CN101872779A - Image display system and manufacturing method thereof - Google Patents
Image display system and manufacturing method thereof Download PDFInfo
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- CN101872779A CN101872779A CN200910131057A CN200910131057A CN101872779A CN 101872779 A CN101872779 A CN 101872779A CN 200910131057 A CN200910131057 A CN 200910131057A CN 200910131057 A CN200910131057 A CN 200910131057A CN 101872779 A CN101872779 A CN 101872779A
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Abstract
The invention discloses an image display system and a manufacturing method thereof. The image display system comprises a thin film transistor device, wherein the thin film transistor device comprises a substrate with a pixel area, a driver thin film transistor, and a switch thin film transistor; the driver thin film transistor and the switch thin film transistor are respectively positioned in the pixel area and arranged on the substrate; and the driver thin film transistor comprises a polycrystalline silicon active layer and the switch thin film transistor comprises a noncrystalline silicon active layer.
Description
Technical field
The present invention relates to a kind of flat-panel screens technology, (organic light emitting diode OLED) has image display system and the manufacture method thereof that the thin-film transistor (TFT) of different electrical characteristics (electrical characteristic) installs and has these TFT devices in the display particularly to relate to a kind of Organic Light Emitting Diode.
Background technology
In recent years, the demand of active array flat-panel screens increases fast, for example active array Organic Light Emitting Diode (active matrix OLED, AMOLED) display.The AMOLED display utilizes thin-film transistor usually, and (thin film transistor is TFT) as the switch element of pixel region and the driving element of light-emitting component.In addition, the periphery circuit region of AMOLED display (that is drive circuit area) also needs to use the cmos circuit that is made of TFT.
Be divided into amorphous silicon (a-Si) and multi-crystal TFT according to the employed material of active layer.The making of non-crystalline silicon tft is comparatively simple and cost is low, however TFT active layer (active layer) deterioration and be not suitable as the driving element of light-emitting component easily.Existing multi-crystal TFT by low temperature polycrystalline silicon (low temperature polysilicon, LTPS) technology is made, it has the advantage of high carrier mobility and high drive circuit integrated level and low-leakage current.Yet during above-mentioned LTPS technology, the active layer of TFT is to adopt the high power laser light crystallization process formed, so the cost of manufacture height.Moreover, because laser output energy inequality, make the drive current difference and cause display to produce the problem of the defects of vision/non-uniform light (mura) to some extent of formed each OLED drive TFT.
In addition, in the AMOLED display, the electrical characteristics of switch element need be different from the driving element of light-emitting component in the pixel region.For example, driving element need have high subcritical swinging and low threshold voltage characteristics such as (threshold voltage), uses to increase to show GTG (gray scale) and prolong the OLED life-span.Yet with above-mentioned LTPS technology, it is quite difficult making switching TFT and drive TFT with different electrical characteristics.
Summary of the invention
The embodiment of the invention provides a kind of image display system, comprising: thin film transistor device, it comprises: substrate, drive thin film transistors and switching thin-film transistor.Substrate has pixel region.Drive thin film transistors and switching thin-film transistor lay respectively at pixel region and are arranged on the substrate.Wherein, drive thin film transistors comprises polysilicon active layer, and switching thin-film transistor comprises the amorphous silicon active layer.
Another embodiment of the present invention provides a kind of manufacture method of image display system, and wherein this system has thin film transistor device, and the method comprises: substrate is provided, and it has pixel region.On the pixel region of substrate, form drive thin film transistors and switching thin-film transistor respectively.Wherein, drive thin film transistors comprises polysilicon active layer, and switching thin-film transistor comprises the amorphous silicon active layer.
Description of drawings
Fig. 1 shows active array organic light emitting diode display floor map;
Fig. 2 shows the circuit diagram of pixel cell among Fig. 1;
Fig. 3 A to Fig. 3 H shows the manufacture method generalized section according to the image display system with thin-film transistor of the embodiment of the invention; And
Fig. 4 shows image display system block diagram according to another embodiment of the present invention.
Description of reference numerals
10: display floater 10a: pixel cell
12: data line drive circuit 14: scan line drive circuit
16,360: switching thin-film transistor 18,350: drive thin film transistors
20: reservior capacitor 22: light-emitting component
100: pixel region 300: substrate
302: resilient coating 304: polysilicon active layer
304a: source/drain regions 304b: channel region
Insulating barrier 308 in 306: the first: metal level
308a: first grid electrode 308b: bottom electrode
308c: second grid electrode 309: heavy ion injects
Insulating barrier 312 in 310: the second: amorphous silicon layer
314: doped amorphous silicon layer 315,317: opening
322: channel layer 324: source
325: 326: the first source/drain electrodes of amorphous silicon active layer
328: 330: the second source/drain electrodes of top electrode
400: thin film transistor device 500: type flat panel display apparatus
600: input unit 700: electronic installation
D1-Dn: data wire S1-Sn: scan line
Vdd: voltage source
Embodiment
The below making and the use of the explanation embodiment of the invention.Yet, can understand embodiment provided by the present invention easily and only be used for explanation with ad hoc approach making and use the present invention, be not in order to limit the scope of the invention.
Please refer to Fig. 1, it shows active array Organic Light Emitting Diode (AMOLED) display plane schematic diagram.The AMOLED display comprises: display floater 10, data line drive circuit 12 and scan line drive circuit 14.Display floater 10 has a plurality of pixel cells, in order to simplify accompanying drawing, only shows single pixel cell 10a herein.Data line drive circuit 12 has many data wire D1 to Dn, and scan line drive circuit 14 has multi-strip scanning line S1 to Sn.Each pixel cell 10a is connected (for example, data wire D3 and scan line S3) and is arranged in matrix with a data wire and a scan line.
Please refer to Fig. 2, it shows the circuit diagram of pixel cell 10a among Fig. 1.Pixel cell 10a comprises: light-emitting component 22, for example Organic Light Emitting Diode (OLED), thin film transistor device 400 and the storage capacitors 20 that is used to store image data.Thin film transistor device 400 comprises: the open and close state of switch thin-film transistor (switching TFT) 16 that is used for the drive thin film transistors (driving TFT) 18 of driven light-emitting element and is used to switch pixel cell.In the present embodiment, be generally P type thin-film transistor (PTFT) in order to the drive thin film transistors 18 that drives this light-emitting component 22, and switching thin-film transistor 16 is generally N type thin-film transistor (NTFT).The grid of switching thin-film transistor 16 is connected to corresponding scanning line S3, and drain electrode is connected to corresponding data line D3, and source electrode then is connected with an end of reservior capacitor 20 and the grid of drive thin film transistors 18.The other end of reservior capacitor 20 is connected with the source electrode of drive thin film transistors 18, and is connected to voltage source V dd.The drain electrode of drive thin film transistors 18 is connected with light-emitting component 22.
The image display system and the manufacture method thereof of the embodiment of the invention below are described.Fig. 3 H shows the image display system according to the embodiment of the invention, particularly a kind of image display system with thin film transistor device 400.The pixel region manufacturing of embodiments of the invention on transparency carrier be used for pixel cell switching thin-film transistor (as, NTFT) and drive thin film transistors (as, PTFT).
Thin film transistor device 400 comprises the substrate 300 with pixel region 100.Resilient coating 302 can at random be covered on the substrate 300, and with as adhesion coating or contamination barrier between substrate 300 and the follow-up formed active layer, it can be made of silicon oxide layer, silicon nitride layer or its combination institute.
Drive thin film transistors 350 is positioned at pixel region 100 and is arranged on the resilient coating 302 of substrate 300 tops, is positioned at the light-emitting component (not illustrating) of pixel region 100, for example Organic Light Emitting Diode in order to driving.Drive thin film transistors 350 has the top grid structure, and comprises: polysilicon active layer 304, cover polysilicon active layer 304 with as first insulating barrier 306 of gate dielectric and the first grid electrode 308a that is positioned at polysilicon active layer 304 tops.Polysilicon active layer 304 comprises: channel region 304b and a pair of source/drain regions 304a that is separated by channel region 304b.A pair of first source/drain electrodes 326 of first grid electrode 308a both sides is electrically connected to source/drain regions 304a respectively.
Switching thin-film transistor 360 is positioned at pixel region 100 and is arranged on the resilient coating 302 of substrate 300 tops, in order to switch the open and close state of pixel.Switching thin-film transistor 360 has bottom gate configuration, and comprises: second grid electrode 308c, cover second grid electrode 308c with as second insulating barrier 310 of gate dielectric and the non-polysilicon active layer 325 that is positioned at gate electrode 308 tops.Non-polysilicon active layer 325 comprises: a pair of source 324 and the channel layer 322 between source 324 and second grid electrode 308c.A pair of second source/drain electrodes 330 of non-polysilicon active layer 325 both sides contacts with the usefulness as electric connection with source 324 respectively.
Storage capacitors is positioned at pixel region 100 and is arranged on the resilient coating 302 of substrate 300 tops, and via second source/drain electrodes 330 wherein and be electrically connected to switching thin-film transistor 360.Storage capacitors comprise bottom electrode 308b, top electrode 328 and between bottom electrode 308b and top electrode 328 with second insulating barrier 310 as capacitance dielectric layer.In the present embodiment, first grid electrode 308a, second grid electrode 308c and bottom electrode 308b can be made of same metal level, and first source/drain electrodes 326, second source/drain electrodes 330 and top electrode 328 can be made of same metal level.
Next, Fig. 3 A to Fig. 3 H shows the manufacture method generalized section according to the image display system with thin-film transistor 400 of the embodiment of the invention.Please refer to Fig. 3 A, substrate 300 is provided, it has pixel region 100.Substrate 300 can be made of glass, quartz or other transparent materials.Then, can at random on substrate 300, form resilient coating 302.Afterwards, on resilient coating 302, form amorphous silicon layer (not illustrating).Then, it is carried out crystallization process and Patternized technique, to form polysilicon layer active layer 304.In the present embodiment, polysilicon layer 304 can carry out this crystallization process by non-laser crystallization technology.For example, non-laser crystallization technology comprises: solid phase crystallization method (solid phase crystallization, SPC), metal induced crystallization method (metal induced crystallization, MIC), metal induced side crystallization method (metal induced lateral crystallization, MILC), electric field enhancing metal induced side crystallization method (field enhanced metal induced lateral crystallization, FE-MILC), or electric field strengthens rapid thermal annealing method (field enhanced rapid thermal annealing) or the like.Only be illustration in these various crystallization methods of enumerating, the present invention is not limited to this.
Please refer to Fig. 3 B, above the pixel region 100 of substrate 300, form first insulating barrier 306 and metal level 308 in regular turn and cover polysilicon active layer 304, wherein first insulating barrier 306 is in order to as gate dielectric, and metal level 308 is in order to definition gate electrode and capacitor lower electrode.First insulating barrier 306 can be made of silica, silicon nitride or other known grid dielectric materials, and metal level 308 can be made of molybdenum (Mo), molybdenum alloy or other known metal electrode materials.
Please refer to Fig. 3 C, patterned metal layer 308, to form first grid electrode 308a, second grid electrode 308c and bottom electrode 308b respectively on first insulating barrier 306 of pixel region 100, wherein first grid electrode 308a is positioned on first insulating barrier 306 of polysilicon active layer 304 tops.Afterwards, with first grid electrode 308a as injecting mask (implant mask), polysilicon active layer 304 is implemented heavy ion inject (heavy ion implantation) 309, in polysilicon active layer 304, to form channel region 304b and source/drain regions 304a, for example P type source/drain regions.Herein, polysilicon active layer 304, first insulating barrier 306 and first grid electrode 308a constitute drive thin film transistors 350.
Please refer to Fig. 3 D, on first insulating barrier 306, form second insulating barrier 310, amorphous silicon layer 312 and doped amorphous silicon layer 314 (for example N type doped amorphous silicon layer) in regular turn and cover first grid electrode 308a, second grid electrode 308c and bottom electrode 308b.Second insulating barrier 310 is in order to as gate dielectric and capacitance dielectric layer.Moreover second insulating barrier 310 can be made of silica, silicon nitride or other known grid dielectric materials.
Please refer to Fig. 3 E, by well known photolithography and the etch process amorphous silicon layer 312 of patterning doped amorphous silicon layer 314 and below in regular turn, on second insulating barrier 310 above the second grid electrode 308c, to form amorphous silicon active layer 325.In the present embodiment, amorphous silicon active layer 325 comprises: the source 324 that is formed by doped amorphous silicon layer 314 and between source 324 and second grid electrode 308c and by amorphous silicon layer 312 formed channel layers 322.
Please refer to Fig. 3 F, by well known photolithography and etch process second insulating barrier 310 of first grid electrode 308a both sides and below first insulating barrier 306 in form opening 315 to expose source/drain regions 304a.Simultaneously, form the bottom electrode 308b of opening 317 in second insulating barrier 310 above bottom electrode 308b with exposed portions serve.
Please refer to Fig. 3 G, on second insulating barrier 310, form metal level (not illustrating), and insert opening 315 and 317 and cover amorphous silicon active layer 325.In the present embodiment, metal layer material comprises: aluminium (Al), molybdenum (Mo), titanium (Ti) or its combination.Then, come patterned metal layer, on second insulating barrier 310, to form a pair of first source/drain electrodes 326, top electrode 328 and a pair of second source/drain electrodes 330 respectively by photoetching and etch process.First source/drain electrodes 326 is positioned at first grid 308a both sides substantially, and electrically connects with corresponding source/drain regions 304a via the opening 315 in second insulating barrier 310.Top electrode 328 constitutes storage capacitors with second insulating barrier 310 and the bottom electrode 308b of below.Second source/drain electrodes 330 extend to amorphous silicon active layer 325 upper surfaces respectively and with its electric connection, and the source 324 of exposed portions serve.Moreover wherein second source/drain electrodes 330 electrically connects with the bottom electrode 308b of storage capacitors via the opening 317 in second insulating barrier 310.
Please refer to Fig. 3 H, the source 324 that removal is exposed is to form the channel layer 322 of a pair of source of separating 324 and exposed portions serve.Herein, amorphous silicon active layer 325 (containing a pair of source of separating 324 and channel layer 322), second insulating barrier 310 that is positioned at the below and second grid electrode 308c constitute switching thin-film transistor 360.
According to the foregoing description,, can avoid display to produce the problem of the defects of vision/non-uniform light because the active layer of drive thin film transistors is to adopt the manufacturing of non-laser crystallization metallization processes to form.Moreover, because the active layer of switching thin-film transistor is made of amorphous silicon and the active layer of drive thin film transistors is formed by the manufacturing of non-laser crystallization metallization processes, make drive thin film transistors and switching thin-film transistor compared to using the LTPS technology, the electrical characteristics of drive thin film transistors can be different from the electrical characteristics of switching thin-film transistor, can reduce manufacturing cost simultaneously.
Fig. 4 shows has the image display system block diagram according to another embodiment of the present invention, it may be implemented in the plane and shows (FPD) device 500 or electronic installation 700, for example notebook computer, mobile phone, digital camera, personal digital assistant (personal digital assistant, PDA), desktop computer, television set, automobile-used display or portable DVD player.TFT device 400 according to the present invention can be arranged at flat display apparatus 500, and flat display apparatus 500 can be the OLED display.In other embodiments, TFT device 400 can be arranged at electronic installation 700.As shown in Figure 4, electronic installation 700 comprises: flat display apparatus 500 and input unit 600.Input unit 600 is coupled to type flat panel display apparatus 500, in order to provide input signal (for example, signal of video signal) to flat display apparatus 500 to produce image.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention is when looking appended being as the criterion that claim defined.
Claims (12)
1. image display system comprises:
Thin film transistor device comprises:
Substrate has pixel region; And
Drive thin film transistors and switching thin-film transistor lay respectively at this pixel region and are arranged on this substrate, and wherein this drive thin film transistors comprises polysilicon active layer, and this switching thin-film transistor comprises the amorphous silicon active layer.
2. image display system as claimed in claim 1, wherein this drive thin film transistors also comprises the first grid electrode, is positioned at this polysilicon active layer top, and this switching thin-film transistor also comprises the second grid electrode, is positioned at this amorphous silicon active layer below.
3. image display system as claimed in claim 2, wherein this drive thin film transistors also comprises first source/drain electrodes, be electrically connected to this polysilicon active layer, and this switching thin-film transistor also comprises second source/drain electrodes, be electrically connected to this amorphous silicon active layer, wherein this first source/drain electrodes and this second source/drain electrodes are made of same metal level.
4. image display system as claimed in claim 3, wherein this amorphous silicon active layer also comprises:
Source/drain regions contacts with this second source/drain electrodes; And
Channel region is between this source and this second grid electrode.
5. image display system as claimed in claim 2, wherein this first grid electrode and this second grid electrode are made of same metal level.
6. image display system as claimed in claim 1 also comprises resilient coating, covers this substrate, and is constituted by silicon oxide layer, silicon nitride layer or its.
7. image display system as claimed in claim 1 also comprises:
Flat display apparatus comprises this thin film transistor device, and wherein this flat display apparatus is an organic light emitting diode display.
8. image display system as claimed in claim 7 also comprises electronic installation, and this electronic installation also comprises:
This flat display apparatus; And
Input unit, be coupled to this flat display apparatus, input to this flat display apparatus in order to provide, make this flat display apparatus show image, wherein this electronic installation comprises notebook computer, mobile phone, digital camera, personal digital assistant, desktop computer, television set, automobile-used display or portable DVD player.
9. the manufacture method of an image display system, wherein this system has thin film transistor device, and this method comprises:
Substrate is provided, and it has pixel region; And
On this pixel region of this substrate, form drive thin film transistors and switching thin-film transistor respectively,
Wherein this drive thin film transistors comprises polysilicon active layer, and this switching thin-film transistor comprises the amorphous silicon active layer.
10. the manufacture method of image display system as claimed in claim 9, wherein this drive thin film transistors also comprises the first grid electrode, be positioned at this polysilicon active layer top, and this switching thin-film transistor also comprises the second grid electrode, be positioned at this amorphous silicon active layer below, and this first grid electrode is defined by metal level with this second grid electrode while and is formed.
11. the manufacture method of image display system as claimed in claim 9 wherein forms this drive thin film transistors and this switching thin-film transistor comprises:
On this pixel region of this substrate, form this polysilicon active layer;
Covering first insulating barrier on this polysilicon active layer and on this substrate;
Form first grid electrode and second grid electrode on this first insulating barrier respectively, wherein this first grid electrode is positioned at this polysilicon active layer top;
On this first grid electrode and this second grid electrode, cover second insulating barrier;
On this second insulating barrier above this second grid electrode, form this amorphous silicon active layer; And
On this second insulating barrier, form first source/drain electrodes and second source/drain electrodes, and be electrically connected to this polysilicon active layer and this amorphous silicon active layer respectively via this second insulating barrier.
12. the manufacture method of image display system as claimed in claim 11, wherein this amorphous silicon active layer also comprises:
Source contacts with this second source/drain electrodes; And
Channel layer is between this source and this second grid electrode.
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