CN101863448A - Method for preparing nanometer or micron devices in controllable mode - Google Patents
Method for preparing nanometer or micron devices in controllable mode Download PDFInfo
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- CN101863448A CN101863448A CN 201010195155 CN201010195155A CN101863448A CN 101863448 A CN101863448 A CN 101863448A CN 201010195155 CN201010195155 CN 201010195155 CN 201010195155 A CN201010195155 A CN 201010195155A CN 101863448 A CN101863448 A CN 101863448A
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000011521 glass Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 230000001476 alcoholic effect Effects 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000004321 preservation Methods 0.000 claims 1
- 230000002463 transducing effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- 238000004720 dielectrophoresis Methods 0.000 abstract description 7
- 238000001027 hydrothermal synthesis Methods 0.000 abstract description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 7
- 239000011787 zinc oxide Substances 0.000 abstract 3
- 239000002775 capsule Substances 0.000 abstract 1
- 239000003814 drug Substances 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 description 11
- 230000005611 electricity Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a method for preparing single (a plurality of) zinc oxide (ZnO) nanometer or micron devices in a controllable mode. A ZnO nanometer/micro stick with the diameter of about 100-300nm and the length of 20-30 microns is grown by utilizing a hydrothermal method, and the single ZnO stick is assembled between electrodes in a controllable mode by using a dielectrophoresis method under a microscope. The invention well solves two difficult problems of separating single nanometer material in a ZnO nanometer/micron material device and building the nanometer device in a controllable mode. The nanometer/micron device can be applied to gas sensing, ultraviolet sensing, biology sensing (such as intelligent medicament capsules) and other nanometer/micron devices.
Description
Technical field
The present invention relates to field of nanometer technology, relate in particular to the method that a kind of controlled preparation comprises single or several ZnO nanosensor devices.
Background technology
Nano material, especially monodimension nanometer material, because it has bigger specific surface, and the current channel easily controlled of formation easily, select thereby become the ideal of making highly sensitive nano-sensor.Global scientists has obtained a large amount of encouraging experimental results in this respect, for example utilizes nano wire, nanotube, nanometer band etc. to make high-sensitive biology, gas, chemistry, ultraviolet or the like sensor.In the sensor research, the high sensitivity of sensor is that scientists is at first pursued.With the gas sensor is example, and people attempt the material that has novel pattern by growing, or makes specific functional material form network structure, perhaps utilizes polymer, nano particle that material surface is modified, in the hope of improving sensing sensitivity.The monodimension nanometer material sensor mechanism that we know is that current-carrying quantum count or charge state change in the surperficial conduction band of nano material, thereby cause that its electric conductivity changes, and is reflected as the variation of loop current after utilizing nano material and being detected thing and contacting.
The research of nano material has turned to the application study of nano material from the preparation of novel nano pattern and NEW TYPE OF COMPOSITE nano material.One of application study focus of nano material is a monodimension nanometer material.In the research of 1-dimention nano device, major part need be connected the nano material two ends with electrode.This class preparation of devices will face two difficult problems: how the first comforms is isolated single nano material in many nanometers material; It two is how to give the isolated nano material two ends utmost point that Connects Power.This present class research adopts means such as high-precision photoetching, little processing, microprobe to handle single nano material mostly.As everyone knows, these research meanses need high, complex apparatus, are not that common seminar can realize.
Dielectrophoresis method (Dielectrophoretic) is to utilize to load high-frequency electric field on electrode, thereby near electrode, form very strong non-homogeneous polarization field, produce needed electrophoretic action power by frequency and the intensity of adjusting electric field, so just can manipulation cell, biomolecule and group such as bacterium, DNA, and the orientation of some nano particles moves, collection, counting etc.There is the researcher to utilize the dielectrophoresis method also to realize the device assembling of One-Dimensional ZnO Nano/micron material.
We are for utilizing dielectrophoresis method assembling ZnO nano/micron structure to study.We utilize microscope, and the nanostructured (being about the 20-30 micron) of Hydrothermal Growth successfully is assembled between the homemade electrode (the about 5-15 micron in gap).Not only realize the assembling of single ZnO nano/micron structure, more realized the controlled assembling of nanostructured quantity, promptly can artificially assemble one, two, three, four with controlling .... nano-device.
Summary of the invention
Technical problem: in the device preparation process of existing single ZnO Nano/micron material, two big main difficult problems are arranged: the one, how to isolate single ZnO, the 2nd, how to prepare electrode at single ZnO two ends.The invention provides a kind of preparation method based on single or several ZnO Nano/micron components and parts.
Technical scheme: the present invention is single ZnO nanometer components and parts, it is characterized in that, comprises ZnO nano/micron structure and electrode.Wherein, described ZnO nano/micron structure is a sensing device; Described electrode is a metal electrode, is used to connect external circuit.
Among the present invention, the ZnO nano/micron structure length that the hydro-thermal method of employing is grown surpasses 30 μ m.Under the room temperature, the ZnCl of configuration 0.5mol/L in container
2Solution drips NH gradually
3H
2O to pH=10.1-10.8 puts into the glass substrate that cleans up, and airtight container is placed on 80-120 ℃ thermostatic drying chamber growth 3-5 hour, obtains the ZnO nano/micron structure of length 20-35 μ m;
Among the present invention, electrode used therein is for to prepare layer of metal film with magnetron sputtering method or hot evaporation coating method on substrate of glass, depicts with extremely sharp cutter then that slit for 5-15 μ m forms.
Among the present invention, single ZnO nano/micron structure what build usefulness is the dielectrophoresis method, concrete steps are as follows:
A. growth there is the substrate of glass of ZnO nano/micron structure to place a small amount of alcoholic solution ultrasonic 15 minutes, allows the ZnO nano/micron structure break up fully in alcoholic solution;
B. take out substrate of glass, add alcohol again, be mixed with the moderate alcoholic solution of ZnO concentration, ultrasonic more afterwards 15 minutes, allow the ZnO nano/micron structure be evenly dispersed in the alcoholic solution;
C. will delineate good electrode and place the solution for preparing, and add the high-frequency electric field of 4-6V, 5-6MHZ for the electrode two ends, react 1-10 minute;
D. electrode is taken out, use the washed with de-ionized water multipass repeatedly after, oven dry in baking oven, preserve.
Beneficial effect: this method has not only realized the assembling of single ZnO nano/micron structure, has more realized the controlled assembling of nanostructured quantity, promptly can artificially assemble one, two, three, four with controlling .... nano-device.
The specific embodiment
Among the present invention, it is as follows that controlled self assembly has only the device method of a ZnO nano/micron structure.In field of microscope, when overlapping a ZnO nano/micron structure between two electrodes, cut off the electricity supply.When two nano/micron structures of needs overlap joints, only need cut off the electricity supply when seeing between electrode two nano/micron structures of overlap joint gets final product.The rest may be inferred to prepare the device method that comprises three, four nanostructureds.
Among the present invention, the shape of electrode can freely design, and comprises single seam electrode, comb electrode, zigzag electrode.On the good metal film of plating, the good shape of first programming is delineated with cutter afterwards again.
Embodiment one:
1. in container, dispose the ZnCl of 0.5mol/L
2Solution drips NH gradually
3H
2O to pH=10.3 puts into the glass negative that cleans up, and airtight container is placed on 90 ℃ thermostatic drying chamber growth 4 hours, obtains the ZnO Nano/micron rod that length surpasses 30 μ m.
On substrate of glass with magnetron sputtering method layer of metal aluminium film, depicting with extremely sharp cutter then is that the slit of 8 μ m forms electrode.
3. single ZnO nano/micron structure what build usefulness is the dielectrophoresis method, concrete steps are as follows:
A. growth there is the substrate of glass of ZnO Nano/micron rod to place a small amount of alcoholic solution ultrasonic 15 minutes, allows ZnO Nano/micron rod break up fully in alcoholic solution;
B. take out substrate of glass, add alcohol again, be mixed with the moderate solution of ZnO concentration, ultrasonic more afterwards 15 minutes, allow ZnO Nano/micron rod be evenly dispersed in the alcoholic solution;
C. the drips of solution that will prepare in right amount is added on the good electrode of delineation, adds the high-frequency electric field of 5V, 6MHZ for the electrode two ends.In field of microscope, when ZnO Nano/micron rod of overlap joint between two electrodes, cut off the electricity supply.
D. electrode is taken out, use the washed with de-ionized water multipass repeatedly after, oven dry in baking oven, preserve.
Embodiment two:
1. in container, dispose the ZnCl of 0.5mol/L
2Solution drips NH gradually
3H
2O to pH=10.5 puts into the glass negative that cleans up, and airtight container is placed on 80 ℃ thermostatic drying chamber growth 3 hours, obtains the clean ZnO Nano/micron rod that length surpasses 25 μ m.
On substrate of glass with magnetron sputtering method layer of metal aluminium film, depicting with extremely sharp cutter then is that the slit of 10 μ m forms electrode.
3. single ZnO nano/micron structure what build usefulness is the dielectrophoresis method, concrete steps are as follows:
A. growth there is the substrate of glass of ZnO Nano/micron rod to place a small amount of alcoholic solution ultrasonic 15 minutes, allows ZnO Nano/micron rod break up fully in alcoholic solution;
B. take out substrate of glass, add alcohol again, be mixed with the moderate solution of ZnO concentration, ultrasonic more afterwards 15 minutes, allow the ZnO nano/micron structure be evenly dispersed in the alcoholic solution;
C. the drips of solution that will prepare in right amount is added on the good electrode of delineation, adds the high-frequency electric field of 4V, 5MHZ for the electrode two ends.In field of microscope, when overlapping three ZnO nano/micron structures between two electrodes, cut off the electricity supply.
D. electrode is taken out, use the washed with de-ionized water multipass repeatedly after, oven dry in baking oven, preserve.
Claims (2)
1. a controlled method for preparing nanometer or micron devices is characterized in that, the device of this method preparation comprises single or several ZnO nanometers or micrometer structure, and concrete steps are as follows;
A. build device used ZnO nanometer or micrometer structure: under the room temperature, the ZnCl of configuration 0.5mol/L in container
2Solution drips NH gradually
3H
2O to pH=10.1-10.8 puts into the glass substrate that cleans up, and airtight container is placed on 80-120 ℃ thermostatic drying chamber growth 3-5 hour, obtains the ZnO nano/micron structure of length 20-35 μ m;
B. electrode: prepare layer of metal film with magnetron sputtering method or hot evaporation coating method on glass substrate, the slit that depicts to 5-15 μ m with sharp cutter forms then;
C. building of single ZnO nanometer or micron devices:
1) growth there is the substrate of ZnO nanometer or micrometer structure placed the ultrasonic 10-20 of alcoholic solution minute, takes out substrate, add alcohol again, be mixed with the moderate solution of ZnO concentration, ultrasonic more afterwards 10-20 minute;
2) will delineate good electrode and be placed on the microscopically that enlargement ratio is a 100-200 times of transmission mode, the drips of solution for preparing will be added on the electrode, and add the high-frequency electric field of 4-6V, 5-6MHZ for the electrode two ends, react 1-10 minute; Electrode is taken out, after washed with de-ionized water, oven dry in baking oven, preservation.
2. according to the described method of claim 1, it is characterized in that this method preparation is used for the nanometer or the micron devices of gas sensing, bio-sensing, ultraviolet transducing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010101951557A CN101863448B (en) | 2010-06-08 | 2010-06-08 | Method for preparing nanometer or micron devices in controllable mode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101951557A CN101863448B (en) | 2010-06-08 | 2010-06-08 | Method for preparing nanometer or micron devices in controllable mode |
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| Publication Number | Publication Date |
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| CN101863448A true CN101863448A (en) | 2010-10-20 |
| CN101863448B CN101863448B (en) | 2011-10-05 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102303841A (en) * | 2011-07-11 | 2012-01-04 | 西安交通大学 | Method for forming micro-nano composite structure by micro-spraying-printing and dielectrophoretic force |
| CN102698678A (en) * | 2012-06-18 | 2012-10-03 | 南京航空航天大学 | Nanometer material spot forming device |
| CN105372897A (en) * | 2015-11-27 | 2016-03-02 | 南京邮电大学 | Electrochromic device based on ZnO nanotubes and preparation method thereof |
| CN105668512A (en) * | 2016-01-11 | 2016-06-15 | 江苏师范大学 | Nano-electronic device mounting method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752013A (en) * | 2005-11-02 | 2006-03-29 | 东南大学 | Method of growing nano-rod shaped zinc oxide by hydrothermal decomposition |
| CN1840466A (en) * | 2005-03-31 | 2006-10-04 | 清华大学 | Unidimensional nano material device and method for manufacturing same |
-
2010
- 2010-06-08 CN CN2010101951557A patent/CN101863448B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1840466A (en) * | 2005-03-31 | 2006-10-04 | 清华大学 | Unidimensional nano material device and method for manufacturing same |
| CN1752013A (en) * | 2005-11-02 | 2006-03-29 | 东南大学 | Method of growing nano-rod shaped zinc oxide by hydrothermal decomposition |
Non-Patent Citations (1)
| Title |
|---|
| 《真空电子技术》 20071231 孙宏博等 表面传导电子发射显示器电子发射源制作技术 第41-45页 1,2 , 第6期 2 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102303841A (en) * | 2011-07-11 | 2012-01-04 | 西安交通大学 | Method for forming micro-nano composite structure by micro-spraying-printing and dielectrophoretic force |
| CN102698678A (en) * | 2012-06-18 | 2012-10-03 | 南京航空航天大学 | Nanometer material spot forming device |
| CN102698678B (en) * | 2012-06-18 | 2014-05-07 | 南京航空航天大学 | Nanometer material spot forming device |
| CN105372897A (en) * | 2015-11-27 | 2016-03-02 | 南京邮电大学 | Electrochromic device based on ZnO nanotubes and preparation method thereof |
| CN105372897B (en) * | 2015-11-27 | 2018-07-13 | 南京邮电大学 | Electrochromic device and preparation method thereof based on ZnO nanotube/ |
| CN105668512A (en) * | 2016-01-11 | 2016-06-15 | 江苏师范大学 | Nano-electronic device mounting method |
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| CN101863448B (en) | 2011-10-05 |
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Application publication date: 20101020 Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000209 Denomination of invention: Method for preparing nanometer or micron devices in controllable mode Granted publication date: 20111005 License type: Common License Record date: 20161111 |
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Effective date of registration: 20180111 Address after: 210003 Gulou District, Jiangsu, Nanjing new model road, No. 66 Patentee after: Nanjing University of Posts and Telecommunications Asset Management Co., Ltd. Address before: 210003 Nanjing City, Jiangsu Province, the new model road No. 66 Patentee before: Nanjing Post & Telecommunication Univ. |
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Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000209 Date of cancellation: 20180116 |
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Effective date of registration: 20180508 Address after: 215626 room 801, 8 / F, Hexing Sha Chau building, Jin Fengzhen, Zhangjiagang, Suzhou, Jiangsu. Patentee after: Jiangsu Nan mail Intelligent City Research Institute Co., Ltd. Address before: 210003 new model road 66, Gulou District, Nanjing, Jiangsu Patentee before: Nanjing University of Posts and Telecommunications Asset Management Co., Ltd. |
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