329A (en) * | 2016-11-15 | 2017-04-26 | 华中科技大学 | Automatic magneto-electricity coefficient test system |
| CN108414955A (en) * | 2018-03-15 | 2018-08-17 | 中国科学技术大学 | A kind of survey magnetic specimen holder, magnetic measurement system and survey magnetism method |
| CN109239624A (en) * | 2018-08-30 | 2019-01-18 | 江苏赛诺格兰医疗科技有限公司 | A kind of test macro and test method detecting magnetic shielding material magnetic shield performance |
| CN109358299A (en) * | 2018-09-17 | 2019-02-19 | 安徽虹泰磁电有限公司 | One kind magnetizes motor casing magnetic intensity detection device and detection method |
| CN110045305A (en) * | 2019-04-23 | 2019-07-23 | 同济大学 | A kind of closed circuit soft magnetism measuring instrument of standard |
| CN110749847A (en) * | 2019-10-14 | 2020-02-04 | 清华大学 | Method for determining optimal direct-current bias magnetic field value based on direct-current bias magnetic field |
| CN111398370A (en) * | 2020-04-01 | 2020-07-10 | 苏州大学 | Dielectric test system and method for micro-nano-sized patterned film array |
| CN111896782A (en) * | 2020-08-04 | 2020-11-06 | 河南大学 | Probe and measuring instrument for nondestructive measurement of thin film |
| CN113687277A (en) * | 2021-10-26 | 2021-11-23 | 广东海洋大学 | Test method and system for magnetoelectric composite material sensor |
| CN113720784A (en) * | 2021-10-11 | 2021-11-30 | 阜阳师范大学 | Chromium-based spinel test system based on terahertz waveband magneto-optical spectrum |
| CN113805123A (en) * | 2021-08-12 | 2021-12-17 | 电子科技大学 | Magnetic induction current signal generating and detecting device |
| CN114441830A (en) * | 2022-01-07 | 2022-05-06 | 南方电网数字电网研究院有限公司 | System and method for testing performance of piezoelectric piezoresistive electric field sensor |
| US11747301B2 (en) | 2020-12-22 | 2023-09-05 | Industrial Technology Research Institute | Magnetic field structure |
-
2009
- 2009-11-20 CN CN2009102378860A patent/CN101876691B/en not_active Expired - Fee Related
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253351B (en) * | 2011-04-15 | 2014-02-19 | 兰州大学 | Method for testing hard and easy magnetization direction of exchange bias film |
| CN102253351A (en) * | 2011-04-15 | 2011-11-23 | 兰州大学 | Method for testing hard and easy magnetization direction of exchange bias film |
| CN102901471A (en) * | 2011-07-26 | 2013-01-30 | 中国科学院物理研究所 | Nano graphical and ultrawide-band electromagnetic property measuring system |
| CN102901471B (en) * | 2011-07-26 | 2015-06-03 | 中国科学院物理研究所 | Nano graphical and ultrawide-band electromagnetic property measuring system |
| TWI470251B (en) * | 2013-10-16 | 2015-01-21 | Ind Tech Res Inst | Optical inspection system |
| CN103698724A (en) * | 2013-12-03 | 2014-04-02 | 西安交通大学 | Measurement system and measurement method for magnetic and electric properties of multiferroic material |
| CN103983926A (en) * | 2014-05-29 | 2014-08-13 | 北京科大分析检验中心有限公司 | Magnetoelectric coefficient measuring method and device based on digital phase locking technology |
| CN104458590B (en) * | 2014-12-02 | 2017-04-05 | 华侨大学 | A kind of perpendicular magnetization films test device |
| CN104569877A (en) * | 2015-01-13 | 2015-04-29 | 兰州大学 | Testing method for determining hard magnetization direction of magnetic thin film |
| CN104569877B (en) * | 2015-01-13 | 2017-12-12 | 兰州大学 | Determine the method for testing of thin magnetic film hard direction |
| CN104808160A (en) * | 2015-05-08 | 2015-07-29 | 西南应用磁学研究所 | Valid linewidth automatic test system and automatic test method |
| CN105606982A (en) * | 2015-09-11 | 2016-05-25 | 厦门市三安光电科技有限公司 | In-situ test system of nitride light emitting diode magnetoelectricity stress coupling |
| CN105606982B (en) * | 2015-09-11 | 2018-05-22 | 厦门市三安光电科技有限公司 | A kind of in-situ test system of iii-nitride light emitting devices magnetoelectricity stress coupling |
| CN106556809A (en) * | 2016-10-26 | 2017-04-05 | 北京航空航天大学 | A kind of thin film magnetic under vacuum environment characterizes instrument |
| CN106443527A (en) * | 2016-10-27 | 2017-02-22 | 中国地质大学（武汉） | Method and system for measuring magnetization curve of ferromagnetic conductor based on skin effect |
| CN106597329A (en) * | 2016-11-15 | 2017-04-26 | 华中科技大学 | Automatic magneto-electricity coefficient test system |
| CN106597329B (en) * | 2016-11-15 | 2019-12-17 | 华中科技大学 | automatic change magnetic-electric coefficient test system |
| CN108414955A (en) * | 2018-03-15 | 2018-08-17 | 中国科学技术大学 | A kind of survey magnetic specimen holder, magnetic measurement system and survey magnetism method |
| CN109239624A (en) * | 2018-08-30 | 2019-01-18 | 江苏赛诺格兰医疗科技有限公司 | A kind of test macro and test method detecting magnetic shielding material magnetic shield performance |
| CN109358299A (en) * | 2018-09-17 | 2019-02-19 | 安徽虹泰磁电有限公司 | One kind magnetizes motor casing magnetic intensity detection device and detection method |
| CN110045305A (en) * | 2019-04-23 | 2019-07-23 | 同济大学 | A kind of closed circuit soft magnetism measuring instrument of standard |
| CN110749847A (en) * | 2019-10-14 | 2020-02-04 | 清华大学 | Method for determining optimal direct-current bias magnetic field value based on direct-current bias magnetic field |
| CN110749847B (en) * | 2019-10-14 | 2021-11-12 | 清华大学 | Method for determining optimal direct-current bias magnetic field value based on direct-current bias magnetic field |
| CN111398370B (en) * | 2020-04-01 | 2021-04-06 | 苏州大学 | Dielectric test system and method for micro-nano-sized patterned film array |
| CN111398370A (en) * | 2020-04-01 | 2020-07-10 | 苏州大学 | Dielectric test system and method for micro-nano-sized patterned film array |
| CN111896782A (en) * | 2020-08-04 | 2020-11-06 | 河南大学 | Probe and measuring instrument for nondestructive measurement of thin film |
| US11747301B2 (en) | 2020-12-22 | 2023-09-05 | Industrial Technology Research Institute | Magnetic field structure |
| CN113805123A (en) * | 2021-08-12 | 2021-12-17 | 电子科技大学 | Magnetic induction current signal generating and detecting device |
| CN113720784A (en) * | 2021-10-11 | 2021-11-30 | 阜阳师范大学 | Chromium-based spinel test system based on terahertz waveband magneto-optical spectrum |
| CN113687277A (en) * | 2021-10-26 | 2021-11-23 | 广东海洋大学 | Test method and system for magnetoelectric composite material sensor |
| CN113687277B (en) * | 2021-10-26 | 2022-01-25 | 广东海洋大学 | Test method and system for magnetoelectric composite material sensor |
| CN114441830A (en) * | 2022-01-07 | 2022-05-06 | 南方电网数字电网研究院有限公司 | System and method for testing performance of piezoelectric piezoresistive electric field sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101876691B (en) | 2012-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101876691B (en) | System and method for testing magnetoelectricity property of multiferroic thin-film material | |
| CN1975454B (en) | Electromagnetic coefficient tester for electromagnetic material and testing method thereof | |
| JP5128581B2 (en) | Magnetic particle measuring device and method | |
| WO2001067085A1 (en) | Probe for eddy current testing | |
| CN106597329B (en) | automatic change magnetic-electric coefficient test system | |
| WO2013189112A1 (en) | Nano-thermoelectric multi-parameter in-situ quantitative characterization device based on atomic force microscope | |
| CN111043946B (en) | Magnetic field interference noise test system for eddy current displacement sensor | |
| Buffa et al. | A versatile instrument for the characterization of capacitive micro-and nanoelectromechanical systems | |
| CN108139501B (en) | Device for online detection of magnetic resonance signals from target material in mineral slurry | |
| CN108919150B (en) | Vertical three-phase flexible broadband rotating magnetic characteristic measurement system and measurement method | |
| CN101592715A (en) | The electricity of magnetoelectric material is induced magnetic conversion coefficient proving installation and method of testing | |
| JP2007078500A (en) | Method and apparatus for measuring critical current density of superconductive film | |
| CN112684389A (en) | Cantilever beam-based generalized magnetoelectric effect energy conversion method | |
| CN109655771A (en) | Ac magnetic susceptibility measuring device and its measurement method | |
| Lalwani et al. | Hall-effect sensor technique for no induced voltage in AC magnetic field measurements without current spinning | |
| CN104458590B (en) | A kind of perpendicular magnetization films test device | |
| Postolache et al. | GMR based eddy current sensing probe for weld zone testing | |
| CN107015030B (en) | A kind of surface potential measurement method | |
| Betta et al. | GMR-based instrument for ECT on conductive planar specimens | |
| CN111624533B (en) | Method for testing electric tuning characteristics of magnetic thin film by using TMR magnetic sensor | |
| Butin et al. | New NDE perspectives with magnetoresistance array technologies–from research to industrial applications | |
| US11035912B2 (en) | No-switching AC magnetic hall-effect measurement method | |
| US20040017191A1 (en) | Monitoring device | |
| CN110907489A (en) | Nanoscale thermal conductivity-electric domain in-situ characterization device based on atomic force microscope | |
| CN108414955A (en) | A kind of survey magnetic specimen holder, magnetic measurement system and survey magnetism method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20211120 |