CN101865943A - Method and structure for detecting current of on-chip metal oxide semiconductor field effect transistor (MOSFET) and switching power supply - Google Patents
Method and structure for detecting current of on-chip metal oxide semiconductor field effect transistor (MOSFET) and switching power supply Download PDFInfo
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- CN101865943A CN101865943A CN201010186655A CN201010186655A CN101865943A CN 101865943 A CN101865943 A CN 101865943A CN 201010186655 A CN201010186655 A CN 201010186655A CN 201010186655 A CN201010186655 A CN 201010186655A CN 101865943 A CN101865943 A CN 101865943A
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- oxide semiconductor
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Abstract
The invention provides a method and a structure for detecting current of an on-chip metal oxide semiconductor field effect transistor (MOSFET) and a switching power supply to improve detection accuracy. The method comprises the following steps: collecting the current of the MOSFET to be detected; and adopting the on-chip MOSFET detecting structure to reduce the collected current by more than three levels to acquire the detection current. The structure comprises a current collecting module and an on-chip MOSFET detecting module, wherein the current acquiring module is used for collecting the current of the MOSFET to be detected; and the on-chip MOSFET detecting module is used for reducing the current collected by the current collecting module by more than three levels to acquire the detection current.
Description
Technical field
The present invention relates to integrated circuit fields, relate in particular to on-chip metal oxide semiconductor field effect (MOS) tube current detection method, structure and Switching Power Supply.
Background technology
In detecting structures such as AC-DC variator and DC-DC transducer, during the electric current of power tube, adopted following two kinds of schemes usually in the past:
The one, adopt the resistance detection scheme, detect electric current by resistance in series on power tube, the precision of this scheme can meet the demands usually, but because electric current generally is a milliampere level electric current, and therefore this scheme can produce very big power consumption, causes system effectiveness to reduce;
The 2nd, adopt the inductance detection scheme, this scheme has increased design difficulty, and because the inductance value precision of inductance is not enough, makes that the testing result precision is lower.
For avoiding the problems referred to above, along with technical development, power tube is built in the variator such as DC-DC usually, therefore can realize the detection of power tube current by detection architecture on sheet, but come the scheme of testing circuit to have the low problem of accuracy of detection usually by detection architecture on the sheet at present.
Summary of the invention
The invention provides metal-oxide-semiconductor electric current detecting method, structure and Switching Power Supply on the sheet, to improve accuracy of detection.
Go up the metal-oxide-semiconductor electric current detecting method, comprise step: the electric current of gathering metal-oxide-semiconductor to be detected for provided by the invention; Adopt metal-oxide-semiconductor detection architecture on the sheet, the electric current that collects is carried out dwindling more than three grades, obtain to detect electric current.
Go up the metal-oxide-semiconductor electric current detecting structure, comprising for provided by the invention: the current acquisition module is used to gather the electric current of metal-oxide-semiconductor to be detected; Metal-oxide-semiconductor detection module on the sheet is used for the electric current of current acquisition module collection is carried out dwindling more than three grades, obtains to detect electric current.
Switching Power Supply provided by the invention, built-in metal-oxide-semiconductor to be detected comprises metal-oxide-semiconductor electric current detecting structure on the sheet, this detection architecture specifically comprises: the current acquisition module is used to gather the electric current of metal-oxide-semiconductor to be detected; Metal-oxide-semiconductor detection module on the sheet is used for the electric current of current acquisition module collection is carried out dwindling more than three grades, obtains to detect electric current.
Such scheme provided by the invention is at first gathered the electric current of metal-oxide-semiconductor to be detected, then this electric current is carried out dwindling more than three grades, obtains to detect electric current, thereby the current value that detects current ratio metal-oxide-semiconductor electric current to be detected will be hanged down more than three grades, makes accuracy of detection improve.
Description of drawings
Fig. 1 is the particular circuit configurations synoptic diagram of the embodiment of the invention;
Fig. 2 is the detected electric current I of the embodiment of the invention
SenseWith the electric current I that flows through power tube
LOscillogram.
Embodiment
The prior art accuracy of detection is low, if by metal-oxide-semiconductor electric current to be detected is carried out dwindling more than three grades, obtains to detect electric current, and then its precision will increase substantially.Based on this thinking, the detection method that present embodiment provides is as follows:
Step 1 is gathered the electric current of metal-oxide-semiconductor to be detected;
Step 2 adopts metal-oxide-semiconductor detection architecture on the sheet, and the electric current that collects is carried out dwindling more than three grades, obtains to detect electric current.
In addition because the opening and closing of metal-oxide-semiconductor to be detected are to determine according to frequency of operation, frequency is high more, its opening and closing are frequent more, when metal-oxide-semiconductor to be detected is closed, for preventing to close on the sheet detection architecture may make that follow-up metal-oxide-semiconductor to be detected is opened the time, detection architecture is opened the power consumption and the open-interval problem of being wasted again on the sheet, in the scheme of present embodiment, when described metal-oxide-semiconductor to be detected is closed, the metal-oxide-semiconductor detection architecture is opened on the retention tab, thereby reduce power consumption and improve detection speed with avoiding opening again, especially under high frequency situations, this advantage is more obvious.Preferable, above-mentioned metal-oxide-semiconductor to be detected can be power tube.
Present embodiment also provides metal-oxide-semiconductor electric current detecting structure on the sheet, comprising: the current acquisition module is used to gather the electric current of metal-oxide-semiconductor to be detected; Metal-oxide-semiconductor detection module on the sheet is used for the electric current of current acquisition module collection is carried out dwindling more than three grades, obtains to detect electric current.Wherein preferable, when described metal-oxide-semiconductor to be detected was closed, the metal-oxide-semiconductor detection architecture was opened on the retention tab, to reduce power consumption and to improve detection speed; Preferable, metal-oxide-semiconductor to be detected can be power tube.
Present embodiment also provides the pass power supply, and built-in metal-oxide-semiconductor to be detected comprises metal-oxide-semiconductor electric current detecting structure on the sheet, and this detection architecture specifically comprises: the current acquisition module is used to gather the electric current of metal-oxide-semiconductor to be detected; Metal-oxide-semiconductor detection module on the sheet is used for the electric current of current acquisition module collection is carried out dwindling more than three grades, obtains to detect electric current.Wherein preferable, when described metal-oxide-semiconductor to be detected was closed, the metal-oxide-semiconductor detection architecture was opened on the retention tab, to reduce power consumption and to improve detection speed; Preferable, metal-oxide-semiconductor to be detected can be power tube.
Such scheme is by adopting the principle that ratio is dwindled more than three grades, and can make detected electric current is tens microampere orders, and detected electric current generally is the ampere level, has reduced the requirement of matching degree, makes precision improve.When power tube is closed in addition, the circuit operate as normal, when switching tube was opened, when circuit did not detect, bias current can all not turn-off, and sample rate current is reduced to minimum, has saved power consumption like this, and has saved the reaction time of circuit.
Set forth such scheme below in conjunction with physical circuit:
Fig. 1 is the particular circuit configurations synoptic diagram of the embodiment of the invention, wherein I
SenseBe last detected current value, I
LFor flowing through the current value of inductance, wherein flow through the electric current I of power switch pipe
6Be substantially equal to I
L, this is because the breadth length ratio of M10 is far longer than M9.M11～M13 forms current mirror provides biasing.Because the effect of OPA (empty short, empty disconnected principle of work) can have equation VA=VB.The voltage of V1 is supply voltage, and its effect is exactly to make M6～M8 be operated in linear district, thereby can obtain conducting resistance R separately
OnWhen the power tube conducting, M6～M10 is operated in linear district.Set breadth length ratio:
(W/L)
M10∶(W/L)
M9＝K
1∶1 (1)
(W/L)
M6∶(W/L)
M7∶(W/L)
M8＝1∶1∶K
2 (2)
Conducting resistance R then
OnRatio be the inverse ratio of breadth length ratio, wherein I
5=I
3+ I
4, I
3＜＜I
4, draw equation by VA=VB again:
(I
1+I
2)·R
on6＝(I
3+I
4)·R
on8+I
3·R
on7 (3)
Derive:
I
1/I
4＝R
on8/R
on6＝1/K
2， (4)
Again by I
6+ I
4=I
L, and I
4＜＜I
6, derive:
I
4/I
L≈I
4/I
6＝1∶K
1， (5)
Obtain by formula (4) and (5)
I
1/I
L≈1/(K
1·K
2)， (6)
Because the cause of current mirror:
(W/L)
M2∶(W/L)
M1＝K
3∶1 (7)
Therefore obtain at last by formula (6) and (7)
I
sense/I
L≈1/(K
1·K
2·K
3) (8)
We have analyzed the feasibility that three grades of ratios of detected electric current are dwindled from principle according to following formula (8).Three grades of detections have been arranged, under the situation that does not influence accuracy of detection, farthest reduced to detect the size of current value, reduced power consumption.
And when the signal of PWM_IN is low level, do not detect electric current.Bias current can all not turn-off, and sample rate current is reduced to minimum, and has saved power consumption like this, and the value of VA and VB can not reduce to zero, helps restarting, and has saved the reaction time of circuit.
Fig. 2 is the detected electric current I of the embodiment of the invention
SenseWith the electric current I that flows through power tube
LOscillogram.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. an on-chip metal oxide semiconductor field effect transistor electric current detecting method is characterized in that, comprises step:
Gather the electric current of metal oxide semiconductor field effect tube to be detected;
Adopt on-chip metal oxide semiconductor field effect transistor detection architecture, the electric current that collects is carried out dwindling more than three grades, obtain to detect electric current.
2. the method for claim 1 is characterized in that, when described metal oxide semiconductor field effect tube to be detected was closed, the metal oxide semiconductor field effect tube detection architecture was opened on the retention tab.
3. the method for claim 1 is characterized in that, described metal oxide semiconductor field effect tube to be detected is a power tube.
4. an on-chip metal oxide semiconductor field effect transistor electric current detecting structure is characterized in that, comprising:
The current acquisition module is used to gather the electric current of metal oxide semiconductor field effect tube to be detected;
On-chip metal oxide semiconductor field effect transistor detection module is used for the electric current of current acquisition module collection is carried out dwindling more than three grades, obtains to detect electric current.
5. structure as claimed in claim 4 is characterized in that, when described metal oxide semiconductor field effect tube to be detected was closed, described on-chip metal oxide semiconductor field effect transistor detection module was held open state.
6. structure as claimed in claim 4 is characterized in that, described metal oxide semiconductor field effect tube to be detected is a power tube.
7. Switching Power Supply, built-in metal oxide semiconductor field effect tube to be detected is characterized in that, comprises on-chip metal oxide semiconductor field effect transistor electric current detecting structure, this detection architecture specifically comprises:
The current acquisition module is used to gather the electric current of metal oxide semiconductor field effect tube to be detected;
On-chip metal oxide semiconductor field effect transistor detection module is used for the electric current of current acquisition module collection is carried out dwindling more than three grades, obtains to detect electric current.
8. Switching Power Supply as claimed in claim 7 is characterized in that, when described metal oxide semiconductor field effect tube to be detected was closed, described on-chip metal oxide semiconductor field effect transistor detection module was held open state.
9. Switching Power Supply as claimed in claim 7 is characterized in that, described metal oxide semiconductor field effect tube to be detected is a power tube.
10. Switching Power Supply as claimed in claim 7 is characterized in that, described Switching Power Supply is a DC-DC converter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010186655A CN101865943A (en) | 2010-05-27 | 2010-05-27 | Method and structure for detecting current of on-chip metal oxide semiconductor field effect transistor (MOSFET) and switching power supply |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010186655A CN101865943A (en) | 2010-05-27 | 2010-05-27 | Method and structure for detecting current of on-chip metal oxide semiconductor field effect transistor (MOSFET) and switching power supply |
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| CN101865943A true CN101865943A (en) | 2010-10-20 |
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103684154A (en) * | 2013-12-17 | 2014-03-26 | 嘉兴中润微电子有限公司 | Phase current detection circuit based on series resistor mode and arranged in driver chip of motor |
| CN109696578A (en) * | 2019-01-22 | 2019-04-30 | 东莞市长工微电子有限公司 | A kind of current detection circuit and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201159746Y (en) * | 2008-02-03 | 2008-12-03 | 深圳艾科创新微电子有限公司 | Current detection circuit |
| CN201159747Y (en) * | 2008-02-03 | 2008-12-03 | 深圳艾科创新微电子有限公司 | Inductor current sensing circuit for switch power source |
| CN101567630A (en) * | 2009-05-27 | 2009-10-28 | 东南大学 | Inductive current induction circuit |
| CN101629973A (en) * | 2009-06-09 | 2010-01-20 | 中国人民解放军国防科学技术大学 | High-precision current sampling circuit without operational amplifier for low voltage power supply |
-
2010
- 2010-05-27 CN CN201010186655A patent/CN101865943A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201159746Y (en) * | 2008-02-03 | 2008-12-03 | 深圳艾科创新微电子有限公司 | Current detection circuit |
| CN201159747Y (en) * | 2008-02-03 | 2008-12-03 | 深圳艾科创新微电子有限公司 | Inductor current sensing circuit for switch power source |
| CN101567630A (en) * | 2009-05-27 | 2009-10-28 | 东南大学 | Inductive current induction circuit |
| CN101629973A (en) * | 2009-06-09 | 2010-01-20 | 中国人民解放军国防科学技术大学 | High-precision current sampling circuit without operational amplifier for low voltage power supply |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103684154A (en) * | 2013-12-17 | 2014-03-26 | 嘉兴中润微电子有限公司 | Phase current detection circuit based on series resistor mode and arranged in driver chip of motor |
| CN103684154B (en) * | 2013-12-17 | 2016-03-02 | 嘉兴中润微电子有限公司 | Series connected resistance phase current sensing circuit in motor drive ic |
| CN109696578A (en) * | 2019-01-22 | 2019-04-30 | 东莞市长工微电子有限公司 | A kind of current detection circuit and method |
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Open date: 20101020 |