CN101872128A - Nano-photoetching system and nano-photoetching method - Google Patents
Nano-photoetching system and nano-photoetching method Download PDFInfo
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- CN101872128A CN101872128A CN200910133678A CN200910133678A CN101872128A CN 101872128 A CN101872128 A CN 101872128A CN 200910133678 A CN200910133678 A CN 200910133678A CN 200910133678 A CN200910133678 A CN 200910133678A CN 101872128 A CN101872128 A CN 101872128A
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Abstract
The invention provides a nano-photoetching system and a nano-photoetching method which can be used for coating materials on a substrate. The nano-photoetching system of the invention comprises a coating structure and a light beam focusing device, wherein the coating structure is made of the solid-like material and is provided with a contact point for contacting the substrate; and the light beam focusing device can emit light beams and focus the light beams on the contact point of the coating structure to melt the material on the contact point. When the material on the contact point is melt down and the contact point contacts the substrate, the material can be coated on a position on the substrate, which contacts the contact point.
Description
Technical field
The present invention relates to a kind of nano-photoetching system and nano-photoetching method, and especially, the present invention relates to a kind of with the focused beam molten material material is coated nano-photoetching system and the nano-photoetching method on the substrate.
Background technology
The research of relevant nanosecond science and technology in recent years spreads all over all circles, and its Related Research Domain embraces a wide spectrum of ideas, and can be applicable to multiple Different Industries.Nanoimprinting technology is one of technology that quite attracts attention in the nano-fabrication technique, and it can be produced minimum structure and pattern and form microdevice on substrate.Traditional nanoimprinting technology is to utilize mode or the heating wire type of heating be stained with China ink that material is arranged on the probe, by the probe contact substrate so that material is coated on the substrate.
See also Figure 1A and Figure 1B, Figure 1A and Figure 1B show the synoptic diagram of nanoimprinting technology of the prior art.Shown in Figure 1A, lithographic equipment 1 belongs to the nanoimprinting technology of being stained with pen type, and it comprises probe 10, and is coated with liquid material 12 on the probe 10., probe 10 contact substrates, therefore liquid material 12 finish nano-photoetching but can being attached on the substrate.Because material 12 is to be attached to earlier to be transferred on the probe 10 on the substrate again, therefore structure and the pattern that is finally presented on substrate will have bigger live width.In addition, if be coated with when making a mistake, pattern that substrate was coated with or structure can't be modified.
Shown in Figure 1B, lithographic equipment 2 belongs to the nanoimprinting technology of heated type.Different with above-mentioned prior art is do not adhere to liquid material on the probe 20 of lithographic equipment 2, but probe 20 to be made of the material of desiring to coat on the substrate promptly itself.Probe 20 is solid-state coating material, and heating wire 22 can be arranged in the probe 20 with heated probe 20.When probe 20 is heated to molten state by heating wire 22, but probe 20 contact substrates and the material of partial melting state is coated on the substrate.Lithographic equipment 2 formed structure and pattern on substrate determine its live width according to the most advanced and sophisticated big I of probe 20.Yet, owing to all need a heating wire in every probe 20, and need circuit providing current to heating wire simultaneously, so its cost of manufacture is higher.Similarly, if be coated with when making a mistake, pattern that substrate was coated with or structure also can't be modified.
Above-mentioned each prior art is when coating material is on substrate and can't Direct observation be coated with situation, therefore is easy to take place the coating mistake.Simultaneously, also can't correct mistakes part after the coating mistake and cause waste.In addition, above-mentioned prior art is used for the large tracts of land coating time need be provided with many probes, and the nanoimprinting technology of heated type is needed provide heating wire and circuit to every probe, therefore will increase the complexity and the manufacturing cost of technology.
Summary of the invention
One object of the present invention is to provide a kind of nano-photoetching system, its with the focused beam molten material so that material is coated on the substrate, to address the above problem.
According to a specific embodiment, nano-photoetching system of the present invention comprises applying structure and beam condenser.Applying structure is made by solid shape material, and have on the applying structure can be in order to the contact point of contact substrate.Beam condenser can send light beam and further focus the light beam on the contact point of applying structure, and then the material on the heating contact point makes it present molten state.When the material on the contact point presents molten state and contact substrate, can attachment portion on the substrate fusing material and reach lithographic results.
In this specific embodiment, applying structure is a probe, and contact point is the tip of probe.In another specific embodiment, applying structure can be planar structure, and this contact point is first focus point on this planar structure, and contact point can be lip-deep a plurality of contact points of planar structure and substrate contacts.
According to nano-photoetching system of the present invention, wherein, this applying structure is arranged on the bearing carrier.
According to nano-photoetching system of the present invention, in one embodiment, this bearing carrier is movably.
According to nano-photoetching system of the present invention, wherein, when this first light beam was heated to the fusing point of this material with this first tip, this first most advanced and sophisticated this substrate of contact was to coat this material on this substrate.
According to nano-photoetching system of the present invention, in one embodiment, this applying structure comprises second probe, and this beam condenser can focus on this first light beam second tip of this second probe.
According to nano-photoetching system of the present invention, wherein, when this first light beam heated this first focus point to the fusing point of this material, this first focus point contacted this substrate so that this material is coated on this substrate.
According to nano-photoetching system of the present invention, in one embodiment, this planar structure comprises second focus point, and this beam condenser can focus on this second focus point with this first light beam.
According to nano-photoetching system of the present invention, in one embodiment, this first light beam is a laser beam.
According to nano-photoetching system of the present invention, in one embodiment, this beam condenser further comprises: first luminescence unit, in order to send this first light beam; And first lens, in order to focus on this first light beam.
According to nano-photoetching system of the present invention, in one embodiment, this beam condenser further comprises: phase-modulator, be arranged between this first luminescence unit and this first lens, and this phase-modulator is in order to receive this first light beam and to adjust the phase place of this first light beam.
According to nano-photoetching system of the present invention, in one embodiment, this beam condenser further comprises: second luminescence unit, in order to send second light beam; And second lens, in order to this second light beam is focused on this applying structure.
According to nano-photoetching system of the present invention, wherein, this applying structure further comprises fluorescein stain and is scattered in this material, and this fluorescein stain can be emitted beam by this first beam excitation.
According to nano-photoetching system of the present invention, wherein, this beam condenser can focus on this first light beam on this substrate.
Another object of the present invention is to provide a kind of nano-photoetching method, makes material be easy to coat on the substrate with the light beam type of heating.
According to a specific embodiment, nano-photoetching method of the present invention comprises the following step: focus the light beam on the focus point of the applying structure of being made by a kind of material, make focus point present molten state; And the focus point contact substrate that will present molten state is to coat material on the substrate.In another specific embodiment, the order of above-mentioned steps also can be changed mutually, that is to say, the focus point of the applying structure that will be made by this material contacts this substrate earlier, focuses the light beam on this focus point of this substrate of contact to cause this focus point to present molten state so that this material is coated this substrate again.
Similarly, above-mentioned applying structure can be probe, and focus point can be the tip of probe.On the other hand, applying structure also can be planar structure, and focus point can be lip-deep a plurality of contact points of planar structure and substrate contacts.
Can be further understood by following detailed Description Of The Invention and appended accompanying drawing about the advantages and spirit of the present invention.
Description of drawings
Figure 1A and Figure 1B show the synoptic diagram of the nanoimprinting technology of prior art.
Fig. 2 shows the synoptic diagram according to the nano-photoetching system of a specific embodiment of the present invention.
Fig. 3 shows the synoptic diagram according to the nano-photoetching system of another specific embodiment of the present invention.
Fig. 4 shows the synoptic diagram according to the nano-photoetching system of another specific embodiment of the present invention.
Fig. 5 shows the synoptic diagram of removing the material of coating mistake on the substrate according to the nano-photoetching system of another specific embodiment.
Fig. 6 shows the synoptic diagram according to the nano-photoetching method of a specific embodiment of the present invention.
Embodiment
See also Fig. 2, Fig. 2 shows the synoptic diagram according to the nano-photoetching system 3 of a specific embodiment of the present invention.As shown in Figure 2, nano-photoetching system 3 is in order to coat material on the substrate 4.Nano-photoetching system 3 comprises apparatus for coating 30 and beam condenser 32, and wherein, apparatus for coating 30 further comprises bearing carrier 300 and is arranged at first probe 302 on the bearing carrier 300.The bearing carrier 300 of apparatus for coating 30 can move according to the pattern that the user sets in actual applications, so that contact point 3020 contact substrates 4 of first probe 302 and mobile on substrate 4.Generally speaking, probe with its tip as contact point with contact substrate.
In this specific embodiment, first probe 302 is made of the material of desiring to coat on the substrate.Beam condenser 32 comprises first luminescence unit 320 and first lens 322, wherein, first luminescence unit 320 can send light beam, and light beam can focus on the contact point 3020 of first probe 302 with heating contact point 3020 and material on every side thereof via first lens 322.The light beam that beam condenser 32 is produced in actual applications can be, but be not limited to laser beam.
When beam condenser 32 focuses the light beam in contact point 3020, contact point 3020 with and on every side material will be heated, and, when contact point 3020 with and on every side material when being heated to the fusing point of material, contact point 3020 with and on every side material will present molten state.Then, when presenting contact point 3020 contact substrates 4 of molten state, just material can be coated on the surface of substrate 4.
In this specific embodiment, the contact point 3020 of probe 302 is heated to molten state by light beam focusing earlier and contacts with substrate 4, and then material is coated on the substrate 4.Yet, in actual applications, above-mentioned process sequence also can have difference according to user or deviser's demand, for example, the contact point of probe (tip) can first contact substrate, beam condenser focuses to light beam on the contact point with fusing contact point and material on every side thereof again, and then material is coated on the substrate.
Because the mode that focuses on light beam is the tip of spot heating first probe 302, can avoids on first probe 302, making heating wire and circuit (disclosed) and then simplify the manufacturing process and the cost of first probe 302 as prior art.In addition, because first probe 302 itself is kept solid-state, only tip portion is molten state, so the live width of nano-photoetching system 3 formed structure on substrate 4 of this specific embodiment, and the focused spot size that can be formed by the tip size and the light beam focusing of first probe 302 is determined.
Note that in actual applications beam condenser can send the multiple tracks light beam and focus on a contact point or a plurality of contact point.For example, see also Fig. 3, Fig. 3 shows the synoptic diagram according to the nano-photoetching system 3 of another specific embodiment of the present invention.As shown in Figure 3, this specific embodiment is with a last specific embodiment difference, the beam condenser 32 of this specific embodiment further comprises second luminescence unit 324 and second lens 326, wherein, can see through the contact point 3020 that second lens 326 focus on first probe 302 from second luminescence unit 324 light beam that sends.
In this specific embodiment, the light beam that the light beam that first luminescence unit 320 is sent and second luminescence unit 324 are sent focuses on the contact point 3020 from different directions.In actual applications, the light beam that sent of the light beam that sent of first luminescence unit 320 and second luminescence unit 324 also can focus on diverse location.For example, in another specific embodiment, apparatus for coating 30 also can further comprise second probe, the light beam that first luminescence unit 320 is sent can focus on the tip that light beam that most advanced and sophisticated and second luminescence unit 324 of first probe 302 sent can focus on second probe, with the tip of most advanced and sophisticated and second probe that heats first probe 302 simultaneously.
According to another specific embodiment, beam condenser also can utilize phase-modulator to receive the light beam that luminescence unit sent and adjust its phase place.In addition, phase-modulator also can receive light beam and a plurality of focus points of further formation that luminescence unit sends, and therefore, this specific embodiment only uses a luminescence unit can produce a plurality of focus points.
As mentioned above, method on the tip of a plurality of probes that the multiple tracks light beam is focused on is applicable to the making of large-area element, and it can avoid each probe is made respectively the complicated technology of heating wire and circuit.In addition, apparatus for coating is not limited in the probe mode substrate is coated with, and can other structure carry out, and for example, with planar structure substrate is carried out imprint process.
See also Fig. 4, Fig. 4 shows the synoptic diagram according to the nano-photoetching system 5 of another specific embodiment of the present invention.As shown in Figure 4, nano-photoetching system 5 is in order to coating material on the substrate 6, and comprises apparatus for coating 50 and beam condenser 52.Apparatus for coating 50 further comprises bearing carrier 500 and is arranged at planar structure 502 on the bearing carrier 500, and wherein, planar structure 502 is made of the material of desiring to coat substrate 6, and it comprises focus point 5020.Note that in actual applications decide according to user or deviser's demand the quantity of focus point 5020 and position, is not limited to this specific embodiment.
In this specific embodiment, beam condenser 52 further comprises luminescence unit 520 and lens 522.Luminescence unit 520 can send light beam, and this light beam can focus on the focus point 5020 through lens 522.When light beam (for example, laser beam) focused on the focus point 5020, focus point 5020 and material on every side thereof can be heated, and material can present molten state when focus point 5020 and material on every side thereof are heated to fusing point.Then, apparatus for coating 50 can be stamped into planar structure 502 and cause contact point 5020 contact substrates 6 on the substrate 6, and then material is coated on the substrate 6.
In actual applications, the probe of above-mentioned each specific embodiment or planar structure all can be mixed fluorescein stain in manufacturing process.When light beam focused on the focus point of probe or planar structure, the fluorescein stain in the excitation material caused material to send fluorescence simultaneously.Therefore, when making a mistake as if the coating material process, the user can find and handle mistake early.
In addition, the material that is coated on errors present also can be removed error section by nano-photoetching system of the present invention.See also Fig. 5, Fig. 5 shows the synoptic diagram of removing the material 80 of coating mistake on the substrate 8 according to the nano-photoetching system 7 of another specific embodiment.
As shown in Figure 5, nano-photoetching system 7 has apparatus for coating 70 and beam condenser 72, and apparatus for coating 70 has bearing carrier 700 and is arranged at probe 702 on the bearing carrier 700.In this specific embodiment, the function of each unit of nano-photoetching system 7 is identical haply with the corresponding unit of above-mentioned specific embodiment, does not repeat them here.
Yet with above-mentioned specific embodiment different be in, the light beam that is sent by the beam condenser 72 of this specific embodiment focuses on the material 80 of substrate 8, with the material 80 on the fusing substrate 8.Probe 702 can contact the material 80 that is molten state.Then, the material that is molten state in probe 702 contacts is after 80s, and beam condenser 72 stops light beam and focuses on, and material 80 coolings that present molten state are originally also solidified on probe 702 again.Can take away the material 80 that contacts with probe 702 when afterwards, probe 702 is removed.Thus, the wrong material 80 of coating can be eliminated on the substrate 8.Note that in this specific embodiment substrate 8 can be transparency carrier, so light beam can penetrate substrate 8 and focus on material 80 from substrate 8 back sides.In actual applications, the light beam that beam condenser 72 sent also can not penetrate substrate 8 and directly focus on the material 80.
Please consult Fig. 2 and Fig. 6 simultaneously, Fig. 6 shows the synoptic diagram according to the nano-photoetching method of a specific embodiment of the present invention.Cooperate shown in Figure 2ly as Fig. 6, the nano-photoetching method of this specific embodiment comprises the following step: in step S90, focus the light beam in the contact point 3020 (focus point) on the probe 302, cause contact point 3020 with and on every side material present molten state; In step S92, contact point 3020 contact substrates 4 that will present molten state are to coat material on the substrate 4.Note that in this specific embodiment probe 302 is made of the material of desiring to coat on the substrate 4.
The step of above-mentioned specific embodiment, its order also can be changed mutually.For example, in another specific embodiment, the contact point 3020 of probe 302 can first contact substrate 4, then focuses the light beam in to make contact point 3020 present molten state so that material is coated on the substrate 4 on the contact point 3020 again.
In addition, in the method for above-mentioned specific embodiment, be not limited to probe in order to the structure of coated substrates, but according to user or deviser's demand difference to some extent.For example, applying structure also can be planar structure, light beam focus on planar structure in order on the surface of contact substrate and form one or more focus points, and then fusing focus point and material on every side thereof.Then, planar structure can make the focus point contact substrate so that material is coated on the substrate by the mode of impression.
Than prior art, the invention provides a kind of nano-photoetching system and nano-photoetching method, its mode with focused beam melts the material on the applying structure, and makes the part that presents molten state on the applying structure and substrate contacts so that material is coated on the substrate.Nano-photoetching system of the present invention and nano-photoetching method needn't be provided with heating wire and circuit on applying structures such as probe, and then have reduced the process complexity and the manufacturing cost of probe.Aspect the large tracts of land coating, the present invention can produce a plurality of focal spots simultaneously and be beneficial to the large tracts of land coating on a plurality of probes, or produces a plurality of focal spots and then carry out the large tracts of land coating in the impression mode on the applying structure of plane formula.In addition, but user's Real Time Observation is coated with situation in coating process, and when the coating mistake took place, the user can remove error section easily.
By the detailed description of above preferred specific embodiment, be to wish more clearly to describe feature of the present invention and spirit, and be not to come scope of the present invention is limited by above-mentioned disclosed preferred specific embodiment.On the contrary, its objective is that hope can contain various changes and be equal to substitute mode in claim of the present invention.Therefore, claim of the present invention should be done the broadest explanation according to above-mentioned explanation, to cause it to contain all possible change and to be equal to substitute mode.
The main element symbol description
1,2: lithographic equipment 10,20: probe
12: material 22: heating wire
3,5,7: nano- photoetching system 30,50,70: apparatus for coating
32,52,72: light beam localizing device 300,500,700: bearing carrier
326: the second lens of 324: the second luminescence units
502: planar structure 5020: focus point
520: luminescence unit 522: lens
702: probe 4,6,8: substrate
80: material S90, S92: process step.
Claims (10)
1. nano-photoetching system, in order to material is coated on the substrate, described nano-photoetching system comprises:
Applying structure is made by the described material of solid shape, and described applying structure has contact point in order to contact described substrate; And
Beam condenser is in order to send first light beam and described first light beam is focused on the described contact point of described applying structure.
2. nano-photoetching system according to claim 1, wherein, described applying structure is arranged on the bearing carrier.
3. nano-photoetching system according to claim 2, wherein, described bearing carrier is movably.
4. nano-photoetching system according to claim 1, wherein, described applying structure comprises first probe.
5. nano-photoetching system according to claim 4, wherein, described contact point is first tip of described first probe.
6. nano-photoetching system according to claim 5, wherein, when described first light beam was heated to the fusing point of described material with described first tip, the described substrate of the described first most advanced and sophisticated contact was to coat described material on the described substrate.
7. nano-photoetching system according to claim 4, wherein, described applying structure comprises second probe, and described beam condenser can focus on described first light beam second tip of described second probe.
8. nano-photoetching system according to claim 1, wherein, described applying structure is a planar structure.
9. nano-photoetching method, in order to material is coated on the substrate, described nano-photoetching method comprises the following step:
Focus the light beam on the focus point of the applying structure of making by described material, present molten state until described focus point; And
The described focus point and the described substrate contacts that will present described molten state are to coat described substrate with described material.
10. nano-photoetching method, in order to material is coated on the substrate, described nano-photoetching method comprises the following step:
The focus point and the described substrate contacts of the applying structure that will make by described material; And
Focus the light beam in the contact described substrate described focus point on cause described focus point to present molten state, so that described material is coated described substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910133678A CN101872128A (en) | 2009-04-22 | 2009-04-22 | Nano-photoetching system and nano-photoetching method |
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| CN200910133678A CN101872128A (en) | 2009-04-22 | 2009-04-22 | Nano-photoetching system and nano-photoetching method |
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| CN101872128A true CN101872128A (en) | 2010-10-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105807570A (en) * | 2014-12-31 | 2016-07-27 | 上海微电子装备有限公司 | Self-adaptive trench focusing and leveling device and method thereof |
-
2009
- 2009-04-22 CN CN200910133678A patent/CN101872128A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105807570A (en) * | 2014-12-31 | 2016-07-27 | 上海微电子装备有限公司 | Self-adaptive trench focusing and leveling device and method thereof |
| CN105807570B (en) * | 2014-12-31 | 2018-03-02 | 上海微电子装备（集团）股份有限公司 | The focusing leveling device and its method of adaptive groove |
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Application publication date: 20101027 |