CN101867345A - Integrated inductance capacitance voltage-controlled oscillator for ultra-wideband low-phase noise - Google Patents
Integrated inductance capacitance voltage-controlled oscillator for ultra-wideband low-phase noise Download PDFInfo
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- CN101867345A CN101867345A CN200910081988A CN200910081988A CN101867345A CN 101867345 A CN101867345 A CN 101867345A CN 200910081988 A CN200910081988 A CN 200910081988A CN 200910081988 A CN200910081988 A CN 200910081988A CN 101867345 A CN101867345 A CN 101867345A
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Abstract
The invention discloses an integrated inductance capacitance voltage-controlled oscillator comprises four programmable negative resistance type LC (inductance capacitance) oscillating core circuits, a public output stage and a current amount programmable offset module, wherein the public output stage is connected with the four programmable negative resistance type LC oscillating core circuits; and the current amount programmable offset module is connected with the four programmable negative resistance type LC oscillating core circuits through a controlled switch. Compared with the common voltage-controlled oscillator, the integrated inductance capacitance voltage-controlled oscillator has obvious disadvantages in debugging range, phase noise, and other aspects; and in addition, the invention is specially suitable for a demanding multistandard multiband radio-frequency radio communication system.
Description
Technical field
The invention belongs to wireless communication system radio-frequency front-end (Radio-Frequency Front-End) technical field, particularly be used for the structural design of the voltage controlled oscillator of wireless communication system front end.
Background technology
In recent years, along with the prosperity of wireless communications market, radio frequency integrated circuit (RFIC) was developed rapidly.These wireless applications mainly comprise: mobile phone, global positioning system (GPS), bluetooth (Bluetooth), wireless lan (wlan) and mobile TV etc.In these application systems, radio circuit is the key point of whole receive-transmit system design, so receive much concern for many years.
In entire wireless communication system, the oscillator that voltage controlled oscillator (VCO) changes with the input tuning voltage as a kind of output frequency, be the most basic composition module, be mainly used in the phase-locked loop frequency integrator, can provide down-conversion required local frequency for transmitting and receiving link.As the highest circuit module of operating frequency in the system, its performance at aspects such as tuning range, phase noise and power consumptions directly influences the transmitting-receiving quality of system, so voltage controlled oscillator is a key technology of RFIC design always.
Along with the appearance of various wireless communications application, the radio frequency integrated chip of integrated multiple communications applications has become a kind of inevitable development trend in the single-chip.Require this moment RF Voltage-Controlled Oscillator under the prerequisite that guarantees power consumption and phase noise, obtain wideer frequency coverage, and can carry out the self-defined needs of different applications that is configured to satisfy very easily.This has proposed new challenge to voltage controlled oscillator.As an application example, Digital Television (CMMB, DVB-H), WLAN (wireless local area network) (802.11b) and bluetooth communications applications such as (Bluetooth) are integrated in the same chip, require the frequency range of the continuous 2.75～5.75GHz of covering of tuning range of oscillator, phase noise satisfies under the 1MHz frequency deviation and is lower than-120dBc/Hz, and power consumption is as far as possible little simultaneously.
Present RF Voltage-Controlled Oscillator mainly contains two kinds: ring oscillator and negative resistance type LC oscillator.Ring oscillator is formed by the cascade of a plurality of time delay modules feedback, need not passive components such as inductance, is convenient to integratedly, and can realize very wide tuning range.But its noiseproof feature is poor, has limited its application in radio-frequency (RF) communication system.And based on the LC oscillator of negative resistance principle because himself band-pass filtering property, be fit to very much have the radio-frequency front-end system of low noise requirement.Utilize the capacitance of variable capacitance variable capacitance and inductance formation resonant tank can be obtained voltage controlled oscillator with the characteristic of control voltage change.Because the capacitance that can change in the variable capacitance is limited, the tuning range of voltage controlled oscillator often thereby limited.In order to reach the tuning purpose of wide region, the structure that voltage controlled oscillator can adopt variable capacitance to combine with switched capacitor array.Yet switching capacity too much not only can significantly increase design complexities, and process deviation and too much parasitic benefit also can be offset the benefit that the part switching capacity brings.Too much switching capacity in parallel also can significantly reduce the quality factor in loop on the resonant tank simultaneously, the output phase noise penalty causes vibrating, power consumption increases, and the starting of oscillation time also can prolong, and is difficult to satisfy the requirement of foregoing many standards multiband single-chip integrated system.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is in order to overcome the deficiency of prior art, a kind of integrated inductance capacitance voltage-controlled oscillator of ultra-wideband low-phase noise has been proposed, have when satisfying than the low phase noise index, can satisfy wide tuning range and low index requests such as power consumption simultaneously, be fit to the application of the radio system of integrated multifunction.
(2) technical scheme
For achieving the above object, the invention provides a kind of integrated inductance capacitance voltage-controlled oscillator, comprising:
Four programmable negative resistance type LC vibration core circuits;
A public output stage that is connected with these four programmable negative resistance type LC vibration core circuits; And
The programmable biasing module of size of current, this biasing module is connected in these four programmable negative resistance type LC vibration core circuits by controlled switch.
In the such scheme, these four programmable negative resistance type LC vibration core circuit structures are identical, and each vibration core circuit includes LC resonant tank, negative resistance generator, output circuit and other auxiliary circuit.
In the such scheme, described LC resonant tank by differential inductance L, diode-type variable capacitance to the first electric capacity D1 and the second electric capacity D2, switching capacity is to first capacitor C 1 and second capacitor C 2 and the 3rd capacitor C 3 and the 4th capacitor C 4 formations, its annexation is: the positive pole of the positive pole of the first electric capacity D1, first capacitor C 1, the positive pole of the 3rd capacitor C 3 are connected with the left end of differential inductance L, constitute the left end of resonant tank; The positive pole of the positive pole of the positive pole of the second electric capacity D2, second capacitor C 2, the 4th capacitor C 4 is connected with the right-hand member of differential inductance L, constitutes the right-hand member of resonant tank, the intermediate ends ground connection of differential inductance L; The negative pole of the negative pole of the first electric capacity D1, the second electric capacity D2 is connected with tuning voltage input Vtune; The negative pole of the negative pole of first capacitor C 1, the 3rd capacitor C 3 is connected with the anode of the first diverter switch S1, the second diverter switch S2 respectively, and the negative pole of the negative pole of second capacitor C 2, the 4th capacitor C 4 is connected with the negative terminal of the first diverter switch S1, the second diverter switch S2 respectively.
In the such scheme, half of the coil of described differential inductance L and second half are together interlaced, have a tap to draw from the centre.
In the such scheme, the described first diverter switch S1, the second diverter switch S2 structure is identical, by nmos pipe MN1, the 2nd nmos pipe MN2 and the 3rd nmos pipe MN3 constitute, its annexation is: a nmos manages MN1, the 2nd nmos pipe MN2 is connected with switching controls voltage Vc with the grid of the 3rd nmos pipe MN3, the source ground of the 2nd nmos pipe MN2 and the 3rd nmos pipe MN3, the drain electrode of the 2nd nmos pipe MN2 is connected with the drain electrode of nmos pipe MN1, the source electrode of the drain electrode of the 3rd nmos pipe MN3 and nmos pipe MN1 is connected, and the drain electrode of nmos pipe MN1 and source electrode are respectively to the anode (+) and the negative terminal (-) of inductive switch.
In the such scheme, described negative resistance generator is made of pmos pipe MP1 and the 2nd pmos pipe MP2, the drain electrode of the one pmos pipe MP1 is connected with the resonant tank left end with the grid of the 2nd pmos pipe MP2, the drain electrode of the 2nd pmos pipe MP2 is connected with the resonant tank right-hand member with the grid of pmos pipe MP1, and pmos pipe MP1 is connected with the negative terminal of cmos switch K with the source electrode of the 2nd pmos pipe MP2.
In the such scheme, described output circuit is by the 5th capacitor C 5 and the 6th capacitor C 6, the 0th triode Q0, the first triode Q1 and the second triode Q2 and resistance R E0 constitute, the left end signal of described LC resonant tank is coupled to the base stage of the first triode Q1 by the 5th capacitor C 5, the right-hand member signal of described LC resonant tank is coupled to the base stage of the second triode Q2 by the 6th capacitor C 6, and the first triode Q1 and the second triode Q2 constitute differential pair; The collector electrode of the first triode Q1 and the second triode Q2 connects the public output stage of back, emitter is connected with the collector electrode of the 0th triode Q0, the emitter of the 0th triode Q0 is by resistance R E0 ground connection, and the base stage of the 0th triode Q0 meets external bias voltage Vbias.
In the such scheme, described biasing module comprises a reference source and mirror image circuit two parts; Mirror image circuit is by the 0th pmos pipe M0, pmos pipe M1, the 2nd pmos pipe M2 and the 3rd pmos pipe M3, and the first cmos switch K1, the second cmos switch K2 and the 3rd cmos switch K3 formation; Its annexation is: the 0th pmos manages M0, the one pmos manages M1, the 2nd pmos pipe M2 is connected with power supply VCC with the source electrode of the 3rd pmos pipe M3, the grid of the 0th pmos pipe M0 is connected with a reference source output with drain electrode, the one pmos manages M1, the grid of the 2nd pmos pipe M2 and the 3rd pmos pipe M3 is connected with the grid of the 0th pmos pipe M0, the one pmos manages M1, the drain electrode of the 2nd pmos pipe M2 and the 3rd pmos pipe M3 respectively with the first cmos switch K1, the anode of the second cmos switch K2 and the 3rd cmos switch K3 is connected, the first cmos switch K1, the negative terminal of the second cmos switch K2 and the 3rd cmos switch K3 is connected with the output of bias current Is; The size of the one pmos pipe M1, the 2nd pmos pipe M2 and the 3rd pmos pipe M3 doubles successively, to the also multiplication successively of image current of the 0th pmos pipe M0.
In the such scheme, described a reference source is by the 00 triode Q00, the 01 triode Q01 and the 02 triode Q02, zero resistance R0, first resistance R 1, the 3rd resistance R E1 and the 4th resistance R E2, and capacitor C and diode D constitute; Its annexation is: the base stage of the 00 triode Q00 is connected with power supply VCC by zero resistance R0 with the collector electrode of the 01 triode Q01, the collector electrode of the 00 triode Q00 is connected with power supply VCC, the emitter of the 01 triode Q01 is connected with the anode of diode D, and the negative terminal of diode D is connected with ground by the 3rd resistance R E1; The emitter of the 00 triode Q00 is connected with the base stage of the 02 triode Q02 by first resistance R 1 with the base stage of the 01 triode Q01; The emitter of the 02 triode Q02 is connected with ground by the 4th resistance R E2, and the collector electrode of the 02 triode Q02 is connected with the reference current output; Capacitor C is connected between the base stage and ground of the 02 triode Q02.
In the such scheme, described output stage is by the tenth triode Q10 and the 11 triode Q11, and the 0th induction electronics resistance R L0 and first responds to electronics resistance R L1, and a push-pull output circuit constitutes; Its annexation is: the emitter of the tenth triode Q10 and the 11 triode Q11 is connected with input Vin, and the collector electrode of the tenth triode Q10 and the 11 triode Q11 is connected with power supply VCC with the first induction electronics resistance R L1 by the 0th induction electronics resistance R L0 respectively; The input of push-pull output circuit is connected with the collector electrode of the tenth triode Q10 and the 11 triode Q11 respectively.
In the such scheme, described push-pull output circuit is by the 3rd triode Q3, the 4th triode Q4, the 5th triode Q5, the 6th triode Q6, the 7th triode Q7, the 8th triode Q8, the 9th triode Q9, the 12 triode Q12 and the 13 triode Q13, and the 5th resistance R E3, the 6th resistance R E4 and the 7th resistance R E5 constitute; Its annexation is: the base stage of the 6th triode Q6 and the 12 triode Q12 is connected with the collector electrode of the tenth triode Q10 in the output stage, the collector electrode of the 6th triode Q6 and the 12 triode Q12 is connected with power supply VCC, and the collector electrode of the emitter of the 6th triode Q6 and the 3rd triode Q3 is connected with the base stage of the 9th triode Q9; In like manner, in another road of difference channel, the base stage of the 7th triode Q7 and the 13 triode Q13 is connected with the collector electrode of the 11 triode Q11 in the output stage, the collector electrode of the 7th triode Q7 and the 13 triode Q13 is connected with power supply VCC, and the collector electrode of the emitter of the 7th triode Q7 and the 4th triode Q4 is connected with the base stage of the 8th triode Q8; The emitter of the 8th triode Q8 and the 9th triode Q9 is connected with the collector electrode of the 5th triode Q5; The base stage of Q3, Q4 and Q5 is connected with bias voltage Vias, and the emitter of the 3rd triode Q3, the 4th triode Q4 and the 5th triode Q5 is connected with ground with the 7th resistance R E5 by resistance the 5th resistance R E3, the 6th resistance R E4 respectively; The collector electrode of the 8th triode Q8 and the 9th triode Q9 is connected with the emitter of the 12 triode Q12 and the 13 triode Q13 respectively, is connected with two outputs again.
(3) beneficial effect
The design of this improved integrated inductance capacitance voltage-controlled oscillator of the present invention is compared with common design has following distinguishing feature:
1, oscillation module comprises four vibration cores, and each vibration core can obtain four tuning frequency ranges, can obtain very wide tuning range, and can choose at random by controlled switch is set.
2, biasing module has adopted programmable mirror image circuit, can carry out the equal difference programming Control to the output offset size of current.
3, a reference source has adopted low noise structure, can reduce bias current to the oscillation phase The noise.
4, adopted in the output stage and recommended (Push-Pull) output circuit, improved the driving force of output.
Description of drawings
Fig. 1 is the structural representation of integrated inductance capacitance voltage-controlled oscillator provided by the invention.
Fig. 2 is the topological schematic diagram of vibration core circuit.
Fig. 3 is the topological schematic diagram of a reference source.
Fig. 4 is the topological schematic diagram of output stage.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, the integrated inductance capacitance voltage-controlled oscillator that the present invention proposes comprises: four programmable negative resistance type LC vibration core circuits, a public output stage that is connected with these four programmable negative resistance type LC vibration core circuits; And the programmable biasing module of size of current, this biasing module is connected in these four programmable negative resistance type LC vibration core circuits by controlled switch.
These four programmable negative resistance type LC vibration core circuit structures are identical, and as shown in Figure 2, each vibration core circuit includes LC resonant tank, negative resistance generator, output circuit and other auxiliary circuit.
Described LC resonant tank by differential inductance L, diode-type variable capacitance to the first electric capacity D1 and the second electric capacity D2, switching capacity is to first capacitor C 1 and second capacitor C 2 and the 3rd capacitor C 3 and the 4th capacitor C 4 formations, its annexation is: the positive pole of the positive pole of the first electric capacity D1, first capacitor C 1, the positive pole of the 3rd capacitor C 3 are connected with the left end of differential inductance L, constitute the left end of resonant tank; The positive pole of the positive pole of the positive pole of the second electric capacity D2, second capacitor C 2, the 4th capacitor C 4 is connected with the right-hand member of differential inductance L, constitutes the right-hand member of resonant tank, the intermediate ends ground connection of differential inductance L; The negative pole of the negative pole of the first electric capacity D1, the second electric capacity D2 is connected with tuning voltage input Vtune; The negative pole of the negative pole of first capacitor C 1, the 3rd capacitor C 3 is connected with the anode of the first diverter switch S1, the second diverter switch S2 respectively, and the negative pole of the negative pole of second capacitor C 2, the 4th capacitor C 4 is connected with the negative terminal of the first diverter switch S1, the second diverter switch S2 respectively.
Half of the coil of differential inductance L and second half are together interlaced, have a tap to draw from the centre.The first diverter switch S1, the second diverter switch S2 structure is identical, by nmos pipe MN1, the 2nd nmos pipe MN2 and the 3rd nmos pipe MN3 constitute, its annexation is: a nmos manages MN1, the 2nd nmos pipe MN2 is connected with switching controls voltage Vc with the grid of the 3rd nmos pipe MN3, the source ground of the 2nd nmos pipe MN2 and the 3rd nmos pipe MN3, the drain electrode of the 2nd nmos pipe MN2 is connected with the drain electrode of nmos pipe MN1, the source electrode of the drain electrode of the 3rd nmos pipe MN3 and nmos pipe MN1 is connected, and the drain electrode of nmos pipe MN1 and source electrode are respectively to the anode (+) and the negative terminal (-) of inductive switch.
The negative resistance generator is made of pmos pipe MP1 and the 2nd pmos pipe MP2, the drain electrode of the one pmos pipe MP1 is connected with the resonant tank left end with the grid of the 2nd pmos pipe MP2, the drain electrode of the 2nd pmos pipe MP2 is connected with the resonant tank right-hand member with the grid of pmos pipe MP1, and pmos pipe MP1 is connected with the negative terminal of cmos switch K with the source electrode of the 2nd pmos pipe MP2.
Output circuit is by the 5th capacitor C 5 and the 6th capacitor C 6, the 0th triode Q0, the first triode Q1 and the second triode Q2 and resistance R E0 constitute, the left end signal of described LC resonant tank is coupled to the base stage of the first triode Q1 by the 5th capacitor C 5, the right-hand member signal of described LC resonant tank is coupled to the base stage of the second triode Q2 by the 6th capacitor C 6, and the first triode Q1 and the second triode Q2 constitute differential pair; The collector electrode of the first triode Q1 and the second triode Q2 connects the public output stage of back, emitter is connected with the collector electrode of the 0th triode Q0, the emitter of the 0th triode Q0 is by resistance R E0 ground connection, and the base stage of the 0th triode Q0 meets external bias voltage Vbias.
What LC vibration core circuit adopted is negative resistance type LC oscillator structure, and wherein, pmos pipe MP1 and the 2nd pmos pipe MP2 intersection are connected to form the negative resistance generator; Differential inductance L, the diode-type variable capacitance is to the first electric capacity D1 and the second electric capacity D2, switching capacity constitutes resonant tank to first capacitor C 1, second capacitor C 2 and the 3rd capacitor C 3, the 4th capacitor C 4, be used to generate oscillator signal, the capacitance of the 3rd capacitor C 3, the 4th capacitor C 4 is the twice of first capacitor C 1, second capacitor C 2; The first diverter switch S1, the second diverter switch S2 implement to switch to the conducting of switching capacity; Cmos switch carries out break-make control to bias current Is; Zero capacitance C0 carries out filtering to bias current; It is right that the 5th capacitor C 5, the 6th capacitor C 6 are coupled to difference output with oscillator signal.The 0th triode Q0, the first triode Q1, the second triode Q2 and resistance R E0 constitute difference output to oscillator signal is exported.Different with common voltage controlled oscillator is, differential inductance has improved the quality factor in loop and reduced chip area, and two groups of switching capacities make the vibration core circuit that four continuously adjustable tuning frequency ranges be arranged.
Biasing module comprises a reference source and mirror image circuit two parts.Mirror image circuit is by the 0th pmos pipe M0, pmos pipe M1, the 2nd pmos pipe M2 and the 3rd pmos pipe M3, and the first cmos switch K1, the second cmos switch K2 and the 3rd cmos switch K3 formation; Its annexation is: the 0th pmos manages M0, the one pmos manages M1, the 2nd pmos pipe M2 is connected with power supply VCC with the source electrode of the 3rd pmos pipe M3, the grid of the 0th pmos pipe M0 is connected with a reference source output with drain electrode, the one pmos manages M1, the grid of the 2nd pmos pipe M2 and the 3rd pmos pipe M3 is connected with the grid of the 0th pmos pipe M0, the one pmos manages M1, the drain electrode of the 2nd pmos pipe M2 and the 3rd pmos pipe M3 respectively with the first cmos switch K1, the anode of the second cmos switch K2 and the 3rd cmos switch K3 is connected, the first cmos switch K1, the negative terminal of the second cmos switch K2 and the 3rd cmos switch K3 is connected with the output of bias current Is; The size of the one pmos pipe M1, the 2nd pmos pipe M2 and the 3rd pmos pipe M3 doubles successively, to the also multiplication successively of image current of the 0th pmos pipe M0.
A reference source is by the 00 triode Q00, the 01 triode Q01 and the 02 triode Q02, zero resistance R0, first resistance R 1, the 3rd resistance R E1 and the 4th resistance R E2, and capacitor C and diode D constitute; Its annexation is: the base stage of the 00 triode Q00 is connected with power supply VCC by zero resistance R0 with the collector electrode of the 01 triode Q01, the collector electrode of the 00 triode Q00 is connected with power supply VCC, the emitter of the 01 triode Q01 is connected with the anode of diode D, and the negative terminal of diode D is connected with ground by the 3rd resistance R E1; The emitter of the 00 triode Q00 is connected with the base stage of the 02 triode Q02 by first resistance R 1 with the base stage of the 01 triode Q01; The emitter of the 02 triode Q02 is connected with ground by the 4th resistance R E2, and the collector electrode of the 02 triode Q02 is connected with the reference current output; Capacitor C is connected between the base stage and ground of the 02 triode Q02.
Resistance R 0 produces initial current I0 in a reference source, and diode D carries out temperature-compensating to electric current I 0, and triode Q00, Q01, Q02 and resistance R E1, RE2 constitute current mirror the I0 mirror image is obtained reference current output Iout.Pmos pipe M1, M2 and M3 obtain three image currents that are in proportion and concern respectively to the M0 mirror image in the mirror image circuit, and the output offset electric current is obtained by these three image currents programmings.The used a reference source of the present invention has guaranteed that the noise in the bias current is lower, and three programmable image currents are controlled the big I of bias current flexibly, to satisfy the needs of different operating state.
Output stage is by the tenth triode Q10 and the 11 triode Q11, and the 0th induction electronics resistance R L0 and first responds to electronics resistance R L1, and a push-pull output circuit constitutes; Its annexation is: the emitter of the tenth triode Q10 and the 11 triode Q11 is connected with input Vin, and the collector electrode of the tenth triode Q10 and the 11 triode Q11 is connected with power supply VCC with the first induction electronics resistance R L1 by the 0th induction electronics resistance R L0 respectively; The input of push-pull output circuit is connected with the collector electrode of the tenth triode Q10 and the 11 triode Q11 respectively.
Push-pull output circuit is by the 3rd triode Q3, the 4th triode Q4, the 5th triode Q5, the 6th triode Q6, the 7th triode Q7, the 8th triode Q8, the 9th triode Q9, the 12 triode Q12 and the 13 triode Q13, and the 5th resistance R E3, the 6th resistance R E4 and the 7th resistance R E5 constitute; Its annexation is: the base stage of the 6th triode Q6 and the 12 triode Q12 is connected with the collector electrode of the tenth triode Q10 in the output stage, the collector electrode of the 6th triode Q6 and the 12 triode Q12 is connected with power supply VCC, and the collector electrode of the emitter of the 6th triode Q6 and the 3rd triode Q3 is connected with the base stage of the 9th triode Q9; In like manner, in another road of difference channel, the base stage of the 7th triode Q7 and the 13 triode Q13 is connected with the collector electrode of the 11 triode Q11 in the output stage, the collector electrode of the 7th triode Q7 and the 13 triode Q13 is connected with power supply VCC, and the collector electrode of the emitter of the 7th triode Q7 and the 4th triode Q4 is connected with the base stage of the 8th triode Q8; The emitter of the 8th triode Q8 and the 9th triode Q9 is connected with the collector electrode of the 5th triode Q5; The base stage of Q3, Q4 and Q5 is connected with bias voltage Vias, and the emitter of the 3rd triode Q3, the 4th triode Q4 and the 5th triode Q5 is connected with ground with the 7th resistance R E5 by resistance the 5th resistance R E3, the 6th resistance R E4 respectively; The collector electrode of the 8th triode Q8 and the 9th triode Q9 is connected with the emitter of the 12 triode Q12 and the 13 triode Q13 respectively, is connected with two outputs again.
Q10, RL0 and Q11, RL1 constitute cascode amplifier with the Q1 and the Q2 of prime vibration core circuit output respectively in the output stage, not only obtain very high gain amplifier, and the frequency response under the high frequency is also good than other amplifying circuit.Oscillator signal after the amplification is recommended (Push-Pull) output circuit through one and is finally exported.In the push-pull output circuit because each output all has a big electric current of drawing that pushes away electric current and end of oppisite phase that load is driven, even therefore when load is heavier voltage controlled oscillator of the present invention still can well work.
By each size of devices size correctly is set, and add suitable biasing circuit, voltage controlled oscillator of the present invention can realize that tuning range covers continuously the ultratvide frequency band of 2.75～5.75GHz, reaches the output phase noise simultaneously to be lower than under the 1MHz frequency deviation-index request of 120dBc/Hz.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. an integrated inductance capacitance voltage-controlled oscillator is characterized in that, comprising:
Four programmable negative resistance type LC vibration core circuits;
A public output stage that is connected with these four programmable negative resistance type LC vibration core circuits; And
The programmable biasing module of size of current, this biasing module is connected in these four programmable negative resistance type LC vibration core circuits by controlled switch.
2. integrated inductance capacitance voltage-controlled oscillator according to claim 1, it is characterized in that, these four programmable negative resistance type LC vibration core circuit structures are identical, and each vibration core circuit includes LC resonant tank, negative resistance generator, output circuit and other auxiliary circuit.
3. integrated inductance capacitance voltage-controlled oscillator according to claim 2, it is characterized in that, described LC resonant tank by differential inductance L, diode-type variable capacitance to the first electric capacity D1 and the second electric capacity D2, switching capacity is to first capacitor C 1 and second capacitor C 2 and the 3rd capacitor C 3 and the 4th capacitor C 4 formations, its annexation is: the positive pole of the positive pole of the first electric capacity D1, first capacitor C 1, the positive pole of the 3rd capacitor C 3 are connected with the left end of differential inductance L, constitute the left end of resonant tank; The positive pole of the positive pole of the positive pole of the second electric capacity D2, second capacitor C 2, the 4th capacitor C 4 is connected with the right-hand member of differential inductance L, constitutes the right-hand member of resonant tank, the intermediate ends ground connection of differential inductance L; The negative pole of the negative pole of the first electric capacity D1, the second electric capacity D2 is connected with tuning voltage input Vtune; The negative pole of the negative pole of first capacitor C 1, the 3rd capacitor C 3 is connected with the anode of the first diverter switch S1, the second diverter switch S2 respectively, and the negative pole of the negative pole of second capacitor C 2, the 4th capacitor C 4 is connected with the negative terminal of the first diverter switch S1, the second diverter switch S2 respectively.
4. integrated inductance capacitance voltage-controlled oscillator according to claim 3 is characterized in that, half of the coil of described differential inductance L and second half are together interlaced, have a tap to draw from the centre.
5. integrated inductance capacitance voltage-controlled oscillator according to claim 3, it is characterized in that, the described first diverter switch S1, the second diverter switch S2 structure is identical, by nmos pipe MN1, the 2nd nmos pipe MN2 and the 3rd nmos pipe MN3 constitute, its annexation is: a nmos manages MN1, the 2nd nmos pipe MN2 is connected with switching controls voltage Vc with the grid of the 3rd nmos pipe MN3, the source ground of the 2nd nmos pipe MN2 and the 3rd nmos pipe MN3, the drain electrode of the 2nd nmos pipe MN2 is connected with the drain electrode of nmos pipe MN1, the source electrode of the drain electrode of the 3rd nmos pipe MN3 and nmos pipe MN1 is connected, and the drain electrode of nmos pipe MN1 and source electrode are respectively to the anode (+) and the negative terminal (-) of inductive switch.
6. integrated inductance capacitance voltage-controlled oscillator according to claim 2, it is characterized in that, described negative resistance generator is made of pmos pipe MP1 and the 2nd pmos pipe MP2, the drain electrode of the one pmos pipe MP1 is connected with the resonant tank left end with the grid of the 2nd pmos pipe MP2, the drain electrode of the 2nd pmos pipe MP2 is connected with the resonant tank right-hand member with the grid of pmos pipe MP1, and pmos pipe MP1 is connected with the negative terminal of cmos switch K with the source electrode of the 2nd pmos pipe MP2.
7. integrated inductance capacitance voltage-controlled oscillator according to claim 2, it is characterized in that, described output circuit is by the 5th capacitor C 5 and the 6th capacitor C 6, the 0th triode Q0, the first triode Q1 and the second triode Q2 and resistance R E0 constitute, the left end signal of described LC resonant tank is coupled to the base stage of the first triode Q 1 by the 5th capacitor C 5, the right-hand member signal of described LC resonant tank is coupled to the base stage of the second triode Q2 by the 6th capacitor C 6, and the first triode Q1 and the second triode Q2 constitute differential pair; The collector electrode of the first triode Q1 and the second triode Q2 connects the public output stage of back, emitter is connected with the collector electrode of the 0th triode Q0, the emitter of the 0th triode Q0 is by resistance R E0 ground connection, and the base stage of the 0th triode Q0 meets external bias voltage Vbias.
8. integrated inductance capacitance voltage-controlled oscillator according to claim 1 is characterized in that, described biasing module comprises a reference source and mirror image circuit two parts; Mirror image circuit is by the 0th pmos pipe M0, pmos pipe M1, the 2nd pmos pipe M2 and the 3rd pmos pipe M3, and the first cmos switch K1, the second cmos switch K2 and the 3rd cmos switch K3 formation; Its annexation is: the 0th pmos manages M0, the one pmos manages M1, the 2nd pmos pipe M2 is connected with power supply VCC with the source electrode of the 3rd pmos pipe M3, the grid of the 0th pmos pipe M0 is connected with a reference source output with drain electrode, the one pmos manages M1, the grid of the 2nd pmos pipe M2 and the 3rd pmos pipe M3 is connected with the grid of the 0th pmos pipe M0, the one pmos manages M1, the drain electrode of the 2nd pmos pipe M2 and the 3rd pmos pipe M3 respectively with the first cmos switch K1, the anode of the second cmos switch K2 and the 3rd cmos switch K3 is connected, the first cmos switch K1, the negative terminal of the second cmos switch K2 and the 3rd cmos switch K3 is connected with the output of bias current Is; The size of the one pmos pipe M1, the 2nd pmos pipe M2 and the 3rd pmos pipe M3 doubles successively, to the also multiplication successively of image current of the 0th pmos pipe M0.
9. integrated inductance capacitance voltage-controlled oscillator according to claim 8, it is characterized in that, described a reference source is by the 00 triode Q00, the 01 triode Q01 and the 02 triode Q02, zero resistance R0, first resistance R 1, the 3rd resistance R E1 and the 4th resistance R E2, capacitor C and diode D constitute; Its annexation is: the base stage of the 00 triode Q00 is connected with power supply VCC by zero resistance R0 with the collector electrode of the 01 triode Q01, the collector electrode of the 00 triode Q00 is connected with power supply VCC, the emitter of the 01 triode Q01 is connected with the anode of diode D, and the negative terminal of diode D is connected with ground by the 3rd resistance R E1; The emitter of the 00 triode Q00 is connected with the base stage of the 02 triode Q02 by first resistance R 1 with the base stage of the 01 triode Q01; The emitter of the 02 triode Q02 is connected with ground by the 4th resistance R E2, and the collector electrode of the 02 triode Q02 is connected with the reference current output; Capacitor C is connected between the base stage and ground of the 02 triode Q02.
10. integrated inductance capacitance voltage-controlled oscillator according to claim 1, it is characterized in that, described output stage is by the tenth triode Q10 and the 11 triode Q11, and the 0th induction electronics resistance R L0 and first responds to electronics resistance R L1, and a push-pull output circuit constitutes; Its annexation is: the emitter of the tenth triode Q10 and the 11 triode Q11 is connected with input Vin, and the collector electrode of the tenth triode Q10 and the 11 triode Q11 is connected with power supply VCC with the first induction electronics resistance R L1 by the 0th induction electronics resistance R L0 respectively; The input of push-pull output circuit is connected with the collector electrode of the tenth triode Q10 and the 11 triode Q11 respectively.
11. integrated inductance capacitance voltage-controlled oscillator according to claim 10, it is characterized in that, described push-pull output circuit is by the 3rd triode Q3, the 4th triode Q4, the 5th triode Q5, the 6th triode Q6, the 7th triode Q7, the 8th triode Q8, the 9th triode Q9, the 12 triode Q12 and the 13 triode Q13, and the 5th resistance R E3, the 6th resistance R E4 and the 7th resistance R E5 constitute; Its annexation is: the base stage of the 6th triode Q6 and the 12 triode Q12 is connected with the collector electrode of the tenth triode Q10 in the output stage, the collector electrode of the 6th triode Q6 and the 12 triode Q12 is connected with power supply VCC, and the collector electrode of the emitter of the 6th triode Q6 and the 3rd triode Q3 is connected with the base stage of the 9th triode Q9; In like manner, in another road of difference channel, the base stage of the 7th triode Q7 and the 13 triode Q13 is connected with the collector electrode of the 11 triode Q11 in the output stage, the collector electrode of the 7th triode Q7 and the 13 triode Q13 is connected with power supply VCC, and the collector electrode of the emitter of the 7th triode Q7 and the 4th triode Q4 is connected with the base stage of the 8th triode Q8; The emitter of the 8th triode Q8 and the 9th triode Q9 is connected with the collector electrode of the 5th triode Q5; The base stage of Q3, Q4 and Q5 is connected with bias voltage Vias, and the emitter of the 3rd triode Q3, the 4th triode Q4 and the 5th triode Q5 is connected with ground with the 7th resistance R E5 by resistance the 5th resistance R E3, the 6th resistance R E4 respectively; The collector electrode of the 8th triode Q8 and the 9th triode Q9 is connected with the emitter of the 12 triode Q12 and the 13 triode Q13 respectively, is connected with two outputs again.
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| CN200910081988A CN101867345A (en) | 2009-04-15 | 2009-04-15 | Integrated inductance capacitance voltage-controlled oscillator for ultra-wideband low-phase noise |
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| CN200910081988A CN101867345A (en) | 2009-04-15 | 2009-04-15 | Integrated inductance capacitance voltage-controlled oscillator for ultra-wideband low-phase noise |
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| CN101867345A true CN101867345A (en) | 2010-10-20 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103066921A (en) * | 2012-12-21 | 2013-04-24 | 清华大学深圳研究生院 | Voltage-controlled oscillator with feedback and circuit provided with the same |
| CN103209517A (en) * | 2012-01-11 | 2013-07-17 | 三星电子株式会社 | Apparatus And Method For Compensating For Current Deviation |
| CN104485950A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Low-phase-noise inductance-capacitance voltage-controlled oscillator |
| CN103107773B (en) * | 2012-12-21 | 2015-07-08 | 清华大学深圳研究生院 | Voltage controlled oscillator and circuit with low flicker noise |
| US9425737B1 (en) | 2015-03-16 | 2016-08-23 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| CN112436837A (en) * | 2020-11-11 | 2021-03-02 | 华南理工大学 | Multi-mode voltage-controlled oscillation device and wireless transceiver |
| CN113114121A (en) * | 2021-04-26 | 2021-07-13 | 广东工业大学 | Bias circuit for radio frequency power amplifier |
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- 2009-04-15 CN CN200910081988A patent/CN101867345A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103209517A (en) * | 2012-01-11 | 2013-07-17 | 三星电子株式会社 | Apparatus And Method For Compensating For Current Deviation |
| CN103066921A (en) * | 2012-12-21 | 2013-04-24 | 清华大学深圳研究生院 | Voltage-controlled oscillator with feedback and circuit provided with the same |
| CN103066921B (en) * | 2012-12-21 | 2015-05-20 | 清华大学深圳研究生院 | Voltage-controlled oscillator with feedback and circuit provided with the same |
| CN103107773B (en) * | 2012-12-21 | 2015-07-08 | 清华大学深圳研究生院 | Voltage controlled oscillator and circuit with low flicker noise |
| CN104485950A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Low-phase-noise inductance-capacitance voltage-controlled oscillator |
| WO2016146066A1 (en) * | 2015-03-16 | 2016-09-22 | Huawei Technologies Co., Ltd. | Tapped inductor voltage controlled oscillator |
| US9425737B1 (en) | 2015-03-16 | 2016-08-23 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| US9793855B2 (en) | 2015-03-16 | 2017-10-17 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| US20180034412A1 (en) | 2015-03-16 | 2018-02-01 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| US10411647B2 (en) | 2015-03-16 | 2019-09-10 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| US11190134B2 (en) | 2015-03-16 | 2021-11-30 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| US11632080B2 (en) | 2015-03-16 | 2023-04-18 | Futurewei Technologies, Inc. | Tapped inductor voltage controlled oscillator |
| CN112436837A (en) * | 2020-11-11 | 2021-03-02 | 华南理工大学 | Multi-mode voltage-controlled oscillation device and wireless transceiver |
| CN112436837B (en) * | 2020-11-11 | 2023-06-16 | 华南理工大学 | Multimode voltage-controlled oscillation device and wireless transceiver |
| CN113114121A (en) * | 2021-04-26 | 2021-07-13 | 广东工业大学 | Bias circuit for radio frequency power amplifier |
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Application publication date: 20101020 |